ECE

Memristors for computing & Future Non-Volatile Memory Application-

Beyond transistors and silicon technologySomnath Chakraborty, Dept. Of ECE, UMASS

The Ionic and Electronic Device and Materials (IEDM) Group

CompSci 891M- 22nd September, Fall’15

Electrical and Computer Engineering

1. Present Silicon Technology.2. What is “Memristor” !3. Device operation principle/ Physics behind Resistance switching mechanism.4. Promising future/ application (NvMe, Analog Computing, Digital Computing

etc.).5. Why should we care?6. Some funny/unconventional materials as Memristors.

Electrical and Computer Engineering

Well already know this, still a fun slide to present!

Unfortunately life is not so much fun. Fundamental limits are close with present 14nm,10nm technology and it gets more and more difficult with diminishing return as we go smaller. So? What's next?

Well Played Silicon, Well Played !

Electrical and Computer Engineering

Memristors to the rescue!!!

“The Memristor was a term coined in 1971 by circuit theorist Leon Chua as a missing non-linear passive two-terminal electrical component relating electric charge and magnetic flux linkage.”- Wikipedia

BENEFITS: •High Density•Fast•Ultra high Endurance•Non Volatile•3D stackable

insulator V

Metal 1

Metal 2

Metal 2

insulator

Metal 1

Electrical and Computer Engineering

-Memristive switching mechanism for metal/oxide/metal Nanodevices- J. JOSHUA YANG, MATTHEW D. PICKETT, XUEMA LI, DOUGLAS A. A. OHLBERG,DUNCAN R. STEWART* AND R. STANLEY WILLIAMS

Electrical and Computer Engineering

A basic Memristor with One Top Electrode(Vertical) and One Bottom Electrode(Horizontal).The cross point defines the device.

Electrical and Computer Engineering

Switching in Metal/TaOx/Ta/Metal Devices- Pt TaOx Ta Pt

Change in Resistance - ~10^2 to 10^4

Electrical and Computer Engineering

Memristor PCM STTRAM SRAM DRAMFlash

(NAND)HDD

Reciprocal density (F2) <4 4-16 20 - 60 140 6-12 1 - 4 * 2/3

Energy per bit (pJ) 0.1–3 2-25 0.1-2.5 0.0005 0.005 0.00002 1–10x10 9

Read time (ns) <10 10-50 10-35 0.1-0.3 10 100000 5–8x10 6

Write time (ns) ~10 50-500 10-90 0.1-0.3 10 100000 5–8x10 6

Retention years years years as long as

voltage applied

<< second years years

Endurance (cycles) 1012 109 1015 >1016 >1016 104 104

prototype and … … commercialized technologies

J. Joshua Yang et al., Nature Nanotechnology 8, 13 (2013)

Electrical and Computer Engineering

Intel and Micron already announced their collaboration in making these memory modules to hit store in 2016!

-Courtesy: Intel

Electrical and Computer Engineering

Outlook: Roadmap

Time

Chipdevelopment

Universal Memory

Analog and Neural Computing

W.G. Kim et al., SK-hynix J. Joshua Yang et al., HP LabsVLSI Technology Symposium (2014) 138-139

Flash

DRAM

Solid State Disk

Storage Class Memory

Electrical and Computer Engineering

Q & A?

Thank You!