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Dual-Gate TFT for 3-DFlash Memory
Andrew Walker
Schiltron Corporation
December 4th 2009
Contents
• The Gathering Storm• The Inevitability of 3-D Flash• The Contenders for the Crown• Charge Trap Flash in 3-D• The Schiltron Solution Explained• Prototype Process Flow • Physical Results• Electrical Results• Conclusions• Acknowledgements
The Gathering Storm
Worldwide NAND Flash Memory Consumption by Major End Use Application
Source: In-Stat Report “Flash Applications Drive Strong Revenues Worldwide” Dec. 2008
The Gathering Storm
• NAND Flash market > $50B by 2014 • BUT…..• Classic NAND Flash within 2 years of brick wall
– 1 final technology node at sub-30nm half-pitch– Multi-bit per cell exhausted
• 3-D inevitable• IEDM Dec. 2009:
– First time with dedicated 3-D nonvolatile memory session– 3-D Charge-Trap-Flash-based in 4 out of 6 papers (ST,
Toshiba, Macronix, Kaist)– One 3-D PCM (Intel/Numonyx)– One NEMS mechanical memory (Kaist)
The Gathering Storm
• NAND Floating Gate Challenges– ONO does not scale– Tunnel oxide does not scale– Inter-cell interference
• Coupling Ratio collapses
Required floating gate height to suppress inter-polyparasitic coupling and the effect on the coupling ratio
Source: Y. Shin, Samsung, Symp. VLSI Circuits 2005
The Inevitability of 3-D Flash
• Lateral scaling:– A method that complicates a semiconductor process but
increases the number of good die per wafer– Cost increase due to process complexity more than offset by
cost decrease due to increased good die per wafer
• Monolithic 3-D Stacking:– Logical alternative to lateral scaling – Also increases process complexity but increases the number
of die per wafer
• What is the Real Cost Advantage of 3-D Stacking ?– Process complexity and cost increase– Yield may decrease– Number of die per wafer increases
The Inevitability of 3-D Flash
• Equation for cost of good 3-D die divided by cost of good 2-D die• Y – yields• NL – number of memory device layers• F – minimum half pitch• MLC – number of electrical bits per cell• Co – base wafer cost without memory processing• Ccrit_mask – cost of each critical memory masking layer and process• Ncrit_mask – number of critical masking layers• Z – rate of increase in wafer cost between generations• n – number of generations between 3-D and 2-D processes
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⎞⎜⎜⎝
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⎛=
Dmaskcrit
Dmaskcrit
no
Dmaskcrit
Dmaskcrito
D
D
D
D
LD
DD
die
Ddie
NCZCNCC
MLCMLC
FF
NYY
CC
2_
3_
3_
3_
3
2
2
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3
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22
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...1.
Source: A.J. Walker, IEEE Trans. Semi. Manuf. May 2009
The Inevitability of 3-D Flash
Source: A.J. Walker, IEEE Trans. Semi. Manuf. May 2009
The Inevitability of 3-D Flash
The Contenders for the Crown
• Resistance Change Approaches– Phase Change Memory (PCM) –
Intel/Numonyx– Simple Metal Oxide –
SanDisk/Toshiba ?– Perovskite - Unity ?– Solid-State Electrolytes - Axon
• At least 2 masking steps per device layer
• Probably 3
The Contenders for the Crown• Charge Trap Flash in Vertical Plane
– Vertical Recess Array Transistor (VRAT) - Samsung– Bit Cost Scalable (BiCS) - Toshiba
Source: Symp. VLSI Technology 2009
The Contenders for the Crown• Charge Trap Flash in Horizontal Plane
– TANOS - Samsung– TFT (BE)-SONOS - Macronix– Dual-Gate TFT SONOS - Schiltron
Source: Jung et al., IEDM 2006
Charge Trap Flash in 3-D
• Vread-pass > Vtprog (max) + margin• Vprog-pass > Vtprog (max) + margin
• Applies to both lateral and vertical NAND CTF
N+N+ N+N+
Vread
To Bit LineSource
ONO
Vread-pass Vread-pass
Inversion channel
Pass disturbs onselected string
Charge Trap Flash in 3-DFG scaling problems at
< 30nm
Nitride Storage
Need good worst-casestring current Read Pass Disturb
Thicken up tunnel oxide
Need high erase voltage
Thicken up blocking oxide(Al2O3)
Use high Work Function gate (TaN)
Need high program voltage
Program/pass disturb
Thicken up tunnel oxide
Optimization Circle
• Serious read pass and program pass disturbs remain• High program/erase voltages• MLC extremely challenging• Classic NAND blocks the advantages of classic SONOS
Charge Trap Flash in 3-D
Vread_pass (V)
Lifetime = time to shift erased Vtby 3V
Source: C.-H. Lee at al., Symp. VLSI Technology 2006
The Schiltron Solution Explained
• Vread-pass decoupled from Vtprog (max)• Vprog-pass decoupled from Vtprog (max)
N+N+ N+N+
Vread_pass
Vread
Vread_pass
To Bit Line
OFF
Inversion channel and depletion region providinggood shielding of memory charge from pass voltages
Source
DG structure with close electrostaticinteraction between top and bottom
devices providing good short channelcontrol
ONOSecond Gate
First Gate
Prototype Process Flow
• Test chip developed and laid out • Process architecture and recipes developed• Processed in Silicon Valley Technology Center (SVTC), San
Jose• First silicon functional• Smallest feature size < 50 nm
Prototype Process Flow
Silicon wafer
Nitride etch stopon oxide
HDP Oxide
Prototype Process Flow
Oxide trench etchand poly dep
Prototype Process Flow
PolySilicon CMP1(forms GATE1)
Prototype Process Flow
After polysilicon CMP1(forms GATE1)
Prototype Process Flow
X
Y
HDP oxide dep and channel trench etch
Prototype Process Flow
32 cell string after channel trench etch
Prototype Process Flow
X
Y
Gate1 oxide formationand channel a-Si dep
Prototype Process Flow
a-Si CMP2(forms active channels)
X
Y
Prototype Process Flow
Over 13 wafers: 16nm average oxide loss with 3sigma of 6nm
After CMP2
Prototype Process Flow
X
Y
ONO formation
Prototype Process Flow
X
Y
GATE2 deposition
Prototype Process Flow
X
Y
GATE2 litho & etch
Prototype Process Flow
64 cell string after 2nd gate formation
Prototype Process Flow
X
Y
Source/drain implantand low-temp anneal
Prototype Process Flow
XTEM perpendicular to wordline gate direction
CMP1 CMP2
Prototype Process Flow
XTEM perpendicular to channel direction
CMP1
CMP2
Physical Results
350 A channelthickness
48nm gatelength
45nm channel width “nanowire”
Physical Results
0 50 100 150 2001015
1016
1017
1018
1019
1020
Ant
imon
y C
once
ntra
tion
(/cm
3)
Depth (nm)
Electrical Results
500Shee
t Res
ista
nce
(Ohm
/sq)
Anneal Temperature (C)
550 600 650 700 750 800 8501000
1200
1400
1600
1800
2000
Anneal time = 1 min
Electrical Results
-210-12
10-11
10-10
10-9
10-8
10-7
10-6
-1 0 1 2 3 4 5
Sour
ce-D
rain
Cur
rent
(A)
First Gate Voltage (V)
Second Gate Voltage (V)
432
1
0-1
-4-3
-2
W/L = 50nm/65nmdch ~ 35nmVds = 0.5V
1st
2nd
Electrical Results
0
1
2
3
4
1 10 100 1000
Seco
nd G
ate
Thre
shol
d Vo
ltage
(V)
Duration of 9V Application to First Gate (s)
N+N+
Vpass =9V
Programmed memory cell
Electrical Results
MidcellGate voltage
OFF
OFFOFF
ON with read pass voltage ON with read pass voltage
Bit Line Source
64 cell cell string (W/L=45nm/48nm Devices)
Electrical Results
-1 0 1 2 3 4 510-10
10-9
10-8
10-7W
orst
-Cas
e St
ring
Cur
rent
(A)
Read-Pass Voltages (V)
64 cell stringW/L = 45nm/47nm
dch ~ 35nmVds = 1V
2
3
45678
Second Gate Voltage on Mid-Cell (V)
All memory devices offexcept mid-cell
Mid-cell first gate at -3V
Electrical Results64 cell string
W/L = 45nm/47nmdch ~ 35nm
Mid-cell first gate at -3V
All memory devicesoff except mid-cell
Mid-cell second gateat 3V
Wor
st-C
ase
Strin
g C
urre
nt (n
A)
String Source-Drain Voltage (V)0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
20406080
100120140160180200 Read-Pass Voltage (V)
3
4
5
6
7
8
Electrical ResultsW
orst
-Cas
e St
ring
Cur
rent
(nA
)
Read-Pass Voltage (V)
0
800
100
200
300
400
500
600
700
2 3 4 5 6 7 8
64 cell
32 cell
16 cell
8 cellW/L = 45nm/47nmdch ~ 35nmVds=1.1V
Mid-cell first gate at -3V
All memory devicesoff except mid-cell
Mid-cell second gate at 3V
Electrical ResultsTh
resh
old
Volta
ge (V
)
Number of Cycles
1
2
3
4
10 102 103 104 105
32 cell stringW/L = 45nm/47nm
dch ~ 35nmVprog/Verase = 17.5V 100us / -13V 400ms
Read-pass voltage = 7VProgram-pass voltage = 7V
Erase-pass voltage = 6V
Electrical ResultsTh
resh
old
Volta
ge (V
)
Time at 85C (s)
0
1
2
3
10 102 106 108
4
104
After 105 cycles10 years
Conclusions
• 3-D stackable and inherently scalable• Existing materials and methods
– No new materials or material breakthroughs required– Program/erase close to existing approaches
• Ideal for both stand-alone (NAND replacement) and embedded
• No pass disturbs– Shielding gets rid of the bane of all Charge Trap Flash
NAND• Concept shown on silicon at W and L < 50nm with 64
bit strings– IEDM Dec. 2008 – IEEE Trans. Semicon. Manufacturing May 2009 – 3D cost
model– IEEE Trans. Electron Devices Nov. 2009
Acknowledgements
• Professors Endoh and Nishi for the invitation to speak at this Workshop
• TJ Rodgers at Cypress Semiconductor and CJ Koomen for initial investment
• R. Rhoades at Entrepix for CMP expertise• L. Liang at Precision TEM • A. Chatila at MEMC for constant support• L. Marques for constant support