IATENT5

ALKALINE COPPER PLATING US 6664633 (LSI Logic Corp.) Zhu, M. A method for depositing a metal conduction layer in a fea ture of a subs t ra te is provided. The method includes forming the feature in the substrate, the feature having a width dimension of less than about 0. l~m. A barrier layer is deposited on the substrate, preferably using a self ionized p lasma deposition process, where the barrier layer has a thickness of no more than about 300 A °. A substantial ly continu- ous seed layer is deposi ted on the bar r ie r layer, where the seed layer has a thickness of less than about 300 A °. A conduction layer is deposited from an electroplating solution selected from the group consist ing a pyrophospha te solution, an alkal ine cyanide solution and an alkaline metal ion complex- ing solution. The process is adaptable to electroplat- ing fea tures on a subs t ra te wherein the features have a width dimension of less than about O. l~m.

PLASma CVD APPARA~S FOrt L~GE A ~ A CVD F,LM US 6663715 (Anelva Corp.) Ikemoto, M.

CVD APPARATUS US 6663714 (Anelva Corp.) Doi, H.; Itani, S.

ELECTROPOLISHING PROCESS FOR INNER SURFACE OF A LONG TUBE US 6660138 (Ind. Tech. Res. Inst.) Chen, Y.F.; Lin, C.H.

ELECTROLESS COPPER PLATING BATH,, ELECTROLESS COPPER PLATING METHOD AND ELECTRONIC PART US 6660071 (Murata Manufacturing Co..) Kunishi, T; Yoshida, Y. An electroless copper p la t ing ba th conta ining a cupric compound, a cupric ion complexing agent, a reduc ing agent , and a pH ad jus t ing agent , in which a carboxylic acid is added as a reac t ion accelerator to accelerate the oxidation reaction of the reduc ing agent . It does not need to use formaldehyde as the reducing agent yet it has a plat ing reaction rate which is equivalent to tha t of a bath in which formaldehyde is contained as the reducing agent.

70 Metal Finishing