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Differentiating Your Design
with New Performance Levels
using GaN FETs
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Introduction
Andrea Mirenda
V.P. Americas Sales
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Efficient Power Conversion Corporation
• World’s largest supplier of GaN FETs and ICs for Power Conversion
• CEO – Alex Lidow– Co-Invertor of the modern power MOSFET
(HEXFET)– CEO of International Rectifier – 12 years
• Founded EPC in 2007
• eGaN FETs introduced in 2009
• Headquartered in El Segundo, CA
• Privately funded primarily by CEO + 1 Taiwanese partner
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What is GaN-on-Si?
GaN-on-Si is…
EPC’s eGaN® Technology is the undisputed industry leader
• Faster
• Smaller
• More efficient
• Less expensive
• Easier to integrate
…as compared to Silicon
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LiDAR
Vision for self-driving cars,
augmented reality, and UAVs
Computing
Cloud computing, artificial
intelligence and deep learning
Wireless Power
Cut the cord!
Med Tech
Medical diagnostics,
robotics
Emerging Markets Demanding eGaN Technology
eGaN Technology is Changing the World
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Where is GaN Used?
• DC-DC Converters
• Laser Driver for LiDAR
systems
• Wireless Power Transfer
• High Density AC Adapters
• High Precision Motors
•Cellular Base Stations
• Automotive LED Headlights
• Space Applications
• LED Lighting
• Medical Applications
• Class D Audio
Small size and high efficiency at high frequency
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Adoption ChecklistBest performance?
YES
Reliable?
YES – automotive certification and field experience.
Low Cost?
YES – Gen 5 pricing, simpler systems
Availability?
YES – MOSFETs have long lead times, eGaN devices available from stock
Easy to use?
multiple driver ICs available
More qualified engineers in the design pool
Monolithic Half Bridge will eliminate much design and assembly engineering
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• Conferences– APEC, CES, IEEE, PCIM EU/AP, Application Specific
events
• Social Media– Linked In, GaN Talk Blog,
• Mail list for PR, NPI, Events etc• Articles, white papers, Design Tips, Books,
Videos• Digi-Key Supplier Portal
– https://www.digikey.com/en/supplier-centers/e/epc
• EPC You Tube Channel https://www.youtube.com/user/EPCCorporation
Keeping Updated With EPC
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EPC’s Strategy
• Deploy GaN-on-Si for power conversion
• Manufacture products
– using existing silicon infrastructure for low cost
– high quality
– high capacity potential
• Integrate discretes and ICs to improve performance and reduce design cost
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GaN Applications
Brian Miller
Field Applications Engineer
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EPC’s GaN FETs & ICs
• Power FETs and ICs:– Enhancement mode (normally off) FETs
– Like 5V logic: 5V = on, 0V = off
– Range of FETs: 15 V to 350 V, 0.5 to 90 amps
• Extremely low capacitance and inductance
• Zero Reverse Recovery (QRR)
• Reduces system size and cost– Smaller devices
– Higher frequency reduces capacitor, inductor, etc. size
• Enables new products– Such as LiDAR
• Reliable– > 30B device hours in the field
– <0.1 FIT
EPC2036:
• 100 V
• 1.7 A
• 0.9 x 0.9 mm
VCC
IN
Gnd S
D
EPC2112:
Integrated Gate
Driver
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Dielectric
GaN
Si
AlGaN Electron Generating Layer
Aluminum Nitride
Isolation Layer
DGS- - - - - - - - - - - - - - -- - - -
eGaN FET Structure
Two Dimensional
Electron Gas (2DEG)
• Works like a MOSFET
– Positive Gate to Source Voltage turns on bidirectional channel
– Gate shorted to Source blocks from Drain to Source
• Except …. for a given RDS(on)
– Lower Capacitance & inductance
• Reverse Conduction with Zero QRR
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Fundamental Advantage
GaN gives a smaller device with lower RDS(on)– With lower capacitance
• Faster voltage commutation
• Lower loss switching
– Lower inductance• Faster current commutation
• Lower EMI
– Zero QRR
• Lower Switching losses
200 V eGaN FET
(25 mΩ)
200 V Silicon Device
(30 mΩ)
Gen 5
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Die Size Optimization
For a given application and process
Define equations to quantify performance
Apply parametrics to quantify performance
Gen 5
Optimal
Performance
Price (die size for a given process)
Acceptable
Performance
Perf
orm
ance
Gen 4Gen 5
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1 E-04
1 E-03
1 E-02
50 500 5000
RD
S(o
n),
SP
(Ω·c
m2)
Breakdown Voltage (V)
Theoretical Channel Resistance
Why eGaN® FETs?Highest Semiconductor Performance Possible
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Wide Bandgap
GaN is a wide-bandgap material, meaning that GaN is capable of
supporting a much higher electric field intensity than silicon
– For a given voltage, terminations of a GaN Structure can be
much closer together.
GaN = 1/10 SiGaN
Si
Distance electrons need to travel
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Domain of Utility (Power)
MOSFET
IGBT
GaN-on-Silicon SiC
600 V 900 V
1 X
1.5 X
2 – 3X
DC
Curr
ent C
apabili
ty x
Rate
d V
oltage
10,000 V1700 V
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EPC dominates the GaN product landscape at 200 V and under
– about 70% of the power transistor market
Source: Yole Development August 2016
EPC Focus:
High frequency, high performance,
small footprint, larger markets
Others’ Focus:
High voltage – less
performance sensitive, lower
value, smaller markets
EPC Competitive Advantage
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Ultra-Fast Switching
VIN=12-28 V VOUT=3.3 V
IOUT=15 A FS=1 MHz
2 x EPC2015
5 V/ div
Switching Node
Voltage VIN=28 V IOUT=15 A
Little ringing for low EMI
VIN=28 V~3V overshoot @ 15 Aout
20ns
~1.1ns rise time @ 15 A
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Stable over Temperature
0.6
0.7
0.8
0.9
1
1.1
1.2
0 25 50 75 100 125 150
No
rmali
zed
Th
resh
old
Vo
ltag
e
Junction Temperature ( C)
eGaN FET
Si MOSFET
• Gate Threshold stability over temperature
provides precise, consistent switching
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Total Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 10 20 30 40 50 60 70 80
VG
S(V
)
QG (nC)
VGS vs QG
EPC2022 – 100 V, 3.2 mΩ
BSC035N10NS5 – 100 V, 3.5 mΩ
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Gen 5: Higher Performance - 100 V FETs
84
85
86
87
88
89
90
91
92
93
94
95
96
0 2 4 6 8 10 12 14 16 18 20 22 24 26
Eff
icie
nc
y
Output Current (A)
fsw=500 kHz
VIN=48 V VOUT=5 V
EPC2001C Gen 4
BSZ097N10NS5
EPC2045 Gen 5
EPC2045 Generation 5
Comparable RDS(on)
Gen 5 Devices have higher performance and are about half the size of Gen 4.
Both Gen 5 and Gen 4 are far superior to the best available MOSFET
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Part number Vds Rdson Id-A Rthjc Rthjb Rthja Area PackageVolts mohm A deg C/W deg C/W deg C/W Sq. mm
BSC030N08NS5 80 3 100 20 0.9 50 30 PQFN56EPC2021 80 2.5 90 0.4 1.1 42 13.92 LGA
Active GaN Region
Silicon Substrate
Heat Flow Path• Double side cooling device. • RθJC (to the top) is much lower
than RθJB (to board). • more heat removed from
junction through top Si.• with heat sink attached
• Die Perimeter helps in removing the heat from the junction
• Allows device to run cooler• Carry more current
Thermal Paths in eGaN FETs
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Thermal Management for Flip Chip
HEATSINK
RθJc
RθJB
TIM
RθHARθHA
RθTIMRθTIM
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Thermally Efficient
0
0.5
1
1.5
2
2.5
3
0 5 10 15 20 25 30 35
RƟJB,T
herm
al
Resis
tan
ce (°
C/W
)
Device Area (mm2)
RθJB_Si
RθJB_Ga
N
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Dual Sided Cooling
0
0.5
1
1.5
2
2.5
3
0 5 10 15 20 25 30 35
RƟJC, T
herm
al
Res
ista
nc
e (°
C/W
)
Device Area (mm2)
RθJC_Si
RθJC_G
aN
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Q2=80°C
Q1=100°C
IOUT=22 A IOUT=14 A
100°C
25°C
Q1=98°C
Q2=84°C
Fan Speed=200 LFM VIN=48 V VOUT=12 V fsw=300 kHz L=4.7 µH
57% Higher Output Current
eGaN FET Can PAK MOSFET
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DC/DC: 48 V to 12 V
Lower On Resistance
Faster
Less Capacitance
Smaller
Lower Cost
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LiDAR
EPC’s eGaN FETs:
– Fast
– High Current Pulses
– Small
LiDAR
evaluation
board EPC9126
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Brushless DC Motor Drive
• Efficient, high PWM frequency operation with:
• Reduced QGD
• Reduced QOSS
• Zero QRR
• Higher PWM frequency allows reduced motor
inductance.
• Reduced motor inductance allows reduction
in copper and iron size, weight, and cost.
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Wireless Power
Resonant: 6.78 or 13.56 MHz
Amplifier
Impedance
Matching
Network +
Supply Source
Source
CoilRectifier
Device
Coil
Load
Impedance
Matching
Network
Device
EPC’s eGaN FETs:
– Efficient/Cool
– High Power
• 100 W +
– Small
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Audio: Class D Amplifiers
EPC’s eGaN FETs:
– Precise Reproduction of Sound
• Better than most liner amplifiers
– Efficient/Cool
• Often needs no heat sink
– Higher Frequency is Possible
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Automotive Schedule
Product Key SpecDie Size
MmAEC Qual Launch
EPC2202 80V_17mΩ 2.1 x 1.6 2Q18
EPC2203 80V_80mΩ 0.9 x 0.9 2Q18
EPC2206 80V_2.2mΩ, 90A 6.1 x 2.3 Qual done – November launch
EPC2212 100V, 13.5mΩ, 18A 2.1 x 1.6 Qual done – November launch
EPC2214 80V_20mΩ 1.35 x 1.35 March
EPC2208 100V_2.8mΩ 67A 3.5 x 2 LGA March
EPC2201 100V_5.5mΩ 4.1 x 1.6 March
EPC2210 200V_18mΩ 3.6 x 1.6 March
EPC2215 200V_8mΩ, 42A 4.6 x 1.6 LGA March
EPC2204 100V_5mΩ 2.5 x 1.5 LGA March
EPC2207 200V_22mΩ, 13A 2.8 x 0.95 LGA April
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Wafer Level Packaging
Fewer interconnects
Smaller, Simpler
Better Performance
Compatible with small outline, surface mount manufacturing
Source/Gate Clips
Source/Gate Die Attach
MOSFET Die
Drain Die Attach
PCB
PCB Gate
ConnectionPCB Source
Connection
PCB Drain
Connection
GateSource
Drain Pad
MOSFET
eGaN FET Die
Drain/Source/Gate
Connections
PCB
PCB Source
ConnectionPCB Gate
Connection
PCB Drain
Connection
eGaN FET
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EPC has over 45 discrete transistors and ICs available for
off-the-shelf delivery
Proven Reliability – 6 years and over 30 billion device
hours in the field with only 3 device failures.
Proven Product Portfolio
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eGaN IC Roadmap
LiDAR IC
Monolithic
Half-Bridge
ICDiscrete
Envelope
Tracking IC
Wireless
Charging
IC Discrete
plus driver
2010 2014 2015 2016 2017
DC-DC IC
2018
Half Bridge
+ Driver +
Level Shift
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• Chip-scale footprint eliminates package costs
Moore’s Law is Alive in GaN
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EPC Resources & Support
• Comprehensive Web with• Device specifications and models• Application notes• Reliability data
Design Review & Layout Support
• Demo Boards • We share Gerber files,
schematics, and BOM for ease of adapting the design
Digi-Key availability at time of release
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Very Complete
Web Site
• epc-co.com
• many links
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Product Selection Tool
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Application Focused
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• EPC is the global leader in GaN-on-Si
• GaN technology is improving rapidly
• EPC has demonstrated eGaN technology reliability in the lab and in the field
• eGaN integration significantly improves performance and lowers design cost
Summary