F50Thin-Film Analyzer

The Filmetrics Advantage • 24-hour Support• Built-in online diagnostics• Standalone software included• Sophisticated history function for saving, reproducing, and plotting results

Free Live Demo/Support A live demo is only a few mouse clicks away! Contact us and an applications engineer will demonstrate how easy it is to make thin-film measurements - viewable right from your computer!

Automated Thin-Film Thickness Mapping SystemThin-film thickness of samples up to 450 mm in diameter are mapped quickly and easily with the F50 advanced spectral reflectance system. The motorized r-theta stage moves automatically to selected measurement points and provides thickness measurements as fast as two points per second. The F50 has the same precision high-lifetime stage that performs millions of measurements in our production systems.

Choose one of the dozens of predefined polar, rectangular, or linear map patterns, or create your own with no limit on the number of measurement points. The entire desktop system is set up in minutes and can be used by anyone with basic computer skills.

Example Layers Virtually any smooth, non-metallic film may be measured. Examples include:

SiO2 SiNX DLC Photoresist Polymer Layers Polyimide Polysilicon Amorphous Silicon

LIQUID CRYSTAL DISPLAYS • Cell Gaps• Polyimide• ITO

SEMICONDUCTOR FABRICATION • Photoresist • Oxides/Nitrides/SOI • Wafer Backgrinding/Packaging

MEMS • Photoresist• Silicon Membranes• AlN/ZnO Thin-Film Filters

OPTICAL COATINGS • Hardness Coatings • Anti-Reflection Coating• Filters

Applications

F50Thin-Film Analyzer

Filmetrics, Inc. 3560 Dunhill St., Ste. 100, San Diego, CA 92121

Tel:(858)573-9300 Fax:(858)573-9400 www.filmetrics.com

Specifications subject to change without notice ©2013 Filmetrics, Inc. Rev. 11.13 Printed in the USA

F50-UVX F50-UV F50 F50-EXR F50-NIR F50-XT F50-XXTThickness Measurement Range*: 5 nm-250 µm 5 nm-40 µm 20 nm-70 µm 20 nm-250 µm 100 nm-250 µm 0.2 μm-450 μm 5 μm-3 mmMin. Thickness to Measure n and k*: 50 nm 50 nm 100 nm 100 nm 500 nm 2 μm 100 μmWavelength Range: 200-1700 nm 200-1100 nm 380-1050 nm 380-1700 nm 950-1700 nm 1440-1690 nm 1520-1580 nmAccuracy*: The > of 0.4% or 1 nm 1 nm 2 nm 2 nm 3 nm 5 nm 50 nmPrecision1: 0.1 nm 0.2 nm 1 nm 5 nmStability2: 0.07 nm 0.12 nm 1 nm 5 nmSpot Size: Standard 1.5 mm (Smaller Available) 600 μm 25 μm

Light Source Lamp MTBF: D2: 2000 hr, Halogen: 1200 hr Halogen: 1200 hr >10 years

200 mm Chuck 300 mm ChuckSample Size: ≤ 200 mm diameter ≤ 300 mm diameter

Speed (Typical with Vacuum Chuck):

5 points - 5 sec.25 points - 14 sec.56 points - 29 sec.

5 points - 8 sec.25 points - 21 sec.56 points - 43 sec.

* Material dependent ¹ 1σ of 100 measurements of 500 nm SiO2-on-Si. Average of 1σ over 20 successive days.2 2σ of daily average of 100 measurements of 500 nm SiO2-on-Si over 20 successive days.3 Windows Vista – Windows 8(64-bit) and a DirectX 10 graphics card required to render 3D wafer maps

GeneralPower Requirements: 100-240 VAC, 50-60 Hz, 230 Watts

Dimensions: 14W x 19D x 11H (in)35.5W x 48.3D x 28H (cm)

Weight: 35 lbs. (16 kg)

Computer RequirementsInterface: USB 2.0

Operating SystemPC3: Windows XP(SP2) - Windows 8(64-bit)Mac: OS X Lion/Mountain Lion running Parallels