Ceramic Artificial Ferrites Prepared by Laser Ablation

Prof. Carmine Vittoria, Northeastern University, DMR-0226544

We have shown from previous work that our growth or synthesis procedure which we refer to as “artificial growth technique” is capable of producing epitaxial single crystal films of spinel ferrite. The remarkable feature of this technique is that it affects the distribution of ions without distorting the intrinsic crystal structure of garnet and spinel ferrites.

We have now entered a new phase of the research. We have introduced impurity of magnetic ions at the atomic scale into well known semiconductor materials without distorting the crystal structure of the host semiconductor material. This means that the material behaves both as semiconductor as well as magnetic ordered material, see for example hysteresis curve of semiconductor ZnO doped with Fe2O3 (~ 2 %). These type of materials will serve as the next generation of materials needed for integrated circuit (IC) chips, sensors, electronic devices, recording, wireless communication components, transducers, radar, etc.

FMR at X-band at 300KH // Film Plane

ZnO doped by Fe2O3, H//Film plane

at 300 K

Education and OutreachProf. Carmine Vittoria, Northeastern University, DMR-

0226544 1. Ms. Aria Yang worked for this project as a

graduate student. She worked on both theoretical and

experimental aspects of the project, including the film deposition, EXAFS analysis on cation distribution and characterization of the films.

2. Mr. Zachary Modest worked on this project as a high school student.

3. Dr. Bernardo Barbiellini of Physics Department was involved with us on the computational aspect of the project.

4. We are one of the participating laboratory in which teachers at the high school can work in a laboratory like ours in the summer. The funding is derived from NSF and the program is administrated by Clare Duggan of the CER (Center for electromagnetic research).