+ All Categories
Home > Documents > Cationic Silica Particles in Acidic CMP Slurries for ... · OPTIPLANE™ 2118 CMP Slurry Advantage...

Cationic Silica Particles in Acidic CMP Slurries for ... · OPTIPLANE™ 2118 CMP Slurry Advantage...

Date post: 18-Jul-2020
Category:
Upload: others
View: 7 times
Download: 2 times
Share this document with a friend
15
Dow.com Cationic Silica Particles in Acidic CMP Slurries for Performance Enhancement Julia Kozhukh , Yi Guo Dow Electronic Materials April 13, 2017
Transcript
Page 1: Cationic Silica Particles in Acidic CMP Slurries for ... · OPTIPLANE™ 2118 CMP Slurry Advantage –Low Scratch Defects DOW RESTRICTED 9 IC1000TM Pad VISIONPADTM 6000 Pad A 70%

Dow.com

Cationic Silica Particles in Acidic CMP Slurries for Performance Enhancement

Julia Kozhukh, Yi GuoDow Electronic MaterialsApril 13, 2017

Page 2: Cationic Silica Particles in Acidic CMP Slurries for ... · OPTIPLANE™ 2118 CMP Slurry Advantage –Low Scratch Defects DOW RESTRICTED 9 IC1000TM Pad VISIONPADTM 6000 Pad A 70%

Overview

Charge-centered FEOL slurry design

Additive and pH effects on removal rate

Silica ILD slurry development

Slurry design and development for high selectivity applications

DOW RESTRICTED 2

Page 3: Cationic Silica Particles in Acidic CMP Slurries for ... · OPTIPLANE™ 2118 CMP Slurry Advantage –Low Scratch Defects DOW RESTRICTED 9 IC1000TM Pad VISIONPADTM 6000 Pad A 70%

SiSi Oxide

Repulsive interaction

SiNSiN Oxide

A Charge-Centered Approach to FEOL CMP

DOW RESTRICTED 3

SiSi Oxide

Attractive interaction

SiNSiN Oxide

Innovative cationic silica particles enabled advanced FEOL slurry design.

ILD Applications High Selectivity Applications

Page 4: Cationic Silica Particles in Acidic CMP Slurries for ... · OPTIPLANE™ 2118 CMP Slurry Advantage –Low Scratch Defects DOW RESTRICTED 9 IC1000TM Pad VISIONPADTM 6000 Pad A 70%

Cationic Silica Slurry Design

DOW RESTRICTED 4

Traditional Colloidal Silica

SiSi

SiO2

Oxide

Optimized Additive Package

SiSi

SiO2

Oxide

Excess Additive

SiSi

SiO2

Oxide

In an acidic regime, charge on silica particles is made positive using charge-modifying

additives.

The resulting attractive forces between abrasive and dielectric film lead to higher

removal rates at lower abrasive loading.

Excessive additive in the bulk liquid may adsorb onto wafer surfaces, leading to

weakened particle/wafer attraction and, consequently, diminished removal rate.

Page 5: Cationic Silica Particles in Acidic CMP Slurries for ... · OPTIPLANE™ 2118 CMP Slurry Advantage –Low Scratch Defects DOW RESTRICTED 9 IC1000TM Pad VISIONPADTM 6000 Pad A 70%

Additive Concentration and pH Affect Adsorption

DOW RESTRICTED 5

SiO2 SiO2SiO2 SiO2 SiO2 SiO2

Fixed pH

A B C

[Additive]: A < B < C

Additive saturates surface and then

increases its bulk liquid concentration.

-15.0

-10.0

-5.0

0.0

5.0

10.0

15.0

20.0

25.0

0

500

1000

1500

2000

2500

3000

0.00 0.02 0.04 0.06 0.08

Zeta

Po

ten

tial

Oxi

de

RR

Additive A, wt%

[Additive A] vs.TEOS RR, SiN RR, and ZP

TEOS RR

SiN RR

Zeta Potential

B C

, mV

A

Oxi

de

RR

, Å/m

in

Page 6: Cationic Silica Particles in Acidic CMP Slurries for ... · OPTIPLANE™ 2118 CMP Slurry Advantage –Low Scratch Defects DOW RESTRICTED 9 IC1000TM Pad VISIONPADTM 6000 Pad A 70%

Additive Concentration and pH Affect Adsorption

DOW RESTRICTED 6

SiO2 SiO2SiO2 SiO2

Fixed [Additive]

C D E

0.0

5.0

10.0

15.0

20.0

25.0

0

500

1000

1500

2000

2500

3000

2 3 4 5 6 7 8

Zeta

Po

ten

tial

Oxi

de

RR

pH

pH vs. TEOS RR, SiN RR, and ZP

TEOS RR

SiN RR

Zeta Potential

CD

E

SiO2 SiO2

, mV

Oxi

de

RR

, Å/m

in pH: C < D < E

pH influences silanol ionization.

Ionized silanol groups neutralize

additive cations on the surface.

Page 7: Cationic Silica Particles in Acidic CMP Slurries for ... · OPTIPLANE™ 2118 CMP Slurry Advantage –Low Scratch Defects DOW RESTRICTED 9 IC1000TM Pad VISIONPADTM 6000 Pad A 70%

Dow ILD Slurry Portfolio

DOW RESTRICTED 7

Traditional Klebosol®

30% solids at POU

80 nm spherical particle

Klebosol® 1630

16% solids at POU

135 nm elongated particle

Improved post-HF

defectivity

Low CoO

OPTIPLANE TM 2118

4-6% solids at POU

pH 3

Spherical colloidal silica +

additive

Step improvement in post-HF

defectivity

Low CoO

Klebosol® 1730

16% solids at POU

pH 10.8

135 nm elongated

particle + additive

Higher RR

Improved post-HF

defectivity

Low CoO

Non-Formulated Klebosol® Colloidal Silica Slurry

Dow Formulated ILD Slurry

Next Generation ILD

Slurry

A lower abrasive slurry

with higher rate and lower

defectivity is in

development.

Page 8: Cationic Silica Particles in Acidic CMP Slurries for ... · OPTIPLANE™ 2118 CMP Slurry Advantage –Low Scratch Defects DOW RESTRICTED 9 IC1000TM Pad VISIONPADTM 6000 Pad A 70%

OPTIPLANE™ 2118 Slurry – Planarization Efficiency and Pad Synergy

DOW RESTRICTED 8

OPTIPLANETM 2118 demonstrated improved performance with Dow’s

VISIONPAD™ 6000 pad over IC1000. Synergistic effects between pad

and slurry allow performance tuning.

Page 9: Cationic Silica Particles in Acidic CMP Slurries for ... · OPTIPLANE™ 2118 CMP Slurry Advantage –Low Scratch Defects DOW RESTRICTED 9 IC1000TM Pad VISIONPADTM 6000 Pad A 70%

OPTIPLANE™ 2118 CMP Slurry Advantage – Low Scratch Defects

DOW RESTRICTED 9

IC1000TM Pad

VISIONPADTM 6000 Pad

A 70% or more reduction in defects was

observed for acidic OPTIPLANE™ 2118 slurry

compared to alkaline fumed silica slurry.

Critical stress intensity for crack propagation in silicates driven

by –OH catalyzed Si-O bond cleavage.[1]

Strength required for initiating crack generally increases with

decreasing pH.

Acidic pH may contribute to reduced defect counts.

[1] Proc. of SPIE, vol.4940, 83, 2003.

Page 10: Cationic Silica Particles in Acidic CMP Slurries for ... · OPTIPLANE™ 2118 CMP Slurry Advantage –Low Scratch Defects DOW RESTRICTED 9 IC1000TM Pad VISIONPADTM 6000 Pad A 70%

Cationic Silica Slurries for High Selectivity Applications

DOW RESTRICTED 10

SiNSiN Oxide SiNSiN Oxide

OPTIPLANE™ 1600 Slurry

SiNSiN Oxide SiNSiN Oxide

OPTIPLANE™ 1601 Slurry

An optimized component of OPTIPLANE™ 1600 slurry protects SiN surfaces through

lubrication layer formation and cationic silica abrasive efficiently removes oxide.

A proprietary additive in OPTIPLANE™ 1601 slurry achieves dishing control and cationic

silica removes oxide with selectivity to SiN through a charge repulsion mechanism.

Zeta potential of

OPTIPLANE™1601

slurry is +26 mV at

POU pH.

Zeta potential of

OPTIPLANE™1600

slurry is +16 mV at

POU pH.

Page 11: Cationic Silica Particles in Acidic CMP Slurries for ... · OPTIPLANE™ 2118 CMP Slurry Advantage –Low Scratch Defects DOW RESTRICTED 9 IC1000TM Pad VISIONPADTM 6000 Pad A 70%

OPTIPLANE™ 16XX Slurry Series for High Selectivity Applications

DOW RESTRICTED 11

OPTIPLANE™ 1600

OPTIPLANE™ 1601

The OPTIPLANE™ 16XX slurry series targets high selectivity applications with

tunable removal rates, selectivities, and performance on patterns.

OPTIPLANE™ 1600 slurry offers a solution for high selectivity applications;

OPTIPLANE™ 1601 slurry enables improved topography and dishing control.

IC1010 pad, 93/87 rpm carrier/platen speed, 7 lbf pressure on Kinik AD3CS211250-1FN

conditioning disk, 150 mL/min slurry flow rate, 3 psi down-force for SiN study.

Page 12: Cationic Silica Particles in Acidic CMP Slurries for ... · OPTIPLANE™ 2118 CMP Slurry Advantage –Low Scratch Defects DOW RESTRICTED 9 IC1000TM Pad VISIONPADTM 6000 Pad A 70%

OPTIPLANE™ 16XX Slurry Performance Summary

DOW RESTRICTED 12

Performance Metric OPTIPLANE™ 1600 Slurry OPTIPLANE™ 1601 Slurry

Particle Loading 2% 3%

Blanket TEOS RR at 3 psi, Å/min 2198 2055

Pattern HDP RR, Å/min 2017 1088

Pattern SiN RR, Å/min 109 94

Pattern Oxide:SiN Selectivity 19 12

SiN Loss at 500 Å Overpolish, Å 23 55

Dishing at 500 Å Overpolish, Å 304 146

Data shown for pattern wafers pre-planarized on P1. STI performance of experimental slurries tested on P2 using IC1010TM pad.

Performance is tabulated for the 50% pattern density feature.

OPTIPLANE™ 1601 slurry polishes with a lower pattern HDP RR relative to

OPTIPLANE™ 1600 slurry, but with lower dishing.

IC1010 pad, 3 psi down-force, 93/87 rpm carrier/platen speed, 7 lbf pressure on Kinik AD3CS211250-1FN conditioning disk,

150 mL/min slurry flow rate.

Page 13: Cationic Silica Particles in Acidic CMP Slurries for ... · OPTIPLANE™ 2118 CMP Slurry Advantage –Low Scratch Defects DOW RESTRICTED 9 IC1000TM Pad VISIONPADTM 6000 Pad A 70%

OPTIPLANE™ 1601 Slurry Performance – 50% PD Feature

DOW RESTRICTED 13

Low dishing was measured for OPTIPLANE™ 1601 slurry with respect to

P2 polish time.

IC1010TM pad, 3 psi down-force, 93/87 rpm carrier/platen speed, 7 lbf pressure on Kinik AD3CS211250-1FN conditioning

disk, 150 mL/min slurry flow rate.

Page 14: Cationic Silica Particles in Acidic CMP Slurries for ... · OPTIPLANE™ 2118 CMP Slurry Advantage –Low Scratch Defects DOW RESTRICTED 9 IC1000TM Pad VISIONPADTM 6000 Pad A 70%

Summary

Innovative cationic silica particles and an effective additive portfolio enable

tailoring of slurry platforms for desired performance.

Surface interactions between modified silica abrasives and CMP substrates

are tuned using surface active components to attain high oxide removal and

selectivity to silicon nitride. Dishing control is achieved by incorporation of

additives that reduce trench oxide loss in high selectivity applications.

OPTIPLANE™ 2118 slurry, OPTIPLANE™ 1600 slurry, and OPTIPLANE™

1601 slurry capture the capabilities of cationic silica abrasives to enable

improved performance in FEOL applications.

DOW RESTRICTED 14

Page 15: Cationic Silica Particles in Acidic CMP Slurries for ... · OPTIPLANE™ 2118 CMP Slurry Advantage –Low Scratch Defects DOW RESTRICTED 9 IC1000TM Pad VISIONPADTM 6000 Pad A 70%

ThankYou

Copyright © The Dow Chemical Company (2017). All Rights Reserved. ®™ Trademark of The Dow Chemical Company ("Dow") or an affiliated company of Dow.


Recommended