ð× U Z ¢ RS-232 M 5 L Ô ò n © ð × U Z ¢RS-232 M _ { ï / ¥ m ADM3251E Rev. E Information...

$Page 1: ð× U Z ¢ RS-232 M 5 L Ô ò n © ð × U Z ¢RS-232 M _ { ï / ¥ m ADM3251E Rev. E Information furnished by Analog Devices is believed to be accurate and reliable. However, no$
ADI ADI ADI

RS-232

/

ADM3251E

Rev. E Information furnished by Analog Devices is believed to be accurate and reliable. However, no

responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other

rights of third parties that may result from its use. Specifications subject to change without notice. No

license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

Trademarks and registered trademarks are the property of their respective owners.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: 781.329.4700 www.analog.com

Fax: 781.461.3113 ©2008–2010 Analog Devices, Inc. All rights reserved.

0738

8-00

1

DECODE

RECT REG

V–

C40.1μF16V

VOLTAGEDOUBLER

C1+ C1– V+ VISO C2+ C2–

R

T

VOLTAGEINVERTER

VCC

ROUT

TIN

GND GNDISO

RIN*

TOUT

ADM3251E

OSC

ENCODE

ENCODE

DECODE

*INTERNAL 5k PULL-DOWN RESISTOR ON THE RS-232 INPUT.

0.1μF

C30.1μF10V

C20.1μF16V0.1μF

C10.1μF16V

1.

2.5 kV ( )RS-232

isoPower DC/DC

460 kbps

1 Tx 1 Rx

EIA/TIA-232E

RIN

TOUT

ESD

±8 kV:

±15 kV:

0.1μF

>25 kV/μs

UL

1 2500 Vrms UL 1577

VDE

DIN EN 60747-5-2 (VDE 0884 Teil 2): 2003-01

CSA #5A

-40°C +85°C

20 SOIC

RS-232

/

ADM3251E 2.5 kV RS-232/ V.285 V RIN TOUT

ESDRS-232

ADM3251E isoPower™DC-DC Analog Devices, Inc.(

ADI) iCoupler®DC-DC

ADM3251E isoPower(PCB)

AN-0971 isoPower

ADM3251E EIA/TIA-232E ITU-T V. 28460 kbps

/ 0.1 μF5 V

ADM3251E 20 SOIC−40°C +85°C

ADM3251E

Rev. E | Page 2 of 16

................................................................................................... 1 ................................................................................................... 1

........................................................................................... 1 ................................................................................................... 1

........................................................................................... 2 ........................................................................................... 3

.................................................................................. 5 .................................................................................. 5

............................................................ 5DIN EN 60747-5-2 (VDE 0884 Teil 2):2003-01

............................................................................................... 6 ............................................................................. 7

ESD ................................................................................... 7 ..................................................................... 8

.................................................................................. 9

........................................................................................ 11 .............................................................. 11 .............................................................. 12

5.0 V EIA/TIA-232E .................................... 12EIA/TIA-232E 5 V ....................................... 12

................................................................................ 12 .................................................................................... 12

................................................................................ 12 ........................................................................................ 13

PCB ................................................................................ 13EMI PCB ............................................................ 13

....................................................................... 14 ........................................................................................ 15

................................................................................ 15

2010 5 — D E 　　　　　　　　　　　 .................................................................................. 1

4 ............................................................................................. 5

2010 3 — C D 　　　　　　　　　　　 ..................................................................... 1

4 5 ...................................................................................... 5“DIN V VDE V 0884-10 (VDE V 0884-10):2006-12

( )” “DIN EN 60747-5-2 (VDE 0884 Teil 2):2003-01 ” ..................................................................................... 6

6 .................. 6EMI PCB .................... 13

9 10 ........................................................ 13PCB ........................................................................ 13

.......................................................... 1422 ................................................................... 14

2010 1 — B C 　　　　　　　　　　　4 ............................................................................................. 5

2009 1 — A B 　　　　　　　　　　　1 .................................................................................. 1

ICC(DISABLE) 2.5 mA ............. 44 ............................................................................................. 513 ......................................................................................... 11

2008 9 — 0 A 　　　　　　　　　　　1 ................................................................... 32 ................................................................... 4

................................................................................ 14

2008 7 — 0: 　　　　

ADM3251E


1./

VCC 4.5 5.5 V DC-DC VCC(ENABLE)

1 4.5 V DC-DC VCC(ENABLE)

1 3.7 V

DC-DC ICC(ENABLE) 110 mA VCC= 5.5 V，

145 mA VCC = 5.5 V, RL = 3 kΩ VISO

2 5.0 V IISO = 0 μA

TIN ITIN −10 +0.01 +10 μA

VTINL 0.3 VCC V VTINH 0.7 VCC V

ROUT VROUTH VCC − 0.1 VCC V IROUTH = −20 μA

VCC − 0.5 VCC − 0.3 V IROUTH = −4 mA VROUTL 0.0 0.1 V IROUTH = 20 μA

0.3 0.4 V IROUTH = 4 mA RS-232

RIN EIA-232 3 −30 +30 V EIA-232 0.6 2.0 V EIA-232 2.1 2.4 V EIA-232 0.1 V EIA-232 3 5 7 kΩ

TOUT (RS-232) ±5 ±5.7 V RL= 3 kΩ

300 Ω VISO = 0 V (RS-232) ±12 mA

460 kbps RL= 3 kΩ 7 kΩ, CL= 50 pF 1000 pF

tPHL 190 ns tPLH 135 ns

650 ns RL = 3 kΩ, CL = 1000 pF 80 ns 70 ns

3 5.5 10 30 V/μs +3 V −3 V −3 V +3 V, VCC= +3.3 V, RL= 3 kΩ, CL= 1000 pF, TA= 25°C

/ tR/tF(10% 90%) 2.3 ns CL= 15 pF CMOS

4 25 kV/μs VCM= 1 kV =800 V4 25 kV/μs VCM= 1 kV =800 V

ESD (RIN TOUT ) ±15 kV ±8 kV

1 / DC-DC / VCC2 VISO3 4 VCM VCM

/ TA = 25°C VCC = 5.0 V DC-DC

ADM3251E


2./

VCC 3.0 3.7 V DC-DC VCC(ENABLE)

1 3.7 V DC-DC

VISO2 3.0 5.5 V

ICC(DISABLE) 2.5 mA IISO(DISABLE) 12 mA VISO = 5.5 V, RL = 3 kΩ IISO(DISABLE) 6.2 mA RL = 3 kΩ

TIN

ITIN −10 +0.01 +10 μA VTINL 0.3 VCC V VTINH 0.7 VCC V

ROUT VROUTH VCC − 0.1 VCC V IROUTH = −20 μA

VCC − 0.5 VCC − 0.3 V IROUTH = −4 mA VROUTL 0.0 0.1 V IROUTH = 20 μA

0.3 0.4 V IROUTH = 4 mA RS-232

RIN EIA-232 3 −30 +30 V EIA-232 0.6 1.3 V EIA-232 1.6 2.4 V EIA-232 0.3 V EIA-232 3 5 7 kΩ

TOUT (RS-232) ±5 ±5.7 V RL = 3 kΩ

300 Ω VISO = 0 V (RS-232) ±11 mA

460 kbps RL = 3 kΩ 7 kΩ, CL = 50 pF 1000 pF

tPHL 190 ns tPLH 135 ns

650 ns RL = 3 kΩ, CL = 1000 pF 80 ns 55 ns

3 5.5 10 30 V/μs +3 V −3 V −3 V +3 V, VCC = 3.3 V, RL = 3 kΩ, CL = 1000 pF, TA = 25°C

/ tR/tF(10% 90%) 2.3 ns CL= 15 pF CMOS

4 25 kV/μs VCM= 1 kV =800 V4 25 kV/μs VCM= 1 kV =800 V

ESD (RIN TOUT ) ±15 kV ±8 kV 1 / DC-DC / VCC2 VISO3 4 VCM VCM

/ TA = 25°C VCC = 3.3 V(DC-DC ) VISO = 3.3 V

ADM3251E


3.

( ) RI-O 1012 Ω ( ) CI-O 2.2 pF f = 1 MHz

CI 4.0 pF IC θJA 47.05 °C/W

4.UL1 VDE2 CSA

1577

E214100

DIN EN 60747-5-2 (VDE 0884 Teil 2):2003-01

2471900-4880-0001/123328

CSA #5A

CSA 60950-1-07IEC 60950-1 400 V rms (566 V )

2268268 1 UL1577, ADM3251E 1 ≥ 3000 V rms ( 5 μA)2 ADM3251E 1 ≥ 4000 V rms ( 5 pC)

5.

2500 V 1( ) L(I01) 7.7 mm

L(I02) 4.16 mm

0.017 mm ( ) CTI >175 V DIN IEC 112/VDE 0303 Part 1

IIIa 50 VIORM 425 V

ADM3251E


DIN EN 60747-5-2 (VDE 0884 Teil 2):2003-01

6.

DIN VDE 0110 ≤ 150 V rms I IV ≤ 300 V rms I III

40/105/21 2 VIORM 424 V

b1 VIORM × 1.875 = VPR, 100%tm= 1 < 5 pC

VPR 795 V

tTR= 10 VTR 4000 V TS 150 °C IS1 531 mA

TS VIO= 500 V RS >109 Ω

ADM3251E


7.

VCC, VISO −0.3 V +6 V V+ (VCC − 0.3 V) +13 V V− –13 V +0.3 V

TIN −0.3 V (VCC + 0.3 V) RIN ±30 V

TOUT ±15 V ROUT −0.3 V (VCC + 0.3 V)

TOUT

θJA 47.05°C/W

−40°C +85°C −65°C +150°C

( 30 ) 260°C

ESD

ESD( )

ESDESD

ADM3251E


NC 1

VCC 2

VCC 3

GND 4

VISO20

V+19

C1+18

C1–17

GND 5 TOUT16

GND 6 RIN15

GND 7 C2+14

ROUT 8 C2–13

TIN 9 V–12

GND 10 GNDISO11

NC = NO CONNECT

ADM3251ETOP VIEW

(Not to Scale)

0738

8-00

2

2.

8.

1 NC 2, 3 VCC VCC 0.1 μF VCC 4.5 V 5.5 V

DC-DC 3.0 V 3.7 VDC-DC

4, 5, 6, 7, 10 GND 地。8 ROUT CMOS9 TIN ( ) TTL/CMOS11 GNDISO 12 V− 13, 14 C2−, C2+ C2

0.1 μF 10 μF 15 RIN RS-23216 TOUT ( ) RS-232 17, 18 C1−, C1+ C1

0.1 μF 10 μF19 V+ 20 VISO VISO 0.1 μF

DC-DC VISODC-DC 3.0 V 5.5 V

ADM3251E


12

8

4

0

–4

–8

–120 200 400 600 800 1000

LOAD CAPACITANCE (pF)

Tx

OU

TP

UT

(V

)

0738

8-00

4

Tx LOW (VCC = 5V)

Tx LOW (VISO = 3.3V)

Tx HIGH (VCC = 5V)

Tx HIGH (VISO = 3.3V)

3. /(460 kbps)

12

10

8

6

4

2

0

–2

–4

–6

–8

–104.5 4.7 4.9 5.1 5.3 5.5

VCC (V)

Tx

OU

TP

UT

(V

)

0738

8-00

5

Tx OUTPUT HIGH

Tx OUTPUT LOW

4. / VCC (RL = 3 kΩ)

12

8

4

0

–4

–8

–12

10

6

2

–2

–6

–10

3.0 3.5 4.0 4.5 5.0 5.5VISO (V)

Tx

OU

TP

UT

(V

)

0738

8-00

9

Tx OUTPUT HIGH

Tx OUTPUT LOW

5. / VISO (RL = 3 kΩ)

12

10

8

6

4

2

0

–2

–4

–6

–8

–10

–120 1 2 3 4

LOAD CURRENT (mA)

Tx

OU

TP

UT

(V

)

0738

8-00

6

Tx OUTPUT LOW (VCC = 5V)

Tx OUTPUT LOW (VISO = 3.3V)

Tx OUTPUT HIGH (VCC = 5V)

Tx OUTPUT HIGH (VISO = 3.3V)

6. /

15

10

5

0

–5

–10

–150 1 2 3

LOAD CURRENT (mA)

V+,

V–

(V)

0738

8-00

7

4

V+ (VCC = 5V)

V– (VCC = 5V)

V+ (VISO = 3.3V)

V– (VISO = 3.3V)

7. V+, V−

400

V+

V–

350

300

250

200

150

100

50

04.50 4.75 5.00 5.25 5.50

VCC (V)

CH

AR

GE

PU

MP

IMP

ED

AN

CE

()

0738

8-00

8

8. VCC

ADM3251E


400

V–350

300

250

200

150

100

50

03.00 3.25 3.50 3.75 4.00 4.25 4.50 4.75 5.00 5.25 5.50

VISO (V)

CH

AR

GE

PU

MP

IMP

ED

AN

CE

()

0738

8-01

0

V+

9. VISO

200

180

160

140

120

100

80

60

40

20

00 46 92 138 184 230 276 322 368 414 460

DATA RATE (kbps)

SU

PP

LY

CU

RR

EN

T (

mA

)

0738

8-00

3

VCC = 4.5V

VCC = 5.5V

VCC = 5V

10.

0738

8-01

2

5V/D

IV5V

/DIV

TIME (500ns/DIV)

2

1

VCC = 5VLOAD = 3k AND 1nF

11. 460 kbps

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

04.50 4.75 5.00 5.25 5.50

VCC (V)

TIN

VO

LT

AG

E T

HR

ES

HO

LD

(V

)

0738

8-01

1

HIGH THRESHOLD

LOW THRESHOLD

12. TIN VCC

ADM3251E


0738

8-01

3

DECODE

RECT REG

V–

C40.1μF16V

VOLTAGEDOUBLER

C1+ C1– V+ VISO C2+ C2–

R

T

VOLTAGEINVERTER

VCC

ROUT

TIN

GND GNDISO

RIN*

TOUT

ADM3251E

OSC

ENCODE

ENCODE

DECODE

*INTERNAL 5k PULL-DOWN RESISTOR ON THE RS-232 INPUT.

0.1μF

C30.1μF10V

C20.1μF16V0.1μF

C10.1μF16V

13.

++

C30.1μF10V

+ C10.1μF16V

+ C20.1μF16V

0.1μF

+C40.1μF16V

EIA/TIA-232E OUTPUT

EIA/TIA-232E INPUT

VISO

V+

C1+

C1–

TOUT

RIN

C2+

C2–

V–

GNDISO

0738

8-01

4

ISOLATIONBARRIER

CMOS OUTPUT

CMOS INPUT

4.5V TO 5.5V

VCC

ROUT

TIN

GND

0.1μFADM3251E

14. DC-DC

(VCC = 4.5 V 5.5 V)

++

C30.1μF10V

+ C10.1μF16V

+ C20.1μF16V

0.1μF

+C40.1μF16V

EIA/TIA-232E OUTPUT

EIA/TIA-232E INPUT

VISO

V+

C1+

C1–

TOUT

RIN

C2+

C2–

V–

GNDISO

0738

8-01

5

ISOLATIONBARRIER

CMOS OUTPUT

CMOS INPUT

3.0V TO 3.7V

3.0V TO 5.5VISOLATED SUPPLY

VCC

ROUT

TIN

GND

0.1μFADM3251E

15. DC-DC

(VCC = 3.0 V 3.7 V)

ADM3251E 2.5 kV RS-232

5.0 V EIA/TIA-232E EIA/TIA-232E 5.0 V

TIN TTL/CMOS TIN

(GND)(GNDISO)

(RIN) RS-232RIN ROUT

iCoupler

VCC DC-DC

ADM3251E DC-DCVCC

5.0 V VISO VISO

ADM3251E DC-DCADM3251E DC-DC VCC

VCC 4.5 V 5.5 VDC-DC DC-DC

3.0 V 3.7 V VCC

VISO VISO 3.0 V5.5 V 12 mA( )

IISO ADM3251E

ADM3251E


GND

C3C1

S1

S2

S3

S4

V+ = 2VISO+ +

INTERNALOSCILLATOR

VISO

VISO

0738

8-01

6

16.

GNDISO

C4C2

S1

S2

S3

S4

GNDISO+ +

INTERNALOSCILLATOR

V+

V– = –(V+)

FROMVOLTAGEDOUBLER

0738

8-01

7

17.

0V

RATED PEAK VOLTAGE

0738

8-01

9

18.

0V

RATED PEAK VOLTAGE

0738

8-02

0

19.

0V

RATED PEAK VOLTAGE

0738

8-02

1

20.

200 kHz5.0 V ±10.0 V

16 17C1 5.0 V 10.0 V

C2 +10.0 V −10.0 VC3 V+ VISO V+

GNDISO

C3 C4C1 C2 C3 C4

( 10 μF)

5.0 V EIA/TIA-232E

5.0 V RS-232VCC = 5.0 V RS-232

±10 V

ADM3251E 3

7 θJA θJA

JEDEC 4 PCBPCB PCB

ADIADM3251E

ADM3251EiCoupler

18 1920

EIA/TIA-232E 5 V

RS-2325.0 V 5 kΩ

±30 V5 kΩ 0 V

GND 10.1 V

ADM3251E EIA/TIA-232ERS-232 460

kbps

ADM3251E


9. PCB

1 VCC

234

NC

VCC

VCC

GND

VISO

V+

C1+

C1–

GND TOUT

GND RIN

GND C2+

ROUT C2–

TIN V–

GND GNDISO

0738

8-01

8

ADM3251E

VIA TO GNDISO

0.1μF

C3

C1

C2

0.1μF

NC = NO CONNECT

C4

10. EMIEMI 300 MHz 600 MHz

PCB 48 dB 53 dB PCB 36 dB 32 dB

EMI 12 dB 21 dB

21.

PCB

ADM3251E( 21) VCC

3 4 VISO

19 20 0.01 μF 0.1 μF20 mm

PCBPCB 21

4 5 6 7 10 11

EMI PCB

2 PCB EMIFCC B

3m 46 dBμV/m EMI

6 PCBAN-0971 EMI 6

PCB 9 PCBGerber

EMI10

FCC B

ADM3251E 300 MHz

PCB

AN-0971 isoPower

ADM3251E


ADP3330

IN

NR

+ +

SD103C

22μF 10μF

5VOUT

SD103C

78253

VCC

VCC

VCC

GND

ISOLATIONBARRIER

SD

ERRTRANSFORMERDRIVER

VCC

GND

VISO

GNDISO

ADM3251E

0738

8-02

2

22.

ADM3251E DC-DCVCC 3.0 V 3.7 V VISO

GNDISO 3.0 V 5.5 V

LDO22 5 V

180°

ADP3330ADM3251E (VISO)

ADM3251E


CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS(IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FORREFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN.

COMPLIANT TO JEDEC STANDARDS MS-013-AC

13.00 (0.5118)12.60 (0.4961)

0.30 (0.0118)0.10 (0.0039)

2.65 (0.1043)2.35 (0.0925)

10.65 (0.4193)10.00 (0.3937)

7.60 (0.2992)7.40 (0.2913)

0.75 (0.0295)0.25 (0.0098)

⋅ 45°

1.27 (0.0500)0.40 (0.0157)

COPLANARITY0.10 0.33 (0.0130)

0.20 (0.0079)

0.51 (0.0201)0.31 (0.0122)

SEATINGPLANE

8°0°

20 11

101

1.27(0.0500)

BSC

0607

06-A

23. 20 [SOIC_W]

(RW-20)

mm (inches)

1

ADM3251EARWZ −40°C +85°C 20 [SOIC_W] RW-20 ADM3251EARWZ-REEL −40°C +85°C 20 [SOIC_W] RW-20 EVAL-ADM3251EEBZ 1 Z = RoHS

ADM3251E


©2008–2010 Analog Devices, Inc. All rights reserved. Trademarks and

registered trademarks are the property of their respective owners.

D07388-0-5/10(E)

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