Date post: | 22-Jan-2018 |
Category: |
Engineering |
Upload: | dr-ashok-tiwari |
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Diode models
•Barrier voltage for silicon diode =0.7 V , for germanium diode = 0.3 V•Forward resistance •OPEN in reverse bias• V = mA /KΩ•Power in watts convert mA into A and KΩ into Ω
5Dr A K TIWARI : DIODE CIRCUITS:
For a pure sinusoidal waveform this average or mean value will always be equal to 0.637 x Vmax
The effective or R.M.S. value will always be equal to 1/√2 x Vmax
which is equal to 0.707 x Vmax
=1.1
=1.414
14Dr A K TIWARI : DIODE CIRCUITS:
Obtain the value of V and I in each case of Figs. (a–f), assuming the drop across the diode of 0.7 V.
Dr A K TIWARI : DIODE CIRCUITS: [email protected]
29
Obtain the value of V and I in each case of Figs. (a–e), assuming the drop across the diode of 0.7 V.
Dr A K TIWARI : DIODE CIRCUITS: [email protected]
30
Obtain the values of V and I in Fig., assuming the drop across the diode of 0.7 V.
Three voltages (2.3 V, 1.3 V, and 0.3 V) try to appear at the point V, but at a node no more than one voltage can appear. Hence, one voltage will appear forcing the other two not to appear through diodes D1 and D2. Hence, V = 2.3 V and I = 2.3 mA.
Dr A K TIWARI : DIODE CIRCUITS: [email protected]
31
Obtain the values of V and I in Fig. 3.39, assuming the drop across the diode of 0.7 V.
Dr A K TIWARI : DIODE CIRCUITS: [email protected]
32