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A Rigorous Simulation Based Study of Gate
Misalignment Effects in Gate Engineered
Double-Gate (DG) MOSFEs
A THESIS SUBMITTED IN PARTIAL FULFILLMENT OF
THE REQUIREMENTS FOR THE DEGREE OF
Master of TechnologyIn
VLSI Design and EmbeddedSystems
By:
SANTUNU SARANGI
Roll No. 211EC2111
Department of Electronics and Communication EngineeringNational Institute of Technology
Rourela! "rissa! India#$%&
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I
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A Rigorous Simulation Based Study of Gate
Misalignment Effects in Gate Engineered
Double-Gate (DG) MOSFEs
A THESIS SUBMITTED IN PARTIAL FULFILLMENT OF
THE REQUIREMENTS FOR THE DEGREE OF
Master of TechnologyIn
VLSI Design and EmbeddedSystems
By:
SANTUNU SARANGI
Roll No. 211EC2111
!nder t"e guidance of
Prof. (Dr.) P.K. TIWARI
Department of Electronics and Communication EngineeringNational Institute of Technology
Rourela! "rissa! India#$%&
II
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This is to certify that the Thesis Report entitled 'A Rigorous Simulation Based S To the best of my no+ledge! the matter embodied in the thesis has not been submi
3
DEPARTMENT OF ELECTRONICS AND
COMMUNICATION ENGINEERING
NATIONAL INSTITUTE OF TECHNOLOGY, ROURKELA
ORISSA, INDIA-769008
#ER$F$#AE
%lace& Rour'ela
Date& rd
une* +,%rof. (Dr.) %. /. $0AR$
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4
Dep!
"# E!C!E
N$%"&$'
I&(%)e "#
Te*+&"'"
R")./e'$ 769008
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ACKNOWLEDGEMENT
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*$.ee. $&2 ")'""/ #". +e #)).e! I *"&(%2e. % ""2 #".)&e " +$5e " $& "pp".)&% "
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This thesis is dedicated to
the li.ing memories of my fatherLate 1rundaban Sarangi
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TABLE OF CONTENTS
ACKNOLEDGEMENT !!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!! I
INDE@ OF FIGUREG!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!>
INDE@ OF TA:LES! !!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!! >III
ACRONYMS !!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!! I@
A:STRACT!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!! @I
% INTRODUCTION!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!%
%/% M"S2ET and its scaling3 4 5istorical 6erspecti.e!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!%
%/# ".er.ie+ of M"S2ETs!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!#
%/& M"S2ET operation!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!7
%/&/% Metal "8ide Semiconductor structure!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!7
%/&/# M"S2ET structure and channel formation!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!7
%/7 M"S2ET scaling!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!9
%/: Reasons for M"S2ET scaling!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!;
%/9 Scaling problems!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!;
%/9/% 5igher subthreshold conduction!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!<
%/9/# Increased gate-o8ide leaage!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!%$
%/9/& Increased =unction leaage!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!%$%/9/7 Lo+er output resistance!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!%%
%/9/: Lo+er transconductance!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!%%
%/9/9 Interconnect capacitance!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!%%
%/9/; 5eat production!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!%%
%/9/> 6rocess .ariations!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!%#
%/9/< Modeling challenges!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!%#
%/; Technology 1oosters3 Solution to Scaling!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!%#
%/;/% Channel Engineering Techni*ues!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!%#
%/;/# ?ate Engineering Techni*ues!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!%7
%/> Thesis "b=ecti.es!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!%9
%/< Moti.ation!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!! %9
%/%$ Thesis "utline!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!! %;
# LITERATURE REVIEW!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!%>
#/% Double gate M"S2ETs!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!%>
#/# ?ate engineered D? M"S2ETs!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!#$
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>II
#/& 4d.antages of D? M"S2ETs!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!#%
#/7 Challenges of D? M"S2ETs!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!#%
#/: ?ate misalignment of D? M"S2ETs!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!#%
#/9 E@ect of misalignment3 past +ors!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!##
& SIMULATION METHODOLOGY!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!#9
&/% Introduction!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!! #9
&/# Structure De)nition!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!#9
&/#/% Asing The Command Language To De)ne 4 Structure!!!!!!!!!!!!!!!!!!!!!!!!!!!!!#9
&/& De)ning material parameters and models!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!#<
&/&/% Specifying Contact Characteristics!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!#<
&/&/# Specifying Material 6roperties!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!
Semiconductor! Insulator! or Conductor!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!
7 DEVICE STRUCTURE & SIMULATION!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!&:
7/% The De.ice Structure!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!&:
7/# Model used for simulation!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!&9
: RESULTS & DISCUSSIONS!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!&>
:/% Introduction!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!! &>
:/# Surface potential !!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!&>
:/& Threshold .oltage!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!77
:/7 Drain induced barrier lo+ering BDI1L!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!7:
:/: Sub threshold slope!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!7;
:/9 Sub threshold current!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!7>
:/; Ma8imum drain current!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!:%
:/> Tranconductance!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!:#
:/< "utput Conductance!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!:&
9 CONCLUSION!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!! :;
9/% 6erformance 4nalysis!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!:;
9/# Scope of 2uture +or!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!:;
RE2ERENCE/!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!! :>
6A1LIC4TI"NS/!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!! 97
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8
INDEX OF FIGURES
F%).e !!B F%.( IC #$.%*$e2 ;$ L$(( 2e5e'"pe& .")p $ F$%.*+%'2 C".p! 4 !!!!!!!!!!!!!!!!!!!!! !#
F%).e !!B T.$&(%(". I&e.$%"& "& C+%p 2%(p'$%& M"".e( L$1! !!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!#
F%).e !!B C."(( (e*%"&$' 5%e1 "# *"&5e&%"&$' )'/ MOSFET 7 !!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!&
F%).e !3!B Me$'-"%2e-(e%*"&2)*". (.)*).e( "& p-pe (%'%*"& 7 !!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!7
F%).e !3!B C+$&&e' #".$%"& %& &-*+$&&e' MOSFET 7 !!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!:
F%).e !6!B S+.%&/%& $e 'e&+ 1%+ "# (*$'%&! $.%$%"& "# $*/ ().#$*e p"e&%$' 1%+ '$e.$' 2%.e*%"& "# SMDG =
MOSFET (.)*).e! !!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!! &<
F%).e !!B >$.%$%"& "# #."& ().#$*e p"e&%$' 1%+ '$e.$' 2%.e*%"& "# SMDG =
MOSFET (.)*).e! !!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!! &<
F%).e !!3B >$.%$%"& "# $*/ ().#$*e p"e&%$' 1%+ '$e.$' 2%.e*%"& "# DMDG ,
φ M = 4!6 e> = MOSFET (.)*).e $.%$%"& "# #."& ().#$*e p"e&%$' 1%+ '$e.$' 2%.e*%"& "# DMDG ,
φ M = 4!6 e> = MOSFET (.)*).e $.%$%"& "# $*/ ().#$*e p"e&%$' 1%+ '$e.$' 2%.e*%"& "# TMDG ,
φ M = 4!6 e> ,φ M 3 = 4!4e>
= MOSFET (.)*).e !!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!7:
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9
F%).e !3!B T+.e(+"'2 5"'$e 5$.%$%"& 1%+ $e %($'%&e& #". SMDG < φ MA = 4!8 e> =,
DMDG ,φ M = 4!6 e> = $&2 TMDG ,φ M = 4!6 e> ,φ M 3 = 4!4e>
= MOSFET (.)*).e( #". V ds = > !!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!7:
F%).e !4!B DI:L 5$.%$%"& 1%+ $e %($'%&e& "# SMDG =, DMDG <
φ M A = 4!8 e> ,φ M = 4!6 e> = $&2 TMDG ,φ M = 4!6 e> ,φ M 3 = 4!4 e> = MOSFET (.)*).e(
!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!
7;
F%).e !!B S)+.e(+"'2 ('"pe 5$.%$%"& 1%+ $e %($'%&e& SMDG =, DMDG <
φ M A = 4!8 e> ,φ M = 4!6 e> = $&2 TMDG ,φ M = 4!6 e> ,φ M 3 = 4!4 e> =MOSFET (.)*).e( !!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!7>
F%).e !6!B S)+.e(+"'2 2.$%&-*)..e& 5$.%$%"& 1%+ $e 5"'$e #". SMDG =
MOSFET (.)*).e! !!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!! :$
F%).e !6!B S)+.e(+"'2 2.$%&-*)..e& 5$.%$%"& 1%+ $e 5"'$e #". DMDG
φ M = 4!6 e> = MOSFET (.)*).e φ M 3 = 4!4 e> = MOSFET (.)*).e
,φ M 3 = 4!4e>
= MOSFET (.)*).e(!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!:%
F%).e !8!B M$%) .$&(*"&2)*$&*e = $&2 TMDG ,φ M = 4!6e>
,φ M 3 = 4!4e>
= MOSFET (.)*).e(!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!:#
F%).e !9!B O)p) *"&2)*$&*e = MOSFET (.)*).e $ (").*e (%2e %($'%&e&!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!::
F%).e !9!B O)p) *"&2)*$&*e
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0
φ M = 4!6 e> ,φ M 3 = 4!4 e> = MOSFET (.)*).e $ (").*e (%2e %($'%&e&!!!!!!!!!!!!!!!!!!!!!!!:9
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INDEX OF TABLES
Table 7/#/%3 De5%*e p$.$ee.( )(e2 #". (%)'$%"& !!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!&;
T$'e !!B Re%"& 1%(e 'e&+ "# +e *+$&&e' $&2 *"%&$%"&( "# #."&-$*/ $e e$' 1"./- #)&*%"&( $ 2%##e.e& %($'%&e& 'e&+( #". DMDG MOSFET
!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!
7%
T$'e !!B M%&%) ().#$*e p"e&%$', $e $&2 .e%"& .e(p"&(%'e #". +.e(+"'2 5"'$e "# DMDG
MOSFET $ 2%##e.e& %($'%&e& 'e&+
!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!
7%
T$'e !!3B Re%"& 1%(e #."& $&2 $*/ $e e$' 1"./-#)&*%"& *"%&$%"&( $ 2%##e.e&
%($'%&e& 'e&+ #". TMDG MOSFET (.)*).e
!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!
7&
T$'e !!4BT+e %&%) ().#$*e p"e&%$' .e(p"&(%'e #". +.e(+"'2 5"'$e "# TMDG MOSFET $
2%##e.e& %($'%&e& 'e&+ 1%+ +e 2e*%2%& $e $&2 .e%"&
!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!
7&
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ACRONYMS
CGAAB C'%&2.%*$' G$e-A''-A.")&2
CLMB C+$&&e' Le&+ M"2)'$%"&
CMOSB C"p'ee&$. Me$' O%2e Se%*"&2)*".
DGB D")'e G$e
DI:LB D.$%& I&2)*e2 :$..%e. L"1e.%&
DMDGB D)$' M$e.%$' D")'e G$e
DSMB D.$%& S%2e M%($'%&e&
FDSOIB F)'' Dep'ee2 S%'%*"& O& I&()'$".
GAAB G$e A'' A.")&2
HCEB H" C$..%e. E##e*
ICB I&e.$e2 C%.*)%
ITRSB I&e.&$%"&$' Te*+&"'" R"$2$p #". Se%*"&2)*".
LACB L$e.$' A(e.%* C+$&&e'
MISFETB Me$' I&()'$". Se%*"&2)*". F%e'2 E##e* T.$&(%(".
MOSFETB Me$' O%2e Se%*"&2)*". F%e'2 E##e* T.$&(%(".
RFB R$2%" F.e)e&*
SCEB S+". C+$&&e' E##e*
SMDGB S%&'e M$e.%$' D")'e G$e
SEMOIB Se%*"&2)*". O& I&()'$".
SOIB S%'%*"&-"&-I&()'$".
SSMB S").*e S%2e M%($'%&e&
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@II
TMDGB T.%p'e M$e.%$' D")'e G$e
TTLB T.$&(%(". T.$&(%(". L"%*
UTCB U'.$ T+%& C+$&&e'
>LSIB >e. L$.e S*$'e I&e.$%"&
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@III
ABSTRACT
C)..e&', +e ep$&(%"& "# >LSI %&2)(. %( p.%$.%' #"*)((e2 "& +e 1$ " +e e##%*%e&*
"# (e%*"&2)*". 2e5%*e( 1+%*+ %& ).& %( e.ee' 2epe&2e& "& +e $25$&*ee& %& +e
CMOS e*+&"'"! A( +e (*$'%& 2"1& "# 2e5%*e 2%e&(%"&( $.e e%& $.e((%5e, *$..%e.
"%'% .e2)*e2 2)e " 2"p$& #')*)$%"&, $e )&&e''%& e##e* %&*.e$(e( $&2 p-& )&*%"&
'e$/$e *)..e& %&*.e$(e(! M".e p.e*%(e $&2 &"5e' 2e5%*e (.)*).e( $.e .e)%.e2 " e
2e5e'"pe2 #". ($%(#%& +e $"5e .e)%.ee&(! T+e(e &ee2( +$5e 'e2 " 2e5e'"pe& "#
$'e.&$%5e e*+&"'"! T+e 2")'e-$e
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Chapter 1
1 INTRODUCTION
! MOSFE and its scaling& A 2istorical %ers3ecti4e
O5e. +e p$( +%. e$.(, +e ."1+ "# %*."e'e*."&%*(, $)"$%"&, %".$%"& (+$.%&,
(%&$' p."*e((%& +$( (."&' 2epe&2e& "& 5e. '$.e (*$'e %&e.$e2 *%.*)% LSI=
%&2)(.! A25$&*ee& "# *"p)e. $&2 #$(*%&$%& $2e( 1%+ e5e. p"((%'e $pp'%*$%"&(?
e % $)2%", 5%2e", $& pe "# $e ". +%+ (pee2 *")&%*$%"&? .e5"')%"&%e2 +e 1".'2
"# %&e.*"&&e*%5% $&2 e&e.$%&e&! I( $'' *.e2%e2 " +e +%+ (pee2 )'.$ ($'' (%e2,
'"1 p"1e. (e%*"&2)*". 2e5%*e(, (e&(".(, $'' &e1 $e.%$'( $&2 +e%. %p'ee&$%"&
+.")+ >LSI 2e(%&!
I $'' ($.( 1%+ +e %&(%+ "# L%'%ee'2 "# I&()'$e2 G$e F%e'2 E##e* T.$&(%(". %&
9 1+%*+ ".e +e p"e&%$' " ()(%)e +e 5$*)) )e e*+&"'" 1%+ ($'' (%e2
(e%*"&2)*". .$&(%(". e*+&"'" ! T+e #%.( p.$*%*$' e+%%%"& ""/ p'$*e %& 960
K$+& $&2 A%''$ %& +e #". "# +e S%'%*"&-$(e2 Me$' O%2e Se%*"&2)*". F%e'2
E##e* T.$&(%(".
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(*$'e %&e.$%"&
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Figure ..& First $# fabricated by ay 5ast6s de4elo3ment grou3 at Fairc"ild #or3. 789
Figure ..+& ransistor $ntegration on #"i3 dis3laying Moore6s 5a1. 7:9
! O4er4ie1 of MOSFEs
T+e e$' "%2e (e%*"&2)*". #%e'2 e##e* .$&(%(".
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Figure .+.&
I& e&+$&*ee& "2e MOSFET(, $ 5"'$e 2."p $*."(( +e "%2e %&2)*e( $ *"&2)*%&
*+$&&e' e1ee& +e (").*e $&2 2.$%& *"&$*( 2)e " +e #%e'2 e##e*! T+e &$e e&+$&*ee&
"2e .e#e.( " e&+$&*e "# *"&2)*%5% 1%+ %&*.e$(e %& "%2e #%e'2 +$ $.$* *$..%e.( " +e
*+$&&e', $'(" /&"1& $( +e %&5e.(%"& '$e.! T+e *+$&&e' *$& %&*')2e e'e*."&(
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de.ice may be referred to as a metal-insulator-semiconductor 2ET BMIS2ET/7
!3 MOSFE o3eration
.. Metal O
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I# +e MOSFET %( $& &-*+$&&e' MOSFET, +e& +e (").*e $&2 2.$%& $.e & .e%"&( $&2 +e
()(.$e %( $ p .e%"&! I# +e MOSFET %( $ p-*+$&&e' MOSFET, +e& +e (").*e $&2 2.$%&
$.e p .e%"&( $&2 +e "2 %( $ & .e%"&! T+e (").*e %( (" &$e2 e*$)(e % %( +e (").*e "#
+e *+$.e *$..%e.(
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&e$%5e 5"'$e #". p-*+$&&e'= %( $pp'%e2 e1ee& $e $&2 (").*e, +e *+$&&e' 2%($ppe$.(
$&2 "&' $ 5e. ($'' ()+.e(+"'2 *)..e& *$& #'"1 e1ee& +e (").*e $&2 +e 2.$%&!
T+e 2e5%*e $ *"&$%& S%'%*"& "& I&()'$".
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7
5e.%*$' 2%e&(%"&( "# +e .$&(%(". (+")'2 e (*$'e2 +e ($e (*$'%& #$*". %& ".2e. "
$5"%2 +e SCE( $&2 e&().e ""2 e'e*."($%* *"&."' 1+e& #$.%*$%& +e ($''e. 2e5%*e(,
$&2 +e ($e (*$'%& #$*"., +e ()pp' 5"'$e (+")'2 e .e2)*e2 $&2 ()(.$e 2"p%&
*"&*e&.$%"& (+")'2 e %&*.e$(e2!
! Reasons for MOSFE scaling
S$''e. MOSFET( $.e $.$*%5e #". $ &)e. "# .e$("&(! T+e $%& .e$("& " )%'2
.$&(%(".( ($''e. %( " .")p ".e $&2 ".e 2e5%*e( %& $ %5e& *+%p $.e$! T+%( .e()'( %& $
*+%p 1%+ +e ($e #)&*%"&$'% %& $ 'e((e. $.e$, ". *+%p( 1%+ ".e #)&*%"&$'% %& +e
%2e&%*$' $.e$! A( #$.%*$%"& *"(( #". $ (e%*"&2)*". 1$#e. $.e .e'$%5e' #%e2, +e *"( pe.
%&e.$e2 *%.*)%( %( "(' .e'$e2 " +e &)e. "# *+%p( +$ *$& e p."2)*e2 pe. 1$#e.!
He&*e, ($''e. IC( $''"1 ".e *+%p( pe. 1$#e., 2e*.e$(%& +e p.%*e pe. *+%p! I& #$*, "5e.
+e p$( 30 e$.( +e &)e. "# .$&(%(".( pe. *+%p +$( ee& 2")'e2 e5e. 3 e$.( "&*e $
&e1 e*+&"'" &"2e %( %&."2)*e2! F". e$p'e +e &)e. "# MOSFET( %& $
%*."p."*e((". #$.%*$e2 %& $ 4 & e*+&"'" *$& 1e'' e 1%*e $( $& $( %& $ 6
& *+%p! T+%( 2")'%& "# .$&(%(". 2e&(% 1$( #%.( epe.%e&e2 G".2"& M"".e %& 96
$&2 %( *""&' .e#e..e2 " $( M"".e( '$1 !
I %( $'(" )()$' +$ ($''e. .$&(%(".( (1%*+ ".e .$p%2'! F". e$p'e, "&e $pp."$*+ "2%e&(%"& .e2)*%"& %( $ (*$'%& "# +e MOSFET +$ .e)%.e( $'' 2e5%*e (%e( " 2e*.e$(e
p."p".%"&$''! T+e $". 2e5%*e 2%e&(%"&( $.e +e *+$&&e' 'e&+, *+$&&e' 1%2+, $&2
"%2e +%*/&e((! +e& +e $.e (*$'e2 2"1& +e ($e #$*"., +e .$&(%(". *+$&&e'
.e(%($&*e 2"e( &" "2%#, 1+%'e $e *$p$*%$&*e %( *) +$ #$*".! He&*e, +e RC
2e'$ "# +e .$&(%(". (*$'e( 1%+ $ (%%'$. #$*".!
+%'e +%( +$( ee& *"&5e&%"&$'' +e *$(e #". +e "'2e. e*+&"'"%e(, #". +e ($e-"#-+e-$.
MOSFET( .e2)*%"& "# +e .$&(%(". 2%e&(%"&( 2"e( &" &e*e(($.%' .$&(#". " +%+e.
*+%p (pee2 e*$)(e +e 2e'$ 2)e " %&e.*"&&e*%"&( %( ".e (%&%#%*$&!
!6 Scaling 3roblems
M$&)#$*).%& MOSFET( 1%+ )*+ ($''e. *+$&&e' 'e&+( +$& $ %*."e.e %( $ %
*+$''e&e, $&2 +e 2%##%*)'%e( "# (e%*"&2)*". 2e5%*e #$.%*$%"& $.e $'1$( $ 1$.&%&
#$*". %& $25$&*%& %&e.$e2 *%.*)% e*+&"'"! I& .e*e& e$.(, +e ($'' 2%e&(%"& "# +e
MOSFET, )&2e. $ #e1 e&( "# &$&"e.e(, +$( *.e$e2 "pe.$%"&$' .")'e(!
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I&e.$%"& "# %''%"&( "# .$&(%(".( "& $ *+%p +$( ee& .e$'%$'e 2)e " +e p"((%%'% "
p$e.& e5e. ($''e. #e$).e "& (%'%*"& +.")+ "p%*$' '%+".$p+! A( "p%*$' '%+".$p+
e&e.( +e ()-1$5e'e&+ .e%e, '%+ 2%##.$*%"& $&2 %&e.#e.e&*e #." () 1$5e'e&+
p$e.& #e$).e *$)(e( %$e 2%(".2e.! T+e.e#".e, p$e.&%& e*"e( 2%##%*)' 1%+")
$2"p%& .e("')%"& e&+$&*ee& e*+&%)e(!
T+e ITRS( "( .e*e& p."e*%"& p."5%2e( ("e %&(%+ $( " *)..e& $./e 2.%5e.(! F%! 4
%'')(.$e( +$ +e p"1e. *"&()p%"& .e&2 5e.()( p"1e. .e)%.ee&( %( *.e$%& +e
P"1e. G$pJ $/%& " +e De(%& G$pJ +$ +e %&2)(. 2e$' 1%+ $ 2e*$2e $"! T+%( $p %(
*.e$%& $ &ee2 " $&$e p"1e. $ $'' 'e5e'( "# $(.$*%"& $&2 $".' $ +e 2e5%*e 'e5e'!
T+e p"1e. *"&()p%"& %( $pp."%$e2 8
−V th P
= P + P = α fC V
+ V I
+ I A0 s
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Figure .=.+& %o1er #onsum3tion trends 1it" years of scaling. (#ourtesy& $RS +,,:)
T+)( V DD$&2
V th $.e %& *"'%* #". 1+%*+ +e $e "%2e &ee2( " e (*$'e2 .ee&2")('
1+%*+ %& ).& %&*.e$(e( $e )&&e''%& 'e$/$e(! A'(", +%+e. ()(.$e 2"p%& %( )( "
*+e*/ +e (+". *+$&&e' e##e*(
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%$
!6! $ncreased gate-o! F". $& "+e. 2%e'e*.%*( +e 5$')e %( *"&(%2e.$' '"1e., e&2%& "
%&*.e$(e +e )&&e''%& *)..e&, ("e1+$ "pp"(%& +e e&e#%( "# +%+e. 2%e'e*.%* *"&($&!
T+e e.ee $e-(").*e 5"'$e %( *$'*)'$e2 +e (.e&+ "# +e e'e*.%* #%e'2 $'e " e
()($%&e2 +e $e 2%e'e*.%* e#".e (%&%#%*$& 'e$/$e "**).(! S%&*e +e %&()'$%&
2%e'e*.%* %( $2e +%&&e., +e e'e*.%* #%e'2 $&%)2e 1%+%& % "e( +%+ #". $ *"&($&
5"'$e! T+%( .e)%.e( )(%& '"1e. 5"'$e( 1%+ +e +%&&e. 2%e'e*.%*!
!6!3 $ncreased >unction lea'age
T" $/e 2e5%*e( ($''e., )&*%"& 2e(%& +$( e*"e ".e *"p'e, #".*%& "
+%+e. 2"p%& 'e5e'(, (+$''"1e. )&*%"&(, +$'" 2"p%& e*!6,7 $'' " .e2)*e 2.$%& %&2)*e2
$..%e. '"1e.%&
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!6!4 5o1er out3ut resistance
F". $&$'" #)&*%"&(, ""2 $%& .e)%.e( +%+ MOSFET ")p) .e(%($&*e, 1+%*+ %( " ($,
+e MOSFET *)..e& (+")'2 5$. "&' $ '%'e 1%+ +e $pp'%e2 2.$%&-"-(").*e 5"'$e! A(
2e5%*e( $.e $2e ($''e., +e %')e&*e "# +e 2.$%& *"pee( ".e ()**e((#)'' 1%+ +$ "# +e $e 2)e " +e ."1%& *'"(e&e(( "# +e(e 1" e'e*."2e(, %&*.e$(%& +e (e&(%%5% "# +e
MOSFET *)..e& " +e 2.$%& 5"'$e! T" *")&e. +e .e()'%& 2e*.e$(e %& ")p) .e(%($&*e,
*%.*)%( $.e $2e ".e *"p'%*$e2, e%+e. .e)%.%& ".e 2e5%*e(, #". e$p'e
+e *$(*"2e $&2 *$(*$2e $p'%#%e.(, ". #ee2$*/ *%.*)%. )(%& "pe.$%"&$' $p'%#%e.(, #".
e$p'e $ *%.*)% '%/e +$ %& +e $2$*e& #%).e!
!6! 5o1er transconductance
T+e .$&(*"&2)*$&*e "# +e MOSFET 2e*%2e( %( $%& $&2 %( 2%.e*' p."p".%"&$' " +"'e
". e'e*."& "%'% 2epe&2%& "& 2e5%*e pe, #". '"1 2.$%& 5"'$e(! A( MOSFET
2%e&(%"& %( 2e*.e$(e2, +e #%e'2( %& +e *+$&&e' %p."5e $&2 +e 2"p$& %p).% 'e5e'(
%&*.e$(e(! :"+ *+$&e( 2e*.e$(e +e *$..%e. "%'%, $&2 +)( +e .$&(*"&2)*$&*e! A(
*+$&&e' 'e&+( $.e 2e*.e$(e2 1%+ &" p."p".%"&$' .e2)*%"& %& 2.$%& 5"'$e, %&*.e$(%& +e
e'e*.%* #%e'2 %& +e *+$&&e', +e .e()' %( '%%%& +e *)..e&, 5e'"*% ($).$%"& "# +e
*$..%e.(, $&2 +e .$&(*"&2)*$&*e!
!6!6 $nterconnect ca3acitance
C"&5e&%"&$'', (1%*+%& %e 1$( .")+' p."p".%"&$' " +e $e *$p$*%$&*e "#
MOSFET(! O& +e "+e. +$&2, 1%+ .$&(%(".( e*"%& ($''e. $&2 &)e. "# .$&(%(".(
e%& '"*$e2 "& +e *+%p, %&e.*"&&e* *$p$*%$&*e
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P"1e. MOSFET( $.e $ 2$&e. "# +e.$' .)&$1$! A( +e%. "&-($e .e(%($&*e %&*.e$(e(
1%+ epe.$).e, %# +e '"$2 %( $pp."%$e' $ *"&($&-*)..e& '"$2 +e& +e p"1e. '"((
%&*.e$(e( *"..e(p"&2%&', e&e.$%& e.$ +e$! +e& +e +e$ (%&/ %( &" %&e''%e& "
.e$%& +e epe.$).e '"1 e&")+, +e )&*%"& epe.$).e $ %&*.e$(e .$p%2' $&2
)&*"&."''$', .e()'%& %& 2e5$($%"& "# +e 2e5%*e!
!6!8 %rocess 4ariations
%+ MOSFET( e*"%& ($''e., +e &)e. "# $"( %& +e (%'%*"& +$ *.e$e $& "# +e
.$&(%(".( p."pe.%e( %( e*"%& #e1e., 1%+ +e .e()' +$ *"&."' "# 2"p$& &)e.( $&2
p'$*ee& %( ".e .$&2"! D).%& *+%p $&)#$*).%&, .$&2" p."*e(( 5$.%$%"&( $##e* $''
.$&(%(". 2%e&(%"&(B 'e&+, 1%2+, )&*%"& 2ep+(, "%2e +%*/&e(( etc., $&2 e*"e $
.e$e. pe.*e&$e "# "5e.$'' .$&(%(". (%e $( +e .$&(%(". (+.%&/(! T+e .$&(%(". *+$.$*e.%(%*( e*"e 'e(( *e.$%&, ".e ($%(%*$'! T+e .$&2" &$).e "# $&)#$*).e
e$&( 1e 2" &" /&"1 1+%*+ p$.%*)'$. e$p'e MOSFET( $*)$'' 1%'' e&2 )p %& $
p$.%*)'$. %&($&*e "# +e *%.*)%! T+%( )&*e.$%& #".*e( $ 'e(( "p%$' 2e(%& e*$)(e +e
2e(%& )( 1"./ #". $ .e$ 5$.%e "# p"((%'e *"p"&e& MOSFET( 0!
!6!9 Modeling c"allenges
M"2e.& IC( $.e *"p)e.-(%)'$e2 1%+ +e $% "# "$%&%& 1"./%& *%.*)%( #." +e 5e.
#%.( $&)#$*).e2 '"! A( 2e5%*e( $.e %&%$).%e2, +e 2%##%*)' "# +e p."*e((%& $/e( %
+$.2 " p.e2%* e$*' 1+$ +e )'%$e 2e5%*e( '""/ '%/e, $&2 "2e''%& "# p+(%*$'
p."*e((e( e*"e( ".e *+$''e&%& $( 1e''! I& $22%%"&, %*."(*"p%* 5$.%$%"&( %& (.)*).e
2)e (%p' " +e p."$%'%(%* &$).e "# $"%* p."*e((e( .e)%.e ($%(%*$' p.e2%*%"&(!
T+e(e #$*".( *"%&e " $/e $2e)$e (%)'$%"& $&2 .%+ +e #%.( %e $&)#$*).e
2%##%*)'!
T" %&%%e +e 2%##%*)'%e( "# ($'' (%e )'/ MOSFET(, Re(e$.*+e.( $&2 e&%&ee.(
2%(*"5e. (e5e.$' $'e.&$%5e 2e5%*e (.)*).e(, 1+%*+ +e e*+&"'" *$& #).+e. (*$'e2
2"1& 1%+ $ %p."5e2 pe.#".$&*e! T+e(e $.e, 2")'e $e
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L"1e.%& +e (").*e2.$%& )&*%"& 2ep+(
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!7! Gate Engineering ec"ni?ues 2ig"-'
dielectric
H%+-/e$' $e( 1e.e %&."2)*e2 %&" $(( p."2)*%"& %& 007 I&e' %& +e 4 &
CMOS e*+&"'" e&e.$%"&! T+%( %( +e #%.( %e +$ .$2%%"&$' "%2e( ". "&%.%2e( +$5e
ee& .ep'$*e2 %& $e ($*/(, " e&$'e *"&%&)")( (*$'%& "# +e EOT!
Metal Gate
I&%%$'', p"'-S%+%+-/ *"%&$%"& $e ($*/ 1$( *"&(%2e.e2 $( $ .")e " %p."5%& $e
'e$/$e! H"1e5e. +e".e%*$' ()2%e( $&2 epe.%e&$' 2$$ (+"1 "%'% 2e.$2$%"&
*"p$.e2 " +e )(e "# e$' $e(! Depe&2%& "& +e $e 2%e'e*.%*, +e 1"./ #)&*%"&
5$.%e( 2)e " 2%##e.%& $&2 $'%&e&(!
Multi-Material Gate
O&e "# +e p."%&e& e$&( " e .%2 "# +" *$..%e. e##e*
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Multi3le Gate
Figure .;.+& %rogress of t"e MOSFE ec"nology t"roug" multi3le-gates (79)
A p"e&%$' *$&2%2$e " *"&%&)e +e MOSFET (*$'%& #).+e. %( +e #)''-2ep'ee2 (%'%*"&-
"&-%&()'$".
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6
"# +e &)e. $&2 +e "%'% "# e'e*."&( $&2 +"'e( $( 1e'' $( 2.%5%& *)..e& ecti4es
T+e $%& "e*%5e( "# +%( +e(%( $.e " )&2e.($&2 +e (.)*).e 2e(%& "# $e e&%&ee.e2
DG MOSFET( $'"& 1%+ %( $*/ $e %($'%&e&, 1+%'e *"p$.%& +e 1%+ (%&'e
$e.%$' 2")'e $e
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$e.%$' $e 1%+ 2%##e.e& 1"./ #)&*%"& "+ %& "p $&2 "" "# +e 2e5%*e %&(e$2 $
(%&'e $e.%$' $e! F).+e.".e " .e2)*e +" *$..%e. e##e*
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Chapter 2
2 LITERATURE REVIEW
! Double gate MOSFEs
T+e 2")'e-$e
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Figure +..+& #ross-sectional 4ie1 of double gate MOSFE structure
D")'e-$e MOSFET +$( 1" $e( (%)'$&e")(' *"&."''%& +e *+$.e %& +e +%& (%'%*"&
"2 '$e., $''"1%& #". 1" *+$&&e'( #". *)..e& #'"1! :e*$)(e +e (%'%*"& #%' %( +%&, $
2%.e* *+$.e *")p'%& e%(( e1ee& +e #."& $&2 $*/ $e %&5$.%$' 3, %')e&*%& +e
e.%&$' *+$.$*e.%(%*( "# +e 2e5%*e
General DG O3eration
T+e 2e5%*e *$& e "pe.$e2 %& (e5e.$' 1$( 36!T+e 5"'$e $pp'%e2 "& +e $e e.%&$'(
*"&."'( +e e'e*.%* #%e'2, 2ee.%&%& +e $")& "# *)..e& #'"1 +.")+ +e *+$&&e'! T+e
"( *""& "2e "# "pe.$%"& %( " (1%*+ "+ $e( (%)'$&e")('! A&"+e. "2e %( "
(1%*+ "&' "&e $e $&2 $pp' $ %$( " +e (e*"&2 $e
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(1) F."& *+$&&e' $'"&e *"&2)*%&, +e $*/ *+$&&e' e%& e%+e. 2ep'ee2 ". $**))'$e2!
(2) :"+ *+$&&e'( *"&2)*%&, "+ ". e%+e. "# +e *+$&&e'( e%& %& 1e$/ ". (."&
%&5e.(%"&!
T+e *)..e&-5"'$e *+$.$*e.%(%*( "# +e 2e5%*e 1%+ +e #."& *+$&&e' %& (."& %&5e.(%"&
$&2 +e $*/ *+$&&e' e%+e. %& $**))'$%"& ". %& 2ep'e%"& +$( ee& "2e''e2 $&$'%*$''
37,38,39 S%&*e (%'%*"& #%'( $.e +%&, +e e'e*.%*$' p."pe.%e( "# MOSFET( #$.%*$e2 $.e
%&+e.e&' %')e&*e2 +e *+$.e *")p'%& e1ee& +e #."& $&2 $*/ $e(! D)e "
e.ee' ($'' 2e5%*e 2%e&(%"&(, '"1 5"'$e "pe.$%"& 1%'' e $&2$". 1+e.e +e '"1
+.e(+"'2 5"'$e %( .e)%.e2 40!
! Gate engineered DG MOSFEs
G$e e&%&ee.%& "# +e MOSFET e$&(, +e "$' $e $e.%$' "# +e MOSFET %(
e&%&ee.e2 ". 2%5%2e2 %&" 1" $e.%$'( ". +.ee $e.%$'(! I# +e "$' $e.%$' 'e&+ %( +e
*"%&$%"& "# 1" 2%##e.e& $e.%$'( +$5%& 2%##e.e& e$' 1"./ #)&*%"&, +e& +e
MOSFET (.)*).e %( /&"1& $( 2)$' $e.%$' $e
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#." pe&e.$%& %&" +e *+$&&e'! T+%( (ep p"e&%$' %( +)( .e(p"&(%'e #". '"1e. ()
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+.e(+"'2 'e$/$e *)..e&, .e2)*e2 DI:L e##e*( $&2 %&*.e$(e2 ")p) .e(%($&*e %& DMG
MOSFETS! T+%( (" *$''e2 $e 1"./-#)&*%"& e&%&ee.%& $''"1( +e DMG 2e5%*e( " +$5e
($e +.e(+"'2 5"'$e #". $ .e2)*e2 2"p%& *"&*e&.$%"& %& +e *+$&&e' .e%"&, .e()'%& %&
ee. %)&% " "%'% 2e.$2$%"& $&2 +e&*e +%+e. .$&(*"&2)*$&*e 4!
!3 Ad4antages of DG MOSFEs
%! .e2)*%"& "# %"##!
%%! )&2"pe2 *+$&&e' e'%%&$e( %&.%&(%*
%%%! p$.$ee. #')*)$%"&( $&2 %&%%e(
%5! %p).% (*$e.%&!
5! 2")'e $e $''"1( #". +%+e. *)..e& 2.%5e
*$p$%'%
5%! ee. *"&."' "# (+". *+$&&e' e##e*(!
!4 #"allenges of DG MOSFEs
%! C"&."' "# +.e(+"'2 5"'$e!
%%! F$.%*$%"& "# +e DG-FET %( 2%##%*)'!
%%%! A'%&e& "# "+ $e( %( +$.2 " $*+%e5e,
%5! M%($'%&e2 $e( .e()' %& e.$ *$p$*%$&*e $&2 '"(( "# *)..e& 2.%5e!
! Gate misalignment of DG MOSFEs
M%($'%&e& e1ee& "p $&2 "" G$e "# +e DG MOSFET( $.e +e "( *""&
p"((%%'% 2).%& #$.%*$%"&! :e*$)(e "# %($'%&e& ("e p$. "# +e *+$&&e' +$( "&' "&e
$e $&2 e+$5e( $( $ (%&'e $e *"&5e&%"&$' )'/ MOSFET! F).+e.".e 2)e " +e $(e&
"# e'e*.%* #%e'2, +e e'e*."($%* *"&."' "5e. +e $e .e2)*e( $&2 +e *+$&&e' .e(%($&*e
%&*.e$(e(, +e.e#".e 2.%5e *)..e& 2e*.e$(e(! T+e %($'%&e& *$& e +$ppe&e2 e%+e. (%2e "#
+e 2e5%*e? %!e! 2.$%& (%2e ". (").*e (%2e! I# +e $e (+%#e2 "1$.2( (").*e (%2e +e& % %(
*$''e2 $( 2.$%& (%2e %($'%&e&
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!6 Effect of misalignment& 3ast 1or's
T+e >LSI %&2)(. +$( ee& 2e5e'"p%& 'e$p( $&2 ")&2( %& +e p$( #e1 2e*$2e( (%&*e %(
%&*ep%"& $&2 % %( ("'e' *.e2%e2 " +e *"&%&)")( 2%e&(%"&$' (*$'%& "# MOSFET(! T+e
"( (.$%+#".1$.2 $25$&$e( "# MOSFET (*$'%& $.e +%+e. p$*/%& 2e&(%, '"1
2&$%* p"1e. 2%((%p$%"& $&2 %p."5ee& "# (pee2 4! F).+e., +e (.%&e& 2"1&
(*$'%& "# *"p'ee&$. e$'-"%2e-(e%*"&2)*".
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#)&*%"& "# +e e$' $e &e$. +e (").*e
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3
#)&*%"&( .e()'( %& $ (ep-'%/e ().#$*e p"e&%$' p."#%'e e'"1 +e e$' %&e.#$*e e&().%& +e
(*.ee&%& "# +e %&%) ().#$*e p"e&%$' #." +e 2.$%& 5"'$e 5$.%$%"&(! T+e e$' $e
M %( +)( .%+#)'' /&"1& $( +e Screen Gate $&2 +e
e$'
M $( +e Control Gate!
Re22 et al. $2"pe2 +%( e*+&%)e " p."p"(e 2")'e-$e.%$' 2")'e-$e
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e&e.$'' epe*e2 $&2 60 " 80 %($'%&e& %( *"&(%2e.e2 " e "'e.$'e %& ("e *%.*)%
$pp'%*$%"&(!
F". +e #%.( %e %& 004, E! C! S)& $&2 ;! :! K)" 60 $&$'(e2 +e $e %($'%&e& e##e*
"& +e +.e(+"'2 5"'$e "# 2")'e-$e )'.$+%& #)'' 2ep'ee2 (%'%*"&-"&-%&()'$". &MOS
2e5%*e( )(%& $ *"p$* "2e''%&! T+e $'(" *"&(%2e. +e #.%&%& e'e*.%* #%e'2 e##e* "
p.e2%* +e $**).$e e+$5%"). "# +e +.e(+"'2 5"'$e!
I& 00, C! Y%& $&2 C! H! C+$& 6 %&5e(%$e2 +e S").*eD.$%& A(e.%* E##e*( D)e
" G$e M%($'%&e& %& P'$&$. D")'e-G$e MOSFET( "+ epe.%e&$' 2$$ $&2
(%)'$%"& .e()'(! T+e #")&2 +$, +e "5e.'$p .e%"& $ 2.$%& (%2e *$& .e2)*e( DI:L, 1+%'e
+e "5e.'$p .e%"& $ (").*e (%2e 2e*.e$(e( 2.$%& (%2e *$p$*%$&*e $&2 $e 'e$/$e *)..e&!
T+e $'(" *"%. +$ +e *%.*)% 1%'' 1"./( 1%+") $& 2e.$2$%"& 1%+ $ "p%$'
%($'%&e& 'e&+ "# 0 "# "$' $e 'e&+!
I& 008, A! K.$&% $&2 G! A! A.(."& 6 ()2%e2 %& +%( .e(e$.*+ +$, $*/ $e
%($'%&e& *$& e "'e.$e2 1%+") $& (%&%#%*$& 2e.$2$%"& %& *)-"## #.e)e&* $&2
%&.%&(%* 5"'$e $%& #". )'.$ '"1 5"'$e $&$'" $&2 .$2%" #.e)e&*
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2%##e.e& p$.$ee.( "# TMDG MOSFET (.)*).e( $.e $'(" *"p$.e2 1%+ .e(pe*%5e
*")&e.p$.( "# DMDG $&2 SMDG!
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Chapter 3
3 SIMULATION METHODOLOGY
3! $ntroduction
M"(' #". 2e5%*e (%)'$%"& p).p"(e $'$( 2e5%*e (%)'$". $.e )(e2! ATLAS %( $ 5e.
p"1e.#)' ""' %5e( *""& *$p$%'%%e( #". p+(%*$''-$(e2 1"
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III! Re%"&( 1%+%& +e e(+ $.e $((%&e2 " 2%##e.e& $e.%$'( $( .e)%.e2 " *"&(.)* +e
2e5%*e! F". e$p'e, +e (pe*%#%*$%"& "# $ MOS 2e5%*e .e)%.e( +e (pe*%#%*$%"& "#
(%'%*"& $&2 (%'%*"& 2%"%2e .e%"&(!
I>!A#e. +e .e%"&( $.e 2e#%&e2, +e '"*$%"& "# e'e*."2e( %( (pe*%#%e2!
>! T+e #%&$' (ep %( " (pe*%# +e 2"p%& %& e$*+ .e%"&!
T" 2e#%&e $ (.)*).e )(%& *"$&2 '$&)$e, +e #"''"1%& #"). ()-(e*%"&( )( e
(pe*%#%e2 %& +e p."pe. (e)e&*e $( '%(e2!
S3ecifying t"e initial mes"
T+e.e $.e +.ee ($ee&( #". (pe*%#%& $ %&%%$' e(+B
I! Mes" statement
T" (pe*%# $ e(+ +e #%.( ($ee& )( eB
MESH SPACE!MULT>ALUEV
T+%( %( #"''"1e2 $ (e.%e( "# @!MESH $&2 Y!MESH ($ee&(!
@!MESH LOCATION>ALUEV SPACING>ALUEV Y!MESH
LOCATION>ALUEV SPACING>ALUEV
T+e SPACE!MULT p$.$ee. 5$')e %( )(e2 $( $ (*$'%& #$*". #". +e e(+ *.e$e2 +e
@!MESH $&2 Y!MESH ($ee&(! T+e 2e#$)' 5$')e %( ! >$')e( .e$e. +$& 1%'' *.e$e $
'"$'' *"$.(e. e(+ #". #$( (%)'$%"&! >$')e( 'e(( +$& 1%'' *.e$e $ '"$'' #%&e. e(+
#". %&*.e$(e2 $**).$*! T+e @!MESH $&2 Y!MESH ($ee&( $.e )(e2 " 2e#%&e +e
'"*$%"&( %& %*."&( "# 5e.%*$' $&2 +".%"&$' '%&e(, .e(pe*%5e', "e+e. 1%+ +e 5e.%*$' ".
+".%"&$' (p$*%& $(("*%$e2 1%+ +$ '%&e!
II! Elimination statement
A#e. *"p'e%"& "# %&%%$' e(+%&, "&e *$& .e"5e .%2 '%&e( %& (pe*%#%e2 .e%"&(! T+%( %(
p%*$'' 2"&e %& .e%"&( "# +e 2e5%*e 1+e.e $ *"$.(e .%2 %( epe*e2 " e e&")+ ()*+ $(
+e ()(.$e! T+e e'%%&$%"& "# .%2 '%&e( %( *"p'ee )(%& +e ELIMINATE ($ee&! T+e
ELIMINATE ($ee& $/e $1$ e5e. (e*"&2 e(+ '%&e %& +e p$.%*)'$. 2%.e*%"& #."
1%+%& $ (pe*%#%e2 .e*$&'e! F". e$p'e, +e ($ee&B
ELIMINATE COLUMNS @!MIN0 @!MA@4 Y!MIN0!0 Y!MA@3
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E'%%&$e( e5e. (e*"&2 5e.%*$' .%2 '%&e 1%+%& +e .e*$&'e ")&2e2 0, 4, 0 $&2
3 %*."&(!
III!Region statement
O&*e +e e(+ %( (pe*%#%e2, e5e. p$. "# % )( e $((%&e2 $ $e.%$' pe! T+%( %( 2"&e
1%+ REGION ($ee&(! F". e$p'eB
REGION &)e.%&ee.V $e.%$'WpeV p"(%%"& p$.$ee.(V
Re%"& &)e.( )( ($. $ $&2 $.e %&*.e$(e2 #". e$*+ ()(e)e& .e%"& ($ee&!
M$%) 00 2%##e.e& .e%"&( *$& e 2e#%&e2 %& ATLAS! A '$.e &)e. "# $e.%$'( $.e
e%(%&! I# $ *"p"(%%"&-2epe&2e& $e.%$' pe %( (pe*%#%e2, +e $&2 *"p"(%%"&
#.$*%"&( *$& $'(" e 2e#%&e2 %& +e REGION ($ee&!
I>!%osition statement
T+e p"(%%"& p$.$ee.( $.e (pe*%#%e2 %& %*."&( )(%& +e @!MIN, @!MA@, Y!MIN, $&2
Y!MA@ p$.$ee.(! I# +e p"(%%"& p$.$ee.( "# $ &e1 ($ee& "5e.'$p +"(e "# $ p.e5%")(
REGION ($ee&, +e "5e.'$ppe2 $.e$ %( $((%&e2 $( +e $e.%$' pe "# +e &e1 .e%"&!
S3ecifying Electrodes
O&*e +e .e%"&( $&2 $e.%$'( +$5e (pe*%#%e2, $ 'e$( "&e e'e*."2e (+")'2 e 2e#%&e +$
1%'' *"&$*( $ (e%*"&2)*". $e.%$'! T+%( %( $**"p'%(+e2 1%+ +e ELECTRODE
($ee&! F". e$p'eB
ELECTRODE NAMEe'e*."2e &$eV p"(%%"&Wp$.$ee.(V
T+e $%) &)e. "# e'e*."2e( +$ *$& e (pe*%#%e2 %( 0! M".e +$& "&e e'e*."2e
($ee&( $ +$5e +e ($e e'e*."2e &$e! N"2e( +$ $.e $(("*%$e2 1%+ +e ($e
e'e*."2e &$e $.e .e$e2 $( e%& e'e*.%*$'' *"&&e*e2!
S3ecifying Do3ing
F". (pe*%#%& +e 2"p%& DOPING ($ee& %( )(e2 %& ATLAS! F". e$p'eB
DOPING 2%(.%)%"&WpeV 2"p$&WpeV p"(%%"&Wp$.$ee.(V
Analytical Do3ing %rofiles
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A&$'%*$' 2"p%& p."#%'e( $.e 1" pe(? %!e )&%#". ". G$)((%$& #".(!
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9
I! !niform do3ing 3rofile
T+e p$.$ee.( 2e#%&%& +e $&$'%*$' 2%(.%)%"& $.e (pe*%#%e2 %& +e DOPING ($ee&
DOPING UNIFORM CONCENTRATIONE6 N!TYPE REGION
T+e $"5e 2"p%& ($ee& %5e( $ )&%#". &-pe 2"p%& 2e&(% "# 06 *-3 %& +e .e%"&
+$ 1$( p.e5%")(' '$e''e2 $( .e%"& X! T+e p"(%%"& p$.$ee.(B @!MIN, @!MA@, Y!MIN,
$&2 Y!MA@ *$& e )(e2 %&(e$2 "# $ .e%"& &)e.!
II! Gaussian do3ing 3rofile
T+e p$.$ee.( 2e#%&%& +e $&$'%*$' 2%(.%)%"& $.e (pe*%#%e2 %& +e DOPING ($ee&
DOPING GAUSSIAN CONCENTRATIONE8 CHARACTERISTIC0!0 P!TYPE
@!LEFT0!0 @!RIGHT!0 PEAK0!
T+e $"5e 2"p%& ($ee& %5e($ $ p-pe G$)((%$& p."#%'e 1%+ $ pe$/ *"&*e&.$%"& "#
08
*-3
! T+%( ($ee& (pe*%#%e( +$ +e pe$/ 2"p%& %( '"*$e2 $'"& $ '%&e #." 0 "
%*."&(! I# $ G$)((%$& p."#%'e %( e%& $22e2 " $& $.e$ +$ 1$( $'.e$2 2e#%&e2 1%+ +e
"pp"(%e 2"p$& pe, ") *$& )(e +e ;UNCTION p$.$ee. " (pe*%# +e p"(%%"& "# +e
)&*%"& 2ep+ %&(e$2 "# (pe*%#%& +e ($&2$.2 2e5%$%"& )(%& +e CHARACTERISTIC
p$.$ee.
. Defining material 3arameters and models
O&*e +e e(+, e"e., $&2 2"p%& p."#%'e( $.e *"p'ee2, "&e *$& *+$&e +e
*+$.$*e.%(%*( "# e'e*."2e(, *+$&e +e 2e#$)' $e.%$' p$.$ee.(, $&2 2e*%2e 1+%*+
p+(%*$' "2e'( ATLAS 1%'' )(e 2).%& +e 2e5%*e (%)'$%"&! T+e(e e+$5%").( $.e #%&%(+e2
)(%& +e CONTACT, MATERIAL, $&2 MODELS ($ee&( .e(pe*%5e'! Ip$*
%"&%$%"& "2e'( *$& e e&$'e2 )(%& +e IMPACT ($ee&! I&e.#$*e p."pe.%e( $.e (e
)(%& +e INTERFACE ($ee&!
.. S3ecifying #ontact #"aracteristics
0or' function for Gates or Sc"ott'y #ontacts
T+e *"&$* e1ee& e'e*."2e $&2 (e%*"&2)*". $e.%$' %( $(()e2 2e#$)' $( "+%*! I#
$ 1"./ #)&*%"& %( (pe*%#%e2, +e e'e*."2e e+$5e( $( $ S*+"/ *"&$*! T+e CONTACT
($ee& %( )(e2 " 2e#%&e +e e$' 1"./ #)&*%"& "# "&e ". ".e e'e*."2e(! T+e NAME p$.$ee. %( )(e2 " %2e&%# 1+%*+ e'e*."2e 1%'' +$5e %( p."pe.%e( "2%#%e2!
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30
T+e ORKFUNCTION p$.$ee. (e( +e 1"./ #)&*%"& "# +e e'e*."2e! F". e$p'e, +e
($ee&B
CONTACT NAME$e ORKFUNCTION4!8
T+e 1"./ #)&*%"& "# +e $e e'e*."2e (e( " 4!8e>! T+e 1"./ #)&*%"&( "# (e5e.$'
*""&' )(e2 *"&$* $e.%$'( $ e (pe*%#%e2 )(%& +e &$e "# +e $e.%$'! "./
#)&*%"&( #". ALUMINUM, N!POLYSILICON, P!POLYSILICON, TUNGSTEN, $&2
TU!DISILICIDE *$& e (pe*%#%e2 %& +%( 1$! T+e #"''"1%& ($ee& (e( +e 1"./ #)&*%"&
#". $& &-pe p"'(%'%*"& $e *"&$*!
CONTACT NAME$e N!POLYSILICON
T+e CONTACT ($ee& *$& $'(" e )(e2 " 2e#%&e $..%e. $&2 2%p"'e '"1e.%& "# +eS*+"/ $..%e. +e%+! :$..%e. '"1e.%& %( e&$'e2 (pe*%#%& +e :ARRIER p$.$ee.,
1+%'e 2%p"'e '"1e.%& %( (pe*%#%e2 )(%& +e ALPHA p$.$ee.! F". e$p'e, +e ($ee&B
CONTACT NAME$&"2e ORKFUNCTION4!9 :ARRIER ALPHA!0e-7
T+e 1"./ #)&*%"& "# $&"2e S*+"/ *"&$* (e( " 4!9e> e&$'e( $..%e. '"1e.%& $&2 #%e(
*"e##%*%e& "# +e 2%p"'e '"1e.%& " &!
Setting #urrent Boundary #onditions
T" $'e. $& e'e*."2e #." 5"'$e *"&."' " *)..e& *"&."', CONTACT ($ee& %( $'("
)(e2! F". (%)'$%& 2e5%*e( C)..e& *"&."''e2 e'e*."2e( $.e )(e#)', 1+e.e +e *)..e& %(
+%+' .e(p"&(%5e " 5"'$e!
T+e ($ee& #". *)..e& ")&2$. *"&2%%"&( %(B
CONTACT NAME2.$%& CURRENT
He.e, *+$&e( +e 2.$%& e'e*."2e " *)..e& *"&."'! T+e NETON ". :LOCK ("')%"&
e+"2( $.e &e*e(($. #". $'' (%)'$%"&( 1%+ $ *)..e& ")&2$. *"&2%%"&!
Defining E
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T+e $"5e ($ee& (pe*%#%e( $ p$.$''e' .e(%(". $&2 *$p$*%". "# 0 "+( $&2 0 pF
.e(pe*%5e' %& (e.%e( 1%+ $ ZH %&2)*".! N"e +$ %& D (%)'$%"&(, +e(e p$((%5e
e'ee& 5$')e( $.e (*$'e2 +e 1%2+ %& +e +%.2 2%e&(%"&! S%&*e %& D ATLAS $(()e( $
Z 1%2+, +e .e(%($&*e e*"e( 0 [-Z!
D%(.%)e2 *"&$* .e(%($&*e #". $& e'e*."2e *$& e (pe*%#%e2 )(%& +e CON!RESIST
p$.$ee.! F". e$p'e, +e ($ee&B
CONTACT NAME(").*e CON!RESISTANCE0!0
T+e $"5e ($ee& (pe*%#%e( +$ +e (").*e *"&$* +$( $ 2%(.%)e2 .e(%($&*e "# 0!0
[*!
Floating #ontacts
F". (pe*%#%& $ #'"$%& e'e*."2e +e CONTACT ($ee& %( $'(" )(e2! T+e.e $.e
*"p'ee' 1" 2%##e.e& (%)$%"&( 1+e.e #'"$%& e'e*."2e( $.e (%&%#%*$&! T+e #%.(
*"&2%%"& %( #". #'"$%& $e e'e*."2e( )(e2 %& EEPROM $&2 "+e. p.".$$'e 2e5%*e(!
T+e (e*"&2 *"&2%%"& %( +e *"&$*( 1%+ +e (e%*"&2)*". $e.%$'( ()*+ $( #'"$%& #%e'2
p'$e( %& +%+ p"1e. 2e5%*e(!
F'"$%& $e( $.e e&$'e2 2e#%&%& +e p$.$ee. FLOATING "& +e CONTACT
($ee&! F". e$p'e, +e ($ee&B
CONTACT NAME#$e FLOATING
T+e $"5e ($ee& %5e( +$ +e e'e*."2e &$e2 #$e 1%'' e #'"$%& $&2 +$ *+$.e
")&2$. *"&2%%"&( 1%'' $pp'!
F". 2%.e* *"&$*( " +e (e%*"&2)*"., +e FLOATING p$.$ee. *$&&" e )(e2! T+%(
pe "# #'"$%& e'e*."2e %( e( (%)'$e2 2e#%&%& *)..e& ")&2$. *"&2%%"&( "& +e
CONTACT ($ee&! F". e$p'e, +e ($ee&B
CONTACT NAME2.$%& CURRENT
T+e $"5e ($ee& %5e( *)..e& ")&2$. *"&2%%"&( #". +e e'e*."2e &$e2 2.$%&! O&
()(e)e& SOL>E ($ee&(, +e 2.$%& *)..e& ")&2$. *"&2%%"& 1%'' 2e#$)' " e."
*)..e&, +e.e#".e #'"$%& +e *"&$*!
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S"orting 1o #ontacts oget"er
I %( #e$(%'e %& ATLAS " (+". 1" ". ".e *"&$* "e+e. (" +$ 5"'$e( "& "+
*"&$*( $.e ($e! T+%( %( )(e#)' #". $& e*+&"'"%e( #". e$p'e 2)$' $e MOSFET(!
T+e.e $.e ("e e+"2( #". $*+%e5%& +%( 2epe&2%& "& +"1 +e (.)*).e 1$( ".%%&$''
2e#%&e2!
I# +e (.)*).e %( (pe*%#%e2 )(%& ATLAS (&$, "&e *$& +$5e &)e. "# ELECTRODE
($ee&( 1%+ +e ($e NAME p$.$ee. (pe*%#%& 2%##e.e& '"*$%"&( %&(%2e +e 2e5%*e
(.)*).e! I& +%( *$(e, +e $.e$( (pe*%#%e2 " e e'e*."2e( 1%'' e *"&(%2e.e2 $( +$5%& +e
(%%'$. $pp'%e2 5"'$e! A (%&'e *)..e& 1%'' *"e %&" 5%e1 *"%&%& +e *)..e& +.")+
"+ ELECTRODE $.e$(!
Ma'ing an O3en #ircuit #ontact
I %( "#e& &e*e(($. " *$.. ") $ (%)'$%"& 1%+ $& "pe& *%.*)% "& "&e "# +e (pe*%#%e2
e'e*."2e(! T+e.e $.e +.ee 2%(%&* e+"2( " *.e$e $& "pe& *%.*)% *"&$*!
I! T+e #%.( e$&( %( " "$'' .e"5%& $& e'e*."2e #." +e (.)*).e #%'e!
II! T+e (e*"&2 1$ %( " $22 $& .ee&2")(' '$.e ')pe2 .e(%($&*e! F". e$p'e, 000 [
"&" +e *"&$* " e $2e "pe& *%.*)%!
III! T+e +%.2 e$&( %( " (1%*+ +e ")&2$. *"&2%%"&( "& +e *"&$* " e *.e$%& "pe&
*%.*)% #." 5"'$e *"&."''e2 " *)..e& *"&."''e2 $&2 +e& 2e#%&%& $ 5e. &e'%%'e
*)..e& +.")+ +$ e'e*."2e!
T+e $"5e e+"2( $.e p"((%'e ) %# $ #'"$%& .e%"& %( e&e.$e2 1%+%& +e (.)*).e, +e&
&)e.%*$' *"&5e.e&*e $ +$5e ("e p."'e! S" +e (e*"&2 e+"2 %( ee. e*$)(e %
%5e( ee. *"&5e.e&*e!
..+ S3ecifying Material %ro3erties
Semiconductor* $nsulator* or #onductor
A'' $e.%$'( $.e 2%5%2e2 %&" +.ee *'$((e(B (e%*"&2)*".(, %&()'$".( $&2 *"&2)*".(! E$*+
*'$(( .e)%.e( $ 2%(%&* (e "# p$.$ee.( " e 2e#%&e2! F". (e%*"&2)*".(, +e(e p."pe.%e(
%&*')2e $&2 $p, e'e*."& $##%&%, ($).$%"& 5e'"*%%e( $&2 2e&(% "# ($e(! T+e.e $.e +e
e&e.$' p$.$ee.( )(e2 %& (%)'$%"&( "# 2e5%*e( #". $& $e.%$'(!
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Setting %arameters
T+e MATERIAL ($ee& pe.%( " (pe*%# )(e. 2e#%&e2 5$')e( #". +e(e e&e.$'
p$.$ee.(! F". e$p'e, +e ($ee&B
MATERIAL MATERIALS%'%*"& EG300! MUN00
T+e $"5e ($ee& %5e( +e $&2 $p 5$')e "# ! e> $&2 '"1 #%e'2 e'e*."& "%'% "#
00 *5-( %& $'' (%'%*"& .e%"&( %& +e 2e5%*e! I# +e $e.%$' p."pe.%e( $.e 2e#%&e2
.e%"&, +e .e%"& %( (pe*%#%e2 )(%& +e REGION ". NAME p$.$ee.( %& +e MATERIAL
($ee&! F". e$p'e, +e ($ee&B
MATERIAL REGION TAUN0e-7 TAUP0e-
T+e $"5e ($ee& %5e( +e e'e*."& $&2 +"'e S+"*/'e-Re$2-H$'' .e*"%&$%"& '%#e%e(
#". .e%"& &)e. 1"! I# +e &$e, $(e, +$( ee& (pe*%#%e2 )(%& +e NAME p$.$ee. %&
+e REGION ($ee&, +e& +e ($ee&B
MATERIAL NAME$(e NC3003e9
T+e $"5e ($ee& %5e( +e *"&2)*%"& $&2 2e&(% "# ($e( $ 300 K #". +e .e%"&
&$e2 $(e!
2etero>unction Materials
T+e +ee.")&*%"& $e.%$' p."pe.%e( *$& $'(" e *)("%e2 1%+ +e MATERIAL
($ee&! I& $22%%"& " +e )()$' $e.%$' p$.$ee.(, *"p"(%%"& 2epe&2e& $e.%$'
p$.$ee.( *$& e (pe*%#%e2! T+e(e %&*')2e *"p"(%%"& 2epe&2e& $&2 p$.$ee.(,
2%e'e*.%* *"&($&(, ($).$%"& 5e'"*%%e(, $&2 (" "&!
F". +ee.")&*%"& $e.%$' ((e(, +e $&2$p 2%##e.e&*e e1ee& +e $e.%$'( %( 2%5%2e2 e1ee& *"&2)*%"& $&2 5$'e&*e $&2(! T+e ALIGN p$.$ee. (pe*%#%e( +e #.$*%"& "# +%(
2%##e.e&*e +$ %( $pp'%e2 " +e *"&2)*%"& $&2 e2e! T+%( 2ee.%&e( +e e'e*."& $&2 +"'e
$..%e. +e%+ $&2 "5e..%2e( $& e'e*."& $##%&% (pe*%#%*$%"&! F". e$p'e, +e ($ee&B
MATERIAL MATERIALI&G$A( ALIGN0!3
MATERIAL MATERIALI&P ALIGN0!3
T+e $"5e ($ee& (pe*%#%e( +$ 3 "# +e $&2 $p 2%##e.e&*e e1ee& I&G$A( $&2 I&P
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%( %5e& " +e *"&2)*%"& $&2 $&2 6 %( %5e& " +e 5$'e&*e $&2! F". e$p'e, %# +e
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$&2 $p 2%##e.e&*e < E= #". +%( $e.%$' ((e %( 0!6 e>, +e& +e *"&2)*%"& $&2 $..%e.
+e%+ %( 0!0 e> $&2 +e 5$'e&*e $&2 $..%e. +e%+ %( 0!390 e>!
Specifying Interface Properties
T+e ($ee& #". INTERFACE %( )(e2 " (pe*%# +e %&e.#$*e *+$.e 2e&(% $&2 ().#$*e
.e*"%&$%"& 5e'"*% $ %&e.#$*e( e1ee& (e%*"&2)*".( $&2 %&()'$".(! F". e$p'e, +e
($ee&B
INTERFACE \F3e0
G%5e +$ $'' %&e.#$*e( e1ee& (e%*"&2)*".( $&2 %&()'$".( +$5e $ #%e2 *+$.e "#
300
*-
! I& $& *$(e(, +e %&e.e(e2 %&e.#$*e %( '%%e2 " $ (pe*%#%* .e%"&! T+%( *$& e
2"&e 1%+ +e @!MIN, @!MA@, Y!MIN, $&2 Y!MA@ p$.$ee.( "& +e INTERFACE
($ee&! T+e(e p$.$ee.( (pe*%# $ .e*$&'e, 1+e.e +e %&e.#$*e p."pe.%e( e 5$'%2! F".
e$p'e, +e ($ee&B
INTERFACE \F3e0 @!MIN!0 @!MA@ Y!MIN0!0 Y!MA@0!
'%%( +e %&e.#$*e *+$.e " +e (e%*"&2)*".-%&()'$". ")&2$. 1%+%& +e (pe*%#%e2
.e*$&'e! I& $22%%"& " #%e2 *+$.e, ().#$*e .e*"%&$%"& 5e'"*% $&2 +e.%"&%*
e%((%"& $.e e&$'e2 $&2 2e#%&e2 1%+ +e INTERFACE ($ee&!
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Chapter 4
4 DEVICE STRUCTURE & SIMULATION
8. "e De4ice Structure
F%).e( 4! $&2 4! (+"1 +e *."(( (e*%"&$' 5%e1 "# +e TMDG MOSFET( 1%+ 2.$%&
(%2e %($'%&e&
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Figure 8..& A sc"ematic 4ie1 of t"e MDG MOSFE structure 1it" drain side misalignment 5engt" of
control gate* first screen gate and second screen gate are ta'en as L*
Land
L3 res3ecti4ely. t si and
t o x
are silicon c"annel t"ic'ness and gate o
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bet1een front and bac' gate at t"e drain end.