Advanced Large Area Electronic Devices and Integrated Circuits (ALADIN) Group Leader: Guglielmo Fortunato ([email protected]) The group has strong expertise in large area electronics (active matrix for flat panel display, sensors, organics electronics, etc.) with particular focus on thin film transistors (TFTs). This research activity has been supported, in the years, by different collaborations with companies like Philips, ST-Microelectronics, THALES and European projects as ECAM III and FlexiDis. The key frame-based research activity includes devices designing, fabrication and electrical testing. Devices and circuits analysis is performed by 2D-3D numerical simulations. Recently, the group activity is mainly focused on realization of low-temperature devices on polymeric flexible substrates, for applications in new generation of flat panel display and sensors. Two TFT fabrication technologies were developed, based on organic and inorganic materials. The principal inorganic semiconductor materials used in TFTs are amorphous, micro-crystalline and polycrystalline silicon. In particular, the group has developed a strong know-how on silicon excimer laser crystallization technique, being one of the groups pioneers in this field. In organic TFT field, the group has developed a innovative technology of buffer layers for devices based on pentacene, thus allowing electrical characteristics to be improved. AFM analysis for a thin film of pentacene thermally evaporated by RADAK source. A SEM image of a laser crystallized amorphous silicon film (a-Si). With the excimer laser irradiation technique it is possible to optimize the quality of polysilicon film, his uniformity and the mean grain size adjusting energy and shots number. Interface state density (Nss) deduced from quasi-static characteristics by Khun method for SiO 2 films deposited at room temperature by ECR-PECVD and annealed at increasing temperatures Temperature distribution in a TFT obtained by 3D simulation for self- heating effect analysis. via del Fosso del Cavaliere 100 00133 Roma (ITALY) Tel. : +39 06 4993 4594 Fax : +39 06 4993 4066 [email protected]Atomic force microscope (AFM) analysis of polysilicon grain size after the effects of an annealing at low temperature (<300°C) plus the excimer laser irradiation. 1.DEVICE PHYSICS 2.MATERIALS CHARACTERIZATION 2D numerical simulation for the impact ionization rate at the poly- Si TFT drain junction. These models are implemented in order to analyze the device electrical behavior and to improve his characteristics. 1mm Consiglio Nazionale delle Ricerche Institute for Microelectronics and Microsystems – Rome
Transcript
Advanced Large Area Electronic Devices and Integrated Circuits (ALADIN)
The group has strong expertise in large area electronics (active matrix for flat panel
display, sensors, organics electronics, etc.) with particular focus on thin film
transistors (TFTs). This research activity has been supported, in the years, by differentcollaborations with companies like Philips, ST-Microelectronics, THALES and
European projects as ECAM III and FlexiDis. The key frame-based research activity
includes devices designing, fabrication and electrical testing. Devices and circuits
analysis is performed by 2D-3D numerical simulations. Recently, the group activity is
mainly focused on realization of low-temperature devices on polymeric flexible
substrates, for applications in new generation of flat panel display and sensors. Two
TFT fabrication technologies were developed, based on organic and inorganic
materials. The principal inorganic semiconductor materials used in TFTs are
amorphous, micro-crystalline and polycrystalline silicon. In particular, the group hasdeveloped a strong know-how on silicon excimer laser crystallization technique,
being one of the groups pioneers in this field. In organic TFT field, the group has
developed a innovative technology of buffer layers for devices based on
pentacene, thus allowing electrical characteristics to be improved.
AFM analysis for a thinfilm of pentacenethermally evaporatedby RADAK source.
A SEM image of a laser crystallizedamorphous silicon film (a-Si). With theexcimer laser irradiation technique it ispossible to optimize the quality ofpolysilicon film, his uniformity and themean grain size adjusting energy andshots number.
Interface state density (Nss)deduced from quasi-staticcharacteristics by Khun method forSiO2 films deposited at roomtemperature by ECR-PECVD andannealed at increasingtemperatures
Temperature distribution in a TFTobtained by 3D simulation for self-heating effect analysis.
via del Fosso del Cavaliere 10000133 Roma (ITALY)Tel. : +39 06 4993 4594 Fax : +39 06 4993 [email protected]
Atomic force microscope (AFM)analysis of polysilicon grain size afterthe effects of an annealing at lowtemperature (<300°C) plus theexcimer laser irradiation.
1 . D E V I C E P H Y S I C S
2 . M A T E R I A L S C H A R A C T E R I Z A T I O N
2D numerical simulation for theimpact ionization rate at the poly-Si TFT drain junction. These modelsare implemented in order toanalyze the device electricalbehavior and to improve hischaracteristics.
1mm
Consiglio Nazionale delle Ricerche
Institute for Microelectronics and Microsystems – Rome
Low temperature (<350°C) Polysilicon TFTs fabricated on flexible substrates (polyimide).
Poly-Si TFTs output characteristics at increasing Vg for a device realized on plastic.Organic TFTs realization
based on pentacene filmsthermally evaporated onflexible plastic substratesencapsulated by parylene.
Organic common gate TFTstransfer characteristics for adevice with channel lengthL= 10mm.
4 . P O L Y C R Y S T A L L I N E S I L I C O N T F T s O N F L E X I B L E S U B S T R A T E S
3 . O R G A N I C T H I N F I L M T R A N S I S T O R S ( O T F T s )
5 . P O L Y - S I T F T s B A S E D C I R C U I T S O N F L E X I B L E S U B S T R A T E S
Institute for Microelectronics and Microsystems – Rome
Riviste JCR
1) L. Mariucci, P. Gaucci, A. Valletta, F. Templier and G. Fortunato, Hot Carrier Effects in p-Channel Polycrystalline Silicon Thin Film Transistors Fabricated on Flexible Substrates. Jpn. J. of Appl. Phys. Vol. 46, No. 3B, (2007) pp. 1299-1302
2) G. Lulli, M. Bianconi, M. Ferri, G. Fortunato, L. Mariucci, RBS-channeling analysis of ion-irradiation effects in heavily-doped Si:As, Nuclear Instruments and Methods in Physics Research B 257 (2007) pp. 253–256
3) V. Privitera, A. La Magna, C. Spinella, G. Fortunato, L. Mariucci, M. Cuscunà, C. M. Camalleri, A. Magrì, G. La Rosa, B. G. Svensson, E. V. Monakhov, and F. Simon, Integration of Melting Excimer Laser Annealing in Power MOS Technology, IEEE Trans. on Electron Devices, Vol 54 (2007) pp. 852-860
4) A.Valletta, P. Gaucci, L. Mariucci and G. Fortunato, Modelling velocity saturation and kink effects in p-channel polysilicon thin-film transistors, Thin Solid Films, vol. 515, (2007) pp.7417-7421
5) P. Gaucci, L. Mariucci, A. Valletta, A. Pecora and G. Fortunato, F. Templier, Electrical stability in self-aligned p-channel polysilicon Thin Film Transistors, Thin Solid Films,
vol. 515, (2007) pp.7571-7575
6) Maria Losurdo, M.M. Giangregorio, A. Sacchetti, P. Capezzuto, G. Bruno, L. Mariucci and Guglielmo Fortunato, INSIGHT INTO EXCIMER LASER CRYSTALLIZATION EXPLOITING ELLIPSOMETRY: EFFECT OF Si FILM PRECURSOR, Thin Solid Films, vol. 515, (2007) pp.7508-7512
7) A. Bonfiglietti, M. Cuscunà , M Rapisarda, A. Pecora, L. Mariucci, G. Fortunato, C. Caligiore, E. Fontana, S. Leonardi, F. Tramontana, Asymmetric fingered polysilicon p-channel Thin Film Transistors structure for kink effect suppression, Thin Solid Films, vol. 515, (2007) pp. 7433-7436
8) S. Cipolloni, L. Mariucci, A. Valletta, D. Simeone, F. De Angelis and G. Fortunato, Aging effects in high performance Pentacene Thin Film Transistors, Thin Solid Films, vol. 515 , (2007) pp. 7546-7550
9) A. Valletta, A. Bonfiglietti, M. Rapisarda, L. Mariucci, and G. Fortunato, S. D. Brotherton, Grain boundary evaluation in sequentially laterally solidified polycrystalline-silicon devices, J. Appl. Phys. Vol. 101, 094502 (2007)
10) A. Valletta, A. Bonfiglietti, M. Rapisarda, L. Mariucci, A. Pecora, G. Fortunato, and S. D. Brotherton,Grain Boundary Characterisation in Sequentially Laterally Solidified Polycrystalline-Silicon Thin Film Transistors, ECS Trans. Vol. 8, (2007) p. 211
11) A. La Magna, V. Privitera, G. Fortunato, M Cuscunà, B.G. Svensson, E. Monakhov, E. Kuitunen, J. Slotte, F. Tuomisto,Vacancy generation in liquid phase epitaxy of Si, Phys. Rev. B 75, 235201 (2007)
12) L. Maiolo, A. Pecora, M. Cuscunà and G. Fortunato, Thermal annealing effects on the interface state density of metal-oxide-semiconductor capacitors with electron cyclotron resonance plasma enhanced chemical vapor deposition Silicon dioxide, Thin Solid Films, vol. 515, (2007) pp. 7590-7593
P u b l i c a t i o n s - 2 0 0 7
Consiglio Nazionale delle Ricerche
Institute for Microelectronics and Microsystems – Rome
Riviste JCR
1) A. Valletta, L. Mariucci and G. Fortunato, Hot carrier-Induced Degradation of LDD Polysilicon TFTs, IEEE Trans. on El. Dev., 53, 43 (2006)
2) V. Teppati, V. Camarchia, S. Donati Guerrieri, M. Pirola, A. Ferrero, G. Ghione, M. Peroni, P. Romanini, C. Lanzieri, S. Lavanga, A. Serino, L. Mariucci, Fabrication and non-linear characterization of GaN HEMT on SiC and sapphire for high power applications, International Journal of RF and Microwave Computer-Aided Engineering, 16 , 70 (2006)
3) P. Gaucci, A. Valletta, L. Mariucci, G. Fortunato, and S. D. Brotherton, Numerical Simulation of Parasitic Resistance Effects in Polycrystalline Silicon TFTs, IEEE Trans. on El. Dev., 53, 573 (2006)
4) T. Toccoli, A. Pallaoro, N. Coppedè, and S. Iannotta, F. De Angelis, L. Mariucci, G. Fortunato, Controlling Field Effect Mobility in Pentacene Based Transistors by Supersonic Molecular Beam Deposition, Appl. Phys. Lett., 88, 132106 (2006)
5) F. De Angelis, L. Mariucci, S. Cipolloni, and G. Fortunato, Analysis of electrical characteristics of high performance Pentacene Thin-Film Transistors with PMMA buffer layer, Journ. of Non-Cryst. Solids, 352, 1765 (2006)
6) M. Cuscunà, G. Stracci, A. Bonfiglietti, A. di Gaspare, L. Maiolo, A. Pecora, L. Mariucci, G. Fortunato, Annealing temperature effects on the electrical characteristics of p-channel polysilicon thin film transistors, Journ. of Non-Cryst. Solids, 352, 1723 (2006)
7) G. Fortunato, V. Privitera, A. La Magna, L. Mariucci, M. Cuscunà, B.G. Svensson, E. Monakhov, M. Camalleri, A. Magrì, D. Salinas, F. Simon, Excimer Laser annealing for shallow junction formation in Si power MOS devices, Thin Solid Films, 504, 2 (2006)
8) F. De Angelis, S. Cipolloni, L. Mariucci and G. Fortunato, Aging effects in pentacene thin-film transistors: analysis of the density of states modification, Appl. Phys. Lett., 88, 193508 (2006)
9) A. Bonfiglietti, A. Valletta, M. Rapisarda, L. Mariucci, G. Fortunato, Effects of Fabrication Parameters on the Electrical Stability of Gate Overlapped LDD Polysilicon TFTs, Jpn. Journ. of Appl. Phys., 45, p. 4384 (2006)
10) A. Valletta, P. Gaucci, L. Mariucci, G. Fortunato, Modelling Velocity Saturation Effects in Polysilicon Thin-Film Transistors, Jpn. Journ. of Appl. Phys., 45, 4374 (2006)
11) M. Cuscunà, L. Mariucci, G. Fortunato, A. Bonfiglietti, A. Pecora and A. Valletta, Improved electrical stability in asymmetric fingered polysilicon Thin Film Transistors, Appl. Phys. Lett., 89, 123506 (2006)
12) A. Valletta, A. Moroni, L. Mariucci, A. Bonfiglietti, and G. Fortunato, Self-heating effects in polycrystalline silicon thin film transistors, Appl. Phys. Lett., 89, 093509 (2006)
13) A. Pecora, L. Maiolo, G. Fortunato, C. Caligiore, A comparative analysis of silicon dioxide films deposited by ECR-PECVD, TEOS-PECVD and Vapox-APCVD, Journ. of Non-Cryst. Solids, 352, 1430 (2006)
14) L. Maiolo, A. Pecora, and G. Fortunato N. D. Young, Low-temperature electron cyclotron resonance plasma-enhanced chemical-vapor deposition silicon dioxide as gate insulator for polycrystalline silicon thin-film transistors, J. Vac. Sci. Technol. A 24, 280 (2006)
15) L. Mariucci, A. Valletta, P. Gaucci, and G. Fortunato, Hot carrier effects in p-channel polycrystalline silicon thin film transistors, Appl. Phys. Lett., 89, 183518 (2006)
16) V. Privitera, P. Alippi, M. Camalleri, M. Cuscunà, G. Fortunato, A. La Magna, G. La Rosa, A. Magrì, L. Mariucci, E. Monakhov, D. Salinas, F. Simon, C. Spinella, B. G. Svensson, Perspectives and advantages of the use of excimer laser annealing for MOS technology, Nuovo Cimento C, 29, 369 (2006)
17) G. Fortunato, L. Mariucci and M. Cuscunà V. Privitera, A. La Magna, C. Spinella, Magr, M. Camalleri and D. Salinas, F. Simon, B. Svensson and E. Monakhov, Advanced gate stack architecture for excimer laser annealing integration in power MOS fabrication, Appl. Phys. Lett., 89, 253502 (2006)
18) L. Romano, A.M. Piro , V. Privitera , E. Rimini , G. Fortunato, B.G. Svensson , M. Foad, M.G. Grimaldi, Mechanism of de-activation and clustering of B in Si at extremely high concentration, Nuclear Instruments and Methods in Physics Research B 253, 5054 (2006)
19) A. La Magna, P. Alippi, I. Deretzis, V. Privitera,G. Fortunato, L. Mariucci, A. Magrì, E. Monakhov, B. Svensson, Ultra-shallow junction by laser annealing: Integration issues and modelling, Nuclear Instruments and Methods in Physics Research B 253, 1 (2006)
P u b l i c a t i o n s - 2 0 0 6
Consiglio Nazionale delle Ricerche
Institute for Microelectronics and Microsystems – Rome
Riviste JCR
1) G. Mannino,V. Privitera, A. La Magna, and E. Rimini, E. Napoletani, G. Fortunato and L. Mariucci, Depth distribution of B implanted in Si after excimer laser irradiation, Appl. Phys. Lett., vol. 86, 051909 (2005)
2) A. Pecora, L. Maiolo, A. Bonfiglietti, M. Cuscunà, F. Mecarini, L. Mariucci, G. Fortunato and N. D. Young, “Silicon dioxide deposite d by ECR-PECVD for low-temperature Si devices”, Microelectronics reliability, vol. 45, p. 879-882 (2005)
3) A. Valletta, L. Mariucci, A. Bonfiglietti,G. Fortunato, S. Brotherton, “Dopant and defect interactions in polycrystalline silicon thin-film transistors”, J. Appl. Phys. vol 97, p. 104515 (2005)
4) A. Di Gaspare, L. Mariucci, A. Pecora and G. Fortunato, “Stable p-channel polysilicon TFTs fabricated by laser doping technique” , Thin Solid Film, vol. 487, pp. 232-236 (2005)
5) A Valletta, L Mariucci, A Bonfiglieti, G Fortunato, S D Brotherton, “Channel Doping Effects in poly-Si TFTs”, Thin Solid Film, vol. 487, pp. 242-246 (2005)
6) G. Fortunato, A. Valletta, P. Gaucci, L. Mariucci, and S. D. Brotherton, “Short channel effects in polysilicon TFTs”, Thin Solid Film, vol. 487, pp. 221-226 (2005)
7) M. Cuscunà, L. Mariucci, G. Fortunato, A. Bonfiglietti, A. Pecora and A. Valletta, “Improved electrical stability in asymmetric fingered polysilicon Thin Film Transistors”, Thin Solid Film, vol. 487, pp. 237-241 (2005)
8) E. V. Monakhov, B. G. Svensson, M. K. Linnarsson, A. La Magna, C. Spinella, C. Bongiorno, V. Privitera, G. Fortunato, and L. Mariucci, “Enhanced boron diffusion in excimer laser preannealed Si”, Appl. Phys. Lett. 86, 151902 (2005)
9) F. De Angelis, S. Cipolloni, L. Mariucci and G. Fortunato, “High field effect mobility Pentacene Thin Film Transistors with Polymethylmetacrylate buffer layer”, Appl. Phys. Lett., vol. 86, p.203505 (2005)
10) E. V. Monakhov and B. G. Svensson, M. K. Linnarsson, A. La Magna, M. Italia, and V. Privitera, G. Fortunato, M. Cuscunà, and L. Mariucci, “Boron distribution in silicon after multiple pulse excimer laser annealing”, Appl. Phys. Lett., vol. 86, p. 081901 (2005)
11) A. Bonfiglietti, A. Valletta, P. Gaucci, L. Mariucci, and G. Fortunato, S. D. Brotherton, “Electrical characterization of directionally solidified polycrystalline silicon”, J. Appl. Phys. vol 98, p. 033702 (2005)
12) E. V. Monakhov_ and B. G. Svensson, M. K. Linnarsson, A. La Magna, M. Italia, and V. Privitera, G. Fortunato, M. Cuscunà, and L. Mariucci, “The effect of excimer laser pretreatment on diffusion and activation of boron implanted in silicon”, Appl. Phys. Lett., vol. 87, 192109 (2005)
13) E.V. Monakhov, B.G. Svensson, M.K. Linnarsson, A. La Magna, M. Italia, V. Privitera, G. Fortunato, M. Cuscunà, L. Mariucci, “Excimer laser annealing of B and BF2
implanted Si”, Materials Science and Engineering B, vol. 124–125 p. 232–234 (2005)
14) E.V. Monakhov, B.G. Svensson, M.K. Linnarsson, A. La Magna, M. Italia,V. Privitera, G. Fortunato, M. Cuscunà, L. Mariucci, “Boron distribution in silicon after excimer laser annealing with multiple pulses”, Materials Science and Engineering B, vol. 124–125 p. 228–231 (2005)
15) A. La Magna, P. Alippi, V. Privitera and G. Fortunato, “Role of light scattering in excimer laser annealing of Si”, Appl. Phys. Lett., 86, 161905 (2005)
16) Sean Whelan, Michael J. Kelly, John Yan and Guglielmo Fortunato, “Radiation damage annealing (thermal and laser) in Mg implanted GaN”, Phys. Stat. Sol. (c) 2, No. 7, 2472–2475 (2005)
P u b l i c a t i o n s - 2 0 0 5
Consiglio Nazionale delle Ricerche
Institute for Microelectronics and Microsystems – Rome
Consiglio Nazionale delle Ricerche
Institute for Microelectronics and Microsystems – Rome
