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ECAL Si sensors status and plans May 2006

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ECAL Si sensors status and plans May 2006. V.Vrba. Status. EUDET prototype : end of 2005: production of 20 wafers produced at ON Semiconductor, tested at Prague  good quality; beginning of 2006: wafers delivered to Ecole Polytechnique – no report about any problem;. : - PowerPoint PPT Presentation
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CALICE meeting, Montreal, 10 th May 2006 Václav Vrba, Institute of Physics, AS CR ECAL Si sensors status and plans May 2006 V.Vrba
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Page 1: ECAL Si sensors status and plans May 2006

CALICE meeting, Montreal, 10th May 2006Václav Vrba, Institute of Physics, AS

CR

ECAL Si sensors status and plansMay 2006

V.Vrba

Page 2: ECAL Si sensors status and plans May 2006

CALICE meeting, Montreal, 10th May 2006Václav Vrba, Institute of Physics, AS

CR

StatusEUDET prototype: end of 2005: production of 20 wafers produced at ON Semiconductor, tested at Prague good quality; beginning of 2006: wafers delivered to Ecole Polytechnique – no report about any problem;

: April 2006: ordered next batch of about 60 wafers at On Semiconductor to be ready ~ June 5, then measured and delivered to Ecole Polytechnique ~ June 15 waiting for news from news from Ecole Polytechnique; looking forward for new delivery from ON Semiconductor.

Page 3: ECAL Si sensors status and plans May 2006

CALICE meeting, Montreal, 10th May 2006Václav Vrba, Institute of Physics, AS

CR

Recent developments4x4 pad sensor array produced @ONSemiconductor with poly-silicon resistors

Layout of components on the wafer :

Page 4: ECAL Si sensors status and plans May 2006

CALICE meeting, Montreal, 10th May 2006Václav Vrba, Institute of Physics, AS

CR4

I-V and C-V on single diodes

Page 5: ECAL Si sensors status and plans May 2006

CALICE meeting, Montreal, 10th May 2006Václav Vrba, Institute of Physics, AS

CR5

I-V curves for 4x4 pad array

Page 6: ECAL Si sensors status and plans May 2006

CALICE meeting, Montreal, 10th May 2006Václav Vrba, Institute of Physics, AS

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Reverse current long term stability

Page 7: ECAL Si sensors status and plans May 2006

CALICE meeting, Montreal, 10th May 2006Václav Vrba, Institute of Physics, AS

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Polysilicon resistors

: Polysilicon resistors ~ 1.2MOhm +/- ~30% can be improved by optimization of resistor shape (minimize fluctuationd due to etching), better tuning of lithography etc.

Page 8: ECAL Si sensors status and plans May 2006

CALICE meeting, Montreal, 10th May 2006Václav Vrba, Institute of Physics, AS

CR

Plans (1)New design: smaller size: from 10 mm pitch to ~ 5 mm pitch; different shapes: hexagonal shape gives better two-dimensional resolution then square shape (by approx 30%) – or – the same resolution with less number of electronic channels;

Page 9: ECAL Si sensors status and plans May 2006

CALICE meeting, Montreal, 10th May 2006Václav Vrba, Institute of Physics, AS

CR

Plans (2)Precision layer (s ?): better determination of the shower position, shower disentangling etc; pre-shower layer? needs simulation for optimal position and cell size for the given detector spatial configuration.

Page 10: ECAL Si sensors status and plans May 2006

CALICE meeting, Montreal, 10th May 2006Václav Vrba, Institute of Physics, AS

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Investigation of possibility of use of 6“ wafers

Page 11: ECAL Si sensors status and plans May 2006

CALICE meeting, Montreal, 10th May 2006Václav Vrba, Institute of Physics, AS

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Summary

: production of wafers for EUDET module in progress shall be in time; proved possibility of fabrication of integrated bias resistors no visible reduction of production yield; studies of fine granularity, different pad shape, precision layer, pre-shower layer are in progress; possibility of the use of 6” wafers is also investigated.

Page 12: ECAL Si sensors status and plans May 2006

CALICE meeting, Montreal, 10th May 2006Václav Vrba, Institute of Physics, AS

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Sensor probing @ Institute of Physics

V r. 2006: testování cca 30-40% dodatečné produkce senzorů.

Pracoviště pro měření pixelových detektorů ve Fyzikálním ústavu

Senzory vyrobené v ON Semiconductor CR (dříve TESLA Sezam)


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