DFNWB2×2-6L-SA Power Management Transistors-MOSFET

CJMNT30 PNP Power Transistor with N-MOSFET

DFNWB2×2-6L-SA

FEATURES Ultra low collector-to-emitter saturation voltage

High DC current gain Small package DFNWB2x2-6L-SA

APPLICATIONS Charging circuit Other power management in portable equipments

MARKING: 30

Power Dissipation, Temperature and Thermal Resistance

PC Power Dissipation (Tc=25 ,Note1) 2.5 W

RθJA Thermal Resistance from Junction to Ambient 179 /W

Operation Junction and Storage Temperature Range TJ,Tstg -55~+150

TL Lead Temperature 260

0.7 W Power Dissipation PD

Equivalent circuit

V(BR)DSS/VR RDS(on)MAX ID/IC

20V360mΩ@4.5V

0.69A

-30V / - 2A

410mΩ@2.5V480mΩ@1.8V

MAXIMUM RATINGS (Ta=25 unless otherwise noted)

Symbol Parameter Value Unit

PNP Transistor

VCBO Collector-Base Voltage -30 V

VCEO Collector-Emitter Voltage -30 V

VEBO Emitter-Base Voltage -6 V

Collector Current-Continuous(Note1) -3 A IC

Collector Current-Continuous(Note2) -2 A

ICM Collector Current-Pulse(Note3) -6 A

N-MOSFET

VDS Drain-Source Voltage 20 V

VGS Gate-Source Voltage ±6 V

Drain Current -Continuous(Note1) 0.8 AID

Drain Current -Continuous(Note2) 0.69 A

IDM Drain Current - Pulse(Note3) 1.4 A

PIN1TOP VIEW BOTTOM VIEW

N3N1

N4N6

30YY

30 = Device code

YY=Code

1 Rev. - 2.0www.jscj-elec.com

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

ELECTRICAL CHARACTERISTICS

aT =25 unless otherwise specified

Parameter Symbol Test conditions Min Typ Max Unit

PNP Transistor Collector-base breakdown voltage V(BR)CBO IC=-1mA,IE=0 -30 V

Collector-emitter breakdown V(BR)CEO IC=-10mA,IB=0 -30 V

Emitter-base breakdown voltage V(BR)EBO IE=-100μA,IC=0 -6 V

Collector cut-off current ICBO VCB=-30V,IE=0 -0.1 μA

Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 μA

DC current gain hFE VCE=-2V, IC=-1A 100 300

Collector-emitter saturation voltage VCE(sat) IC=-2A,IB=-200mA -0.2 -0.4 V

Base-emitter saturation voltage VBE(sat) IC=-2A,IB=-200mA -1 -1.5 V

Base-emitter voltage VBE(on) VCE=-2V, IC=-500mA -0.7 -1 V

N-MOSFET

STATIC PARAMETERS Drain-source breakdown voltage V (BR)DSS VGS =0V, ID=250µA 20 V

Zero gate voltage drain current IDSS VDS =20V,VGS = 0V 1 µA

Gate-body leakage current IGSS VGS =±5V, VDS = 0V ±5 µA

Gate threshold voltage VGS(th) VDS =VGS, ID =250µA 0.45 0.75 1 V

VGS =4.5V, ID =0.55A 175 360 mΩ

VGS =2.5V, ID =0.45A 235 410 mΩ

VGS =1.8V, ID =0.35A 350 480 mΩDrain-source on-resistance RDS(on)

Diode forward voltage VSD IS=0.35A, VGS = 0V 0.5 1 V

DYNAMIC PARAMETERS (note 4) Input Capacitance Ciss 50 pF

Output Capacitance Coss 13 pF

Reverse Transfer Capacitance Crss

VDS =10V,VGS =0V,f =1MHz

8 pF

SWITCHING PARAMETERS (note 4) Turn-on delay time td(on) 22 ns

Turn-on rise time tr 80 ns

Turn-off delay time td(off) 700 ns

Turn-off fall time tf

VGS=4.5V,VDS=10V,

RL=10Ω,RGEN=6Ω, ID=0.5A

650 ns

Total Gate Charge Qg 1.15 nC

Gate-Source Charge Qgs 0.15 nC

Gate-Drain Charge Qgd

VDS =10V,VGS =4.5V,

ID =0.6A 0.23 nC

Note: 1、 Surface mounted on FR-4 board using 1 square inch pad size, 1oz copper

2、 Surface mounted on FR-4 board using minimum pad size, 1oz copper

3、 Pulse test: pulse width =300μs, duty cycle≤ 2%

4、 These parameters have no way to verify.

2www.jscj-elec.com Rev. - 2.0

-1 -10 -100 -1000-0.0

-0.2

-0.4

-0.6

-0.8

-1.0

-1.2

0 25 50 75 100 125 1500

200

400

600

800

1000

1200

-1 -10 -100 -1000-1

-10

-100

-1000

-1 -10 -100 -1000100

150

200

250

300

350

400

450

500

-0.1 -1 -101

10

100

-0 -2 -4 -6 -8 -10 -120

200

400

600

800

1000

1200

1400

1600

1800

2000

β=10

ICVBEsat ——

BASE

-EM

ITTE

R S

ATU

RAT

ION

VOLT

AGE

V B

Esa

t (V

)

COLLECTOR CURREMT IC (mA)

Ta=100

Ta=25

PC —— Ta

AMBIENT TEMPERATURE Ta ( )

CO

LLEC

TOR

PO

WER

DIS

SIPA

TIO

NP C

(m

W)

Ta=100

Ta=25

β=10

ICVCEsat ——

CO

LLE

CTO

R-E

MIT

TER

SA

TUR

ATI

ON

VOLT

AGE

V C

Esa

t (m

V)

COLLECTOR CURREMT IC (mA)

-3000-3000

IChFE ——

Ta=100

Ta=25

DC

CU

RR

EN

T G

AIN

h

FE

COLLECTOR CURRENT IC (mA)

COMMON EMITTERVCE= -2V

-20

f=1MHzIE=0/IC=0Ta=25

VCB/VEBCob/Cib ——

Cob

Cib

REVERSE VOLTAGE V (V)

CAP

ACIT

ANC

E

C

(pF)

500

-3000

-4.5mA

Static Characteristic

COMMON EMITTERTa=25

-5mA

-4mA

-3.5mA

-3mA

-2.5mA

-2mA

-1.5mA

-1mA

IB=-0.5mA

CO

LLE

CTO

R C

UR

RE

NT

I C

(m

A)

COLLECTOR-EMITTER VOLTAGE VCE (V)

PNP Transistor Typical Characteristics

3www.jscj-elec.com Rev. - 2.0

0.0 0.5 1.0 1.5 2.0 2.5 3.00

1

2

3

4

5

1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0100

200

300

400

500

600

100 200 300 400 500 600100

200

300

400

500

0.0 0.5 1.0 1.5 2.0 2.5 3.00

100

200

300

400

500

0.0 0.2 0.4 0.6 0.8 1.0 1.20.1

1

10

100

25 50 75 100 1250.5

0.6

0.7

0.8

0.9

1.0

VGS=5.5V

VGS=4.5V

VGS=2.5V

DR

AIN

CU

RR

EN

T

I D

(A)

DRAIN TO SOURCE VOLTAGE VDS (V)

Ta=25Pulsed

VGS=1.5V

Ta=100

GATE TO SOURCE VOLTAGE VGS (V)

ON

-RES

ISTA

NC

E

RD

S(O

N)

(mΩ

)

ID=550mA

Ta=25

VGS——RDS(ON)

Pulsed

VGS=1.8V

500

Ta=25Pulsed

VGS=4.5V

VGS=2.5V

ON

-RES

ISTA

NC

E

RD

S(O

N)

(mΩ

)

DRAIN CURRENT ID (mA)

ID——RDS(ON)

VGS=3.5V

DR

AIN

CU

RR

EN

T

I D

(mA)

GATE TO SOURCE VOLTAGE VGS (V)

VDS=16VPulsed

Ta=100

Ta=25

Transfer Characteristics

Ta=100Pulsed

SO

UR

CE

CU

RR

EN

T

I S

(mA)

SOURCE TO DRAIN VOLTAGE VSD (V)

Ta=25Pulsed

VSDIS ——

Output Characteristics

T HR

ESH

OLD

VO

LTAG

E

V TH

(V)

JUNCTION TEMPERATURE TJ ( )

ID=250uA

Threshold Voltage

NMOS Typical Characteristics

4www.jscj-elec.com Rev. - 2.0

Min. Max. Min. Max.A 0.700 0.800 0.028 0.031A1 0.000 0.050 0.000 0.002A2D 1.900 2.100 0.075 0.083E 1.900 2.100 0.075 0.083D1 0.800 1.000 0.031 0.039E1 0.700 0.900 0.028 0.035D2 0.200 0.400 0.008 0.016E2 0.700 0.900 0.028 0.035e1e2kb 0.250 0.350 0.010 0.014eL 0.250 0.350 0.010 0.014

0.650TYP. 0.026TYP.

0.650TYP. 0.026TYP.0.325TYP. 0.013TYP.0.200MIN. 0.008MIN.

Symbol Dimensions In Millimeters Dimensions In Inches

0.203REF. 0.008REF.

DFNWB2X2-6L-SA Package Outline Dimensions

DFNWB2X2-6L-SA Suggested Pad Layout

5www.jscj-elec.com Rev. - 2.0

NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein.

DFNWB2X2-6L Tape and Reel

6www.jscj-elec.com Rev. - 2.0