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Fabrication and characterization of one-dimensional solid-state model systems on silicon

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Fabrication & Characterization of 1D Solid-State Model Systems on Silicon F ONDS NATIONAL SUISSE S CHWEIZERISCHE N ATIONALFONDS F ONDO NAZIONALE SVIZZERO S WISS N ATIONAL S CIENCE F OUNDATION FN NF S François Bianco
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Page 1: Fabrication and characterization of one-dimensional solid-state model systems on silicon

Fabrication & Characterization of 1D

Solid-State Model Systems on Silicon

FONDS NATIONAL SUISSE

SCHWEIZERISCHE NATIONALFONDS

FONDO NAZIONALE SVIZZERO

SWISS NATIONAL SCIENCE FOUNDATION

FN NFS

François Bianco

Page 2: Fabrication and characterization of one-dimensional solid-state model systems on silicon

Fabrication & Characterization of 1D

Nanolines on Silicon

FONDS NATIONAL SUISSE

SCHWEIZERISCHE NATIONALFONDS

FONDO NAZIONALE SVIZZERO

SWISS NATIONAL SCIENCE FOUNDATION

FN NFS

François Bianco

Page 3: Fabrication and characterization of one-dimensional solid-state model systems on silicon

Motivations

Page 4: Fabrication and characterization of one-dimensional solid-state model systems on silicon

Time

Moore's Conjecture

"The number of transistors incorporated in a chip will approximately double every 24 months." Gordon Moore, Intel co-founder

108

104

106

Nu

mb

er

of

tra

ns

isto

rs

Page 5: Fabrication and characterization of one-dimensional solid-state model systems on silicon

Time

Moore's Conjecture

"The number of transistors incorporated in a chip will approximately double every 24 months." Gordon Moore, Intel co-founder

108

104

106

Nu

mb

er

of

tra

ns

isto

rs

Pictures, CC-BY-SA Wikipedia contributors

1980 2010

Page 6: Fabrication and characterization of one-dimensional solid-state model systems on silicon

Size Limit

mm ŵmø h

air

s

nm

1947 2012

© Intel newsroom 3D transistor & Nature Nanotechnology 7, 242 (2012)

cells

Page 7: Fabrication and characterization of one-dimensional solid-state model systems on silicon

Size Limit

mm ŵmø h

air

s

nm

1947 2012

© Intel newsroom 3D transistor & Nature Nanotechnology 7, 242 (2012)

cells

"What would happen if we could arrange the atoms one by one the way we want them?" Richard Feynman

Page 8: Fabrication and characterization of one-dimensional solid-state model systems on silicon

Chain, CC-BY BotheredByBees (Flickr)

Atom Chainsor nanolines/nanowires

Page 9: Fabrication and characterization of one-dimensional solid-state model systems on silicon

Nanowire's Applications

Nature Photonics 7, 306 (2013)Adv. Mater. (2013)

Adv. Mater. 15, 997 (2003)

Angew. Chem. 120, 4597 (2008)

APL 85, 6389 (2004)

Nature Nanotechnol. 2, 626 (2007)

Nature Nanotechnol. 7, 242 (2012)

Memory

Single-atom transistor

Solar cell

Gas detector

Catalyst

Vertical nanowires, © EPFL Press

Nature Biotechnol. 23, 1294 (2005)

Proteins detector

Page 10: Fabrication and characterization of one-dimensional solid-state model systems on silicon

Open Questions

Fabrication? Properties?

Lego bricks, CC-BY-SA dbesham (Flickr)

Page 11: Fabrication and characterization of one-dimensional solid-state model systems on silicon

Presentation Outline

Physics in One Dimension ?

Measurement & Synthesis of Nanolines

Nanolines on Silicon:

Bi nanolines Haiku stripes Haiku Dangling

Bond Rows

Page 12: Fabrication and characterization of one-dimensional solid-state model systems on silicon

Physics in One

Dimension

One-dimensional CC-BY-NC-ND (with permission) Andredoreto (Flickr)

Page 13: Fabrication and characterization of one-dimensional solid-state model systems on silicon

One Dimension

Trac Jam,, CC-BY-SA Andreas (Flickr)

Page 14: Fabrication and characterization of one-dimensional solid-state model systems on silicon

1D Physics

CC-BY-NC-ND (with permissions) Water drop, Beauty Eye & Pipes, e.asphyx (Flickr)

Fermi Liquid Tomonaga-Luttinger Liquid

2D 1D

Quasiparticles Collective excitations

Page 15: Fabrication and characterization of one-dimensional solid-state model systems on silicon

1D Physics

CC-BY-NC-ND (with permissions) Water drop, Beauty Eye & Pipes, e.asphyx (Flickr)

Fermi Liquid Tomonaga-Luttinger Liquid

2D 1D

Quasiparticles Collective excitations

Spin-charge separation

Power laws

Peierls distortion

Predictions:

Page 16: Fabrication and characterization of one-dimensional solid-state model systems on silicon

a

2a

Peierls Distortion

En

erg

ie

EF

-π/2a π/2a

En

erg

ie

EF

-π/2a π/2a

Wavevector

Wavevector

Insulator

Metallic

Page 17: Fabrication and characterization of one-dimensional solid-state model systems on silicon

Peierls Distortion Example

293 K

(20°C)

4.7 K

(-268°C)

Insulator

Platinium on Ge(001)

Surf. Sci. 602, 1731 (2008)

Metallic

Page 18: Fabrication and characterization of one-dimensional solid-state model systems on silicon

Can We See

Nanostructures?

Page 19: Fabrication and characterization of one-dimensional solid-state model systems on silicon

Scanning Pr e

Braille, CC-BY-SA kainita (Flickr)

IFeedback

Scanning tunneling microscope(STM)

Page 20: Fabrication and characterization of one-dimensional solid-state model systems on silicon

2 nm

Monohydride Silicon (001)

Scanning Probe

IFeedback

Scanning tunneling microscope(STM)

Page 21: Fabrication and characterization of one-dimensional solid-state model systems on silicon

STM Laboratory

Low Temperature

77 K (­196°C)

Ultra-High Vacuum

(UHV, ~ 5×10-11 mbar)

Page 22: Fabrication and characterization of one-dimensional solid-state model systems on silicon

Nanolines

S nt es s

❚❤e ❯n✐✈ersa❧ ▲a❜e❧✱ ❈❈✲❇❨✲N❈ ❘an❞a❧❧ ▼unroe ✭❳❑❈❉ n➦✶✶✷✸✮

Page 23: Fabrication and characterization of one-dimensional solid-state model systems on silicon

Fabrication Methods

Top-down

(Lithography)

Page 24: Fabrication and characterization of one-dimensional solid-state model systems on silicon

Fabrication Methods

Top-down

(Lithography)

Bottom-up

(Self-assembly)

Page 25: Fabrication and characterization of one-dimensional solid-state model systems on silicon

❱icinal Surfaces

Stairs, courtesy Sylvain Masson (Flickr)

Page 26: Fabrication and characterization of one-dimensional solid-state model systems on silicon

Vici♥al Surfaces

❙tairs, courtes② ❙②l�ai✁ Masso✁ (❋lic❦r)

Co o✂ ✄ici✂al Cu(111)

P☎✆ ✽7, 16✹06(☎) (✝01✞)

Page 27: Fabrication and characterization of one-dimensional solid-state model systems on silicon

2 nm

dimer row

[110]

[110]

Buckled c(4×2)

Flip-flop (2×1)

Silicon (001)

Buckled c(4×2)

Flip-flop (2×1)

Sid

e v

iew

To

p v

iew

Sid

e v

iew

To

p v

iew

Page 28: Fabrication and characterization of one-dimensional solid-state model systems on silicon

Synthesis Principle

Page 29: Fabrication and characterization of one-dimensional solid-state model systems on silicon

Synthesis Principle

Seeds, CC-BY-NC-SA CIMMYT (Flickr)

Page 30: Fabrication and characterization of one-dimensional solid-state model systems on silicon

Synthesis Principle

Seeds, CC-BY-NC-SA CIMMYT (Flickr)

Bismuth

Bismuth, Free Art Alchemist-hp (Wikipedia)

Page 31: Fabrication and characterization of one-dimensional solid-state model systems on silicon

Synthesis Principle

Seeds, CC-BY-NC-SA CIMMYT (Flickr)

Bismuth

Bismuth, Free Art Alchemist-hp (Wikipedia)

Rows of Red, CC-BY-NC-ND (with permission) sea turtle (Flickr)

580°C

Page 32: Fabrication and characterization of one-dimensional solid-state model systems on silicon

Bismut

Nano nes

Page 33: Fabrication and characterization of one-dimensional solid-state model systems on silicon

Con tant Width

✺ n♠ 2 n♠

4 ✟i di✠❡r✡ wid❡☛o✉☞✌❡ ❝hain o❢ ✍i di✠❡r✡

Page 34: Fabrication and characterization of one-dimensional solid-state model systems on silicon

Tunable Density

20 nmLow High

Page 35: Fabrication and characterization of one-dimensional solid-state model systems on silicon

Micro✎eters Long

1 μm 50 nm

❩oo✏

Page 36: Fabrication and characterization of one-dimensional solid-state model systems on silicon

sid

e v

iew

top

vie

w

Haiku Structure

BiBi

5

75

7

5

J.H.G Owen et al. J. Mater. Sci. 41, 4568 (2006)

Si

Page 37: Fabrication and characterization of one-dimensional solid-state model systems on silicon

Bi-Nanolines Advantages

Self-assembled

Micrometers long

Tunable density

Potential template

Well know structure

On a semiconductor

Flat surface

Fixed width

Page 38: Fabrication and characterization of one-dimensional solid-state model systems on silicon

Haiku Stripes

Appl. Phys. Lett. 97, 093102 (2010)

& Phys. Rev. B 84, 35328 (2011)

Page 39: Fabrication and characterization of one-dimensional solid-state model systems on silicon

Synthesis

Hydrogenation

380°C

Page 40: Fabrication and characterization of one-dimensional solid-state model systems on silicon

sid

e v

iew

2 nm

✑onoh✒✓ri✓e Silicon

H H H H

Page 41: Fabrication and characterization of one-dimensional solid-state model systems on silicon

10 nm 1 nm

Haiku Stripes

Page 42: Fabrication and characterization of one-dimensional solid-state model systems on silicon

Hai✔u ✕tripe ✖o✗✘✙

✚i✚i

✛ i

✜ e ✢

iew

5

75

7

5 ✣i

Page 43: Fabrication and characterization of one-dimensional solid-state model systems on silicon

Haiku Stripe Model

✤ i

✥ e ✦

iew

5

75

7

5

HH H H H

H

Si

Page 44: Fabrication and characterization of one-dimensional solid-state model systems on silicon

Haiku Stripe Model

sid

e v

iew

5

75

7

5

HH H H H

H

Si

Field, CC-BY-SA skrewtape (Flickr)

Page 45: Fabrication and characterization of one-dimensional solid-state model systems on silicon

Haiku Stripe Model

sid

e v

iew

5

75

7

5

HH H H H

H

Si

Field, CC-BY-SA skrewtape (Flickr) Bulbs, CC-BY-SA, brewbooks (Flickr)

Page 46: Fabrication and characterization of one-dimensional solid-state model systems on silicon

How can we be sure that itis a silicon only structure?

Page 47: Fabrication and characterization of one-dimensional solid-state model systems on silicon

X-Ray Photospectroscopy

EγX-ray

e-Ekin

Spectrometer

Ekin

Core levels

Valence band

Φ

e-

Binding energy

(XPS)

Page 48: Fabrication and characterization of one-dimensional solid-state model systems on silicon

X-Ray Photospectroscopy

Binding energy [eV]

[Ele

ctr

on

co

un

ts/s

]

O C B O

Si Si

Si

Si

Si

Clean Si monocrystal

Page 49: Fabrication and characterization of one-dimensional solid-state model systems on silicon

X-Ray Photospectroscopy

Binding energy [eV]

[Ele

ctr

on

co

un

ts/s

]

O C B O

Si Si

Si

Si

Si

Clean Si monocrystal

Bi

Bi

Bi

Bi

Bi-exposed sample before H exposure

Bi

Page 50: Fabrication and characterization of one-dimensional solid-state model systems on silicon

X-Ray Photospectroscopy

Binding energy [eV]

[Ele

ctr

on

co

un

ts/s

]

O C B O

Si Si

Si

Si

Si

Clean Si monocrystal

Bi

Bi

Bi

Bi

Bi-exposed sample before H exposure

Bi

Bi-exposed sample after H exposure

Page 51: Fabrication and characterization of one-dimensional solid-state model systems on silicon

X-Ray Photospectroscopy

Binding energy [eV]

[Ele

ctr

on

co

un

ts/s

]

O C B O

Si Si

Si

Si

Si

Clean Si monocrystal

Bi

Bi

Bi

Bi

Bi-exposed sample before H exposure

Bi

Bi-exposed sample after H exposure

Page 52: Fabrication and characterization of one-dimensional solid-state model systems on silicon
Page 53: Fabrication and characterization of one-dimensional solid-state model systems on silicon

STM SimulationsIn collaboration with Prof. D. Bowler UCL & LCN

Relaxed structure

STM simulation

Charges densities

Page 54: Fabrication and characterization of one-dimensional solid-state model systems on silicon

1 nm

Filled States

simulation

experiment

High current(200 pA)

simulation

experiment

Low current(80 pA)

Page 55: Fabrication and characterization of one-dimensional solid-state model systems on silicon

simulation

experiment

Cross Section

1.54 nm

70

pm

5 pm

He

igh

t

Width

simulation

oset -10 pm

experiment

1 nm

Page 56: Fabrication and characterization of one-dimensional solid-state model systems on silicon

Empty States

+2.5 V

Simulations+ 2.5 eV

Data

Page 57: Fabrication and characterization of one-dimensional solid-state model systems on silicon

Empty States

+2.5 V

Simulations+ 2.5 eV

Data

3 nm

+2.0 V

1 nm

+ 1.0 eV

Page 58: Fabrication and characterization of one-dimensional solid-state model systems on silicon

Charge Densities

3 nm

Sid

e v

iew

Page 59: Fabrication and characterization of one-dimensional solid-state model systems on silicon

What else?

Page 60: Fabrication and characterization of one-dimensional solid-state model systems on silicon

Air Resistant

Exposed to air for 25 min

3 nm

Page 61: Fabrication and characterization of one-dimensional solid-state model systems on silicon

Micrometer Long

200 nm 50 nm

Page 62: Fabrication and characterization of one-dimensional solid-state model systems on silicon

Self-assembled

Stable to 400°C

(in UHV)

Micrometer long

Properties Summary

Tunable density

Inert in air

Page 63: Fabrication and characterization of one-dimensional solid-state model systems on silicon

Self-assembled

Stable to 400°C

(in UHV)

Micrometer long

Properties Summary

Tunable density

Inert in air

Delocalized

electronic state Perfectly matching

model

Page 64: Fabrication and characterization of one-dimensional solid-state model systems on silicon

Self-assembled

Stable to 400°C

(in UHV)

Micrometer long

Properties Summary

Tunable density

Inert in air

Delocalized

electronic state Perfectly matching

model

Contacting

Probing 1D physics&

Page 65: Fabrication and characterization of one-dimensional solid-state model systems on silicon

What about Physics?

ContactingE

lectro

de

Clamp

Silic

on

1 mm

Mask deposition

Page 66: Fabrication and characterization of one-dimensional solid-state model systems on silicon

20 nm

Markers & Contacts

APL 100, 103103 (2012)

Au markers

Gold depositionExample

Page 67: Fabrication and characterization of one-dimensional solid-state model systems on silicon

Optical measurement

Doping

Spectroscopy

I(+1.5 V)

What about Physics?

2 nm

Outlook:

Page 68: Fabrication and characterization of one-dimensional solid-state model systems on silicon

1D Dan l n

Bon s Rows

❆✧★ ◆ano (2013)

Page 69: Fabrication and characterization of one-dimensional solid-state model systems on silicon

Hydrog✩nation

42✵✪✫

Synthesis

Page 70: Fabrication and characterization of one-dimensional solid-state model systems on silicon

Assemb✬y Interests

Molecular molds

Atom assembly

Annu. Rev. Phys. Chem. 60, 193 (2009)

PRL 91, 136104 (2003)

Gallium

Phosphine

Both examples were

sequentially made

Page 71: Fabrication and characterization of one-dimensional solid-state model systems on silicon

Haiku DB ✯ows

H H

π* πsid

e v

iew

HydrogenatedSi dimer

Dangling

Bond (DB)

Page 72: Fabrication and characterization of one-dimensional solid-state model systems on silicon

10 n

H✰B Rehydrogenated

Page 73: Fabrication and characterization of one-dimensional solid-state model systems on silicon

Central Dimer Model✳3

D v

iew

Sid

e v

iew

HH H

H

Buckled Flat

HH H

H

Page 74: Fabrication and characterization of one-dimensional solid-state model systems on silicon

H Binding Energy

H atom on Si(001)

4.37 eV

+0

.16

+0

.13

-0.1

0

-0.1

5

+

-

More stable

Less stable

EB

/ H

[e

V]

sid

e v

iew

HH H

H

Buckled Flat

HH H

H

-0.1

5

+0

.13

-0.1

0

+0

.16

From DFT calculations

Page 75: Fabrication and characterization of one-dimensional solid-state model systems on silicon

Missing Hydrogen

6% Si terraces

% of dehydrogenated Si atoms

Page 76: Fabrication and characterization of one-dimensional solid-state model systems on silicon

Missing Hydrogen

6% Si terraces

% of dehydrogenated Si atoms

85

% Haiku stripe

Page 77: Fabrication and characterization of one-dimensional solid-state model systems on silicon

Alternating Flat Dimers

+ 1.8 V - 1.8 V

Page 78: Fabrication and characterization of one-dimensional solid-state model systems on silicon

Alternating Flat Dimers

+ 1.8 V - 1.8 V

Spin-polarized structure?

Test at room temperature

Outlook:

Page 79: Fabrication and characterization of one-dimensional solid-state model systems on silicon

Properties Summary

Micrometer long

Highly reactive template

Self-assembled

Known structure

Page 80: Fabrication and characterization of one-dimensional solid-state model systems on silicon

Properties Summary

Micrometer long

Highly reactive template

Self-assembled

Known structure

Assembling 1D molecular or atomic chains

Page 81: Fabrication and characterization of one-dimensional solid-state model systems on silicon

Con l s on

Page 82: Fabrication and characterization of one-dimensional solid-state model systems on silicon

✴✻mmary

Self-assembly

Lego bricks, CC-BY-SA dbesham (Flickr)

Haiku stripes Haiku DB rows

Bismuth nanolines

Page 83: Fabrication and characterization of one-dimensional solid-state model systems on silicon

Summary

Haiku stripes Haiku DB rows

Page 84: Fabrication and characterization of one-dimensional solid-state model systems on silicon

FONDS NATIONAL SUISSE

SCHWEIZERISCHE NATIONALFONDS

FONDO NAZIONALE SVIZZERO

SWISS NATIONAL SCIENCE FOUNDATION

FN NFS

✼✾anks

& ❏❛✿❀s ❁●❁ ❖we❂ ❃❄❣❅❊❂ ❍❁ ■öster

◗❲oup photo, ➞ ❬❭ ❪❫❴❵❥♦s

Page 85: Fabrication and characterization of one-dimensional solid-state model systems on silicon

"Atomic hashi.A pair of Bismuth dimers,On Silicon core.

Remove all Bismuth,Silicon in silicon.Atomic template."

James H.G. Owen

5

75

7

5

HH H H H

H

Si


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