Date post: | 21-Nov-2014 |
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SHINDENGEN
2SJ374
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
( F20F6P )
-60V -20A
OUTLINE DIMENSIONS
(Unit : mm)
RATINGS
60V Series Power MOSFET P-Channel Enhancement type
Case : FTO-220
DC/DC converters Non-Isolated DC-DC Converter Power management Motor & Solenoid Drive of Office Equipment Mobile Gear
APPLICATION
VGS= 4V drive Built-in ZD for Gate Protection Avalanche resistance guaranteed
FEATURES
Absolute Maximum Ratings (Tc = 25)Item Symbol Conditions Ratings Unit
Storage Temperature Tstg -55~150 Channel Temperature Tch 150Drain-Source Voltage VDSS -60 VGate-Source Voltage VGSS ±20Continuous Drain Current(DC) ID -20Continuous Drain Current(Peak) IDP Pulse width≦10μs, Duty cycle≦1/100 -80 AContinuous Source Current(DC) IS -20Total Power Dissipation PT 50 WSingle Avalanche Current IAS Tch = 25 -20 ADielectric Strength Vdis Terminals to case, AC 1 minute 2 kVMounting Torque TOR ( Recommended torque :0.3 N・m ) 0.5 N・m
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
2SJ374 ( F20F6P )60V Series Power MOSFET
Electrical Characteristics Tc = 25
Item Symbol Conditions Min. Typ. Max. Unit
Drain-Source Breakdown Voltage V(BR)DSS ID = -1mA, VGS = 0V -60 VZero Gate Voltage Drain Current IDSS VDS = -60V, VGS = 0V -100 μAGate-Source Leakage Current IGSS VGS = ±20V, VDS = 0V ±10Forward Transconductance gfs ID = -10A, VDS = -10V 10 14 SStatic Drain-Source On-state Resistance RDS(ON) ID = -10A, VGS = -10V 0.05 0.07 ΩGate Threshold Voltage VTH ID = -1mA, VDS = -10V -1.0 -1.5 -2.0 VSource-Drain Diode Forward Voltage VSD IS = -10A, VGS = 0V -1.5Thermal Resistance θjc junction to case 2.50 /WTotal Gate Charge Qg VDD = -48V, VGS = -10V, ID = -20A -87 nCInput Capacitance Ciss 2050Reverse Transfer Capacitance Crss VDS = -10V, VGS = 0V, f = 1MHZ 520 pFOutput Capacitance Coss 1050Turn-On Time ton ID = -10A, RL = 3Ω, VGS = -10V 160 320 nsTurn-Off Time toff 700 1400
-40
-35
-30
-25
-20
-15
-10
-5
0-10-8-6-4-20
2SJ374 Transfer Characteristics
VDS = −5Vpulse testTYP
Tc = −55°C
25°C
100°C
150°C
Gate-Source Voltage VGS [V]
Dra
in C
urr
ent
ID
[A]
Static Drain-Source On-state Resistance
10
100
1000
-50 0 50 100 150
2SJ374
VGS = −10Vpulse testTYP
ID = −10A
Case Temperature Tc [°C]
Sta
tic D
rain
-Sou
rce
On-
stat
e R
esis
tanc
e R
DS
(ON
) [m
Ω]
Gate Threshold Voltage
-2.5
-2
-1.5
-1
-0.5
0-50 0 50 100 150
2SJ374
VDS = −10VID = −1mATYP
Case Temperature Tc [°C]
Gat
e T
hres
hold
Vol
tage
V
TH [
V]
Safe Operating Area
-0.1
-1
-10
-100
-1 -10 -100
2SJ374
100µs
Tc = 25°CSingle Pulse
200µs
1ms
10ms
DC
10µs
Drain-Source Voltage VDS [V]
Dra
in C
urre
nt
I D [
A]
RDS(ON)limit
0.0
1
0.11
10
10
0
2S
J374
10-
51
0-4
10-
31
0-2
10-
11
001
011
02
Tra
nsi
ent
Therm
al
Impedance
Tim
e
t [
s]
Transient Thermal Impedance θjc(t) [°C/W]
Capacitance
10
100
1000
10000
-50-40-30-20-100
2SJ374
0.005
Tc=25°CTYP
Ciss
Coss
Crss
Drain-Source Voltage VDS [V]
Cap
acita
nce
Cis
s C
oss
Crs
s [
pF]
0
20
40
60
80
100
0 50 100 150
2SJ374 Power Derating
Pow
er
Dera
ting
[%]
Case Temperature Tc [°C]
-50
-40
-30
-20
-10
0-140-120-100-80-60-40-200
2SJ374
-20
-15
-10
-5
0
−24V
Gate Charge Characteristics
ID = −20A
−12V
VDD = −48V
VGS
VDS
Gate Charge Qg [nC]
Dra
in-S
ourc
e V
olta
ge
VD
S [
V]
Gate
-Sourc
e V
olta
ge
VG
S
[V]