Data Sheet
MB86R11FMB86R12MB86R13
Rev1.00 | December 4, 2018Socionext Europe GmbH
Graphic Competence Center – GCC
Socionext Europe GmbHGraphic Competence Center - GCCds-MB86R11F/12/13-rev1.00 GCC-0294-Ehttp://www.socionext.com/ Copyright 2018
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Preface
Intention and Target Audience of this DocumentThis document describes and gives you detailed insight to the stated Socionext semiconductor product.The device belongs to the SoCs used for graphics applications.The target audience of this document is engineers developing products which will use the device. It describes thefunction and operation of the device. Please read this document carefully.
TrademarksARM is a registered trademark of ARM Limited in UK, USA and Taiwan. ARM is a trademark of ARM Limited in Japan and Korea. ARM Powered logo is a registered trademark of ARM Limited in Japan, UK, USA, and Taiwan.
ARM Powered logo is a trademark of ARM Limited in Korea. PrimeCell® is owned by ARM Limited.CAN, Controller Area Network, Bosch® are trademarks or registered trademarks of Bosch Corporation in theUnited States and other countries.
I2C, Inter-Integrated CircuitPhilips Semiconductor® are trademarks or registered trademarks of PhilipsSemiconductor® corporation in the United States and/or other countries.SPI, Serial Peripheral Interface, Motorola® are trademarks or registered trademarks of Motorola corporation in theUnited States and/or other countries.
RSDS and PPDS are registered trademarks of National Semiconductor.Truevision is a registered trademark of Truevision, Inc.TGA is a trademark of Truevision, Inc.
System names and product names which appear in this document are the trademarks of the respective companyor organization.
LicensesUnder the conditions of Philips corporation I2C patent, the license is valid where the device is used in an I2Csystem which conforms to the I2C standard specification by Philips Corporation.The purchase of Socionext I2C components conveys a license under the Philips I2C Patent Rights to use thesecomponents in an I2C system, provided that the system conforms to the I2C Standard Specification as defined byPhilips.
Please acquire license of MediaLB from SMSC and request the following document: OS62400 MediaLB DeviceInterface Macro Advanced Product Data Sheet.Please contact your SNEU Sales representative to acquire license for SD Card and request the followingdocument: Hardware Manual - “29. SDIO Host Controller”.
Contact InformationFor more information on Socionext products or sales inquiries please contact our support team and salesassociates through our website www.eu.socionext.com.
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History
Version Date Comment1.00 20.11.2018 First release of combined data sheet.
Table of Contents
1 Introduction ...................................................................................................................................... 1-1
1.1. Key Features ............................................................................................................................. 1-11.2. Block Diagrams ......................................................................................................................... 1-4
1.2.1. MB86R11F Block Diagram ............................................................................................... 1-41.2.2. MB86R12 Block Diagram ................................................................................................. 1-51.2.3. MB86R13 Block Diagram ................................................................................................. 1-6
1.3. Outline of Each Functional Block .............................................................................................. 1-61.4. System Configuration ................................................................................................................ 1-81.5. Function List ............................................................................................................................ 1-101.6. Package .................................................................................................................................. 1-14
1.6.1. MB86R11F Package ....................................................................................................... 1-141.6.2. MB86R12/13 Package .................................................................................................... 1-15
1.7. Device Handling ...................................................................................................................... 1-161.7.1. Latch-Up ......................................................................................................................... 1-161.7.2. Unused Pin ..................................................................................................................... 1-161.7.3. Power Supply Pin ........................................................................................................... 1-161.7.4. Oscillation Circuit ............................................................................................................ 1-161.7.5. Attention PLL Clock's Working ....................................................................................... 1-16
1.8. Pinning .................................................................................................................................... 1-171.8.1. Pin Assignment ............................................................................................................... 1-171.8.2. Functional Pin Assignment ............................................................................................. 1-18
1.8.2.1. MB86R11F Pin Assignment .................................................................................... 1-181.8.2.2. MB86R12/13 Pin Assignment.................................................................................. 1-19
1.8.3. Pin Descriptions .............................................................................................................. 1-19
2. Electric Characteristics .................................................................................................................. 2-12.1. Maximum Ratings ..................................................................................................................... 2-12.2. Recommended Operating Conditions ....................................................................................... 2-42.3. Power ON ................................................................................................................................. 2-6
2.3.1. Recommended Power ON/OFF Sequence ...................................................................... 2-62.3.2. Alternative Power ON/OFF Sequence (not recommended) ............................................. 2-62.3.3. Power ON Timing Chart .................................................................................................... 2-72.3.4. Power On Inrush Current .................................................................................................. 2-8
2.4. DC Characteristics .................................................................................................................... 2-92.4.1. 3.3V Standard CMOS I/O ................................................................................................. 2-9
2.4.1.1. 3.3V Standard CMOS I/O V-I Characteristic (Driving Capability 2mA).................... 2-102.4.1.2. 3.3V Standard CMOS I/O V-I Characteristic (Driving Capability 4mA).................... 2-112.4.1.3. 3.3V Standard CMOS I/O V-I Characteristic (Driving capability 6mA)..................... 2-122.4.1.4. 3.3V Standard CMOS I/O V-I Characteristic (Driving capability 8mA)..................... 2-13
2.4.2. SSTL15 I/O ..................................................................................................................... 2-142.4.3. ADC I/O .......................................................................................................................... 2-182.4.4. SSCG I/O ........................................................................................................................ 2-20
2.4.4.1. PLL Clock Jitter ....................................................................................................... 2-212.4.4.2. Difference permission level of crystal (MB86R11F)................................................. 2-21
2.4.5. I2C Bus Fast Mode I/O ................................................................................................... 2-222.4.5.1. I2C IO V-I Characteristic Chart ................................................................................ 2-23
2.4.6. RSDS I/O ........................................................................................................................ 2-232.4.7. USB I/O ........................................................................................................................... 2-24
2.5. AC Characteristics .................................................................................................................. 2-262.5.1. External Bus Controller Signal Timing ............................................................................ 2-262.5.2. DDR Controller Signal Timing ......................................................................................... 2-302.5.3. Display Controller Unit Signal Timing ............................................................................. 2-38
2.5.3.1. Clock........................................................................................................................ 2-382.5.3.2. Input Signal.............................................................................................................. 2-38
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Table of Contents
2.5.3.3. Output Signal........................................................................................................... 2-392.5.3.4. TCON Active Display Timing DISP0 Interface ........................................................ 2-412.5.3.5. ITU-R BT656 Display Timing DISP1 Interface ....................................................... 2-44
2.5.4. Video Capture Unit Signal Timing ................................................................................... 2-452.5.4.1. Clock........................................................................................................................ 2-452.5.4.2. Input Signal.............................................................................................................. 2-45
2.5.5. I2S Signal Timing ............................................................................................................ 2-472.5.6. UART Signal Timing ....................................................................................................... 2-512.5.7. I2C Bus Timing ............................................................................................................... 2-522.5.8. SFI Signal Timing ........................................................................................................... 2-542.5.9. CAN Signal Timing ......................................................................................................... 2-552.5.10. MediaLB Signal Timing ................................................................................................. 2-56
2.5.10.1. MediaLB AC Spec Type A..................................................................................... 2-562.5.10.1.1. Clock............................................................................................................. 2-562.5.10.1.2. Input Signal................................................................................................... 2-562.5.10.1.3. Output Signal................................................................................................ 2-57
2.5.10.2. MediaLB AC Spec Type B..................................................................................... 2-572.5.10.2.1. Clock............................................................................................................. 2-572.5.10.2.2. Input Signal................................................................................................... 2-582.5.10.2.3. Output Signal................................................................................................ 2-58
2.5.11. USB Signal Timing - MB86R11F .................................................................................. 2-592.5.12. IDE66 Signal Timing ..................................................................................................... 2-61
2.5.12.1. IDE PIO Timing...................................................................................................... 2-612.5.12.2. IDE Ultra DMA Timing ........................................................................................... 2-63
2.5.13. USART Signal Timing .................................................................................................. 2-652.5.14. Ethernet Signal Timing ................................................................................................. 2-67
2.5.14.1. MII Timing.............................................................................................................. 2-672.5.14.2. RMII Timing ........................................................................................................... 2-682.5.14.3. MDIO Timing ......................................................................................................... 2-69
2.5.15. TS Signal Timing .......................................................................................................... 2-702.5.15.1. TS CLK Not Inverted Mode ................................................................................... 2-702.5.15.2. TS CLK Inverted Mode .......................................................................................... 2-712.5.15.3. Host Interface Signal Timing ................................................................................. 2-72
2.5.16. HS_SPI Signal Timing .................................................................................................. 2-73
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1 IntroductionThe MB86R11F, MB86R12 and MB86R13 devices are System-on-chip (SoC) solutions that incorporate an ARMCortex A9 CPU and the Socionext’s Graphic Display Controller (GDC) MB86298 as its core. The MB86R11F/12/13 implements an LSI-architecture that contains peripheral I/O resources, such as in-vehicle LAN, HDD, etc. in asingle chip solution. Many graphics solutions using only a single chip, where previously more complex and costlysolutions using two separate chips, CPU and GDC, were required, are now possible. Table 1.1 summarizes the differences between devices MB86R11F, MB86R12 and MB86R13.
TechnologyCMOS 65nmPower supply voltage: 3.3 ±0.3V (IO), 1.2 ±0.1V (core), 1.5 ±0.1V (DDR3), 1.8 ±0.1V (DDR2)
PackageMB86R11F: PBGA-544MB86R12, MB86R13: TEBGA-544Ambient temperature range: -40 … +85°C
Memory InterfaceMB86R11F: 32-bit DDR3-800 / DDR2-80032-bit/16-bit width mode (half of data pins are not used in 16-bit mode)
MB86R12/13: 32-bit DDR3-800 / DDR3-1066 / DDR2-800/DDR2-66732-bit/16-bit width mode (half of data pins are not used in 16-bit mode)
1.1. Key Features
CPU Core (ARM Cortex-A9) Bus architecture: Multi-layer AXI/AHB/APB bus architectureInterruptsBuilt-in SRAMClock/Reset ControlGeneral Purpose External Bus (32bit/16bit)
Table 1.1. : MB86R11F/12/13 specificationsMB86R11F MB86R12 MB86R13
Package PBGA TEBGA TEBGA
APIX No Yes No
USB2.0 Yes No No
DDRDDR3-800
DDR2-800/667DDR3-1066/800DDR2-800/667
DDR3-1066/800DDR2-800/667
Clock
CPU:400MHzAXI:200MHzAHB:100MHzAPB:50MHz
CPU:533MHzAXI:266MHzAHB:133MHzAPB:66MHz
CPU:533MHzAXI:266MHzAHB:133MHzAPB:66MHz
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Unified 16-bit / 32-bit DDR3/DDR2 memory interfaceGDC - Graphics Display ControllerSDIO/MMC - Memory Controller (CPRM: not supported) x 3 channelsADC - 12-bit Analog/Digital Converter (500 kS/s) x 2 channelsI2C - Inter-Integrated Circuit - I/O voltage: 3.3V x 5 channelsCAN - Controller Area Network (I/O voltage: 3.3V) x 2 channelsMediaLB - Media Local Bus (3-pin) x 1 channelUSART/UART - Universal Synchronous/Asynchronous Receiver Transmitter x 6 channels GPIO - General Purpose Input/Output x 128bitSFI/SPI - Serial Flash Interface x 2 channelsHS-SPI - High-speed Serial Peripheral Interface x 1 channelI2S - Serial Audio Interface x 4 ports (2 channels/port)PWM - Pulse Width Modulator x 12 channelsIrDA - Infrared Data Transfer (Ver.1.0) x 1 channelTS - Transport Stream Interface x 1 channel32-/16-bit timer x 2 channelsDMAC - Direct Memory Access Controller x 16 channelsSIG - Signature Unit x 3 channelsEthernet link x 1 channelIDE66 (ATA/ATAPI-5) x 1 channelRLD - Run-length decompressionEmbedded TCON - Timing controller functionHost interfaceUSB 2.0 Host/Function x 1 channel, USB 2.0 Host x 1 channelAPIX (Tx 3 channels, Rx 1 channel - only in MB86R12)
Note: See Limitation of the APIX Interface below.
RestrictionsThe DDR2/3 controller does not support small size WRAP burst (16bytes or less).
Please replace it with INCR burst transfer or SINGLE transfer when you want to transfer 32-bitWRAP4 DMAC.
GPIO peripheral mode is not supported.HDMAC external DMA request is not supported (only peripheral DMA requests are supported).8-bit SRAM and 8-bit NOR Flash are not supported by the External Bus Controller (8-bit NAND Flash
is supported).External interrupt#3 signal is internal clipped. 7 external interrupts can be used (0-2, 4-7).UART flow function supports only channela 0-3 (channels 4 and 5 are not supported). The ethernet controller Tr/Tf characteristic specification at C_load 5pf is 1.50ns, which does not
comply to the GMII specification. Therefore, the system designer should implement the buffer on thePCB in some other way in order to fulfill the Tr/Tf specification.
SFI0_HOLD can use only SFI 1(Pix multiplex #B).Limitations of the APIX Interface:
When I2S is connected with APIX2TX, the following registers cannot be used. (I2S master mode):CNTREG.SMPL, CNTREG.RXDIS, CNTREG.BEXT, OPRREG.RXENB INTCNT.RFTH -INTCNT.RPTMR INTCNT.RXFIM, INTCNT.RXFDM, NTCNT.EOPM, INTCNT.RXOVM,
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INTCNT.RXUDM, INTCNT.RBERM, INTCNT.FERRM, STATUS.RXNUM, STATUS.RXFI,STATUS.EOPI, STATUS.RXOVR, STATUS.RXUDR, STATUS.FERR, STATUS.TBERR,DMAACT.RDMACT, DMAACT.RL1E0
When I2S is connected with APIX2RX, the following registers cannot be used. (I2S slave mode):CNTREG.FSLN, CNTREG.TXDIS, CNTREG.FRUN, CNTREG.ECKM, CNTREG.MSKB,CNTREG.OVHD, CNTREG.CKR, OPRREG.TXENB, NTCNT.TFTH, INTCNT.TXFIM,INTCNT.TXFDM, INTCNT.TXOVM, INTCNT.TXUD0M, INTCNT.TBERM, INTCNT.TXUD1M,STATUS.TXNUM, STATUS.TXFI, STATUS.BSY, STATUS.TXOVR, STATUS.TXUDR0,STATUS.TXUDR1, STATUS.RBERR, DMAACT.TDMACT, DMAACT.TL1E0Please set the value of the CNTREG.ECKM register according to the value of theAPIXCTL.I2S_CKSELregister of CCNT when you connect I2S with APIX2TX.
The herein integrated APIX2 Transmitters are not compliant to the APIX2 Requirement Specificationand Functionality Specification, max cable length in 3Gb/s mode is limited to 1.5m.
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1.2. Block Diagrams
The functional figures show the functional blocks of MB86R11F/12/13 devices.
1.2.1. MB86R11F Block Diagram
Figure 1.1. : MB86R11F block diagram
Video Capture Unit 2
Video Capture Unit 1
Video Capture Unit 0
Video Capture Unit 3
Display Ctrl2
12x PWM
5x I2C
4x I2S
128x GPIO
7x EXIRCExternal Bus
Controller
3D Graphics Engine(Unified Shader Array)
Pixel Engine
ARMNEONDSP
L1 I-Cache
32k
L1 D-Cache
32k
L2 Cache
128k
2x16/32bit Timer
2x8ch DMA
Watchdog
Internal96KB SRAM
ARM Cortex A9
(1000 DMIPS)
Display Ctrl0
Display Ctrl1
HOST I/F
USB
3x SDIO
IrDA
2x ADC
DDR2/316/32-bit
Media LB
SIG Unit
TCON
2 x CAN Media LBMOST 25/50 Ethernet6x UART/USART
TS I/F
HS_SPI
2x SFIIDE66
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1.2.2. MB86R12 Block Diagram
Figure 1.2. : MB86R12 block diagram
12 x PWM
5x I2C
4x I2S Interface
External Bus
3D Graphics Engine(Unified Shader Array)
2x ADC
DDR2/316/32-bit
MediaLB
2 x CAN
HS_SPI
2x 16/32bit Timer
2x SFI
2x TS Interface
L1I-Cache
32K
2x 8ch DMA Watchdog
ARM Cortex A9 + NEON(1000 DMIPS)
L1D-Cache
32K
L2Cache128K
Internal96kB
SRAM
7x ext. IRQ
IrDA
3x SDIO
APIX
IDE66
HOST Interface
122 x GPIO
Video Capture Unit 0
Video Capture Unit 1
Video Capture Unit 2
Video Capture Unit 3Pixel Engine
TCON
SIG Unit
Display Ctrl 0
Display Ctrl 0
Display Ctrl 0
MediaLBMOST 25/50 Ethernet
6 x UART/USART
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1.2.3. MB86R13 Block Diagram
Figure 1.3. : MB86R13 block diagram
1.3. Outline of Each Functional Block
AXI0 Bus (64bit)Cortex A9Video Capture Unit x 4Display Unit x 3Write Back Unit3D Graphics EnginePixel EngineCommand Sequencer x 2DDR2/DDR3 ControllerAXI-DMA Controller (XDMAC) 8 channels
12 x PWM
5x I2C
4x I2S Interface
External Bus
3D Graphics Engine(Unified Shader Array)
2x ADC
DDR2/316/32-bit
MediaLB
2 x CAN
HS_SPI
2x 16/32bit Timer
2x SFI
2x TS Interface
L1I-Cache
32K
2x 8ch DMA Watchdog
ARM Cortex A9 + NEON(1000 DMIPS)
L1D-Cache
32K
L2Cache128K
Internal96kB
SRAM
7x ext. IRQ
IrDA
3x SDIO
IDE66
HOST Interface
122 x GPIO
Video Capture Unit 0
Video Capture Unit 1
Video Capture Unit 2
Video Capture Unit 3Pixel Engine
TCON
SIG Unit
Display Ctrl 0
Display Ctrl 0
Display Ctrl 0
MediaLBMOST 25/50 Ethernet
6 x UART/USART
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Built-in SRAM (XSRAM) 32kBExternal Bus ControllerIrDATS Interface
AHB0 Bus (32bit)USB 2.0 HOSTUSB 2.0 HOST/FUNCSDIO x 3MediaLBBuilt-in SRAM (HSRAM) 32kBBoot ROM 64kBHOST Interface
AHB1 Bus (32bit)IDE66Ethernet LinkWatchdog Timer BBuilt-in SRAM (HSRAM) 32kBAHB-DMA controller (HDMAC) 8channelsRun-length Decompression (RLD)SFI x 2I2S x 4
AHB2 Bus (32bit)SIG x 3Display Controller 2 (register access)Command Sequencer (register access)Pixel Engine (register access)DDR Memory Controller (register access)TCONHS_SPIAPIX (Tx 3ch, Rx 1ch)
APB0 Bus (32bit)UART/USART x 6Timers 32bit/2 channelsWatchdog Timer AExternal Interrupt Controller 3 channels x 1; 4 channels x 1Boot ControllerGPIO 128 channelsClock Reset Generator S (for SSCG)Clock Reset Generator P (for non SSCG)
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External Bus Controller (register access)PWM (4 channels) x 3A/D Converter x 2CCNTI2C x 5CAN x 2Power Management Unit
1.4. System Configuration
The following diagrams show an overview of the system configuration.
Figure 1.4. : MB86R11F system configuration
GDCGDC
SDSDIOP-ATAIDE66
HDD
ARM926EJ-SCortex-A9
SD card
LCD #1
LCD #2
UART
UART/
USART
Audio
codec
JTAGJTAG
CANCAN
Buttons
16550
ICE
ADCADCUSBHost/Function
USB
Host/Func
USB
Host I/FUSB
Adapter
USB Host
CAN
Device
I2SI2S I2CI2C SPISFIGPIOGPIO
Speaker #1 Speaker #
Microphone
MOST
MediaLBMediaLB
DDR2 IFDDRC
DDRSDRAM
EXTBUSEBC
NORFlash
PWMPWM
USB device
BT656
DVD
Audio
codec
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Figure 1.5. : MB86R12/13 system configuration
GDCGDC
SDSDIOP- ATAIDE66
HDD
ARM926EJ -SCortex - A9
SD card
LCD #1
LCD #2
UART
UART/USART
JTAGJTAG
CANCAN
Buttons
16550
ICE
ADCADC
CAN
Device
I2SI2S I2CI2C
SPISPIGPIOGPIO
Speaker #1 Speaker #2
Microphone
MOST
MediaLBMediaLB
Audio codec
MB86R12/13 DDR2 IFDDRC
DDRSDRAM
EXTBUSEXTBUS
NOR Flash
PWMPWM
BT656
DVD
Audio codec
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1.5. Function List
Table 1.2 shows the function list of the MB86R11F/12/13.
Table 1.2. : Function listFunctions Description
CPU core
- ARM Cortex A9TM processor core- Core operation frequency: MB86R11F: 400MHz; MB86R12/13: 533MHz- 32kB instruction cache- 32kB data cache- PTM and JTAG ICE debugging interface- Java acceleration (Jazelle technology)
Bus architecture - Multilayer AXI/AHB/APB bus architecture
Interrupt- Software Generated interrupt x 16 channels- External interrupt x 7channels- Internal interrupts
Clock
- Operation frequency MB86R11F: 400MHz (CPU), 200MHz (AXI), 100MHz (AHB), 50MHz (APB)MB86R12/13: 533MHz (CPU), 266MHz (AXI), 133MHz (AHB), 66MHz (APB)- Low power consumption mode (clock to block is stoppable)
Reset - Hardware reset, software reset, and watchdog reset
External bus controller
- Three chip select signals- Provided 128Mbyte address space in each chip select (Max 256Mbyte)- Supported 16/32-bit width SRAM/NOR Flash- Supported 8/16-bit width NAND Flash- Programmable weight controller
DDR3/DDR2 controller
- Supported: DDR3SDRAM (MB86R11F: DDR3-800; MB86R12/13: DDR3-800/1066) DDR2SDRAM (MB86R11F: DDR2-800/667; MB86R12/13: DDR2-800/667)- Connectable capacity: 2048Mbit ~ 4096Mbit x 2 or 2048Mbit ~ 4096Mbit x 1- I/O width: Selectable from x16/x32bit- Max. transfer rate: MB86R12/13: DDR3 533MHz/1066Mbps, DDR2 400MHz/800Mbps MB86R11F: 400MHz/800Mbps
Internal SRAM- Mounted general purpose SRAM of 32kB x 2 on AHB (32-bit bus)- Mounted general purpose SRAM of 32kB x 1 on AXI (64-bit bus)
DMAC- AHB connection x 8 channels- AXI connection x 8 channels- Transfer mode: Block, burst, and demand
Timer - 32/16-bit programmable x 2 channels
GPIO - Max 128bit
PWM- Internal 12 channels- Duty ratio and phase are configurable
A/D converter- 12bit successive approximation type A/D converter x 2 channels- Sampling rate: 500kS/s (max. sampling plate)- INL: ± 4.0LSB, DNL: ± 4.0LSB
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Capture/Display Controller
- GDC (graphic display controller) has role of display and capture. Two main display controllers and one simplified display controller are available. The two main display controllers can show up to 8 different layers whereas the simplified can show 1 layer. Four video capture controllers with crossbar switch can capture four independent video sources with flexibility.Note: Simultaneous usage of these function depends on available SDRAM bandwidth and pin multiplex mode.
3D Graphics Engine
- OpenGL ES2.0 compliant.- Support for 2D concave polygon.- Support for Anti-aliased lines.- Support for 16/32-bit color format.- Support for 32-bit RGBA/ABGR/ARGB frame buffer or texture format.- Support for 8/16/32-bit depth buffer format.
Pixel Engine - Pixel processing units used for block image transfer (blt) operations to a memory.
I2S
- Audio output x 4 channels (L/R) /Audio input x 4 channels (L/R)
- Supported three-wire serial (I2S, MSB-Justified) and serial PCM data transfer interface - Master/Slave operations are selectable- Resolution capability: Max. 32bit/sample
UART/USART - Max. 6 channels- 4 channel: capable of input/output CTS/RTS signals- Enabled DMA transfer
I2C - 3.3V pin x 5 channels- Supported standard mode (max. 100kbps)/high-speed mode (max. 400kbps)- Master/Slave operations are selectable
SFI - 2 channels- Full duplex/Synchronous transmission- Transfer data length: 1bit unit (max. 32bit) (programmable setting)
CAN - Mounted BOSCH C_CAN module 2 channels- Conformed to CAN protocol version 2.0 part A and B- I/O voltage: 3.3V
MediaLB - 16 hardware channels- MediaLB clock speed: 256Fs/512Fs/1024Fs- Internal 9kbit channel buffer
IDE
- Supported ATA/ATAPI-5- Equipped 1 channel- Supported primary IDE channel- Equipped transmission FIFO buffer (512byte x 2) and reception FIFO buffer (512byte x 2) for the ultra DMA transfer- Unsupported single word DMA and multi word DMA
SD memory
- Conformed to SD memory card physical layer specification 1.0- Equipped 3 channel - Supported SD memory card and multimedia card- Unsupported SPI mode and CPRM
CCNT - Chip General Control
Table 1.2. : Function list (Continued)Functions Description
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IrDA
- IrDA 1.0 SIR (2.4k – 115.2kbps)- IrDA 1.1 MIR (0.576Mbps or 1.152Mbps)- IrDA 1.1 FIR (4.0Mbps)- 32 step x 2 transmitting and receiving FIFO
SIG
- 3 channels- Generation of 2 different picture signatures for each color channel: - Summation of color values - CRC-32 over color values- Programmable evaluation window position and size- Programmable evaluation window mask- Automatic monitoring using reference signature registers- Interrupt generation- Programmable picture source- Self restoring error counter
Ethernet
- Compliant with IEEE802.3 specification- Supports 10/100/1000Mbps data transfer rates- Supports 10/100/1000Mbps Full-Duplex and Half-Duplex modes- IEEE802.3 GMII and MII interfaces
TCON
- RBM (RSDS Bit Mapping)
Conforms to RSDSTM Standard 1.0 (National Semiconductors) Support for single bus (Multidrop bus with single or double end termination) Mapping for 8bit color depth Data and clock outputs can flexible be assigned to the pool of available pins to ease board design- TSIG (Timing Signal Generator) Freely programmable waveforms 12 pulse generators 1 signal sequencer with max. 64 signal transitions 12 signal mixers with a programmable function table Inversion control signal for transition minimizing (useful for TTL applications)- IO module Output RGB data Control of Combined TTL/RSDS IO cells Output RSDS clock Output TTL clock 90° phase shift
- Adjustable differential swing
Table 1.2. : Function list (Continued)Functions Description
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USB
- Function Link and Host Link combined with one PHY- Host Link with one PHY- Built in DMAC only for Function Link- Function Link has ControlOut/In Endpoint, Bulk In/Out Endpoint, Interrupt In Endpoint- Function Link contains 64byte buffer for Control Endpoint, 512byte x 2 buffer for Bulk End-point, 64byte buffer for Interrupt Endpoint- Contains a controller supporting both the EHCI and OHCI- Handles the USB2.0 HS, FS and LS protocols- Host Link contains 512bytes of packet buffersNote: USB only in MB86R11F
RLD
- Support of simple run-length compression format (TGATM similar format)- 8/16/24/32-bit per pixel formats supported- AHB master for data output- FIFO for data input and output, allows burst access of AHB
TS- 2 serial TS input channels and 1 parallel (8bit) TS input channel are supported.- The TSD interface supports serial mode input rate up to 66Mbit/s. Parallel mode input rate up to 20Mbit/s.
HOST Interface - Supports communication to a host CPU.
HS_SPI - Supports legacy as well as the dual-bit and quad-bit modes of SPI operation- Up to 4 slave devices
Watchdog Timer - 3 Watchdog timers: WDT A, WDT B, Cortex-A9 Internal WDT
PMU- Controls power switch transistor in LSI to reduce power consumption.- Power supply On/Off control and the interrupt of an unused block.
APIX - The APIX2RX_link for the MB86R12 links the different APIX2RX interfaces to the bus system and to the capture units.Note: APIX only in MB86R12.
JTAG- Conformed to IEEE1149.1 (IEEE Standard Test Access Port and Boundary-Scan Architec-ture)- Supported JTAG ICE connection
Note: Number of layer of simultaneous display and number of output display as well as capture input for displaying in high resolution may be restricted due to data supply capacity of graphics memory (DDR Memory controller).
Table 1.2. : Function list (Continued)Functions Description
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1.6. Package
1.6.1. MB86R11F Package
544-pin plastic PBGA Lead pitch 1.00 mm
Package width ×package length 27.00 mm × 27.00 mm
Lead shape Ball
Sealing method Plastic mold
Mounting height 2.36 mm MAX
Weight 2.80 g
544-pin plastic PBGA(BGA-544P-M04)
(BGA-544P-M04)
C 2008-2010 FUJITSU SEMICONDUCTOR LIMITED BGA544004Sc-3-2
27.00(1.063)
27.00(1.063)
C 0.15(.006) C
A
ø0.60±0.10(.024±.004)Mø0.25(.010)
ø0.10(.004) MCC
AB
1.00(.039)REF
2625242322212019181716151413121110987654321
AF AE AD AC AB AA YWV U RT NP LM JK HG F E DC B A
24.00±0.10(.945±.004)
24.00±0.10(.945±.004)
INDEX
(.984)25.00
B1.00(.039)
0.20(.008) (4X)
Max.2.36(.093)
Min.0.30(.012)
(.065±.004)1.66±0.10
25.00(.984)
REF1.00(.039)
0.50(.020)
1.00(.039)
0.50(.020)
Dimensions in mm (inches).Note: The values in parentheses are reference values.
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1.6.2. MB86R12/13 Package
The MB86R12/13 is provided in a thermally enhanced ball grid array (TEBGA) package with 544 balls.
Figure 1.6. : TEBGA-544 Package dimensions
Note: The contents of this figure are subject to change without notice. Customers are advised to consult withSocionext sales representatives before ordering. Socionext Europe GmbH is unable to assume responsibilityfor infringement of any patent rights or other rights of third parties arising from the use of the information orpackage dimensions in this document.
544-pin plastic TEBGA Lead pitch 1.00 mm
Package width ×package length 27.00 mm × 27.00 mm
Lead shape Ball
Sealing method Plastic mold
Mounting height 2.36 mm MAX
Weight 3.70 g
544-pin plastic TEBGA(BGA-544P-M02)
(BGA-544P-M02)
C 2008-2010 FUJITSU SEMICONDUCTOR LIMITED BGA544002Sc-2-2
27.00(1.063)
27.00(1.063)
C 0.15(.006) C
A
ø0.60±0.10(.024±.004)Mø0.25(.010)
ø0.10(.004) MCC
AB
1.00(.039)REF
2625242322212019181716151413121110987654321
AF AE AD AC AB AA
24.00±0.10(.945±.004)
24.00±0.10(.945±.004)
INDEX
(.984)25.00
B1.00(.039)
0.20(.008) (4X)
Max.2.36(.093)
Min.0.30(.012)
(.065±.004)1.66±0.10
25.00(.984)
REF1.00(.039)
0.50(.020)
1.00(.039)
0.50(.020)
Dimensions in mm (inches).Note: The values in parentheses are reference values.
YWV U T R P N LM K J H FG E DC B A
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1.7. Device Handling
1.7.1. Latch-Up
If a voltage higher than VDD or a voltage lower than VSS are applied to an input and/or output pin of a CMOS IC,a so-called 'latch-up' phenomenon could occur. In this case, the power supply current might increase suddenly,leading to the thermal destruction of the device.
Note: Do not exceed the maximum ratings.
1.7.2. Unused Pin
If an input pin is not used, apply a pull-up or pull-down resistor as specified to avoid the permanent destruction ofthe device due to the latch-up phenomenon, caused by high resistance.
1.7.3. Power Supply Pin
Connect all VDD/VSS pins to the same power supply. Otherwise the device will not work correctly, not even in theguaranteed operating range.
1.7.4. Oscillation Circuit
Noise will affect the XTAL_XI and XTAL_XO external pins, leading to malfunction. Therefore, the oscillator and itsbypass capacitor should be placed near to the device's XTAL_XI/XTAL_XO pins.The surroundings of these pins require carefully grounding.
1.7.5. Attention PLL Clock's Working
If the external clock stops, the device might continue operating at the same frequency of the internal PLL-oscillator.This operation is outside the guaranteed operation range.
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1.8. Pinning
1.8.1. Pin Assignment
The following diagram shows the pin-out assignment of the MB86R11F/12/13.
Figure 1.7. : Top view of the pin assignment (pin number)
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26
A 1 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 80 79 78 77 76 A
B 2 101 192 191 190 189 188 187 186 185 184 183 182 181 180 179 178 177 176 175 174 173 172 171 170 75 B
C 3 102 193 276 275 274 273 272 271 270 269 268 267 266 265 264 263 262 261 260 259 258 257 256 169 74 C
D 4 103 194 277 352 351 350 349 348 347 346 345 344 343 342 341 340 339 338 337 336 335 334 255 168 73 D
E 5 104 195 278 353 420 419 418 417 416 415 414 413 412 411 410 409 408 407 406 405 404 333 254 167 72 E
F 6 105 196 279 354 421 480 479 478 477 476 475 474 473 472 471 470 469 468 467 466 403 332 253 166 71 F
G 7 106 197 280 355 422 465 402 331 252 165 70 G
H 8 107 198 281 356 423 464 401 330 251 164 69 H
J 9 108 199 282 357 424 463 400 329 250 163 68 J
K 10 109 200 283 358 425 481 508 507 506 505 504 503 502 462 399 328 249 162 67 K
L 11 110 201 284 359 426 482 509 528 527 526 525 524 501 461 398 327 248 161 66 L
M 12 111 202 285 360 427 483 510 529 540 539 538 523 500 460 397 326 247 160 65 M
N 13 112 203 286 361 428 484 511 530 541 544 537 522 499 459 396 325 246 159 64 N
P 14 113 204 287 362 429 485 512 531 542 543 536 521 498 458 395 324 245 158 63 P
R 15 114 205 288 363 430 486 513 532 533 534 535 520 497 457 394 323 244 157 62 R
T 16 115 206 289 364 431 487 514 515 516 517 518 519 496 456 393 322 243 156 61 T
U 17 116 207 290 365 432 488 489 490 491 492 493 494 495 455 392 321 242 155 60 U
V 18 117 208 291 366 433 454 391 320 241 154 59 V
W 19 118 209 292 367 434 453 390 319 240 153 58 W
Y 20 119 210 293 368 435 452 389 318 239 152 57 Y
AA 21 120 211 294 369 436 437 438 439 440 441 442 443 444 445 446 447 448 449 450 451 388 317 238 151 56 AA
AB 22 121 212 295 370 371 372 373 374 375 376 377 378 379 380 381 382 383 384 385 386 387 316 237 150 55 AB
AC 23 122 213 296 297 298 299 300 301 302 303 304 305 306 307 308 309 310 311 312 313 314 315 236 149 54 AC
AD 24 123 214 215 216 217 218 219 220 221 222 223 224 225 226 227 228 229 230 231 232 233 234 235 148 53 AD
AE 25 124 125 126 127 128 129 130 131 132 133 134 135 136 137 138 139 140 141 142 143 144 145 146 147 52 AE
AF 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 AF
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26
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1.8.2. Functional Pin Assignment
1.8.2.1. MB86R11F Pin Assignment
Figure 1.8. : MB86R11F pin assignment (pin name)
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1.8.2.2. MB86R12/13 Pin Assignment
Figure 1.9. : MB86R12/13 pin assignment (pin name)
1.8.3. Pin Descriptions
Refer to the attached files for the functional description of each pin and the functional groups.MB86R11-PinList.xls
MB86R12_Pinlist.xlsxMB86R13_Pinlist.xlsx
11 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26
A VDDA SDOUTT0MSDOUTT1
MSDOUTT2
M VDDA SDI NRM VCM0 VSSA XTAL_XO A
B VSSA SDOUTT0PSDOUTT1
PSDOUTT2
P VSSA SDI NRP VDDA VSSA VDDEA B
C VSSA VDDA VSSA VDDA VCM1 VSSA ATST XTAL_XI VSSA C
D VSSA SDI NT0M SDI NT1M SDI NT2M VSSA SDOUTRM VDDA VSSA D
E VSSA SDI NT0P SDI NT1P SDI NT2P VSSA SDOUTRP VSSA E
F VDDA VSSA VDDA VDDA_VCO VSSA VDDI A F
G G
H H
J J
K VDD K
L DDRVDE VDD L
M M
N N
P P
R R
T DDRVDE VDD T
U VDD U
V V
W W
Y Y
AA VSS VSS VSS VSS AA
AB AB
AC AC
AD AD
AE VSS AE
AF VSS AF
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26
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2. Electric Characteristics
2.1. Maximum Ratings
Table 2.1 and Table 2.2 , and Table 2.3 show the maximum ratings.
Note: • Applying stress exceeding the maximum ratings (voltage, current, temperature, etc.) may cause
damage to semiconductor devices. Never exceed the ratings above.• Never connect IC outputs or I/O pins directly, or connect them to VDD or VSS directly; otherwise
thermal destruction of elements will result, but which does not apply to pins designed to prevent signal collision.
• Provide ESD protection, such as grounding when handling the product; otherwise externally charged electric charge flows inside the IC and discharges, which may result in damage to the circuit.
• Applying voltage higher than VDD or lower than VSS to I/O pins of CMOS IC, or applying voltage higher than the ratings between VDD and VSS may cause latch up. The latch up increases supply current, resulting in thermal destruction of elements. Never exceed the maximum ratings.
Table 2.1. : Maximum ratingParameter Symbol Rating Unit
Supply voltage
VDDSSCG0VDDSSCG1VDD
VDDE
DDRVDE
0.5 to 1.8 1)
0.5 to 1.8 2)
0.5 to 1.8 2)
0.5 to 4.0 3)
0.5 to 2.5 4)
V
Input voltage VI
0.5 to VDD + 0.5 (< 1.8V)0.5 to VDDE + 0.5 (< 4.0V)0.5 to DDRVDE + 0.5 (< 2.5V)
V
Output voltage VO
0.5 to VDD + 0.5 (< 1.8V)0.5 to VDDE + 0.5 (< 4.0V)0.5 to DDRVDE + 0.5 (< 2.5V)
V
Storage temperature TST 55 to 125 C
Junction temperature TJ 40 to 125 C
Supply current ID
MB86R11F
VDD: 3000
VDDE: 100 DDRVDE (1.5V, 800Mbps): 350DDRVDE (1.8V, 800Mbps): 400
MB86R12/13
VDD: 33305)
VDDE: 1005)
DDRVDE (1.5V, 1066Mbps): 4505)
DDRVDE (1.8V, 800Mbps): 4005)
mA
1): Internal power supply2): Power supply for PLL3): Power supply for I/O4): Power supply for SSTL_15 I/O5): Current specification necessary for each voltage power supply,0
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The maximum ratings are the limits that must not be exceeded. As long as USB PHY is used withing the rangepredetermined in the maximum ratings, it will not summer permanent damage. However, this does not ensurenormal logic operation.
Table 2.2. : ADC maximum ratingParameter Symbol Rating Unit
Supply voltage AD_AVD 0.5 to 4.0 V
Input voltage
AD_VRH0AD_VRH1AD_VRL0AD_VRL1AD_VIN0AD_VIN1
0.5 to VDDE + 0.5 (< 4.0V) V
Output voltageAD_VR0 AD_VR1
0.5 to VDDE + 0.5 (< 4.0V) V
Junction temperature TJ 40 to 125 C
Table 2.3. : USB maximum ratingsParameter Symbol Rating Unit
Supply voltage
USBx_AVDF1 USBx_AVDB
Vss-0.5 to 4.0 V
USBx_AVDF2USBx_AVDP
Vss-0.5 to 1.8 V
Junction temperature TJ -40 to 125 C
Supply current
USBx_AVDF1 USBx_AVDB
Total 37.5 mA
USBx_AVDF2 19.2 mA
USBx_AVDP 13.0 mA
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Note: • To ensure that the MB86R11F/12/13 device does not exceed the maximum Tc during operation,
an adequate thermal solution must be designed• If the MB86R11F/12/13 exceeds the maximum TC during operation, the device functionality is not
guaranteed.
Table 2.4. : Thermal design
Device PackageJA* JT** Operating temperature in °C
in K/W Ta Tc
MB86R11F PBGA 16.3 1.0 40 to 85 40 to 105
MB86R12 / MB86R13 TEBGA 13 2.5 40 to 85 40 to 105JAJunction-to-ambient thermal resistanceJTJunction-to-top characterization parameterTaAmbient temperatureTcCase temperatureTjJunction temperature*Measured according to JEDEC standard (with standard board 100x100mm, standard test environment)** Measured with test chip on 84x117mm 4-layer board.Important: Both temperature conditions must be satisfied!
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2.2. Recommended Operating Conditions
Table 2.5 shows 3.3V standard CMOS I/O recommended operating conditions
Table 2.5. : 3.3V standard CMOS I/O recommended operating conditions
Parameter SymbolValue
UnitMin Typ Max
Power supply voltage
VDDE 3.0 3.3 3.6 V
VDD SSCG0VDDSSCG1VDD
1.1 1.2 1.3 V
VDDEA VDDAVDDA_VCOVDDIA
3.01.11.11.1
3.31.21.21.2
3.61.31.31.3
V
Input voltage(High level)
3.3V CMOSVIH
2.0 - VDDE + 0.3 V
3.3V CMOS Schmitt 2.1 - VDDE + 0.3 V
Input voltage(Low level)
3.3V CMOSVIL
0.3 - 0.8 V
3.3V CMOS Schmitt 0.3 - 0.7 V
Schmitt hysteresis voltage VH 0.2 - 1.4 V
Table 2.6. : SSTL15 IO(SSTL15 mode) recommended operating conditionsParameter Symbol Min Typ Max Unit
Power supply voltageDDRVDE 1.425 1.500 1.575 V
VDD 1.10 1.20 1.30 V
Reference voltage VREF DDRVDEx0.49 DDRVDEx0.5 DDRVDEx0.51 V
Termination voltage VTT - DDRVDE/2 - V
H level input Single (DC) VIH(DC) VREF + 0.1 - DDRVDE V
L level input Single (DC) VIL(DC) VSS - VREF 0.1 V
H level input Single (AC) VIH(AC) VREF + 0.175 - *) V
L level input Single (AC) VIL(AC) *) - VREF 0.175 V
H level input Differential (DC) VIHdiff(DC) 0.2 - *) V
L level input Differential (DC) VILdiff(DC) *) - 0.2 V
H level input Differential (AC) VIHdiff(AC) 0.35 - *) V
L level input Differential (AC) VILdiff(AC) *) - 0.35 VStandard SSTL15 recommended operating conditions (except from JESD79-3E)*): Overshoot / Undershoot rule of JESD79-3E.
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Note: • The recommended operating conditions are primarily intended to assure the normal operation of
semiconductor device. • The values of electrical characteristics are guaranteed under the requirements above, so use the
product accordingly. • Using the product without observing the conditions may affect the product’s reliability.• Performance of this product is not guaranteed if used under unspecified conditions and by an
unspecified combination of logic. • Supply power ON/OFF so that power for SSCG0VDD/SSCG1VDD does not exceed VDD.• All powers must be supplied.
Table 2.7. : SSTL15 IO(SSTL18 mode) recommended operating conditionsParameter Symbol Min Typ Max Unit
Power supply voltageDDRVDE 1.7 1.8 1.9 V
VDD 1.10 1.20 1.30 V
Reference voltage VREF DDRVDEx0.49 DDRVDEx0.5 DDRVDEx0.51 V
Termination voltage VTT VREF 0.04 VREF VREF + 0.04 V
H level input Single (DC) VIH(DC) VREF + 0.125 - DDRVDE + 0.3 V
L level input Single (DC) VIL(DC) 0.3 - VREF 0.125 V
H level input Single (AC) VIH(AC) VREF + 0.200 - VDE + 0.3 V
L level input Single (AC) VIL(AC) 0.3 - VREF 0.200 V
Standard SSTL15(SSTL18 mode) recommended operating conditions (except from JESD79-2E)
Table 2.8. : USB recommended operation condition
Parameter SymbolValue
UnitMin Typ Max
Supply voltage
USBx_AVDF1USBx_AVDB
3.0 3.3 3.6 V
USBx_AVDF2 1.1 1.2 1.3 V
USBx_AVDP 1.1 1.2 1.3 V
The clock input to USBx_CRYCLK48 should be meet the following requirements.- Clock of 48MHz±110ppm- Jetta of 100ps or less
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2.3. Power ON
2.3.1. Recommended Power ON/OFF Sequence
The recommended order of power supply turning On/Off is as follows:
Power On: VDD, SSCG0VDD, SSCG1VDDDDRVDEVDDEgeneric signalPower Off: Generic signalVDDEDDRVDEVDD, SSCG0VDD, SSCG1VDD
Note: After VDD is switched On, there is no time limit to switch On/Off other power supplies.
Figure 2.1. : The order of recommended power supply
2.3.2. Alternative Power ON/OFF Sequence (not recommended)
When VDDE and/or DDRVDE power supply are turned On before VDD, the following limitations must beconsidered. See Figure 2.2.
Figure 2.2. : The order of alternative power supply (not recommended)
Note: As long as VDD is not supplied, bus conflict of external pins may occur due to undefined IO level anddirection.
VDDSSCG0VDDSSCG1VDD
VDDE
DDRVDE
VDD
VDDE1sec or
less1sec or
less
DDRVDE 0.1sec or less
0.1sec or less
VDD
Note:� Do not continuously supply VDDE longer than 1sec, if VDD is not supplied.� Do not continuously supply DDRVDE longer than 0.1sec, if VDD is not supplied
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2.3.3. Power ON Timing Chart
Figure 2.3. : Power on timing chart
Note: • Input REFCLK immediately after power ON.• Input the XTRST, XRST pins to ‘Low’ when power ON.• Keep the XTRST and XRST pins ‘High’ after input "L" for at least 100 clocks of REFCLK. For
example: 25MHz needs 4µs, 33.33MHz needs 3µs.• After PLL LockUp Time, registers can be accessed.
VDDE
DDRVDE
XRST
XTRST
(Note) The clock is an image, and no actual cycle.
REFCLKInput clock immediately after power ON.
PLL Lock-Up time (Max: 200µs)100 clocks of REFCLK
XSRST Please input XSRST after XRST is “H“.
When JTAGSEL="H", the XTRST input is necessary.
Input “L“ when power ON.
Input “L“ when power ON.
Input “L“ when power ON.
VDDSSCG0VDDSSCG1VDD
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2.3.4. Power On Inrush Current
When powering On the 1.2V supply (VDD), the inrush current drawn by the chip might be higher than the maximumcurrent under full work load of the chip. The relevant max values are shown in Table 2.9 . Please dimension the power supply accordingly or increase theslew rate.
The inrush current has no influence to life-time of the device. Refer to the table below.
Table 2.9. : Power ON inrush currentSupply slew rate 1ms 3ms 5ms 10ms 50ms 100ms
VDDI inrush current (Max.1) 7.420A 4.11A 2.444A 1.438A 0.413A 0.243A
VDDI inrush current (Typ.) 0.622A 0.45A 0.126A 0.066A 0.015A 0.008A1 Max condition: Tj = -40 °C , VDD = 1.3V
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2.4. DC Characteristics
2.4.1. 3.3V Standard CMOS I/O
Table 2.10 shows 3.3V Standard CMOS I/O DC characteristics. Measurement condition: VDDE = 3.3 ±0.3 V, VSS = 0 V, Tj = 40 to 125°C
Table 2.10. : Standard CMOS I/O DC characteristics
Parameter Symbol ConditionRating
UnitMin Typ Max
H level input voltage VIH 2.0 - VDDE + 0.3 V
L level input voltage VIL 0.3 - 0.8 V
H level output voltage VOH IOH = 100mA VDDE 0.2 - VDDE V
L level output voltage VOL IOL = 100mA 0 - 0.2 V
H level output V-I characteristic -
Driving capability 2mA IOH = 2mA
Refer to Figure 2.4, Figure 2.5, and Figure 2.6
-Driving capability 4mA IOH = 4mA
Driving capability 6mA IOH = 6mA
Driving capability 8mA IOH = 8mA
L level output V-I characteristic -
Driving capability 2mA IOH = 2mA
-Driving capability 4mA IOH = 4mA
Driving capability 6mA IOH = 6mA
Driving capability 8mA IOH = 8mA
Input leakage current IL - - 10 A
Pull-up/pull-downresistance
RpPull-up VIL=0V
Pull-down VIH= VDDE15 33 70 kΩ
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2.4.1.1. 3.3V Standard CMOS I/O V-I Characteristic (Driving Capability 2mA)
Conditions:MIN: Process = Slow TJ = 125C VDDE = 3.0 VTYP: Process = Typical TJ = 25C VDDE = 3.3 V
MAX: Process = Fast TJ = 40C VDDE = 3.6 V
Figure 2.4. : 3.3V standard CMOS I/O V-I characteristic (Driving capability 2mA)
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2.4.1.2. 3.3V Standard CMOS I/O V-I Characteristic (Driving Capability 4mA)
ConditionsMIN: Process = Slow TJ = 125C VDDE = 3.0 VTYP: Process = Typical TJ = 25C VDDE = 3.3 V
MAX: Process = Fast TJ = 40C VDDE = 3.6 V
Figure 2.5. : 3.3V standard CMOS I/O V-I characteristic (Driving capability 4mA)
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2.4.1.3. 3.3V Standard CMOS I/O V-I Characteristic (Driving capability 6mA)
ConditionsMIN: Process = Slow TJ = 125C VDDE = 3.0 VTYP: Process = Typical TJ = 25C VDDE = 3.3 V
MAX: Process = Fast TJ = 40C VDDE = 3.6 V
Figure 2.6. : 3.3V standard CMOS I/O V-I characteristic (Driving capability 6mA)
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2.4.1.4. 3.3V Standard CMOS I/O V-I Characteristic (Driving capability 8mA)
ConditionsMIN: Process = Slow TJ = 125C VDDE = 3.0 VTYP: Process = Typical TJ = 25C VDDE = 3.3 V
MAX: Process = Fast TJ = 40C VDDE = 3.6 V
Figure 2.7. : 3.3V standard CMOS I/O V-I characteristic (Driving capability 8mA)
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2.4.2. SSTL15 I/O
Table 2.11. : Output Driver DC Characteristics, assuming RZQ=240Ω by SSTL15 modeRONnom Resistor Vout Min Nom Max Unit Notes
34
RON34pd
VOLdc=0.2xDDRVDE 0.6 1.0 1.1 RZQ/7 1)
VOMdc=0.5xDDRVDE 0.9 1.0 1.1 RZQ/7 1)
VOHdc=0.8xDDRVDE 0.9 1.0 1.4 RZQ/7 1)
RON34pu
VOLdc=0.2xDDRVDE 0.9 1.0 1.4 RZQ/7 1)
VOMdc=0.5xDDRVDE 0.9 1.0 1.1 RZQ/7 1)
VOHdc=0.8xDDRVDE 0.6 1.0 1.1 RZQ/7 1)
40
RON40pd
VOLdc=0.2xDDRVDE 0.6 1.0 1.1 RZQ/6 1)
VOMdc=0.5xDDRVDE 0.9 1.0 1.1 RZQ/6 1)
VOHdc=0.8xDDRVDE 0.9 1.0 1.4 RZQ/6 1)
RON40pu
VOLdc=0.2xDDRVDE 0.9 1.0 1.4 RZQ/6 1)
VOMdc=0.5xDDRVDE 0.9 1.0 1.1 RZQ/6 1)
VOHdc=0.8xDDRVDE 0.6 1.0 1.1 RZQ/6 1)
48
RON48pd
VOLdc=0.2xDDRVDE 0.6 1.0 1.1 RZQ/5 1)
VOMdc=0.5xDDRVDE 0.9 1.0 1.1 RZQ/5 1)
VOHdc=0.8xDDRVDE 0.9 1.0 1.4 RZQ/5 1)
RON48pu
VOLdc=0.2xDDRVDE 0.9 1.0 1.4 RZQ/5 1)
VOMdc=0.5xDDRVDE 0.9 1.0 1.1 RZQ/5 1)
VOHdc=0.8xDDRVDE 0.6 1.0 1.1 RZQ/5 1)
60
RON60pd
VOLdc=0.2xDDRVDE 0.6 1.0 1.1 RZQ/4 1)
VOMdc=0.5xDDRVDE 0.9 1.0 1.1 RZQ/4 1)
VOHdc=0.8xDDRVDE 0.9 1.0 1.4 RZQ/4 1)
RON60pu
VOLdc=0.2xDDRVDE 0.9 1.0 1.4 RZQ/4 1)
VOMdc=0.5xDDRVDE 0.9 1.0 1.1 RZQ/4 1)
VOHdc=0.8xDDRVDE 0.6 1.0 1.1 RZQ/4 1)
Mismatch between pull-up and pull-down,MMPuPd
VOMdc0.5xDDRVDE
10 - +10 % 1), 2)
1): The tolerance limits are specified after calibration with stable voltage and temperature.2): Mismatch specification between pull-up and pull-down output impedances. Both the RONpu and RONpd are defined by 0.5 x DDRVDE. (See the equation below.)
MMPuPdRONPu RONPd–
RONNom----------------------------------------- 100=
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Figure 2.8. : Output driver DC characteristics definition
Table 2.12. : Output Driver DC Characteristics, assuming RZQ=200Ω by SSTL18 modeRONnom Resistor Vout Min Nom Max Unit Notes
28.6RON28pd VOMdc=0.5xDDRVDE 0.85 1.0 1.15 RZQ/7 1), 2)
RON28pu VOMdc=0.5xDDRVDE 0.85 1.0 1.15 RZQ/7 1), 2)
33.3RON33pd VOMdc=0.5xDDRVDE 0.85 1.0 1.15 RZQ/6 1), 2)
RON33pu VOMdc=0.5xDDRVDE 0.85 1.0 1.15 RZQ/6 1), 2)
40RON40pd VOMdc=0.5xDDRVDE 0.85 1.0 1.15 RZQ/5 1), 2)
RON40pu VOMdc=0.5xDDRVDE 0.85 1.0 1.15 RZQ/5 1), 2)
50RON50pd VOMdc=0.5xDDRVDE 0.85 1.0 1.15 RZQ/4 1)
RON50pu VOMdc=0.5xDDRVDE 0.85 1.0 1.15 RZQ/4 1)
Mismatch between pull-up and pull-down,MMPuPd
VOMdc0.5xDDRVDE
-15 - +15 % 1), 2)
1): The tolerance limits are specified after calibration with stable voltage and temperature.2): Mismatch specification between pull-up and pull-down output impedances. Both the RONpu and RONpd are defined by 0.5 x DDRVDE. (See the equation below.)
under the condition that RONPd is turned Off under the condition that RONPu is turned Off
MMPuPdRONPu RONPd–
RONNom------------------------------------------- 100=
RONPuDDRVDE VOut–
IOut-------------------------------------------= RONPd
VOutIOut------------=
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Table 2.13. : ODT DC Characteristics, assuming RZQ=240Ω by SSTL15 modeRTT Resistor Vout Min Nom Max Unit Notes
120
RTT120pd240
VOLdc=0.2xDDRVDE 0.6 1.0 1.1 RZQ 1)
0.5xDDRVDE 0.9 1.0 1.1 RZQ 1)
VOHdc=0.8xDDRVDE 0.9 1.0 1.4 RZQ 1)
RTT120pu240
VOLdc=0.2xDDRVDE 0.9 1.0 1.4 RZQ 1)
0.5xDDRVDE 0.9 1.0 1.1 RZQ 1)
VOHdc=0.8xDDRVDE 0.6 1.0 1.1 RZQ 1)
RTT120 VIL(ac) to VIH(ac) 0.9 1.0 1.6 RZQ/2 1), 2)
60
RTT60pd120
VOLdc=0.2xDDRVDE 0.6 1.0 1.1 RZQ/2 1)
0.5xDDRVDE 0.9 1.0 1.1 RZQ/2 1)
VOHdc=0.8xDDRVDE 0.9 1.0 1.4 RZQ/2 1)
RTT60pu120
VOLdc=0.2xDDRVDE 0.9 1.0 1.4 RZQ/2 1)
0.5xDDRVDE 0.9 1.0 1.1 RZQ/2 1)
VOHdc=0.8xDDRVDE 0.6 1.0 1.1 RZQ/2 1)
RTT60 VIL(ac) to VIH(ac) 0.9 1.0 1.6 RZQ/4 1)
40
RTT40pd80
VOLdc=0.2xDDRVDE 0.6 1.0 1.1 RZQ/3 1)
0.5xDDRVDE 0.9 1.0 1.1 RZQ/3 1)
VOHdc=0.8xDDRVDE 0.9 1.0 1.4 RZQ/3 1)
RTT40pu80
VOLdc=0.2xDDRVDE 0.9 1.0 1.4 RZQ/3 1)
0.5xDDRVDE 0.9 1.0 1.1 RZQ/3 1)
VOHdc=0.8xDDRVDE 0.6 1.0 1.1 RZQ/3 1)
RTT40 VIL(ac) to VIH(ac) 0.9 1.0 1.6 RZQ/6 1)
Deviation of VM w.r.t VDE/2, DVM 7 - +7 % 1), 3)1) Defined as the specification after calibration under stable voltage and temperature.
2) Definition of RTT measurement.
3) VM definition. In the DRAM specification, it is specified as ±5%. However, for the SSTL15 I/O buffers, it is specified as ±7%. The values are calculated from the intermediate voltage (VM) when the ODT impedances of the test pins without load are balanced.
RTTVIH ac VIL ac –
I VIH ac I VIL ac –-------------------------------------------------------=
VM2 VMDDRVDE------------------------- 1– 100=
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Figure 2.9. : ODT DC Characteristics Definition
Table 2.14. : ODT DC Characteristics, assuming RZQ=200Ω by SSTL18 modeRTT Resistors Yout Min Nom Max Unit Notes
100
RTT100pd200 0.5xDDRVDE 0.85 1.0 1.15 RZQ 1)
RTT100pu200 0.5xDDRVDE 0.85 1.0 1.15 RZQ 1)
RTT100 VIL(ac) to VIH(ac) 0.80 1.0 1.2 RZQ/2 1),2)
50
RTT50pd100 0.5xDDRVDE 0.85 1.0 1.15 RZQ/2 1)
RTT50pu100 0.5xDDRVDE 0.85 1.0 1.15 RZQ/2 1)
RTT50 VIL(ac) to VIH(ac) 0.80 1.0 1.2 RZQ/4 1),2)
Deviation of VM w.r.t VDE/2, DVM 6 - +6 % 1),3)1) Defined as the specification after calibration under stable voltage and temperature. 2) Definition of RTT measurement.
3) VM definition. In the DRAM specification, it is specified as ±6%. And, for the SSTL15 I/O buffers, it is specified as ±6%. The values are calculated from the intermediate voltage (VM) when the ODT impedances of the test pins without load are balanced.
under the condition that RTTPd is turned Off under the condition that RTTPu is turned Off
RTTVIH ac VIL ac –
I VIH ac I VIL ac –-------------------------------------------------------=
VM2 VMDDRVDE------------------------- 1– 100=
RTTPuDDRVDE VOut–
IOut-------------------------------------------= RTTPd
VOutIOut------------=
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2.4.3. ADC I/O
In case after the power down is released, follow resumption time.
Table 2.15. : Recommended operating conditions
Parameter Symbol Pin NameSpecification
UnitsMin Typ Max
Power Supply VoltageVvd VDD 1.10 1.20 1.30 V
Vavd AD_AVD 2.70 3.00 3.60 V
Reference Voltage(H) Vrh AD_VRH0, AD_VRH1 Vavd 0.05 - Vavd V
Reference Voltage(L) Vrl AD_VRL0, AD_VRL1 Vss 1) - Vss+0.05 V
Decoupling Capacitor Cref 2), 5) AD_VR0, AD_VR1 0.1 - - uF
Analog Input Voltage Vin AD_VIN0, AD_VIN1 Vrl - Vrh V
Analog Input Frequency Fvin AD_VIN0, AD_VIN1 0 - Fs/2 Hz
Conversion Rate Fs 3) STC - - 500.0 KS/s
Clock Frequency Fc 3) CLK 8M 4) - 10M Hz
Number of Sampling Clock Ns 3) CLK 2 - - -
Number of Conversion Clock Nc 3) CLK 14 - - -
Junction Temperature Tj - 40 - 125 C1) VSS = AD_AVS (Analog GND)
2) A/D outputs incorrect result at the instant following power on or at the resumption from power-down mode.3) FC = FS x (NS+NC) The conversion rate is dependent on output impedance drive the VIN. Choose the FC or NS to satisfy the expression [ Sampling time > t A ] There are two types of timing that sampling starts: soon after conversion ends and soon after up of STC. Sampling ends soon after the first up of CLK after the down of STC. Rimp is output impedance of the driver drives VIN. To put the error of the sampled analog input in 0.5LSB or less, the relation between t A and Rimp is shown in the figure below.4) Except for convert period, these signals can be specified DC signal.5) Resumption Time has a relationship with the capacity value of external capacity.
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Table 2.16. : ADC characteristic
Parameter Symbol Pin Name ConditionsSpecification
UnitsMin Typ Max
Resolution BIT - - - 12 Bits
Supply Current
IVD VDD - - 0.1 mA
IAVD AD_AVD VRH=AVDH VRL=AVS 1.0 1.6 mA
IDS VDD,AD_AVD XPD="0" 0 - 60 uA
Input Leak Current IVINonAD_VIN0, AD_VIN1 Selected VIN 1.2 - 0.6 uA
Reference Voltage(M) VR AD_VR0, AD_VR1 VIN="Vavd/2" 2.0 (Vrh+Vrl)/2 2.0 V%
Reference Resistance RR
AD_VRH0, AD_VRH1, AD_VRL0, AD_VRL1
Between VRH and VRL
4.1 6.6 10.2 Kohm
Zero Transition Voltage 6) VZT - Between 0 and 1 Typ-20Vrl+(Vrh-Vrl)/
4096Typ+20 mV
Full Scale Transition Voltage 6)
VFST -Between 4094 and 4095 Typ-20
Vrh-(Vrh-Vrl)/4096
Typ+20 mV
Integral Non Linearity 7) INL - End point method 4 - 4 LSB
Differential Non Linearity 7)
DNL - End point method 4 - 4 LSB
6) VZT and VFST are dependent on chip LAYOUT and wiring resistance. VZT and VFST are dependent on output impedance of the driver drives VIN (Rimp). The relation between VZT / VFST and Rimp is shown in Table 2.17 .7) 1LSB=(VFSTVZT)/4094, INLn=(Vn(1LSB×(n1)+VZT))/1LSB, DNLn=(Vn+1Vn)/1LSB1 INL is dependent on output impedance of the driver drives VIN (Rimp). The relation between INL and Rimp is shown in Table 2.18 .
Table 2.17. : Relation between VZT/VFST and RimpRimp(ohm) VZT VFST
Min Typ Max Min Typ Max
1000 Typ20 VRL+(VRHVRL)/4096 Typ+20 Typ20 VRH(VRHVRL)/4096 Typ+20
10000 Typ30 VRL+(VRHVRL)/4096 Typ+20 Typ20 VRH(VRHVRL)/4096 Typ+25
100000 Typ100 VRL+(VRHVRL)/4096 Typ+20 Typ20 VRH(VRHVRL)/4096 Typ+50
Table 2.18. : Relation between INL and Rimp
Rimp(ohm) INL
Min Typ Max
1000 5 - 5
10000 8 - 8
100000 38 - 38
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2.4.4. SSCG I/O
These Recommended SSCG PLL Operation Conditions are settled to guarantee correct operation of SSCG PLL.SSCG PLL Spec (Table 2.20 ) is guaranteed under the recommended PLL operation conditions.
Table 2.19. : Recommended operating conditionsParameter Symbol Conditions Min Typ Max Unit
Power voltage V - 1.1 1.2 1.3 V
Junction temperature Tj - 40 25 125 C
Reference clock frequency FrefMB86R11F 20 - 50
MHzMB86R12/13 10 - 50
Input clock rise time tr - - - 0.4 ns
Input clock fall time tf - - - 0.4 ns
Input clock pulse widthThigh High pulse 1.5 - - ns
Tlow Low pulse 1.5 - - ns
Reset enable time Treset - 3 - - us
Table 2.20. : SSCG characteristic
Parameter SymbolSpecification
UnitMin Typ Max
1 Lock-up Time TL - 200 us
2 Current Consumption Iavd - 2 4 mA
3 Stand-by Current Ioff_avd - 3 500 uA
4 Output frequency Fcore 400 - 1600 MHz
5 VCO Output frequency Fout 800 - 1600 MHz
6 Modulation rate Om 0.5 51) %
7 Modulation frequency Fmod Fref/4096 Fref/10242) HzNote:
The values are specified under the condition that Power Supply has no noise. In this PLL, VCO does not oscillate free-running. The output frequency of SSCG PLL becomes 0Hz when input clock CK is
assumed to be 0Hz. Moreover, SSCG PLL operation at this time (CK=0Hz) is not guaranteed
1) Depends on multiples.
2) Depends on Input frequency
Multiple MAX modulation rate8 120 1%8 96 2%8 62 3%8 46 4%8 36 5%
Fref MAX modulation frequency10 25MHz Fref /1024
25 50MHz Fref /2048
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2.4.4.1. PLL Clock Jitter
PLL clock jitter is calculated by the following formula.Please confirm the permissible input jitter of the outer module to its manufacturer.
(1) Modulation Off * CRG_P or SSCGCTL.SSEN=0 (CCNT Register)
f:PLL frequencyn:divide(1-a) CRPLC.PSMODE=1 (CRG Register)
Jitter=0.03*sqrt(n)/f [sec](1-b) CRPLC.PSMODE=0 (CRG Register) Jitter=0.05*sqrt(n)/f [sec]
(2) Modulation On * SSCGCTL.SSEN=1(CCNT Register)f:PLL frequencyn:divide
(2-a) CRPLC.PSMODE=1(CRG Register) Jitter=0.03*n/f [sec]
(2-b) CRPLC.PSMODE=0(CRG Register) Jitter=0.05*n/f [sec]
Example: SSCGCTL.SSEN=1(Modulation On)
CRPLC.PSMODE=1 Modulation rate 0.5% PLL frequency 1600MHz
Calculation CLK0(400MHz) Jitter Jitter=0.03*4/(1600*10^6)=75*10^(-12)=75[ps]
Modulation=12.5[ps] 0.5% of 400MHz Jitter'=Modulattion+Jitter=12.5[ps]+75[ps]=87.5[ps]
2.4.4.2. Difference permission level of crystal (MB86R11F)
Make the difference between CLKX0 and CLKX1 less than 100ps.
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2.4.5. I2C Bus Fast Mode I/O
Note: An external pin in the I2C IO buffer is as follows. I2C0_SCLI2C0_SDAI2C1_SCLI2C1_SDA
Table 2.21. : I2C I/O direct current characteristic
Parameter & Condition SymbolStandard Mode Fast Mode(*1) Unit
Min Max Min Max
"L" level input voltage VIL 0.5 0.3 VDDE 0.5 0.3 VDDE V
"H" level input voltage VIH 0.7 VDDE 2) 0.7 VDDE 2) V
Schmitt trigger hysteresisVDDE > 2[v]
Vhys n/a n/a 0.05 VDDE - V
"L" level output voltageSink current 3[mA]VDDE > 2[V]
VOL1 0 0.4 0 0.4 V
Output slew rate (Tfall)
Bus capacitance 10[pF] ~ 400[pF]VIH (min.) to VIL (max.)
tof - 250 20 + 0.1Cb 3) 250 ns
Data line leakageInput voltage 0.1 ~ 0.9 VDDE (max.)
Ii 10 10 -10 10 A
I/O pin capacitance Ci - 10 - 10 pF1) This I2C Bus Fast Mode I/O buffer is downward compatible with Standard Mode. 2) 65nm technology: Complies with the maximum ratings 4[V]. 3) Cb: Capacitance of one bus line [pF)]4) The I2C Bus Fast Mode I/O Buffer itself has no function to prevent a spike of 50ns pulse width (max).
Therefore, provide any input filter to prevent a spike for both internal or external semiconductor device.
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2.4.5.1. I2C IO V-I Characteristic Chart
Figure 2.10. : I2C V-I characteristic chart
2.4.6. RSDS I/O
Table 2.22 shows the standard RSDS I/O characteristics valid only for Differential ModeFor Non-Differential Mode, refer to Table 2.10 Standard CMOS I/O DC characteristics.
Table 2.22. : Standard RSDS I/O characteristics
ParameterTarget
Units CommentsMin Typ Max
Output differential voltage amplitude, RSDS mode (Vd)
MB86R11F 100 200 600mV 1. BOOST0=1, RL=50Ω2. BOOST0=0, RL=100ΩMB86R12/13 100 200 300
Output common voltage, RSDS mode (Vcm)
MB86R11F 0.5 1.2 1.5V Some RSDS receivers require Vcm
2.4.7. USB I/O
Table 2.23. : Recommended operating conditions (High-speed)
Parameter SymbolValue
UnitMin Typ Max
Input levels for high-speed:
high-speed squelch detection threshold(differential signal amplitude)
VHSSQ 100 - 200 mV
High-speed disconnect detection threshold(differential signal amplitude)
VHSDSC 525 - 625 mV
High-speed differential input signaling levels (this spec is based on "Template 6")
150 (absolute value)
- - mV
High-speed data signaling common mode volt-age range (guideline for receiver) VHSCM -50 - 500 mV
Output levels for high-speed:
High-speed idle level VHSOI -10.0 - 10.0 mV
High-speed data signaling high VHSOH 360 - 440 mV
High-speed data signaling low VHSOL -10.0 - 10.0 mV
Chirp J level (differential voltage) VCHIRPJ 700 - 1100 mV
Chirp K level (differential voltage) VCHIRPK -900 - -500 mV
Terminations in high-speed:
Termination voltage in high-speed VHSTERM -10 - 10 mV
Table 2.24. : Recommended operating conditions (Full-speed/Low-speed)
Parameter SymbolValue
UnitMin Typ Max
Input levels for full-speed/low-speed:
High (driving) VIH 2.0 - - V
High (floating) VIHZ 2.7 - 3.6 V
Low VIL - - 0.8 V
Differential input sensitivity VDI 0.2 - - V
Differential common mode range VCM 0.8 - 2.5 V
Output levels for full-speed/low-speed:
Low VOL 0.0 - 0.3 V
High (driven) VOH 2.8 - 3.6 V
SE1 VOSE1 0.8 - - V
Output signal crossover voltage VCRS 1.3 - 2.0 V
Input capacitance for full-speed/low-speed:
Downstream facing port (being shared with upstream facing port at device mode, so the less value is selected as the maximum spec)
CIND(CINUB)
- - 100 pF
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Transceiver edge rate control capacitance CEDGE - - 75 pF
Terminations in full-speed/low-speed:
Bus pull-up resistor on upstream port (idle bus) (this is used only in the device mode (HOST-MODE = "0" setting).)
RPUI 0.9 - 1.575 kΩ
Bus pull-up resistor on upstream port (upstream port receiving) (this is used only in the device mode (HOSTMODE = "0" setting).)
RPUA 1.425 - 3.090 kΩ
Input impedance exclusive of pull-up/pull-down ZINP 300 - - kΩ
Termination voltage on upstream port pull-up VTERM 3.0 - 3.6 V
Table 2.24. : Recommended operating conditions (Full-speed/Low-speed)
Parameter SymbolValue
UnitMin Typ Max
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2.5. AC Characteristics
This chapter explains the AC timing of external terminals.
2.5.1. External Bus Controller Signal Timing
Table 2.25. : Memory controller signal timing
Signal Name Symbol DescriptionValue
UnitMin Typ Max
MB86R11F: MEM_XCS[0,1,2]MB86R12/13:MEM_XCS[0,2,4]
Tcso Chip Select delay time - - 13 ns
MEM_EA[26:1] Tao Address delay time - - 13 ns
MEM_ED[31:0]
Tdo Data output delay time - - 13 ns
Tdoz Data output HiZ time - - 13 ns
Tdsr SRAM/NOR Flash data setup time 13.5 - - ns
Tdhr SRAM/NOR Flash data hold time 0 - - ns
Tdsp NOR Flash page Read data setup time 13.5 - - ns
Tdhp NOR Flash page Read data hold time 0 - - ns
MEM_RDY Tdri RDY delay time 0.5 - - ns
MEM_XRD Trdo XRD delay time - - 13 ns
MEM_XWR[3:0] Twro XWR delay time - - 13 nsOutput Delay's standard clock is an internal clock. A standard clock of MEM_RDY is an internal clock. TRACC: Timing Register[3:0].RACC[3:0]TRADC: Timing Register[7:4].RADC[3:0]TWADC: Timing Register[23:20].WADC[3:0]
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Figure 2.11. : SRAM/NOR Flash Read
Figure 2.12. : SRAM/NOR Flash Write
MEM_CLK(AHBCLK)
MEM_XCS 0,1,2
MEM_EA[26:1]
MEM_XRD
MEM_ED[31:1]
Tcso
Tao
Twro
Tdo Tdoz
X
MEM_XCS0,1,2
MEM_CLK(AHBCLK)
MEM_EA[26:1]
MEM_XWR[1:0]
MEM_ED[31:0]
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Figure 2.13. : Low speed device Read
Figure 2.14. : Low speed device Write
Tcso
Tao
2Cycle
Trdo
Tao
Tcso
TdhrTdsr
Trdo
Trdi
TRADC + T rdo
MEM_CLK(AHBCLK)
MEM_XCS 0,1,2
MEM_EA[26:1]
MEM_RDY
MRDY(internal signal)
MEM_XRD
MEM_ED[31:0]
TRADC + T CSO
Tdo Tdo Tdo
X
Tcso
Tao
2Cycle
Tao
Tcso
Trdi
TWADC + TWRO
MEM_CLK(AHBCLK)
MEM_XCS 0,1,2
MEM_EA[26:1]
MEM_RDY
MEMRDY(internal signal)
MEM_WXR[1:0]
MEM_ED[31:0]
TWRO TWRO
TWADC + TCSO
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Figure 2.15. : NOR Flash Page Read
MEM_ED[31:0]
Tdsp Tdhp
MEM_CLK(AHBCLK)
MEM_XCS0,1,2
MEM_EA[26:1]
Tcso
Tao
MEM_RDY
Tao
Tcso
Trdo
MEM_XRD
Tao
Tdsp Tdhp
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2.5.2. DDR Controller Signal Timing
Table 2.26. : DDR Controller(DDR3-1066) signal timing by SSTL15 mode
Signal Name Symbol DescriptionValue
UnitMin Max
MA*MBA*,MCKE,MODT, MXCAS,MXCS,MXRAS,MXWE
tphy_IS_CA Control and Address setup time - 737 ps
tphy_IH_CA Control and Address hold time - 410 ps
MDQS0,MXDQS0
tphy_CKDQS_min DQS output access time from CLK 474 - ps
tphy_CKDQS_max DQS output access time from CLK - 284 ps
tphy_RTT_Gate_min Round Trip time from CLK out to Read DQS 240 - ps
tphy_RTT_Gate_max Round Trip time from CLK out to Read DQS - 955 ps
MDQS1,MXDQS1
tphy_CKDQS_min DQS output access time from CLK 468 - ps
tphy_CKDQS_max DQS output access time from CLK - 288 ps
tphy_RTT_Gate_min Round Trip time from CLK out to Read DQS 244 - ps
tphy_RTT_Gate_max Round Trip time from CLK out to Read DQS - 956 ps
MDQS2,MXDQS2
tphy_CKDQS_min DQS output access time from CLK 311 - ps
tphy_CKDQS_max DQS output access time from CLK - 440 ps
tphy_RTT_Gate_min Round Trip time from CLK out to Read DQS 364 - ps
tphy_RTT_Gate_max Round Trip time from CLK out to Read DQS - 1092 ps
MDQS3,MXDQS3
tphy_CKDQS_min DQS output access time from CLK 316 - ps
tphy_CKDQS_max DQS output access time from CLK - 434 ps
tphy_RTT_Gate_min Round Trip time from CLK out to Read DQS 359 - ps
tphy_RTT_Gate_max Round Trip time from CLK out to Read DQS - 1084 ps
MDQ[7:0], MDM0
tphy_WDS DQ and DM setup time for Write - 306 ps
tphy_WDH DQ and DM hold time for Write - 313 ps
tphy_RDS DQ and DM setup time for Read - 278 ps
tphy_RDH DQ and DM hold time for Read 622 - ps
MDQ[15:8], MDM1
tphy_WDS DQ and DM setup time for Write - 306 ps
tphy_WDH DQ and DM hold time for Write - 312 ps
tphy_RDS DQ and DM setup time for Read - 278 ps
tphy_RDH DQ and DM hold time for Read 622 - ps
MDQ[23:16], MDM2
tphy_WDS DQ and DM setup time for Write - 306 ps
tphy_WDH DQ and DM hold time for Write - 313 ps
tphy_RDS DQ and DM setup time for Read - 277 ps
tphy_RDH DQ and DM hold time for Read 621 - ps
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MDQ[31:24], MDM3
tphy_WDS DQ and DM setup time for Write - 306 ps
tphy_WDH DQ and DM hold time for Write - 310 ps
tphy_RDS DQ and DM setup time for Read - 278 ps
tphy_RDH DQ and DM hold time for Read 623 - ps
MDQS0,MXDQS0
t_phy_RTT_FIFO_min Round Trip time from CLK out to Read DQS for Read data synchronizer 246 - ps
t_phy_RTT_FIFO_max Round Trip time from CLK out to Read DQS for Read data synchronizer - 1831 ps
MDQS1,MXDQS1
t_phy_RTT_FIFO_min Round Trip time from CLK out to Read DQS for Read data synchronizer 245 - ps
t_phy_RTT_FIFO_max Round Trip time from CLK out to Read DQS for Read data synchronizer - 1837 ps
MDQS2,MXDQS2
t_phy_RTT_FIFO_min Round Trip time from CLK out to Read DQS for Read data synchronizer 266 - ps
t_phy_RTT_FIFO_max Round Trip time from CLK out to Read DQS for Read data synchronizer - 1790 ps
MDQS3,MXDQS3
t_phy_RTT_FIFO_min Round Trip time from CLK out to Read DQS for Read data synchronizer 262 - ps
t_phy_RTT_FIFO_max Round Trip time from CLK out to Read DQS for Read data synchronizer - 1809 ps
Table 2.27. : DDR Controller(DDR3-800) signal timing by SSTL15 mode
Signal Name Symbol DescriptionValue
UnitMin Max
MA*MBA*,MCKE,MODT, MXCAS,MXCS,MXRAS,MXWE
tphy_IS_CA Control and Address setup time - 1034 ps
tphy_IH_CA Control and Address hold time - 714 ps
MDQS0,MXDQS0
tphy_CKDQS_min DQS output access time from CLK 501 - ps
tphy_CKDQS_max DQS output access time from CLK - 311 ps
tphy_RTT_Gate_min Round Trip time from CLK out to Read DQS 36 - ps
tphy_RTT_Gate_max Round Trip time from CLK out to Read DQS - 1250 ps
MDQS1,MXDQS1
tphy_CKDQS_min DQS output access time from CLK 495 - ps
tphy_CKDQS_max DQS output access time from CLK - 315 ps
tphy_RTT_Gate_min Round Trip time from CLK out to Read DQS 32 - ps
tphy_RTT_Gate_max Round Trip time from CLK out to Read DQS - 1251 ps
Table 2.26. : DDR Controller(DDR3-1066) signal timing by SSTL15 mode (Continued)
Signal Name Symbol DescriptionValue
UnitMin Max
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MDQS2,MXDQS2
tphy_CKDQS_min DQS output access time from CLK 348 - ps
tphy_CKDQS_max DQS output access time from CLK - 457 ps
tphy_RTT_Gate_min Round Trip time from CLK out to Read DQS 69 - ps
tphy_RTT_Gate_max Round Trip time from CLK out to Read DQS - 1367 ps
MDQS3,MXDQS3
tphy_CKDQS_min DQS output access time from CLK 363 - ps
tphy_CKDQS_max DQS output access time from CLK - 441 ps
tphy_RTT_Gate_min Round Trip time from CLK out to Read DQS 93 - ps
tphy_RTT_Gate_max Round Trip time from CLK out to Read DQS - 1388 ps
MDQ[7:0], MDM0
tphy_WDS DQ and DM setup time for Write - 448 ps
tphy_WDH DQ and DM hold time for Write - 471 ps
tphy_RDS DQ and DM setup time for Read - 420 ps
tphy_RDH DQ and DM hold time for Read 776 - ps
MDQ[15:8], MDM1
tphy_WDS DQ and DM setup time for Write - 447 ps
tphy_WDH DQ and DM hold time for Write - 471 ps
tphy_RDS DQ and DM setup time for Read - 420 ps
tphy_RDH DQ and DM hold time for Read 776 - ps
MDQ[23:16], MDM2
tphy_WDS DQ and DM setup time for Write - 448 ps
tphy_WDH DQ and DM hold time for Write - 471 ps
tphy_RDS DQ and DM setup time for Read - 419 ps
tphy_RDH DQ and DM hold time for Read 776 - ps
MDQ[31:24], MDM3
tphy_WDS DQ and DM setup time for Write - 448 ps
tphy_WDH DQ and DM hold time for Write - 469 ps
tphy_RDS DQ and DM setup time for Read - 420 ps
tphy_RDH DQ and DM hold time for Read 778 - ps
MDQS0,MXDQS0
t_phy_RTT_FIFO_min Round Trip time from CLK out to Read DQS for Read data synchronizer 1308 - ps
t_phy_RTT_FIFO_max Round Trip time from CLK out to Read DQS for Read data synchronizer - 1975 ps
MDQS1,MXDQS1
t_phy_RTT_FIFO_min Round Trip time from CLK out to Read DQS for Read data synchronizer 1307 - ps
t_phy_RTT_FIFO_max Round Trip time from CLK out to Read DQS for Read data synchronizer - 1981 ps
MDQS2,MXDQS2
t_phy_RTT_FIFO_min Round Trip time from CLK out to Read DQS for Read data synchronizer 1328 - ps
t_phy_RTT_FIFO_max Round Trip time from CLK out to Read DQS fo