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CGH55030F, 30W, 5500-5800MHz, GaN HEMT by...

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1 Subject to change without notice. www.cree.com/wireless CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree’s CGH55030F2/CGH55030P2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/ CGH55030P2 ideal for C-band pulsed or CW saturated amplifiers. The transistor is available in both screw-down, flange and solder-down, pill packages. Based on appropriate external match adjustment, the CGH55030F2/CGH55030P2 is suitable for applications up to 6 GHz. Package Type: 440196 & 440166 PN: CGH55030P2 & CGH55030F2 Rev 3.2 – April 2012 FEATURES 4.5 to 6.0 GHz Operation 12 dB Small Signal Gain at 5.65 GHz 30 W typical P SAT 60 % Efficiency at P SAT 28 V Operation APPLICATIONS 2-Way Private Radio Broadband Amplifiers Cellular Infrastructure Test Instrumentation Class A, AB Amplifiers for Drivers and Gain Blocks
Transcript
Page 1: CGH55030F, 30W, 5500-5800MHz, GaN HEMT by …propagation.ece.gatech.edu/ECE6361/project/Project02/Resource for... · mobility transistor (HEMT) ... R e v 3. 2 – A p r i l 2 0 1

1Subject to change without noticewwwcreecomwireless

CGH55030F2 CGH55030P225 W C-band Unmatched GaN HEMT

Creersquos CGH55030F2CGH55030P2 is a gallium nitride (GaN) high electron

mobility transistor (HEMT) designed specifically for high efficiency high

gain and wide bandwidth capabilities which makes the CGH55030F2

CGH55030P2 ideal for C-band pulsed or CW saturated amplifiers The

transistor is available in both screw-down flange and solder-down

pill packages Based on appropriate external match adjustment the

CGH55030F2CGH55030P2 is suitable for applications up to 6 GHzPackage Type 440196 amp 440166PN CGH55030P2 amp CGH55030F2

Rev 3

2 ndash

Ap

ril 2

01

2

FEATURES

bull 45 to 60 GHz Operation

bull 12 dB Small Signal Gain at 565 GHz

bull 30 W typical PSAT

bull 60 Efficiency at PSAT

bull 28 V Operation

APPLICATIONS

bull 2-Way Private Radio

bull Broadband Amplifiers

bull Cellular Infrastructure

bull Test Instrumentation

bull Class A AB Amplifiers for Drivers and

Gain Blocks

2 CGH55030F2_P2 Rev 32

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2008-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature

Parameter Symbol Rating Units Conditions

Drain-Source Voltage VDSS 84 Volts 25˚C

Gate-to-Source Voltage VGS -10 +2 Volts 25˚C

Storage Temperature TSTG -65 +150 ˚C

Operating Junction Temperature TJ 225 ˚C

Maximum Forward Gate Current IGMAX 70 mA 25˚C

Maximum Drain Current1 IMAX 3 A 25˚C

Soldering Temperature2 TS 245 ˚C

Screw Torque τ 60 in-oz

Thermal Resistance Junction to Case3 RθJC 48 ˚CW 85˚C

Case Operating Temperature34 TC -40 +150 ˚C 30 seconds

Note1 Current limit for long term reliable operation2 Refer to the Application Note on soldering at wwwcreecomproductswireless_appnotesasp3 Measured for the CGH55030 at PDISS = 28 W4 See also the Power Dissipation De-rating Curve on Page 5

Electrical Characteristics (TC = 25˚C)

Characteristics Symbol Min Typ Max Units Conditions

DC Characteristics1

Gate Threshold Voltage VGS(th) -38 -30 ndash23 VDC VDS = 10 V ID = 72 mA

Gate Quiescent Voltage VGS(Q) ndash -30 ndash VDC VDS = 28 V ID = 250 mA

Saturated Drain Current IDS 58 70 ndash A VDS = 60 V VGS = 2 V

Drain-Source Breakdown Voltage VBR 120 ndash ndash VDC VGS = -8 V ID = 72 mA

RF Characteristics2 (TC = 25˚C F0 = 565 GHz unless otherwise noted)

Small Signal Gain GSS 90 110 - dB VDD = 28 V IDQ = 250 mA

Power Output3 PSAT 20 30 ndash W VDD = 28 V IDQ = 250 mA

Drain Efficiency4 η 50 60 ndash VDD = 28 V IDQ = 250 mA PSAT

Output Mismatch Stress VSWR - ndash 10 1 Y No damage at all phase angles VDD = 28 V IDQ = 250 mA PSAT

Dynamic Characteristics

Input Capacitance CGS ndash 90 ndash pF VDS = 28 V Vgs = -8 V f = 1 MHz

Output Capacitance CDS ndash 26 ndash pF VDS = 28 V Vgs = -8 V f = 1 MHz

Feedback Capacitance CGD ndash 04 ndash pF VDS = 28 V Vgs = -8 V f = 1 MHz

Notes1 Measured on wafer prior to packaging2 Measured in CGH55030-TB3 PSAT is defined as IG = 072 mA4 Drain Efficiency = POUT PDC

3 CGH55030F2_P2 Rev 32

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2008-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Performance

Small Signal S-Parameters vs Frequency of CGH55030F2 and CGH55030P2 in the CGH55030-TB

VDD = 28 V IDQ = 250 mA

Drain Efficiency Power and Gain vs Frequency of the CGH55030F2 and CGH55030P2 in the CGH55030-TB

VDD = 28 V IDQ = 250 mA

0

2

4

6

8

10

12

52 53 54 55 56 57 58 59 60 61

Frequency (GHz)

S21

(dB

)

-25

-20

-15

-10

-5

0

5

S11

(dB

)

S21

S11

40

50

60

70

Dra

inEf

ficie

ncy

()

Pow

er(d

Bm

)G

ain

(dB

)

CGH55030 - GaN HEMT C-Band PerformanceDrain Efficiency Power and Gain vs Frequency

0

10

20

30

40

53 54 55 56 57 58 59 6

Dra

inEf

ficie

ncy

()

Pow

er(d

Bm

)G

ain

(dB

)

Frequency (GHz)

Gain (dB)

Psat (dBm)

Drain Efficiency ()

4 CGH55030F2_P2 Rev 32

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2008-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Performance

Simulated Maximum Available Gain and K Factor of the CGH55030F2CGH55030P2VDD = 28 V IDQ = 250 mA

Typical Noise Performance

Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH55030F2CGH55030P2

VDD = 28 V IDQ = 250 mA

Electrostatic Discharge (ESD) Classifications

Parameter Symbol Class Test Methodology

Human Body Model HBM 1A (gt 250 V) JEDEC JESD22 A114-D

Charge Device Model CDM II (200 lt 500 V) JEDEC JESD22 C101-C

MA

G (d

B)

K F

acto

r

Min

imum

Noi

se F

igur

e (d

B)

Noi

se R

esis

tanc

e (O

hms)

5 CGH55030F2_P2 Rev 32

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2008-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Source and Load Impedances

Frequency (MHz) Z Source Z Load

5500 80 ndash j124 141 ndash j126

5650 87 - j131 147 ndash j117

5800 84 - j140 154 ndash j110

Note 1 VDD = 28V IDQ = 250 mA in the 440166 package

Note 2 Impedances are extracted from the CGH55030-TB demonstration

amplifier and are not source and load pull data derived from the transistor

CGH55030F2 and CGH55030P2 Power Dissipation De-rating Curve

Note 1 Area exceeds Maximum Case Operating Temperature (See Page 2)

D

Z Source Z Load

G

S

20

25

30

Pow

erD

issi

patio

n(W

)

CGH40025F CW Power Dissipation De-rating Curve

0

5

10

15

0 25 50 75 100 125 150 175 200 225 250

Pow

erD

issi

patio

n(W

)

Maximum Case Temperature (degC)

Note 1

6 CGH55030F2_P2 Rev 32

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2008-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

CGH55030-TB Demonstration Amplifier Circuit Bill of Materials

Designator Description Qty

R1 RES 116W 0603 1 562 OHMS 1

R2 RES 116W 0603 1 226 OHMS 1

C2 CAP 03pF +-005pF 0402 ATC600L 1

C16 CAP 33 UF 20 G CASE 1

C15 CAP 10UF 100V 10 X7R 1210 1

C8 CAP 10UF 16V TANTALUM 1

C9 CAP 04pF +-005pF 0603 ATC600S 1

C1 CAP 12pF +-01pF 0603 ATC600S 1

C6C13 CAP200 PF0603 PKG 100 V 2

C4C11 CAP 100pF+-5 0603 ATC600S 2

C5C12 CAP 39pF +-5 0603 ATC600S 2

C7C14 CAP 330000PF 0805 100V TEMP STABILIZ 2

J3J4 CONN SMA PANEL MOUNT JACK FLANGE 2

J1 HEADER RTgtPLZ 1CEN LK 5POS 1

- PCB RO4350B Er = 348 h = 20 mil 1

- CGH55030 1

CGH55030-TB Demonstration Amplifier Circuit

7 CGH55030F2_P2 Rev 32

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2008-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

CGH55030-TB Demonstration Amplifier Circuit Schematic

CGH55030-TB Demonstration Amplifier Circuit Outline

(CGH55030F)

8 CGH55030F2_P2 Rev 32

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2008-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Package S-Parameters for CGH55030(Small Signal VDS = 28 V IDQ = 250 mA angle in degrees)

Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22

500 MHz 0917 -15722 1262 9145 0018 756 0458 -15897

600 MHz 0916 -16192 1057 8733 0018 470 0465 -16093

700 MHz 0916 -16546 907 8378 0018 241 0472 -16219

800 MHz 0916 -16828 794 8058 0018 051 0478 -16304

900 MHz 0916 -17061 705 7764 0017 -112 0485 -16364

10 GHz 0916 -17260 633 7488 0017 -255 0493 -16409

11 GHz 0917 -17433 574 7225 0017 -382 0500 -16445

12 GHz 0917 -17588 524 6973 0017 -494 0508 -16477

13 GHz 0918 -17728 482 6730 0017 -595 0516 -16506

14 GHz 0918 -17857 446 6494 0017 -684 0525 -16536

15 GHz 0919 -17978 414 6265 0016 -763 0533 -16567

16 GHz 0919 17909 387 6041 0016 -831 0542 -16599

17 GHz 0920 17801 362 5822 0016 -890 0550 -16635

18 GHz 0921 17698 340 5607 0016 -939 0559 -16673

19 GHz 0921 17599 321 5397 0015 -977 0568 -16714

20 GHz 0922 17503 303 5190 0015 -1006 0577 -16759

21 GHz 0923 17409 287 4987 0015 -1024 0585 -16807

22 GHz 0924 17317 273 4787 0014 -1031 0594 -16857

23 GHz 0924 17227 260 4591 0014 -1027 0602 -16911

24 GHz 0925 17139 247 4397 0014 -1012 0610 -16967

25 GHz 0926 17051 236 4207 0014 -985 0619 -17026

26 GHz 0926 16965 226 4019 0013 -946 0626 -17088

27 GHz 0927 16879 216 3834 0013 -895 0634 -17152

28 GHz 0928 16793 208 3652 0013 -831 0642 -17217

29 GHz 0928 16708 199 3472 0013 -754 0649 -17285

30 GHz 0929 16624 192 3294 0013 -665 0656 -17355

32 GHz 0930 16454 178 2945 0012 -449 0670 -17500

34 GHz 0931 16285 166 2605 0012 -185 0683 -17650

36 GHz 0932 16114 155 2272 0012 119 0695 -17806

38 GHz 0933 15942 146 1946 0012 455 0706 -17966

40 GHz 0933 15768 138 1627 0012 808 0716 17870

42 GHz 0934 15591 131 1312 0012 1164 0726 17702

44 GHz 0934 15411 124 1003 0013 1508 0735 17530

46 GHz 0935 15228 118 697 0013 1826 0743 17356

48 GHz 0935 15041 113 395 0014 2109 0750 17178

50 GHz 0935 14849 108 096 0015 2350 0756 16997

52 GHz 0935 14653 104 -200 0016 2548 0762 16812

54 GHz 0935 14452 100 -496 0017 2702 0768 16624

56 GHz 0935 14245 097 -790 0018 2812 0773 16432

58 GHz 0934 14031 094 -1084 0020 2883 0777 16236

60 GHz 0934 13812 091 -1379 0021 2918 0781 16036

Download this s-parameter file in ldquos2prdquo format at httpwwwcreecomproductswireless_s-parametersasp

9 CGH55030F2_P2 Rev 32

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2008-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Product Dimensions CGH55030F (Package Type mdash 440166)

Product Dimensions CGH55030P (Package Type mdash 440196)

10 CGH55030F2_P2 Rev 32

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2008-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Disclaimer

Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet

to be accurate and reliable However no responsibility is assumed by Cree for any infringement of patents or other

rights of third parties which may result from its use No license is granted by implication or otherwise under any patent

or patent rights of Cree Cree makes no warranty representation or guarantee regarding the suitability of its products

for any particular purpose ldquoTypicalrdquo parameters are the average values expected by Cree in large quantities and are

provided for information purposes only These values can and do vary in different applications and actual performance

can vary over time All operating parameters should be validated by customerrsquos technical experts for each application

Cree products are not designed intended or authorized for use as components in applications intended for surgical

implant into the body or to support or sustain life in applications in which the failure of the Cree product could result

in personal injury or death or in applications for planning construction maintenance or direct operation of a nuclear

facility

For more information please contact

Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomwireless

Sarah MillerMarketing amp ExportCree RF Components9194075302

Ryan BakerMarketingCree RF Components9194077816

Tom DekkerSales DirectorCree RF Components9194075639

Page 2: CGH55030F, 30W, 5500-5800MHz, GaN HEMT by …propagation.ece.gatech.edu/ECE6361/project/Project02/Resource for... · mobility transistor (HEMT) ... R e v 3. 2 – A p r i l 2 0 1

2 CGH55030F2_P2 Rev 32

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2008-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature

Parameter Symbol Rating Units Conditions

Drain-Source Voltage VDSS 84 Volts 25˚C

Gate-to-Source Voltage VGS -10 +2 Volts 25˚C

Storage Temperature TSTG -65 +150 ˚C

Operating Junction Temperature TJ 225 ˚C

Maximum Forward Gate Current IGMAX 70 mA 25˚C

Maximum Drain Current1 IMAX 3 A 25˚C

Soldering Temperature2 TS 245 ˚C

Screw Torque τ 60 in-oz

Thermal Resistance Junction to Case3 RθJC 48 ˚CW 85˚C

Case Operating Temperature34 TC -40 +150 ˚C 30 seconds

Note1 Current limit for long term reliable operation2 Refer to the Application Note on soldering at wwwcreecomproductswireless_appnotesasp3 Measured for the CGH55030 at PDISS = 28 W4 See also the Power Dissipation De-rating Curve on Page 5

Electrical Characteristics (TC = 25˚C)

Characteristics Symbol Min Typ Max Units Conditions

DC Characteristics1

Gate Threshold Voltage VGS(th) -38 -30 ndash23 VDC VDS = 10 V ID = 72 mA

Gate Quiescent Voltage VGS(Q) ndash -30 ndash VDC VDS = 28 V ID = 250 mA

Saturated Drain Current IDS 58 70 ndash A VDS = 60 V VGS = 2 V

Drain-Source Breakdown Voltage VBR 120 ndash ndash VDC VGS = -8 V ID = 72 mA

RF Characteristics2 (TC = 25˚C F0 = 565 GHz unless otherwise noted)

Small Signal Gain GSS 90 110 - dB VDD = 28 V IDQ = 250 mA

Power Output3 PSAT 20 30 ndash W VDD = 28 V IDQ = 250 mA

Drain Efficiency4 η 50 60 ndash VDD = 28 V IDQ = 250 mA PSAT

Output Mismatch Stress VSWR - ndash 10 1 Y No damage at all phase angles VDD = 28 V IDQ = 250 mA PSAT

Dynamic Characteristics

Input Capacitance CGS ndash 90 ndash pF VDS = 28 V Vgs = -8 V f = 1 MHz

Output Capacitance CDS ndash 26 ndash pF VDS = 28 V Vgs = -8 V f = 1 MHz

Feedback Capacitance CGD ndash 04 ndash pF VDS = 28 V Vgs = -8 V f = 1 MHz

Notes1 Measured on wafer prior to packaging2 Measured in CGH55030-TB3 PSAT is defined as IG = 072 mA4 Drain Efficiency = POUT PDC

3 CGH55030F2_P2 Rev 32

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2008-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Performance

Small Signal S-Parameters vs Frequency of CGH55030F2 and CGH55030P2 in the CGH55030-TB

VDD = 28 V IDQ = 250 mA

Drain Efficiency Power and Gain vs Frequency of the CGH55030F2 and CGH55030P2 in the CGH55030-TB

VDD = 28 V IDQ = 250 mA

0

2

4

6

8

10

12

52 53 54 55 56 57 58 59 60 61

Frequency (GHz)

S21

(dB

)

-25

-20

-15

-10

-5

0

5

S11

(dB

)

S21

S11

40

50

60

70

Dra

inEf

ficie

ncy

()

Pow

er(d

Bm

)G

ain

(dB

)

CGH55030 - GaN HEMT C-Band PerformanceDrain Efficiency Power and Gain vs Frequency

0

10

20

30

40

53 54 55 56 57 58 59 6

Dra

inEf

ficie

ncy

()

Pow

er(d

Bm

)G

ain

(dB

)

Frequency (GHz)

Gain (dB)

Psat (dBm)

Drain Efficiency ()

4 CGH55030F2_P2 Rev 32

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2008-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Performance

Simulated Maximum Available Gain and K Factor of the CGH55030F2CGH55030P2VDD = 28 V IDQ = 250 mA

Typical Noise Performance

Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH55030F2CGH55030P2

VDD = 28 V IDQ = 250 mA

Electrostatic Discharge (ESD) Classifications

Parameter Symbol Class Test Methodology

Human Body Model HBM 1A (gt 250 V) JEDEC JESD22 A114-D

Charge Device Model CDM II (200 lt 500 V) JEDEC JESD22 C101-C

MA

G (d

B)

K F

acto

r

Min

imum

Noi

se F

igur

e (d

B)

Noi

se R

esis

tanc

e (O

hms)

5 CGH55030F2_P2 Rev 32

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2008-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Source and Load Impedances

Frequency (MHz) Z Source Z Load

5500 80 ndash j124 141 ndash j126

5650 87 - j131 147 ndash j117

5800 84 - j140 154 ndash j110

Note 1 VDD = 28V IDQ = 250 mA in the 440166 package

Note 2 Impedances are extracted from the CGH55030-TB demonstration

amplifier and are not source and load pull data derived from the transistor

CGH55030F2 and CGH55030P2 Power Dissipation De-rating Curve

Note 1 Area exceeds Maximum Case Operating Temperature (See Page 2)

D

Z Source Z Load

G

S

20

25

30

Pow

erD

issi

patio

n(W

)

CGH40025F CW Power Dissipation De-rating Curve

0

5

10

15

0 25 50 75 100 125 150 175 200 225 250

Pow

erD

issi

patio

n(W

)

Maximum Case Temperature (degC)

Note 1

6 CGH55030F2_P2 Rev 32

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2008-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

CGH55030-TB Demonstration Amplifier Circuit Bill of Materials

Designator Description Qty

R1 RES 116W 0603 1 562 OHMS 1

R2 RES 116W 0603 1 226 OHMS 1

C2 CAP 03pF +-005pF 0402 ATC600L 1

C16 CAP 33 UF 20 G CASE 1

C15 CAP 10UF 100V 10 X7R 1210 1

C8 CAP 10UF 16V TANTALUM 1

C9 CAP 04pF +-005pF 0603 ATC600S 1

C1 CAP 12pF +-01pF 0603 ATC600S 1

C6C13 CAP200 PF0603 PKG 100 V 2

C4C11 CAP 100pF+-5 0603 ATC600S 2

C5C12 CAP 39pF +-5 0603 ATC600S 2

C7C14 CAP 330000PF 0805 100V TEMP STABILIZ 2

J3J4 CONN SMA PANEL MOUNT JACK FLANGE 2

J1 HEADER RTgtPLZ 1CEN LK 5POS 1

- PCB RO4350B Er = 348 h = 20 mil 1

- CGH55030 1

CGH55030-TB Demonstration Amplifier Circuit

7 CGH55030F2_P2 Rev 32

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2008-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

CGH55030-TB Demonstration Amplifier Circuit Schematic

CGH55030-TB Demonstration Amplifier Circuit Outline

(CGH55030F)

8 CGH55030F2_P2 Rev 32

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2008-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Package S-Parameters for CGH55030(Small Signal VDS = 28 V IDQ = 250 mA angle in degrees)

Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22

500 MHz 0917 -15722 1262 9145 0018 756 0458 -15897

600 MHz 0916 -16192 1057 8733 0018 470 0465 -16093

700 MHz 0916 -16546 907 8378 0018 241 0472 -16219

800 MHz 0916 -16828 794 8058 0018 051 0478 -16304

900 MHz 0916 -17061 705 7764 0017 -112 0485 -16364

10 GHz 0916 -17260 633 7488 0017 -255 0493 -16409

11 GHz 0917 -17433 574 7225 0017 -382 0500 -16445

12 GHz 0917 -17588 524 6973 0017 -494 0508 -16477

13 GHz 0918 -17728 482 6730 0017 -595 0516 -16506

14 GHz 0918 -17857 446 6494 0017 -684 0525 -16536

15 GHz 0919 -17978 414 6265 0016 -763 0533 -16567

16 GHz 0919 17909 387 6041 0016 -831 0542 -16599

17 GHz 0920 17801 362 5822 0016 -890 0550 -16635

18 GHz 0921 17698 340 5607 0016 -939 0559 -16673

19 GHz 0921 17599 321 5397 0015 -977 0568 -16714

20 GHz 0922 17503 303 5190 0015 -1006 0577 -16759

21 GHz 0923 17409 287 4987 0015 -1024 0585 -16807

22 GHz 0924 17317 273 4787 0014 -1031 0594 -16857

23 GHz 0924 17227 260 4591 0014 -1027 0602 -16911

24 GHz 0925 17139 247 4397 0014 -1012 0610 -16967

25 GHz 0926 17051 236 4207 0014 -985 0619 -17026

26 GHz 0926 16965 226 4019 0013 -946 0626 -17088

27 GHz 0927 16879 216 3834 0013 -895 0634 -17152

28 GHz 0928 16793 208 3652 0013 -831 0642 -17217

29 GHz 0928 16708 199 3472 0013 -754 0649 -17285

30 GHz 0929 16624 192 3294 0013 -665 0656 -17355

32 GHz 0930 16454 178 2945 0012 -449 0670 -17500

34 GHz 0931 16285 166 2605 0012 -185 0683 -17650

36 GHz 0932 16114 155 2272 0012 119 0695 -17806

38 GHz 0933 15942 146 1946 0012 455 0706 -17966

40 GHz 0933 15768 138 1627 0012 808 0716 17870

42 GHz 0934 15591 131 1312 0012 1164 0726 17702

44 GHz 0934 15411 124 1003 0013 1508 0735 17530

46 GHz 0935 15228 118 697 0013 1826 0743 17356

48 GHz 0935 15041 113 395 0014 2109 0750 17178

50 GHz 0935 14849 108 096 0015 2350 0756 16997

52 GHz 0935 14653 104 -200 0016 2548 0762 16812

54 GHz 0935 14452 100 -496 0017 2702 0768 16624

56 GHz 0935 14245 097 -790 0018 2812 0773 16432

58 GHz 0934 14031 094 -1084 0020 2883 0777 16236

60 GHz 0934 13812 091 -1379 0021 2918 0781 16036

Download this s-parameter file in ldquos2prdquo format at httpwwwcreecomproductswireless_s-parametersasp

9 CGH55030F2_P2 Rev 32

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2008-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Product Dimensions CGH55030F (Package Type mdash 440166)

Product Dimensions CGH55030P (Package Type mdash 440196)

10 CGH55030F2_P2 Rev 32

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2008-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Disclaimer

Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet

to be accurate and reliable However no responsibility is assumed by Cree for any infringement of patents or other

rights of third parties which may result from its use No license is granted by implication or otherwise under any patent

or patent rights of Cree Cree makes no warranty representation or guarantee regarding the suitability of its products

for any particular purpose ldquoTypicalrdquo parameters are the average values expected by Cree in large quantities and are

provided for information purposes only These values can and do vary in different applications and actual performance

can vary over time All operating parameters should be validated by customerrsquos technical experts for each application

Cree products are not designed intended or authorized for use as components in applications intended for surgical

implant into the body or to support or sustain life in applications in which the failure of the Cree product could result

in personal injury or death or in applications for planning construction maintenance or direct operation of a nuclear

facility

For more information please contact

Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomwireless

Sarah MillerMarketing amp ExportCree RF Components9194075302

Ryan BakerMarketingCree RF Components9194077816

Tom DekkerSales DirectorCree RF Components9194075639

Page 3: CGH55030F, 30W, 5500-5800MHz, GaN HEMT by …propagation.ece.gatech.edu/ECE6361/project/Project02/Resource for... · mobility transistor (HEMT) ... R e v 3. 2 – A p r i l 2 0 1

3 CGH55030F2_P2 Rev 32

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2008-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Performance

Small Signal S-Parameters vs Frequency of CGH55030F2 and CGH55030P2 in the CGH55030-TB

VDD = 28 V IDQ = 250 mA

Drain Efficiency Power and Gain vs Frequency of the CGH55030F2 and CGH55030P2 in the CGH55030-TB

VDD = 28 V IDQ = 250 mA

0

2

4

6

8

10

12

52 53 54 55 56 57 58 59 60 61

Frequency (GHz)

S21

(dB

)

-25

-20

-15

-10

-5

0

5

S11

(dB

)

S21

S11

40

50

60

70

Dra

inEf

ficie

ncy

()

Pow

er(d

Bm

)G

ain

(dB

)

CGH55030 - GaN HEMT C-Band PerformanceDrain Efficiency Power and Gain vs Frequency

0

10

20

30

40

53 54 55 56 57 58 59 6

Dra

inEf

ficie

ncy

()

Pow

er(d

Bm

)G

ain

(dB

)

Frequency (GHz)

Gain (dB)

Psat (dBm)

Drain Efficiency ()

4 CGH55030F2_P2 Rev 32

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2008-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Performance

Simulated Maximum Available Gain and K Factor of the CGH55030F2CGH55030P2VDD = 28 V IDQ = 250 mA

Typical Noise Performance

Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH55030F2CGH55030P2

VDD = 28 V IDQ = 250 mA

Electrostatic Discharge (ESD) Classifications

Parameter Symbol Class Test Methodology

Human Body Model HBM 1A (gt 250 V) JEDEC JESD22 A114-D

Charge Device Model CDM II (200 lt 500 V) JEDEC JESD22 C101-C

MA

G (d

B)

K F

acto

r

Min

imum

Noi

se F

igur

e (d

B)

Noi

se R

esis

tanc

e (O

hms)

5 CGH55030F2_P2 Rev 32

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2008-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Source and Load Impedances

Frequency (MHz) Z Source Z Load

5500 80 ndash j124 141 ndash j126

5650 87 - j131 147 ndash j117

5800 84 - j140 154 ndash j110

Note 1 VDD = 28V IDQ = 250 mA in the 440166 package

Note 2 Impedances are extracted from the CGH55030-TB demonstration

amplifier and are not source and load pull data derived from the transistor

CGH55030F2 and CGH55030P2 Power Dissipation De-rating Curve

Note 1 Area exceeds Maximum Case Operating Temperature (See Page 2)

D

Z Source Z Load

G

S

20

25

30

Pow

erD

issi

patio

n(W

)

CGH40025F CW Power Dissipation De-rating Curve

0

5

10

15

0 25 50 75 100 125 150 175 200 225 250

Pow

erD

issi

patio

n(W

)

Maximum Case Temperature (degC)

Note 1

6 CGH55030F2_P2 Rev 32

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2008-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

CGH55030-TB Demonstration Amplifier Circuit Bill of Materials

Designator Description Qty

R1 RES 116W 0603 1 562 OHMS 1

R2 RES 116W 0603 1 226 OHMS 1

C2 CAP 03pF +-005pF 0402 ATC600L 1

C16 CAP 33 UF 20 G CASE 1

C15 CAP 10UF 100V 10 X7R 1210 1

C8 CAP 10UF 16V TANTALUM 1

C9 CAP 04pF +-005pF 0603 ATC600S 1

C1 CAP 12pF +-01pF 0603 ATC600S 1

C6C13 CAP200 PF0603 PKG 100 V 2

C4C11 CAP 100pF+-5 0603 ATC600S 2

C5C12 CAP 39pF +-5 0603 ATC600S 2

C7C14 CAP 330000PF 0805 100V TEMP STABILIZ 2

J3J4 CONN SMA PANEL MOUNT JACK FLANGE 2

J1 HEADER RTgtPLZ 1CEN LK 5POS 1

- PCB RO4350B Er = 348 h = 20 mil 1

- CGH55030 1

CGH55030-TB Demonstration Amplifier Circuit

7 CGH55030F2_P2 Rev 32

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2008-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

CGH55030-TB Demonstration Amplifier Circuit Schematic

CGH55030-TB Demonstration Amplifier Circuit Outline

(CGH55030F)

8 CGH55030F2_P2 Rev 32

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2008-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Package S-Parameters for CGH55030(Small Signal VDS = 28 V IDQ = 250 mA angle in degrees)

Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22

500 MHz 0917 -15722 1262 9145 0018 756 0458 -15897

600 MHz 0916 -16192 1057 8733 0018 470 0465 -16093

700 MHz 0916 -16546 907 8378 0018 241 0472 -16219

800 MHz 0916 -16828 794 8058 0018 051 0478 -16304

900 MHz 0916 -17061 705 7764 0017 -112 0485 -16364

10 GHz 0916 -17260 633 7488 0017 -255 0493 -16409

11 GHz 0917 -17433 574 7225 0017 -382 0500 -16445

12 GHz 0917 -17588 524 6973 0017 -494 0508 -16477

13 GHz 0918 -17728 482 6730 0017 -595 0516 -16506

14 GHz 0918 -17857 446 6494 0017 -684 0525 -16536

15 GHz 0919 -17978 414 6265 0016 -763 0533 -16567

16 GHz 0919 17909 387 6041 0016 -831 0542 -16599

17 GHz 0920 17801 362 5822 0016 -890 0550 -16635

18 GHz 0921 17698 340 5607 0016 -939 0559 -16673

19 GHz 0921 17599 321 5397 0015 -977 0568 -16714

20 GHz 0922 17503 303 5190 0015 -1006 0577 -16759

21 GHz 0923 17409 287 4987 0015 -1024 0585 -16807

22 GHz 0924 17317 273 4787 0014 -1031 0594 -16857

23 GHz 0924 17227 260 4591 0014 -1027 0602 -16911

24 GHz 0925 17139 247 4397 0014 -1012 0610 -16967

25 GHz 0926 17051 236 4207 0014 -985 0619 -17026

26 GHz 0926 16965 226 4019 0013 -946 0626 -17088

27 GHz 0927 16879 216 3834 0013 -895 0634 -17152

28 GHz 0928 16793 208 3652 0013 -831 0642 -17217

29 GHz 0928 16708 199 3472 0013 -754 0649 -17285

30 GHz 0929 16624 192 3294 0013 -665 0656 -17355

32 GHz 0930 16454 178 2945 0012 -449 0670 -17500

34 GHz 0931 16285 166 2605 0012 -185 0683 -17650

36 GHz 0932 16114 155 2272 0012 119 0695 -17806

38 GHz 0933 15942 146 1946 0012 455 0706 -17966

40 GHz 0933 15768 138 1627 0012 808 0716 17870

42 GHz 0934 15591 131 1312 0012 1164 0726 17702

44 GHz 0934 15411 124 1003 0013 1508 0735 17530

46 GHz 0935 15228 118 697 0013 1826 0743 17356

48 GHz 0935 15041 113 395 0014 2109 0750 17178

50 GHz 0935 14849 108 096 0015 2350 0756 16997

52 GHz 0935 14653 104 -200 0016 2548 0762 16812

54 GHz 0935 14452 100 -496 0017 2702 0768 16624

56 GHz 0935 14245 097 -790 0018 2812 0773 16432

58 GHz 0934 14031 094 -1084 0020 2883 0777 16236

60 GHz 0934 13812 091 -1379 0021 2918 0781 16036

Download this s-parameter file in ldquos2prdquo format at httpwwwcreecomproductswireless_s-parametersasp

9 CGH55030F2_P2 Rev 32

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2008-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Product Dimensions CGH55030F (Package Type mdash 440166)

Product Dimensions CGH55030P (Package Type mdash 440196)

10 CGH55030F2_P2 Rev 32

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2008-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Disclaimer

Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet

to be accurate and reliable However no responsibility is assumed by Cree for any infringement of patents or other

rights of third parties which may result from its use No license is granted by implication or otherwise under any patent

or patent rights of Cree Cree makes no warranty representation or guarantee regarding the suitability of its products

for any particular purpose ldquoTypicalrdquo parameters are the average values expected by Cree in large quantities and are

provided for information purposes only These values can and do vary in different applications and actual performance

can vary over time All operating parameters should be validated by customerrsquos technical experts for each application

Cree products are not designed intended or authorized for use as components in applications intended for surgical

implant into the body or to support or sustain life in applications in which the failure of the Cree product could result

in personal injury or death or in applications for planning construction maintenance or direct operation of a nuclear

facility

For more information please contact

Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomwireless

Sarah MillerMarketing amp ExportCree RF Components9194075302

Ryan BakerMarketingCree RF Components9194077816

Tom DekkerSales DirectorCree RF Components9194075639

Page 4: CGH55030F, 30W, 5500-5800MHz, GaN HEMT by …propagation.ece.gatech.edu/ECE6361/project/Project02/Resource for... · mobility transistor (HEMT) ... R e v 3. 2 – A p r i l 2 0 1

4 CGH55030F2_P2 Rev 32

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2008-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Performance

Simulated Maximum Available Gain and K Factor of the CGH55030F2CGH55030P2VDD = 28 V IDQ = 250 mA

Typical Noise Performance

Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH55030F2CGH55030P2

VDD = 28 V IDQ = 250 mA

Electrostatic Discharge (ESD) Classifications

Parameter Symbol Class Test Methodology

Human Body Model HBM 1A (gt 250 V) JEDEC JESD22 A114-D

Charge Device Model CDM II (200 lt 500 V) JEDEC JESD22 C101-C

MA

G (d

B)

K F

acto

r

Min

imum

Noi

se F

igur

e (d

B)

Noi

se R

esis

tanc

e (O

hms)

5 CGH55030F2_P2 Rev 32

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2008-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Source and Load Impedances

Frequency (MHz) Z Source Z Load

5500 80 ndash j124 141 ndash j126

5650 87 - j131 147 ndash j117

5800 84 - j140 154 ndash j110

Note 1 VDD = 28V IDQ = 250 mA in the 440166 package

Note 2 Impedances are extracted from the CGH55030-TB demonstration

amplifier and are not source and load pull data derived from the transistor

CGH55030F2 and CGH55030P2 Power Dissipation De-rating Curve

Note 1 Area exceeds Maximum Case Operating Temperature (See Page 2)

D

Z Source Z Load

G

S

20

25

30

Pow

erD

issi

patio

n(W

)

CGH40025F CW Power Dissipation De-rating Curve

0

5

10

15

0 25 50 75 100 125 150 175 200 225 250

Pow

erD

issi

patio

n(W

)

Maximum Case Temperature (degC)

Note 1

6 CGH55030F2_P2 Rev 32

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2008-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

CGH55030-TB Demonstration Amplifier Circuit Bill of Materials

Designator Description Qty

R1 RES 116W 0603 1 562 OHMS 1

R2 RES 116W 0603 1 226 OHMS 1

C2 CAP 03pF +-005pF 0402 ATC600L 1

C16 CAP 33 UF 20 G CASE 1

C15 CAP 10UF 100V 10 X7R 1210 1

C8 CAP 10UF 16V TANTALUM 1

C9 CAP 04pF +-005pF 0603 ATC600S 1

C1 CAP 12pF +-01pF 0603 ATC600S 1

C6C13 CAP200 PF0603 PKG 100 V 2

C4C11 CAP 100pF+-5 0603 ATC600S 2

C5C12 CAP 39pF +-5 0603 ATC600S 2

C7C14 CAP 330000PF 0805 100V TEMP STABILIZ 2

J3J4 CONN SMA PANEL MOUNT JACK FLANGE 2

J1 HEADER RTgtPLZ 1CEN LK 5POS 1

- PCB RO4350B Er = 348 h = 20 mil 1

- CGH55030 1

CGH55030-TB Demonstration Amplifier Circuit

7 CGH55030F2_P2 Rev 32

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2008-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

CGH55030-TB Demonstration Amplifier Circuit Schematic

CGH55030-TB Demonstration Amplifier Circuit Outline

(CGH55030F)

8 CGH55030F2_P2 Rev 32

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2008-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Package S-Parameters for CGH55030(Small Signal VDS = 28 V IDQ = 250 mA angle in degrees)

Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22

500 MHz 0917 -15722 1262 9145 0018 756 0458 -15897

600 MHz 0916 -16192 1057 8733 0018 470 0465 -16093

700 MHz 0916 -16546 907 8378 0018 241 0472 -16219

800 MHz 0916 -16828 794 8058 0018 051 0478 -16304

900 MHz 0916 -17061 705 7764 0017 -112 0485 -16364

10 GHz 0916 -17260 633 7488 0017 -255 0493 -16409

11 GHz 0917 -17433 574 7225 0017 -382 0500 -16445

12 GHz 0917 -17588 524 6973 0017 -494 0508 -16477

13 GHz 0918 -17728 482 6730 0017 -595 0516 -16506

14 GHz 0918 -17857 446 6494 0017 -684 0525 -16536

15 GHz 0919 -17978 414 6265 0016 -763 0533 -16567

16 GHz 0919 17909 387 6041 0016 -831 0542 -16599

17 GHz 0920 17801 362 5822 0016 -890 0550 -16635

18 GHz 0921 17698 340 5607 0016 -939 0559 -16673

19 GHz 0921 17599 321 5397 0015 -977 0568 -16714

20 GHz 0922 17503 303 5190 0015 -1006 0577 -16759

21 GHz 0923 17409 287 4987 0015 -1024 0585 -16807

22 GHz 0924 17317 273 4787 0014 -1031 0594 -16857

23 GHz 0924 17227 260 4591 0014 -1027 0602 -16911

24 GHz 0925 17139 247 4397 0014 -1012 0610 -16967

25 GHz 0926 17051 236 4207 0014 -985 0619 -17026

26 GHz 0926 16965 226 4019 0013 -946 0626 -17088

27 GHz 0927 16879 216 3834 0013 -895 0634 -17152

28 GHz 0928 16793 208 3652 0013 -831 0642 -17217

29 GHz 0928 16708 199 3472 0013 -754 0649 -17285

30 GHz 0929 16624 192 3294 0013 -665 0656 -17355

32 GHz 0930 16454 178 2945 0012 -449 0670 -17500

34 GHz 0931 16285 166 2605 0012 -185 0683 -17650

36 GHz 0932 16114 155 2272 0012 119 0695 -17806

38 GHz 0933 15942 146 1946 0012 455 0706 -17966

40 GHz 0933 15768 138 1627 0012 808 0716 17870

42 GHz 0934 15591 131 1312 0012 1164 0726 17702

44 GHz 0934 15411 124 1003 0013 1508 0735 17530

46 GHz 0935 15228 118 697 0013 1826 0743 17356

48 GHz 0935 15041 113 395 0014 2109 0750 17178

50 GHz 0935 14849 108 096 0015 2350 0756 16997

52 GHz 0935 14653 104 -200 0016 2548 0762 16812

54 GHz 0935 14452 100 -496 0017 2702 0768 16624

56 GHz 0935 14245 097 -790 0018 2812 0773 16432

58 GHz 0934 14031 094 -1084 0020 2883 0777 16236

60 GHz 0934 13812 091 -1379 0021 2918 0781 16036

Download this s-parameter file in ldquos2prdquo format at httpwwwcreecomproductswireless_s-parametersasp

9 CGH55030F2_P2 Rev 32

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2008-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Product Dimensions CGH55030F (Package Type mdash 440166)

Product Dimensions CGH55030P (Package Type mdash 440196)

10 CGH55030F2_P2 Rev 32

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2008-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Disclaimer

Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet

to be accurate and reliable However no responsibility is assumed by Cree for any infringement of patents or other

rights of third parties which may result from its use No license is granted by implication or otherwise under any patent

or patent rights of Cree Cree makes no warranty representation or guarantee regarding the suitability of its products

for any particular purpose ldquoTypicalrdquo parameters are the average values expected by Cree in large quantities and are

provided for information purposes only These values can and do vary in different applications and actual performance

can vary over time All operating parameters should be validated by customerrsquos technical experts for each application

Cree products are not designed intended or authorized for use as components in applications intended for surgical

implant into the body or to support or sustain life in applications in which the failure of the Cree product could result

in personal injury or death or in applications for planning construction maintenance or direct operation of a nuclear

facility

For more information please contact

Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomwireless

Sarah MillerMarketing amp ExportCree RF Components9194075302

Ryan BakerMarketingCree RF Components9194077816

Tom DekkerSales DirectorCree RF Components9194075639

Page 5: CGH55030F, 30W, 5500-5800MHz, GaN HEMT by …propagation.ece.gatech.edu/ECE6361/project/Project02/Resource for... · mobility transistor (HEMT) ... R e v 3. 2 – A p r i l 2 0 1

5 CGH55030F2_P2 Rev 32

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2008-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Source and Load Impedances

Frequency (MHz) Z Source Z Load

5500 80 ndash j124 141 ndash j126

5650 87 - j131 147 ndash j117

5800 84 - j140 154 ndash j110

Note 1 VDD = 28V IDQ = 250 mA in the 440166 package

Note 2 Impedances are extracted from the CGH55030-TB demonstration

amplifier and are not source and load pull data derived from the transistor

CGH55030F2 and CGH55030P2 Power Dissipation De-rating Curve

Note 1 Area exceeds Maximum Case Operating Temperature (See Page 2)

D

Z Source Z Load

G

S

20

25

30

Pow

erD

issi

patio

n(W

)

CGH40025F CW Power Dissipation De-rating Curve

0

5

10

15

0 25 50 75 100 125 150 175 200 225 250

Pow

erD

issi

patio

n(W

)

Maximum Case Temperature (degC)

Note 1

6 CGH55030F2_P2 Rev 32

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2008-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

CGH55030-TB Demonstration Amplifier Circuit Bill of Materials

Designator Description Qty

R1 RES 116W 0603 1 562 OHMS 1

R2 RES 116W 0603 1 226 OHMS 1

C2 CAP 03pF +-005pF 0402 ATC600L 1

C16 CAP 33 UF 20 G CASE 1

C15 CAP 10UF 100V 10 X7R 1210 1

C8 CAP 10UF 16V TANTALUM 1

C9 CAP 04pF +-005pF 0603 ATC600S 1

C1 CAP 12pF +-01pF 0603 ATC600S 1

C6C13 CAP200 PF0603 PKG 100 V 2

C4C11 CAP 100pF+-5 0603 ATC600S 2

C5C12 CAP 39pF +-5 0603 ATC600S 2

C7C14 CAP 330000PF 0805 100V TEMP STABILIZ 2

J3J4 CONN SMA PANEL MOUNT JACK FLANGE 2

J1 HEADER RTgtPLZ 1CEN LK 5POS 1

- PCB RO4350B Er = 348 h = 20 mil 1

- CGH55030 1

CGH55030-TB Demonstration Amplifier Circuit

7 CGH55030F2_P2 Rev 32

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2008-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

CGH55030-TB Demonstration Amplifier Circuit Schematic

CGH55030-TB Demonstration Amplifier Circuit Outline

(CGH55030F)

8 CGH55030F2_P2 Rev 32

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2008-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Package S-Parameters for CGH55030(Small Signal VDS = 28 V IDQ = 250 mA angle in degrees)

Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22

500 MHz 0917 -15722 1262 9145 0018 756 0458 -15897

600 MHz 0916 -16192 1057 8733 0018 470 0465 -16093

700 MHz 0916 -16546 907 8378 0018 241 0472 -16219

800 MHz 0916 -16828 794 8058 0018 051 0478 -16304

900 MHz 0916 -17061 705 7764 0017 -112 0485 -16364

10 GHz 0916 -17260 633 7488 0017 -255 0493 -16409

11 GHz 0917 -17433 574 7225 0017 -382 0500 -16445

12 GHz 0917 -17588 524 6973 0017 -494 0508 -16477

13 GHz 0918 -17728 482 6730 0017 -595 0516 -16506

14 GHz 0918 -17857 446 6494 0017 -684 0525 -16536

15 GHz 0919 -17978 414 6265 0016 -763 0533 -16567

16 GHz 0919 17909 387 6041 0016 -831 0542 -16599

17 GHz 0920 17801 362 5822 0016 -890 0550 -16635

18 GHz 0921 17698 340 5607 0016 -939 0559 -16673

19 GHz 0921 17599 321 5397 0015 -977 0568 -16714

20 GHz 0922 17503 303 5190 0015 -1006 0577 -16759

21 GHz 0923 17409 287 4987 0015 -1024 0585 -16807

22 GHz 0924 17317 273 4787 0014 -1031 0594 -16857

23 GHz 0924 17227 260 4591 0014 -1027 0602 -16911

24 GHz 0925 17139 247 4397 0014 -1012 0610 -16967

25 GHz 0926 17051 236 4207 0014 -985 0619 -17026

26 GHz 0926 16965 226 4019 0013 -946 0626 -17088

27 GHz 0927 16879 216 3834 0013 -895 0634 -17152

28 GHz 0928 16793 208 3652 0013 -831 0642 -17217

29 GHz 0928 16708 199 3472 0013 -754 0649 -17285

30 GHz 0929 16624 192 3294 0013 -665 0656 -17355

32 GHz 0930 16454 178 2945 0012 -449 0670 -17500

34 GHz 0931 16285 166 2605 0012 -185 0683 -17650

36 GHz 0932 16114 155 2272 0012 119 0695 -17806

38 GHz 0933 15942 146 1946 0012 455 0706 -17966

40 GHz 0933 15768 138 1627 0012 808 0716 17870

42 GHz 0934 15591 131 1312 0012 1164 0726 17702

44 GHz 0934 15411 124 1003 0013 1508 0735 17530

46 GHz 0935 15228 118 697 0013 1826 0743 17356

48 GHz 0935 15041 113 395 0014 2109 0750 17178

50 GHz 0935 14849 108 096 0015 2350 0756 16997

52 GHz 0935 14653 104 -200 0016 2548 0762 16812

54 GHz 0935 14452 100 -496 0017 2702 0768 16624

56 GHz 0935 14245 097 -790 0018 2812 0773 16432

58 GHz 0934 14031 094 -1084 0020 2883 0777 16236

60 GHz 0934 13812 091 -1379 0021 2918 0781 16036

Download this s-parameter file in ldquos2prdquo format at httpwwwcreecomproductswireless_s-parametersasp

9 CGH55030F2_P2 Rev 32

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2008-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Product Dimensions CGH55030F (Package Type mdash 440166)

Product Dimensions CGH55030P (Package Type mdash 440196)

10 CGH55030F2_P2 Rev 32

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2008-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Disclaimer

Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet

to be accurate and reliable However no responsibility is assumed by Cree for any infringement of patents or other

rights of third parties which may result from its use No license is granted by implication or otherwise under any patent

or patent rights of Cree Cree makes no warranty representation or guarantee regarding the suitability of its products

for any particular purpose ldquoTypicalrdquo parameters are the average values expected by Cree in large quantities and are

provided for information purposes only These values can and do vary in different applications and actual performance

can vary over time All operating parameters should be validated by customerrsquos technical experts for each application

Cree products are not designed intended or authorized for use as components in applications intended for surgical

implant into the body or to support or sustain life in applications in which the failure of the Cree product could result

in personal injury or death or in applications for planning construction maintenance or direct operation of a nuclear

facility

For more information please contact

Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomwireless

Sarah MillerMarketing amp ExportCree RF Components9194075302

Ryan BakerMarketingCree RF Components9194077816

Tom DekkerSales DirectorCree RF Components9194075639

Page 6: CGH55030F, 30W, 5500-5800MHz, GaN HEMT by …propagation.ece.gatech.edu/ECE6361/project/Project02/Resource for... · mobility transistor (HEMT) ... R e v 3. 2 – A p r i l 2 0 1

6 CGH55030F2_P2 Rev 32

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2008-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

CGH55030-TB Demonstration Amplifier Circuit Bill of Materials

Designator Description Qty

R1 RES 116W 0603 1 562 OHMS 1

R2 RES 116W 0603 1 226 OHMS 1

C2 CAP 03pF +-005pF 0402 ATC600L 1

C16 CAP 33 UF 20 G CASE 1

C15 CAP 10UF 100V 10 X7R 1210 1

C8 CAP 10UF 16V TANTALUM 1

C9 CAP 04pF +-005pF 0603 ATC600S 1

C1 CAP 12pF +-01pF 0603 ATC600S 1

C6C13 CAP200 PF0603 PKG 100 V 2

C4C11 CAP 100pF+-5 0603 ATC600S 2

C5C12 CAP 39pF +-5 0603 ATC600S 2

C7C14 CAP 330000PF 0805 100V TEMP STABILIZ 2

J3J4 CONN SMA PANEL MOUNT JACK FLANGE 2

J1 HEADER RTgtPLZ 1CEN LK 5POS 1

- PCB RO4350B Er = 348 h = 20 mil 1

- CGH55030 1

CGH55030-TB Demonstration Amplifier Circuit

7 CGH55030F2_P2 Rev 32

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2008-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

CGH55030-TB Demonstration Amplifier Circuit Schematic

CGH55030-TB Demonstration Amplifier Circuit Outline

(CGH55030F)

8 CGH55030F2_P2 Rev 32

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2008-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Package S-Parameters for CGH55030(Small Signal VDS = 28 V IDQ = 250 mA angle in degrees)

Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22

500 MHz 0917 -15722 1262 9145 0018 756 0458 -15897

600 MHz 0916 -16192 1057 8733 0018 470 0465 -16093

700 MHz 0916 -16546 907 8378 0018 241 0472 -16219

800 MHz 0916 -16828 794 8058 0018 051 0478 -16304

900 MHz 0916 -17061 705 7764 0017 -112 0485 -16364

10 GHz 0916 -17260 633 7488 0017 -255 0493 -16409

11 GHz 0917 -17433 574 7225 0017 -382 0500 -16445

12 GHz 0917 -17588 524 6973 0017 -494 0508 -16477

13 GHz 0918 -17728 482 6730 0017 -595 0516 -16506

14 GHz 0918 -17857 446 6494 0017 -684 0525 -16536

15 GHz 0919 -17978 414 6265 0016 -763 0533 -16567

16 GHz 0919 17909 387 6041 0016 -831 0542 -16599

17 GHz 0920 17801 362 5822 0016 -890 0550 -16635

18 GHz 0921 17698 340 5607 0016 -939 0559 -16673

19 GHz 0921 17599 321 5397 0015 -977 0568 -16714

20 GHz 0922 17503 303 5190 0015 -1006 0577 -16759

21 GHz 0923 17409 287 4987 0015 -1024 0585 -16807

22 GHz 0924 17317 273 4787 0014 -1031 0594 -16857

23 GHz 0924 17227 260 4591 0014 -1027 0602 -16911

24 GHz 0925 17139 247 4397 0014 -1012 0610 -16967

25 GHz 0926 17051 236 4207 0014 -985 0619 -17026

26 GHz 0926 16965 226 4019 0013 -946 0626 -17088

27 GHz 0927 16879 216 3834 0013 -895 0634 -17152

28 GHz 0928 16793 208 3652 0013 -831 0642 -17217

29 GHz 0928 16708 199 3472 0013 -754 0649 -17285

30 GHz 0929 16624 192 3294 0013 -665 0656 -17355

32 GHz 0930 16454 178 2945 0012 -449 0670 -17500

34 GHz 0931 16285 166 2605 0012 -185 0683 -17650

36 GHz 0932 16114 155 2272 0012 119 0695 -17806

38 GHz 0933 15942 146 1946 0012 455 0706 -17966

40 GHz 0933 15768 138 1627 0012 808 0716 17870

42 GHz 0934 15591 131 1312 0012 1164 0726 17702

44 GHz 0934 15411 124 1003 0013 1508 0735 17530

46 GHz 0935 15228 118 697 0013 1826 0743 17356

48 GHz 0935 15041 113 395 0014 2109 0750 17178

50 GHz 0935 14849 108 096 0015 2350 0756 16997

52 GHz 0935 14653 104 -200 0016 2548 0762 16812

54 GHz 0935 14452 100 -496 0017 2702 0768 16624

56 GHz 0935 14245 097 -790 0018 2812 0773 16432

58 GHz 0934 14031 094 -1084 0020 2883 0777 16236

60 GHz 0934 13812 091 -1379 0021 2918 0781 16036

Download this s-parameter file in ldquos2prdquo format at httpwwwcreecomproductswireless_s-parametersasp

9 CGH55030F2_P2 Rev 32

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2008-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Product Dimensions CGH55030F (Package Type mdash 440166)

Product Dimensions CGH55030P (Package Type mdash 440196)

10 CGH55030F2_P2 Rev 32

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2008-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Disclaimer

Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet

to be accurate and reliable However no responsibility is assumed by Cree for any infringement of patents or other

rights of third parties which may result from its use No license is granted by implication or otherwise under any patent

or patent rights of Cree Cree makes no warranty representation or guarantee regarding the suitability of its products

for any particular purpose ldquoTypicalrdquo parameters are the average values expected by Cree in large quantities and are

provided for information purposes only These values can and do vary in different applications and actual performance

can vary over time All operating parameters should be validated by customerrsquos technical experts for each application

Cree products are not designed intended or authorized for use as components in applications intended for surgical

implant into the body or to support or sustain life in applications in which the failure of the Cree product could result

in personal injury or death or in applications for planning construction maintenance or direct operation of a nuclear

facility

For more information please contact

Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomwireless

Sarah MillerMarketing amp ExportCree RF Components9194075302

Ryan BakerMarketingCree RF Components9194077816

Tom DekkerSales DirectorCree RF Components9194075639

Page 7: CGH55030F, 30W, 5500-5800MHz, GaN HEMT by …propagation.ece.gatech.edu/ECE6361/project/Project02/Resource for... · mobility transistor (HEMT) ... R e v 3. 2 – A p r i l 2 0 1

7 CGH55030F2_P2 Rev 32

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2008-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

CGH55030-TB Demonstration Amplifier Circuit Schematic

CGH55030-TB Demonstration Amplifier Circuit Outline

(CGH55030F)

8 CGH55030F2_P2 Rev 32

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2008-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Package S-Parameters for CGH55030(Small Signal VDS = 28 V IDQ = 250 mA angle in degrees)

Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22

500 MHz 0917 -15722 1262 9145 0018 756 0458 -15897

600 MHz 0916 -16192 1057 8733 0018 470 0465 -16093

700 MHz 0916 -16546 907 8378 0018 241 0472 -16219

800 MHz 0916 -16828 794 8058 0018 051 0478 -16304

900 MHz 0916 -17061 705 7764 0017 -112 0485 -16364

10 GHz 0916 -17260 633 7488 0017 -255 0493 -16409

11 GHz 0917 -17433 574 7225 0017 -382 0500 -16445

12 GHz 0917 -17588 524 6973 0017 -494 0508 -16477

13 GHz 0918 -17728 482 6730 0017 -595 0516 -16506

14 GHz 0918 -17857 446 6494 0017 -684 0525 -16536

15 GHz 0919 -17978 414 6265 0016 -763 0533 -16567

16 GHz 0919 17909 387 6041 0016 -831 0542 -16599

17 GHz 0920 17801 362 5822 0016 -890 0550 -16635

18 GHz 0921 17698 340 5607 0016 -939 0559 -16673

19 GHz 0921 17599 321 5397 0015 -977 0568 -16714

20 GHz 0922 17503 303 5190 0015 -1006 0577 -16759

21 GHz 0923 17409 287 4987 0015 -1024 0585 -16807

22 GHz 0924 17317 273 4787 0014 -1031 0594 -16857

23 GHz 0924 17227 260 4591 0014 -1027 0602 -16911

24 GHz 0925 17139 247 4397 0014 -1012 0610 -16967

25 GHz 0926 17051 236 4207 0014 -985 0619 -17026

26 GHz 0926 16965 226 4019 0013 -946 0626 -17088

27 GHz 0927 16879 216 3834 0013 -895 0634 -17152

28 GHz 0928 16793 208 3652 0013 -831 0642 -17217

29 GHz 0928 16708 199 3472 0013 -754 0649 -17285

30 GHz 0929 16624 192 3294 0013 -665 0656 -17355

32 GHz 0930 16454 178 2945 0012 -449 0670 -17500

34 GHz 0931 16285 166 2605 0012 -185 0683 -17650

36 GHz 0932 16114 155 2272 0012 119 0695 -17806

38 GHz 0933 15942 146 1946 0012 455 0706 -17966

40 GHz 0933 15768 138 1627 0012 808 0716 17870

42 GHz 0934 15591 131 1312 0012 1164 0726 17702

44 GHz 0934 15411 124 1003 0013 1508 0735 17530

46 GHz 0935 15228 118 697 0013 1826 0743 17356

48 GHz 0935 15041 113 395 0014 2109 0750 17178

50 GHz 0935 14849 108 096 0015 2350 0756 16997

52 GHz 0935 14653 104 -200 0016 2548 0762 16812

54 GHz 0935 14452 100 -496 0017 2702 0768 16624

56 GHz 0935 14245 097 -790 0018 2812 0773 16432

58 GHz 0934 14031 094 -1084 0020 2883 0777 16236

60 GHz 0934 13812 091 -1379 0021 2918 0781 16036

Download this s-parameter file in ldquos2prdquo format at httpwwwcreecomproductswireless_s-parametersasp

9 CGH55030F2_P2 Rev 32

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2008-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Product Dimensions CGH55030F (Package Type mdash 440166)

Product Dimensions CGH55030P (Package Type mdash 440196)

10 CGH55030F2_P2 Rev 32

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2008-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Disclaimer

Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet

to be accurate and reliable However no responsibility is assumed by Cree for any infringement of patents or other

rights of third parties which may result from its use No license is granted by implication or otherwise under any patent

or patent rights of Cree Cree makes no warranty representation or guarantee regarding the suitability of its products

for any particular purpose ldquoTypicalrdquo parameters are the average values expected by Cree in large quantities and are

provided for information purposes only These values can and do vary in different applications and actual performance

can vary over time All operating parameters should be validated by customerrsquos technical experts for each application

Cree products are not designed intended or authorized for use as components in applications intended for surgical

implant into the body or to support or sustain life in applications in which the failure of the Cree product could result

in personal injury or death or in applications for planning construction maintenance or direct operation of a nuclear

facility

For more information please contact

Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomwireless

Sarah MillerMarketing amp ExportCree RF Components9194075302

Ryan BakerMarketingCree RF Components9194077816

Tom DekkerSales DirectorCree RF Components9194075639

Page 8: CGH55030F, 30W, 5500-5800MHz, GaN HEMT by …propagation.ece.gatech.edu/ECE6361/project/Project02/Resource for... · mobility transistor (HEMT) ... R e v 3. 2 – A p r i l 2 0 1

8 CGH55030F2_P2 Rev 32

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2008-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Package S-Parameters for CGH55030(Small Signal VDS = 28 V IDQ = 250 mA angle in degrees)

Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22

500 MHz 0917 -15722 1262 9145 0018 756 0458 -15897

600 MHz 0916 -16192 1057 8733 0018 470 0465 -16093

700 MHz 0916 -16546 907 8378 0018 241 0472 -16219

800 MHz 0916 -16828 794 8058 0018 051 0478 -16304

900 MHz 0916 -17061 705 7764 0017 -112 0485 -16364

10 GHz 0916 -17260 633 7488 0017 -255 0493 -16409

11 GHz 0917 -17433 574 7225 0017 -382 0500 -16445

12 GHz 0917 -17588 524 6973 0017 -494 0508 -16477

13 GHz 0918 -17728 482 6730 0017 -595 0516 -16506

14 GHz 0918 -17857 446 6494 0017 -684 0525 -16536

15 GHz 0919 -17978 414 6265 0016 -763 0533 -16567

16 GHz 0919 17909 387 6041 0016 -831 0542 -16599

17 GHz 0920 17801 362 5822 0016 -890 0550 -16635

18 GHz 0921 17698 340 5607 0016 -939 0559 -16673

19 GHz 0921 17599 321 5397 0015 -977 0568 -16714

20 GHz 0922 17503 303 5190 0015 -1006 0577 -16759

21 GHz 0923 17409 287 4987 0015 -1024 0585 -16807

22 GHz 0924 17317 273 4787 0014 -1031 0594 -16857

23 GHz 0924 17227 260 4591 0014 -1027 0602 -16911

24 GHz 0925 17139 247 4397 0014 -1012 0610 -16967

25 GHz 0926 17051 236 4207 0014 -985 0619 -17026

26 GHz 0926 16965 226 4019 0013 -946 0626 -17088

27 GHz 0927 16879 216 3834 0013 -895 0634 -17152

28 GHz 0928 16793 208 3652 0013 -831 0642 -17217

29 GHz 0928 16708 199 3472 0013 -754 0649 -17285

30 GHz 0929 16624 192 3294 0013 -665 0656 -17355

32 GHz 0930 16454 178 2945 0012 -449 0670 -17500

34 GHz 0931 16285 166 2605 0012 -185 0683 -17650

36 GHz 0932 16114 155 2272 0012 119 0695 -17806

38 GHz 0933 15942 146 1946 0012 455 0706 -17966

40 GHz 0933 15768 138 1627 0012 808 0716 17870

42 GHz 0934 15591 131 1312 0012 1164 0726 17702

44 GHz 0934 15411 124 1003 0013 1508 0735 17530

46 GHz 0935 15228 118 697 0013 1826 0743 17356

48 GHz 0935 15041 113 395 0014 2109 0750 17178

50 GHz 0935 14849 108 096 0015 2350 0756 16997

52 GHz 0935 14653 104 -200 0016 2548 0762 16812

54 GHz 0935 14452 100 -496 0017 2702 0768 16624

56 GHz 0935 14245 097 -790 0018 2812 0773 16432

58 GHz 0934 14031 094 -1084 0020 2883 0777 16236

60 GHz 0934 13812 091 -1379 0021 2918 0781 16036

Download this s-parameter file in ldquos2prdquo format at httpwwwcreecomproductswireless_s-parametersasp

9 CGH55030F2_P2 Rev 32

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2008-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Product Dimensions CGH55030F (Package Type mdash 440166)

Product Dimensions CGH55030P (Package Type mdash 440196)

10 CGH55030F2_P2 Rev 32

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2008-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Disclaimer

Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet

to be accurate and reliable However no responsibility is assumed by Cree for any infringement of patents or other

rights of third parties which may result from its use No license is granted by implication or otherwise under any patent

or patent rights of Cree Cree makes no warranty representation or guarantee regarding the suitability of its products

for any particular purpose ldquoTypicalrdquo parameters are the average values expected by Cree in large quantities and are

provided for information purposes only These values can and do vary in different applications and actual performance

can vary over time All operating parameters should be validated by customerrsquos technical experts for each application

Cree products are not designed intended or authorized for use as components in applications intended for surgical

implant into the body or to support or sustain life in applications in which the failure of the Cree product could result

in personal injury or death or in applications for planning construction maintenance or direct operation of a nuclear

facility

For more information please contact

Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomwireless

Sarah MillerMarketing amp ExportCree RF Components9194075302

Ryan BakerMarketingCree RF Components9194077816

Tom DekkerSales DirectorCree RF Components9194075639

Page 9: CGH55030F, 30W, 5500-5800MHz, GaN HEMT by …propagation.ece.gatech.edu/ECE6361/project/Project02/Resource for... · mobility transistor (HEMT) ... R e v 3. 2 – A p r i l 2 0 1

9 CGH55030F2_P2 Rev 32

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2008-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Product Dimensions CGH55030F (Package Type mdash 440166)

Product Dimensions CGH55030P (Package Type mdash 440196)

10 CGH55030F2_P2 Rev 32

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2008-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Disclaimer

Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet

to be accurate and reliable However no responsibility is assumed by Cree for any infringement of patents or other

rights of third parties which may result from its use No license is granted by implication or otherwise under any patent

or patent rights of Cree Cree makes no warranty representation or guarantee regarding the suitability of its products

for any particular purpose ldquoTypicalrdquo parameters are the average values expected by Cree in large quantities and are

provided for information purposes only These values can and do vary in different applications and actual performance

can vary over time All operating parameters should be validated by customerrsquos technical experts for each application

Cree products are not designed intended or authorized for use as components in applications intended for surgical

implant into the body or to support or sustain life in applications in which the failure of the Cree product could result

in personal injury or death or in applications for planning construction maintenance or direct operation of a nuclear

facility

For more information please contact

Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomwireless

Sarah MillerMarketing amp ExportCree RF Components9194075302

Ryan BakerMarketingCree RF Components9194077816

Tom DekkerSales DirectorCree RF Components9194075639

Page 10: CGH55030F, 30W, 5500-5800MHz, GaN HEMT by …propagation.ece.gatech.edu/ECE6361/project/Project02/Resource for... · mobility transistor (HEMT) ... R e v 3. 2 – A p r i l 2 0 1

10 CGH55030F2_P2 Rev 32

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2008-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Disclaimer

Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet

to be accurate and reliable However no responsibility is assumed by Cree for any infringement of patents or other

rights of third parties which may result from its use No license is granted by implication or otherwise under any patent

or patent rights of Cree Cree makes no warranty representation or guarantee regarding the suitability of its products

for any particular purpose ldquoTypicalrdquo parameters are the average values expected by Cree in large quantities and are

provided for information purposes only These values can and do vary in different applications and actual performance

can vary over time All operating parameters should be validated by customerrsquos technical experts for each application

Cree products are not designed intended or authorized for use as components in applications intended for surgical

implant into the body or to support or sustain life in applications in which the failure of the Cree product could result

in personal injury or death or in applications for planning construction maintenance or direct operation of a nuclear

facility

For more information please contact

Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomwireless

Sarah MillerMarketing amp ExportCree RF Components9194075302

Ryan BakerMarketingCree RF Components9194077816

Tom DekkerSales DirectorCree RF Components9194075639


Recommended