RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial, medical, broadcast, aerospace, and mobile radio applications. Their unmatched input and output design allows for wide frequency range use from 1.8 to 600 MHz. Typical Performance: V DD = 50 Vdc Frequency (MHz) Signal Type P out (W) G ps (dB) D (%) 87.5–108 (1,3) CW 600 CW 24.0 81.8 230 (2) Pulse (100 sec, 20% Duty Cycle) 600 Peak 24.7 73.5 Load Mismatch/Ruggedness Frequency (MHz) Signal Type VSWR P in (W) Test Voltage Result 230 (2) Pulse (100 sec, 20% Duty Cycle) > 65:1 at all Phase Angles 4.0 Peak (3 dB Overdrive) 50 No Device Degradation 1. Measured in 87.5–108 MHz broadband reference circuit. 2. Measured in 230 MHz narrowband production test circuit. 3. The values shown are the center band performance numbers across the indicated frequency range. Features Unmatched Input and Output Allowing Wide Frequency Range Utilization Device can be used Single--Ended or in a Push--Pull Configuration Qualified up to a Maximum of 50 V DD Operation Characterized from 30 to 50 V for Extended Power Range Suitable for Linear Application with Appropriate Biasing Integrated ESD Protection with Greater Negative Gate--Source Voltage Range for Improved Class C Operation Characterized with Series Equivalent Large--Signal Impedance Parameters Recommended drivers: AFT05MS004N (4 W) or MRFE6VS25N (25 W) Typical Applications Broadcast – FM broadcast – HF and VHF broadcast Industrial, Scientific, Medical (ISM) – CO 2 laser generation – Plasma etching – Particle accelerators (synchrotrons) – MRI – Industrial heating/welding Aerospace – VHF omnidirectional range (VOR) – Weather radar Mobile Radio – HF and VHF communications – PMR base stations Document Number: MRFE6VP6600N Rev. 0, 5/2015 Freescale Semiconductor Technical Data 1.8–600 MHz, 600 W CW, 50 V WIDEBAND RF POWER LDMOS TRANSISTORS MRFE6VP6600N MRFE6VP6600GN (Top View) Figure 1. Pin Connections Note: Exposed backside of the package is the source terminal for the transistors. OM--780G--4L PLASTIC MRFE6VP6600GN Drain A 3 1 4 2 Drain B Gate A Gate B OM--780--4L PLASTIC MRFE6VP6600N Freescale Semiconductor, Inc., 2015. All rights reserved.
Transcript
MRFE6VP6600N MRFE6VP6600GN
1RF Device DataFreescale Semiconductor, Inc.
RF Power LDMOS TransistorsHigh Ruggedness N--ChannelEnhancement--Mode Lateral MOSFETsThese high ruggedness devices are designed for use in high VSWR
industrial, medical, broadcast, aerospace, and mobile radio applications. Theirunmatched input and output design allows for wide frequency range use from1.8 to 600 MHz.
Typical Performance: VDD = 50 Vdc
Frequency(MHz) Signal Type
Pout(W)
Gps(dB)
D(%)
87.5–108 (1,3) CW 600 CW 24.0 81.8
230 (2) Pulse(100 sec, 20% Duty Cycle)
600 Peak 24.7 73.5
Load Mismatch/Ruggedness
Frequency(MHz) Signal Type VSWR
Pin(W)
TestVoltage Result
230 (2) Pulse(100 sec, 20%Duty Cycle)
> 65:1 at allPhase Angles
4.0 Peak(3 dB
Overdrive)
50 No DeviceDegradation
1. Measured in 87.5–108 MHz broadband reference circuit.2. Measured in 230 MHz narrowband production test circuit.3. The values shown are the center band performance numbers across the indicated
frequency range.
Features
Unmatched Input and Output Allowing Wide Frequency Range Utilization
Device can be used Single--Ended or in a Push--Pull Configuration
Qualified up to a Maximum of 50 VDD Operation Characterized from 30 to 50 V for Extended Power Range Suitable for Linear Application with Appropriate Biasing Integrated ESD Protection with Greater Negative Gate--Source Voltage Range
for Improved Class C Operation Characterized with Series Equivalent Large--Signal Impedance Parameters
Recommended drivers: AFT05MS004N (4 W) or MRFE6VS25N (25 W)
Typical Applications Broadcast
– FM broadcast
– HF and VHF broadcast
Industrial, Scientific, Medical (ISM)
– CO2 laser generation
– Plasma etching
– Particle accelerators (synchrotrons)
– MRI
– Industrial heating/welding
Aerospace
– VHF omnidirectional range (VOR)
– Weather radar
Mobile Radio
– HF and VHF communications
– PMR base stations
Document Number: MRFE6VP6600NRev. 0, 5/2015
Freescale SemiconductorTechnical Data
1.8–600 MHz, 600 W CW, 50 VWIDEBAND
RF POWER LDMOS TRANSISTORS
MRFE6VP6600NMRFE6VP6600GN
(Top View)
Figure 1. Pin Connections
Note: Exposed backside of the package isthe source terminal for the transistors.
OM--780G--4LPLASTIC
MRFE6VP6600GN
Drain A3 1
4 2 Drain B
Gate A
Gate B
OM--780--4LPLASTIC
MRFE6VP6600N
Freescale Semiconductor, Inc., 2015. All rights reserved.
2RF Device Data
Freescale Semiconductor, Inc.
MRFE6VP6600N MRFE6VP6600GN
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS –0.5, +133 Vdc
Gate--Source Voltage VGS –6.0, +10 Vdc
Storage Temperature Range Tstg –65 to +150 C
Case Operating Temperature Range TC –40 to +150 C
Operating Junction Temperature Range (1,2) TJ –40 to +225 C
Table 2. Thermal Characteristics
Characteristic Symbol Value (2,3) Unit
Thermal Impedance, Junction to CasePulse: Case Temperature 78C, 600 W Pulse, 100 sec Pulse Width, 20% Duty Cycle,
IDQ(A+B) = 100 mA, 230 MHz
ZJC 0.033 C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) Class 2, passes 2500 V
Machine Model (per EIA/JESD22--A115) Class B, passes 200 V
Charge Device Model (per JESD22--C101) Class IV, passes 2000 V
Table 4. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit
Gate Quiescent Voltage(VDD = 50 Vdc, ID = 100 mAdc, Measured in Functional Test)
VGS(Q) 2.0 2.6 3.0 Vdc
Drain--Source On--Voltage (4)
(VGS = 10 Vdc, ID = 1 Adc)VDS(on) — 0.2 — Vdc
Forward Transconductance (4)
(VDS = 10 Vdc, ID = 30 Adc)gfs — 28.0 — S
1. Continuous use at maximum temperature will affect MTTF.2. MTTF calculator available at http://www.freescale.com/rf/calculators.3. AN1955 – Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf and search AN1955.4. Each side of device measured separately.
1. Each side of device measured separately.2. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing
(GN) parts.
4RF Device Data
Freescale Semiconductor, Inc.
MRFE6VP6600N MRFE6VP6600GN
TYPICAL CHARACTERISTICS
1
100
0 2010
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 2. Capacitance versus Drain--Source Voltage
C,CAPACITANCE(pF)
10
Coss
Crss
Measured with 30 mV(rms)ac @ 1 MHzVGS = 0 Vdc
Note: Each side of device measured separately.
Ciss
10000
30 40 50
1000
IDQ(A+B) = 100 mA
Figure 3. Normalized VGS versus QuiescentCurrent and Case Temperature
Figure 5. Power Gain, Pout and Drain Efficiency versusFrequency
Figure 6. Power Gain, Drain Efficiency and CW OutputPower versus Input Power and Frequency
8RF Device Data
Freescale Semiconductor, Inc.
MRFE6VP6600N MRFE6VP6600GN
87.5–108 MHz BROADBAND REFERENCE CIRCUIT
Zo = 25
f = 87.5 MHz
f = 108 MHz
Zload
f = 108 MHz
f = 87.5 MHz
Zsource
fMHz
Zsource
Zload
87.5 3.4 + j15.0 7.5 + j6.12
98 3.9 + j14.9 7.9 + j5.57
108 2.8 + j15.3 8.0 + j5.19
Zsource = Test circuit impedance as measured fromgate to gate, balanced configuration.
Zload = Test circuit impedance as measuredfrom drain to drain, balanced configuration.
Figure 7. Broadband Series Equivalent Source and Load Impedance — 87.5–108 MHz
Zsource Z load
InputMatchingNetwork
DeviceUnderTest
OutputMatchingNetwork
--
-- +
+
5050
MRFE6VP6600N MRFE6VP6600GN
9RF Device DataFreescale Semiconductor, Inc.
230 MHz NARROWBAND PRODUCTION TEST FIXTURE — 4 6 (10.16 cm 15.24 cm)
Table 10. 230 MHz Narrowband Performance (1) VDD = 50 Vdc, IDQ(A+B) = 100 mA, Pout = 600 W Peak (120 W Avg.), f = 230 MHz,100 sec Pulse Width, 20% Duty Cycle
Characteristic Symbol Min Typ Max Unit
Power Gain Gps 23.3 24.7 26.6 dB
Drain Efficiency D 70 73.5 — %
Input Return Loss IRL — –15 –9 dB
1. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing(GN) parts.
10RF Device Data
Freescale Semiconductor, Inc.
MRFE6VP6600N MRFE6VP6600GN
230 MHz NARROWBAND PRODUCTION TEST FIXTURE — 4 6 (10.16 cm 15.24 cm)
Zsource = Test circuit impedance as measured fromgate to gate, balanced configuration.
Zload = Test circuit impedance as measured fromdrain to drain, balanced configuration.
Figure 15. Narrowband Series Equivalent Source and Load Impedance — 230 MHz
InputMatchingNetwork
DeviceUnderTest
OutputMatchingNetwork
--
-- +
+
Zsource Zload
5050
14RF Device Data
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MRFE6VP6600N MRFE6VP6600GN
PCB PAD LAYOUTS
Figure 16. PCB Pad Layout for OM--780--4L
(20.32)0.800
(4.70)
4X0.185
(mm)Inches
4X Solder Pads
1. Slot dimensions are minimum dimensions and exclude milling tolerances.
(10.39)0.409(1)
(9.88)0.389(1)
(20.70)0.815(1)
(8.89)0.350
(18.80)0.740
(8.89)0.350
(10.41)0.410
(4.70)
4X0.185
(mm)Inches
Solder pad withthermal via structure.
(8.26)0.325
Figure 17. PCB Pad Layout for OM--780G--4L
(12.95)0.510
MRFE6VP6600N MRFE6VP6600GN
15RF Device DataFreescale Semiconductor, Inc.
PACKAGE DIMENSIONS
16RF Device Data
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MRFE6VP6600N MRFE6VP6600GN
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18RF Device Data
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MRFE6VP6600N MRFE6VP6600GN
PACKAGE DIMENSIONS
MRFE6VP6600N MRFE6VP6600GN
19RF Device DataFreescale Semiconductor, Inc.
20RF Device Data
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MRFE6VP6600N MRFE6VP6600GN
21RF Device DataFreescale Semiconductor, Inc.
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages AN1955: Thermal Measurement Methodology of RF Power AmplifiersEngineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS DevicesWhite Paper RFPLASTICWP: Designing with Plastic RF Power TransistorsSoftware Electromigration MTTF Calculator RF High Power Model s2p FileDevelopment Tools
Printed Circuit Boards
To Download Resources Specific to a Given Part Number:1. Go to http://www.freescale.com/rf
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0 May 2015 Initial Release of Data Sheet
22RF Device Data
Freescale Semiconductor, Inc.
MRFE6VP6600N MRFE6VP6600GN
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