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OPTOELECTRONIC DEVICES
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Light Emitting
Diodes
Red LED White LED
LED for displays Blue LED LED for traffic light
LEDs
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OPTOELECTRONIC DEVICES
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DIODE LASERS
Diode lasers have been used for cutting,
surgery, communication (optical fibre),
CD writing and reading etc
http://www.semiconductor-technology.com/projects/iqe/index.htmlhttp://photos4.flickr.com/6933867_7223c5b695.jpg8/10/2019 Electronic Devices Optoelectronics
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Producing Laser in the
Lab
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Optoelectronic devices for
Photovoltaic Applications
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Solar Cells
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Fibre optics Communication
Transmitter Channel Receiver
IR - Lasers
IR-Photodetector
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Head Mounted Display Applications: Next
generation head mounted display and virtualreality training
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n
nthnppn
/
/
pgand,npassumptionwith the
ln
1
1
th
op
oc
op
kTqV
p
n
nn
p
p
op
kTqV
th
opnpopop
g
g
q
kTV
IenL
pL
qAI
IeII
gLLqAgI
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SOLAR CELLS
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SOLAR CELLS
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Finished Solar Cell Cross Section
SOLAR CELLS
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SOLAR CELLS
ocsc
ocsc
mm
VI.max
VI
VIfactorFill
ffP
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PHOTO DETECTORS
Quantum efficiency ,
Q=(Jop/q)/(Pop/h)
where Jopphotocurrent densityPop- incident optical power density
GAIN BANDWIDTH AND SIGNAL TO NOISE RATIO OF
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GAIN, BANDWIDTH AND SIGNAL-TO-NOISE RATIO OF
AVALANCHE PHOTO DETECTORS
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Signalto-noise Ratio
Johnson NoiseRandom thermal motion of the
carrier
Shot Noiserandom thermal generation-
recombination of EHP
Noise equivalent power (NEP)- is the minimum
detectable signal that would produce the same rms
output as the noise
DetectivityD=1/NEP
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WAVEGUIDE PHOTO DETECTORS
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LIGHT EMITTING MATERIALS
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LIGHT EMITTING MATERIALS
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FIBER OPTIC COMMUNICATION
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Light Amplification by Stimulated Emission of Radiation (LASERS)
kThkTEE een
n //)(
1
2 1212
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Light Amplification by Stimulated Emission of Radiation (LASERS)
B12n1(12) = A21n2 +
B21n2(12)
Absorption = Spontaneous +
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B12n1(12) = A21n2 +
B21n2(12)
Absorption = Spontaneous +Stimulated
emission emission)(
)(
rateemissionsSpontaneou
rateemissionStimulated12
21
21
221
12221
A
B
nA
nB
1
2
21
21
12121
12221
)(
)(
rateAbsorption
rateemissionStimulated
n
n
A
B
nB
nB
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Light Amplification by Stimulated Emission of Radiation (LASERS)
materiallasertheofindexrefractiveisnwhere
2
0 n
mL
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SEMICONDUCTOR LASERS
Population Inversion at a junction
kTFE
i
kTEF
v
kTEF
i
kTFE
c
pivp
innc
eneNp
eneNn
/)(/)(
/)(/)(
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SEMICONDUCTOR LASERS
gpn
pn
EFF
hFF
)(
)(
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SEMICONDUCTOR LASERS
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Emission Spectra for p-n junction Lasers
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m
d
dn
nLn
or
d
dnLLn
d
dm
Lnmor
n
mL
o
ooo
oooo
o
o
12
2
1
2
22
2
2
If we let m=-1, we can calculate the change in
wavelength o between adjacent modes
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Heterojunction Lasers
Basic Semiconductor Lasers
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Double Heterojunction Laser structure
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Double -Heterojunction Laser structure
Separate Confinement and Graded Index Channels
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Separate Confinement and Graded Index Channels
Vertical Cavity Surface Emitting Lasers (VCSELs)
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Vertical Cavity Surface-Emitting Lasers (VCSELs)
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High Frequency and
High-Power Devices
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Tunnel Diode
IMPATT Diode
P-N-P-N Diode
Insulated Gate Bipolar Transistor(IGBT)
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Tunnel Diode
Degenerate n-type if n>NC
Degenerate p-type if p>Nc
Tunnel Diode
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Tunnel Diode
Tunnel Diode Band Diagram
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Tunnel Diode Band Diagram
Tunnel Diode Characteristics
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Tunnel Diode Characteristics
Impact Avalanche Transit-Time (IMPATT) Diode
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Impact Avalanche Transit Time (IMPATT) Diode
Time dependence of the growth and drift of holes in Read Diode
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Time dependence of the growth and drift of holes in Read Diode
Lfv
L
d 2
vfor
1
2
1 d
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The transferred electron mechanism
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The transferred electron mechanism
The transferred electron mechanism
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e t a s e ed e ect o ec a s
Formation and drift Space Charge Domains
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p g
The P-N-P-N Diode
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Two Transistor Analogy of SCR
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gy
)(1ior
)i(
But
21
21
2121
21
1222
2111
COCO
COCO
CC
BCOC
BCOC
II
iII
iii
iIiiiIii
Forward Blocking State
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g
The Semiconductor Controlled Rectifier (SCR)
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( )
Application of SCR
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pp
Insulated Gate Bipolar Transistor (IGBT)
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p
COMFET- Conductivity Modulated FETIGTInsulated Gate Transistor
IGR- Insulated Gate Rectifier
GEMFET- Gain Enhanced MOSFET
BiFET- Bipolar FET
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Characteristics of IGBT:
It has very high input impedance like MOSFET
It has a low input capacitance
In the ON state , it has low resistance and high
current handling capability
It can turn off more easily than SCR