CoolCAD Electronics, LLCSiC Fabrication Overview

Zeynep Dilli, Akin Akturk, Neil Goldsman,

Aysanew Abate, Mitchell Gross

We gratefully acknowledge the support of NASA, PowerAmerica, ARL

CoolCAD ElectronicsSiC Fabrication Portfolio

We have

• Designed, • Laid out, • Developed fabrication processes for, • Fabricated

a wide variety of SiC devices, including:

• Linear UV Photodiodes• Linear UV Photodiode Arrays• Avalanche UV Photodiodes• 3-T Pixels• MOSFETs• MOSCAPs• Passive Load Amplifiers• Active Load Amplifiers• CMOS Circuitsand more.

Linear UV Photodiodes

Linear UV Photodiode Modeling

3.2

eV

4.3

7eV

6.3

eV 4.2

eV6.1

7eV

6.4

9eV

4.4

8eV

A L M Γ A H K Γ M K

5.0

2eV

-0.2

0

0.2

0.4

0.6

0.8

1

3 4 5 6 7

Energy (eV)

Normalized Responsivity

3.2eV

4.36eV

5.07eV

Linear UV Photodiode Arrays

Miniaturization Yield Pixel Count Isolation

Avalanche UV Photodiodes

Avalanche UV Photodiodes _ Operation

3-T Pixels

SiC ICs

MOSFETs

0.00E+00

5.00E-05

1.00E-04

1.50E-04

2.00E-04

2.50E-04

0 1 2 3 4 5 6 7 8

Id (

A)

Vd (V)

400 C

40/10

10/40

Amplifiers

SiC MOSFET Common Source

AmplifierPassive Load Differential

Amplifier

Silicon Carbide Device Fabrication

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CoolCAD’s SiC fabrication and rad testing efforts

• Layout Design based on custom process rules.

• Process Design Kit development for various processes

• Lithography mask designs and fabrication

• Complementary electrical simulation tools development:

CoolSPICE.

• Process methods developed for:

• Ion Implantation / Dopant Activation

• Contact Deposition / Contact Anneal

• Oxide growth / deposition

• Etching / passivation

• Silicon carbide, silicon, germanium, etc. fabrication at the Univ. of Maryland’s Maryland Nanocenter FabLab.

• Silicon carbide high temperature complementary processing at CoolCAD’s facility.

• Silicon carbide in-house developed recipes for dopant activation, oxidation, etching, metal deposition, contact annealing, etc.

• Silicon carbide Integrated Circuit components fabrication.

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CoolCAD SiC CMOS: IV CompsGeneration 2

40mm/20mm 40mm/20mm

Raytheon / Scotland SiC

CMOS process

CoolCAD SiC CMOS process:

We offer a competitive higher

performance US based SiC foundry

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CoolCAD SiC CMOS: Hi-TempGeneration 2

15

CoolCAD SiC CMOS: Heavy Ion Tests

Generation 2

Au Normal incident,

Fluence ~2e6 ions/cm2

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CoolCAD SiC CMOS: Heavy Ion Tests

Generation 2RUN 5 Au

Normal, T=0, Fluence ~2e5 ions/cm2, Average flux ~ 291 ions/cm2/s, Dose ~ 277 rad

PREPOST5

PREPOST5

PREPOST5

PREPOST5

PREPOST5

PREPOST5

DURING RADIATION

EN = 3.5MV/cm EP=-3.5MV/cm

IGNIGP

NM

OS

PM

OS

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CoolCAD SiC CMOS: Heavy Ion TestsAu Normal, T=0, Fluence ~2e5 ions/cm2, Average flux ~ 291 ions/cm2/s, Dose ~ 277 rad