Date post: | 02-Nov-2015 |
Category: |
Documents |
Upload: | tony-rodrigues |
View: | 5 times |
Download: | 0 times |
P1203BVN-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)
THERMAL RESISTANCE RATINGS
UNITS
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed
A
mJ
30
40
28
SYMBOL
ID
IDM
1
2.5W
THERMAL RESISTANCE
RqJC
TYPICAL
UNITS
40
7
11
20
Continuous Drain Current2
VGS
VDS
LIMITS
V
TA = 25 C
Operating Junction & Storage Temperature Range
TA = 100 CPower Dissipation
Junction-to-Ambient
MAXIMUM
RDS(ON)
TA = 100 C
PARAMETERS/TEST CONDITIONS
Drain-Source Voltage
Gate-Source Voltage
ID
12m @VGS = 10V 11A
Avalanche Energy L = 0.1mH
Pulsed Drain Current1 , 2
TA = 25 C
Avalanche Current
30V
C-55 to 150
50
IAS
EAS
SYMBOL
PD
TJ, TSTG
Junction-to-Case 25
RqJAC / W
Ver 1.0 1 2012/4/13
http://www.DataSheet4U.net/
datasheet pdf - http://www.DataSheet4U.net/
P1203BVN-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 C, Unless Otherwise Noted)
MIN TYP MAX
30
1 1.8 3
100 nA
1
10
70 A
14 17.5
8.5 12
40 S
846
225
126
1.65
17
2.7
4
9
40
20
6
1.9 A
1.3 V
21 nS
10 nC1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
VGS = 0V, VDS = 0V, f = 1MHz
Zero Gate Voltage Drain Current
Forward Transconductance1 gfs VDS = 5V, ID = 10A
DYNAMIC
Input Capacitance Ciss
mAIDSSVDS = 20V, VGS = 0V , TJ = 125 C
VGS = 0V, VDS = 20V, f = 1MHz pF
m
Output Capacitance Coss
VDS = VGS, ID = 250mA
VDS = 0V, VGS = 20V
STATIC
Gate-Body Leakage
Gate Threshold Voltage
IGSS
VGS = 0V, ID = 250mAV(BR)DSS
VDS = 24V, VGS = 0V
TEST CONDITIONS
V
LIMITSUNIT
Drain-Source Breakdown Voltage
VGS(th)
Reverse Transfer Capacitance Crss
Total Gate Charge2 Qg
PARAMETER SYMBOL
Gate Resistance Rg
On-State Drain Current1 ID(ON)
VDS = 0.5V(BR)DSS,
ID = 8.8A, VGS = 10VnCGate-Source Charge
2 Qgs
Gate-Drain Charge2 Qgd
VDD = 15V, ID = 12.5A, VGS = 10V,
RG=6nS
Rise Time2 tr
Turn-Off Delay Time2 td(off)
Fall Time2 tf
Reverse Recovery Time trrIF = 11 A, dlF/dt = 100A / mS
Reverse Recovery Charge Qrr
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 C)
Continuous Current IS
VDS = 10V, VGS = 10V
Drain-Source On-State
Resistance1
VGS = 10V, ID = 11ARDS(ON)
VGS = 4.5V, ID = 11A
Forward Voltage1 VSD IF = 25A, VGS = 0V
Turn-On Delay Time2 td(on)
Ver 1.0 2 2012/4/13
http://www.DataSheet4U.net/
datasheet pdf - http://www.DataSheet4U.net/
P1203BVN-Channel Enhancement Mode MOSFET
Ver 1.0 3 2012/4/13
http://www.DataSheet4U.net/
datasheet pdf - http://www.DataSheet4U.net/
P1203BVN-Channel Enhancement Mode MOSFET
Ver 1.0 4 2012/4/13
http://www.DataSheet4U.net/
datasheet pdf - http://www.DataSheet4U.net/
P1203BVN-Channel Enhancement Mode MOSFET
Ver 1.0 5 2012/4/13
http://www.DataSheet4U.net/
datasheet pdf - http://www.DataSheet4U.net/