Company Introduction

Korea Instrument

2012

Agenda

Company Competitive EdgeProbe manufacturing using MEMS Fab

Bonding AutomationSI/PI simulation

Product and TechnologyMemory MEMS products

LSI products

Company IntroductionCompany Overview and Organization

Business History

Corporate Overview

Korea Instrument Co., Ltd.• Founded in 1996

• Located in Hwaseong City (30km from Seoul)

• CEO Choi Jun Young

• World Top class supplier of high-growth NAND Flash Probe

card solution with MEMS technology

• Supports both Memory and LSI product with leading edge

technology

Employee Status

Total 215• R&D 45• Manufacturing 100• QA & CS 32• Sales & MKT 12• Admin 26

- R&D Engineers portion : 21%

Organization Chart

CEOCEO

Manufacturing Div.Manufacturing Div.Sales & R&D Development Div.Sales & R&D Development Div.

SalesSales

Legal & PatentLegal & Patent

MarketingMarketing

ManufacturingManufacturing

AdminAdmin

QA & CSQA & CS

MechanicalMechanical

ElectronicsElectronics

LSI & MP dev.LSI & MP dev.

R&DR&D

Business History

1995~20001995~2000• Established KI (1996)• Set up SYSTEM LSI Division (1999)• Setup R&D center (2000)

2001~2008• Started Manufacturing of 12” Probe card for Flash memory (Korea 1st ) 2004• Launch One touch down Probe card (World 2nd) 2005• Setup San Jose office 2007• Started Manufacturing of MEMS card for NAND Flash 2008

Business History

2009• Started Mass production of Full MEMS Card for NAND Flash 2010• Extended MEMS Capacity up to 400K pins/m • Achieved #1 Supplier of MEMS probe card in World Top NAND Flash maker• Setup MEMS Fab for MEMS Probe manufacturing• Enhanced LSI card business and LSI Card product line-up (DDI, DC MEMS, Vertical)2011• Extended MEMS Capacity up to 700K pins/m• Launched Vertical Type card using MLC for Flipchip test• Started developing of MEMS Card for Flipchip test

KI Probe Card by Application

KI Card covers most of the application

Source: Silicon Valley Test Conference 2010/ KI Marketing

Plan to Launch DRAM burn-in card in 2011 1Q

Rank Company LogicSoC

(Array)DRAM NAND RF

DCParametric

DDI

1 MJC( 日 ) O O O O O O O

2 FormFactor( 美 ) O O O O O O

3 JEM( 日 ) O O O O O O O

4 MicroProbe( 美 ) O O O O O

KI O O O O O O

KI Probe Card by Technology

KI CoverageKI Coverage

* Under development

KI Probe Card Capability

PCB,MLCPCB,MLCPCB,MLCPCB,MLC

MEMS ProbeMEMS ProbeMEMS ProbeMEMS Probe

Probe card Probe card

AssemblyAssembly

Probe card Probe card

AssemblyAssembly

KI in House or FabliteKI in House or Fablite

OUTSOURCE OUTSOURCE

manufacturingmanufacturing

OUTSOURCE OUTSOURCE

manufacturingmanufacturing

INDEXINDEX

Probe card simulationProbe card simulation

(Power/Signal/3D)(Power/Signal/3D)

DesignDesign

- PCB/MLC/Probe - PCB/MLC/Probe

MEMS ProbeMEMS Probe

Fablite manufacturingFablite manufacturingQuality AssuranceQuality Assurance

Repair ServiceRepair Service

NeedleNeedleNeedleNeedle

Probe card ManufacturingProbe card Manufacturing

& Integration (& Integration (Memory, LSI)Memory, LSI)

Company competitive edgeProbe manufacturing using MEMS Fab

Bonding AutomationSI/PI simulation

Product and TechnologyMemory MEMS products

LSI products

Company IntroductionCompany Overview and History

Revenue Trend

Memory Product

S-MEMSS-MEMSPSJSPSJS H-MEMSH-MEMS

• Cantilever Type• Block type Pin assembly• W/Re-W needle• One Touch Down• Quick Delivery time• Low cost

• 2D MEMS Probe• Manual Bonding• One Touch Down• Longer life time• Higher MWBF*

• 2D MEMS Probe• Auto Laser Bonding• One Touch Down• Longer life time• Higher MWBF• Fine pitch

*MWBF: Mean Wafers between Failure

▷PSJS(New Cantilever)

Cantilever Blocks

• Perform Pre-insert the needles in the unique blocks• Assembles the Blocks• Enable Fast Delivery • Support One Touch Down• Low cost by using W-needle

▷S-MEMS

• 2D MEMS Probe with Rh Probe end and Ni-Co body • Manual Bonding• One Touch Down• Longer life time ~ 300K touch down• Application : NAND FLASH, ONENAND

▷H-MEMS

• 2D MEMS Probe with Rh Probe end and Ni-Co body • Auto Laser Bonding• One Touch Down• Longer life time ~ 300K touch down• Application: NAND FLASH, NOR FLASH, ONENAND, DRAM(WBI)

▷Memory Probe Card SpecificationPROPERITIES ITEMS PSJS S-MEMS H-MEMS Remarks

MECHANICAL

Probe Diameter 18~22um 10~15um

Scrub Mark Size ＜ 35um ≤20um 3mil OD

Probe Force 1.0g/mil 1.0g/mil 0.7g, 0.5g

Max Overdrive 200um 200um (Recommended <120um)

※ Min. Pad Pitch 75um 75um

Max. Array Size 12 ＂ 12”

Max. Parallel One Touch One Touch

Life Time 200,000 T/D ＜ <300,000 T/D

THERMAL ※ Test Temp. Range 40 ~ 125 -40 ~125

ELECTRICAL

Max. Current 1A <700mA

※ Contact Resistance 8Ω <0.5Ω

LeakageSignal : 80nA GND : 400nA

<50nA

▷ S-MEMS/H-MEMS Differences

▷ Delivery Lead Time

Case/Product S-MEMS H-MEMS

New Product 　

5 weeks 5.6 weeks• Preparation (3)• Ass’y, Insert (0.8)• Solder (0.4)• Mask (0.4)• QA (0.4)

• Preparation(2.6)• Micro Laser Bonding(2)• Ass’y & QA (1)

Repeat order 　

4 weeks 4.6weeks• Preparation (2)• Ass’y, Insert (0.8)• Solder (0.4)• Mask (0.4)• QA (0.4)

• Preparation(1.6)• Micro Laser Bonding(2)• Ass’y & QA (1)

*All lead time calculated based on 12,000 pins product.

DRAM 60um

FLASH 90um

Target

Pitch vs. Size

12” Wafer Full Contact

12” Wafer Full Contact

FLASHFLASH

2011. 1Q 2011. 4Q

Min

. Pad

Pit

ch(u

m)

60

90

110

Current

70

100

120

80

90um

85um

110um

DRAMDRAM

12” Size - IPCC

12” Size - MLC

8” Size - MLC

60um

▷H-MEMS Roadmap

LSI Product

▷ LSI Cantilever Probe card

Item Capability

Contact Force Customer SpecifiedPad Material Al, CuPCB size 137,230,250,260,280,305,330,440,480mmPlanarity +/-5umProbe Depth Customer Specified Overdrive 30~100umOperating temperature Room Temp.Probe Alignment +/-5umProbe Diameter >10um Probe Shape Flat, Radius, Min pitch 25/50 um staggered Probe Material Re-W, WLeakage level <500fA (Low leakage), <20nA (Others)

Key Specifications

• General Purpose• Support multi pin and multi parallel• Easy repair and Fast delivery• Apply to all major LSI application such as CIS, MCU, Logic and DC parametric

▷Fine pitch Probe Card for DDI

Key Specifications

• Ultra fine pitch, Staggered 14/28um• Contact Gold bumped area (min. 13x55um)• Apply to Display Driver IC wafer test

Item Capability

Probes (Max.) Over 3,000pins

Min. pad pitch 25um (In-line), 14 / 28um (Staggered)

Min. pad size 13 x 55um

Probe Material Pt, Pd alloy, Re-W

PCB size ~Φ350mm

Parallel 1x1, 2x1,2x2, 2x3

Test Frequency <1.8Gbps

Tester TS6700, T6371/72/73 ST6730(A), D750EX

• Fast delivery• Low costRecommend to Development or Mass production of Small pins product Started MP in 2010 3Q

• High Speed • Maximized # of pins Recommend to Mass produciton of high pins product Started MP in 2011 1Q

*KVW: KI Vertical card with Wiring** KVM KI Vertical Card with MLC

MEMS Probe with MLC (VM2) is under development

▷Vertical Card for Flipchip•Support Solder bumped or Cu-pillar Flipchip wafer test

▷Vertical Card Key Specifications

PCB

InterposerMLC

Pogo PIN

Item Capability

Contact Force Customer SpecifiedPad Material Solder Bumped, Al, Cu-pillar Scrub Mark <5umLeakage current <10nAHigh Speed 3GHzOverdrive 50~100umOperating temperature -20~85Probe Alignment <+/-10umProbe Diameter 10~100umProbe type Pogo pin(Crown or Flat Type)Min pitch 130umProbe Material Be-cu / SK-4 / SK41ATE system I-Flex, U-Flex, Tiger, T2000, D10Repair On-Site Pin-to Pin Repair

Wafer Side View Cross-section View

▷LSI MEMS card : DC

• For Low leakage DC test (Leakage level <500fA)• Using MEMS Probe with Rd Probe end.• Maximized Probe lifetime to ~1M touch down• Customer specified Contact force • Easy Repair by changing pin block

Wafer Side ViewTester Side View Probe Tip Array

▷LSI MEMS card : CIS

Top View Bottom View

• Support both Image & logic test • Using MEMS Probe with Rd Probe end.• Maximized Probe lifetime to ~1M touch down• Customer specified Contact force • Easy Pin block Repair• Qualification in 2011 1Q

Probe Tip ArrayWafer Side ViewTester Side View

▷LSI MEMS card Specification

Top View Bottom View

Item CIS DC TEST

Contact Force 1gf/mil (Customer Specified)

Pad Material Aluminum

Pitch 80um

Planarity 10umProbe Depth Customer Specified

Overdrive (Max.) 100umOperating temperature -20 ~85°C -20 ~150°C

Probe Alignment +/-5umProbe Diameter 10um+/-2um

Min pitch 80umProbe Material Nickel cobalt, Rhodium Probe

Leakage <20nA <500fA

Company competitive edgeProbe manufacturing using MEMS Fab

Auto Bonding System Simulation

Product and TechnologyMemory MEMS products

LSI products

Company IntroductionCompany Overview and History

Revenue Trend

Probe Manufacturing

Overview

3 월 11 월 1 월 3 월

2011 Key Milestone

1Q1Q

• Qualified NAND Flash probe tip

2Q2Q 3Q3Q 4Q4Q

• Begun MP stage 1 (200K pins/month)

• Complete Qualification of DRAM WBI probe tip

• Complete MP ramp up (500K pins /month)

• Started LSI probe tip development for Flipchip

• Complete Qualification of Flipchip probe tip

Auto Bonding System

Monitor

Laser ControllerLaser Beam Head

Side View CCD camera

Probe Tip Magazine

Work Table

MEMS Tip TrayIPCC

System Control Computer Keyboard

Loader side Welding side

Pad Align Camera

Control Panel

• Full Automatic high accuracy micro assembly system by laser soldering.

Key Map of the System

H-MEMS P/CardH-MEMS P/CardMass ProductionMass Production

Started Mass

production of 21nm NAND

flash probe card

Started Mass production of 32nm NAND flash probe card

CompletedAuto

Bonding System Setup

• Launched Rainbow P/Card for 12 Inch DRAM WBI

Production History

2009 Nov.2009 Nov.

2009 Dec.2009 Dec.

2010 March2010 March

2010 Oct2010 Oct

2011 April2011 April

• Capacity 700K pins /month

Simulation

Tester Main Board SubBoard

FPGABoard

FPGA

ZIFConnector Interposer MEMS

ProbeDUT(Die)

RelayBoard

Relay

FPGA BoardConnector

Relay BoardConnector

Probe Card

Tester DUT

td tr tf

tp

CL

Ass

um

pti

on

Ass

um

pti

on

Main Board ProbeHead

ZIFConnector Interposer Probe

Component Modeling for Signal Lines with Field Solver(2D or 3D)

Eye-Diagram

Signal Integrity

H

LV

Burst Current Flows

VCC

GND

H

L

Burst Current Flows

VCC

GND

V

These Inductance were screened out

< Layout about Decoupling Capacitor >

Decoupling CapacitorDecoupling Capacitor

Decoupling CapacitorDecoupling Capacitor

Noise = 70mV

Power Integrity

Cat. Part

Software

HFSS @ APDS

Q3D, Q2D @ APDS

SIWAVE @ APDS

Designer @ APDS

SI/PI

3D Drawing & Modeling

PCB Data Conversion

Modeling

Circuit Analysis

Measurement Equipment : TDR, Digital Oscilloscope

PI & SI Software

Needle

Wafer

fF

cFcF

fFz

y

1. Structure Analysis 2. Thermal Analysis

Parts & Assembly Simulation

3. Flow Simulation

Production Capacity

▷Memory

Product Type 2010 2011 2012

MEMS 300 700 1000

[Kpins/Month]

▷LSI

Product Type 2010 2011 2012

Cantilever 120 140 140

Vertical 20 40 60

2D MEMS 10 20 50

Total 150 200 250

[Kpins/Month]

Thank you!Thank you!