Copyright@Dawin Electronics Corp. All right reserved

DM2G200SH6AAug. 2009DAWIN ElectronicsD WTMDAWIN ElectronicsD WTM

DescriptionDAWIN’S IGBT 7DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drivesand other applications where switching losses are significant portion of the total losses.

Features High Speed Switching BVCES = 600V Low Conduction Loss : VCE(sat) =1.95V (typ.) Fast & Soft Anti-Parallel FWD Short circuit rated : Min. 10uS at TC=100 Reduced EMI and RFI Isolation Type Package

ApplicationsMotor Drives, High Power Inverters, Welding Machine, Induction Heating, UPS , CVCF, Robotics , Servo Controls, High Speed SMPS

Absolute Maximum Ratings @ Tj=25(Per Leg)

Symbol Parameter Ratings UnitConditions

1/7

Equivalent Circuit

Equivalent Circuit and Package

Package : 7DM-2 Series

Please see the package out line information

VCES

VGES

IC

ICM (1)

IF

IFM

TSC

PD

Tj

Tstg

Viso

TL

Collector-Emitter VoltageGate-Emitter Voltage

Collector Current

Pulsed Collector Current

Diode Continuous Forward Current

Diode Maximum Forward Current

Short Circuit Withstand Time

Maximum Power Dissipation

Operating Junction Temperature

Storage Temperature Range

Isolation Voltage Maximum Lead Temp. for solderingPurposes, 1/8” from case for 9 secondsMounting screw Torque :M6Power terminals screw Torque :M5

600±20

250

200

400

200

400

10

1040

-40 ~ 150

-40 ~ 125

2500

260

4.0

2.0

V

V

A

A

A

A

A

uS

W

V

N.m

N.m

--

Tc = 25

Tc = 80

-

Tc = 80

-

Tc = 100

Tc = 25

-

-

AC 1 minute

-

-

67

54

① ② ③

High Power NPT & Rugged Type IGBT Module

Note : (1) Repetitive rating : Pulse width limited by max. junction temperature

Copyright@Dawin Electronics Corp. All right reserved

DM2G200SH6AAug. 2009DAWIN ElectronicsD WTMDAWIN ElectronicsD WTM

2/7

Electrical Characteristics of IGBT @ TC=25 (unless otherwise specified)

Symbol ParameterValues

UnitConditionsMin. Typ. Max.

C - E Breakdown Voltage

Temperature Coeff. of

Breakdown Voltage

G - E threshold voltage

Collector cutoff Current

G - E leakage Current

Collector to Emitter

saturation voltage

Turn on delay time

Turn on rise time

Turn off delay time

Turn off fall time

Turn on Switching Loss

Turn off Switching Loss

Total Switching Loss

Short Circuit Withstand Time

Total Gate Charge

Gate-Emitter Charge

Gate-Collector Charge

600

-

4.0

-

-

-

-

-

-

-

-

-

-

-

10

-

-

-

-

0.6

-

-

-

1.95

2.2

55

85

115

130

6.5

10

16.5

-

1500

220

675

-

-

7.0

1

±200

2.5

-

-

-

-

190

-

-

-

-

-

375

975

V

V/

V

mA

nA

V

V

nS

nS

nS

nS

mJ

mJ

mJ

uS

nC

nC

nC

VGE = 0V , IC = 250uA

VGE = 0V , IC = 1.0mA

IC = 1mA , VCE = VGE

VCE = 600V , VGE = 0V

VGE =±20V

IC=200A, VGE=15V @TC= 25

IC=200A, VGE=15V @TC=100

VCC = 300V , IC =200A

VGE = ±15V

RG =5.1Ω

Inductive Load, @TC = 25

VCC = 300V, VGE = ±15V

@TC = 100

VCC = 300V

VGE =± 15V

IC = 200A

BVCES

ΔBVCES/

ΔTJ

VGE(th)

ICES

IGES

VCE(sat)

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

Tsc

Qg

Qge

Qgc

Copyright@Dawin Electronics Corp. All right reserved

DM2G200SH6AAug. 2009DAWIN ElectronicsD WTMDAWIN ElectronicsD WTM

3/7

Electrical Characteristics of FRD @ TC=25 (unless otherwise specified)

Symbol ParameterValues

UnitConditionsMin. Typ. Max.

IF=200A

IF=200A, VR=300V

di/dt= -400A/uS

Tc =25

Tc =100

Tc =25

Tc =100

Tc =25

Tc =100

Tc =25

Tc =100

Diode Forward Voltage

Diode Reverse

Recovery Time

Diode Peak Reverse

Recovery Current

Diode Reverse

Recovery Charge

VFM

trr

Irr

Qrr

-

-

-

-

-

-

-

-

1.7

1.8

120

140

40

47

2400

3290

2.2

-

140

-

45

-

3150

-

V

nS

A

nC

Thermal Characteristics and Weight

Symbol ParameterValues

UnitConditionsMin. Typ. Max.

Junction-to-Case(IGBT Part, Per 1/2 Module)

Junction-to-Case(DIODE Part, Per 1/2 Module)

Case-to-Sink ( Conductive grease applied)

Weight of Module

/W

/W

/W

g

-

-

-

-

0.12

0.37

-

250

-

-

0.04

-

RθJC

RθJC

RθCS

Weight

Copyright@Dawin Electronics Corp. All right reserved

DM2G200SH6AAug. 2009DAWIN ElectronicsD WTMDAWIN ElectronicsD WTM

0

2

4

6

8

10

12

14

16

18

20

0 4 8 12 16 200

2

4

6

8

10

12

14

16

18

20

0 4 8 12 16 20

0

50

100

150

200

250

300

0 1 2 3 4 5 6

0

50

100

150

200

250

300

0 1 2 3 4 5 60

50

100

150

200

250

300

0 1 2 3 4 5 6

0

40

80

120

160

200

240

280

0.1 1 10 100 1000

4/7

Performance Curves

Collector – Emitter Voltage, VCE(sat) [V]

Col

lect

or C

urre

nt,

I C[A

]

Collector – Emitter Voltage, VCE(sat) [V]C

olle

ctor

Cur

rent

, I C

[A]

Collector – Emitter Voltage, VCE(sat) [V]

Col

lect

or C

urre

nt,

I C[A

]

Fig 1. Typical Output characteristics

Fig 3. Typical Saturation Voltagecharacteristics

Fig 4. Load Current vs. Frequency

Fig 5. Typical Saturation Voltage vs. VGE

Fig 2. Typical Output characteristics

Fig 6. Typical Saturation Voltage vs. VGE

Gate – Emitter Voltage, VGE [V]

Col

lect

or –

Em

itter

Vol

tage

, V C

E(s

at)[V

]

Common EmitterTC=25

300A200A

IC=150A

Common EmitterTC=125

300A200A

IC=150A

Gate – Emitter Voltage, VGE [V]

Col

lect

or –

Em

itter

Vol

tage

, V C

E(s

at)[V

]

TC=125

TC=25

Load

C

urre

nt [

A]

Frequency [KHz]

Duty cycle = 50%TC=125Power Dissipation = 190W

20V

15V

12V

10V

VGE = 8V

Common EmitterTC=25

20V15V

12V10V

Common EmitterTC=125

VGE = 8V

Copyright@Dawin Electronics Corp. All right reserved

DM2G200SH6AAug. 2009DAWIN ElectronicsD WTMDAWIN ElectronicsD WTM

0.001

0.01

0.1

1

1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01

0

3

6

9

12

15

0 400 800 1200 1600

0

30

60

90

120

150

180

210

240

270

0 20 40 60 80 100 120 140 160

0.1

1

10

100

1000

0.1 1 10 100 1000

1

10

100

1000

0 100 200 300 400 500 600 700

5/7

Common EmitterRL = 5.1ΩTC = 25

Vcc=300V

IGBT : DIODE :TC=25

Fig 7. Gate Charge Characteristics Fig 8. Transient Thermal Impedance

Col

lect

or C

urre

nt,

I C[A

]

Collector-Emitter Voltage, VCE [V]Fig 9. RBSOA Characteristic

Collector-Emitter Voltage, VCE [V]Fig 10. SCSOA Characteristic

Col

lect

or C

urre

nt,

I C[A

]

Gat

e-E

mitt

er V

olta

ge ,

V GE

[V]

Gate Charge, Qg [nc] Rectangular Pulse Duration [sec]Th

erm

al R

espo

nse

Zthj

c [

/W]

Case Temperature, Tc [ ]

Col

lect

or C

urre

nt ,

Ic [

A ]

Fig 12. rated Current vs. Case Temperature

Single Non-repetitive Pulse Tj≤125VGE = 15VRG = 5.1Ω

TJ ≤ 150VGE ≥15V

Col

lect

or C

urre

nt,

I C[A

]

Collector-Emitter Voltage, VCE [V]

Fig11. SOA characteristics

Ic MAX. (Pulsed)

Ic MAX. (Continuous)

Single Non-repetitive Pulse Tc = 25Curves must be deratedlinerarly with increaseIn temperature

DC Operation

1ms

100us

50us

0

400

800

1200

1600

2000

2400

0 100 200 300 400 500 600 700

Copyright@Dawin Electronics Corp. All right reserved

DM2G200SH6AAug. 2009DAWIN ElectronicsD WTMDAWIN ElectronicsD WTM

0

200

400

600

800

1000

1200

0 20 40 60 80 100 120 140 1600

50

100

150

200

250

300

0 1 2 3 4

6/7

Fig 13. Power Dissipation vs. Case Temperature

Pow

er D

issi

patio

n ,P

D[ W

]

Case Temperature, Tc [ ]Fig 14. Forward characteristics

Forward Drop Voltage, VF [V]Fo

rwar

d C

urre

nt,

I F[A

]

TC=125

TC=25

TJ ≤ 150VGE ≥15V

Copyright@Dawin Electronics Corp. All right reserved

DM2G200SH6AAug. 2009DAWIN ElectronicsD WTMDAWIN ElectronicsD WTM

Package Out Line Information 7DM-2

7/7