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EEC-653 CAD OF ELECTRONICS LAB PSPICE Experimen ts 1. (a) Transient Analysis of BJT inverter using step input. (b)DC Analysis (VTC) of BJT inverter with and without parameters. 2. (a) Transient Analysis of NMOS inverter using step input. (b) Transient Analysis of NMOS inverter using pulse input. (c) DC Analysis (VTC) of NMOS inverter with and without parameters. 3. (a) Analysis of CMOS inverter using step input. (b) Transient Analysis of CMOS inverter using step input with parameters. (c) Transient Analysis of CMOS inverter using pulse input. (d) Transient Analysis of CMOS inverter using pulse input with parameters. (e) DC Analysis (VTC) of CMOS inverter with and without parameters. 4. Transient & DC Analysis of NOR Gate inverter. 5. Transient & DC Analysis of NAND Gate. VHDL Experiments 1. Synthesis and simulation of Full Adder. 2. Synthesis and Simulation of Full Subtractor. 3. Synthesis and Simulation of 3 X 8 Decoder. 4. Synthesis and Simulation of 8 X 1 Multiplexer. 5. Synthesis and Simulation of 9 bit odd pa rity generator. 6. Synthesis and Simulation of Flip Flop (D, and T).  
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EEC-653

CAD OF ELECTRONICS LAB

PSPICE Experiments

1. (a) Transient Analysis of BJT inverter using step input.

(b)DC Analysis (VTC) of BJT inverter with and without parameters.

2. (a) Transient Analysis of NMOS inverter using step input.

(b) Transient Analysis of NMOS inverter using pulse input.

(c) DC Analysis (VTC) of NMOS inverter with and without parameters.

3. (a) Analysis of CMOS inverter using step input.

(b) Transient Analysis of CMOS inverter using step input with parameters.

(c) Transient Analysis of CMOS inverter using pulse input.

(d) Transient Analysis of CMOS inverter using pulse input with parameters.

(e) DC Analysis (VTC) of CMOS inverter with and without parameters.

4. Transient & DC Analysis of NOR Gate inverter.

5. Transient & DC Analysis of NAND Gate.

VHDL Experiments

1. Synthesis and simulation of Full Adder.

2. Synthesis and Simulation of Full Subtractor.

3. Synthesis and Simulation of 3 X 8 Decoder.

4. Synthesis and Simulation of 8 X 1 Multiplexer.

5. Synthesis and Simulation of 9 bit odd parity generator.

6. Synthesis and Simulation of Flip Flop (D, and T).

 

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INTRODUCTION TO ORCAD

Objectives:

• To Be familiar with the Orcad simulation.

• To be familiar with types of analysis in Orcad program.

• To make analysis to some examples on each analysis.

Equipments:

Computer – Orcad software program.

Introduction to Orcad:

SPICE is a powerful general purpose analog and mixed-mode circuit simulator that is

used to verify circuit designs and to predict the circuit behavior. This is of particular

importance for integrated circuits.

Simulation Program for Integrated Circuits Emphasis.

SPICE can do several types of circuit analyses. Here are the most important ones:

1 • Non-linear DC analysis: calculates the DC transfer curve.

2 • Non-linear transient and Fourier analysis: calculates the voltage and current as a function

of time when a large signal is applied; Fourier analysis gives the frequency spectrum.

3 • Linear AC Analysis: calculates the output as a function of frequency. A bode plot is

generated.

4 • Noise analysis5 • Parametric analysis

6 • Monte Carlo Analysis

In addition, PSpice has analog and digital libraries of standard components (such as NAND, NOR,

flip-flops, MUXes, FPGA, PLDs and many more digital components ). This makes it a useful toolfor a wide range of analog and digital applications.

All analyses can be done at different temperatures. The default temperature is 300K.

The circuit can contain the following components:

1 • Independent and dependent voltage and current sources2 • Resistors

3 • Capacitors

4 • Inductors

5 • Mutual inductors

6 • Transmission lines

7 • Operational amplifiers

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8 • Switches

9 • Diodes

10 • Bipolar transistors

11 • MOS transistors

12 • JFET

13 • MOSFET

14 • Digital gates

Algorithm of simulating a circuit

The following figure summarizes the different steps involved in simulating a circuit with Capture

and PSpice. We'll describe each of these briefly through a couple of examples.

Figure 1: Steps involved in simulating a circuit with PSpice.

The values of elements can be specified using scaling factors (upper or lower case):

T or Tera (= 1E12);G or Giga (= E9);

MEG or Mega (= E6);

K or Kilo (= E3);M or Milli (= E-3);

Types of analysis in Orcad:

1) BIAS Point or DC analysis

1 1. Draw the circuit shown in figure 2 on the capture window

2 2.With the schematic open, go to the PSPICE menu and choose NEW SIMULATIONPROFILE.

3 3. In the Name text box, type a descriptive name, e.g. Bias.

4 4. From the Inherit From List: select none and click Create.

U or Micro (= E-6);

 N or Nano (= E-9);

P or Pico (= E-12)F of Femto (= E-15)

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5 5. When the Simulation Setting window opens, for the Analyis Type, choose Bias Point and

click OK.

6 6. Now you are ready to run the simulation: PSPICE/RUN7 7. A window will open, letting you know if the simulation was successful. If there are

errors, consult the Simulation Output file.

8 8. To see the result of the DC bias point simulation, you can open the Simulation Output fileand it will be as shown below.

9

2) Transient Analysis

1 1. Draw the circuit as shown in figure2 2. Insert the Vsin source from the library Source. Double click on the source and make the

following changes FREQ = 1000, AMPL = 1, VOFF = 0.3 3. Set up the Transient Analysis: go to the PSPICE/NEW SIMULATION PROFILE.

4 4. Give it a name (e.g. Transient). When the Simulation Settings window opens, select "Time

Domain (Transient)" Analysis. Enter also the Run Time. Lets make it 5 ms(5 periods sinceFREQ = 1000). For the Max Step size, you can leave it blank or enter 10us.

5 5. Run PSpice.

6 6.The results is shown in figure

3) AC Sweep Analysis:

The AC analysis will apply a sinusoidal voltage whose frequency is swept over a specified range. The

simulation calculates the corresponding voltage and current amplitude and phases for each frequency.When the input amplitude is set to 1V, then the output voltage is basically the transfer function. In

contrast to a sinusoidal transient analysis, the AC analysis is not a time domain simulation but rather a

simulation of the sinusoidal steady state of the circuit. When the circuit contains non-linear elementsuch as diodes and transistors, the elements will be replaced their small-signal models with the

 parameter values calculated according to the corresponding biasing point.

Results of the Bias simulation displayed on the schematic.

Time

0s 0.5ms 1.0ms 1.5ms 2.0ms 2.5ms 3.0ms 3.5ms 4.0ms 4.5ms 5.0msV(D1:2) V(V4:+)

-1.0V

-0.5V

0V

0.5V

1.0V

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1 1. Create a new project and build the circuit as shown in figure

2 2. For the voltage source use VAC from the Sources library.3 3. Make the amplitude of the input source 1V.

4 4. Create a Simulation Profile. In the Simulation Settings window, select AC Sweep/Noise.

5 5. Enter the start and end frequencies and the number of points per decade. For our example weuse 0.1Hz, 10 kHz and 11, respectively.

6 6. Run the simulation7 7. In the Probe window, add the traces for the output voltage.8 8. The results is as shown in figure

4) DC Sweep Analysis:

The DC sweep is used to draw the voltage transfer characteristic

(VTC) between output and input.

1) we connect the circuit as shown in figure2) from dc sweep analysis we choose primary sweep and we

put the name of the source V1 and start value (0),end value(12) and increment (0.1).

3) Then choose secondary sweep and put the name of the current source I2 and startvalue (-4u),end value (12u) and increment (4u).

4) we put the current marker above R2 as shown.5) The result will be as shown in the figure 8.

Output Current

Frequency

100mHz 300mHz 1.0Hz 3.0Hz 10Hz 30Hz 100Hz 300Hz 1.0KHz 3.0KHz 10KHzV(R4:2)

0V

200mV

400mV

600mV

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V_V1

0V 1V 2V 3V 4V 5V 6V 7V 8V 9V 10V 11V 12V-I(R2)

-1.0mA

0A

1.0mA

2.0mA

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EXPERIMENT :- 1 (a)

AIM: Transient Analysis of BJT inverter using step input

 CIRCUIT DIAGRAM:

Transient Analysis Procedure:

1. Draw the circuit as shown in figure

2. Insert the Vdc source from the library.

3. Double click on the components and place the value.4. Set up the Transient Analysis: go to the PSPICE/NEW SIMULATION PROFILE.

5. Give it a name (e.g. Transient). When the Simulation Settings window opens, select "Time

Domain (Transient)" Analysis.6. Enter the Run Time. Lets make it 10000us. For the Max Step size, you can leave it blank or enter 

10us.

7. Run PSpice. 8.RESULT:

EXPERIMENT :-1(B)

0

Q 1

Q 2 N 2 2 2 2

R 1

1 k

R 2

1 k

V 3

5 V d c

V 4

5 V d c

V

V

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AIM: (b)DC Analysis (VTC) of BJT inverter with parameters.

CIRCUIT DIAGRAM:

 

DC Sweep Analysis Procedure:

The DC sweep is used to draw the voltage transfer characteristic (VTC) between output and input.

1. we connect the circuit as shown in figure2. Set up the DC Sweep: go to the PSPICE/NEW SIMULATION PROFILE3. From dc sweep analysis we choose primary sweep and we put the name of the

source V4 and start value (0),end value (5V) and increment (0.1).4. Place the Voltage marker above R1 and R2 as shown.5. The result will be as shown below.

RESULT

0

Q 1

Q 2 N 2 2 2 2

R 1

1 k

R 2

1 k

V 3

5 V d c

V 4

5 V d c

V

V

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EXPERIMENT:- 2 (A)

AIM:- Transient Analysis of NMOS inverter using step input.CIRCUIT DIAGRAM:-

Transient Analysis Procedure:1. Draw the circuit as shown in figure2. Insert the Vdc source from the library.

3. Double click on the components and place the

value.

4. Set up the Transient Analysis: go to thePSPICE/NEW SIMULATION PROFILE.

5. Place the Voltage marker 

6. Give it a name. When the Simulation Settingswindow opens, select "Time Domain (Transient)"

Analysis.

7.Enter the Run Time. Lets make it 10000us. For theMax Step size, you can leave it blank or enter 

10us. and Run PSpice. 

Result

M 1

B S S 1 2 9

M 2

L 2 0 8 2

V 2

5 V d c

0

V 1

5 V d c

V

V

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EXPERIMENT:-2(B)

AIM:- Transient Analysis of NMOS inverter using pulse input.

CIRCUIT DIAGRAM:-

Transient Analysis Procedure:

1. Draw the circuit as shown in figure

2. Insert the digital clock and VDC

from the library and give the value.3. Set up the Transient Analysis: go to

the PSPICE/NEW SIMULATION

PROFILE.

4. Give it a name. When the SimulationSettings window opens, select "Time

Domain (Transient)"

Analysis.5. Enter the Run Time. Lets make it 10000us. For the Max Step size, you can leave it blank or 

enter 

10us. Place the Voltage marker.6. Run PSpice.

Result

M 2

L 2 0 8 2

V 2

5 V d c

0

CLK

D S T M 1O F F T I M E = . 5 u S

O N T I M E = . 5 u S

D E L A Y =

S T A R T V A L = 0

O P P V A L = 1

M 3

B S S 1 2 9

V

V

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EXPERIMENT:-2(C)

 AIM:-DC Analysis (VTC) of NMOS inverter with PARAMETERS

CIRCUIT DIAGRAM:-

DC Sweep Analysis Procedure:

The DC sweep is used to draw the voltage transfer 

characteristic (VTC) between output and input.

1. Connect the circuit as shown in figure2. Set up the DC Sweep: go to the

PSPICE/NEW SIMULATION PROFILE3. From dc sweep analysis we choose primary

sweep and we put the name of the source

V3 and start value (0),end value (5V) andincrement (0.1).

4. Place the Voltage marker above R1 and R2as shown.

5. Run the circuit6. The result will be as shown below.

Result

M 2

L 2 0 8 2

5 V d c

0

M 3

B S S 1 2 9

V 3

5 V d cV

V

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EXPERIMENT:-3(A)

AIM:- Analysis of CMOS inverter using step input.

CIRCUIT DIAGRAM:-

Transient Analysis Procedure:

1. Draw the circuit as shown in figure

2. Insert the VDC from the library and give thevalue.

3. Set up the Transient Analysis: go to the

PSPICE/NEW SIMULATION PROFILE.

4. Give it a name. When the Simulation Settingswindow opens, select "Time Domain

(Transient)"

Analysis.5. Enter the Run Time. Lets make it 10000us.

For the Max Step size, you can leave it blank or 

enter 10us. Place the Voltage marker. Run PSpice.

Result

M 1

M 2 S J 5 9 8 / N E C

M 2

M 2 S K 3 2 9 5 / N E C

V 1

5 V d c

V 2

5 V d c

0

0

0

V V

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EXPERIMENT:-3(B)

AIM:- Transient Analysis of CMOS inverter using step input with parameters.

CIRCUIT DIAGRAM:-

Result

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EXPERIMENT:-3(C)

AIM:- Transient Analysis of CMOS inverter using pulse input.

CIRCUIT DIAGRAM:-

Transient Analysis Procedure:

1. Draw the circuit as shown in figure2. Insert the Vpulse input and VDC supply from the

library and put the given value.

3. Set up the Transient Analysis: go to the PSPICE/NEW

SIMULATION PROFILE.4. Give it a name. When the Simulation Settings window

opens, select "Time Domain (Transient)"

Analysis.5. Enter the Run Time. Lets make it 10000us. For the Max

Step size, you can leave it blank or enter 

10us. Place the Voltage marker.6. Run PSpice.

Result

EXPERIMENT:-3(D)

M 1

M 2 S J 5 9 8 / N E C

M 2

M 2 S K 3 2 9 5 / N E C

V 1

5 V d c

0

00

V 2

T D =

T F = 1 n s

P W = 1 m s

P E R = 2 m s

V 1 = 0

T R = 1 n s

V 2 = 5

V

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AIM:- Transient Analysis of CMOS inverter using pulse input with parameters. 

CIRCUIT DIAGRAM:-

Transient Analysis with parameter Procedure:

1. Draw the circuit as shown in figure

2. Insert the Vpulse input and VDC supply from the

library and put the given value.

3. Set up the Transient Analysis: go to the PSPICE/NEWSIMULATION PROFILE.

4. Give it a name. When the Simulation Settings window

opens, select "Time Domain (Transient)"Analysis.

5. Enter the Run Time. Lets make it 10000us. For the Max

Step size, you can leave it blank or enter 10us. Place the Voltage marker on output.

6. Run PSpice.

Result

M 1

M 2 S J 5 9 8 / N E C

M 2

M 2 S K 3 2 9 5 / N E C

V 1

5 V d c

0

00

V 2

T D =

T F = 0

P W = 1 0 n s

P E R = 3 0 n s

V 1 = 0

T R = 0

V 2 = 5

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EXPERIMENT:-3(E)

AIM:-DC Analysis (VTC) of CMOS inverter with and without parameters.

CIRCUIT DIAGRAM:-

DC Sweep Analysis Procedure:

The DC sweep is used to draw the voltage transfer 

characteristic (VTC) between output and input.

1. Connect the circuit as shown in figure

2. Set up the DC Sweep: go to the PSPICE/NEWSIMULATION PROFILE

3. From dc sweep analysis we choose primary sweep

and we put the name of the source V2 and start value

(0),end value (5V) and increment (0.1).

4. Place the Voltage marker as shown in the figure .5. Run the circuit6. The result will be as shown below.

RESULT

M 1

M 2 S J 5 9 8 / N E C

M 2

M 2 S K 3 2 9 5 / N E C

V 1

5 V d c

0

00

V 2

5 V d c

VV

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EXPERIMENT:-4

AIM:-Transient & DC Analysis of NOR Gate inverter.

CIRCUIT DIAGRAM:-

DC Sweep Analysis Procedure:

 The DC sweep is used to draw thevoltage transfer characteristic(VTC) between output and input.

1. Connect the circuit as shown infigure

2. Set up the DC Sweep: go tothe PSPICE/NEW SIMULATIONPROFILE

3. From dc sweep analysis wechoose primary sweep and weput the name of the source V2and start value (0),end value(5V) and increment (0.1).

4. Place the Voltage marker asshown in the figure .

5. Run the circuit6. The result will be as shownbelow.

Result(A)DC Analysis of NOR gate Inverter.

M 4

M T D 2 9 5 5 V / O N

M 5

M T D 2 9 5 5 V / O N

M 6

M T D 2 N 5 0 / O N

M 7

M T D 2 N 5 0 / O N

5 V d c

0

V 2

T D =

T F =

P W = 2 0 n s

P E R = 4 0 n s

V 1 = 0

T R =

V 2 = 5

0

V

V

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(B) Transient Analysis of NOR Gate inverter.

Transient Analysis with parameter Procedure:

1. Draw the circuit as shown in figure

2. Insert the Vpulse input and VDC supplyfrom the library and put the given value.

3. Set up the Transient Analysis: go to the

PSPICE/NEW SIMULATION PROFILE.4. Give it a name. When the Simulation

Settings window opens, select "Time

Domain (Transient)"

Analysis.5. Enter the Run Time. Lets make it 20ms.

For the Max Step size, you can leave it

 blank or enter 

10us. Place the Voltage marker onoutput.

6. Run PSpice.

Result 

(A)Transient Analysis of NOR Gate inverter.

M 4

M T D 2 9 5 5 V / O N

M 5

M T D 2 9 5 5 V / O N

M 6

M T D 2 N 5 0 / O N

M 7

M T D 2 N 5 0 / O N

5 V d c

0

V 2

T D =

T F = 1 n s

P W = 1 m s

P E R = 2 m s

V 1 = 0

T R = 1 n s

V 2 = 5

0

V

V

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EXERIMENT:-5

AIM:- (a) Transient & DC Analysis of NAND Gate.

CIRCUIT DIAGRAM:-

RESULT

DC Analysis of NAND Gate.

M 5

B S S 1 2 9

M 6

M 2 N 6 7 5 9

M 7

M 2 N 6 7 5 9

V 5

5 V d c

0

0

V 6

5 V d c

V

V

CLK

D S T M 1O F F T I M E = . 5 u S

O N T I M E = . 5 u S

D E L A Y =

S T A R T V A L = 0

O P P V A L = 1

CLK

D S T M 2O F F T I M E = . 5 u S

O N T I M E = . 5 u S

D E L A Y =

S T A R T V A L = 0

O P P V A L = 1

V

V

V

M 5

B S S 1 2 9

M 6

M 2 N 6 7 5 9

M 7

M 2 N 6 7 5 9

0

5

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(b )Transient Analysis of NAND Gate.

CIRCUIT DIAGRAM:-

RESULT

Transient Analysis of NAND Gate.


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