EFE1Power semiconductors
Mohan chap. 2T-484 chap. 10
J.Nybo14.02.05
Rev. 16.02.05
Side 2
Diodes
Recovery time
PT
v t i t d tT
V i t d tVT
Qtabs s
d rd r
ss
t
1 1
0
( ) ( ) ( )
Side 3
Diode types
• Schottky: Vf = 0.4- 0.6V, Vr = 50-100V
• Fast- recovery: Vr: in 100’s V, If: in 100’sA
• Line-frequency: Vf: 0.8-1.0V, Vr: in KV, If: in KA
Side 4
Side 5
Side 6
Overview
Side 7
Desired switch characteristics
Side 8
Bipolar junction transistors
Side 9
Darlington gain
Side 10
Storage delay
Side 11
Side 12
Side 13
Metal Oxide Semiconductor (MOSFET)
Possitive R-on temp. coefficients, makes it easy to parallel MOSFET’s
Side 14
Current rise timeMillercapacitor
Side 15
Voltage rise time
Side 16
Driver power
Side 17
Side 18
Side 19
Side 20
Insulated Gate Bipolar Transistor (IGBT)
Side 21
IGBT characteristics
Side 22
Side 23
Side 24
Side 25