CY14E256LA 256 Kbit (32K x 8) nvSRAM Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Document Number: 001-54952 Rev. *D Revised May 7, 2010 256 Kbit (32K x 8) nvSRAM Features ■ 25 ns and 45 ns Access Times ■ Internally Organized as 32K x 8 (CY14E256LA) ■ Hands off Automatic STORE on Power Down with only a Small Capacitor ■ STORE to QuantumTrap Nonvolatile Elements Initiated by Software, Device Pin, or AutoStore on Power Down ■ RECALL to SRAM Initiated by Software or Power Up ■ Infinite Read, Write, and Recall Cycles ■ 1 Million STORE Cycles to QuantumTrap ■ 20 year Data Retention ■ Single 5V + 10% Operation ■ Industrial Temperature ■ 44-Pin TSOP - II and 32-Pin SOIC Package ■ Pb-free and RoHS compliance Functional Description The Cypress CY14E256LA is a fast static RAM, with a nonvol- atile element in each memory cell. The memory is organized as 32K bytes of 8 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the world’s most reliable nonvolatile memory. The SRAM provides infinite read and write cycles, while independent nonvolatile data resides in the highly reliable QuantumTrap cell. Data transfers from the SRAM to the nonvolatile elements (the STORE operation) takes place automatically at power down. On power up, data is restored to the SRAM (the RECALL operation) from the nonvolatile memory. Both the STORE and RECALL operations are also available under software control. [+] Feedback
Transcript
CY14E256LA
256 Kbit (32K x 8) nvSRAM
Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600Document Number: 001-54952 Rev. *D Revised May 7, 2010
256 Kbit (32K x 8) nvSRAM
Features■ 25 ns and 45 ns Access Times
■ Internally Organized as 32K x 8 (CY14E256LA)
■ Hands off Automatic STORE on Power Down with only a Small Capacitor
■ STORE to QuantumTrap Nonvolatile Elements Initiated by Software, Device Pin, or AutoStore on Power Down
■ RECALL to SRAM Initiated by Software or Power Up
■ Infinite Read, Write, and Recall Cycles
■ 1 Million STORE Cycles to QuantumTrap
■ 20 year Data Retention
■ Single 5V +10% Operation
■ Industrial Temperature
■ 44-Pin TSOP - II and 32-Pin SOIC Package
■ Pb-free and RoHS compliance
Functional DescriptionThe Cypress CY14E256LA is a fast static RAM, with a nonvol-atile element in each memory cell. The memory is organized as32K bytes of 8 bits each. The embedded nonvolatile elementsincorporate QuantumTrap technology, producing the world’smost reliable nonvolatile memory. The SRAM provides infiniteread and write cycles, while independent nonvolatile dataresides in the highly reliable QuantumTrap cell. Data transfersfrom the SRAM to the nonvolatile elements (the STOREoperation) takes place automatically at power down. On powerup, data is restored to the SRAM (the RECALL operation) fromthe nonvolatile memory. Both the STORE and RECALL operations are also available under software control.
Pin Name I/O Type DescriptionA0 – A14 Input Address Inputs Used to Select One of the 32,768 bytes of the nvSRAM.
DQ0 – DQ7 Input/Output Bidirectional Data I/O Lines. Used as input or output lines depending on operation.
WE Input Write Enable Input, Active LOW. When the chip is enabled and WE is LOW, data on the I/O pins is written to the specific address location.
CE Input Chip Enable Input, Active LOW. When LOW, selects the chip. When HIGH, deselects the chip.
OE Input Output Enable, Active LOW. The active LOW OE input enables the data output buffers during read cycles. I/O pins are tri-stated on deasserting OE HIGH.
VSS Ground Ground for the Device. Must be connected to the ground of the system.
VCC Power Supply
Power Supply Inputs to the Device.
HSB Input/Output Hardware STORE Busy (HSB). When LOW, this output indicates that a Hardware STORE is in progress. When pulled LOW, external to the chip, it initiates a nonvolatile STORE operation. After each Hardware and Software STORE operation HSB is driven HIGH for a short time (tHHHD) with standard output high current and then a weak internal pullup resistor keeps this pin HIGH (external pullup resistor connection is optional).
VCAP Power Supply
AutoStore Capacitor. Supplies power to the nvSRAM during power loss to store data from SRAM to nonvolatile elements.
NC No Connect No Connect. This pin is not connected to the die.
NC
A8
NCNC
VSS
DQ6
DQ5DQ4
VCC
A13
DQ3
A12
DQ2
DQ1
DQ0
OE
A9
CE
NCA0A1A2A3A4
A5A6
A11
A7
A14
NCNCNCNCNC
12345678910111213141516171819202122 23
242526272829303132333435363738394041424344
Top View(not to scale)
A10NC
WE
DQ7
HSBNC
VSSVCC
VCAP
NC
(x8)
[4]
[5]
[2]
[3]
[1][1]
44 - TSOP II 32 - SOIC(x8)
Top View(not to scale)
Notes1. Address expansion for 1 Mbit. NC pin not connected to die2. Address expansion for 2 Mbit. NC pin not connected to die.3. Address expansion for 4 Mbit. NC pin not connected to die.4. Address expansion for 8 Mbit. NC pin not connected to die.5. Address expansion for 16 Mbit. NC pin not connected to die.
Device OperationThe CY14E256LA nvSRAM is made up of two functionalcomponents paired in the same physical cell. They are an SRAMmemory cell and a nonvolatile QuantumTrap cell. The SRAMmemory cell operates as a standard fast static RAM. Data in theSRAM is transferred to the nonvolatile cell (the STOREoperation), or from the nonvolatile cell to the SRAM (the RECALLoperation). Using this unique architecture, all cells are stored andrecalled in parallel. During the STORE and RECALL operations,SRAM read and write operations are inhibited. TheCY14E256LA supports infinite reads and writes similar to atypical SRAM. In addition, it provides infinite RECALL operationsfrom the nonvolatile cells and up to 1 million STORE operations.Refer to the Truth Table For SRAM Operations on page 15 for acomplete description of read and write modes.
SRAM ReadThe CY14E256LA performs a read cycle when CE and OE areLOW and WE and HSB are HIGH. The address specified on pinsA0-14 determines which of the 32,768 data bytes each areaccessed. When the read is initiated by an address transition,the outputs are valid after a delay of tAA (read cycle 1). If the readis initiated by CE or OE, the outputs are valid at tACE or at tDOE,whichever is later (read cycle 2). The data output repeatedlyresponds to address changes within the tAA access time withoutthe need for transitions on any control input pins. This remainsvalid until another address change or until CE or OE is broughtHIGH, or WE or HSB is brought LOW.
SRAM WriteA write cycle is performed when CE and WE are LOW and HSBis HIGH. The address inputs must be stable before entering thewrite cycle and must remain stable until CE or WE goes HIGH atthe end of the cycle. The data on the common I/O pins DQ0–7 arewritten into the memory if the data is valid tSD before the end ofa WE-controlled write or before the end of a CE-controlled write.Keep OE HIGH during the entire write cycle to avoid data buscontention on common I/O lines. If OE is left LOW, internalcircuitry turns off the output buffers tHZWE after WE goes LOW.
AutoStore OperationThe CY14E256LA stores data to the nvSRAM using one of thefollowing three storage operations: Hardware STORE activatedby HSB; Software STORE activated by an address sequence;AutoStore on device power down. The AutoStore operation is aunique feature of QuantumTrap technology and is enabled bydefault on the CY14E256LA.During a normal operation, the device draws current from VCC tocharge a capacitor connected to the VCAP pin. This storedcharge is used by the chip to perform a single STORE operation.If the voltage on the VCC pin drops below VSWITCH, the partautomatically disconnects the VCAP pin from VCC. A STOREoperation is initiated with power provided by the VCAP capacitor.Note If the capacitor is not connected to VCAP pin, AutoStoremust be disabled using the soft sequence specified in PreventingAutoStore on page 6. In case AutoStore is enabled without acapacitor on VCAP pin, the device attempts an AutoStoreoperation without sufficient charge to complete the Store. Thismay corrupt the data stored in nvSRAM.
Figure 2 shows the proper connection of the storage capacitor(VCAP) for automatic STORE operation. Refer to DC ElectricalCharacteristics on page 8 for the size of VCAP. The voltage onthe VCAP pin is driven to VCC by a regulator on the chip. Place apullup on WE to hold it inactive during power up. This pullup isonly effective if the WE signal is tristate during power up. ManyMPUs tristate their controls on power up. This must be verifiedwhen using the pullup. When the nvSRAM comes out ofpower-on-RECALL, the MPU must be active or the WE heldinactive until the MPU comes out of reset.To reduce unnecessary nonvolatile stores, AutoStore andHardware STORE operations are ignored unless at least onewrite operation has taken place since the most recent STORE orRECALL cycle. Software initiated STORE cycles are performedregardless of whether a write operation has taken place. TheHSB signal is monitored by the system to detect if an AutoStorecycle is in progress.
Figure 2. AutoStore Mode
Hardware STORE OperationThe CY14E256LA provides the HSB pin to control andacknowledge the STORE operations. Use the HSB pin torequest a Hardware STORE cycle. When the HSB pin is drivenLOW, the CY14E256LA conditionally initiates a STOREoperation after tDELAY. An actual STORE cycle only begins if awrite to the SRAM has taken place since the last STORE orRECALL cycle. The HSB pin also acts as an open drain driver(internal 100kΩ weak pullup resistor) that is internally drivenLOW to indicate a busy condition when the STORE (initiated byany means) is in progress.Note After each Hardware and Software STORE operation HSBis driven HIGH for a short time (tHHHD) with standard output highcurrent and then remains HIGH by internal 100kΩ pullup resistor.SRAM write operations that are in progress when HSB is drivenLOW by any means are given time (tDELAY) to complete beforethe STORE operation is initiated. However, any SRAM writecycles requested after HSB goes LOW are inhibited until HSBreturns HIGH. In case the write latch is not set, HSB is not drivenLOW by the CY14E256LA. But any SRAM read and write cyclesare inhibited until HSB is returned HIGH by MPU or otherexternal source.
During any STORE operation, regardless of how it is initiated,the CY14E256LA continues to drive the HSB pin LOW, releasingit only when the STORE is complete. Upon completion of theSTORE operation, the CY14E256LA remains disabled until theHSB pin returns HIGH. Leave the HSB unconnected if it is notused.
Hardware RECALL (Power Up)During power up or after any low power condition(VCC< VSWITCH), an internal RECALL request is latched. WhenVCC again exceeds the sense voltage of VSWITCH, a RECALLcycle is automatically initiated and takes tHRECALL to complete.During this time, HSB is driven low by the HSB driver.
Software STOREData is transferred from SRAM to the nonvolatile memory by asoftware address sequence. The CY14E256LA SoftwareSTORE cycle is initiated by executing sequential CE controlledread cycles from six specific address locations in exact order.During the STORE cycle an erase of the previous nonvolatiledata is first performed, followed by a program of the nonvolatileelements. After a STORE cycle is initiated, further input andoutput are disabled until the cycle is completed.Because a sequence of READs from specific addresses is usedfor STORE initiation, it is important that no other read or writeaccesses intervene in the sequence, or the sequence is abortedand no STORE or RECALL takes place.To initiate the Software STORE cycle, the following readsequence must be performed:
1. Read Address 0x0E38 Valid READ2. Read Address 0x31C7 Valid READ3. Read Address 0x03E0 Valid READ4. Read Address 0x3C1F Valid READ5. Read Address 0x303F Valid READ6. Read Address 0x0FC0 Initiate STORE CycleThe software sequence may be clocked with CE controlled readsor OE controlled reads, with WE kept HIGH for all the six READsequences. After the sixth address in the sequence is entered,the STORE cycle commences and the chip is disabled. HSB isdriven LOW. After the tSTORE cycle time is fulfilled, the SRAM isactivated again for the read and write operation.
Software RECALLData is transferred from nonvolatile memory to the SRAM by asoftware address sequence. A Software RECALL cycle isinitiated with a sequence of read operations in a manner similarto the Software STORE initiation. To initiate the RECALL cycle,the following sequence of CE controlled read operations must beperformed:1. Read Address 0x0E38 Valid READ2. Read Address 0x31C7 Valid READ3. Read Address 0x03E0 Valid READ4. Read Address 0x3C1F Valid READ5. Read Address 0x303F Valid READ6. Read Address 0x0C63 Initiate RECALL CycleInternally, RECALL is a two step procedure. First, the SRAM datais cleared. Next, the nonvolatile information is transferred into theSRAM cells. After the tRECALL cycle time, the SRAM is againready for read and write operations. The RECALL operationdoes not alter the data in the nonvolatile elements.
Table 2. Mode Selection
CE WE OE A14 - A0[6] Mode I/O Power
H X X X Not Selected Output High Z Standby
L H L X Read SRAM Output Data Active
L L X X Write SRAM Input Data Active
L H L 0x0E380x31C70x03E00x3C1F0x303F0x0B45
Read SRAMRead SRAMRead SRAMRead SRAMRead SRAM
AutoStore Disable
Output DataOutput DataOutput DataOutput DataOutput DataOutput Data
Active[7]
Notes6. While there are 15 address lines on the CY14E256LA, only the lower 14 are used to control software modes. 7. The six consecutive address locations must be in the order listed. WE must be HIGH during all six cycles to enable a nonvolatile cycle.
Preventing AutoStoreThe AutoStore function is disabled by initiating an AutoStoredisable sequence. A sequence of read operations is performedin a manner similar to the Software STORE initiation. To initiatethe AutoStore disable sequence, the following sequence of CEcontrolled read operations must be performed:1. Read address 0x0E38 Valid READ2. Read address 0x31C7 Valid READ3. Read address 0x03E0 Valid READ4. Read address 0x3C1F Valid READ5. Read address 0x303F Valid READ6. Read address 0x0B45 AutoStore DisableThe AutoStore is reenabled by initiating an AutoStore enablesequence. A sequence of read operations is performed in amanner similar to the Software RECALL initiation. To initiate theAutoStore enable sequence, the following sequence of CEcontrolled read operations must be performed:1. Read address 0x0E38 Valid READ2. Read address 0x31C7 Valid READ3. Read address 0x03E0 Valid READ4. Read address 0x3C1F Valid READ5. Read address 0x303F Valid READ6. Read address 0x0B46 AutoStore Enable
If the AutoStore function is disabled or reenabled, a manualSTORE operation (Hardware or Software) must be issued tosave the AutoStore state through subsequent power downcycles. The part comes from the factory with AutoStore enabled.
Data ProtectionThe CY14E256LA protects data from corruption during lowvoltage conditions by inhibiting all externally initiated STOREand write operations. The low voltage condition is detected whenVCC is less than VSWITCH. If the CY14E256LA is in a write mode(both CE and WE are LOW) at power up, after a RECALL orSTORE, the write is inhibited until the SRAM is enabled aftertLZHSB (HSB to output active). This protects against inadvertentwrites during power up or brown out conditions.
Noise ConsiderationsRefer to CY application note AN1064.
L H L 0x0E380x31C70x03E00x3C1F0x303F0x0B46
Read SRAMRead SRAMRead SRAMRead SRAMRead SRAM
AutoStore Enable
Output DataOutput DataOutput DataOutput DataOutput DataOutput Data
Best PracticesnvSRAM products have been used effectively for over 15 years.While ease-of-use is one of the product’s main system values,experience gained working with hundreds of applications hasresulted in the following suggestions as best practices:
■ The nonvolatile cells in this nvSRAM product are delivered from Cypress with 0x00 written in all cells. Incoming inspection routines at customer or contract manufacturer’s sites sometimes reprogram these values. Final NV patterns are typically repeating patterns of AA, 55, 00, FF, A5, or 5A. End product’s firmware should not assume an NV array is in a set programmed state. Routines that check memory content values to determine first time system configuration, cold or warm boot status, and so on should always program a unique NV pattern (that is, complex 4-byte pattern of 46 E6 49 53 hex or more random bytes) as part of the final system manufac-turing test to ensure these system routines work consistently.
■ Power up boot firmware routines should rewrite the nvSRAM into the desired state (for example, autoStore enabled). While the nvSRAM is shipped in a preset state, best practice is to again rewrite the nvSRAM into the desired state as a safeguard against events that might flip the bit inadvertently such as program bugs and incoming inspection routines.
■ The VCAP value specified in this data sheet includes a minimum and a maximum value size. Best practice is to meet this requirement and not exceed the maximum VCAP value because the nvSRAM internal algorithm calculates VCAP charge and discharge time based on this maximum VCAP value. Customers that want to use a larger VCAP value to make sure there is extra store charge and store time should discuss their VCAP size selection with Cypress to understand any impact on the VCAP voltage level at the end of a tRECALL period.
Maximum RatingsExceeding maximum ratings may shorten the useful life of thedevice. These user guidelines are not tested.Storage Temperature ..................................–65°C to +150°CMaximum Accumulated Storage Time:
At 150°C Ambient Temperature........................ 1000hAt 85°C Ambient Temperature ..................... 20 Years
Ambient Temperature with Power Applied ..–55°C to +150°CSupply Voltage on VCC Relative to GND.......... –0.5V to 7.0VVoltage Applied to Outputs in High Z State ...........................................–0.5V to VCC + 0.5VInput Voltage ............................................ –0.5V to Vcc+0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential.................. –2.0V to VCC + 2.0VPackage Power Dissipation Capability (TA = 25°C) ....................................................1.0WSurface Mount Pb SolderingTemperature (3 Seconds)...........................................+260°CDC Output Current (1 output at a time, 1s duration) ....15 mAStatic Discharge Voltage ......................................... > 2001V(per MIL-STD-883, Method 3015)Latch Up Current................................................... > 200 mA
Operating RangeRange Ambient Temperature VCC
Industrial –40°C to +85°C 4.5V to 5.5V
DC Electrical CharacteristicsOver the Operating Range (VCC = 4.5V to 5.5V)
Parameter Description Test Conditions Min Typ[8] Max UnitVCC Power Supply 4.5 5.0 5.5 VICC1 Average VCC Current tRC = 25 ns
All Inputs Don’t Care, VCC = MaxAverage current for duration tSTORE
10 mA
ICC3 Average VCC Current at tRC= 200 ns,VCC (Typ), 25°C
All Inputs cycling at CMOS levels.Values obtained without output loads (IOUT = 0 mA).
35 mA
ICC4 Average VCAP Current during AutoStore Cycle
All Inputs Don’t Care. Average current for duration tSTORE 5 mA
ISB VCC Standby Current CE > (VCC – 0.2V). VIN < 0.2V or > (VCC – 0.2V). Standby current level after nonvolatile cycle is complete.Inputs are static. f = 0 MHz.
5 mA
IIX[9] Input Leakage Current (except HSB)
VCC = Max, VSS < VIN < VCC –1 +1 μA
Input Leakage Current (for HSB)
VCC = Max, VSS < VIN < VCC –100 +1 μA
IOZ Off-State Output Leakage Current
VCC = Max, VSS < VOUT < VCC, CE or OE > VIH or WE < VIL –1 +1 μA
VIH Input HIGH Voltage 2.0 VCC + 0.5
V
VIL Input LOW Voltage Vss – 0.5 0.8 VVOH Output HIGH Voltage IOUT = –2 mA 2.4 VVOL Output LOW Voltage IOUT = 4 mA 0.4 VVCAP Storage Capacitor Between VCAP pin and VSS, 6V Rated 61 68 180 μF
Notes8. Typical values are at 25°C, VCC= VCC (Typ). Not 100% tested.9. The HSB pin has IOUT = -2 uA for VOH of 2.4V when both active high and low drivers are disabled. When they are enabled standard VOH and VOL are valid. This
AC Test ConditionsInput Pulse Levels ....................................................0V to 3VInput Rise and Fall Times (10% - 90%) ........................ <3 nsInput and Output Timing Reference Levels .................... 1.5V
Data Retention and EnduranceParameter Description Min Unit
DATAR Data Retention 20 YearsNVC Nonvolatile STORE Operations 1,000 K
CapacitanceParameter[10] Description Test Conditions Max Unit
CIN Input Capacitance TA = 25°C, f = 1 MHz,VCC = VCC (Typ)
7 pFCOUT Output Capacitance 7 pF
Thermal ResistanceParameter[10] Description Test Conditions 44-TSOP II 32-SOIC Unit
ΘJA Thermal Resistance(Junction to Ambient)
Test conditions follow standard test methods and procedures for measuring thermal impedance, in accordance with EIA/JESD51.
41.74 41.55 °C/W
ΘJC Thermal Resistance(Junction to Case)
11.90 24.43 °C/W
Figure 3. AC Test Loads
5.0V
OUTPUT
5 pF
R1
R2512Ω
5.0V
OUTPUT
30 pF
R1
R2512Ω
for tri-state specs 963Ω 963Ω
Note10. These parameters are guaranteed by design and are not tested.
tPD[10] tPS Chip Disable to Power Standby 25 45 ns
SRAM Write CycletWC tWC Write Cycle Time 25 45 nstPWE tWP Write Pulse Width 20 30 nstSCE tCW Chip Enable To End of Write 20 30 nstSD tDW Data Setup to End of Write 10 15 nstHD tDH Data Hold After End of Write 0 0 nstAW tAW Address Setup to End of Write 20 30 nstSA tAS Address Setup to Start of Write 0 0 nstHA tWR Address Hold After End of Write 0 0 nstHZWE
tLZWE[10, 13] tOW Output Active after End of Write 3 3 ns
Address
Data Output
Address Valid
Previous Data Valid Output Data Valid
tRC
tAA
tOHA
Notes11. WE must be HIGH during SRAM read cycles.12. Device is continuously selected with CE and OE LOW.13. Measured ±200 mV from steady state output voltage.14. If WE is low when CE goes low, the outputs remain in the high impedance state.15. HSB must remain HIGH during READ and WRITE cycles.
tDELAY[19] Time Allowed to Complete SRAM Write Cycle 25 ns
VSWITCH Low Voltage Trigger Level 4.4 V
tVCCRISE[10] VCC Rise Time 150 µs
VHDIS[10] HSB Output Disable Voltage 1.9 V
tLZHSB[10] HSB To Output Active Time 5 µs
tHHHD[10] HSB High Active Time 500 ns
Switching WaveformsFigure 8. AutoStore or Power Up RECALL[20]
VSWITCH
VHDIS
VVCCRISE tSTORE tSTOREtHHHD
tHHHD
tDELAY
tDELAY
tLZHSB tLZHSB
tHRECALLtHRECALL
HSB OUT
AutoStore
POWER-UP
RECALL
Read & WriteInhibited(RWI)
POWER-UPRECALL
Read & Write BROWNOUT
AutoStore
POWER-UPRECALL
Read & Write POWERDOWN
AutoStore
Note Note
NoteNote
VCC
18 18
2121
Notes17. tHRECALL starts from the time VCC rises above VSWITCH.18. If an SRAM write has not taken place since the last nonvolatile cycle, no AutoStore or Hardware STORE takes place.19. On a Hardware STORE and AutoStore initiation, SRAM write operation continues to be enabled for time tDELAY.20. Read and Write cycles are ignored during STORE, RECALL, and while VCC is below VSWITCH.21. During power up and power down, HSB glitches only when HSB pin is pulled up through an external resistor.
UnitMin Max Min MaxtRC STORE/RECALL Initiation Cycle Time 25 45 nstSA Address Setup Time 0 0 nstCW Clock Pulse Width 20 30 nstHA Address Hold Time 0 0 nstRECALL RECALL Duration 200 200 µs
Switching Waveforms
Figure 9. CE and OE Controlled Software STORE/RECALL Cycle[23]
Figure 10. AutoStore Enable / Disable Cycle
tRC tRC
tSA tCW
tCW
tSA
tHA
tLZCE
tHZCE
tHA
tHAtHA
tSTORE/tRECALL
tHHHD
tLZHSBHigh Impedance
Address #1 Address #6Address
CE
OE
HSB (STORE only)
DQ (DATA)
RWI
tDELAY Note24
tRC tRC
tSA tCW
tCW
tSA
tHA
tLZCE
tHZCE
tHA
tHA
tHA
tDELAY
Address #1 Address #6Address
CE
OE
DQ (DATA)
tSS
Note24
Notes22. The software sequence is clocked with CE controlled or OE controlled reads.23. The six consecutive addresses must be read in the order listed in Table 2 on page 5. WE must be HIGH during all six consecutive cycles.24. DQ output data at the sixth read may be invalid since the output is disabled at tDELAY time.
Switching WaveformsFigure 11. Hardware STORE Cycle[18]
Figure 12. Soft Sequence Processing[25, 26]
Hardware STORE Cycle
Parameters DescriptionCY14E256LA
UnitMin Max
tDHSB HSB To Output Active Time when write latch not set 25 nstPHSB Hardware STORE Pulse Width 15 nstSS
[25, 26] Soft Sequence Processing Time 100 μs
tPHSB
tPHSB
tDELAY tDHSB
tDELAY
tSTOREtHHHD
tLZHSB
Write latch set
Write latch not set
HSB (IN)
HSB (OUT)
DQ (Data Out)
RWI
HSB (IN)
HSB (OUT)
RWI
HSB pin is driven high to VCC only by Internal
SRAM is disabled as long as HSB (IN) is driven low.HSB driver is disabled
tDHSB
100kOhm resistor,
Address #1 Address #6 Address #1 Address #6
Soft SequenceCommand
tSS tSS
CE
Address
VCC
tSA tCW
Soft SequenceCommand
tCW
Notes25. This is the amount of time it takes to take action on a soft sequence command. Vcc power must remain HIGH to effectively register command.26. Commands such as STORE and RECALL lock out I/O until operation is complete which further increases this time. See the specific command.
Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign),United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of,and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypressintegrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited withoutthe express written permission of Cypress.
Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIESOF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does notassume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems wherea malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturerassumes all risk of such use and in doing so indemnifies Cypress against all charges.
Use may be limited by and subject to the applicable Cypress software license agreement.
Document History Page
Sales, Solutions, and Legal InformationWorldwide Sales and Design SupportCypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the officeclosest to you, visit us at Cypress Locations.
ProductsAutomotive cypress.com/go/automotiveClocks & Buffers cypress.com/go/clocksInterface cypress.com/go/interfaceLighting & Power Control cypress.com/go/powerpsoc
