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CGH25120F

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1 Subject to change without notice. www.cree.com/rf CGH25120F 120 W, 2300-2700 MHz, GaN HEMT for WiMAX and LTE Cree’s CGH25120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH25120F ideal for 2.3-2.7GHz WiMAX, LTE and BWA amplifier applications. The transistor is supplied in a ceramic/metal flange package. Package Type: 440162 PN: CGH25120F Rev 2.2 – September 2012 Features 2.3 - 2.7 GHz Operation 13 dB Gain -32 dBc ACLR at 20 W P AVE 30 % Efficiency at 20 W P AVE High Degree of DPD Correction Can be Applied Typical Performance Over 2.3-2.7GHz (T C = 25˚C) of Demonstration Amplifier Parameter 2.3 GHz 2.4 GHz 2.5 GHz 2.6 GHz 2.7 GHz Units Gain @ 43 dBm 12.5 12.8 13.1 13.5 13.6 dB ACLR @ 43 dBm -32.7 -34.0 -32.5 -29.5 -25.8 dBc Drain Efficiency @ 43 dBm 26.5 28.0 30.0 32.5 34.5 % Note: Measured in the CGH25120F-TB amplifier circuit, under equivalent 802.16e WiMAX signal, 10 MHz Bandwidth, PAR = 9.6 dB @ 0.01 % Probability on CCDF.
Transcript
Page 1: CGH25120F

1Subject to change without noticewwwcreecomrf

CGH25120F120 W 2300-2700 MHz GaN HEMT for WiMAX and LTE

Creersquos CGH25120F is a gallium nitride (GaN) high electron mobility transistor

(HEMT) designed specifically for high efficiency high gain and wide

bandwidth capabilities which makes the CGH25120F ideal for 23-27GHz

WiMAX LTE and BWA amplifier applications The transistor is supplied in a

ceramicmetal flange package

Package Type 440162PN CGH25120F

Rev 2

2 ndash

Sep

tem

ber

20

12

Features

bull 23 - 27 GHz Operation

bull 13 dB Gain

bull -32 dBc ACLR at 20 W PAVE

bull 30 Efficiency at 20 W PAVE

bull High Degree of DPD Correction Can be Applied

Typical Performance Over 23-27GHz (TC = 25˚C) of Demonstration Amplifier

Parameter 23 GHz 24 GHz 25 GHz 26 GHz 27 GHz Units

Gain 43 dBm 125 128 131 135 136 dB

ACLR 43 dBm -327 -340 -325 -295 -258 dBc

Drain Efficiency 43 dBm 265 280 300 325 345

NoteMeasured in the CGH25120F-TB amplifier circuit under equivalent 80216e WiMAX signal 10 MHz Bandwidth PAR = 96 dB 001 Probability on CCDF

2 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature

Parameter Symbol Rating Units Units

Drain-Source Voltage VDSS 84 Volts 25˚C

Gate-to-Source Voltage VGS -10 +2 Volts 25˚C

Storage Temperature TSTG -65 +150 ˚C

Operating Junction Temperature TJ 225 ˚C

Maximum Forward Gate Current IGMAX 30 mA 25˚C

Maximum Drain Current1 IDMAX 12 A 25˚C

Soldering Temperature2 TS 245 ˚C

Screw Torque τ 80 in-oz

Thermal Resistance Junction to Case3 RθJC 15 ˚CW 85˚C

Case Operating Temperature3 TC -40 +150 ˚C 30 seconds

Note1 Current limit for long term reliable operation2 Refer to the Application Note on soldering at wwwcreecomproductswireless_appnotesasp3 Measured for the CGH25120F at PDISS = 56 W

Electrical Characteristics (TC = 25˚C)

Characteristics Symbol Min Typ Max Units Conditions

DC Characteristics1

Gate Threshold Voltage VGS(th) -38 -30 -23 VDC VDS = 10 V ID = 288 mA

Gate Quiescent Voltage VGS(Q) ndash -27 ndash VDC VDS = 28 V ID = 05 A

Saturated Drain Current2 IDS 232 280 ndash A VDS = 60 V VGS = 20 V

Drain-Source Breakdown Voltage VBR 120 ndash ndash VDC VGS = -8 V ID = 288 mA

RF Characteristics (TC = 25˚C F0 = 25 GHz unless otherwise noted)

Saturated Output Power345 PSAT ndash 130 ndash W VDD = 28 V IDQ = 05 A

Pulsed Drain Efficiency35 η ndash 60 ndash VDD = 28 V IDQ = 05 A POUT = PSAT

Gain6 G 105 125 ndash dB VDD = 28 V IDQ = 05 A POUT = 43 dBm

WiMAX Linearity67 ACLR ndash -31 -27 dBc VDD = 28 V IDQ = 05 A POUT = 43 dBm

Drain Efficiency6 η 27 32 ndash VDD = 28 V IDQ = 05 A POUT = 43 dBm

Output Mismatch Stress VSWR ndash ndash 10 1 YNo damage at all phase angles VDD = 28 V IDQ = 10 A POUT = 20 W CW

Dynamic Characteristics

Input Capacitance8 CGS ndash 88 ndash pF VDS = 28 V Vgs = -8 V f = 1 MHz

Output Capacitance8 CDS ndash 12 ndash pF VDS = 28 V Vgs = -8 V f = 1 MHz

Feedback Capacitance CGD ndash 16 ndash pF VDS = 28 V Vgs = -8 V f = 1 MHz

Notes1 Measured on wafer prior to packaging2 Scaled from PCM data3 Pulse Width = 40 μS Duty Cycle = 5 4 PSAT is defined as IG = 10 mA peak5 Measured in CGH25120F-TB6 Equivalent 80216e WiMAX signal 10 MHz Bandwidth PAR = 96 dB 001 Probability on CCDF7 Measured over 10 MHz bandwidth at 10 MHz offset from carrier edge8 Includes package and internal matching components

3 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Performance

Gain and Input Return Loss vs Frequency of CGH25120F in Broadband Amplifier Circuit VDD = 28 V IDQ = 05 A

Typical Mobile WiMAX Digital Pre-Distortion (DPD) Performance

WiMAX Characteristics with and without DPD Correction ACLR and Drain Efficiency vs Output Power

of the CGH25120F measured in CGH25120F-TB Amplifier CircuitVDS = 28 V IDS = 05 A Frequency = 25 GHz

-10

-5

0

12

15

18

Ret

urn

Loss

(dB

)

Line

arG

ain

(dB

)Sparameters of CGH25120F

-30

-25

-20

-15

0

3

6

9

20 21 22 23 24 25 26 27 28 29 30

Ret

urn

Loss

(dB

)

Line

arG

ain

(dB

)

Frequency (GHz)

Gain

Return Loss

30

35

40

45

50

-40

-35

-30

-25

-20

Dra

inEf

ficie

ncy

()

AC

LR(d

Bc)

CGH25120F WiMAX Transfer with and without DPD correctionVds = 28V Ids = 500 mA Frequency = 25 GHz

UnCorrected -ACLR UnCorrected +ACLR

Corrected -ACLR Corrected +ACLR

UnCorrected Eff Corrected Eff

0

5

10

15

20

25

-70

-65

-60

-55

-50

-45

15 20 25 30 35 40 45

Dra

inEf

ficie

ncy

()

AC

LR(d

Bc)

Output Power (dBm)

4 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Pulse Performance

Typical Pulse Characteristics Output Power Drain Efficiency and Gain vs Input Power of the CGH25120F measured in CGH25120F-TB Amplifier Circuit

VDS = 28 V IDS = 05 A Freq = 25 GHz Pulse Width = 40 μS Duty Cycle = 5

Typical Pulsed Saturated Power vs Frequencyof the CGH25120F measured in CGH25120F-TB Amplifier Circuit

VDS = 28 V IDS = 05 A PSAT = 10 mA IGS Peak Pulse Width = 40 μS Duty Cycle = 5

72

76

80

51

52

53

Dra

inEf

ficie

ncy

()

Satu

rate

dO

utpu

tPow

er(d

Bm

)

CGH25120 Pulsed Saturated Output Power vs Frequency

Psat

Drain Efficiency

56

60

64

68

47

48

49

50

21 22 23 24 25 26 27 28 29

Dra

inEf

ficie

ncy

()

Satu

rate

dO

utpu

tPow

er(d

Bm

)

Frequency (GHz)

14

15

16

17

18

40

50

60

70

80

Gai

n(d

B)

Out

putP

ower

(dB

m)

Dra

inEf

iicie

ncy(

)

Output Power

Drain Efficiency

Gain

10

11

12

13

14

0

10

20

30

40

0 5 10 15 20 25 30 35 40

Gai

n(d

B)

Out

putP

ower

(dB

m)

Dra

inEf

iicie

ncy(

)

Input Power (dBm)

Gain

Efficiency

Output Power

5 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Performance

Simulated Maximum Available Gain and K Factor of the CGH25120FVDD = 28 V IDQ = 500 mA

Typical Noise Performance

Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH25120FVDD = 28 V IDQ = 500 mA

Electrostatic Discharge (ESD) Classifications

Parameter Symbol Class Test Methodology

Human Body Model HBM 1A (gt 250 V) JEDEC JESD22 A114-D

Charge Device Model CDM II (200 lt 500 V) JEDEC JESD22 C101-C

Min

imum

Noi

se F

igur

e (d

B)

Noi

se R

esis

tanc

e (O

hms)

MA

G (d

B)

K F

acto

r

6 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Source and Load Impedances

Frequency (MHz) Z Source Z Load

2300 680 - j1219 438 - j142

2350 642 - j1189 439 - j136

2400 605 - j1161 439 - j133

2450 571 - j1134 436 - j132

2500 537 - j1108 431 - j133

2550 504 - j1083 423 - j134

2600 471 - j1057 411 - j136

2650 439 - j1031 398 - j137

2700 407 - j1004 380 - j136

Note1 VDD = 28V IDQ = 500mA In the 440162 packageNote2 Impedances are extracted from CGH25120F-TB demonstration circuit and are not source and load pull data derived from transistor

CGH25120F Power Dissipation De-rating Curve

Note 1 Area exceeds Maximum Case Operating Temperature (See Page 2)

D

Z Source Z Load

G

S

40

50

60

70

Pow

erD

issi

patio

n(W

)

CGH25120F Average Power Dissipation De-rating Curve

0

10

20

30

40

0 25 50 75 100 125 150 175 200 225 250

Pow

erD

issi

patio

n(W

)

Maximum Case Temperature (degC)

Note 1

7 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

CGH25120F-TB Demonstration Amplifier Circuit Bill of Materials

Designator Description Qty

R1 RES 116 W 0603 1 150 OHMS 1

R2 RES 116 W 0603 1 51 OHMS 1

C1 CAP 68 pF +-025 pF 0603 ATC600S 1

C2 CAP 27 pF +-5 0603 ATC600S 1

C3C9C15 CAP 82 pF +-025 pF 0603 ATC600S 3

C4C10 CAP 820 pF +-5 0603 ATC600S 2

C5C11 CAP 470 pF 5 100V 0603 X7R 2

C6C12C16 CAP 33000 pF 0805 100V X7R 3

C7 CAP 10 UF 16V TANTALUM 1

C8 CAP 24 pF +-5 0603 ATC600S 1

C13C17 CAP 10 UF 100V 10 X7R 1210 2

C14 CAP 100 UF +-20 160V ELECTROLYTIC 1

J1J2 CONN N-Type Female 0500 SMA Flange 2

J3 CONN Header RTgt PLZ 01 CEN LK 9 POS 1

- PCB RO4350 Er = 348 h = 20 mil 1

- CGH25120F 1

CGH25120F-TB Demonstration Amplifier Circuit

8 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

CGH25120F-TB Demonstration Amplifier Circuit Schematic

CGH25120F-TB Demonstration Amplifier Circuit Outline

9 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Package S-Parameters for CGH25120(Small Signal VDS = 28 V IDQ = 500 mA angle in degrees)

Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22

500 MHz 0970 17955 323 6519 0006 -1955 0697 -17185

600 MHz 0969 17804 271 5973 0006 -2392 0712 -17111

700 MHz 0969 17668 235 5443 0006 -2813 0728 -17054

800 MHz 0968 17539 208 4924 0006 -3220 0744 -17015

900 MHz 0967 17412 188 4413 0006 -3617 0760 -16990

10 GHz 0965 17286 173 3907 0006 -4007 0776 -16980

11 GHz 0963 17157 162 3402 0007 -4393 0792 -16982

12 GHz 0961 17024 153 2894 0007 -4779 0808 -16993

13 GHz 0957 16886 147 2378 0007 -5171 0823 -17013

14 GHz 0953 16739 143 1847 0007 -5572 0838 -17041

15 GHz 0948 16584 141 1295 0007 -5992 0853 -17074

16 GHz 0941 16419 140 711 0008 -6438 0868 -17114

17 GHz 0932 16242 141 085 0008 -6921 0882 -17161

18 GHz 0921 16054 144 -598 0009 -7456 0897 -17216

19 GHz 0906 15855 149 -1354 0009 -8057 0912 -17282

20 GHz 0887 15651 154 -2202 0010 -8743 0928 -17362

21 GHz 0863 15451 161 -3162 0011 -9534 0943 -17461

22 GHz 0836 15272 168 -4248 0012 -10443 0956 -17583

23 GHz 0807 15132 173 -5461 0012 -11471 0966 -17727

24 GHz 0782 15041 176 -6778 0013 -12592 0970 -17885

25 GHz 0767 14970 174 -8150 0013 -13758 0968 17958

26 GHz 0765 14857 169 -9515 0013 -14905 0960 17822

27 GHz 0772 14634 161 -10822 0012 -15982 0948 17717

28 GHz 0784 14257 152 -12049 0012 -16967 0937 17641

29 GHz 0795 13700 143 -13207 0012 -17868 0926 17588

30 GHz 0802 12935 137 -14326 0011 17284 0918 17548

32 GHz 0800 10538 129 -16646 0011 15552 0907 17480

34 GHz 0786 6235 125 16488 0011 13338 0901 17402

36 GHz 0824 -268 108 12815 0010 10376 0897 17296

38 GHz 0913 -6131 073 9346 0007 7668 0890 17172

40 GHz 0963 -9670 045 6963 0005 6078 0881 17041

42 GHz 0983 -11699 029 5387 0003 5302 0872 16893

44 GHz 0992 -12953 019 4245 0002 4941 0860 16719

46 GHz 0995 -13794 014 3327 0002 4762 0844 16511

48 GHz 0997 -14397 010 2519 0002 4636 0823 16261

50 GHz 0998 -14850 008 1750 0001 4482 0793 15954

52 GHz 0999 -15204 007 961 0001 4241 0751 15574

54 GHz 0999 -15490 006 093 0001 3857 0688 15096

56 GHz 0999 -15726 005 -920 0001 3267 0594 14502

58 GHz 0999 -15926 004 -2162 0001 2398 0453 13833

60 GHz 1000 -16097 004 -3699 0001 1187 0251 13618

Download this s-parameter file in ldquos2prdquo format at httpwwwcreecomproductswireless_s-parametersasp

10 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Product Dimensions CGH25120F (Package Type mdash 440162)

11 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Disclaimer

Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet

to be accurate and reliable However no responsibility is assumed by Cree for any infringement of patents or other

rights of third parties which may result from its use No license is granted by implication or otherwise under any patent

or patent rights of Cree Cree makes no warranty representation or guarantee regarding the suitability of its products

for any particular purpose ldquoTypicalrdquo parameters are the average values expected by Cree in large quantities and are

provided for information purposes only These values can and do vary in different applications and actual performance

can vary over time All operating parameters should be validated by customerrsquos technical experts for each application

Cree products are not designed intended or authorized for use as components in applications intended for surgical

implant into the body or to support or sustain life in applications in which the failure of the Cree product could result

in personal injury or death or in applications for planning construction maintenance or direct operation of a nuclear

facility

For more information please contact

Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomrf

Sarah MillerMarketing amp ExportCree RF Components19194075302

Ryan BakerMarketingCree RF Components19194077816

Tom DekkerSales DirectorCree RF Components19194075639

Page 2: CGH25120F

2 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature

Parameter Symbol Rating Units Units

Drain-Source Voltage VDSS 84 Volts 25˚C

Gate-to-Source Voltage VGS -10 +2 Volts 25˚C

Storage Temperature TSTG -65 +150 ˚C

Operating Junction Temperature TJ 225 ˚C

Maximum Forward Gate Current IGMAX 30 mA 25˚C

Maximum Drain Current1 IDMAX 12 A 25˚C

Soldering Temperature2 TS 245 ˚C

Screw Torque τ 80 in-oz

Thermal Resistance Junction to Case3 RθJC 15 ˚CW 85˚C

Case Operating Temperature3 TC -40 +150 ˚C 30 seconds

Note1 Current limit for long term reliable operation2 Refer to the Application Note on soldering at wwwcreecomproductswireless_appnotesasp3 Measured for the CGH25120F at PDISS = 56 W

Electrical Characteristics (TC = 25˚C)

Characteristics Symbol Min Typ Max Units Conditions

DC Characteristics1

Gate Threshold Voltage VGS(th) -38 -30 -23 VDC VDS = 10 V ID = 288 mA

Gate Quiescent Voltage VGS(Q) ndash -27 ndash VDC VDS = 28 V ID = 05 A

Saturated Drain Current2 IDS 232 280 ndash A VDS = 60 V VGS = 20 V

Drain-Source Breakdown Voltage VBR 120 ndash ndash VDC VGS = -8 V ID = 288 mA

RF Characteristics (TC = 25˚C F0 = 25 GHz unless otherwise noted)

Saturated Output Power345 PSAT ndash 130 ndash W VDD = 28 V IDQ = 05 A

Pulsed Drain Efficiency35 η ndash 60 ndash VDD = 28 V IDQ = 05 A POUT = PSAT

Gain6 G 105 125 ndash dB VDD = 28 V IDQ = 05 A POUT = 43 dBm

WiMAX Linearity67 ACLR ndash -31 -27 dBc VDD = 28 V IDQ = 05 A POUT = 43 dBm

Drain Efficiency6 η 27 32 ndash VDD = 28 V IDQ = 05 A POUT = 43 dBm

Output Mismatch Stress VSWR ndash ndash 10 1 YNo damage at all phase angles VDD = 28 V IDQ = 10 A POUT = 20 W CW

Dynamic Characteristics

Input Capacitance8 CGS ndash 88 ndash pF VDS = 28 V Vgs = -8 V f = 1 MHz

Output Capacitance8 CDS ndash 12 ndash pF VDS = 28 V Vgs = -8 V f = 1 MHz

Feedback Capacitance CGD ndash 16 ndash pF VDS = 28 V Vgs = -8 V f = 1 MHz

Notes1 Measured on wafer prior to packaging2 Scaled from PCM data3 Pulse Width = 40 μS Duty Cycle = 5 4 PSAT is defined as IG = 10 mA peak5 Measured in CGH25120F-TB6 Equivalent 80216e WiMAX signal 10 MHz Bandwidth PAR = 96 dB 001 Probability on CCDF7 Measured over 10 MHz bandwidth at 10 MHz offset from carrier edge8 Includes package and internal matching components

3 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Performance

Gain and Input Return Loss vs Frequency of CGH25120F in Broadband Amplifier Circuit VDD = 28 V IDQ = 05 A

Typical Mobile WiMAX Digital Pre-Distortion (DPD) Performance

WiMAX Characteristics with and without DPD Correction ACLR and Drain Efficiency vs Output Power

of the CGH25120F measured in CGH25120F-TB Amplifier CircuitVDS = 28 V IDS = 05 A Frequency = 25 GHz

-10

-5

0

12

15

18

Ret

urn

Loss

(dB

)

Line

arG

ain

(dB

)Sparameters of CGH25120F

-30

-25

-20

-15

0

3

6

9

20 21 22 23 24 25 26 27 28 29 30

Ret

urn

Loss

(dB

)

Line

arG

ain

(dB

)

Frequency (GHz)

Gain

Return Loss

30

35

40

45

50

-40

-35

-30

-25

-20

Dra

inEf

ficie

ncy

()

AC

LR(d

Bc)

CGH25120F WiMAX Transfer with and without DPD correctionVds = 28V Ids = 500 mA Frequency = 25 GHz

UnCorrected -ACLR UnCorrected +ACLR

Corrected -ACLR Corrected +ACLR

UnCorrected Eff Corrected Eff

0

5

10

15

20

25

-70

-65

-60

-55

-50

-45

15 20 25 30 35 40 45

Dra

inEf

ficie

ncy

()

AC

LR(d

Bc)

Output Power (dBm)

4 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Pulse Performance

Typical Pulse Characteristics Output Power Drain Efficiency and Gain vs Input Power of the CGH25120F measured in CGH25120F-TB Amplifier Circuit

VDS = 28 V IDS = 05 A Freq = 25 GHz Pulse Width = 40 μS Duty Cycle = 5

Typical Pulsed Saturated Power vs Frequencyof the CGH25120F measured in CGH25120F-TB Amplifier Circuit

VDS = 28 V IDS = 05 A PSAT = 10 mA IGS Peak Pulse Width = 40 μS Duty Cycle = 5

72

76

80

51

52

53

Dra

inEf

ficie

ncy

()

Satu

rate

dO

utpu

tPow

er(d

Bm

)

CGH25120 Pulsed Saturated Output Power vs Frequency

Psat

Drain Efficiency

56

60

64

68

47

48

49

50

21 22 23 24 25 26 27 28 29

Dra

inEf

ficie

ncy

()

Satu

rate

dO

utpu

tPow

er(d

Bm

)

Frequency (GHz)

14

15

16

17

18

40

50

60

70

80

Gai

n(d

B)

Out

putP

ower

(dB

m)

Dra

inEf

iicie

ncy(

)

Output Power

Drain Efficiency

Gain

10

11

12

13

14

0

10

20

30

40

0 5 10 15 20 25 30 35 40

Gai

n(d

B)

Out

putP

ower

(dB

m)

Dra

inEf

iicie

ncy(

)

Input Power (dBm)

Gain

Efficiency

Output Power

5 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Performance

Simulated Maximum Available Gain and K Factor of the CGH25120FVDD = 28 V IDQ = 500 mA

Typical Noise Performance

Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH25120FVDD = 28 V IDQ = 500 mA

Electrostatic Discharge (ESD) Classifications

Parameter Symbol Class Test Methodology

Human Body Model HBM 1A (gt 250 V) JEDEC JESD22 A114-D

Charge Device Model CDM II (200 lt 500 V) JEDEC JESD22 C101-C

Min

imum

Noi

se F

igur

e (d

B)

Noi

se R

esis

tanc

e (O

hms)

MA

G (d

B)

K F

acto

r

6 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Source and Load Impedances

Frequency (MHz) Z Source Z Load

2300 680 - j1219 438 - j142

2350 642 - j1189 439 - j136

2400 605 - j1161 439 - j133

2450 571 - j1134 436 - j132

2500 537 - j1108 431 - j133

2550 504 - j1083 423 - j134

2600 471 - j1057 411 - j136

2650 439 - j1031 398 - j137

2700 407 - j1004 380 - j136

Note1 VDD = 28V IDQ = 500mA In the 440162 packageNote2 Impedances are extracted from CGH25120F-TB demonstration circuit and are not source and load pull data derived from transistor

CGH25120F Power Dissipation De-rating Curve

Note 1 Area exceeds Maximum Case Operating Temperature (See Page 2)

D

Z Source Z Load

G

S

40

50

60

70

Pow

erD

issi

patio

n(W

)

CGH25120F Average Power Dissipation De-rating Curve

0

10

20

30

40

0 25 50 75 100 125 150 175 200 225 250

Pow

erD

issi

patio

n(W

)

Maximum Case Temperature (degC)

Note 1

7 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

CGH25120F-TB Demonstration Amplifier Circuit Bill of Materials

Designator Description Qty

R1 RES 116 W 0603 1 150 OHMS 1

R2 RES 116 W 0603 1 51 OHMS 1

C1 CAP 68 pF +-025 pF 0603 ATC600S 1

C2 CAP 27 pF +-5 0603 ATC600S 1

C3C9C15 CAP 82 pF +-025 pF 0603 ATC600S 3

C4C10 CAP 820 pF +-5 0603 ATC600S 2

C5C11 CAP 470 pF 5 100V 0603 X7R 2

C6C12C16 CAP 33000 pF 0805 100V X7R 3

C7 CAP 10 UF 16V TANTALUM 1

C8 CAP 24 pF +-5 0603 ATC600S 1

C13C17 CAP 10 UF 100V 10 X7R 1210 2

C14 CAP 100 UF +-20 160V ELECTROLYTIC 1

J1J2 CONN N-Type Female 0500 SMA Flange 2

J3 CONN Header RTgt PLZ 01 CEN LK 9 POS 1

- PCB RO4350 Er = 348 h = 20 mil 1

- CGH25120F 1

CGH25120F-TB Demonstration Amplifier Circuit

8 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

CGH25120F-TB Demonstration Amplifier Circuit Schematic

CGH25120F-TB Demonstration Amplifier Circuit Outline

9 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Package S-Parameters for CGH25120(Small Signal VDS = 28 V IDQ = 500 mA angle in degrees)

Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22

500 MHz 0970 17955 323 6519 0006 -1955 0697 -17185

600 MHz 0969 17804 271 5973 0006 -2392 0712 -17111

700 MHz 0969 17668 235 5443 0006 -2813 0728 -17054

800 MHz 0968 17539 208 4924 0006 -3220 0744 -17015

900 MHz 0967 17412 188 4413 0006 -3617 0760 -16990

10 GHz 0965 17286 173 3907 0006 -4007 0776 -16980

11 GHz 0963 17157 162 3402 0007 -4393 0792 -16982

12 GHz 0961 17024 153 2894 0007 -4779 0808 -16993

13 GHz 0957 16886 147 2378 0007 -5171 0823 -17013

14 GHz 0953 16739 143 1847 0007 -5572 0838 -17041

15 GHz 0948 16584 141 1295 0007 -5992 0853 -17074

16 GHz 0941 16419 140 711 0008 -6438 0868 -17114

17 GHz 0932 16242 141 085 0008 -6921 0882 -17161

18 GHz 0921 16054 144 -598 0009 -7456 0897 -17216

19 GHz 0906 15855 149 -1354 0009 -8057 0912 -17282

20 GHz 0887 15651 154 -2202 0010 -8743 0928 -17362

21 GHz 0863 15451 161 -3162 0011 -9534 0943 -17461

22 GHz 0836 15272 168 -4248 0012 -10443 0956 -17583

23 GHz 0807 15132 173 -5461 0012 -11471 0966 -17727

24 GHz 0782 15041 176 -6778 0013 -12592 0970 -17885

25 GHz 0767 14970 174 -8150 0013 -13758 0968 17958

26 GHz 0765 14857 169 -9515 0013 -14905 0960 17822

27 GHz 0772 14634 161 -10822 0012 -15982 0948 17717

28 GHz 0784 14257 152 -12049 0012 -16967 0937 17641

29 GHz 0795 13700 143 -13207 0012 -17868 0926 17588

30 GHz 0802 12935 137 -14326 0011 17284 0918 17548

32 GHz 0800 10538 129 -16646 0011 15552 0907 17480

34 GHz 0786 6235 125 16488 0011 13338 0901 17402

36 GHz 0824 -268 108 12815 0010 10376 0897 17296

38 GHz 0913 -6131 073 9346 0007 7668 0890 17172

40 GHz 0963 -9670 045 6963 0005 6078 0881 17041

42 GHz 0983 -11699 029 5387 0003 5302 0872 16893

44 GHz 0992 -12953 019 4245 0002 4941 0860 16719

46 GHz 0995 -13794 014 3327 0002 4762 0844 16511

48 GHz 0997 -14397 010 2519 0002 4636 0823 16261

50 GHz 0998 -14850 008 1750 0001 4482 0793 15954

52 GHz 0999 -15204 007 961 0001 4241 0751 15574

54 GHz 0999 -15490 006 093 0001 3857 0688 15096

56 GHz 0999 -15726 005 -920 0001 3267 0594 14502

58 GHz 0999 -15926 004 -2162 0001 2398 0453 13833

60 GHz 1000 -16097 004 -3699 0001 1187 0251 13618

Download this s-parameter file in ldquos2prdquo format at httpwwwcreecomproductswireless_s-parametersasp

10 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Product Dimensions CGH25120F (Package Type mdash 440162)

11 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Disclaimer

Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet

to be accurate and reliable However no responsibility is assumed by Cree for any infringement of patents or other

rights of third parties which may result from its use No license is granted by implication or otherwise under any patent

or patent rights of Cree Cree makes no warranty representation or guarantee regarding the suitability of its products

for any particular purpose ldquoTypicalrdquo parameters are the average values expected by Cree in large quantities and are

provided for information purposes only These values can and do vary in different applications and actual performance

can vary over time All operating parameters should be validated by customerrsquos technical experts for each application

Cree products are not designed intended or authorized for use as components in applications intended for surgical

implant into the body or to support or sustain life in applications in which the failure of the Cree product could result

in personal injury or death or in applications for planning construction maintenance or direct operation of a nuclear

facility

For more information please contact

Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomrf

Sarah MillerMarketing amp ExportCree RF Components19194075302

Ryan BakerMarketingCree RF Components19194077816

Tom DekkerSales DirectorCree RF Components19194075639

Page 3: CGH25120F

3 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Performance

Gain and Input Return Loss vs Frequency of CGH25120F in Broadband Amplifier Circuit VDD = 28 V IDQ = 05 A

Typical Mobile WiMAX Digital Pre-Distortion (DPD) Performance

WiMAX Characteristics with and without DPD Correction ACLR and Drain Efficiency vs Output Power

of the CGH25120F measured in CGH25120F-TB Amplifier CircuitVDS = 28 V IDS = 05 A Frequency = 25 GHz

-10

-5

0

12

15

18

Ret

urn

Loss

(dB

)

Line

arG

ain

(dB

)Sparameters of CGH25120F

-30

-25

-20

-15

0

3

6

9

20 21 22 23 24 25 26 27 28 29 30

Ret

urn

Loss

(dB

)

Line

arG

ain

(dB

)

Frequency (GHz)

Gain

Return Loss

30

35

40

45

50

-40

-35

-30

-25

-20

Dra

inEf

ficie

ncy

()

AC

LR(d

Bc)

CGH25120F WiMAX Transfer with and without DPD correctionVds = 28V Ids = 500 mA Frequency = 25 GHz

UnCorrected -ACLR UnCorrected +ACLR

Corrected -ACLR Corrected +ACLR

UnCorrected Eff Corrected Eff

0

5

10

15

20

25

-70

-65

-60

-55

-50

-45

15 20 25 30 35 40 45

Dra

inEf

ficie

ncy

()

AC

LR(d

Bc)

Output Power (dBm)

4 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Pulse Performance

Typical Pulse Characteristics Output Power Drain Efficiency and Gain vs Input Power of the CGH25120F measured in CGH25120F-TB Amplifier Circuit

VDS = 28 V IDS = 05 A Freq = 25 GHz Pulse Width = 40 μS Duty Cycle = 5

Typical Pulsed Saturated Power vs Frequencyof the CGH25120F measured in CGH25120F-TB Amplifier Circuit

VDS = 28 V IDS = 05 A PSAT = 10 mA IGS Peak Pulse Width = 40 μS Duty Cycle = 5

72

76

80

51

52

53

Dra

inEf

ficie

ncy

()

Satu

rate

dO

utpu

tPow

er(d

Bm

)

CGH25120 Pulsed Saturated Output Power vs Frequency

Psat

Drain Efficiency

56

60

64

68

47

48

49

50

21 22 23 24 25 26 27 28 29

Dra

inEf

ficie

ncy

()

Satu

rate

dO

utpu

tPow

er(d

Bm

)

Frequency (GHz)

14

15

16

17

18

40

50

60

70

80

Gai

n(d

B)

Out

putP

ower

(dB

m)

Dra

inEf

iicie

ncy(

)

Output Power

Drain Efficiency

Gain

10

11

12

13

14

0

10

20

30

40

0 5 10 15 20 25 30 35 40

Gai

n(d

B)

Out

putP

ower

(dB

m)

Dra

inEf

iicie

ncy(

)

Input Power (dBm)

Gain

Efficiency

Output Power

5 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Performance

Simulated Maximum Available Gain and K Factor of the CGH25120FVDD = 28 V IDQ = 500 mA

Typical Noise Performance

Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH25120FVDD = 28 V IDQ = 500 mA

Electrostatic Discharge (ESD) Classifications

Parameter Symbol Class Test Methodology

Human Body Model HBM 1A (gt 250 V) JEDEC JESD22 A114-D

Charge Device Model CDM II (200 lt 500 V) JEDEC JESD22 C101-C

Min

imum

Noi

se F

igur

e (d

B)

Noi

se R

esis

tanc

e (O

hms)

MA

G (d

B)

K F

acto

r

6 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Source and Load Impedances

Frequency (MHz) Z Source Z Load

2300 680 - j1219 438 - j142

2350 642 - j1189 439 - j136

2400 605 - j1161 439 - j133

2450 571 - j1134 436 - j132

2500 537 - j1108 431 - j133

2550 504 - j1083 423 - j134

2600 471 - j1057 411 - j136

2650 439 - j1031 398 - j137

2700 407 - j1004 380 - j136

Note1 VDD = 28V IDQ = 500mA In the 440162 packageNote2 Impedances are extracted from CGH25120F-TB demonstration circuit and are not source and load pull data derived from transistor

CGH25120F Power Dissipation De-rating Curve

Note 1 Area exceeds Maximum Case Operating Temperature (See Page 2)

D

Z Source Z Load

G

S

40

50

60

70

Pow

erD

issi

patio

n(W

)

CGH25120F Average Power Dissipation De-rating Curve

0

10

20

30

40

0 25 50 75 100 125 150 175 200 225 250

Pow

erD

issi

patio

n(W

)

Maximum Case Temperature (degC)

Note 1

7 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

CGH25120F-TB Demonstration Amplifier Circuit Bill of Materials

Designator Description Qty

R1 RES 116 W 0603 1 150 OHMS 1

R2 RES 116 W 0603 1 51 OHMS 1

C1 CAP 68 pF +-025 pF 0603 ATC600S 1

C2 CAP 27 pF +-5 0603 ATC600S 1

C3C9C15 CAP 82 pF +-025 pF 0603 ATC600S 3

C4C10 CAP 820 pF +-5 0603 ATC600S 2

C5C11 CAP 470 pF 5 100V 0603 X7R 2

C6C12C16 CAP 33000 pF 0805 100V X7R 3

C7 CAP 10 UF 16V TANTALUM 1

C8 CAP 24 pF +-5 0603 ATC600S 1

C13C17 CAP 10 UF 100V 10 X7R 1210 2

C14 CAP 100 UF +-20 160V ELECTROLYTIC 1

J1J2 CONN N-Type Female 0500 SMA Flange 2

J3 CONN Header RTgt PLZ 01 CEN LK 9 POS 1

- PCB RO4350 Er = 348 h = 20 mil 1

- CGH25120F 1

CGH25120F-TB Demonstration Amplifier Circuit

8 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

CGH25120F-TB Demonstration Amplifier Circuit Schematic

CGH25120F-TB Demonstration Amplifier Circuit Outline

9 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Package S-Parameters for CGH25120(Small Signal VDS = 28 V IDQ = 500 mA angle in degrees)

Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22

500 MHz 0970 17955 323 6519 0006 -1955 0697 -17185

600 MHz 0969 17804 271 5973 0006 -2392 0712 -17111

700 MHz 0969 17668 235 5443 0006 -2813 0728 -17054

800 MHz 0968 17539 208 4924 0006 -3220 0744 -17015

900 MHz 0967 17412 188 4413 0006 -3617 0760 -16990

10 GHz 0965 17286 173 3907 0006 -4007 0776 -16980

11 GHz 0963 17157 162 3402 0007 -4393 0792 -16982

12 GHz 0961 17024 153 2894 0007 -4779 0808 -16993

13 GHz 0957 16886 147 2378 0007 -5171 0823 -17013

14 GHz 0953 16739 143 1847 0007 -5572 0838 -17041

15 GHz 0948 16584 141 1295 0007 -5992 0853 -17074

16 GHz 0941 16419 140 711 0008 -6438 0868 -17114

17 GHz 0932 16242 141 085 0008 -6921 0882 -17161

18 GHz 0921 16054 144 -598 0009 -7456 0897 -17216

19 GHz 0906 15855 149 -1354 0009 -8057 0912 -17282

20 GHz 0887 15651 154 -2202 0010 -8743 0928 -17362

21 GHz 0863 15451 161 -3162 0011 -9534 0943 -17461

22 GHz 0836 15272 168 -4248 0012 -10443 0956 -17583

23 GHz 0807 15132 173 -5461 0012 -11471 0966 -17727

24 GHz 0782 15041 176 -6778 0013 -12592 0970 -17885

25 GHz 0767 14970 174 -8150 0013 -13758 0968 17958

26 GHz 0765 14857 169 -9515 0013 -14905 0960 17822

27 GHz 0772 14634 161 -10822 0012 -15982 0948 17717

28 GHz 0784 14257 152 -12049 0012 -16967 0937 17641

29 GHz 0795 13700 143 -13207 0012 -17868 0926 17588

30 GHz 0802 12935 137 -14326 0011 17284 0918 17548

32 GHz 0800 10538 129 -16646 0011 15552 0907 17480

34 GHz 0786 6235 125 16488 0011 13338 0901 17402

36 GHz 0824 -268 108 12815 0010 10376 0897 17296

38 GHz 0913 -6131 073 9346 0007 7668 0890 17172

40 GHz 0963 -9670 045 6963 0005 6078 0881 17041

42 GHz 0983 -11699 029 5387 0003 5302 0872 16893

44 GHz 0992 -12953 019 4245 0002 4941 0860 16719

46 GHz 0995 -13794 014 3327 0002 4762 0844 16511

48 GHz 0997 -14397 010 2519 0002 4636 0823 16261

50 GHz 0998 -14850 008 1750 0001 4482 0793 15954

52 GHz 0999 -15204 007 961 0001 4241 0751 15574

54 GHz 0999 -15490 006 093 0001 3857 0688 15096

56 GHz 0999 -15726 005 -920 0001 3267 0594 14502

58 GHz 0999 -15926 004 -2162 0001 2398 0453 13833

60 GHz 1000 -16097 004 -3699 0001 1187 0251 13618

Download this s-parameter file in ldquos2prdquo format at httpwwwcreecomproductswireless_s-parametersasp

10 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Product Dimensions CGH25120F (Package Type mdash 440162)

11 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Disclaimer

Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet

to be accurate and reliable However no responsibility is assumed by Cree for any infringement of patents or other

rights of third parties which may result from its use No license is granted by implication or otherwise under any patent

or patent rights of Cree Cree makes no warranty representation or guarantee regarding the suitability of its products

for any particular purpose ldquoTypicalrdquo parameters are the average values expected by Cree in large quantities and are

provided for information purposes only These values can and do vary in different applications and actual performance

can vary over time All operating parameters should be validated by customerrsquos technical experts for each application

Cree products are not designed intended or authorized for use as components in applications intended for surgical

implant into the body or to support or sustain life in applications in which the failure of the Cree product could result

in personal injury or death or in applications for planning construction maintenance or direct operation of a nuclear

facility

For more information please contact

Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomrf

Sarah MillerMarketing amp ExportCree RF Components19194075302

Ryan BakerMarketingCree RF Components19194077816

Tom DekkerSales DirectorCree RF Components19194075639

Page 4: CGH25120F

4 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Pulse Performance

Typical Pulse Characteristics Output Power Drain Efficiency and Gain vs Input Power of the CGH25120F measured in CGH25120F-TB Amplifier Circuit

VDS = 28 V IDS = 05 A Freq = 25 GHz Pulse Width = 40 μS Duty Cycle = 5

Typical Pulsed Saturated Power vs Frequencyof the CGH25120F measured in CGH25120F-TB Amplifier Circuit

VDS = 28 V IDS = 05 A PSAT = 10 mA IGS Peak Pulse Width = 40 μS Duty Cycle = 5

72

76

80

51

52

53

Dra

inEf

ficie

ncy

()

Satu

rate

dO

utpu

tPow

er(d

Bm

)

CGH25120 Pulsed Saturated Output Power vs Frequency

Psat

Drain Efficiency

56

60

64

68

47

48

49

50

21 22 23 24 25 26 27 28 29

Dra

inEf

ficie

ncy

()

Satu

rate

dO

utpu

tPow

er(d

Bm

)

Frequency (GHz)

14

15

16

17

18

40

50

60

70

80

Gai

n(d

B)

Out

putP

ower

(dB

m)

Dra

inEf

iicie

ncy(

)

Output Power

Drain Efficiency

Gain

10

11

12

13

14

0

10

20

30

40

0 5 10 15 20 25 30 35 40

Gai

n(d

B)

Out

putP

ower

(dB

m)

Dra

inEf

iicie

ncy(

)

Input Power (dBm)

Gain

Efficiency

Output Power

5 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Performance

Simulated Maximum Available Gain and K Factor of the CGH25120FVDD = 28 V IDQ = 500 mA

Typical Noise Performance

Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH25120FVDD = 28 V IDQ = 500 mA

Electrostatic Discharge (ESD) Classifications

Parameter Symbol Class Test Methodology

Human Body Model HBM 1A (gt 250 V) JEDEC JESD22 A114-D

Charge Device Model CDM II (200 lt 500 V) JEDEC JESD22 C101-C

Min

imum

Noi

se F

igur

e (d

B)

Noi

se R

esis

tanc

e (O

hms)

MA

G (d

B)

K F

acto

r

6 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Source and Load Impedances

Frequency (MHz) Z Source Z Load

2300 680 - j1219 438 - j142

2350 642 - j1189 439 - j136

2400 605 - j1161 439 - j133

2450 571 - j1134 436 - j132

2500 537 - j1108 431 - j133

2550 504 - j1083 423 - j134

2600 471 - j1057 411 - j136

2650 439 - j1031 398 - j137

2700 407 - j1004 380 - j136

Note1 VDD = 28V IDQ = 500mA In the 440162 packageNote2 Impedances are extracted from CGH25120F-TB demonstration circuit and are not source and load pull data derived from transistor

CGH25120F Power Dissipation De-rating Curve

Note 1 Area exceeds Maximum Case Operating Temperature (See Page 2)

D

Z Source Z Load

G

S

40

50

60

70

Pow

erD

issi

patio

n(W

)

CGH25120F Average Power Dissipation De-rating Curve

0

10

20

30

40

0 25 50 75 100 125 150 175 200 225 250

Pow

erD

issi

patio

n(W

)

Maximum Case Temperature (degC)

Note 1

7 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

CGH25120F-TB Demonstration Amplifier Circuit Bill of Materials

Designator Description Qty

R1 RES 116 W 0603 1 150 OHMS 1

R2 RES 116 W 0603 1 51 OHMS 1

C1 CAP 68 pF +-025 pF 0603 ATC600S 1

C2 CAP 27 pF +-5 0603 ATC600S 1

C3C9C15 CAP 82 pF +-025 pF 0603 ATC600S 3

C4C10 CAP 820 pF +-5 0603 ATC600S 2

C5C11 CAP 470 pF 5 100V 0603 X7R 2

C6C12C16 CAP 33000 pF 0805 100V X7R 3

C7 CAP 10 UF 16V TANTALUM 1

C8 CAP 24 pF +-5 0603 ATC600S 1

C13C17 CAP 10 UF 100V 10 X7R 1210 2

C14 CAP 100 UF +-20 160V ELECTROLYTIC 1

J1J2 CONN N-Type Female 0500 SMA Flange 2

J3 CONN Header RTgt PLZ 01 CEN LK 9 POS 1

- PCB RO4350 Er = 348 h = 20 mil 1

- CGH25120F 1

CGH25120F-TB Demonstration Amplifier Circuit

8 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

CGH25120F-TB Demonstration Amplifier Circuit Schematic

CGH25120F-TB Demonstration Amplifier Circuit Outline

9 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Package S-Parameters for CGH25120(Small Signal VDS = 28 V IDQ = 500 mA angle in degrees)

Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22

500 MHz 0970 17955 323 6519 0006 -1955 0697 -17185

600 MHz 0969 17804 271 5973 0006 -2392 0712 -17111

700 MHz 0969 17668 235 5443 0006 -2813 0728 -17054

800 MHz 0968 17539 208 4924 0006 -3220 0744 -17015

900 MHz 0967 17412 188 4413 0006 -3617 0760 -16990

10 GHz 0965 17286 173 3907 0006 -4007 0776 -16980

11 GHz 0963 17157 162 3402 0007 -4393 0792 -16982

12 GHz 0961 17024 153 2894 0007 -4779 0808 -16993

13 GHz 0957 16886 147 2378 0007 -5171 0823 -17013

14 GHz 0953 16739 143 1847 0007 -5572 0838 -17041

15 GHz 0948 16584 141 1295 0007 -5992 0853 -17074

16 GHz 0941 16419 140 711 0008 -6438 0868 -17114

17 GHz 0932 16242 141 085 0008 -6921 0882 -17161

18 GHz 0921 16054 144 -598 0009 -7456 0897 -17216

19 GHz 0906 15855 149 -1354 0009 -8057 0912 -17282

20 GHz 0887 15651 154 -2202 0010 -8743 0928 -17362

21 GHz 0863 15451 161 -3162 0011 -9534 0943 -17461

22 GHz 0836 15272 168 -4248 0012 -10443 0956 -17583

23 GHz 0807 15132 173 -5461 0012 -11471 0966 -17727

24 GHz 0782 15041 176 -6778 0013 -12592 0970 -17885

25 GHz 0767 14970 174 -8150 0013 -13758 0968 17958

26 GHz 0765 14857 169 -9515 0013 -14905 0960 17822

27 GHz 0772 14634 161 -10822 0012 -15982 0948 17717

28 GHz 0784 14257 152 -12049 0012 -16967 0937 17641

29 GHz 0795 13700 143 -13207 0012 -17868 0926 17588

30 GHz 0802 12935 137 -14326 0011 17284 0918 17548

32 GHz 0800 10538 129 -16646 0011 15552 0907 17480

34 GHz 0786 6235 125 16488 0011 13338 0901 17402

36 GHz 0824 -268 108 12815 0010 10376 0897 17296

38 GHz 0913 -6131 073 9346 0007 7668 0890 17172

40 GHz 0963 -9670 045 6963 0005 6078 0881 17041

42 GHz 0983 -11699 029 5387 0003 5302 0872 16893

44 GHz 0992 -12953 019 4245 0002 4941 0860 16719

46 GHz 0995 -13794 014 3327 0002 4762 0844 16511

48 GHz 0997 -14397 010 2519 0002 4636 0823 16261

50 GHz 0998 -14850 008 1750 0001 4482 0793 15954

52 GHz 0999 -15204 007 961 0001 4241 0751 15574

54 GHz 0999 -15490 006 093 0001 3857 0688 15096

56 GHz 0999 -15726 005 -920 0001 3267 0594 14502

58 GHz 0999 -15926 004 -2162 0001 2398 0453 13833

60 GHz 1000 -16097 004 -3699 0001 1187 0251 13618

Download this s-parameter file in ldquos2prdquo format at httpwwwcreecomproductswireless_s-parametersasp

10 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Product Dimensions CGH25120F (Package Type mdash 440162)

11 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Disclaimer

Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet

to be accurate and reliable However no responsibility is assumed by Cree for any infringement of patents or other

rights of third parties which may result from its use No license is granted by implication or otherwise under any patent

or patent rights of Cree Cree makes no warranty representation or guarantee regarding the suitability of its products

for any particular purpose ldquoTypicalrdquo parameters are the average values expected by Cree in large quantities and are

provided for information purposes only These values can and do vary in different applications and actual performance

can vary over time All operating parameters should be validated by customerrsquos technical experts for each application

Cree products are not designed intended or authorized for use as components in applications intended for surgical

implant into the body or to support or sustain life in applications in which the failure of the Cree product could result

in personal injury or death or in applications for planning construction maintenance or direct operation of a nuclear

facility

For more information please contact

Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomrf

Sarah MillerMarketing amp ExportCree RF Components19194075302

Ryan BakerMarketingCree RF Components19194077816

Tom DekkerSales DirectorCree RF Components19194075639

Page 5: CGH25120F

5 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Performance

Simulated Maximum Available Gain and K Factor of the CGH25120FVDD = 28 V IDQ = 500 mA

Typical Noise Performance

Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH25120FVDD = 28 V IDQ = 500 mA

Electrostatic Discharge (ESD) Classifications

Parameter Symbol Class Test Methodology

Human Body Model HBM 1A (gt 250 V) JEDEC JESD22 A114-D

Charge Device Model CDM II (200 lt 500 V) JEDEC JESD22 C101-C

Min

imum

Noi

se F

igur

e (d

B)

Noi

se R

esis

tanc

e (O

hms)

MA

G (d

B)

K F

acto

r

6 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Source and Load Impedances

Frequency (MHz) Z Source Z Load

2300 680 - j1219 438 - j142

2350 642 - j1189 439 - j136

2400 605 - j1161 439 - j133

2450 571 - j1134 436 - j132

2500 537 - j1108 431 - j133

2550 504 - j1083 423 - j134

2600 471 - j1057 411 - j136

2650 439 - j1031 398 - j137

2700 407 - j1004 380 - j136

Note1 VDD = 28V IDQ = 500mA In the 440162 packageNote2 Impedances are extracted from CGH25120F-TB demonstration circuit and are not source and load pull data derived from transistor

CGH25120F Power Dissipation De-rating Curve

Note 1 Area exceeds Maximum Case Operating Temperature (See Page 2)

D

Z Source Z Load

G

S

40

50

60

70

Pow

erD

issi

patio

n(W

)

CGH25120F Average Power Dissipation De-rating Curve

0

10

20

30

40

0 25 50 75 100 125 150 175 200 225 250

Pow

erD

issi

patio

n(W

)

Maximum Case Temperature (degC)

Note 1

7 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

CGH25120F-TB Demonstration Amplifier Circuit Bill of Materials

Designator Description Qty

R1 RES 116 W 0603 1 150 OHMS 1

R2 RES 116 W 0603 1 51 OHMS 1

C1 CAP 68 pF +-025 pF 0603 ATC600S 1

C2 CAP 27 pF +-5 0603 ATC600S 1

C3C9C15 CAP 82 pF +-025 pF 0603 ATC600S 3

C4C10 CAP 820 pF +-5 0603 ATC600S 2

C5C11 CAP 470 pF 5 100V 0603 X7R 2

C6C12C16 CAP 33000 pF 0805 100V X7R 3

C7 CAP 10 UF 16V TANTALUM 1

C8 CAP 24 pF +-5 0603 ATC600S 1

C13C17 CAP 10 UF 100V 10 X7R 1210 2

C14 CAP 100 UF +-20 160V ELECTROLYTIC 1

J1J2 CONN N-Type Female 0500 SMA Flange 2

J3 CONN Header RTgt PLZ 01 CEN LK 9 POS 1

- PCB RO4350 Er = 348 h = 20 mil 1

- CGH25120F 1

CGH25120F-TB Demonstration Amplifier Circuit

8 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

CGH25120F-TB Demonstration Amplifier Circuit Schematic

CGH25120F-TB Demonstration Amplifier Circuit Outline

9 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Package S-Parameters for CGH25120(Small Signal VDS = 28 V IDQ = 500 mA angle in degrees)

Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22

500 MHz 0970 17955 323 6519 0006 -1955 0697 -17185

600 MHz 0969 17804 271 5973 0006 -2392 0712 -17111

700 MHz 0969 17668 235 5443 0006 -2813 0728 -17054

800 MHz 0968 17539 208 4924 0006 -3220 0744 -17015

900 MHz 0967 17412 188 4413 0006 -3617 0760 -16990

10 GHz 0965 17286 173 3907 0006 -4007 0776 -16980

11 GHz 0963 17157 162 3402 0007 -4393 0792 -16982

12 GHz 0961 17024 153 2894 0007 -4779 0808 -16993

13 GHz 0957 16886 147 2378 0007 -5171 0823 -17013

14 GHz 0953 16739 143 1847 0007 -5572 0838 -17041

15 GHz 0948 16584 141 1295 0007 -5992 0853 -17074

16 GHz 0941 16419 140 711 0008 -6438 0868 -17114

17 GHz 0932 16242 141 085 0008 -6921 0882 -17161

18 GHz 0921 16054 144 -598 0009 -7456 0897 -17216

19 GHz 0906 15855 149 -1354 0009 -8057 0912 -17282

20 GHz 0887 15651 154 -2202 0010 -8743 0928 -17362

21 GHz 0863 15451 161 -3162 0011 -9534 0943 -17461

22 GHz 0836 15272 168 -4248 0012 -10443 0956 -17583

23 GHz 0807 15132 173 -5461 0012 -11471 0966 -17727

24 GHz 0782 15041 176 -6778 0013 -12592 0970 -17885

25 GHz 0767 14970 174 -8150 0013 -13758 0968 17958

26 GHz 0765 14857 169 -9515 0013 -14905 0960 17822

27 GHz 0772 14634 161 -10822 0012 -15982 0948 17717

28 GHz 0784 14257 152 -12049 0012 -16967 0937 17641

29 GHz 0795 13700 143 -13207 0012 -17868 0926 17588

30 GHz 0802 12935 137 -14326 0011 17284 0918 17548

32 GHz 0800 10538 129 -16646 0011 15552 0907 17480

34 GHz 0786 6235 125 16488 0011 13338 0901 17402

36 GHz 0824 -268 108 12815 0010 10376 0897 17296

38 GHz 0913 -6131 073 9346 0007 7668 0890 17172

40 GHz 0963 -9670 045 6963 0005 6078 0881 17041

42 GHz 0983 -11699 029 5387 0003 5302 0872 16893

44 GHz 0992 -12953 019 4245 0002 4941 0860 16719

46 GHz 0995 -13794 014 3327 0002 4762 0844 16511

48 GHz 0997 -14397 010 2519 0002 4636 0823 16261

50 GHz 0998 -14850 008 1750 0001 4482 0793 15954

52 GHz 0999 -15204 007 961 0001 4241 0751 15574

54 GHz 0999 -15490 006 093 0001 3857 0688 15096

56 GHz 0999 -15726 005 -920 0001 3267 0594 14502

58 GHz 0999 -15926 004 -2162 0001 2398 0453 13833

60 GHz 1000 -16097 004 -3699 0001 1187 0251 13618

Download this s-parameter file in ldquos2prdquo format at httpwwwcreecomproductswireless_s-parametersasp

10 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Product Dimensions CGH25120F (Package Type mdash 440162)

11 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Disclaimer

Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet

to be accurate and reliable However no responsibility is assumed by Cree for any infringement of patents or other

rights of third parties which may result from its use No license is granted by implication or otherwise under any patent

or patent rights of Cree Cree makes no warranty representation or guarantee regarding the suitability of its products

for any particular purpose ldquoTypicalrdquo parameters are the average values expected by Cree in large quantities and are

provided for information purposes only These values can and do vary in different applications and actual performance

can vary over time All operating parameters should be validated by customerrsquos technical experts for each application

Cree products are not designed intended or authorized for use as components in applications intended for surgical

implant into the body or to support or sustain life in applications in which the failure of the Cree product could result

in personal injury or death or in applications for planning construction maintenance or direct operation of a nuclear

facility

For more information please contact

Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomrf

Sarah MillerMarketing amp ExportCree RF Components19194075302

Ryan BakerMarketingCree RF Components19194077816

Tom DekkerSales DirectorCree RF Components19194075639

Page 6: CGH25120F

6 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Source and Load Impedances

Frequency (MHz) Z Source Z Load

2300 680 - j1219 438 - j142

2350 642 - j1189 439 - j136

2400 605 - j1161 439 - j133

2450 571 - j1134 436 - j132

2500 537 - j1108 431 - j133

2550 504 - j1083 423 - j134

2600 471 - j1057 411 - j136

2650 439 - j1031 398 - j137

2700 407 - j1004 380 - j136

Note1 VDD = 28V IDQ = 500mA In the 440162 packageNote2 Impedances are extracted from CGH25120F-TB demonstration circuit and are not source and load pull data derived from transistor

CGH25120F Power Dissipation De-rating Curve

Note 1 Area exceeds Maximum Case Operating Temperature (See Page 2)

D

Z Source Z Load

G

S

40

50

60

70

Pow

erD

issi

patio

n(W

)

CGH25120F Average Power Dissipation De-rating Curve

0

10

20

30

40

0 25 50 75 100 125 150 175 200 225 250

Pow

erD

issi

patio

n(W

)

Maximum Case Temperature (degC)

Note 1

7 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

CGH25120F-TB Demonstration Amplifier Circuit Bill of Materials

Designator Description Qty

R1 RES 116 W 0603 1 150 OHMS 1

R2 RES 116 W 0603 1 51 OHMS 1

C1 CAP 68 pF +-025 pF 0603 ATC600S 1

C2 CAP 27 pF +-5 0603 ATC600S 1

C3C9C15 CAP 82 pF +-025 pF 0603 ATC600S 3

C4C10 CAP 820 pF +-5 0603 ATC600S 2

C5C11 CAP 470 pF 5 100V 0603 X7R 2

C6C12C16 CAP 33000 pF 0805 100V X7R 3

C7 CAP 10 UF 16V TANTALUM 1

C8 CAP 24 pF +-5 0603 ATC600S 1

C13C17 CAP 10 UF 100V 10 X7R 1210 2

C14 CAP 100 UF +-20 160V ELECTROLYTIC 1

J1J2 CONN N-Type Female 0500 SMA Flange 2

J3 CONN Header RTgt PLZ 01 CEN LK 9 POS 1

- PCB RO4350 Er = 348 h = 20 mil 1

- CGH25120F 1

CGH25120F-TB Demonstration Amplifier Circuit

8 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

CGH25120F-TB Demonstration Amplifier Circuit Schematic

CGH25120F-TB Demonstration Amplifier Circuit Outline

9 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Package S-Parameters for CGH25120(Small Signal VDS = 28 V IDQ = 500 mA angle in degrees)

Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22

500 MHz 0970 17955 323 6519 0006 -1955 0697 -17185

600 MHz 0969 17804 271 5973 0006 -2392 0712 -17111

700 MHz 0969 17668 235 5443 0006 -2813 0728 -17054

800 MHz 0968 17539 208 4924 0006 -3220 0744 -17015

900 MHz 0967 17412 188 4413 0006 -3617 0760 -16990

10 GHz 0965 17286 173 3907 0006 -4007 0776 -16980

11 GHz 0963 17157 162 3402 0007 -4393 0792 -16982

12 GHz 0961 17024 153 2894 0007 -4779 0808 -16993

13 GHz 0957 16886 147 2378 0007 -5171 0823 -17013

14 GHz 0953 16739 143 1847 0007 -5572 0838 -17041

15 GHz 0948 16584 141 1295 0007 -5992 0853 -17074

16 GHz 0941 16419 140 711 0008 -6438 0868 -17114

17 GHz 0932 16242 141 085 0008 -6921 0882 -17161

18 GHz 0921 16054 144 -598 0009 -7456 0897 -17216

19 GHz 0906 15855 149 -1354 0009 -8057 0912 -17282

20 GHz 0887 15651 154 -2202 0010 -8743 0928 -17362

21 GHz 0863 15451 161 -3162 0011 -9534 0943 -17461

22 GHz 0836 15272 168 -4248 0012 -10443 0956 -17583

23 GHz 0807 15132 173 -5461 0012 -11471 0966 -17727

24 GHz 0782 15041 176 -6778 0013 -12592 0970 -17885

25 GHz 0767 14970 174 -8150 0013 -13758 0968 17958

26 GHz 0765 14857 169 -9515 0013 -14905 0960 17822

27 GHz 0772 14634 161 -10822 0012 -15982 0948 17717

28 GHz 0784 14257 152 -12049 0012 -16967 0937 17641

29 GHz 0795 13700 143 -13207 0012 -17868 0926 17588

30 GHz 0802 12935 137 -14326 0011 17284 0918 17548

32 GHz 0800 10538 129 -16646 0011 15552 0907 17480

34 GHz 0786 6235 125 16488 0011 13338 0901 17402

36 GHz 0824 -268 108 12815 0010 10376 0897 17296

38 GHz 0913 -6131 073 9346 0007 7668 0890 17172

40 GHz 0963 -9670 045 6963 0005 6078 0881 17041

42 GHz 0983 -11699 029 5387 0003 5302 0872 16893

44 GHz 0992 -12953 019 4245 0002 4941 0860 16719

46 GHz 0995 -13794 014 3327 0002 4762 0844 16511

48 GHz 0997 -14397 010 2519 0002 4636 0823 16261

50 GHz 0998 -14850 008 1750 0001 4482 0793 15954

52 GHz 0999 -15204 007 961 0001 4241 0751 15574

54 GHz 0999 -15490 006 093 0001 3857 0688 15096

56 GHz 0999 -15726 005 -920 0001 3267 0594 14502

58 GHz 0999 -15926 004 -2162 0001 2398 0453 13833

60 GHz 1000 -16097 004 -3699 0001 1187 0251 13618

Download this s-parameter file in ldquos2prdquo format at httpwwwcreecomproductswireless_s-parametersasp

10 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Product Dimensions CGH25120F (Package Type mdash 440162)

11 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Disclaimer

Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet

to be accurate and reliable However no responsibility is assumed by Cree for any infringement of patents or other

rights of third parties which may result from its use No license is granted by implication or otherwise under any patent

or patent rights of Cree Cree makes no warranty representation or guarantee regarding the suitability of its products

for any particular purpose ldquoTypicalrdquo parameters are the average values expected by Cree in large quantities and are

provided for information purposes only These values can and do vary in different applications and actual performance

can vary over time All operating parameters should be validated by customerrsquos technical experts for each application

Cree products are not designed intended or authorized for use as components in applications intended for surgical

implant into the body or to support or sustain life in applications in which the failure of the Cree product could result

in personal injury or death or in applications for planning construction maintenance or direct operation of a nuclear

facility

For more information please contact

Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomrf

Sarah MillerMarketing amp ExportCree RF Components19194075302

Ryan BakerMarketingCree RF Components19194077816

Tom DekkerSales DirectorCree RF Components19194075639

Page 7: CGH25120F

7 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

CGH25120F-TB Demonstration Amplifier Circuit Bill of Materials

Designator Description Qty

R1 RES 116 W 0603 1 150 OHMS 1

R2 RES 116 W 0603 1 51 OHMS 1

C1 CAP 68 pF +-025 pF 0603 ATC600S 1

C2 CAP 27 pF +-5 0603 ATC600S 1

C3C9C15 CAP 82 pF +-025 pF 0603 ATC600S 3

C4C10 CAP 820 pF +-5 0603 ATC600S 2

C5C11 CAP 470 pF 5 100V 0603 X7R 2

C6C12C16 CAP 33000 pF 0805 100V X7R 3

C7 CAP 10 UF 16V TANTALUM 1

C8 CAP 24 pF +-5 0603 ATC600S 1

C13C17 CAP 10 UF 100V 10 X7R 1210 2

C14 CAP 100 UF +-20 160V ELECTROLYTIC 1

J1J2 CONN N-Type Female 0500 SMA Flange 2

J3 CONN Header RTgt PLZ 01 CEN LK 9 POS 1

- PCB RO4350 Er = 348 h = 20 mil 1

- CGH25120F 1

CGH25120F-TB Demonstration Amplifier Circuit

8 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

CGH25120F-TB Demonstration Amplifier Circuit Schematic

CGH25120F-TB Demonstration Amplifier Circuit Outline

9 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Package S-Parameters for CGH25120(Small Signal VDS = 28 V IDQ = 500 mA angle in degrees)

Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22

500 MHz 0970 17955 323 6519 0006 -1955 0697 -17185

600 MHz 0969 17804 271 5973 0006 -2392 0712 -17111

700 MHz 0969 17668 235 5443 0006 -2813 0728 -17054

800 MHz 0968 17539 208 4924 0006 -3220 0744 -17015

900 MHz 0967 17412 188 4413 0006 -3617 0760 -16990

10 GHz 0965 17286 173 3907 0006 -4007 0776 -16980

11 GHz 0963 17157 162 3402 0007 -4393 0792 -16982

12 GHz 0961 17024 153 2894 0007 -4779 0808 -16993

13 GHz 0957 16886 147 2378 0007 -5171 0823 -17013

14 GHz 0953 16739 143 1847 0007 -5572 0838 -17041

15 GHz 0948 16584 141 1295 0007 -5992 0853 -17074

16 GHz 0941 16419 140 711 0008 -6438 0868 -17114

17 GHz 0932 16242 141 085 0008 -6921 0882 -17161

18 GHz 0921 16054 144 -598 0009 -7456 0897 -17216

19 GHz 0906 15855 149 -1354 0009 -8057 0912 -17282

20 GHz 0887 15651 154 -2202 0010 -8743 0928 -17362

21 GHz 0863 15451 161 -3162 0011 -9534 0943 -17461

22 GHz 0836 15272 168 -4248 0012 -10443 0956 -17583

23 GHz 0807 15132 173 -5461 0012 -11471 0966 -17727

24 GHz 0782 15041 176 -6778 0013 -12592 0970 -17885

25 GHz 0767 14970 174 -8150 0013 -13758 0968 17958

26 GHz 0765 14857 169 -9515 0013 -14905 0960 17822

27 GHz 0772 14634 161 -10822 0012 -15982 0948 17717

28 GHz 0784 14257 152 -12049 0012 -16967 0937 17641

29 GHz 0795 13700 143 -13207 0012 -17868 0926 17588

30 GHz 0802 12935 137 -14326 0011 17284 0918 17548

32 GHz 0800 10538 129 -16646 0011 15552 0907 17480

34 GHz 0786 6235 125 16488 0011 13338 0901 17402

36 GHz 0824 -268 108 12815 0010 10376 0897 17296

38 GHz 0913 -6131 073 9346 0007 7668 0890 17172

40 GHz 0963 -9670 045 6963 0005 6078 0881 17041

42 GHz 0983 -11699 029 5387 0003 5302 0872 16893

44 GHz 0992 -12953 019 4245 0002 4941 0860 16719

46 GHz 0995 -13794 014 3327 0002 4762 0844 16511

48 GHz 0997 -14397 010 2519 0002 4636 0823 16261

50 GHz 0998 -14850 008 1750 0001 4482 0793 15954

52 GHz 0999 -15204 007 961 0001 4241 0751 15574

54 GHz 0999 -15490 006 093 0001 3857 0688 15096

56 GHz 0999 -15726 005 -920 0001 3267 0594 14502

58 GHz 0999 -15926 004 -2162 0001 2398 0453 13833

60 GHz 1000 -16097 004 -3699 0001 1187 0251 13618

Download this s-parameter file in ldquos2prdquo format at httpwwwcreecomproductswireless_s-parametersasp

10 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Product Dimensions CGH25120F (Package Type mdash 440162)

11 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Disclaimer

Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet

to be accurate and reliable However no responsibility is assumed by Cree for any infringement of patents or other

rights of third parties which may result from its use No license is granted by implication or otherwise under any patent

or patent rights of Cree Cree makes no warranty representation or guarantee regarding the suitability of its products

for any particular purpose ldquoTypicalrdquo parameters are the average values expected by Cree in large quantities and are

provided for information purposes only These values can and do vary in different applications and actual performance

can vary over time All operating parameters should be validated by customerrsquos technical experts for each application

Cree products are not designed intended or authorized for use as components in applications intended for surgical

implant into the body or to support or sustain life in applications in which the failure of the Cree product could result

in personal injury or death or in applications for planning construction maintenance or direct operation of a nuclear

facility

For more information please contact

Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomrf

Sarah MillerMarketing amp ExportCree RF Components19194075302

Ryan BakerMarketingCree RF Components19194077816

Tom DekkerSales DirectorCree RF Components19194075639

Page 8: CGH25120F

8 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

CGH25120F-TB Demonstration Amplifier Circuit Schematic

CGH25120F-TB Demonstration Amplifier Circuit Outline

9 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Package S-Parameters for CGH25120(Small Signal VDS = 28 V IDQ = 500 mA angle in degrees)

Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22

500 MHz 0970 17955 323 6519 0006 -1955 0697 -17185

600 MHz 0969 17804 271 5973 0006 -2392 0712 -17111

700 MHz 0969 17668 235 5443 0006 -2813 0728 -17054

800 MHz 0968 17539 208 4924 0006 -3220 0744 -17015

900 MHz 0967 17412 188 4413 0006 -3617 0760 -16990

10 GHz 0965 17286 173 3907 0006 -4007 0776 -16980

11 GHz 0963 17157 162 3402 0007 -4393 0792 -16982

12 GHz 0961 17024 153 2894 0007 -4779 0808 -16993

13 GHz 0957 16886 147 2378 0007 -5171 0823 -17013

14 GHz 0953 16739 143 1847 0007 -5572 0838 -17041

15 GHz 0948 16584 141 1295 0007 -5992 0853 -17074

16 GHz 0941 16419 140 711 0008 -6438 0868 -17114

17 GHz 0932 16242 141 085 0008 -6921 0882 -17161

18 GHz 0921 16054 144 -598 0009 -7456 0897 -17216

19 GHz 0906 15855 149 -1354 0009 -8057 0912 -17282

20 GHz 0887 15651 154 -2202 0010 -8743 0928 -17362

21 GHz 0863 15451 161 -3162 0011 -9534 0943 -17461

22 GHz 0836 15272 168 -4248 0012 -10443 0956 -17583

23 GHz 0807 15132 173 -5461 0012 -11471 0966 -17727

24 GHz 0782 15041 176 -6778 0013 -12592 0970 -17885

25 GHz 0767 14970 174 -8150 0013 -13758 0968 17958

26 GHz 0765 14857 169 -9515 0013 -14905 0960 17822

27 GHz 0772 14634 161 -10822 0012 -15982 0948 17717

28 GHz 0784 14257 152 -12049 0012 -16967 0937 17641

29 GHz 0795 13700 143 -13207 0012 -17868 0926 17588

30 GHz 0802 12935 137 -14326 0011 17284 0918 17548

32 GHz 0800 10538 129 -16646 0011 15552 0907 17480

34 GHz 0786 6235 125 16488 0011 13338 0901 17402

36 GHz 0824 -268 108 12815 0010 10376 0897 17296

38 GHz 0913 -6131 073 9346 0007 7668 0890 17172

40 GHz 0963 -9670 045 6963 0005 6078 0881 17041

42 GHz 0983 -11699 029 5387 0003 5302 0872 16893

44 GHz 0992 -12953 019 4245 0002 4941 0860 16719

46 GHz 0995 -13794 014 3327 0002 4762 0844 16511

48 GHz 0997 -14397 010 2519 0002 4636 0823 16261

50 GHz 0998 -14850 008 1750 0001 4482 0793 15954

52 GHz 0999 -15204 007 961 0001 4241 0751 15574

54 GHz 0999 -15490 006 093 0001 3857 0688 15096

56 GHz 0999 -15726 005 -920 0001 3267 0594 14502

58 GHz 0999 -15926 004 -2162 0001 2398 0453 13833

60 GHz 1000 -16097 004 -3699 0001 1187 0251 13618

Download this s-parameter file in ldquos2prdquo format at httpwwwcreecomproductswireless_s-parametersasp

10 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Product Dimensions CGH25120F (Package Type mdash 440162)

11 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Disclaimer

Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet

to be accurate and reliable However no responsibility is assumed by Cree for any infringement of patents or other

rights of third parties which may result from its use No license is granted by implication or otherwise under any patent

or patent rights of Cree Cree makes no warranty representation or guarantee regarding the suitability of its products

for any particular purpose ldquoTypicalrdquo parameters are the average values expected by Cree in large quantities and are

provided for information purposes only These values can and do vary in different applications and actual performance

can vary over time All operating parameters should be validated by customerrsquos technical experts for each application

Cree products are not designed intended or authorized for use as components in applications intended for surgical

implant into the body or to support or sustain life in applications in which the failure of the Cree product could result

in personal injury or death or in applications for planning construction maintenance or direct operation of a nuclear

facility

For more information please contact

Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomrf

Sarah MillerMarketing amp ExportCree RF Components19194075302

Ryan BakerMarketingCree RF Components19194077816

Tom DekkerSales DirectorCree RF Components19194075639

Page 9: CGH25120F

9 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Package S-Parameters for CGH25120(Small Signal VDS = 28 V IDQ = 500 mA angle in degrees)

Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22

500 MHz 0970 17955 323 6519 0006 -1955 0697 -17185

600 MHz 0969 17804 271 5973 0006 -2392 0712 -17111

700 MHz 0969 17668 235 5443 0006 -2813 0728 -17054

800 MHz 0968 17539 208 4924 0006 -3220 0744 -17015

900 MHz 0967 17412 188 4413 0006 -3617 0760 -16990

10 GHz 0965 17286 173 3907 0006 -4007 0776 -16980

11 GHz 0963 17157 162 3402 0007 -4393 0792 -16982

12 GHz 0961 17024 153 2894 0007 -4779 0808 -16993

13 GHz 0957 16886 147 2378 0007 -5171 0823 -17013

14 GHz 0953 16739 143 1847 0007 -5572 0838 -17041

15 GHz 0948 16584 141 1295 0007 -5992 0853 -17074

16 GHz 0941 16419 140 711 0008 -6438 0868 -17114

17 GHz 0932 16242 141 085 0008 -6921 0882 -17161

18 GHz 0921 16054 144 -598 0009 -7456 0897 -17216

19 GHz 0906 15855 149 -1354 0009 -8057 0912 -17282

20 GHz 0887 15651 154 -2202 0010 -8743 0928 -17362

21 GHz 0863 15451 161 -3162 0011 -9534 0943 -17461

22 GHz 0836 15272 168 -4248 0012 -10443 0956 -17583

23 GHz 0807 15132 173 -5461 0012 -11471 0966 -17727

24 GHz 0782 15041 176 -6778 0013 -12592 0970 -17885

25 GHz 0767 14970 174 -8150 0013 -13758 0968 17958

26 GHz 0765 14857 169 -9515 0013 -14905 0960 17822

27 GHz 0772 14634 161 -10822 0012 -15982 0948 17717

28 GHz 0784 14257 152 -12049 0012 -16967 0937 17641

29 GHz 0795 13700 143 -13207 0012 -17868 0926 17588

30 GHz 0802 12935 137 -14326 0011 17284 0918 17548

32 GHz 0800 10538 129 -16646 0011 15552 0907 17480

34 GHz 0786 6235 125 16488 0011 13338 0901 17402

36 GHz 0824 -268 108 12815 0010 10376 0897 17296

38 GHz 0913 -6131 073 9346 0007 7668 0890 17172

40 GHz 0963 -9670 045 6963 0005 6078 0881 17041

42 GHz 0983 -11699 029 5387 0003 5302 0872 16893

44 GHz 0992 -12953 019 4245 0002 4941 0860 16719

46 GHz 0995 -13794 014 3327 0002 4762 0844 16511

48 GHz 0997 -14397 010 2519 0002 4636 0823 16261

50 GHz 0998 -14850 008 1750 0001 4482 0793 15954

52 GHz 0999 -15204 007 961 0001 4241 0751 15574

54 GHz 0999 -15490 006 093 0001 3857 0688 15096

56 GHz 0999 -15726 005 -920 0001 3267 0594 14502

58 GHz 0999 -15926 004 -2162 0001 2398 0453 13833

60 GHz 1000 -16097 004 -3699 0001 1187 0251 13618

Download this s-parameter file in ldquos2prdquo format at httpwwwcreecomproductswireless_s-parametersasp

10 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Product Dimensions CGH25120F (Package Type mdash 440162)

11 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Disclaimer

Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet

to be accurate and reliable However no responsibility is assumed by Cree for any infringement of patents or other

rights of third parties which may result from its use No license is granted by implication or otherwise under any patent

or patent rights of Cree Cree makes no warranty representation or guarantee regarding the suitability of its products

for any particular purpose ldquoTypicalrdquo parameters are the average values expected by Cree in large quantities and are

provided for information purposes only These values can and do vary in different applications and actual performance

can vary over time All operating parameters should be validated by customerrsquos technical experts for each application

Cree products are not designed intended or authorized for use as components in applications intended for surgical

implant into the body or to support or sustain life in applications in which the failure of the Cree product could result

in personal injury or death or in applications for planning construction maintenance or direct operation of a nuclear

facility

For more information please contact

Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomrf

Sarah MillerMarketing amp ExportCree RF Components19194075302

Ryan BakerMarketingCree RF Components19194077816

Tom DekkerSales DirectorCree RF Components19194075639

Page 10: CGH25120F

10 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Product Dimensions CGH25120F (Package Type mdash 440162)

11 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Disclaimer

Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet

to be accurate and reliable However no responsibility is assumed by Cree for any infringement of patents or other

rights of third parties which may result from its use No license is granted by implication or otherwise under any patent

or patent rights of Cree Cree makes no warranty representation or guarantee regarding the suitability of its products

for any particular purpose ldquoTypicalrdquo parameters are the average values expected by Cree in large quantities and are

provided for information purposes only These values can and do vary in different applications and actual performance

can vary over time All operating parameters should be validated by customerrsquos technical experts for each application

Cree products are not designed intended or authorized for use as components in applications intended for surgical

implant into the body or to support or sustain life in applications in which the failure of the Cree product could result

in personal injury or death or in applications for planning construction maintenance or direct operation of a nuclear

facility

For more information please contact

Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomrf

Sarah MillerMarketing amp ExportCree RF Components19194075302

Ryan BakerMarketingCree RF Components19194077816

Tom DekkerSales DirectorCree RF Components19194075639

Page 11: CGH25120F

11 CGH25120F Rev 22

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Disclaimer

Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet

to be accurate and reliable However no responsibility is assumed by Cree for any infringement of patents or other

rights of third parties which may result from its use No license is granted by implication or otherwise under any patent

or patent rights of Cree Cree makes no warranty representation or guarantee regarding the suitability of its products

for any particular purpose ldquoTypicalrdquo parameters are the average values expected by Cree in large quantities and are

provided for information purposes only These values can and do vary in different applications and actual performance

can vary over time All operating parameters should be validated by customerrsquos technical experts for each application

Cree products are not designed intended or authorized for use as components in applications intended for surgical

implant into the body or to support or sustain life in applications in which the failure of the Cree product could result

in personal injury or death or in applications for planning construction maintenance or direct operation of a nuclear

facility

For more information please contact

Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomrf

Sarah MillerMarketing amp ExportCree RF Components19194075302

Ryan BakerMarketingCree RF Components19194077816

Tom DekkerSales DirectorCree RF Components19194075639