3

Applications / Notifications (for the Domestic Use in Japan)

By Establishment of this Equipment, you need to submit applications / noti�cations to the Prefecture. We support by creating the forms.・High Pressure Gas Production Noti�cation ・High Pressure Gas Production Facilities Change Noti�cation・Class 2 Storage Place Establishment Noti�cation ・Class 2 Storage Place Position Change Noti�cation

This Equipment is developed by AIST (National Institute of Advanced Industrial Science and Technology) and Meidensha.

Contact InformationEngineering Business Unit, Pure Ozone Generator Business Development Division

TEL. (03)3490-4279　　FAX. (03)3490-7855

Specifications in this catalog are subject to change without notice.The seller shall not be liable for incidental damages, consequentialdamages including loss of profit and special damages.

ThinkPark Tower, 2-1-1, Osaki, Shinagawa-ku, Tokyo, 141-6029 Japan

www.meidensha.com

Continuous supply of high purity ozone gas

Applications by �eld

OH

OH OH OH

OH radicals

Pure Ozone（O3） Ethylene（C2H4）

OH radicals

Substrate / film

OH OHOH OH

OH OHOH OH

OHOH

*OER：Ozone-Ｅthylene Ｒadicalgeneration technologyOverview

Through our intensive R&D activity,we have succeeded in generating OH radicals and transporting them e�ciently on any processed substrate, by mixing highly concentrated ozone and ethylene, and precisely controlling each partial pressure.

Our Pure Ozone Generator(POG) condenses ozone to 100% purity, which is stored as liquid using cryogenic freezers. The pure ozone can be delivered as a continuous supply of process gas during CVD, ALD, MBE or industrial materials fabrication where nitrogen or other constituents can create defects.

Deposition using Ozone-Ethylene Radicals(OER*)

Always keep the system safe by operating under the condition of high purity and low pressure.

Safety and Quality

Safety Features • Explosion-proof Design • Temperature/pressure control with the fail-safe system by power supply. • Has an emergency purge mechanism to dilute ozone in the process gas line and discharge residual ozone within the apparatus in times of power outage.

• Can be switched o� manually by an EMO(emergency o�) switch in the event of any anomaly.• Even in the unlikely event of an explosion, the structure is designed to prevent any mechanical damage to external

equipment by having the liquefaction chamber housed within a vacuum-insulated stainless-steel container.• The liquid ozone cooling unit has su�cient heat capacity for the amount of accumulated liquid ozone so as to reduce

the risk of rapid vaporization by energy from outside such as vibration, which otherwise is a risk factor for explosive decomposition of ozone.

Certi�cations and Quality Assurance• The Pure Ozone Generator has been certi�ed according to SEMI-S2, UL, NFPA and CE standards.• A third-party tracer gas test has been performed to ensure safety from gas leaks.

0

0.2

0.4

0.6

0.8

1

1.2

0 10 20 30 40 50 60 70 80 90 100

Ozone concentration dependence in OER

Ozone concentration (%)

OH

radi

cal g

ener

atio

n effi

cienc

y

Nor

mal

ozo

nize

r

Pure

ozo

ne

Ozonizer

100%Liquid Ozone

Pure Ozone Gas continuous supply

Vacuumop

cl

cl

cl

cl

cl

Fee

d

Sta

ndby

Cha

rge

cl op opop

Chiller Chiller ChillerOxygen

tank

O₂

Field Use Applied technology Expected effect

Environmental Protection

Water treatment・Pure ozone treatment

Sterilization, deodorization

Recycling Carbon fiber decomposition

Medicine New drug manufacturing(Biotech) ・Pure ozone treatment Organic synthesis

Film

Organic film

・OER process(low temperature)・OER-CVD process(low temperature)・OER-ALD process(low temperature)

Low-temperature thin film deposition ,barrier layer

Organic EL Removal, adhesion, thin film deposition

Food packaging/medical devices Sterilization, barrier layer

Solar cells Barrier layer

Component Manufacture

Electrodes・OER process Oxide film, surface modification

Carbon nanotube

SemiconductorMask manufacturing process

・Pure ozone treatment・OER process

Carbon contamination removal

Pre-process Oxide film, Carbon contamination removal

Advanced technology

MEMS ・OER process(low temperature) Cleaning and seasoning

Molecular beam epitaxy (MBE) ・Pure ozone treatment Pure oxide source

Printed electronics・OER process(low temperature)・OER-CVD process(low temperature)・OER-ALD process(low temperature)

Surface modification, adhesion, low-temperature thin film deposition

1 2

Formation of high quality metal oxide thin �lms can be formed by using pure ozone (high purity ozone) gas as oxygen source.Superiority of using pure ozone (high purity ozone) as oxygen source has been beginning to introduced in the international market.

Example■ Growth of high quality metal oxide thin �lms

◆ Results

No heating needed and no physical damage introduced by generated OH radicals.High throughput process thanks to no vacuum standby time.High uniformity in the substrate due to proprietary shower head structure and gas �ow sequence.

◆ Results

High-speed ashing at low temperatureHighly ion implanted photoresist can be removed without popping.

◆ ResultsHydrophilic termination into whole surface of the �berMore than 1 month duration of the terminationNo thermal and physical damages con�rmed

◆ Results

Low pressure & highly-reactive source makes in-situ real-time (24/7) cleaning possible.(A feat which low concentration O3 never achieved.)Just removing C contamination without growing oxidation layer and keeping re�ectivity of mirrors.No mask and mirror damage thanks to NOx free O3. Even low-pressure supply in ultra-high vacuum (UHV), highly concentrated ozone works as a su�cient oxidizer to ash carbon contamination.

◆ Results

Before processing After processing

Waterdroplet

Waterpenetration

OER process （Room temperature～150℃）

OER-ALD process（Room temperature ～150℃） Al2O3 film deposition on PEN film

（Film thickness： 40 nm）

OER-CVD process（Room temperature ～150℃）

OER process（Room temperature ～150℃）

Before processing After processing

◆ The example of the oxygen source for MBE(Molecular Beam Epitaxy)

■ Film deposition at low temperature◆ The example of high-barrier �lm

■ Film deposition on semiconductor substrate◆ The example of SiO2 �lm deposition on swallow trench (Aspect ratio 1:15)

■ Cleaning/Removal(Ashing)◆ The example of resist ashing of semiconductor production process (high ion implantation)

■ In-situ cleaning◆ The example of In-situ cleaning process after EUV lithography

■ Surface modi�cation◆ The example of the surface hydrophilization of carbon �ber

Provided by Kawasaki Laboratory The University of Tokyo

SiO2 �lm can be deposited on sidewall and trench-bottom ◆ Result

OH radicals

EthylenePure Ozone

OH OH OH

OH OH OH

OH OH

H2O CO2 CO2

Ashing

Resist

Substrate / Film

H2O H2O

μm

μm

①

②

50 μm

200 nm

200 nm

③TMA(Al(CH3)3)

3 4

Device con�guration（Continuous supply type) Dimensions (Except for projection part) [Unit：mm]

Specification

■ Batch type

■ Continuous supply type

※

※

※

EERS

TOFF

DIPP

TR

EON

EERS

TOFF

DIPP

TR

EON

17001950

900 900

FRONT SIDE

Weight: 545 kg (Weight of the compressor for cooling is included.)

Note:•The refrigerator compressor is built-in.•The maintenance space is required.

Note:•The maintenance space for each unit is required.

2250

2000

600 750 900

1590

580 750

FRONT

FRONT

SIDE

SIDE

Weight: 230 kg Refrigerator compressor

(Complementary equipment)

Weight: 490 kg Weight: 470 kg

Type Batch type（Standard） Continuous supply type Continuous supply type(Auto flushing function*5 available)

Unit configurations

Rating

Accumulation

part

Number of Ozone Chambers 1 2 3　　　　　　　Maximum Ozone accumulation

volume*¹ [cc]

8000/unit

8000/chamber

16000/unit

16000/chamber

32000/unit

16000/chamber

32000/unit

16000/chamber

Liquid Ozone Concentration [%] ≓100 ≓100 ≓100 ≓100

Supply

part

Continuous Supply Rate [sccm] × × 100*8 100

Maximum Supply Rate[sccm] 100 300 300 300

Ozone Gas Concentration [%] More than 90 More than 90 More than 90 More than 90

Maximum supply time[min]*2 80 50 100 160

International Quality &

Safety StandardsSEMI-S2, UL, NFPA, CE

Conforms to

standard

Conforms to

standardConforms to standard Certified

Safety & Usage

Features　

Negative Pressure Control*3 ○ ○ ○ ○Emergency Purge Mechanism*⁴ ○ ○ ○ ○Manual Flushing*⁶ ○ ○ ○ ○Auto Flushing*⁷ × × × ○

*1 : Volume calculated in standard state conditions: (0℃ , 1 atm)

*2 : Time calculated at maximum supply rate.*3 : Generation of ozone gas permitted only when the enclosure pressure is negative to atmospheric pressure.*4 : Stored liquid ozone is purged from the system when abnormalities are detected.

*5 : Automatically remove the impurities accumulated in the ozone chamber while still in operation.*6 : Flushing operation of ozone chamber will be carried out only when device is stopped.*7 : Device automatically flushes itself out while still in operation.*8 : Device must be stopped for flushing every 5 days.

5 6

3

Applications / Notifications (for the Domestic Use in Japan)

By Establishment of this Equipment, you need to submit applications / noti�cations to the Prefecture. We support by creating the forms.・High Pressure Gas Production Noti�cation ・High Pressure Gas Production Facilities Change Noti�cation・Class 2 Storage Place Establishment Noti�cation ・Class 2 Storage Place Position Change Noti�cation

This Equipment is developed by AIST (National Institute of Advanced Industrial Science and Technology) and Meidensha.

Contact InformationEngineering Business Unit, Pure Ozone Generator Business Development Division

TEL. (03)3490-4279　　FAX. (03)3490-7855

Specifications in this catalog are subject to change without notice.The seller shall not be liable for incidental damages, consequentialdamages including loss of profit and special damages.

ThinkPark Tower, 2-1-1, Osaki, Shinagawa-ku, Tokyo, 141-6029 Japan

www.meidensha.com

Continuous supply of high purity ozone gas

MB64-3059E As of Dec., 20192019-12ME（3.4L）0.5L