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DATA SHEET

Objective specificationSupersedes data of 1996 Feb 26File under Integrated Circuits, IC03

1997 Oct 09

INTEGRATED CIRCUITS

TEA1102; TEA1102TFast charge ICs for NiCd, NiMH,SLA and Lilon

1997 Oct 09 2

Philips Semiconductors Objective specification

Fast charge ICs for NiCd, NiMH, SLA andLilon

TEA1102; TEA1102T

FEATURES

• Safe and fast charging of Nickel Cadmium (NiCd),Nickel Metal Hydride (NiMH), Lithium Ion (LiIon), andSealed Lead Acid (SLA) batteries

• Three charge states for NiCd or NiMH; fast, top-off andtrickle or voltage regulation (optional)

• Two charge states for LiIon or SLA; current and voltagelimited

• Adjustable fast charge current [0.5CA to 5CA nominal(CA = Capacity Amperes)]

• DC top-off and pulsating trickle charge current (NiCdand NiMH)

• Temperature dependent ∆T/∆t battery full detection

• Automatic switch-over to accurate peak voltagedetection (−1⁄4%) if no NTC is applied

• Possibility to use both ∆T/∆t and peak voltage detectionas main fast charge termination

• Support of inhibit during all charging states

• Manual refresh with regulated adjustable dischargecurrent (NiCd and NiMH)

• Voltage regulation in the event of no battery

• Support of battery voltage based charge indication andbuzzer signalling at battery insertion, end of refresh andat full detection

• Single, dual and separate LED outputs for indication ofcharge status state

• Minimum and maximum temperature protection

• Time-out protection

• Short-circuit battery voltage protection

• Can be applied with few low-cost external components.

GENERAL DESCRIPTION

The TEA1102; TEA1102T are fast charge ICs which areable fast charge NiCd and NiMH, SLA and Lilon batteries.

The main fast charge termination for NiCd and NiMHbatteries are ∆T/∆t and peak voltage detection, both ofwhich are well proven techniques. The TEA1102;TEA1102T automatically switches over from ∆T/∆t to peakvoltage detection if the thermistor fails or is not present.The ∆T/∆t detection sensitivity is temperature dependent,thus avoiding false charge termination. Three chargestates can be distinguished; fast, top-off and trickle.

Charging Lilon and SLA batteries is completely different.When the batteries reach their maximum voltage(adjustable), the TEA1102; TEA1102T switches over fromcurrent regulation to voltage regulation. After a definedtime period, which is dependent on battery capacity andcharge current, charge is terminated. Due to small selfdischarge rates of Lilon and SLA batteries, trickle chargecan be omitted.

Several LEDs, as well as a buzzer, can be connected tothe TEA1102; TEA1102T for indicating battery insertion,charge states, battery full condition and protection mode.

The TEA1102; TEA1102T are contained in a 20-pinpackage and are manufactured in a BiCMOS process,essentially for integrating the complex mix of requirementsin a single chip solution. Only a few external low costcomponents are required in order to build a state of the artcharger.

ORDERING INFORMATION

TYPENUMBER

PACKAGE

NAME DESCRIPTION VERSION

TEA1102 DIP20 plastic dual in-line package; 20 leads (300 mil) SOT 146-1

TEA1102T SO20 plastic small outline package; 20 leads; body width 7.5 mm SOT163-1

1997 Oct 09 3



TEA1102; TEA1102T

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

VP supply voltage 5.5 − 11.5 V

IP supply current outputs off − 4 − mA

∆VNTC/VNTC temperature rate dependent(∆T/∆t) detection level

VNTC = 2 V;Tj = 0 to 50 °C

− −0.25 − %

∆Vbat/Vbat voltage peak detection level withrespect to top value

Vbat = 2 V;Tj = 0 to 50 °C

− −0.25 − %

IVbat input current battery monitor Vbat = 0.3 to 1.9 V − 1 − nA

Vbat(l) voltage at pin 19 for detecting lowbattery voltage

− 0.30 − V

IIB battery charge current fast charge 10 − 100 µA

top-off mode − 3 − µA

IIB(max) maximum battery charge current voltage regulation fullNiCd and NiMH battery

− 10 − µA

IIB(Lmax) maximum load current no battery − 40 − µA

fosc oscillator frequency 10 − 200 kHz

Vreg regulating voltage LiIon − 1.37 − V

SLA − 1.63 − V

NiCd and NiMH(pin Vstb open-circuit)

− 1.325 orVstb

− V

open battery − 1.9 − V

1997 Oct 09 4



TEA1102; TEA1102T

BLOCK DIAGRAM

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1997 Oct 09 5



TEA1102; TEA1102T

PINNING

SYMBOL PIN DESCRIPTION

Vstb 1 standby regulation voltage input(NiCd and NiMH)

IB 2 charge current setting

GND 3 ground

PSD 4 program pin sample divider

LED 5 LED output

POD 6 program pin oscillator divider

PTD 7 program pin time-out divider

NTC 8 temperature sensing input

MTV 9 maximum temperature voltage

RFSH 10 refresh input/output

FCT 11 fast charge termination andbattery chemistry identification

VP 12 positive supply voltage

Vsl 13 switched reference voltage output

OSC 14 oscillator input

PWM 15 pulse width modulator output

VS 16 stabilized reference voltage

LS 17 loop stability pin

AO 18 analog output

Vbat 19 single-cell battery voltage input

Rref 20 reference resistor pinFig.2 Pin configuration.

handbook, halfpage

TEA1102

MBH067

1

2

3

4

5

6

7

8

9

10

20

19

18

17

16

15

14

13

12

11

Vstb Rref

Vbat

Vsl

VP

VS

AO

LS

PWM

OSC

FCT

IB

GND

PSD

LED

POD

PTD

NTC

MTV

RFSH

1997 Oct 09 6



TEA1102; TEA1102T

INTRODUCTION

All battery types are initially fast charged with anadjustable high current. Fast charge termination dependsupon the battery type. With NiCd and NiMH batteries themain fast charge termination will be the ∆T/∆t (temperaturedetection) and/or peak voltage detection and with SLA andLiIon batteries when the battery voltage reaches2.45 or 4.1 V respectively.

The fast charge period is followed by a top-off period forNiCd and NiMH batteries and by a fill-up period for SLAand LiIon batteries. During the top-off period the NiCd andNiMH batteries are charged to maximum capacity byreduced adjustable charge current.

During the fill-up period the SLA and LiIon batteries arecharged to maximum capacity by a constant voltage and agradually decreasing current. The fill-up and top-off periodends after time-out or one hour respectively.

After the fill-up or top-off period, the TEA1102 switchesover to the standby mode. For NiCd and NiMH batterieseither the voltage regulation or trickle charge mode can beselected. The voltage regulation mode is selected whenthe battery includes a fixed load. Trickle charge prevents adischarge of the battery over a long period of time.For SLA and LiIon batteries the charge current is disabledduring standby. The fast charge mode is entered againwhen the battery voltage reaches 1.5 V (SLA) or 3 V(LiIon).

Charging principles

CHARGING NiCd/NiMH BATTERIES

Fast charging of the battery begins when the power supplyvoltage is applied and at battery insertion.

During fast charge of NiCd and NiMH batteries, the batterytemperature and voltage are monitored. Outside theinitialized temperature and voltage window, the systemswitches over to the top-off charge current.

The TEA1102 supports detection of fully charged NiCdand NiMH batteries by either of the following criteria:

• ∆T/∆t

• Voltage peak detection.

If the system is programmed with ∆T/∆t and Vpeak or, ∆T/∆tor Vpeak as the main fast charge termination, itautomatically switches to voltage peak detection if thebattery pack is not provided with a temperature sensinginput (NTC). In this way both packages, with and withouttemperature sensor, can be used randomly independent ofthe applied full detection method. Besides ∆T/∆t and/or

voltage peak detection, fast charging is also protected bytemperature cut-off and time-out.

To avoid false fast charge termination by peak voltagedetection or ∆T/∆t, full detection is disabled during a shorthold-off period at the start of a fast charge session. Afterfast charge termination, the battery is extra charged by atop-off period. During this period of approximately onehour, the charge current is lowered thus allowing thebattery to be charged to nearly 100% before the systemswitches over to standby.

After the battery has been charged to nearly 100% by thetop-off period, discharge of the battery (caused by a loador by the self-discharge) can be avoided by voltageregulation or by trickle charge.

If batteries are charged in combination with a load, theTEA1102 can be programmed to apply voltage regulationduring the standby mode. In this way, discharge of thebattery caused by self-discharge or by an eventual load isavoided. The regulating voltage is adjustable to thevoltage characteristic of the battery. For battery safety thecharge current is limited and the temperature is monitoredduring voltage regulation. If a trickle charge is applied, theself-discharge of the battery will be compensated by apulsating charge current.

To avoid the so called ‘memory effect’ in NiCd batteries, arefresh can be manually activated.The discharge current isregulated by the IC in combination with an external powertransistor. After discharging the battery to 1 V per cell, thesystem automatically switches over to fast charge.

CHARGING LiION/SLA BATTERIES

Charging these types of batteries differs considerably fromcharging NiCd and NiMH batteries. The batteries will becharged with a charge current of 0.15 CA if their cellvoltage is below the minimum voltage of 0.9 V for Lilon or0.45 V for SLA. With batteries in good condition the batteryvoltage will rise above 0.9 V in a short period of time.When the batteries are short-circuited the voltage will notrise above 0.9 V within one hour and the system willchange over to cut-off, which means that the output driversAO and PWM are fixed to zero and that battery charge canonly be started again after a power-on reset. If the batteryvoltage of a good condition battery is above the minimumlevel of 0.9 V the battery will be charged with theprogrammed fast charge current.

If Lilon or SLA batteries are used, ‘full’ is detected whenthe battery voltage reaches 4.1 and 2.45 V respectively.At this point the TEA1102 switches from current regulationto voltage regulation (fill-up mode).

1997 Oct 09 7



TEA1102; TEA1102T

After the ‘fill-up’ period the charge current is not regulated,which means that the output drivers AO and PWM arefixed to zero. When the battery voltage becomes less than3 V for Lilon and 1.5 V for SLA, the IC enters the fastcharge mode again.

FUNCTIONAL DESCRIPTION

Control logic

The main function of the control logic is to support thecommunication between several blocks. It also controlsthe charge method, initialization and battery full detection.The block diagram of the TEA1102 is illustrated in Fig.1.

Conditioning charge method and initializations

At system switch-on, or at battery insertion, the controllogic sets the initialization mode in the timer block. Afterthe initialization time the timer program pins can be usedto indicate the charging state using several LEDs.The charge method is defined at the same time by thefollowing methods:

• If the FCT pin is 0 or 1.25 V, indicating that SLA or LiIonbatteries have to be charged, the battery will be chargedby limit current and limit voltage regulation. Withoutidentification (FCT pin floating), the system will chargethe battery according to the charge characteristic ofNiCd and NiMH batteries.

• The standby charge method (NiCd and NiMH), tricklecharge or voltage regulation, is defined by the input pinVstb. By biasing this voltage with a set voltage, the outputvoltage will be regulated to the Vstb set voltage. If this pinis connected to VS, or no NTC is connected the systemapplies trickle charge.

If pin RFSH is connected to ground by depressing theswitch, the TEA1102 discharges the battery via anexternal transistor connected to pin RFSH. The dischargecurrent is regulated with respect to the external (charge)sense resistor (Rsense). End-of-discharge is reached whenthe battery is discharged to 1 V per cell. Refreshing thebattery can only be activated during charging of NiCd andNiMH batteries. When charging LiIon and SLA batteries,discharge before charge is disabled.

The inhibit mode has the main priority. This mode isactivated when the Vstb input pin is connected to ground.Inhibit can be activated at any charge/discharge state,whereby the output control signals will be zero, all LEDswill be disabled and the charger timings will be set on hold.Table 1 gives an operational summary.

Table 1 Functionality of program pins

Notes

1. Where X = don’t care.

2. Not low means floating or high.

3. The NTC voltage has been to be less than 3.3 V, which indicates the presence of an NTC.

4. The NTC voltage is outside the window for NTC detection.

5. Vstb has to be floating or set to a battery regulating voltage in accordance with the specification.

FUNCTION FCT NTC RFSH Vstb

Inhibit X(1) X(1) X(1) low

LiIon and SLA detection low X(1) X(1) X(1)

Refresh (NiCd and NiMH) not low(2) X(1) low not low

∆T/∆t detection floating note 3 not low not low

∆T/∆t and voltage peak detection high note 3 not low not low

Voltage peak detection not low note 4 not low not low

Trickle charge at standby not low X(1) not low high

not low note 4 not low not low

Voltage regulation at standby not low note 3 not low floating(5)

1997 Oct 09 8



TEA1102; TEA1102T

Supply block

The supply block delivers the following outputs:

• A power-on reset pulse to reset all digital circuitry atbattery insertion or supply switch-on. After a generalreset the system will start fast charging the battery.

• A 4.25 V stabilized voltage source (VS) is externallyavailable. This source can be used to set the thermistorbiasing, to initialize the programs, to supply the externalcircuitry for battery voltage based charge indication andto supply other external circuitry.

• A 4.25 V bias voltage (Vsl) is available for use for moreindication LEDs. This output pin will be zero during theinitialization period at start-up, thus avoiding anyinterference of the extra LEDs when initializing.

Charge control

The charge current is sensed via a low-ohmic resistor(Rsense), see Fig.4. A positive voltage is created acrossresistor Rb by means of a current source Iref which is set byRref in the event of fast charge and by an internal biascurrent source in the event of top-off and trickle charge(IIB), see Fig.1. The positive node of Rb will be regulated tozero via error amplifier A1, which means that the voltageacross Rb and Rsense will be the same. The fast chargecurrent is defined by the following equation:

(1)

The output of amplifier A1 is available at the loop stabilitypin LS, consequently the time constant of the current loopcan be set. When Vpeak (NiCD and NiMH) is applied, thecurrent sensing for the battery voltage will be reduced,implying that the charge current will be regulated to zeroduring:

(2)

Actually battery voltage sensing takes place in the lastoscillator cycle of this period.

To avoid modulation on the output voltage, the top-offcharge current is DC regulated, defined by the followingequation:

(3)

where:

(4)

The top-off charge current will be approximately 0.15 CA,which maximizes the charge in the battery under safe andslow charging conditions. The top-off charge period will beapproximately one hour, so the battery will be extra

Ifast Rsense× Rb Iref×=

tsense 210

POD× tosc×=

Itop off– Rsense× Rb 3 106–××=

ttop off– 227

TOD× tosc×=

charged with approximately 0.15 Q. In this way the batteryis fully charged before the system switches over tostandby.

When pin 1 (Vstb) is connected to VS, or no NTC isconnected the system compensates the (self) discharge ofthe battery by trickle charge. The trickle charge current willbe pulsating, defined by the following equation:

(5)

During the non current periods at trickle charge the chargecurrent is regulated to zero, so that the current for a loadconnected in series across the battery with the senseresistor will be supplied by the power supply and not by thebattery.

If at pin 1 (Vstb) a reference voltage is set in accordancewith the specification, and no NTC is connected the chargemode will switch over from current to voltage regulationafter top-off. The reference regulating voltage can beadjusted to the battery characteristic by external resistorsconnected to pin Vstb.

This reference voltage has to be selected in such a waythat it equals the rest voltage of the battery. By usingvoltage regulation, the battery will not be discharged at aload occurrence. If the Vstb input pin is floating, theTEA1102 will apply voltage regulation at 1.325 V duringthe standby mode (NiCd and NiMH). The current duringvoltage regulation is limited to 0.5 CA. If the battery chargecurrent is maximized to 0.5 CA for more than 2 hourscharging will be stopped. Moreover, if the temperatureexceeds Tmax, charging will be stopped completely.As voltage regulation is referred to one cell, the voltage onthe Vbat pin must be the battery voltage divided by thenumber of cells (NiCd and NiMH).

For LiIon or SLA batteries, the battery is extra chargedafter full detection by constant voltage regulation during acertain fill-up period. LiIon and SLA batteries have toidentify themselves by an extra pin on the battery pack toground, which is connected via a resistor to pin 11 (FCT).As the battery voltage sense (Vbat) has to be normalized toa one cell voltage of NiCd and NiMH packages, the Vbatinput pin will be regulated to 1.367 and 1.633 V duringfill-up for LiIon and SLA respectively. In this way thissystem can accept a mixture of one LiIon, two SLA andthree NiCd or NiMH packages.

After fill-up, charging of LiIon or SLA batteries is disabled.The battery charge is then fixed to zero, ensuringmaximum life-cycle of the battery.

Because of a fixed zero charge current, the battery will bedischarged if a load is applied.

Itrickle Rsense× Rb1516------× 10

6–×=

1997 Oct 09 9



TEA1102; TEA1102T

To ensure an eventual load during all charging states, thefast charge mode will be entered again if the batteryvoltage drops below 15 V for SLA or 3 V for Lilon.

When charging, the standby mode (LiIon and SLA) canonly be entered after a certain period of time depending ontime-out. The same applies for charging NiCd or NiMHbatteries. To support full test of the TEA1102 atapplication, the standby mode is also entered whenVbat < Vbat(l) at fill-up or top-off respectively.

Timer

The timing of the circuit is controlled by the oscillatorfrequency.

The timer block defines the maximum charging time by‘time-out’. At a fixed oscillator frequency, the time-out timecan be adapted by the Programmable Time-out Divider(PTD) using the following equation.

(6)ttime out– 226

POD× PTD× tosc×=

The time-out timer is put on hold by low voltage,temperature protection and during the inhibit mode.The Programmable Oscillator Divider (POD) enables theoscillator frequency to be increased without affectingthe sampling time and time-out. Raising the oscillatorfrequency will reduce the size of the inductive componentsthat are used.

At fast charging, after battery insertion, after refresh orsupply interruption, the full detector will be disabled for aperiod of time to allow a proper start with flat or inversepolarized batteries. This hold-off period is disabled at fastcharging by raising pin Vstb to above ±5 V (once).So for test options it is possible to slip the hold-off period.The hold-off time is defined by the following equation:

(7)

Table 2 gives an overview of the settings of timing anddischarge/charge currents.

thold off– 25–

ttime out–×=

Table 2 Timing and current formulae

SYMBOL DESCRIPTION FORMULAE

tosc timing see Fig.3

Tsampling (∆T/∆t) NTC voltage sampling frequency 217 × POD × PSD × tosc

Tsampling (Vpeak) battery voltage sampling frequency 216 × POD × tosc

ttop-off 227 × POD × tosc

ttime-out 226 × POD × PTD × tosc

thold-off 2−5 × ttime-out

tLED inhibit or protection 214 × POD × tosc

tsense 210 × POD × tosc

tswitch 221 × POD × PTD × tosc

Ifast charge/discharge currents

Itop-off

Itrickle

Iload-max

IRFSH

Rb

Rsense-----------------

Vref

Rref----------×

Rb

Rsense----------------- 3× 10

6–×

Rb

Rsense-----------------

1516------× 10

6–×

Rb

Rsense----------------- 40× 10

6–×

100 mVRsense--------------------

1997 Oct 09 10



TEA1102; TEA1102T


200

fosc(kHz)

00 30 60 90 120 150

ttime-out (min)180 10

12.5(R23 min)

PTD programming

125(R23 max)

30 50 70 90R23 (kΩ)

C4(pF)

110

68

100

150

220

3905608201500

130

MGD280

40

80

120

160

:1(GND)

:2(n.c.)

:4(+VS)

preferedoscillator

range(POD = GND)

preferedoscillator

range(POD = n.c.)

preferedoscillator

range(POD = +VS)

Fig.3 ttime-out as a function of R23 and PTD with C4 as parameter.

LED indication

With few external components, indication LEDs can beconnected to the program pins and the LED pin of theTEA1102. These program pins change their function froman input to an output pin after a short initialization time atsystem switch-on or battery insertion. Output pin Vslenables the external LEDs to be driven and avoidsinteraction with the programming of the dividers during theinitialization period.

The applied LEDs indicate:

• Protection

• Refresh

• Fast charge

• 100%

• No-battery.

The LED output pin can also indicate the charging state byone single LED. The indication LED can be connecteddirectly to the LED output. This single LED indicates:

• Fast charge (LED on)

• 100% or refresh (LED off)

• Protection or inhibit (LED floating).

The refresh can be indicated by an extra LED connectedto pin 4 (PSD). A buzzer can also be driven from theTEA1102 to indicate battery insertion end of refresh or fullbattery.

AD/DA converter

When battery full is determined by peak voltage detection,the Vbat voltage is sampled at a rate given by the followingequation:

(8)

The analog value of a Vbat sample is then digitized andstored in a register. On the following sample, the digitizedvalue is converted back to the analog value of Vbat andcompared with the ‘new’ Vbat sample.

tsampling Vpeak( ) 216

POD× tosc×=

1997 Oct 09 11



TEA1102; TEA1102T

At an increase of the battery voltage the 14-bitanalog-to-digital convertor (ADC) is refreshed with thisnew value. Therefore, the digitized value alwaysrepresents the maximum battery voltage. A decreasedVbat voltage is not stored, but is compared to the storedvalue.

Full is detected when the voltage decrease of Vbat is 1⁄4%of the stored peak battery value. To avoid interference dueto the resistance of the battery contacts during batteryvoltage sensing, the charge current is regulated to zeroduring t = 210 × POD × tosc, via the regulation pins AO andPWM. At the last period, the Vbat voltage is sensed andstored in a sample-and-hold circuit. This approachensures very accurate detection of the battery fullcondition (minus 1⁄4%).

When battery full is determined by ∆T/∆t, the voltage onthe NTC pin is used as the input voltage to the AD/DAconvertor. The sampling time at ∆T/∆t sensing is given bythe following equation:

(9)

After this initialized sample time the new temperaturevoltage is compared to the preceding AD/DA voltage andthe AD/DA is refreshed with this new value. A certainincrease of the temperature is detected as full battery,depending on the initialization settings. The decision of fulldetection by ∆T/∆t or Vpeak is digitally filtered thus avoidingfalse battery full detection.

tsampling∆T∆t-------

217

POD× PSD× tosc×=

Output drivers

The charge current regulation signal is available at twooutput pins, AO and PWM.

ANALOG OUTPUT

The analog control voltage output at pin 18 (AO) can beused to drive an opto-coupler in mains separatedapplications when an external resistor is connectedbetween AO and the opto-coupler. The maximum currentthrough the opto-coupler diode is 2 mA. The voltage gainof amplifier A2 is typical 11 dB (times 3.5). The DC voltagetransfer is given by the following equation:

Vao = 3.5 × (VLS − 1.35).

The AO output can be used for:

• Linear (DC) applications

• Not mains isolated SMPS with a separate controller

• Mains isolated SMPS, controlled by an opto-coupler.

PULSE WIDTH MODULATOR (PWM)

The LS voltage is compared internally with the oscillatorvoltage to deliver a pulse width modulated output at PWM(pin 15) to drive an output switching device in a SMPSconverter application via a driver stage. The PWM outputis latched to prevent multi-pulsing. The maximum dutyfactor is internally fixed to 79% (typ.). The PWM output canbe used for synchronization and duty factor control of aprimary SMPS via a pulse transformer.

1997 Oct 09 12



TEA1102; TEA1102T

LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134); note 1.

Note

1. All voltages are measured with respect to ground; positive currents flow into the IC; all pins not mentioned in thevoltage list are not allowed to be voltage driven. The voltage ratings are valid provided that other ratings are notviolated; current ratings are valid provided that the power rating is not violated.

QUALITY SPECIFICATION

General quality specification for integrated circuits: SNW-FQ-611E.


Voltages

VP positive supply voltage −0.5 − 11.5 V

VoLED output voltage at pin 5 −0.5 − 15 V

Vn voltage at pins PWM, LS and NTC −0.5 − +VS V

VIB voltage at pin 2 −0.5 − 1.0 V

Currents

IVS current at pin 16 −3 − +0.01 mA

IVsl current at pin 13 −1 − +0.3 mA

IoLED output current at pin 5 − − 12 mA

IAO output current at pin 18 −10 − +0.05 mA

IoPWM output current at pin 15 −15 − +14 mA

IRref current at pin 20 −1 − +0.01 mA

IP positive supply current Tj < 100 °C − − 30 mA

IP(stb) supply standby current VP = 4 V − 35 45 µA

Dissipation

Ptot total power dissipation Tamb = +85 °CSOT146-1 − − 1.2 W

SOT163-1 − − 0.6 W

Temperatures

Tamb operating ambient temperature −20 − +85 °CTj junction temperature − − +150 °CTstg storage temperature −55 − +150 °C

1997 Oct 09 13



TEA1102; TEA1102T

CHARACTERISTICSVP = 10 V; Tamb = 25 °C; Rref = 62 kΩ; unless otherwise specified.


Supplies; pins V P, VS, Rref and Vsl

VP supply voltage 5.5 − 11.5 V

IP supply current outputs off; VP = 11.5 V − 4 6 mA

Istb standby current VP = 4 V − 35 45 µA

Vclamp clamping voltage (pin 12) Iclamp = 30 mA 11.5 − 12.8 V

Vstart start voltage 6.1 6.4 6.7 V

VLSP low supply protection level 5.1 5.3 5.5 V

VS source voltage (stabilized) IS = 2 mA 4.14 4.25 4.36 V

VSL LED source voltage ILED = 50 µA 4.05 4.25 4.45 V

Vref reference voltage Iref = 20 µA; VP = 10 V 1.21 1.25 1.29 V

TCVref temperature coefficient of thereference voltage

Tamb = 0 to 45 °C;Iref = 20 µA; Vref = 1.25 V

0 ±60 ±120 ppm/K

∆Vref/∆VP power supply rejection ratio ofthe reference voltage

f = 100 Hz; VP = 8 V;∆VP = 2 V (p-p)

−46 − − dB

∆Vref load rejection of sourcevoltage

∆IS = 20 mA; VP = 10 V − − 5 mV

IRref current range of referenceresistor

10 − 100 µA

Charge current regulation; pins IB and R ref

IIB/Iref fast charge ratio VIB = 0

Iref = 10 µA 0.93 1.03 1.13

Iref = 100 µA 0.93 1.0 1.07

VthIB threshold voltage at pin IB Tamb = 25 °C −2 − +2 mV

Tamb = 0 to 45 °C −3 − +3 mV

IIB charge current top-off mode; VIB = 0 2.6 3.2 3.8 µA

IIB(max) maximum charge current voltage regulation fullNiCd/NiMH battery; VIB = 0

9 10.5 12 µA

IIB(Lmax) maximum load current open battery; VIB = 0 34 42 50 µA

IIB(LI) input leakage current currentless mode − − 170 nA

Refresh; pin RFSH

VRsense sense resistor voltage Irefresh = VIB/ Rsense; refreshmode; Irefresh = 18 mA

75 100 125 mV

VRFSH refresh voltage forprogramming start of refresh

NiCd/NiMH 0 − 250 mV

Vbat voltage at pin Vbat fordetecting end of refresh

NiCd/NiMH 0.96 1.0 1.04 V

Isource(max) maximum source current VIB = 75 mV; VP = 10 V;VRFSH = 2.7 V; Tamb = 25 °C

1.4 2 2.6 mA

1997 Oct 09 14



TEA1102; TEA1102T

VRFSH(max) maximum refresh voltage IRFSH = 1 mA 2.7 − − V

VRFSH(off) voltage at pin RFSH whenrefresh is off

700 770 840 mV

Temperature related inputs; pins NTC and MTV

VNTCh input voltage at pin NTC fordetecting high temperature

pin MTV open-circuit 0.9 1 1.1 V

MTV setting 0.95MTV MTV 1.05MTV V

VNTCh(hy) hysteresis of VNTCh − 80 − mV

VNTCl input voltage at pin NTC,detecting low temperature

2.7 2.8 2.9 V

VNTCl(hy) hysteresis of VNTCl − 75 − mV

VNTC(co) input voltage at pin NTC fordetecting temperature cut-off

0.7MTV 0.75MTV 0.8MTV V

VNTC(bat) maximum input voltage at pinNTC for detecting battery withNTC

3.22 3.3 3.38 V

INTC input current at pin NTC VNTC = 2 V −5 − +5 µA

VMTV voltage level at pin MTV default (open-circuit) 0.95 1 1.05 V

0.5 − 2.5 V

∆VNTC/VNTC ∆T/∆t detection level VNTC = 2 V; Tj = 0 to 50 °C − −0.25 − %

Voltage regulation

Vreg regulation voltage LiIon; Iref = 20 µA 1.34 1.37 1.40 V

SLA; Iref = 20 µA 1.59 1.63 1.67 V

NiCd and NiMH;pin Vstb open-circuit

1.30 1.325 1.35 V

NiCd and NiMH; Vstb = 1.5 V 0.99Vstb Vstb 1.01Vstb V

open battery 1.86 1.9 1.94 V

TCVreg temperature coefficient ofregulation voltage

Vreg = 1.37 V;Tamb = 0 to 45 °C

0 ±60 ±120 ppm/K

gm transconductance ofamplifier A3

Vbat = 1.9 V;no battery mode

− 2.0 − mA/V

Program pin V stb

Vstb open voltage at pin Vstb 1.30 1.325 1.35 V

Vstb(im) voltage at pin Vstb forprogramming inhibit mode

0 − 0.8 V

Vstb(st) voltage at pin Vstb forprogramming voltageregulation at standby

NiCd and NiMH 1.0 − 2.2 V

Vstb(tc) voltage at pin Vstb forprogramming trickle charge atstandby

NiCd and NiMH 2.6 − VS V


1997 Oct 09 15



TEA1102; TEA1102T

Program pins; PSD, POD and PTD

V4,6,7 voltage level at pins PSD,POD or PTD

default (open-circuit) 1.9 2.1 2.3 V

V4,6,7(1) voltage level at pins PSD,POD or PTD for programmingthe divider = 1

0 − 1.2 V


1.6 − 2.5 V


3.1 − VS V

IPODsink protection current formulti-LED indication

VPOD = 1.5 V 8 10 12 mA

IPTDsink full battery current formulti-LED indication

VPTD = 1.5 V 8 10 12 mA

IPSDsink refresh current for multi-LEDindication

VPSD = 1.5 V 8 10 12 mA

ILI input leakage current VPOD = 4.25 V;VPTD = 4.25 V; VPSD = 4.25 V

0 − 50 µA

Program pin FCT

VFCT(SLA) voltage level for detecting anSLA battery

0 − 0.7 V

VFCT(Lilon) voltage level for detecting aLiIon battery

0.9 − 1.6 V

VFCT(or) voltage level for programming∆T/∆t or Vpeak as fast chargetermination

NiCd and NiMH 2.0 − 3.3 V

VFCT(and) voltage level for programming∆T/∆t and Vpeak as fastcharge termination

NiCd and NiMH 3.7 − VS V

VFCT voltage level at pin FCT default (open-circuit) 2.3 2.6 2.9 V

Program pin LED

VLED(m) output voltage level forprogramming multi-LEDindication

0 − 2.5 V

VLED(s) output voltage level forprogramming single LEDindication

3.1 − VP V

Isink(max) maximum sink current VLED = 1.5 V 8 10 12 mA

ILI(LED) input leakage current VLED = 10 V 0 − 70 µA

VLED = 0.6 V 0 − 5 µA

Vo(max) maximum output voltage − − 15 V


1997 Oct 09 16



TEA1102; TEA1102T

Output drivers; AO, LS and PWM

IAO(source) analog output source current VAO = 3 V (p-p); VLS = 2.8 V −9 − 0 mA

IAO(sink) analog output sink current VAO = 3 V (p-p); VLS = 1.2 V 50 − − µA

gm1 transconductance ofamplifier A1

VIB = 50 mV − 250 − µA/V

Gv1,2 voltage gain of amplifiersA1 and A2

VAO = 3 V (p-p) − 72 − dB

Gv2 voltage gain of amplifier A2 VAO = 2 V (p-p) − 11 − dB

ILS(source) maximum source current(pin LS)

VLS = 2.25 V −25 −21 −16 µA

ILS(sink) maximum sink current(pin LS)

VLS = 2.25 V 16 21 25 µA

IOH(PWM) HIGH level output current VPWM = 3 V −19 −15 −11 mA

IOL(PWM) LOW level output current VPWM = 0.7 V 10 14 18 mA

δPWM maximum duty factor − 79 − %

Battery monitor; V bat

IVbat battery monitor input current Vbat = 1.85 V − 1 − nA

Vbat voltage range of Vpeakdetection

0.3 − 2 V

∆Vbat/Vbat Vpeak detection level withrespect to top level

Vbat = 1.85 V; Tj = 0 to 50 °C − −0.25 − %

∆Vbat voltage resolution for Vpeak − 0.6 − mV

Protections; V bat

Vbat(l) maximum voltage at pin Vbatfor detecting low batteryvoltage

0.25 0.30 0.35 V

Oscillator; pin OSC

Vosc(H) HIGH level oscillatorswitching voltage

− 2.5 − V

Vosc(L) LOW level oscillator switchingvoltage

− 1.5 − V

fosc(min) minimum oscillator frequency Rref = 125 kΩ; Cosc = 400 pF 20.9 23 25.1 kHz

fosc(max) maximum oscillator frequency Rref = 12.5 kΩ; Cosc = 400 pF 158 174 190 kHz


1997 Oct 09 17



TEA1102; TEA1102T

APPLICATION INFORMATION


MB

H06

8

VP

1213

VS

16

NT

C8

C3

100

nF

4.25

V

NT

C10

kΩ

(25

o C)

R19

75 k

Ω

MT

V9

FC

T11

Vst

b1

Vba

t19

Rre

f20

OS

C14

GN

D3

R16

R15

270

Ω

R24

80 k

Ω(0

.1%

)

R17

R20

∆T/∆

tan

dV

peak

∆T/∆

tor

Vpe

ak

Lilo

nS

LA

R21

P2

R22

P1

Tm

axad

just

.

Vre

gad

just

.

8.2

kΩ 130

kΩR

18

24 k

Ω47

kΩ

47 k

Ω

16 k

Ω15

kΩ

12 k

Ω

Rse

nse

(1A

ref

resh

)

R14

0.

1 Ω

(1)

NiC

d 9

NiC

dN

iMH

3/6/

9 ce

ll

SLA

2/4/

6 ce

ll

Lilo

n1/

2/3

cell

NiM

H 9

SLA

6Li

lon

3

NiC

d 6

NiM

H 6

SLA

4Li

lon

2

NiC

d 3

NiM

H 3

(3)

SLA

2Li

lon

1

R25

40 k

Ω(0

.1%

)

R23

62 k

Ω(1

A fa

stch

arge

)C

422

0pF

C5

470

µF

R26

8 kΩ

(0.1

%)

R28

10 k

Ω(0

.1%

)R

278

kΩ(0

.1%

)

Vsl

5LE

D

:4 :16

PO

DV

S

GN

Dpr

otec

tion

D5fa

st

D4

D8

33 k

Ω

R6

33 k

Ω

R7

:4 :17

PT

DV

S

GN

D10

0%

D6

D2

D3

BA

W62

33 k

Ω

R8

33 k

Ω

R9

:4 :14

PS

D

15P

WM

SM

PS

mod

e

linea

r m

ode

18A

O

17LS

10R

FS

H

2IB

VS

GN

Dre

fres

h

D6

33 k

Ω

R10

33 k

Ω

R11

sing

lem

ulti

LED

R5

750 Ω

R2

62 Ω

R1 1 kΩ

R3

1.5

kΩ

no-

batte

ry

TR

3B

C33

7

TR

2B

C33

7

C1

100

µF

TR

1B

D23

1

D1

BY

D74

D

VI (

DC

)>13

V

R4

3.9

kΩ

L1(S

MP

S o

nly)

VI (

DC

)7

to 1

8 V

400

µHB

YV

28(o

nly

for

mor

e th

an3

cells

R13

(2)

5.1

kΩ(0

.15A

top

off)

C2

1.5

nF

R12

0 Ω (R

b)

TE

A11

02

refr

esh

TR

4T

IP11

0 6 kΩ

LOA

D

only

for

Fig

.4 B

asic

test

boa

rd d

iagr

am.

(1)

or

if n

ot a

pplic

able

.

(2)

(3)

R14

100

mV

I refr

esh

--------

--------

----=

R14

100

mV

I fas

tch

ear

g–

--------

--------

--------

-----

=

R13

R14

I top

off

–× 3

µA

--------

--------

--------

--------

----=

R23

1.25

R13

×R

14I fa

stch

ear

g–

×----

--------

--------

--------

--------

--------

---=

1997 Oct 09 18



TEA1102; TEA1102T

Fig.5 Linear application diagram.


MBH069

13 12VP

R10200 kΩ(1%)

R9100 kΩ(0.1%)

Vsl

16VS

8NTC

9MTV

11FCT

1Vstb

19Vbat

20Rref

14OSC

3GND

5LED

(Rsupply = 270 Ω for more than 3 NiCD cells)

(D2 for more than 3 NiCD cells)

D1

POD

PTD

6

7

TEA1102

VS

GND

VS

GND

PSD4

PWM15

AO18

RFSH10

LS17

IB2

VS

GND

:4

:1

:4

:1

:4

:1

R45.1 kΩ(75 mA top off)

(Rb)

TR2BC337

R3180 Ω

C2 1.5 nF

R5 0.22 Ω

Rsense

R11 kΩ

R21.5kΩ

R610 kΩ

TR1 BD231VI (DC)

7 to 11.5 V

C1100 µF

C5470 µF

C3

100 nF

4.25 V

SLA = 0 ΩLilion = 4.3 kΩ

NiCd/NiMH = ∞

R7

C4220 pF(fosc =

75 kHz)

R862 kΩ(0.5 Afastcharge)

− battery

+ battery

NiCdNiMH3 cells

SLA2 cells

Lilon1 cell

1997 Oct 09 19



TEA1102; TEA1102T

Fig.6 Component side of printed-circuit board (test board).


MBH073

TEA1102 TEST BOARD, V2 JB D&A NIJMEGEN

R28

R6

Vsense

D1

R14D3D2

D6

D5

D4

D7

R19

R2

C3

C7

R26

1L 2L 3L

R27

R25

P2Vstb

R24

C6

C4

C2

R16

R17R20R21R22

R29 R12

R10R4R3 R15 R23

R30

R13

GND

GN

D

Ib

Vsl

R11

R7

R8

R9R18

R5

MTV

FCT

SLALi-IondT/dt or VdT/dt and V

TR2

numberof

cells

LIN

PW

M

PWM

NTC

NTCP1

refresh

fast-charge

protection

100%

no-battery

−Vin −BAT

+Vin

+Vs

+BAT

1

PT

D

L1

D8

TR1

TR4

TR3

R1C1

C5refresh

D9D10

LIN

:4PS

D:1

:4PO

D:1

S-LE

D-M

Vbat

1997 Oct 09 20



TEA1102; TEA1102T

Fig.7 Track side of printed-circuit board (test board).


MBH072

86.35

81.28

Dimensions in mm.

1997 Oct 09 21



TEA1102; TEA1102T

Fig.8 Component side of printed-circuit board (linear application) scale 1 : 1.


MBH071

TEA1102 LINEAR JB D&A CIC NIJM

+Vin +battery

−Vin −battery

TR1

R1 R8

R3

R2

R4

R5

R6

C3C4

C5

C2

R7

R9

R10

D1PSD

PODPTD

:1 :4

C1

1

TR2

Fig.9 Track side of printed-circuit board (linear application) scale 1 : 1.


MBH070

TE

A11

02 L

INE

AR

JB

D&

A C

IC N

IJM

1997 Oct 09 22



TEA1102; TEA1102T

PACKAGE OUTLINES

UNIT Amax.

1 2 b1 c D E e MHL

REFERENCESOUTLINEVERSION

EUROPEANPROJECTION ISSUE DATE

IEC JEDEC EIAJ

mm

inches

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

SOT146-192-11-1795-05-24

A min.

A max. b Z

max.wMEe1

1.731.30

0.530.38

0.360.23

26.9226.54

6.406.22

3.603.05 0.2542.54 7.62

8.257.80

10.08.3 2.04.2 0.51 3.2

0.0680.051

0.0210.015

0.0140.009

1.0601.045

0.250.24

0.140.12 0.010.10 0.30

0.320.31

0.390.33 0.0780.17 0.020 0.13

SC603

MH

c

(e )1

ME

A

L

seat

ing

plan

e

A1

w Mb1

e

D

A2

Z

20

1

11

10

b

E

pin 1 index

0 5 10 mm

scale

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

(1)(1) (1)

DIP20: plastic dual in-line package; 20 leads (300 mil) SOT146-1

1997 Oct 09 23



TEA1102; TEA1102T

UNITA

max. A1 A2 A3 bp c D (1) E (1) (1)e HE L Lp Q Zywv θ

REFERENCESOUTLINEVERSION

EUROPEANPROJECTION ISSUE DATE

IEC JEDEC EIAJ

mm

inches

2.65 0.300.10

2.452.25

0.490.36

0.320.23

13.012.6

7.67.4 1.27

10.6510.00

1.11.0

0.90.4 8

0

o

o

0.25 0.1

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

1.10.4

SOT163-1

10

20

w Mbp

detail X

Z

e

11

1

D

y

0.25

075E04 MS-013AC

pin 1 index

0.10 0.0120.004

0.0960.089

0.0190.014

0.0130.009

0.510.49

0.300.29 0.050

1.4

0.0550.4190.394

0.0430.039

0.0350.0160.01

0.25

0.01 0.0040.0430.0160.01

0 5 10 mm

scale

X

θ

AA1

A2

HE

Lp

Q

E

c

L

v M A

(A )3

A

SO20: plastic small outline package; 20 leads; body width 7.5 mm SOT163-1

95-01-2497-05-22

1997 Oct 09 24



TEA1102; TEA1102T

SOLDERING

Introduction

There is no soldering method that is ideal for all ICpackages. Wave soldering is often preferred whenthrough-hole and surface mounted components are mixedon one printed-circuit board. However, wave soldering isnot always suitable for surface mounted ICs, or forprinted-circuits with high population densities. In thesesituations reflow soldering is often used.

This text gives a very brief insight to a complex technology.A more in-depth account of soldering ICs can be found inour “IC Package Databook” (order code 9398 652 90011).

DIP

SOLDERING BY DIPPING OR BY WAVE

The maximum permissible temperature of the solder is260 °C; solder at this temperature must not be in contactwith the joint for more than 5 seconds. The total contacttime of successive solder waves must not exceed5 seconds.

The device may be mounted up to the seating plane, butthe temperature of the plastic body must not exceed thespecified maximum storage temperature (Tstg max). If theprinted-circuit board has been pre-heated, forced coolingmay be necessary immediately after soldering to keep thetemperature within the permissible limit.

REPAIRING SOLDERED JOINTS

Apply a low voltage soldering iron (less than 24 V) to thelead(s) of the package, below the seating plane or notmore than 2 mm above it. If the temperature of thesoldering iron bit is less than 300 °C it may remain incontact for up to 10 seconds. If the bit temperature isbetween 300 and 400 °C, contact may be up to 5 seconds.

SO

REFLOW SOLDERING

Reflow soldering techniques are suitable for all SOpackages.

Reflow soldering requires solder paste (a suspension offine solder particles, flux and binding agent) to be appliedto the printed-circuit board by screen printing, stencilling orpressure-syringe dispensing before package placement.

Several techniques exist for reflowing; for example,thermal conduction by heated belt. Dwell times varybetween 50 and 300 seconds depending on heatingmethod. Typical reflow temperatures range from215 to 250 °C.

Preheating is necessary to dry the paste and evaporatethe binding agent. Preheating duration: 45 minutes at45 °C.

WAVE SOLDERING

Wave soldering techniques can be used for all SOpackages if the following conditions are observed:

• A double-wave (a turbulent wave with high upwardpressure followed by a smooth laminar wave) solderingtechnique should be used.

• The longitudinal axis of the package footprint must beparallel to the solder flow.

• The package footprint must incorporate solder thieves atthe downstream end.

During placement and before soldering, the package mustbe fixed with a droplet of adhesive. The adhesive can beapplied by screen printing, pin transfer or syringedispensing. The package can be soldered after theadhesive is cured.

Maximum permissible solder temperature is 260 °C, andmaximum duration of package immersion in solder is10 seconds, if cooled to less than 150 °C within6 seconds. Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removalof corrosive residues in most applications.

REPAIRING SOLDERED JOINTS

Fix the component by first soldering two diagonally-opposite end leads. Use only a low voltage soldering iron(less than 24 V) applied to the flat part of the lead. Contacttime must be limited to 10 seconds at up to 300 °C. Whenusing a dedicated tool, all other leads can be soldered inone operation within 2 to 5 seconds between270 and 320 °C.

1997 Oct 09 25



TEA1102; TEA1102T

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of theseproducts can reasonably be expected to result in personal injury. Philips customers using or selling these products foruse in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from suchimproper use or sale.

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one ormore of the limiting values may cause permanent damage to the device. These are stress ratings only and operationof the device at these or at any other conditions above those given in the Characteristics sections of the specificationis not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

1997 Oct 09 26



TEA1102; TEA1102T

NOTES

1997 Oct 09 27



TEA1102; TEA1102T

NOTES

Internet: http://www.semiconductors.philips.com

Philips Semiconductors – a worldwide company

© Philips Electronics N.V. 1997 SCA55

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changedwithout notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any licenseunder patent- or other industrial or intellectual property rights.

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Portugal: see Spain

Romania: see Italy

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Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,Tel. +65 350 2538, Fax. +65 251 6500

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Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773

Belgium: see The Netherlands

Brazil: see South America

Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,51 James Bourchier Blvd., 1407 SOFIA,Tel. +359 2 689 211, Fax. +359 2 689 102

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,Tel. +1 800 234 7381

China/Hong Kong: 501 Hong Kong Industrial Technology Centre,72 Tat Chee Avenue, Kowloon Tong, HONG KONG,Tel. +852 2319 7888, Fax. +852 2319 7700

Colombia: see South America

Czech Republic: see Austria

Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,Tel. +45 32 88 2636, Fax. +45 31 57 0044

Finland: Sinikalliontie 3, FIN-02630 ESPOO,Tel. +358 9 615800, Fax. +358 9 61580920

France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex,Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427

Germany: Hammerbrookstraße 69, D-20097 HAMBURG,Tel. +49 40 23 53 60, Fax. +49 40 23 536 300

Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,Tel. +30 1 4894 339/239, Fax. +30 1 4814 240

Hungary: see Austria

India: Philips INDIA Ltd, Band Box Building, 2nd floor,254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,Tel. +91 22 493 8541, Fax. +91 22 493 0966

Indonesia: see Singapore

Ireland: Newstead, Clonskeagh, DUBLIN 14,Tel. +353 1 7640 000, Fax. +353 1 7640 200

Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007

Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557

Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,Tel. +81 3 3740 5130, Fax. +81 3 3740 5077

Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,Tel. +82 2 709 1412, Fax. +82 2 709 1415

Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,Tel. +60 3 750 5214, Fax. +60 3 757 4880

Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,Tel. +9-5 800 234 7381

Middle East: see Italy

Printed in The Netherlands 417027/1200/03/pp28 Date of release: 1997 Oct 09 Document order number: 9397 750 02913

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