Partners: MAIN COMMITTEE PLENARY SPEAkERS PROGRAMME AT A GLANCE STUDENT WORkSHOP AUTHOR INDEX EMBEDED SYSTEM DESIGN AND APPLICATIONS 2010 4TH EDITION May, 13-15, Baia Mare ROMANIA 8 “IC Design Challenges in State-of-the-Art CMOS: High variability and Low-Power/Low-voltage” by Andrei Vladimirescu, University of California Berkeley, Institut d’Electronique de Paris Andrei vladimirescu’s short biography: Andrei Vladimirescu received his MS and PhD degrees from the University of California, Berkeley, where he was a main contributor in the development of the circuit simulator SPICE. He is the author of the leading text on the subject, The SPICE Book. Andrei conceived and managed the develop- ment of a number of analog and mixed-signal Electronic Design Automation products for Daisy Systems, Analog Design Tools, Valid and Cadence. Today, Andrei is a professor at the University of California Berkeley and at the Institut Su- perieur d’Electronique de Paris (ISEP). His research interests are in analog simulation, modeling and design, ultra-low-voltage design and circuit techniques for new technologies. Abstract The constraints in IC design have become more strict with every technology generation since 0.18 mm. Contradic- tory requirements such as mixed A/D integration on SOCs for cost, low-voltage operation for power budget, and in- creased inter- and intra-die variability of electrical parameters need to be considered. This talk explores possible solutions along different directions: new devices, innovation in design, and CAD methodologies and tools. At the transis- tor level new devices such as SOI, Double-Gate and FinFET are potential candidates to replace bulk CMOS below 32nm; they all show reduced variability in exchange for more complex processes. At the circuit level Ultra-Deep-Sub-Micron (UDSM) transistors impact differently analog and digital circuits, both detrimentally in performance and power; some of the techniques used to overcome will be addressed. A key factor in mitigating the problems raised by the advanced technology nodes are the CAD methodologies and tools used. New functionality in tools and potentially more effective methodologies will be highlighted.
Transcript
Partners:
MAIN
COMMITTEE
PLENARY SPEAkERS
PROGRAMME AT A GLANCE
STUDENT WORkSHOP
AUTHOR INDEX
EMBEDED SYSTEM DESIGNAND APPLICATIONS 2010
4TH EDITIONMay, 13-15, Baia Mare
ROMANIA
8
“IC Design Challenges in State-of-the-Art CMOS: High variability and Low-Power/Low-voltage” by Andrei Vladimirescu, University of California Berkeley, Institut d’Electronique de Paris
Andrei vladimirescu’s short biography:
Andrei Vladimirescu received his MS and PhD degrees from the University of California, Berkeley, where he was amain contributor in the development of the circuit simulator SPICE. He is the author of the leading text on the subject, The SPICE Book. Andrei conceived and managed the develop-ment of a number of analog and mixed-signal Electronic Design Automation products for Daisy Systems, Analog DesignTools, Valid and Cadence. Today, Andrei is a professor at the University of California Berkeley and at the Institut Su-perieur d’Electronique de Paris (ISEP). His research interests are in analog simulation, modeling and design, ultra-low-voltage design and circuit techniquesfor new technologies.
Abstract
The constraints in IC design have become more strict with every technology generation since 0.18 mm. Contradic-tory requirements such as mixed A/D integration on SOCs for cost, low-voltage operation for power budget, and in-creased inter- and intra-die variability of electrical parameters need to be considered. This talk explores possiblesolutions along different directions: new devices, innovation in design, and CAD methodologies and tools. At the transis-tor level new devices such as SOI, Double-Gate and FinFET are potential candidates to replace bulk CMOS below 32nm;they all show reduced variability in exchange for more complex processes. At the circuit level Ultra-Deep-Sub-Micron(UDSM) transistors impact differently analog and digital circuits, both detrimentally in performance and power; some ofthe techniques used to overcome will be addressed. A key factor in mitigating the problems raised by the advancedtechnology nodes are the CAD methodologies and tools used. New functionality in tools and potentially more effectivemethodologies will be highlighted.
Process independent CMOS voltage referenceby Stefan Marinca, Analog Device, San Jose, CA, USA
Stefan Marinca’s short biography:
Stefan joined ADI limerick, Ireland in 2000 as senior design engineer. He is currently a staff engineer at Analog De-vice, San Jose, CA, USA. B.S.C. in Electrical Engineering (1972) and PhD in Electronic Measurements (1995), TechnicalUniversity of Timisoara, Romania. Between 1977 and 1999 assistant professor and associate professor at North Univer-sity of Baia Mare, Romania. He has been involved in R&D on electrical and electronically measurements and holds 18 Romanian patents. He hasbeen granted 16 US patents and 7 others are pending approval.
Abstract
Bandgap type voltage references are based on summation of two voltages having opposite Temperature Coefficients (TC). These references are very sensitive to process variation and other circuit errors such: offsets, mismatches, thermocouple
voltages. This paper presents a new voltage reference independent of the errors mentioned. It is based on US7576598 patent and it is an Analog Devices released part in seven nominal voltages: 1.25V, 2.048V, 2.5V, 3V, 3.3V, 4.096V and 5V.
Reflections on the exponential growth in semiconductor industryby Professor Mircea Bodea, Politehnica University of Bucharest
Mircea Bodea’s short biography:
Mircea Bodea, Ph.D., is a professor and Ph.D. supervisor at “Politehnica” University of Bucharest and scientific consultantat O2Micro Romania. He is the holder of 14 patents and the author of 219 papers in the field of electronic devices and cir-cuits theory and analog integrated circuits. He translated in Romanian some reference books like Analysis and Design of Analog Integrated Circuits (Gray & Meyer)or The Spice Book (Vladimirescu). He is a Senior Member of IEEE and a corresponding member of the Academy of Ro-manian Scientists. Prof. Bodea is also a CNCSIS and CEEX expert and the editor of the Electronics Engineering series at Editura Tehnica.
An Overview of How to Make Properly Harmonics Distortions Measurements in Mediumvoltage Distribution System
by Liviu Petrean, North University of Baia Mare, Romania
Liviu Petrean’s short biography:
Liviu Emil PETREAN was born in Romania on 15 September 1946. He received the B.Sc. "Diploma of Merit" in PowerEngineering in 1969 and the Ph. D. degree in Electromagnetic Fields in 1983 from the "Politehnica" University of Timisoara.He worked first 6 years in power engineering area. Liviu Emil Petrean is currently Professor in Electrotechnics, ProtectiveRelaying and Power Quality in the Faculty of Engineering, North University of Baia Mare and is director of Electrical Engi-neering Department. His main research interests concern finite elements method in Electromagnetic Fields, Electromagneticseparation of minerals, Energy Efficiency and Power Quality. In these fields, he authored over 80 scientific papers publishedor presented at international or national conferences. He has extensive experience in experimental research work certifiedby over 30 scientific research projects, from which he coordinated 11. He is IEEE affiliate member and technical reviewerfor the PIERS Progress in Electromagnetics Research Symposium.
Abstract
In this paper we present an overview on how to conduct properly measurements and analysis to obtain accurate resultsin harmonic distortions propagation. Distortion of sinusoidal voltage and current waveforms caused by harmonics is oneof the major power quality concerns in electric power system. With the widespread proliferation of power electronics oadssignificant amounts of harmonic distortion currents are being injected into power system. The distribution system imped-ance, the presence of a power factor improvement capacitor bank and the amount of resistive loads in the system arethree primary variables affecting the system response characteristic. Current amplifications occur at frequencies differentof the resonant frequencies; three maximum values corresponding to three oscillatory frequencies were found. In orderto differentiate harmonic currents due to nonsinusoidal loads from harmonic currents due to resonance involving capacitorbank a frequency-domain analysis has been performed. It presents useful recommendations on how, where and underwhat conditions to make measurements of harmonic distortions.
