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1Subject to change without noticewwwcreecomwireless
CGH09120F120 W UHF - 25 GHz GaN HEMT for WCDMA LTE MC-GSM
Creersquos CGH09120F is a gallium nitride (GaN) high electron mobility transistor
(HEMT) designed specifically for high efficiency high gain and wide bandwidth
capabilities which makes the CGH09120F ideal for MC-GSM WCDMA and LTE
amplifier applications The transistor is supplied in a ceramicmetal flange
package
Package Type 440095PN CGH09120F
Rev 1
2 ndash
Ap
ril 2
01
2
Features
bull UHF - 25 GHz Operation
bull 21 dB Gain
bull -38 dBc ACLR at 20 W PAVE
bull 35 Efficiency at 20 W PAVE
bull High Degree of DPD Correction Can be Applied
Typical Performance Over 800-950 MHz (TC = 25˚C) of Demonstration Amplifier
Parameter 800 MHz 850 MHz 900 MHz 950 MHz Units
Gain 43 dBm 192 210 216 216 dB
ACLR 43 dBm -405 -405 -390 -365 dBc
Drain Efficiency 43 dBm 310 337 366 393
NoteMeasured in the CGH09120F-TB amplifier circuit under WCDMA 3GPP test model 1 64 DPCH 67 clippingPAR = 881 dB 001 Probability on CCDF
2 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter Symbol Rating Units Conditions
Drain-Source Voltage VDSS 84 Volts 25˚C
Gate-to-Source Voltage VGS -10 +2 Volts 25˚C
Power Dissipation PDISS 56 Watts
Storage Temperature TSTG -65 +150 ˚C
Operating Junction Temperature TJ 225 ˚C
Maximum Forward Gate Current IGMAX 30 mA 25˚C
Maximum Drain Current1 IDMAX 12 A 25˚C
Soldering Temperature2 TS 245 ˚C
Screw Torque τ 80 in-oz
Thermal Resistance Junction to Case3 RθJC 17 ˚CW 85˚C
Case Operating Temperature3 TC -40 +150 ˚C 30 seconds
Note1 Current limit for long term reliable operation2 Refer to the Application Note on soldering at wwwcreecomproductswireless_appnotesasp3 Measured for the CGH09120F at PDISS = 56 W
Electrical Characteristics (TC = 25˚C)
Characteristics Symbol Min Typ Max Units Conditions
DC Characteristics1
Gate Threshold Voltage VGS(th) -38 -30 -23 VDC VDS = 10 V ID = 288 mA
Gate Quiescent Voltage VGS(Q) ndash -27 ndash VDC VDS = 28 V ID = 12 A
Saturated Drain Current2 IDS 232 280 ndash A VDS = 60 V VGS = 20 V
Drain-Source Breakdown Voltage VBR 120 ndash ndash VDC VGS = -8 V ID = 288 mA
RF Characteristics5 (TC = 25˚C F0 = 870 MHz unless otherwise noted)
Saturated Output Power34 PSAT ndash 120 ndash W VDD = 28 V IDQ = 12 A
Pulsed Drain Efficiency3 η ndash 75 ndash VDD = 28 V IDQ = 12 A POUT = PSAT
Modulated Gain6 GSS 20 215 ndash dB VDD = 28 V IDQ = 12 A POUT = 43 dBm
WCDMA Linearity6 ACLR ndash -38 ndash34 dBc VDD = 28 V IDQ = 12 A POUT = 43 dBm
Modulated Drain Efficiency6 η 31 35 ndash VDD = 28 V IDQ = 12 A POUT = 43 dBm
Output Mismatch Stress VSWR ndash ndash 10 1 YNo damage at all phase angles VDD = 28 V IDQ = 12 A POUT = 20 W CW
Dynamic Characteristics
Input Capacitance CGS ndash 353 ndash pF VDS = 28 V Vgs = -8 V f = 1 MHz
Output Capacitance CDS ndash 91 ndash pF VDS = 28 V Vgs = -8 V f = 1 MHz
Feedback Capacitance CGD ndash 16 ndash pF VDS = 28 V Vgs = -8 V f = 1 MHz
Notes1 Measured on wafer prior to packaging2 Scaled from PCM data3 Pulse Width = 40 μS Duty Cycle = 5 4 PSAT is defined as IG = 10 mA peak5 Measured in CGH09120F-TB6 Single Carrier WCDMA 3GPP Test Model 1 64 DPCH 67 Clipping PAR = 881 dB 001 Probability on CCDF
3 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical Pulse Performance
Typical Pulsed Output Power Drain Efficiency and Gain vs Input Power of the CGH09120F measured in CGH09120F-TB Amplifier Circuit
VDS = 28 V IDS = 12 A Freq = 870 MHz Pulse Width = 40 μS Duty Cycle = 5
Typical Pulsed Saturated Power vs Frequencyof the CGH09120F measured in CGH09120F-TB Amplifier Circuit
VDS = 28 V IDS = 12 A PSAT = 10 mA IGS Peak Pulse Width = 40 μS Duty Cycle = 5
50
60
70
80
90
100
520
524
528
532
536
540D
rain
Effic
ienc
y(
)
Satu
rate
dO
utpu
tPow
er(d
Bm
)
Psat
DrainEfficiency
0
10
20
30
40
50
500
504
508
512
516
520
700 750 800 850 900 950 1000
Dra
inEf
ficie
ncy
()
Satu
rate
dO
utpu
tPow
er(d
Bm
)
Frequency (MHz)
Psat
Drain Efficiency
Psat
17
19
21
23
25
40
50
60
70
80
Gai
n(d
B)
Out
putP
ower
(dB
m)
Dra
inEf
ficie
ncy
()
Gain
OutputPower
9
11
13
15
17
0
10
20
30
40
0 5 10 15 20 25 30 35 40
Gai
n(d
B)
Out
putP
ower
(dB
m)
Dra
inEf
ficie
ncy
()
Input Power (dBm)
Output Power
Drain Efficiency
Gain
DrainEfficiency
4 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical Linear Performance
Typical Small Signal Gain and Return Loss vs Frequencyof the CGH09120F measured in CGH09120F-TB Amplifier Circuit
VDS = 28 V IDS = 12 A
Typical WCDMA Performance
Typical WCDMA Characteristics ACLR and Drain Efficiency vs Output Powerof the CGH09120F measured in CGH09120F-TB Amplifier Circuit
3GPP Test Model 1 64 DPCH 67 Clipping 881 dB PAR 001 VDS = 28 V IDS = 12 A Frequency = 870 MHz
25
30
35
40
45
50
-40
-38
-36
-34
-32
-30
Dra
inEf
ficie
ncy
()
AC
LR(d
Bc)
-ACLR
+ACLR
Drain Efficiency
ACLR
0
5
10
15
20
25
-50
-48
-46
-44
-42
-40
25 30 35 40 45 50
Dra
inEf
ficie
ncy
()
AC
LR(d
Bc)
Output Power (dBm)
DrainEfficiency
-5
0
5
10
19
21
23
25
Retu
rnLo
ss(d
B)
Line
arG
ain
(dB)
Gain
-20
-15
-10
-5
13
15
17
19
750 800 850 900 950 1000
Retu
rnLo
ss(d
B)
Line
arG
ain
(dB)
Frequency (MHz)
Gain
Return Loss
ReturnLoss
5 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical WCDMA Digital Pre-Distortion (DPD) Performance
WCDMA Characteristics with and without DPD Correction ACLR and Drain Efficiency vs Output Power
of the CGH09120F measured in CGH09120F-TB Amplifier CircuitTwo Channel WCDMA 75dB PAR with CFR
VDS = 28 V IDS = 12 A Frequency = 870 MHz
WCDMA Linearity with DPD Linearizer of the CGH09120F measured in CGH09120F-TB Amplifier Circuit
Two Channel WCDMA 75dB PAR with CFRVDS = 28 V IDS = 12 A POUT = 43 dBm Efficiency = 35
25
30
35
40
45
50
-45
-40
-35
-30
-25
-20
Dra
inEf
ficie
ncy
()
AC
LR(d
Bc)
Uncorrected -ACLR Uncorrected +ACLRCorrected -ACLR Corrected +ACLRUncorrected Drain Eff Corrected Drain Eff
UncorrectedACLR
0
5
10
15
20
25
-70
-65
-60
-55
-50
-45
24 29 34 39 44
Dra
inEf
ficie
ncy
()
AC
LR(d
Bc)
Output Power (dBm)
CorrectedACLR
DrainEfficiency
-50
-40
-30
-20
-10
Uncorrected
DPD Corrected
-90
-80
-70
-60
-50
840 850 860 870 880 890 900
Frequency (MHz)
6 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical Performance
Simulated Maximum Available Gain and K Factor of the CGH09120FVDD = 28 V IDQ = 12 A
Typical Noise Performance
Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH09120FVDD = 28 V IDQ = 12 A
Electrostatic Discharge (ESD) Classifications
Parameter Symbol Class Test Methodology
Human Body Model HBM 1A (gt 250 V) JEDEC JESD22 A114-D
Charge Device Model CDM II (200 lt 500 V) JEDEC JESD22 C101-C
Min
imum
Noi
se F
igur
e (d
B)
Noi
se R
esis
tanc
e (O
hms)
MA
G (d
B)
K F
acto
r
7 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Source and Load Impedances
Frequency (MHz) Z Source Z Load
700 075 - j 058 559 - j 212
750 084 - j 018 497 - j 125
800 090 + j 019 468 - j 037
850 095 + j 059 459 + j 045
900 102 + j 103 467 + j 119
950 117 + j 153 490 + j 182
1000 153 + j 210 528 + j 231
Note1 VDD = 28V IDQ = 12 A in the 440095 package
Note2 Impedances are extracted from CGH09120F-TB demonstration
circuit and are not source and load pull data derived from transistor
CGH09120F Power Dissipation De-rating Curve
Note 1 Area exceeds Maximum Case Operating Temperature (See Page 2)
D
Z Source Z Load
G
S
40
50
60
70
Pow
erD
issi
patio
n(W
)
CGH09120F Average Power Dissipation De-rating Curve
0
10
20
30
40
0 25 50 75 100 125 150 175 200 225 250
Pow
erD
issi
patio
n(W
)
Maximum Case Temperature (degC)
Note 1
8 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH09120F-TB Demonstration Amplifier Circuit Bill of Materials
Designator Description Qty
R1 RES 116W 0603 1 511 OHMS 1
R2 RES 116W 0603 1 51 OHMS 1
C1 C24 CAP 33 pF +- 5 250V 0805 ATC 600F 2
C2 CAP 30 pF +- 01pF 0603 ATC600S 1
C3 C4 CAP 33 pF +- 01pF 0603 ATC600S 2
C5 C6 CAP 27 pF +- 01pF 0603 ATC600S 2
C7 C8 C9 C10 C11 C12 CAP 68pF +- 025 pF 0603 ATC600S 6
C13 C25 CAP 56 pF +- 5 0603 ATC600S 2
C14 C26 CAP 100 pF +-5 0603 ATC600S 2
C15 C27 CAP 470 pF 5 100V 0603 X7R 2
C16 C28 CAP 33000 pF 0805 100V X7R 2
C17 CAP 10 uF 16V TANTALUM 1
C18 C19 C20 C21 CAP 39 pF +- 01pF 0603 ATC600S 4
C22 C23 CAP 24PF +-01 pF 0603 ATC600S 2
C29 CAP 10 uF +-10 1210 100V X7R 1
C30 CAP 100 uF 160V ELECTROLYTIC 1
L1 INDUCTOR CHIP 10nH 0603 SMT 1
L2 FERRITE 22 OHM 0805 BLM21PG220SN1 1
J1 J2 CONN N-Type Female 0500 SMA Flange 2
J3 CONN Header RTgt PLZ 01 CEN LK 9 POS 1
- PCB RO4003 Er = 338 h = 32 mil 1
- CGH09120F 1
CGH09120F-TB Demonstration Amplifier Circuit
9 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH09120F-TB Demonstration Amplifier Circuit Schematic
CGH09120F-TB Demonstration Amplifier Circuit Outline
10 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical Package S-Parameters for CGH09120F(Small Signal VDS = 28 V IDQ = 12 A angle in degrees)
Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22
500 MHz 0962 -17769 416 8041 0006 1501 0812 -17978
600 MHz 0962 -17894 346 7769 0006 1716 0814 17992
700 MHz 0962 -17997 297 7509 0006 1938 0815 17965
800 MHz 0962 17914 259 7258 0006 2164 0816 17940
900 MHz 0962 17833 230 7014 0006 2389 0818 17915
10 GHz 0962 17759 207 6774 0007 2612 0820 17890
11 GHz 0962 17688 188 6540 0007 2830 0821 17864
12 GHz 0962 17621 173 6309 0007 3042 0823 17837
13 GHz 0961 17555 159 6083 0007 3247 0825 17809
14 GHz 0961 17491 148 5860 0008 3443 0827 17780
15 GHz 0961 17428 138 5640 0008 3630 0829 17750
16 GHz 0961 17365 129 5424 0008 3806 0831 17718
17 GHz 0961 17302 122 5212 0008 3970 0833 17684
18 GHz 0960 17240 115 5002 0009 4124 0835 17649
19 GHz 0960 17177 109 4796 0009 4265 0836 17613
20 GHz 0960 17114 104 4593 0010 4395 0838 17575
21 GHz 0959 17050 100 4392 0010 4513 0840 17535
22 GHz 0959 16986 095 4194 0011 4619 0841 17493
23 GHz 0958 16920 092 3999 0011 4713 0843 17450
24 GHz 0958 16854 088 3807 0012 4796 0844 17405
25 GHz 0957 16786 085 3616 0013 4868 0846 17359
26 GHz 0956 16717 082 3428 0013 4930 0847 17311
27 GHz 0956 16646 080 3242 0014 4981 0848 17261
28 GHz 0955 16574 078 3058 0015 5022 0849 17210
29 GHz 0954 16500 076 2875 0015 5054 0850 17156
30 GHz 0953 16424 074 2694 0016 5076 0850 17101
32 GHz 0951 16265 071 2334 0018 5094 0851 16986
34 GHz 0948 16096 068 1978 0021 5078 0851 16862
36 GHz 0945 15915 067 1622 0023 5030 0850 16731
38 GHz 0941 15721 065 1264 0026 4950 0848 16590
40 GHz 0936 15511 065 902 0029 4838 0846 16439
42 GHz 0931 15281 064 533 0033 4695 0842 16278
44 GHz 0924 15030 065 152 0038 4518 0837 16104
46 GHz 0916 14752 066 -244 0043 4305 0831 15917
48 GHz 0907 14444 067 -659 0049 4054 0823 15714
50 GHz 0896 14098 069 -1101 0056 3759 0813 15494
52 GHz 0882 13708 072 -1575 0065 3417 0801 15255
54 GHz 0865 13266 075 -2088 0075 3019 0786 14994
56 GHz 0844 12759 079 -2651 0087 2559 0769 14710
58 GHz 0818 12174 084 -3273 0102 2026 0749 14399
60 GHz 0787 11495 090 -3965 0119 1411 0725 14060
Download this s-parameter file in ldquos2prdquo format at httpwwwcreecomproductswireless_s-parametersasp
11 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Product Dimensions CGH09120F (Package Type mdash 440095)
12 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Disclaimer
Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet
to be accurate and reliable However no responsibility is assumed by Cree for any infringement of patents or other
rights of third parties which may result from its use No license is granted by implication or otherwise under any patent
or patent rights of Cree Cree makes no warranty representation or guarantee regarding the suitability of its products
for any particular purpose ldquoTypicalrdquo parameters are the average values expected by Cree in large quantities and are
provided for information purposes only These values can and do vary in different applications and actual performance
can vary over time All operating parameters should be validated by customerrsquos technical experts for each application
Cree products are not designed intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life in applications in which the failure of the Cree product could result
in personal injury or death or in applications for planning construction maintenance or direct operation of a nuclear
facility
For more information please contact
Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomwireless
Sarah MillerMarketing amp ExportCree RF Components19194075302
Ryan BakerMarketingCree RF Components19194077816
Tom DekkerSales DirectorCree RF Components19194075639
2 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter Symbol Rating Units Conditions
Drain-Source Voltage VDSS 84 Volts 25˚C
Gate-to-Source Voltage VGS -10 +2 Volts 25˚C
Power Dissipation PDISS 56 Watts
Storage Temperature TSTG -65 +150 ˚C
Operating Junction Temperature TJ 225 ˚C
Maximum Forward Gate Current IGMAX 30 mA 25˚C
Maximum Drain Current1 IDMAX 12 A 25˚C
Soldering Temperature2 TS 245 ˚C
Screw Torque τ 80 in-oz
Thermal Resistance Junction to Case3 RθJC 17 ˚CW 85˚C
Case Operating Temperature3 TC -40 +150 ˚C 30 seconds
Note1 Current limit for long term reliable operation2 Refer to the Application Note on soldering at wwwcreecomproductswireless_appnotesasp3 Measured for the CGH09120F at PDISS = 56 W
Electrical Characteristics (TC = 25˚C)
Characteristics Symbol Min Typ Max Units Conditions
DC Characteristics1
Gate Threshold Voltage VGS(th) -38 -30 -23 VDC VDS = 10 V ID = 288 mA
Gate Quiescent Voltage VGS(Q) ndash -27 ndash VDC VDS = 28 V ID = 12 A
Saturated Drain Current2 IDS 232 280 ndash A VDS = 60 V VGS = 20 V
Drain-Source Breakdown Voltage VBR 120 ndash ndash VDC VGS = -8 V ID = 288 mA
RF Characteristics5 (TC = 25˚C F0 = 870 MHz unless otherwise noted)
Saturated Output Power34 PSAT ndash 120 ndash W VDD = 28 V IDQ = 12 A
Pulsed Drain Efficiency3 η ndash 75 ndash VDD = 28 V IDQ = 12 A POUT = PSAT
Modulated Gain6 GSS 20 215 ndash dB VDD = 28 V IDQ = 12 A POUT = 43 dBm
WCDMA Linearity6 ACLR ndash -38 ndash34 dBc VDD = 28 V IDQ = 12 A POUT = 43 dBm
Modulated Drain Efficiency6 η 31 35 ndash VDD = 28 V IDQ = 12 A POUT = 43 dBm
Output Mismatch Stress VSWR ndash ndash 10 1 YNo damage at all phase angles VDD = 28 V IDQ = 12 A POUT = 20 W CW
Dynamic Characteristics
Input Capacitance CGS ndash 353 ndash pF VDS = 28 V Vgs = -8 V f = 1 MHz
Output Capacitance CDS ndash 91 ndash pF VDS = 28 V Vgs = -8 V f = 1 MHz
Feedback Capacitance CGD ndash 16 ndash pF VDS = 28 V Vgs = -8 V f = 1 MHz
Notes1 Measured on wafer prior to packaging2 Scaled from PCM data3 Pulse Width = 40 μS Duty Cycle = 5 4 PSAT is defined as IG = 10 mA peak5 Measured in CGH09120F-TB6 Single Carrier WCDMA 3GPP Test Model 1 64 DPCH 67 Clipping PAR = 881 dB 001 Probability on CCDF
3 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical Pulse Performance
Typical Pulsed Output Power Drain Efficiency and Gain vs Input Power of the CGH09120F measured in CGH09120F-TB Amplifier Circuit
VDS = 28 V IDS = 12 A Freq = 870 MHz Pulse Width = 40 μS Duty Cycle = 5
Typical Pulsed Saturated Power vs Frequencyof the CGH09120F measured in CGH09120F-TB Amplifier Circuit
VDS = 28 V IDS = 12 A PSAT = 10 mA IGS Peak Pulse Width = 40 μS Duty Cycle = 5
50
60
70
80
90
100
520
524
528
532
536
540D
rain
Effic
ienc
y(
)
Satu
rate
dO
utpu
tPow
er(d
Bm
)
Psat
DrainEfficiency
0
10
20
30
40
50
500
504
508
512
516
520
700 750 800 850 900 950 1000
Dra
inEf
ficie
ncy
()
Satu
rate
dO
utpu
tPow
er(d
Bm
)
Frequency (MHz)
Psat
Drain Efficiency
Psat
17
19
21
23
25
40
50
60
70
80
Gai
n(d
B)
Out
putP
ower
(dB
m)
Dra
inEf
ficie
ncy
()
Gain
OutputPower
9
11
13
15
17
0
10
20
30
40
0 5 10 15 20 25 30 35 40
Gai
n(d
B)
Out
putP
ower
(dB
m)
Dra
inEf
ficie
ncy
()
Input Power (dBm)
Output Power
Drain Efficiency
Gain
DrainEfficiency
4 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical Linear Performance
Typical Small Signal Gain and Return Loss vs Frequencyof the CGH09120F measured in CGH09120F-TB Amplifier Circuit
VDS = 28 V IDS = 12 A
Typical WCDMA Performance
Typical WCDMA Characteristics ACLR and Drain Efficiency vs Output Powerof the CGH09120F measured in CGH09120F-TB Amplifier Circuit
3GPP Test Model 1 64 DPCH 67 Clipping 881 dB PAR 001 VDS = 28 V IDS = 12 A Frequency = 870 MHz
25
30
35
40
45
50
-40
-38
-36
-34
-32
-30
Dra
inEf
ficie
ncy
()
AC
LR(d
Bc)
-ACLR
+ACLR
Drain Efficiency
ACLR
0
5
10
15
20
25
-50
-48
-46
-44
-42
-40
25 30 35 40 45 50
Dra
inEf
ficie
ncy
()
AC
LR(d
Bc)
Output Power (dBm)
DrainEfficiency
-5
0
5
10
19
21
23
25
Retu
rnLo
ss(d
B)
Line
arG
ain
(dB)
Gain
-20
-15
-10
-5
13
15
17
19
750 800 850 900 950 1000
Retu
rnLo
ss(d
B)
Line
arG
ain
(dB)
Frequency (MHz)
Gain
Return Loss
ReturnLoss
5 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical WCDMA Digital Pre-Distortion (DPD) Performance
WCDMA Characteristics with and without DPD Correction ACLR and Drain Efficiency vs Output Power
of the CGH09120F measured in CGH09120F-TB Amplifier CircuitTwo Channel WCDMA 75dB PAR with CFR
VDS = 28 V IDS = 12 A Frequency = 870 MHz
WCDMA Linearity with DPD Linearizer of the CGH09120F measured in CGH09120F-TB Amplifier Circuit
Two Channel WCDMA 75dB PAR with CFRVDS = 28 V IDS = 12 A POUT = 43 dBm Efficiency = 35
25
30
35
40
45
50
-45
-40
-35
-30
-25
-20
Dra
inEf
ficie
ncy
()
AC
LR(d
Bc)
Uncorrected -ACLR Uncorrected +ACLRCorrected -ACLR Corrected +ACLRUncorrected Drain Eff Corrected Drain Eff
UncorrectedACLR
0
5
10
15
20
25
-70
-65
-60
-55
-50
-45
24 29 34 39 44
Dra
inEf
ficie
ncy
()
AC
LR(d
Bc)
Output Power (dBm)
CorrectedACLR
DrainEfficiency
-50
-40
-30
-20
-10
Uncorrected
DPD Corrected
-90
-80
-70
-60
-50
840 850 860 870 880 890 900
Frequency (MHz)
6 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical Performance
Simulated Maximum Available Gain and K Factor of the CGH09120FVDD = 28 V IDQ = 12 A
Typical Noise Performance
Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH09120FVDD = 28 V IDQ = 12 A
Electrostatic Discharge (ESD) Classifications
Parameter Symbol Class Test Methodology
Human Body Model HBM 1A (gt 250 V) JEDEC JESD22 A114-D
Charge Device Model CDM II (200 lt 500 V) JEDEC JESD22 C101-C
Min
imum
Noi
se F
igur
e (d
B)
Noi
se R
esis
tanc
e (O
hms)
MA
G (d
B)
K F
acto
r
7 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Source and Load Impedances
Frequency (MHz) Z Source Z Load
700 075 - j 058 559 - j 212
750 084 - j 018 497 - j 125
800 090 + j 019 468 - j 037
850 095 + j 059 459 + j 045
900 102 + j 103 467 + j 119
950 117 + j 153 490 + j 182
1000 153 + j 210 528 + j 231
Note1 VDD = 28V IDQ = 12 A in the 440095 package
Note2 Impedances are extracted from CGH09120F-TB demonstration
circuit and are not source and load pull data derived from transistor
CGH09120F Power Dissipation De-rating Curve
Note 1 Area exceeds Maximum Case Operating Temperature (See Page 2)
D
Z Source Z Load
G
S
40
50
60
70
Pow
erD
issi
patio
n(W
)
CGH09120F Average Power Dissipation De-rating Curve
0
10
20
30
40
0 25 50 75 100 125 150 175 200 225 250
Pow
erD
issi
patio
n(W
)
Maximum Case Temperature (degC)
Note 1
8 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH09120F-TB Demonstration Amplifier Circuit Bill of Materials
Designator Description Qty
R1 RES 116W 0603 1 511 OHMS 1
R2 RES 116W 0603 1 51 OHMS 1
C1 C24 CAP 33 pF +- 5 250V 0805 ATC 600F 2
C2 CAP 30 pF +- 01pF 0603 ATC600S 1
C3 C4 CAP 33 pF +- 01pF 0603 ATC600S 2
C5 C6 CAP 27 pF +- 01pF 0603 ATC600S 2
C7 C8 C9 C10 C11 C12 CAP 68pF +- 025 pF 0603 ATC600S 6
C13 C25 CAP 56 pF +- 5 0603 ATC600S 2
C14 C26 CAP 100 pF +-5 0603 ATC600S 2
C15 C27 CAP 470 pF 5 100V 0603 X7R 2
C16 C28 CAP 33000 pF 0805 100V X7R 2
C17 CAP 10 uF 16V TANTALUM 1
C18 C19 C20 C21 CAP 39 pF +- 01pF 0603 ATC600S 4
C22 C23 CAP 24PF +-01 pF 0603 ATC600S 2
C29 CAP 10 uF +-10 1210 100V X7R 1
C30 CAP 100 uF 160V ELECTROLYTIC 1
L1 INDUCTOR CHIP 10nH 0603 SMT 1
L2 FERRITE 22 OHM 0805 BLM21PG220SN1 1
J1 J2 CONN N-Type Female 0500 SMA Flange 2
J3 CONN Header RTgt PLZ 01 CEN LK 9 POS 1
- PCB RO4003 Er = 338 h = 32 mil 1
- CGH09120F 1
CGH09120F-TB Demonstration Amplifier Circuit
9 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH09120F-TB Demonstration Amplifier Circuit Schematic
CGH09120F-TB Demonstration Amplifier Circuit Outline
10 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical Package S-Parameters for CGH09120F(Small Signal VDS = 28 V IDQ = 12 A angle in degrees)
Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22
500 MHz 0962 -17769 416 8041 0006 1501 0812 -17978
600 MHz 0962 -17894 346 7769 0006 1716 0814 17992
700 MHz 0962 -17997 297 7509 0006 1938 0815 17965
800 MHz 0962 17914 259 7258 0006 2164 0816 17940
900 MHz 0962 17833 230 7014 0006 2389 0818 17915
10 GHz 0962 17759 207 6774 0007 2612 0820 17890
11 GHz 0962 17688 188 6540 0007 2830 0821 17864
12 GHz 0962 17621 173 6309 0007 3042 0823 17837
13 GHz 0961 17555 159 6083 0007 3247 0825 17809
14 GHz 0961 17491 148 5860 0008 3443 0827 17780
15 GHz 0961 17428 138 5640 0008 3630 0829 17750
16 GHz 0961 17365 129 5424 0008 3806 0831 17718
17 GHz 0961 17302 122 5212 0008 3970 0833 17684
18 GHz 0960 17240 115 5002 0009 4124 0835 17649
19 GHz 0960 17177 109 4796 0009 4265 0836 17613
20 GHz 0960 17114 104 4593 0010 4395 0838 17575
21 GHz 0959 17050 100 4392 0010 4513 0840 17535
22 GHz 0959 16986 095 4194 0011 4619 0841 17493
23 GHz 0958 16920 092 3999 0011 4713 0843 17450
24 GHz 0958 16854 088 3807 0012 4796 0844 17405
25 GHz 0957 16786 085 3616 0013 4868 0846 17359
26 GHz 0956 16717 082 3428 0013 4930 0847 17311
27 GHz 0956 16646 080 3242 0014 4981 0848 17261
28 GHz 0955 16574 078 3058 0015 5022 0849 17210
29 GHz 0954 16500 076 2875 0015 5054 0850 17156
30 GHz 0953 16424 074 2694 0016 5076 0850 17101
32 GHz 0951 16265 071 2334 0018 5094 0851 16986
34 GHz 0948 16096 068 1978 0021 5078 0851 16862
36 GHz 0945 15915 067 1622 0023 5030 0850 16731
38 GHz 0941 15721 065 1264 0026 4950 0848 16590
40 GHz 0936 15511 065 902 0029 4838 0846 16439
42 GHz 0931 15281 064 533 0033 4695 0842 16278
44 GHz 0924 15030 065 152 0038 4518 0837 16104
46 GHz 0916 14752 066 -244 0043 4305 0831 15917
48 GHz 0907 14444 067 -659 0049 4054 0823 15714
50 GHz 0896 14098 069 -1101 0056 3759 0813 15494
52 GHz 0882 13708 072 -1575 0065 3417 0801 15255
54 GHz 0865 13266 075 -2088 0075 3019 0786 14994
56 GHz 0844 12759 079 -2651 0087 2559 0769 14710
58 GHz 0818 12174 084 -3273 0102 2026 0749 14399
60 GHz 0787 11495 090 -3965 0119 1411 0725 14060
Download this s-parameter file in ldquos2prdquo format at httpwwwcreecomproductswireless_s-parametersasp
11 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Product Dimensions CGH09120F (Package Type mdash 440095)
12 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Disclaimer
Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet
to be accurate and reliable However no responsibility is assumed by Cree for any infringement of patents or other
rights of third parties which may result from its use No license is granted by implication or otherwise under any patent
or patent rights of Cree Cree makes no warranty representation or guarantee regarding the suitability of its products
for any particular purpose ldquoTypicalrdquo parameters are the average values expected by Cree in large quantities and are
provided for information purposes only These values can and do vary in different applications and actual performance
can vary over time All operating parameters should be validated by customerrsquos technical experts for each application
Cree products are not designed intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life in applications in which the failure of the Cree product could result
in personal injury or death or in applications for planning construction maintenance or direct operation of a nuclear
facility
For more information please contact
Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomwireless
Sarah MillerMarketing amp ExportCree RF Components19194075302
Ryan BakerMarketingCree RF Components19194077816
Tom DekkerSales DirectorCree RF Components19194075639
3 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical Pulse Performance
Typical Pulsed Output Power Drain Efficiency and Gain vs Input Power of the CGH09120F measured in CGH09120F-TB Amplifier Circuit
VDS = 28 V IDS = 12 A Freq = 870 MHz Pulse Width = 40 μS Duty Cycle = 5
Typical Pulsed Saturated Power vs Frequencyof the CGH09120F measured in CGH09120F-TB Amplifier Circuit
VDS = 28 V IDS = 12 A PSAT = 10 mA IGS Peak Pulse Width = 40 μS Duty Cycle = 5
50
60
70
80
90
100
520
524
528
532
536
540D
rain
Effic
ienc
y(
)
Satu
rate
dO
utpu
tPow
er(d
Bm
)
Psat
DrainEfficiency
0
10
20
30
40
50
500
504
508
512
516
520
700 750 800 850 900 950 1000
Dra
inEf
ficie
ncy
()
Satu
rate
dO
utpu
tPow
er(d
Bm
)
Frequency (MHz)
Psat
Drain Efficiency
Psat
17
19
21
23
25
40
50
60
70
80
Gai
n(d
B)
Out
putP
ower
(dB
m)
Dra
inEf
ficie
ncy
()
Gain
OutputPower
9
11
13
15
17
0
10
20
30
40
0 5 10 15 20 25 30 35 40
Gai
n(d
B)
Out
putP
ower
(dB
m)
Dra
inEf
ficie
ncy
()
Input Power (dBm)
Output Power
Drain Efficiency
Gain
DrainEfficiency
4 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical Linear Performance
Typical Small Signal Gain and Return Loss vs Frequencyof the CGH09120F measured in CGH09120F-TB Amplifier Circuit
VDS = 28 V IDS = 12 A
Typical WCDMA Performance
Typical WCDMA Characteristics ACLR and Drain Efficiency vs Output Powerof the CGH09120F measured in CGH09120F-TB Amplifier Circuit
3GPP Test Model 1 64 DPCH 67 Clipping 881 dB PAR 001 VDS = 28 V IDS = 12 A Frequency = 870 MHz
25
30
35
40
45
50
-40
-38
-36
-34
-32
-30
Dra
inEf
ficie
ncy
()
AC
LR(d
Bc)
-ACLR
+ACLR
Drain Efficiency
ACLR
0
5
10
15
20
25
-50
-48
-46
-44
-42
-40
25 30 35 40 45 50
Dra
inEf
ficie
ncy
()
AC
LR(d
Bc)
Output Power (dBm)
DrainEfficiency
-5
0
5
10
19
21
23
25
Retu
rnLo
ss(d
B)
Line
arG
ain
(dB)
Gain
-20
-15
-10
-5
13
15
17
19
750 800 850 900 950 1000
Retu
rnLo
ss(d
B)
Line
arG
ain
(dB)
Frequency (MHz)
Gain
Return Loss
ReturnLoss
5 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical WCDMA Digital Pre-Distortion (DPD) Performance
WCDMA Characteristics with and without DPD Correction ACLR and Drain Efficiency vs Output Power
of the CGH09120F measured in CGH09120F-TB Amplifier CircuitTwo Channel WCDMA 75dB PAR with CFR
VDS = 28 V IDS = 12 A Frequency = 870 MHz
WCDMA Linearity with DPD Linearizer of the CGH09120F measured in CGH09120F-TB Amplifier Circuit
Two Channel WCDMA 75dB PAR with CFRVDS = 28 V IDS = 12 A POUT = 43 dBm Efficiency = 35
25
30
35
40
45
50
-45
-40
-35
-30
-25
-20
Dra
inEf
ficie
ncy
()
AC
LR(d
Bc)
Uncorrected -ACLR Uncorrected +ACLRCorrected -ACLR Corrected +ACLRUncorrected Drain Eff Corrected Drain Eff
UncorrectedACLR
0
5
10
15
20
25
-70
-65
-60
-55
-50
-45
24 29 34 39 44
Dra
inEf
ficie
ncy
()
AC
LR(d
Bc)
Output Power (dBm)
CorrectedACLR
DrainEfficiency
-50
-40
-30
-20
-10
Uncorrected
DPD Corrected
-90
-80
-70
-60
-50
840 850 860 870 880 890 900
Frequency (MHz)
6 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical Performance
Simulated Maximum Available Gain and K Factor of the CGH09120FVDD = 28 V IDQ = 12 A
Typical Noise Performance
Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH09120FVDD = 28 V IDQ = 12 A
Electrostatic Discharge (ESD) Classifications
Parameter Symbol Class Test Methodology
Human Body Model HBM 1A (gt 250 V) JEDEC JESD22 A114-D
Charge Device Model CDM II (200 lt 500 V) JEDEC JESD22 C101-C
Min
imum
Noi
se F
igur
e (d
B)
Noi
se R
esis
tanc
e (O
hms)
MA
G (d
B)
K F
acto
r
7 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Source and Load Impedances
Frequency (MHz) Z Source Z Load
700 075 - j 058 559 - j 212
750 084 - j 018 497 - j 125
800 090 + j 019 468 - j 037
850 095 + j 059 459 + j 045
900 102 + j 103 467 + j 119
950 117 + j 153 490 + j 182
1000 153 + j 210 528 + j 231
Note1 VDD = 28V IDQ = 12 A in the 440095 package
Note2 Impedances are extracted from CGH09120F-TB demonstration
circuit and are not source and load pull data derived from transistor
CGH09120F Power Dissipation De-rating Curve
Note 1 Area exceeds Maximum Case Operating Temperature (See Page 2)
D
Z Source Z Load
G
S
40
50
60
70
Pow
erD
issi
patio
n(W
)
CGH09120F Average Power Dissipation De-rating Curve
0
10
20
30
40
0 25 50 75 100 125 150 175 200 225 250
Pow
erD
issi
patio
n(W
)
Maximum Case Temperature (degC)
Note 1
8 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH09120F-TB Demonstration Amplifier Circuit Bill of Materials
Designator Description Qty
R1 RES 116W 0603 1 511 OHMS 1
R2 RES 116W 0603 1 51 OHMS 1
C1 C24 CAP 33 pF +- 5 250V 0805 ATC 600F 2
C2 CAP 30 pF +- 01pF 0603 ATC600S 1
C3 C4 CAP 33 pF +- 01pF 0603 ATC600S 2
C5 C6 CAP 27 pF +- 01pF 0603 ATC600S 2
C7 C8 C9 C10 C11 C12 CAP 68pF +- 025 pF 0603 ATC600S 6
C13 C25 CAP 56 pF +- 5 0603 ATC600S 2
C14 C26 CAP 100 pF +-5 0603 ATC600S 2
C15 C27 CAP 470 pF 5 100V 0603 X7R 2
C16 C28 CAP 33000 pF 0805 100V X7R 2
C17 CAP 10 uF 16V TANTALUM 1
C18 C19 C20 C21 CAP 39 pF +- 01pF 0603 ATC600S 4
C22 C23 CAP 24PF +-01 pF 0603 ATC600S 2
C29 CAP 10 uF +-10 1210 100V X7R 1
C30 CAP 100 uF 160V ELECTROLYTIC 1
L1 INDUCTOR CHIP 10nH 0603 SMT 1
L2 FERRITE 22 OHM 0805 BLM21PG220SN1 1
J1 J2 CONN N-Type Female 0500 SMA Flange 2
J3 CONN Header RTgt PLZ 01 CEN LK 9 POS 1
- PCB RO4003 Er = 338 h = 32 mil 1
- CGH09120F 1
CGH09120F-TB Demonstration Amplifier Circuit
9 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH09120F-TB Demonstration Amplifier Circuit Schematic
CGH09120F-TB Demonstration Amplifier Circuit Outline
10 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical Package S-Parameters for CGH09120F(Small Signal VDS = 28 V IDQ = 12 A angle in degrees)
Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22
500 MHz 0962 -17769 416 8041 0006 1501 0812 -17978
600 MHz 0962 -17894 346 7769 0006 1716 0814 17992
700 MHz 0962 -17997 297 7509 0006 1938 0815 17965
800 MHz 0962 17914 259 7258 0006 2164 0816 17940
900 MHz 0962 17833 230 7014 0006 2389 0818 17915
10 GHz 0962 17759 207 6774 0007 2612 0820 17890
11 GHz 0962 17688 188 6540 0007 2830 0821 17864
12 GHz 0962 17621 173 6309 0007 3042 0823 17837
13 GHz 0961 17555 159 6083 0007 3247 0825 17809
14 GHz 0961 17491 148 5860 0008 3443 0827 17780
15 GHz 0961 17428 138 5640 0008 3630 0829 17750
16 GHz 0961 17365 129 5424 0008 3806 0831 17718
17 GHz 0961 17302 122 5212 0008 3970 0833 17684
18 GHz 0960 17240 115 5002 0009 4124 0835 17649
19 GHz 0960 17177 109 4796 0009 4265 0836 17613
20 GHz 0960 17114 104 4593 0010 4395 0838 17575
21 GHz 0959 17050 100 4392 0010 4513 0840 17535
22 GHz 0959 16986 095 4194 0011 4619 0841 17493
23 GHz 0958 16920 092 3999 0011 4713 0843 17450
24 GHz 0958 16854 088 3807 0012 4796 0844 17405
25 GHz 0957 16786 085 3616 0013 4868 0846 17359
26 GHz 0956 16717 082 3428 0013 4930 0847 17311
27 GHz 0956 16646 080 3242 0014 4981 0848 17261
28 GHz 0955 16574 078 3058 0015 5022 0849 17210
29 GHz 0954 16500 076 2875 0015 5054 0850 17156
30 GHz 0953 16424 074 2694 0016 5076 0850 17101
32 GHz 0951 16265 071 2334 0018 5094 0851 16986
34 GHz 0948 16096 068 1978 0021 5078 0851 16862
36 GHz 0945 15915 067 1622 0023 5030 0850 16731
38 GHz 0941 15721 065 1264 0026 4950 0848 16590
40 GHz 0936 15511 065 902 0029 4838 0846 16439
42 GHz 0931 15281 064 533 0033 4695 0842 16278
44 GHz 0924 15030 065 152 0038 4518 0837 16104
46 GHz 0916 14752 066 -244 0043 4305 0831 15917
48 GHz 0907 14444 067 -659 0049 4054 0823 15714
50 GHz 0896 14098 069 -1101 0056 3759 0813 15494
52 GHz 0882 13708 072 -1575 0065 3417 0801 15255
54 GHz 0865 13266 075 -2088 0075 3019 0786 14994
56 GHz 0844 12759 079 -2651 0087 2559 0769 14710
58 GHz 0818 12174 084 -3273 0102 2026 0749 14399
60 GHz 0787 11495 090 -3965 0119 1411 0725 14060
Download this s-parameter file in ldquos2prdquo format at httpwwwcreecomproductswireless_s-parametersasp
11 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Product Dimensions CGH09120F (Package Type mdash 440095)
12 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Disclaimer
Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet
to be accurate and reliable However no responsibility is assumed by Cree for any infringement of patents or other
rights of third parties which may result from its use No license is granted by implication or otherwise under any patent
or patent rights of Cree Cree makes no warranty representation or guarantee regarding the suitability of its products
for any particular purpose ldquoTypicalrdquo parameters are the average values expected by Cree in large quantities and are
provided for information purposes only These values can and do vary in different applications and actual performance
can vary over time All operating parameters should be validated by customerrsquos technical experts for each application
Cree products are not designed intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life in applications in which the failure of the Cree product could result
in personal injury or death or in applications for planning construction maintenance or direct operation of a nuclear
facility
For more information please contact
Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomwireless
Sarah MillerMarketing amp ExportCree RF Components19194075302
Ryan BakerMarketingCree RF Components19194077816
Tom DekkerSales DirectorCree RF Components19194075639
4 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical Linear Performance
Typical Small Signal Gain and Return Loss vs Frequencyof the CGH09120F measured in CGH09120F-TB Amplifier Circuit
VDS = 28 V IDS = 12 A
Typical WCDMA Performance
Typical WCDMA Characteristics ACLR and Drain Efficiency vs Output Powerof the CGH09120F measured in CGH09120F-TB Amplifier Circuit
3GPP Test Model 1 64 DPCH 67 Clipping 881 dB PAR 001 VDS = 28 V IDS = 12 A Frequency = 870 MHz
25
30
35
40
45
50
-40
-38
-36
-34
-32
-30
Dra
inEf
ficie
ncy
()
AC
LR(d
Bc)
-ACLR
+ACLR
Drain Efficiency
ACLR
0
5
10
15
20
25
-50
-48
-46
-44
-42
-40
25 30 35 40 45 50
Dra
inEf
ficie
ncy
()
AC
LR(d
Bc)
Output Power (dBm)
DrainEfficiency
-5
0
5
10
19
21
23
25
Retu
rnLo
ss(d
B)
Line
arG
ain
(dB)
Gain
-20
-15
-10
-5
13
15
17
19
750 800 850 900 950 1000
Retu
rnLo
ss(d
B)
Line
arG
ain
(dB)
Frequency (MHz)
Gain
Return Loss
ReturnLoss
5 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical WCDMA Digital Pre-Distortion (DPD) Performance
WCDMA Characteristics with and without DPD Correction ACLR and Drain Efficiency vs Output Power
of the CGH09120F measured in CGH09120F-TB Amplifier CircuitTwo Channel WCDMA 75dB PAR with CFR
VDS = 28 V IDS = 12 A Frequency = 870 MHz
WCDMA Linearity with DPD Linearizer of the CGH09120F measured in CGH09120F-TB Amplifier Circuit
Two Channel WCDMA 75dB PAR with CFRVDS = 28 V IDS = 12 A POUT = 43 dBm Efficiency = 35
25
30
35
40
45
50
-45
-40
-35
-30
-25
-20
Dra
inEf
ficie
ncy
()
AC
LR(d
Bc)
Uncorrected -ACLR Uncorrected +ACLRCorrected -ACLR Corrected +ACLRUncorrected Drain Eff Corrected Drain Eff
UncorrectedACLR
0
5
10
15
20
25
-70
-65
-60
-55
-50
-45
24 29 34 39 44
Dra
inEf
ficie
ncy
()
AC
LR(d
Bc)
Output Power (dBm)
CorrectedACLR
DrainEfficiency
-50
-40
-30
-20
-10
Uncorrected
DPD Corrected
-90
-80
-70
-60
-50
840 850 860 870 880 890 900
Frequency (MHz)
6 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical Performance
Simulated Maximum Available Gain and K Factor of the CGH09120FVDD = 28 V IDQ = 12 A
Typical Noise Performance
Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH09120FVDD = 28 V IDQ = 12 A
Electrostatic Discharge (ESD) Classifications
Parameter Symbol Class Test Methodology
Human Body Model HBM 1A (gt 250 V) JEDEC JESD22 A114-D
Charge Device Model CDM II (200 lt 500 V) JEDEC JESD22 C101-C
Min
imum
Noi
se F
igur
e (d
B)
Noi
se R
esis
tanc
e (O
hms)
MA
G (d
B)
K F
acto
r
7 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Source and Load Impedances
Frequency (MHz) Z Source Z Load
700 075 - j 058 559 - j 212
750 084 - j 018 497 - j 125
800 090 + j 019 468 - j 037
850 095 + j 059 459 + j 045
900 102 + j 103 467 + j 119
950 117 + j 153 490 + j 182
1000 153 + j 210 528 + j 231
Note1 VDD = 28V IDQ = 12 A in the 440095 package
Note2 Impedances are extracted from CGH09120F-TB demonstration
circuit and are not source and load pull data derived from transistor
CGH09120F Power Dissipation De-rating Curve
Note 1 Area exceeds Maximum Case Operating Temperature (See Page 2)
D
Z Source Z Load
G
S
40
50
60
70
Pow
erD
issi
patio
n(W
)
CGH09120F Average Power Dissipation De-rating Curve
0
10
20
30
40
0 25 50 75 100 125 150 175 200 225 250
Pow
erD
issi
patio
n(W
)
Maximum Case Temperature (degC)
Note 1
8 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH09120F-TB Demonstration Amplifier Circuit Bill of Materials
Designator Description Qty
R1 RES 116W 0603 1 511 OHMS 1
R2 RES 116W 0603 1 51 OHMS 1
C1 C24 CAP 33 pF +- 5 250V 0805 ATC 600F 2
C2 CAP 30 pF +- 01pF 0603 ATC600S 1
C3 C4 CAP 33 pF +- 01pF 0603 ATC600S 2
C5 C6 CAP 27 pF +- 01pF 0603 ATC600S 2
C7 C8 C9 C10 C11 C12 CAP 68pF +- 025 pF 0603 ATC600S 6
C13 C25 CAP 56 pF +- 5 0603 ATC600S 2
C14 C26 CAP 100 pF +-5 0603 ATC600S 2
C15 C27 CAP 470 pF 5 100V 0603 X7R 2
C16 C28 CAP 33000 pF 0805 100V X7R 2
C17 CAP 10 uF 16V TANTALUM 1
C18 C19 C20 C21 CAP 39 pF +- 01pF 0603 ATC600S 4
C22 C23 CAP 24PF +-01 pF 0603 ATC600S 2
C29 CAP 10 uF +-10 1210 100V X7R 1
C30 CAP 100 uF 160V ELECTROLYTIC 1
L1 INDUCTOR CHIP 10nH 0603 SMT 1
L2 FERRITE 22 OHM 0805 BLM21PG220SN1 1
J1 J2 CONN N-Type Female 0500 SMA Flange 2
J3 CONN Header RTgt PLZ 01 CEN LK 9 POS 1
- PCB RO4003 Er = 338 h = 32 mil 1
- CGH09120F 1
CGH09120F-TB Demonstration Amplifier Circuit
9 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH09120F-TB Demonstration Amplifier Circuit Schematic
CGH09120F-TB Demonstration Amplifier Circuit Outline
10 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical Package S-Parameters for CGH09120F(Small Signal VDS = 28 V IDQ = 12 A angle in degrees)
Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22
500 MHz 0962 -17769 416 8041 0006 1501 0812 -17978
600 MHz 0962 -17894 346 7769 0006 1716 0814 17992
700 MHz 0962 -17997 297 7509 0006 1938 0815 17965
800 MHz 0962 17914 259 7258 0006 2164 0816 17940
900 MHz 0962 17833 230 7014 0006 2389 0818 17915
10 GHz 0962 17759 207 6774 0007 2612 0820 17890
11 GHz 0962 17688 188 6540 0007 2830 0821 17864
12 GHz 0962 17621 173 6309 0007 3042 0823 17837
13 GHz 0961 17555 159 6083 0007 3247 0825 17809
14 GHz 0961 17491 148 5860 0008 3443 0827 17780
15 GHz 0961 17428 138 5640 0008 3630 0829 17750
16 GHz 0961 17365 129 5424 0008 3806 0831 17718
17 GHz 0961 17302 122 5212 0008 3970 0833 17684
18 GHz 0960 17240 115 5002 0009 4124 0835 17649
19 GHz 0960 17177 109 4796 0009 4265 0836 17613
20 GHz 0960 17114 104 4593 0010 4395 0838 17575
21 GHz 0959 17050 100 4392 0010 4513 0840 17535
22 GHz 0959 16986 095 4194 0011 4619 0841 17493
23 GHz 0958 16920 092 3999 0011 4713 0843 17450
24 GHz 0958 16854 088 3807 0012 4796 0844 17405
25 GHz 0957 16786 085 3616 0013 4868 0846 17359
26 GHz 0956 16717 082 3428 0013 4930 0847 17311
27 GHz 0956 16646 080 3242 0014 4981 0848 17261
28 GHz 0955 16574 078 3058 0015 5022 0849 17210
29 GHz 0954 16500 076 2875 0015 5054 0850 17156
30 GHz 0953 16424 074 2694 0016 5076 0850 17101
32 GHz 0951 16265 071 2334 0018 5094 0851 16986
34 GHz 0948 16096 068 1978 0021 5078 0851 16862
36 GHz 0945 15915 067 1622 0023 5030 0850 16731
38 GHz 0941 15721 065 1264 0026 4950 0848 16590
40 GHz 0936 15511 065 902 0029 4838 0846 16439
42 GHz 0931 15281 064 533 0033 4695 0842 16278
44 GHz 0924 15030 065 152 0038 4518 0837 16104
46 GHz 0916 14752 066 -244 0043 4305 0831 15917
48 GHz 0907 14444 067 -659 0049 4054 0823 15714
50 GHz 0896 14098 069 -1101 0056 3759 0813 15494
52 GHz 0882 13708 072 -1575 0065 3417 0801 15255
54 GHz 0865 13266 075 -2088 0075 3019 0786 14994
56 GHz 0844 12759 079 -2651 0087 2559 0769 14710
58 GHz 0818 12174 084 -3273 0102 2026 0749 14399
60 GHz 0787 11495 090 -3965 0119 1411 0725 14060
Download this s-parameter file in ldquos2prdquo format at httpwwwcreecomproductswireless_s-parametersasp
11 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Product Dimensions CGH09120F (Package Type mdash 440095)
12 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Disclaimer
Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet
to be accurate and reliable However no responsibility is assumed by Cree for any infringement of patents or other
rights of third parties which may result from its use No license is granted by implication or otherwise under any patent
or patent rights of Cree Cree makes no warranty representation or guarantee regarding the suitability of its products
for any particular purpose ldquoTypicalrdquo parameters are the average values expected by Cree in large quantities and are
provided for information purposes only These values can and do vary in different applications and actual performance
can vary over time All operating parameters should be validated by customerrsquos technical experts for each application
Cree products are not designed intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life in applications in which the failure of the Cree product could result
in personal injury or death or in applications for planning construction maintenance or direct operation of a nuclear
facility
For more information please contact
Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomwireless
Sarah MillerMarketing amp ExportCree RF Components19194075302
Ryan BakerMarketingCree RF Components19194077816
Tom DekkerSales DirectorCree RF Components19194075639
5 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical WCDMA Digital Pre-Distortion (DPD) Performance
WCDMA Characteristics with and without DPD Correction ACLR and Drain Efficiency vs Output Power
of the CGH09120F measured in CGH09120F-TB Amplifier CircuitTwo Channel WCDMA 75dB PAR with CFR
VDS = 28 V IDS = 12 A Frequency = 870 MHz
WCDMA Linearity with DPD Linearizer of the CGH09120F measured in CGH09120F-TB Amplifier Circuit
Two Channel WCDMA 75dB PAR with CFRVDS = 28 V IDS = 12 A POUT = 43 dBm Efficiency = 35
25
30
35
40
45
50
-45
-40
-35
-30
-25
-20
Dra
inEf
ficie
ncy
()
AC
LR(d
Bc)
Uncorrected -ACLR Uncorrected +ACLRCorrected -ACLR Corrected +ACLRUncorrected Drain Eff Corrected Drain Eff
UncorrectedACLR
0
5
10
15
20
25
-70
-65
-60
-55
-50
-45
24 29 34 39 44
Dra
inEf
ficie
ncy
()
AC
LR(d
Bc)
Output Power (dBm)
CorrectedACLR
DrainEfficiency
-50
-40
-30
-20
-10
Uncorrected
DPD Corrected
-90
-80
-70
-60
-50
840 850 860 870 880 890 900
Frequency (MHz)
6 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical Performance
Simulated Maximum Available Gain and K Factor of the CGH09120FVDD = 28 V IDQ = 12 A
Typical Noise Performance
Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH09120FVDD = 28 V IDQ = 12 A
Electrostatic Discharge (ESD) Classifications
Parameter Symbol Class Test Methodology
Human Body Model HBM 1A (gt 250 V) JEDEC JESD22 A114-D
Charge Device Model CDM II (200 lt 500 V) JEDEC JESD22 C101-C
Min
imum
Noi
se F
igur
e (d
B)
Noi
se R
esis
tanc
e (O
hms)
MA
G (d
B)
K F
acto
r
7 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Source and Load Impedances
Frequency (MHz) Z Source Z Load
700 075 - j 058 559 - j 212
750 084 - j 018 497 - j 125
800 090 + j 019 468 - j 037
850 095 + j 059 459 + j 045
900 102 + j 103 467 + j 119
950 117 + j 153 490 + j 182
1000 153 + j 210 528 + j 231
Note1 VDD = 28V IDQ = 12 A in the 440095 package
Note2 Impedances are extracted from CGH09120F-TB demonstration
circuit and are not source and load pull data derived from transistor
CGH09120F Power Dissipation De-rating Curve
Note 1 Area exceeds Maximum Case Operating Temperature (See Page 2)
D
Z Source Z Load
G
S
40
50
60
70
Pow
erD
issi
patio
n(W
)
CGH09120F Average Power Dissipation De-rating Curve
0
10
20
30
40
0 25 50 75 100 125 150 175 200 225 250
Pow
erD
issi
patio
n(W
)
Maximum Case Temperature (degC)
Note 1
8 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH09120F-TB Demonstration Amplifier Circuit Bill of Materials
Designator Description Qty
R1 RES 116W 0603 1 511 OHMS 1
R2 RES 116W 0603 1 51 OHMS 1
C1 C24 CAP 33 pF +- 5 250V 0805 ATC 600F 2
C2 CAP 30 pF +- 01pF 0603 ATC600S 1
C3 C4 CAP 33 pF +- 01pF 0603 ATC600S 2
C5 C6 CAP 27 pF +- 01pF 0603 ATC600S 2
C7 C8 C9 C10 C11 C12 CAP 68pF +- 025 pF 0603 ATC600S 6
C13 C25 CAP 56 pF +- 5 0603 ATC600S 2
C14 C26 CAP 100 pF +-5 0603 ATC600S 2
C15 C27 CAP 470 pF 5 100V 0603 X7R 2
C16 C28 CAP 33000 pF 0805 100V X7R 2
C17 CAP 10 uF 16V TANTALUM 1
C18 C19 C20 C21 CAP 39 pF +- 01pF 0603 ATC600S 4
C22 C23 CAP 24PF +-01 pF 0603 ATC600S 2
C29 CAP 10 uF +-10 1210 100V X7R 1
C30 CAP 100 uF 160V ELECTROLYTIC 1
L1 INDUCTOR CHIP 10nH 0603 SMT 1
L2 FERRITE 22 OHM 0805 BLM21PG220SN1 1
J1 J2 CONN N-Type Female 0500 SMA Flange 2
J3 CONN Header RTgt PLZ 01 CEN LK 9 POS 1
- PCB RO4003 Er = 338 h = 32 mil 1
- CGH09120F 1
CGH09120F-TB Demonstration Amplifier Circuit
9 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH09120F-TB Demonstration Amplifier Circuit Schematic
CGH09120F-TB Demonstration Amplifier Circuit Outline
10 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical Package S-Parameters for CGH09120F(Small Signal VDS = 28 V IDQ = 12 A angle in degrees)
Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22
500 MHz 0962 -17769 416 8041 0006 1501 0812 -17978
600 MHz 0962 -17894 346 7769 0006 1716 0814 17992
700 MHz 0962 -17997 297 7509 0006 1938 0815 17965
800 MHz 0962 17914 259 7258 0006 2164 0816 17940
900 MHz 0962 17833 230 7014 0006 2389 0818 17915
10 GHz 0962 17759 207 6774 0007 2612 0820 17890
11 GHz 0962 17688 188 6540 0007 2830 0821 17864
12 GHz 0962 17621 173 6309 0007 3042 0823 17837
13 GHz 0961 17555 159 6083 0007 3247 0825 17809
14 GHz 0961 17491 148 5860 0008 3443 0827 17780
15 GHz 0961 17428 138 5640 0008 3630 0829 17750
16 GHz 0961 17365 129 5424 0008 3806 0831 17718
17 GHz 0961 17302 122 5212 0008 3970 0833 17684
18 GHz 0960 17240 115 5002 0009 4124 0835 17649
19 GHz 0960 17177 109 4796 0009 4265 0836 17613
20 GHz 0960 17114 104 4593 0010 4395 0838 17575
21 GHz 0959 17050 100 4392 0010 4513 0840 17535
22 GHz 0959 16986 095 4194 0011 4619 0841 17493
23 GHz 0958 16920 092 3999 0011 4713 0843 17450
24 GHz 0958 16854 088 3807 0012 4796 0844 17405
25 GHz 0957 16786 085 3616 0013 4868 0846 17359
26 GHz 0956 16717 082 3428 0013 4930 0847 17311
27 GHz 0956 16646 080 3242 0014 4981 0848 17261
28 GHz 0955 16574 078 3058 0015 5022 0849 17210
29 GHz 0954 16500 076 2875 0015 5054 0850 17156
30 GHz 0953 16424 074 2694 0016 5076 0850 17101
32 GHz 0951 16265 071 2334 0018 5094 0851 16986
34 GHz 0948 16096 068 1978 0021 5078 0851 16862
36 GHz 0945 15915 067 1622 0023 5030 0850 16731
38 GHz 0941 15721 065 1264 0026 4950 0848 16590
40 GHz 0936 15511 065 902 0029 4838 0846 16439
42 GHz 0931 15281 064 533 0033 4695 0842 16278
44 GHz 0924 15030 065 152 0038 4518 0837 16104
46 GHz 0916 14752 066 -244 0043 4305 0831 15917
48 GHz 0907 14444 067 -659 0049 4054 0823 15714
50 GHz 0896 14098 069 -1101 0056 3759 0813 15494
52 GHz 0882 13708 072 -1575 0065 3417 0801 15255
54 GHz 0865 13266 075 -2088 0075 3019 0786 14994
56 GHz 0844 12759 079 -2651 0087 2559 0769 14710
58 GHz 0818 12174 084 -3273 0102 2026 0749 14399
60 GHz 0787 11495 090 -3965 0119 1411 0725 14060
Download this s-parameter file in ldquos2prdquo format at httpwwwcreecomproductswireless_s-parametersasp
11 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Product Dimensions CGH09120F (Package Type mdash 440095)
12 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Disclaimer
Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet
to be accurate and reliable However no responsibility is assumed by Cree for any infringement of patents or other
rights of third parties which may result from its use No license is granted by implication or otherwise under any patent
or patent rights of Cree Cree makes no warranty representation or guarantee regarding the suitability of its products
for any particular purpose ldquoTypicalrdquo parameters are the average values expected by Cree in large quantities and are
provided for information purposes only These values can and do vary in different applications and actual performance
can vary over time All operating parameters should be validated by customerrsquos technical experts for each application
Cree products are not designed intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life in applications in which the failure of the Cree product could result
in personal injury or death or in applications for planning construction maintenance or direct operation of a nuclear
facility
For more information please contact
Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomwireless
Sarah MillerMarketing amp ExportCree RF Components19194075302
Ryan BakerMarketingCree RF Components19194077816
Tom DekkerSales DirectorCree RF Components19194075639
6 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical Performance
Simulated Maximum Available Gain and K Factor of the CGH09120FVDD = 28 V IDQ = 12 A
Typical Noise Performance
Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH09120FVDD = 28 V IDQ = 12 A
Electrostatic Discharge (ESD) Classifications
Parameter Symbol Class Test Methodology
Human Body Model HBM 1A (gt 250 V) JEDEC JESD22 A114-D
Charge Device Model CDM II (200 lt 500 V) JEDEC JESD22 C101-C
Min
imum
Noi
se F
igur
e (d
B)
Noi
se R
esis
tanc
e (O
hms)
MA
G (d
B)
K F
acto
r
7 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Source and Load Impedances
Frequency (MHz) Z Source Z Load
700 075 - j 058 559 - j 212
750 084 - j 018 497 - j 125
800 090 + j 019 468 - j 037
850 095 + j 059 459 + j 045
900 102 + j 103 467 + j 119
950 117 + j 153 490 + j 182
1000 153 + j 210 528 + j 231
Note1 VDD = 28V IDQ = 12 A in the 440095 package
Note2 Impedances are extracted from CGH09120F-TB demonstration
circuit and are not source and load pull data derived from transistor
CGH09120F Power Dissipation De-rating Curve
Note 1 Area exceeds Maximum Case Operating Temperature (See Page 2)
D
Z Source Z Load
G
S
40
50
60
70
Pow
erD
issi
patio
n(W
)
CGH09120F Average Power Dissipation De-rating Curve
0
10
20
30
40
0 25 50 75 100 125 150 175 200 225 250
Pow
erD
issi
patio
n(W
)
Maximum Case Temperature (degC)
Note 1
8 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH09120F-TB Demonstration Amplifier Circuit Bill of Materials
Designator Description Qty
R1 RES 116W 0603 1 511 OHMS 1
R2 RES 116W 0603 1 51 OHMS 1
C1 C24 CAP 33 pF +- 5 250V 0805 ATC 600F 2
C2 CAP 30 pF +- 01pF 0603 ATC600S 1
C3 C4 CAP 33 pF +- 01pF 0603 ATC600S 2
C5 C6 CAP 27 pF +- 01pF 0603 ATC600S 2
C7 C8 C9 C10 C11 C12 CAP 68pF +- 025 pF 0603 ATC600S 6
C13 C25 CAP 56 pF +- 5 0603 ATC600S 2
C14 C26 CAP 100 pF +-5 0603 ATC600S 2
C15 C27 CAP 470 pF 5 100V 0603 X7R 2
C16 C28 CAP 33000 pF 0805 100V X7R 2
C17 CAP 10 uF 16V TANTALUM 1
C18 C19 C20 C21 CAP 39 pF +- 01pF 0603 ATC600S 4
C22 C23 CAP 24PF +-01 pF 0603 ATC600S 2
C29 CAP 10 uF +-10 1210 100V X7R 1
C30 CAP 100 uF 160V ELECTROLYTIC 1
L1 INDUCTOR CHIP 10nH 0603 SMT 1
L2 FERRITE 22 OHM 0805 BLM21PG220SN1 1
J1 J2 CONN N-Type Female 0500 SMA Flange 2
J3 CONN Header RTgt PLZ 01 CEN LK 9 POS 1
- PCB RO4003 Er = 338 h = 32 mil 1
- CGH09120F 1
CGH09120F-TB Demonstration Amplifier Circuit
9 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH09120F-TB Demonstration Amplifier Circuit Schematic
CGH09120F-TB Demonstration Amplifier Circuit Outline
10 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical Package S-Parameters for CGH09120F(Small Signal VDS = 28 V IDQ = 12 A angle in degrees)
Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22
500 MHz 0962 -17769 416 8041 0006 1501 0812 -17978
600 MHz 0962 -17894 346 7769 0006 1716 0814 17992
700 MHz 0962 -17997 297 7509 0006 1938 0815 17965
800 MHz 0962 17914 259 7258 0006 2164 0816 17940
900 MHz 0962 17833 230 7014 0006 2389 0818 17915
10 GHz 0962 17759 207 6774 0007 2612 0820 17890
11 GHz 0962 17688 188 6540 0007 2830 0821 17864
12 GHz 0962 17621 173 6309 0007 3042 0823 17837
13 GHz 0961 17555 159 6083 0007 3247 0825 17809
14 GHz 0961 17491 148 5860 0008 3443 0827 17780
15 GHz 0961 17428 138 5640 0008 3630 0829 17750
16 GHz 0961 17365 129 5424 0008 3806 0831 17718
17 GHz 0961 17302 122 5212 0008 3970 0833 17684
18 GHz 0960 17240 115 5002 0009 4124 0835 17649
19 GHz 0960 17177 109 4796 0009 4265 0836 17613
20 GHz 0960 17114 104 4593 0010 4395 0838 17575
21 GHz 0959 17050 100 4392 0010 4513 0840 17535
22 GHz 0959 16986 095 4194 0011 4619 0841 17493
23 GHz 0958 16920 092 3999 0011 4713 0843 17450
24 GHz 0958 16854 088 3807 0012 4796 0844 17405
25 GHz 0957 16786 085 3616 0013 4868 0846 17359
26 GHz 0956 16717 082 3428 0013 4930 0847 17311
27 GHz 0956 16646 080 3242 0014 4981 0848 17261
28 GHz 0955 16574 078 3058 0015 5022 0849 17210
29 GHz 0954 16500 076 2875 0015 5054 0850 17156
30 GHz 0953 16424 074 2694 0016 5076 0850 17101
32 GHz 0951 16265 071 2334 0018 5094 0851 16986
34 GHz 0948 16096 068 1978 0021 5078 0851 16862
36 GHz 0945 15915 067 1622 0023 5030 0850 16731
38 GHz 0941 15721 065 1264 0026 4950 0848 16590
40 GHz 0936 15511 065 902 0029 4838 0846 16439
42 GHz 0931 15281 064 533 0033 4695 0842 16278
44 GHz 0924 15030 065 152 0038 4518 0837 16104
46 GHz 0916 14752 066 -244 0043 4305 0831 15917
48 GHz 0907 14444 067 -659 0049 4054 0823 15714
50 GHz 0896 14098 069 -1101 0056 3759 0813 15494
52 GHz 0882 13708 072 -1575 0065 3417 0801 15255
54 GHz 0865 13266 075 -2088 0075 3019 0786 14994
56 GHz 0844 12759 079 -2651 0087 2559 0769 14710
58 GHz 0818 12174 084 -3273 0102 2026 0749 14399
60 GHz 0787 11495 090 -3965 0119 1411 0725 14060
Download this s-parameter file in ldquos2prdquo format at httpwwwcreecomproductswireless_s-parametersasp
11 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Product Dimensions CGH09120F (Package Type mdash 440095)
12 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Disclaimer
Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet
to be accurate and reliable However no responsibility is assumed by Cree for any infringement of patents or other
rights of third parties which may result from its use No license is granted by implication or otherwise under any patent
or patent rights of Cree Cree makes no warranty representation or guarantee regarding the suitability of its products
for any particular purpose ldquoTypicalrdquo parameters are the average values expected by Cree in large quantities and are
provided for information purposes only These values can and do vary in different applications and actual performance
can vary over time All operating parameters should be validated by customerrsquos technical experts for each application
Cree products are not designed intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life in applications in which the failure of the Cree product could result
in personal injury or death or in applications for planning construction maintenance or direct operation of a nuclear
facility
For more information please contact
Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomwireless
Sarah MillerMarketing amp ExportCree RF Components19194075302
Ryan BakerMarketingCree RF Components19194077816
Tom DekkerSales DirectorCree RF Components19194075639
7 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Source and Load Impedances
Frequency (MHz) Z Source Z Load
700 075 - j 058 559 - j 212
750 084 - j 018 497 - j 125
800 090 + j 019 468 - j 037
850 095 + j 059 459 + j 045
900 102 + j 103 467 + j 119
950 117 + j 153 490 + j 182
1000 153 + j 210 528 + j 231
Note1 VDD = 28V IDQ = 12 A in the 440095 package
Note2 Impedances are extracted from CGH09120F-TB demonstration
circuit and are not source and load pull data derived from transistor
CGH09120F Power Dissipation De-rating Curve
Note 1 Area exceeds Maximum Case Operating Temperature (See Page 2)
D
Z Source Z Load
G
S
40
50
60
70
Pow
erD
issi
patio
n(W
)
CGH09120F Average Power Dissipation De-rating Curve
0
10
20
30
40
0 25 50 75 100 125 150 175 200 225 250
Pow
erD
issi
patio
n(W
)
Maximum Case Temperature (degC)
Note 1
8 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH09120F-TB Demonstration Amplifier Circuit Bill of Materials
Designator Description Qty
R1 RES 116W 0603 1 511 OHMS 1
R2 RES 116W 0603 1 51 OHMS 1
C1 C24 CAP 33 pF +- 5 250V 0805 ATC 600F 2
C2 CAP 30 pF +- 01pF 0603 ATC600S 1
C3 C4 CAP 33 pF +- 01pF 0603 ATC600S 2
C5 C6 CAP 27 pF +- 01pF 0603 ATC600S 2
C7 C8 C9 C10 C11 C12 CAP 68pF +- 025 pF 0603 ATC600S 6
C13 C25 CAP 56 pF +- 5 0603 ATC600S 2
C14 C26 CAP 100 pF +-5 0603 ATC600S 2
C15 C27 CAP 470 pF 5 100V 0603 X7R 2
C16 C28 CAP 33000 pF 0805 100V X7R 2
C17 CAP 10 uF 16V TANTALUM 1
C18 C19 C20 C21 CAP 39 pF +- 01pF 0603 ATC600S 4
C22 C23 CAP 24PF +-01 pF 0603 ATC600S 2
C29 CAP 10 uF +-10 1210 100V X7R 1
C30 CAP 100 uF 160V ELECTROLYTIC 1
L1 INDUCTOR CHIP 10nH 0603 SMT 1
L2 FERRITE 22 OHM 0805 BLM21PG220SN1 1
J1 J2 CONN N-Type Female 0500 SMA Flange 2
J3 CONN Header RTgt PLZ 01 CEN LK 9 POS 1
- PCB RO4003 Er = 338 h = 32 mil 1
- CGH09120F 1
CGH09120F-TB Demonstration Amplifier Circuit
9 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH09120F-TB Demonstration Amplifier Circuit Schematic
CGH09120F-TB Demonstration Amplifier Circuit Outline
10 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical Package S-Parameters for CGH09120F(Small Signal VDS = 28 V IDQ = 12 A angle in degrees)
Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22
500 MHz 0962 -17769 416 8041 0006 1501 0812 -17978
600 MHz 0962 -17894 346 7769 0006 1716 0814 17992
700 MHz 0962 -17997 297 7509 0006 1938 0815 17965
800 MHz 0962 17914 259 7258 0006 2164 0816 17940
900 MHz 0962 17833 230 7014 0006 2389 0818 17915
10 GHz 0962 17759 207 6774 0007 2612 0820 17890
11 GHz 0962 17688 188 6540 0007 2830 0821 17864
12 GHz 0962 17621 173 6309 0007 3042 0823 17837
13 GHz 0961 17555 159 6083 0007 3247 0825 17809
14 GHz 0961 17491 148 5860 0008 3443 0827 17780
15 GHz 0961 17428 138 5640 0008 3630 0829 17750
16 GHz 0961 17365 129 5424 0008 3806 0831 17718
17 GHz 0961 17302 122 5212 0008 3970 0833 17684
18 GHz 0960 17240 115 5002 0009 4124 0835 17649
19 GHz 0960 17177 109 4796 0009 4265 0836 17613
20 GHz 0960 17114 104 4593 0010 4395 0838 17575
21 GHz 0959 17050 100 4392 0010 4513 0840 17535
22 GHz 0959 16986 095 4194 0011 4619 0841 17493
23 GHz 0958 16920 092 3999 0011 4713 0843 17450
24 GHz 0958 16854 088 3807 0012 4796 0844 17405
25 GHz 0957 16786 085 3616 0013 4868 0846 17359
26 GHz 0956 16717 082 3428 0013 4930 0847 17311
27 GHz 0956 16646 080 3242 0014 4981 0848 17261
28 GHz 0955 16574 078 3058 0015 5022 0849 17210
29 GHz 0954 16500 076 2875 0015 5054 0850 17156
30 GHz 0953 16424 074 2694 0016 5076 0850 17101
32 GHz 0951 16265 071 2334 0018 5094 0851 16986
34 GHz 0948 16096 068 1978 0021 5078 0851 16862
36 GHz 0945 15915 067 1622 0023 5030 0850 16731
38 GHz 0941 15721 065 1264 0026 4950 0848 16590
40 GHz 0936 15511 065 902 0029 4838 0846 16439
42 GHz 0931 15281 064 533 0033 4695 0842 16278
44 GHz 0924 15030 065 152 0038 4518 0837 16104
46 GHz 0916 14752 066 -244 0043 4305 0831 15917
48 GHz 0907 14444 067 -659 0049 4054 0823 15714
50 GHz 0896 14098 069 -1101 0056 3759 0813 15494
52 GHz 0882 13708 072 -1575 0065 3417 0801 15255
54 GHz 0865 13266 075 -2088 0075 3019 0786 14994
56 GHz 0844 12759 079 -2651 0087 2559 0769 14710
58 GHz 0818 12174 084 -3273 0102 2026 0749 14399
60 GHz 0787 11495 090 -3965 0119 1411 0725 14060
Download this s-parameter file in ldquos2prdquo format at httpwwwcreecomproductswireless_s-parametersasp
11 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Product Dimensions CGH09120F (Package Type mdash 440095)
12 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Disclaimer
Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet
to be accurate and reliable However no responsibility is assumed by Cree for any infringement of patents or other
rights of third parties which may result from its use No license is granted by implication or otherwise under any patent
or patent rights of Cree Cree makes no warranty representation or guarantee regarding the suitability of its products
for any particular purpose ldquoTypicalrdquo parameters are the average values expected by Cree in large quantities and are
provided for information purposes only These values can and do vary in different applications and actual performance
can vary over time All operating parameters should be validated by customerrsquos technical experts for each application
Cree products are not designed intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life in applications in which the failure of the Cree product could result
in personal injury or death or in applications for planning construction maintenance or direct operation of a nuclear
facility
For more information please contact
Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomwireless
Sarah MillerMarketing amp ExportCree RF Components19194075302
Ryan BakerMarketingCree RF Components19194077816
Tom DekkerSales DirectorCree RF Components19194075639
8 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH09120F-TB Demonstration Amplifier Circuit Bill of Materials
Designator Description Qty
R1 RES 116W 0603 1 511 OHMS 1
R2 RES 116W 0603 1 51 OHMS 1
C1 C24 CAP 33 pF +- 5 250V 0805 ATC 600F 2
C2 CAP 30 pF +- 01pF 0603 ATC600S 1
C3 C4 CAP 33 pF +- 01pF 0603 ATC600S 2
C5 C6 CAP 27 pF +- 01pF 0603 ATC600S 2
C7 C8 C9 C10 C11 C12 CAP 68pF +- 025 pF 0603 ATC600S 6
C13 C25 CAP 56 pF +- 5 0603 ATC600S 2
C14 C26 CAP 100 pF +-5 0603 ATC600S 2
C15 C27 CAP 470 pF 5 100V 0603 X7R 2
C16 C28 CAP 33000 pF 0805 100V X7R 2
C17 CAP 10 uF 16V TANTALUM 1
C18 C19 C20 C21 CAP 39 pF +- 01pF 0603 ATC600S 4
C22 C23 CAP 24PF +-01 pF 0603 ATC600S 2
C29 CAP 10 uF +-10 1210 100V X7R 1
C30 CAP 100 uF 160V ELECTROLYTIC 1
L1 INDUCTOR CHIP 10nH 0603 SMT 1
L2 FERRITE 22 OHM 0805 BLM21PG220SN1 1
J1 J2 CONN N-Type Female 0500 SMA Flange 2
J3 CONN Header RTgt PLZ 01 CEN LK 9 POS 1
- PCB RO4003 Er = 338 h = 32 mil 1
- CGH09120F 1
CGH09120F-TB Demonstration Amplifier Circuit
9 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH09120F-TB Demonstration Amplifier Circuit Schematic
CGH09120F-TB Demonstration Amplifier Circuit Outline
10 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical Package S-Parameters for CGH09120F(Small Signal VDS = 28 V IDQ = 12 A angle in degrees)
Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22
500 MHz 0962 -17769 416 8041 0006 1501 0812 -17978
600 MHz 0962 -17894 346 7769 0006 1716 0814 17992
700 MHz 0962 -17997 297 7509 0006 1938 0815 17965
800 MHz 0962 17914 259 7258 0006 2164 0816 17940
900 MHz 0962 17833 230 7014 0006 2389 0818 17915
10 GHz 0962 17759 207 6774 0007 2612 0820 17890
11 GHz 0962 17688 188 6540 0007 2830 0821 17864
12 GHz 0962 17621 173 6309 0007 3042 0823 17837
13 GHz 0961 17555 159 6083 0007 3247 0825 17809
14 GHz 0961 17491 148 5860 0008 3443 0827 17780
15 GHz 0961 17428 138 5640 0008 3630 0829 17750
16 GHz 0961 17365 129 5424 0008 3806 0831 17718
17 GHz 0961 17302 122 5212 0008 3970 0833 17684
18 GHz 0960 17240 115 5002 0009 4124 0835 17649
19 GHz 0960 17177 109 4796 0009 4265 0836 17613
20 GHz 0960 17114 104 4593 0010 4395 0838 17575
21 GHz 0959 17050 100 4392 0010 4513 0840 17535
22 GHz 0959 16986 095 4194 0011 4619 0841 17493
23 GHz 0958 16920 092 3999 0011 4713 0843 17450
24 GHz 0958 16854 088 3807 0012 4796 0844 17405
25 GHz 0957 16786 085 3616 0013 4868 0846 17359
26 GHz 0956 16717 082 3428 0013 4930 0847 17311
27 GHz 0956 16646 080 3242 0014 4981 0848 17261
28 GHz 0955 16574 078 3058 0015 5022 0849 17210
29 GHz 0954 16500 076 2875 0015 5054 0850 17156
30 GHz 0953 16424 074 2694 0016 5076 0850 17101
32 GHz 0951 16265 071 2334 0018 5094 0851 16986
34 GHz 0948 16096 068 1978 0021 5078 0851 16862
36 GHz 0945 15915 067 1622 0023 5030 0850 16731
38 GHz 0941 15721 065 1264 0026 4950 0848 16590
40 GHz 0936 15511 065 902 0029 4838 0846 16439
42 GHz 0931 15281 064 533 0033 4695 0842 16278
44 GHz 0924 15030 065 152 0038 4518 0837 16104
46 GHz 0916 14752 066 -244 0043 4305 0831 15917
48 GHz 0907 14444 067 -659 0049 4054 0823 15714
50 GHz 0896 14098 069 -1101 0056 3759 0813 15494
52 GHz 0882 13708 072 -1575 0065 3417 0801 15255
54 GHz 0865 13266 075 -2088 0075 3019 0786 14994
56 GHz 0844 12759 079 -2651 0087 2559 0769 14710
58 GHz 0818 12174 084 -3273 0102 2026 0749 14399
60 GHz 0787 11495 090 -3965 0119 1411 0725 14060
Download this s-parameter file in ldquos2prdquo format at httpwwwcreecomproductswireless_s-parametersasp
11 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Product Dimensions CGH09120F (Package Type mdash 440095)
12 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Disclaimer
Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet
to be accurate and reliable However no responsibility is assumed by Cree for any infringement of patents or other
rights of third parties which may result from its use No license is granted by implication or otherwise under any patent
or patent rights of Cree Cree makes no warranty representation or guarantee regarding the suitability of its products
for any particular purpose ldquoTypicalrdquo parameters are the average values expected by Cree in large quantities and are
provided for information purposes only These values can and do vary in different applications and actual performance
can vary over time All operating parameters should be validated by customerrsquos technical experts for each application
Cree products are not designed intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life in applications in which the failure of the Cree product could result
in personal injury or death or in applications for planning construction maintenance or direct operation of a nuclear
facility
For more information please contact
Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomwireless
Sarah MillerMarketing amp ExportCree RF Components19194075302
Ryan BakerMarketingCree RF Components19194077816
Tom DekkerSales DirectorCree RF Components19194075639
9 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH09120F-TB Demonstration Amplifier Circuit Schematic
CGH09120F-TB Demonstration Amplifier Circuit Outline
10 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical Package S-Parameters for CGH09120F(Small Signal VDS = 28 V IDQ = 12 A angle in degrees)
Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22
500 MHz 0962 -17769 416 8041 0006 1501 0812 -17978
600 MHz 0962 -17894 346 7769 0006 1716 0814 17992
700 MHz 0962 -17997 297 7509 0006 1938 0815 17965
800 MHz 0962 17914 259 7258 0006 2164 0816 17940
900 MHz 0962 17833 230 7014 0006 2389 0818 17915
10 GHz 0962 17759 207 6774 0007 2612 0820 17890
11 GHz 0962 17688 188 6540 0007 2830 0821 17864
12 GHz 0962 17621 173 6309 0007 3042 0823 17837
13 GHz 0961 17555 159 6083 0007 3247 0825 17809
14 GHz 0961 17491 148 5860 0008 3443 0827 17780
15 GHz 0961 17428 138 5640 0008 3630 0829 17750
16 GHz 0961 17365 129 5424 0008 3806 0831 17718
17 GHz 0961 17302 122 5212 0008 3970 0833 17684
18 GHz 0960 17240 115 5002 0009 4124 0835 17649
19 GHz 0960 17177 109 4796 0009 4265 0836 17613
20 GHz 0960 17114 104 4593 0010 4395 0838 17575
21 GHz 0959 17050 100 4392 0010 4513 0840 17535
22 GHz 0959 16986 095 4194 0011 4619 0841 17493
23 GHz 0958 16920 092 3999 0011 4713 0843 17450
24 GHz 0958 16854 088 3807 0012 4796 0844 17405
25 GHz 0957 16786 085 3616 0013 4868 0846 17359
26 GHz 0956 16717 082 3428 0013 4930 0847 17311
27 GHz 0956 16646 080 3242 0014 4981 0848 17261
28 GHz 0955 16574 078 3058 0015 5022 0849 17210
29 GHz 0954 16500 076 2875 0015 5054 0850 17156
30 GHz 0953 16424 074 2694 0016 5076 0850 17101
32 GHz 0951 16265 071 2334 0018 5094 0851 16986
34 GHz 0948 16096 068 1978 0021 5078 0851 16862
36 GHz 0945 15915 067 1622 0023 5030 0850 16731
38 GHz 0941 15721 065 1264 0026 4950 0848 16590
40 GHz 0936 15511 065 902 0029 4838 0846 16439
42 GHz 0931 15281 064 533 0033 4695 0842 16278
44 GHz 0924 15030 065 152 0038 4518 0837 16104
46 GHz 0916 14752 066 -244 0043 4305 0831 15917
48 GHz 0907 14444 067 -659 0049 4054 0823 15714
50 GHz 0896 14098 069 -1101 0056 3759 0813 15494
52 GHz 0882 13708 072 -1575 0065 3417 0801 15255
54 GHz 0865 13266 075 -2088 0075 3019 0786 14994
56 GHz 0844 12759 079 -2651 0087 2559 0769 14710
58 GHz 0818 12174 084 -3273 0102 2026 0749 14399
60 GHz 0787 11495 090 -3965 0119 1411 0725 14060
Download this s-parameter file in ldquos2prdquo format at httpwwwcreecomproductswireless_s-parametersasp
11 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Product Dimensions CGH09120F (Package Type mdash 440095)
12 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Disclaimer
Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet
to be accurate and reliable However no responsibility is assumed by Cree for any infringement of patents or other
rights of third parties which may result from its use No license is granted by implication or otherwise under any patent
or patent rights of Cree Cree makes no warranty representation or guarantee regarding the suitability of its products
for any particular purpose ldquoTypicalrdquo parameters are the average values expected by Cree in large quantities and are
provided for information purposes only These values can and do vary in different applications and actual performance
can vary over time All operating parameters should be validated by customerrsquos technical experts for each application
Cree products are not designed intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life in applications in which the failure of the Cree product could result
in personal injury or death or in applications for planning construction maintenance or direct operation of a nuclear
facility
For more information please contact
Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomwireless
Sarah MillerMarketing amp ExportCree RF Components19194075302
Ryan BakerMarketingCree RF Components19194077816
Tom DekkerSales DirectorCree RF Components19194075639
10 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical Package S-Parameters for CGH09120F(Small Signal VDS = 28 V IDQ = 12 A angle in degrees)
Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22
500 MHz 0962 -17769 416 8041 0006 1501 0812 -17978
600 MHz 0962 -17894 346 7769 0006 1716 0814 17992
700 MHz 0962 -17997 297 7509 0006 1938 0815 17965
800 MHz 0962 17914 259 7258 0006 2164 0816 17940
900 MHz 0962 17833 230 7014 0006 2389 0818 17915
10 GHz 0962 17759 207 6774 0007 2612 0820 17890
11 GHz 0962 17688 188 6540 0007 2830 0821 17864
12 GHz 0962 17621 173 6309 0007 3042 0823 17837
13 GHz 0961 17555 159 6083 0007 3247 0825 17809
14 GHz 0961 17491 148 5860 0008 3443 0827 17780
15 GHz 0961 17428 138 5640 0008 3630 0829 17750
16 GHz 0961 17365 129 5424 0008 3806 0831 17718
17 GHz 0961 17302 122 5212 0008 3970 0833 17684
18 GHz 0960 17240 115 5002 0009 4124 0835 17649
19 GHz 0960 17177 109 4796 0009 4265 0836 17613
20 GHz 0960 17114 104 4593 0010 4395 0838 17575
21 GHz 0959 17050 100 4392 0010 4513 0840 17535
22 GHz 0959 16986 095 4194 0011 4619 0841 17493
23 GHz 0958 16920 092 3999 0011 4713 0843 17450
24 GHz 0958 16854 088 3807 0012 4796 0844 17405
25 GHz 0957 16786 085 3616 0013 4868 0846 17359
26 GHz 0956 16717 082 3428 0013 4930 0847 17311
27 GHz 0956 16646 080 3242 0014 4981 0848 17261
28 GHz 0955 16574 078 3058 0015 5022 0849 17210
29 GHz 0954 16500 076 2875 0015 5054 0850 17156
30 GHz 0953 16424 074 2694 0016 5076 0850 17101
32 GHz 0951 16265 071 2334 0018 5094 0851 16986
34 GHz 0948 16096 068 1978 0021 5078 0851 16862
36 GHz 0945 15915 067 1622 0023 5030 0850 16731
38 GHz 0941 15721 065 1264 0026 4950 0848 16590
40 GHz 0936 15511 065 902 0029 4838 0846 16439
42 GHz 0931 15281 064 533 0033 4695 0842 16278
44 GHz 0924 15030 065 152 0038 4518 0837 16104
46 GHz 0916 14752 066 -244 0043 4305 0831 15917
48 GHz 0907 14444 067 -659 0049 4054 0823 15714
50 GHz 0896 14098 069 -1101 0056 3759 0813 15494
52 GHz 0882 13708 072 -1575 0065 3417 0801 15255
54 GHz 0865 13266 075 -2088 0075 3019 0786 14994
56 GHz 0844 12759 079 -2651 0087 2559 0769 14710
58 GHz 0818 12174 084 -3273 0102 2026 0749 14399
60 GHz 0787 11495 090 -3965 0119 1411 0725 14060
Download this s-parameter file in ldquos2prdquo format at httpwwwcreecomproductswireless_s-parametersasp
11 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Product Dimensions CGH09120F (Package Type mdash 440095)
12 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Disclaimer
Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet
to be accurate and reliable However no responsibility is assumed by Cree for any infringement of patents or other
rights of third parties which may result from its use No license is granted by implication or otherwise under any patent
or patent rights of Cree Cree makes no warranty representation or guarantee regarding the suitability of its products
for any particular purpose ldquoTypicalrdquo parameters are the average values expected by Cree in large quantities and are
provided for information purposes only These values can and do vary in different applications and actual performance
can vary over time All operating parameters should be validated by customerrsquos technical experts for each application
Cree products are not designed intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life in applications in which the failure of the Cree product could result
in personal injury or death or in applications for planning construction maintenance or direct operation of a nuclear
facility
For more information please contact
Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomwireless
Sarah MillerMarketing amp ExportCree RF Components19194075302
Ryan BakerMarketingCree RF Components19194077816
Tom DekkerSales DirectorCree RF Components19194075639
11 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Product Dimensions CGH09120F (Package Type mdash 440095)
12 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Disclaimer
Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet
to be accurate and reliable However no responsibility is assumed by Cree for any infringement of patents or other
rights of third parties which may result from its use No license is granted by implication or otherwise under any patent
or patent rights of Cree Cree makes no warranty representation or guarantee regarding the suitability of its products
for any particular purpose ldquoTypicalrdquo parameters are the average values expected by Cree in large quantities and are
provided for information purposes only These values can and do vary in different applications and actual performance
can vary over time All operating parameters should be validated by customerrsquos technical experts for each application
Cree products are not designed intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life in applications in which the failure of the Cree product could result
in personal injury or death or in applications for planning construction maintenance or direct operation of a nuclear
facility
For more information please contact
Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomwireless
Sarah MillerMarketing amp ExportCree RF Components19194075302
Ryan BakerMarketingCree RF Components19194077816
Tom DekkerSales DirectorCree RF Components19194075639
12 CGH09120F Rev 11
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Disclaimer
Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet
to be accurate and reliable However no responsibility is assumed by Cree for any infringement of patents or other
rights of third parties which may result from its use No license is granted by implication or otherwise under any patent
or patent rights of Cree Cree makes no warranty representation or guarantee regarding the suitability of its products
for any particular purpose ldquoTypicalrdquo parameters are the average values expected by Cree in large quantities and are
provided for information purposes only These values can and do vary in different applications and actual performance
can vary over time All operating parameters should be validated by customerrsquos technical experts for each application
Cree products are not designed intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life in applications in which the failure of the Cree product could result
in personal injury or death or in applications for planning construction maintenance or direct operation of a nuclear
facility
For more information please contact
Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomwireless
Sarah MillerMarketing amp ExportCree RF Components19194075302
Ryan BakerMarketingCree RF Components19194077816
Tom DekkerSales DirectorCree RF Components19194075639