Dr. Thomas Gädda

Enabling Silicon and Metal Oxide Materials

for Dielectric and Pattern Transfer Applications

Director

technological leader in development and production of advanced siloxane and metal oxide monomers and polymers.

WHO WE ARE.

We are one of the few global players that have an proven and audited track record at producing and

monitoring specialty materials at PPT purity level at our 3000sqm Clean Room facility in Helsinki.

Our Materials are being used in the latest semiconductor devices used for ultra high

definition and portable gadgets. Our customers include tier-1 chemical and

semiconductor manufacturing companies.

With over 57 patents with 42 issued and 15 pending, we continue to invest in

R&D and grow our knowledge in the field.

audited track record

2

PIBOND CONFIDENTIAL INFORMATION

+3,000 m2

of space

+100 tons/year

capacity with

scope double

capacity

Clean room

production:

Class 10/100

Explosion

proof HVAC

units

Back up

generators for

uninterrupted

power

availability

Extensive in-

house

semiconductor

process testing

capabilities

State of the art

automation

system

Temperature

and humidity

controlled

Scalable

Operations

Production

approved by

multiple Tier 1

Semiconductor

companies

Fully audited

production

track record

ISO 9001 and

ISO 14001

certified

PRODUCTION FACILITY.

TECHNOLOGY PLATFORMS.

SG Series• Organo-siloxane dielectrics

• In high volumes for sub-Al

• Extending uLK and conformal

dielectrics

SH Series• Siloxane hardmask

• First used at 65nm NAND Flash

• Continuous improvement and now

at 16nm Flash NAND and 10nm

Logic

SC Series• Optical organo-siloxane dielectrics

• Commercial production in CIS-FSI

• Extending BSI and WLO CISs

• Silicon photonics

SAP Series• Material qualified for MEMS and

testing in several fabs for sensors and

IC fabs

• Low cost alternative for ALD and

better CD control to CVD

PiBondTechnology

OUR MARKETS.

MEMS

3D IC & TSV

Qualified and in pilot• Metal oxide hardmasks for DRIE

Product Developed• Extension of hardmask

for TSV / Interposer

etch process

simplification

LOGIC

MEMORY

Qualified and in Device,• Organosiloxane dielectrics

• Si-HM in qualification stage

Qualified and in Device• In NAND and flash memory

• 28 16nm nodes

OPTICAL SENSORS

Qualified and in Device• Optical dielectrics

• CIS / Si Photonics

PiBond Dielectrics

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Optical siloxane dielectrics Silsesquioxane dielectrics

Several thickness formulations

Leading range refractive of index

CVD SiO2 replacement

Gap fill and planarization control

Conformal and patternablelens

filter

High index material (n=1.68)

SiO2

Cu

1 m

lens

filter

High index material (n=1.68)

SiO2

Cu

1 m 5µm lines / spaces

PRODUCT

Cure temp.

range

[°C]

Refractive index

at 633nm

Dielectric

constant

Film thickness

max. [µm]

Hardness Modulus

[GPa]

SC 200 150 - 250 1.43 3.6 >5 0.2 3.3

SC 300 150 - 250 1.65 3.6 >15 0.4 7.0

SC 400 200 - 400 1.65 3.2 1.6 0.6 9.5

SC 500 150 - 400 1.23 2.5 1.0 0.7 5.6

SC 800 150 - 300 1.80 - 1.93 7.5 ~5 0.8 19

Main benefits:

• Demonstrated performance improvement in practise and through modelling

• Industry leading RI range from 1.2 up to 1.9+

• Application dependent planarization or conformality control

• Excellent thermal and optical stability

SC Products extend to 3D-IOC (hybrid and heterogenous integration)

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SC products

• Several SC 500 (low RI material) product formulations ranging from extremely conformal to

planarizing coatings

• SC 200 is a planarizing

passivation coating

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SC products - features

SC 500, planarizing SC 500K, conformal SC 200, planarizing

• SC 300 and 400 series products are planarizing materials

• High refractive index with excellent gap fill capability

▪ High thermal resistance

▪ Readily adoptable for Cu interconnect processes

▪ CMP compatible

▪ Excellent gap fill and adhesion

▪ Excellent transparency at visible wavelengths with high refractive

index

lens

filter

High index material (n=1.68)

SiO2

Cu

1 m

lens

filter

High index material (n=1.68)

SiO2

Cu

1 m

ultra high RI coatings

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• High index of refraction – range: 1.65 – 1.93

• Excellent transmittance

• Low film shrinkage during cure

• Minimal haze

SC 800p F Value

Thickness (nm) 574

N @ 633nm 1.93

Shrinkage (130-200C) 2

Haze(D1003-97)(A) 0.13

Haze(D1003-97)(C) 0.14

@450nm @633nm

2.02 1.93

1.93 1.85

1.85 1.79

1.69 1.65

1.52 1.50

1.43 1.42

1.26 1.25

• SG-Series – MSQ dielectric

• Designed for easy insertion into Partial Etch Back and

Total Etch Back planarization processes found in both

PMD and IMD Applications. Served in HVM fore

+10years.

• SX-Series – MSQ-HSQ mixed siloxane dielectric

• Partial and total etchback planarization processes, Sub-

Al IMD layer, BPSG leveling. Defect free fill of features

as narrow as 50 nm in width and below

• ST Series – HSQ dielectric

• HSQ polymer formulated to meet requirement s of high

thermal budget applications e.g. Shallow Trench

Isolation and PMD Process

PiBond dielectrics

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Product kFTK

[µm]S%

SG

products3.5-4.1 0.6-1.6 3-9

SX

products2.9 2.0 <5

ST

products3.8 0.5 ~15

• Products designed for easy insertion into Partial Etch Back

and Total Etch Back planarization processes

• Excellent etch back planarization selectivity to CVD SiO2.

• Several different dielectric constants

• Designed for flawless gap fill

• Wide thickness range – up to 2µm CVD-like SOD!

Lo

ca

lPla

na

rizatio

n

Double coated SG200

Single coated SG200

Single coated SG300

Single coated SG40011

100 nm gap 300 nm gap30 nm gap

Gap fill

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SX 800P – patternable high temperature siloxane

• High sensitivity at low doses

• Developed with industry standard 2.38w%

TMAH

• Resolution 4:1

• Up to 2µm thickness, 475C cure

SX 800P B12 25 mJ SX 800P B12 100 mJSX 800P B12 50 mJ SX 800P B12 75 mJ

4µm via open 7.5µm via open 8.5µm via open 9µm via open

*Softbake: 100°C/1min, Exposure: Karl Suss MA45, PEB 100°C/1min, Develop 2.38w% TMAH 30sec.

5µm lines / spaces, 52° view

PiBond patterning materials

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Traditional hard masks Metal oxide hard masks

Si-HM and SiBARC

SOC and novel MOx-HM

DRIE and TSV etch hard mask

Novel MOx materials

litho underlayer offering

PiBond litho solutions.

Siloxane and metal oxide chemistries for reverse

patterning schemes

Spin On Carbon for high and low temperature

process schemes

Node shrink through extremely conformal high

silicon content polymers

High silicon content hard masks

Silicon anti reflective coatings with variable optical

constants for 248nm and 193nm patterning

Extension of SAP metal oxide hard mask

technology toward EUV lithography

PiBond SH Series Si-BARC and Si-HM have served the industry for a decade

New Products:

- Reverse planarizing and conformal coatings benefit: ALD replacement for reverse, SADP processes

- Novel metal oxide materials for EUV lithography benefit: litho stack simplification

- High temperature SOC benefit: ACL replacement for increased throughput

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SH ProductsSilicon Hard Masks

Case examples: SH 193 - SH 248D

Material Cure n k Si-content

SH 248D 230°C 1.52 – 1.56 0.34 – 0.42 31 – 33%

SH 193D 230°C 1.68 – 1.73 0.35 – 0.43 37 – 39%

SH 193U 230°C 1.63 – 1.67 0.13 – 0.15 41 – 44%

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SH 248D shows stable etch rates as a function of:

bake temperature

aging

product bottle warm up

Bake Condition Etch rate [nm/min]

200°C / 90s 195

220°C / 90s 195

230°C / 90s 194

240°C / 60s 195

Sample Etch rate [nm/min]

+4C, 3 months 185

+23C, 3 months 188

+40C, 3 months 193

Warm up time Etch rate [nm/min]

0h 196

3h 194

24h 198

Table 2. Etch rate as a function of aging of material.

Table 1. Etch rate as a function of bake temperature.

Table 3. Etch rate vs. bottle warm up.

Reference etch rates:

PECVD SiO2: 84nm/min

LPCVD (770C) Si3N4: 103nm/min

SH 248D – on wafer performance

• CLk-888 (JTBaker) and N-SC200 (Nagase) strippers confirmed to becompatible with SH 248D

• Both strippers compatible with low k dielectric and damascene-Cu

• Strippers show no effect to CVD SiO2 and SiNx

Figure. SEM of N-SC200 during strip test.

Stripper

Cu etch rate

[nm/min]

@ 40C

BD-II etch

rate

[nm/min]

@ 40C

PECVD SiO2

etch rate

[nm/min]

@ 40C

SiNx

etch rate

[nm/min]

@ 40C

CLk-888 3.0 <0.1 0.0 0.0

N-SC200 0.8 <0.1 0.0 0.0

N-SC206 0.2 <0.1 0.0 0.0

N-SC207 0.2 <0.1 0.0 0.0

Figure. Film removal rate with different strippers.

SH 248D – strip and clean

• Metal-oxide hard mask chemistry comprises patented chemistry

• Proprietary methodology to control metal, metalloid, oxygen and carbon ratios

• Adjustable optical properties for demanding resolution requirements(e.g. EUV, 193nm, 248nm)

• Adjustable etch selectivity through hard mask chemistry – up to >1:100,000 to Si

• Strip and clean fairly adjustable according to process and device requirements

SAP Products – outline

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SEM images from SAP 110 test

SAP Products – etch case results

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PiBond approach to EUV materials has been to extend SAP 100 chemistry platform

Potential use: as resist, as underlayer or as a reverse tone material

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MOx-SiOx hard masks development

MOx nanoparticles Mixed Metal Oxides

Main benefits

minimized organic content

better etch selectivity to organic layers

no particle size limitation yields improved LER/LWR

minimized organic content

better etch selectivity

improved sensitivity

DISCLAIMER

The Presentation

This presentation is based on internal Company reports and technical information believed to be reliable, but neither the Company, its directors or employees make any

representation or warranty to its accuracy, completeness or currency and, as such, no reliance may be placed for any purpose whatsoever on the information contained in

this presentation. The Company accepts no obligation to correct or update the information or opinions expressed in it. Opinions expressed are subject to change without

notice and accurately reflect the views of the Company at the time of presenting. Save in the case of fraud, no liability is accepted for any loss, cost or damage suffered or

incurred as a result of the reliance on such information, opinions or beliefs.

This presentation may contain certain forward-looking statements. These statements relate to future events or future performance and reflect management’s expectations

regarding the Company’s growth, results of operations, performance and business prospects and opportunities. Such forward-looking statements reflect management’s

current beliefs, are based on information currently available to management and are based on reasonable assumptions as of this date. No assurance, however, can be

given that the expectations will be achieved. A number of factors could cause actual results to differ materially from the projections, anticipated results or other

expectations expressed in this presentation. While the Company makes these forward-looking statements in good faith, neither the Company, nor its directors and

management, can guarantee that the anticipated future results will be achieved.

This presentation is confidential and is being supplied to you for your own information. It may not directly or indirectly be reproduced, further distributed to any person or

published, in whole or in part, for any purpose whatsoever.

Thank You!

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