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DATA SHEET
Product specificationSupersedes data of 1997 Apr 16
1999 Apr 23
DISCRETE SEMICONDUCTORS
BC516PNP Darlington transistor
book, halfpage
M3D186
str 2 www.gme.cz
Dodavatel: GM electronic, spol. s r.o., Křižíkova 77, 186 00 Praha 8zákaznická linka: 840 50 60 70 | www.gme.cz
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noitacfiiceps tcudorP
615CBrotsisnart notgnilraD PNP
FEATURES
• High current (max. 500 mA)• Low voltage (max. 30 V)• Very high DC current gain (min. 30000).
APPLICATIONS
• Where very high amplification is required.
DESCRIPTION
PNP Darlington transistor in a TO-92; SOT54 plasticpackage. NPN complement: BC517.
PINNING
PIN DESCRIPTION1 emitter2 base3 collector
Fig.1 Simplified outline (TO-92; SOT54)and symbol.
handbook, halfpage
MAM303
2 3
1
TR2TR1
123
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).
Note1. Transistor mounted on an FR4 printed-circuit board.
TINU.XAM.NIMSNOITIDNOCRETEMARAPLOBMYSVCBO collector-base voltage (open emitter) open emitter − −40 VVCES collector-emitter voltage VBE = 0 − −30 VVEBO emitter-base voltage open collector − −10 VIC collector current (DC) − −500 mAICM peak collector current − −800 mAIB base current (DC) − −100 mAPtot total power dissipation Tamb ≤ 25 °C; note 1 − 500 mWTstg storage temperature −65 +150 °CTj junction temperature − 150 °CTamb operating ambient temperature −65 +150 °C
Dodavatel: GM electronic, spol. s r.o., Křižíkova 77, 186 00 Praha 8zákaznická linka: 840 50 60 70 | www.gme.cz
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Product specification
615CBrotsisnart notgnilraD PNP
THERMAL CHARACTERISTICS
Note1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICSTj = 25 °C unless otherwise specified.
TINUEULAVSNOITIDNOCRETEMARAPLOBMYSRth j-a W/K0521etontneibma ot noitcnuj morf ecnatsiser lamreht
TINU.XAM.PYT.NIMSNOITIDNOCRETEMARAPLOBMYSICBO collector cut-off current IE = 0; VCB = −30 V − − −100 nAIEBO emitter cut-off current IC = 0; VEB = −10 V − − −100 nAhFE DC current gain IC = −20 mA; VCE = −2 V; see Fig.2 30000 − −
VCEsat collector-emitter saturation voltage IC = −100 mA; IB = −0.1 mA − − −1 VVBEsat base-emitter saturation voltage IC = −100 mA; IB = −0.1 mA − − −1.5 VVBEon base-emitter on-state voltage IC = −10 mA; VCE = −5 V − − −1.4 VfT transition frequency IC = −30 mA; VCE = −5 V; f = 100 MHz − 220 − MHz
handbook, full pagewidth
0
100000
20000
40000
60000
80000
hFE
MGD836
−1 −10IC (mA)
−102 −103
Fig.2 DC current gain; typical values.
VCE = −2 V.
Dodavatel: GM electronic, spol. s r.o., Křižíkova 77, 186 00 Praha 8zákaznická linka: 840 50 60 70 | www.gme.cz
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Product specification
615CBrotsisnart notgnilraD PNP
PACKAGE OUTLINE
UNIT A
REFERENCESOUTLINEVERSION
EUROPEANPROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 5.25.0
b
0.480.40
c
0.450.40
D
4.84.4
d
1.71.4
E
4.23.6
L
14.512.7
e
2.54
e1
1.27
L1(1)
2.5
b1
0.660.56
DIMENSIONS (mm are the original dimensions)
Note1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
34-CS29-OT45TOS 97-02-28
A L
0 2.5 5 mm
scale
b
c
D
b1 L1
d
E
45TOSsdael 3 ;egakcap )eloh hguorht( dedael dedne-elgnis citsalP
e1e
1
2
3
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Product specification
615CBrotsisnart notgnilraD PNP
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of theseproducts can reasonably be expected to result in personal injury. Philips customers using or selling these products foruse in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from suchimproper use or sale.
Data Sheet StatusObjective specification This data sheet contains target or goal specifications for product development.Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.Product specification This data sheet contains final product specifications.
Limiting valuesLimiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one ormore of the limiting values may cause permanent damage to the device. These are stress ratings only and operationof the device at these or at any other conditions above those given in the Characteristics sections of the specificationis not implied. Exposure to limiting values for extended periods may affect device reliability.
Application informationWhere application information is given, it is advisory and does not form part of the specification.
Dodavatel: GM electronic, spol. s r.o., Křižíkova 77, 186 00 Praha 8zákaznická linka: 840 50 60 70 | www.gme.cz
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Product specification
615CBrotsisnart notgnilraD PNP
NOTES
Dodavatel: GM electronic, spol. s r.o., Křižíkova 77, 186 00 Praha 8zákaznická linka: 840 50 60 70 | www.gme.cz
technický list
str 7www.gme.cz
Product specification
615CBrotsisnart notgnilraD PNP
NOTES
