FLEX booklet cover & back rev4 - RFMW Ltd. · 2016-06-29 · 220X,222X,224X 220T,222T,224T...

XSYSTOR Inc.18000 STUDEBAKER RD

SUITE 700 MS 723

CERRITOS CA 90703

PH/FAX: 888-968-7755

EMAIL: [email protected]

WEBSITE: XSYSTOR.COM

GaN Solutions at your fingertips

Sequencers, Controllers, and Switches for GaN Transistors

CATALOG 2016

Rev 2

System Requirements or Applica ons100 Series

Controllers

200 Series

Controllers

300 Series

Switches

400 Series

Switches

600/700

Eval Board

I prefer to use nega ve analog input for gate bias

I prefer to use posi ve analog input for gate bias

What gate thresholds are available for auto-shutdown to specify with model number

-2.6V-2.0V-1.4V

-2.6V-2.0V-1.4V

I only have one power supply to the transistor100X100T100L

200X200T200L

I have an addi onal nega ve supply available122X122T122L

222X222T222L

I have both nega ve and logic supply available124X124T124L

224X224T224L

I need both drain and gate dynamic switching100X100T100L

200X200T200L

I do not need gate switching120X,122X,124X120T,122T,124T120L,122L,124L

220X,222X,224X220T,222T,224T220L,222L,224L

Overall height must be less than 0.25” [6.35mm]100L120L,122L,124L

200L220L,222L,224L

410L420L430L

I need pins for manual solder & moun ng100T120T,122T,124T

200T220T,222T,224T

410T420T430T

I prefer standard configura on for solder reflow100X120X,122X,124X

200X220X,222X,224X

410X420X430X

My transistor has CW opera on at > 5msec period 410X410T410L

My transistor has Pulsed opera on at < 5msec period with typical pulse width of 500usec

332P362P392P

420X420T420L

I have Rise/Fall Time requirements of 200nsec &total propaga on me of 500nsec in pulsed mode

335CT365CT395CT

430X430T430L

I want to use mul ple switches with one controller

I want to lay the module flat or slanted down to 0.10” [2.54mm] height

100X

120X,122X,124X

200X

220X,222X,224X

410X420X430X

Applica on Checklist: A place to start your design….

INDEX PAGE

100L, 100X, 100T Series Controllers. Negative Input Bias 2

200L, 200X, 200T Series Controllers. Positive Input Bias 4

300PNC Series CMOS Power Switches 6

400L, 400X, 400T Series Dual MOS Mini Switches 7

600E Series Evaluation Boards. Compact, Drop-In Type 9

700E Series Evaluation Boards. Removable Modules 11

XAN-2 App Note. Connecting Controller & Switch 13

Product Selection Guide 18

Product Outlines and Land Patterns 19

XAN-4 App Note. Mounting Schemes for the Controller 23

XAN-6 App Note. Converting Switch from Pulsed to CW 25

To our valued customers

Thank you for your interest in XSYSTOR products. We make

peripheral circuits for the GaN device. They are sequencers,

controllers, modulators, and switches that are frequency neutral

and can operate devices in L, S, C, X, Ku & Ka-bands. We offer

solutions for Broadband Amplifiers, Radar, Milcom, Satcom,

Point-to-point radio, and Telecom. In addition to our standard

products, our principals have 25 years of RF/Microwave amplifi-

er design experience to offer custom products as well.

A Quick Summary of our Products…...

Electrical Benefits of the Controller

It is a sequencer. The primary job is to protect the GaN device from

any order of supply and signal voltage turn-ON.

It stabilizes the transistor. GaN maybe superior but it has a flaw; a

tendency to oscillate at low voltages. To avoid instability when ramp-

ing or pulsing the drain, the gate is allowed to switch ON & OFF

ONLY if drain voltage has reached a safe level. All this is happening

from one TTL signal enable.

Operate your GaN from either gate or drain. They have independent

control, so you choose based on your application or preference.

It’s a modulator. You can do pulse-width modulation with the gate or

dynamic envelope switching with the drain.

Got Negative? No matter. A single power supply is all that’s needed.

Onboard inverter produces -4.3V at 30mA. If not enough, then attach

another negative source and boost to -6V at 100mA.

One for all, and all for one! A single controller can switch several

GaN devices at once, with about 200mA of total switch loads. How-

ever, use op-amp or LDO buffers at each gate for best results.

Very fast! It can do <<200 nsec Rise, Fall, or Propagation times

when used together with our power CMOS Switch products.

Mechanical Benefits of the Controller

Half the size of a nickel? At ¼ square inch, it can fit in the most de-

manding footprint and height restriction. Mount it upright, slanted, or

flat & buried.

Place it anywhere, any direction. Unlike our competitors, our in-line,

castellated port design makes it possible to orientate the module360° with no printed line crossover.

Top Ten reasons to Buy versus Build smart circuits for GaN

10. A bloated Materials liability needs a diet. Hand off the

responsibility of implementation to an experienced company. No

one enjoys documenting 100+ new parts for just one project.

With the pace of technology, your reels of parts in the stockroom

will be waiting for auction.

9. Major distraction to core-competency. With the excep-

tion of large companies having cross-functional teams, many RF

houses will struggle with obtaining analog expertise or transition

smoothly to GaN technology. They can just buy now and develop

later.

8. Proof-of-concept in a flash. Buying something that al-

ready works rather than trying to figure it out from scratch is a no-

brainer, especially when potential for production is few or some-

where in a distant future.

7. Best practices have been figured out. Vendors regularly

show continuous improvements on their niche product, and they

can serve as free consultants for many applications.

6. Very difficult to duplicate. We used the most aggressive

IPC standards for board design and fit everything in the size of a

nickel. Miniaturization promotes compatibility to several GaN

platforms in the industry. Sure, someone can build something

similar to a size of a credit card or iPhone.

5. Gambling with your ROI. Reinventing the wheel requires

spending lots of time, effort, and money to set-up a team which

would take on unnecessary risks that may end up with lousy

return-on-investment. How many projects have we all logged that

went nowhere?

4. Save your budget for the important stuff. Up-front costs

for buying are very low and obvious. However, in-house builds

have huge up-front costs that have hidden maintenance costs

buried in the operational budget for years.

3. Ownership of design. We are a consultancy that can

partner with our customers to integrate our products to their sys-

tems. Eventual ownership of our products can be secured for

long-term planning.

2. Slow and steady don’t win races, period. Your customers

will be much more impressed and will give extra attention to the

first demonstrator. What you present becomes a benchmark with

favorable comparisons than later participants. Why not get a

competitive advantage against the big players?

1. All Engineers can get in on the fun! The number onereason for workplace fulfillment is the opportunity to grow profes-sionally. The early stages of GaN technology is a boon to princi-pals and designers. But this club is not exclusive. Applications,Test, and Manufacturing Engineers can showcase their wareswith their own design to streamline operations. Dropping in ourmodules is super easy!

1

WWW.XSYSTOR.COM, 18000 STUDEBAKER RD SUITE 700 MS723 CERRITOS CA 90703, PHONE/FAX: 888-968-7755, EMAIL: [email protected]

PRODUCT FLYERNovember 2015

General Descrip on

The 100 Series GaN Controller is amul -func onal circuit capable of opera ng and protec ng all deple on-mode transistors. The non-inver ng analog input accepts nega ve control voltage to produce nega ve gate bias voltage. It has universal features thatallows 360° board placement withli le or no line crossovers in the motherboard. A single power supplyis enough for the 100 to provide dy-namic control, but it will also acceptnega ve power sources for current boost. Li le or no filtering is needed in heavy RF environments. The 100works seamlessly with 300 and 400Series MOS switches that have com-pact footprints for loca ng near the transistor drain choke. Demonstra-tors and Kits containing combina ons of Bias Controllers and MOS Switchesare available for evalua on and fast prototyping.

100L SeriesGaN Controller Module, Low ProfileSMT, Non-Inver ng (Nega ve Analog Input)

Protects GaN devices from any PowerON/OFF sequence of internal andexternal supplies.

Generates own Nega ve and Logic voltages from <80V supply OR ac-cepts them for current boost.

Gate Voltage Bias has Fixed Gate ORPulsed Gate configura on.

Drain-Gate switching features Master-Slave PWM OR Independent Controlat gate or drain of device.

Output drive to external MOSFETswitching circuits comes in TTL OROpen Drain (<300mA).

Temperature compensa on is ac -vated from either local OR remotetemp sensor feedback.

>25dB EMI/RFI Rejec on at all I/O ports except from auxiliary taps.

<500 nsec total delay from V_Logic toV_Drain with applicable switch.

Pins have 0.06” [1.52 mm] pitch.

Available in tape & reel.

RoHS* Compliant

Features

ACTUAL SIZE

Specifica on Snapshot

Supply (+) Voltage +80 V

Supply (-) Voltage 0 V

Output ON Fall Time, Active Low 120 ns

Output OFF Propagation Delay 80 ns

Logic Voltage +4.0 V

Output ON Propagation Delay 120 ns

Analog (-) Adjust Voltage 0 V

Output Drive Voltage, Open Drain +60 V

Output Drive Current, Open Drain 300 mA

+28 V

-6 V

-0.3 V

-6 V

0 V

Output OFF Rise Time, Active Low 80 ns

Gate ON Propagation Delay 160 ns

Gate ON Rise Time 60 ns

Gate OFF Propagation Delay 160 ns

Gate OFF Fall Time 60 ns

Soldering Temp (10 sec) +260°C

Operating Temperature -40°C +85°C

Storage Temperature -65°C +150°C

Gate Bias Threshold Shutdown -2.6 V -1.4 V

Typical Connec on Diagram

Ordering Informa on

Propagation Delay is measured from 90% of TTL to10% of Open Drain Output with pull-up resistor. Rise/Fall Times are measured at 10% and 90% of signal.Both measurements are summed for total time.

100L02R6

100L02R0

100L01R4

UNIVERSAL GaN CONTROLLER,NEGATIVE ANALOG INPUT, SIN-GLE DC (<80V) SUPPLY, VGSSHUTDOWN AT -2.6V, -2.0V, OR-1.4V. INDEPENDENT OR SE-QUENTIAL SWITCHING OF DRAINAND GATE

120L02R6

120L02R0

120L01R4

100 WITH NO GATE SWITCHINGCAPABILITY

124L02R6

124L02R0

124L01R4

100 WITH NO GATE SWITCHING,NO INTERNAL NEGATIVE ANDLOGIC (+5V) SUPPLIES

100L

2


General Descrip on

The 100 Series GaN Controller is amul -func onal circuit capable of opera ng and protec ng all deple on-mode transistors. The non-inver ng analog input accepts nega ve control voltage to produce nega ve gate bias voltage. It has universal features thatallows 360° board placement withli le or no line crossovers in the motherboard. A single power supplyis enough for the 100 to provide dy-namic control, but it will also acceptnega ve power sources for current boost. Li le or no filtering is needed in heavy RF environments. The 100works seamlessly with 300 and 400Series MOS switches that have com-pact footprints for loca ng near the transistor drain choke. Demonstratorsand Kits containing combina ons of Bias Controllers and MOS Switchesare available for evalua on and fast prototyping.

100X, 100T SeriesGaN Controller Module, Op onal LeadsSMT, Non-Inver ng (Nega ve Analog Input)






Temperature compensa on is ac -vated from either local OR remotetemp sensor feedback.



Op onal pins, 0.05” [1.27 mm] pitch.


RoHS* Compliant

Features

ACTUAL SIZE



Ordering Informa on

100X02R6100T02R6100X02R0100T02R0100X01R4100T01R4

UNIVERSAL GaN CONTROLLER,NEGATIVE ANALOG INPUT, SIN-GLE DC (<80V) SUPPLY, VGSSHUTDOWN AT -2.6V, -2.0V, OR-1.4V. INDEPENDENT OR SE-QUENTIAL SWITCHING OF DRAINAND GATE

120X02R6120T02R6


124X02R6124T02R6

100 WITH NO GATE SWITCHING,NO INTERNAL NEGATIVE AND










+28 V

-6 V

-0.3 V

-6 V

0 V










Propagation Delay is measured from 90% of TTL to10% of Open Drain Output with pull-up resistor. Rise/Fall Times are measured at 10% and 90% of signal.Both measurements are summed for total time.


X = STANDARD CONFIGURATION

T = OPT PINS AT 0.05” [1.3mm] PITCH


ADDITIONAL MODELS:

120X02R0, 120T02R0, 120X01R4, 120T01R4,124X02R0, 124T02R0, 124X01R4, 124T01R4

100T 100X

3


General Descrip on

The 200 Series GaN Controller is amul -func onal circuit capable of opera ng and protec ng all deple on-mode transistors. The inver ng ana-log input accepts posi ve control volt-age to produce nega ve gate bias voltage. It has universal features thatallows 360° board placement withli le or no line crossovers in the motherboard. A single power supplyis enough for the 200 to provide dy-namic control, but it will also acceptnega ve power sources for current boost. Li le or no filtering is needed in heavy RF environments. The 200works seamlessly with 300 and 400Series MOS switches that have com-pact footprints for loca ng near the transistor drain choke. Demonstra-tors and Kits containing combina ons of Bias Controllers and MOS Switchesare available for evalua on and fast prototyping.

200L SeriesGaN Controller Module, Low ProfileSMT, Inver ng (Posi ve Analog Input)






Temperature compensa on is ac vat-ed from either local OR remote tempsensor feedback.



Pins have 0.06” [1.52 mm] pitch.


RoHS* Compliant

Features

ACTUAL SIZE


Typical Connec on Diagram Propagation Delay is measured from 90% of TTL to10% of Open Drain Output with pull-up resistor. Rise/Fall Times are measured at 10% and 90% of signal.Both measurements are summed for total time.

Ordering Informa on










+28 V

-6 V

-0.3 V

-6 V

0 V












200L02R6

200L02R0

200L01R4

UNIVERSAL GaN CONTROLLER,POSITIVE ANALOG INPUT, SINGLEDC (<80V) SUPPLY, VGS SHUT-DOWN AT -2.6V, -2.0V, OR -1.4V.INDEPENDENT OR SEQUENTIALSWITCHING OF DRAIN AND GATE

220L02R6

220L02R0

220L01R4


224L02R6

224L02R0

224L01R4


200L

4


General Descrip on

The FLEX-200T Series GaN Controlleris a mul -func onal circuit capable of handling and protec ng all deple on-mode transistors. The non-inver ng analog input accepts nega ve control voltage to produce nega ve gate bias voltage. The miniature SMT modulehas universal features that allows360° board placement with li le or no line crossovers to supplies or switch-es. A single power supply is enoughfor FLEX-200T to provide dynamiccontrol, but it will also take availablesources for higher current applica- ons. No extra filtering is required in heavy RF environments. The FLEX-200T works seamlessly with FLEX-300S and 400D Series MOS switchesthat have compact footprints for lo-ca ng near the GaN Drain choke. FLEX-PAC kits containing combina- ons of Bias Controllers and MOS Switches are available for fast proto-typing and development.

200X, 200T SeriesGaN Controller Module, Op onal LeadsSMT, Inver ng (Posi ve Analog Input)


Generates own Nega ve and Logic voltages from <80V supply OR acceptsthem for current boost.




Temperature compensa on is ac vat-ed from either local OR remote tempsensor feedback.



Op onal pins, 0.05” [1.27 mm] pitch.


RoHS* Compliant

Features

ACTUAL SIZE



Ordering Informa on

The 200 Series GaN Controller is amul -func onal circuit capable of opera ng and protec ng all deple on-mode transistors. The inver ng ana-log input accepts posi ve control volt-age to produce nega ve gate bias voltage. It has universal features thatallows 360° board placement withli le or no line crossovers in the motherboard. A single power supplyis enough for the 200 to provide dy-namic control, but it will also acceptnega ve power sources for current boost. Li le or no filtering is needed in heavy RF environments. The 200works seamlessly with 300 and 400Series MOS switches that have com-pact footprints for loca ng near the transistor drain choke. Demonstra-tors and Kits containing combina ons of Bias Controllers and MOS Switchesare available for evalua on and fast prototyping.

Propagation Delay is measured from 90% of TTL to 10%of Open Drain Output with pull-up resistor. Rise/FallTimes are measured at 10% and 90% of signal. Bothmeasurements are summed for total time.










+28 V

-6 V

-0.3 V

-6 V

0 V











200X02R6200T02R6200X02R0200T02R0200X01R4200T01R4

UNIVERSAL GaN CONTROLLER,POSITIVE ANALOG INPUT, SINGLEDC (<80V) SUPPLY, VGS SHUT-DOWN AT -2.6V, -2.0V, OR -1.4V.INDEPENDENT OR SEQUENTIALSWITCHING OF DRAIN AND GATE

220X02R6220T02R6


224X02R6224T02R6




ADDITIONAL MODELS:

220X02R0, 220T02R0, 220X01R4, 220T01R4,224X02R0, 224T02R0, 224X01R4, 224T01R4

200T 200X

5


General Descrip on

The 300PNC Series ComplementaryMOSFET Switches offers ease of inte-gra on to the GaN amplifier. They have clocked speeds of <<200nsec forRise and Fall Times. With board spaceat a premium, its compact footprintallows direct placement on or nearthe RF Choke to the supply line. Thecurrent capacity of the switches areup to 40A average with good heatsinking, and are safe with momentarypeak surges of current reaching >3Xthe average. The SMT switch is ideallydriven by the 100 or 200 Series Con-trollers with direct connec on to its GATE input port.

300PNC SeriesCMOS Power SwitchSMT, High Speed, High Voltage

Rated for 100V

Ultra-low Rds ON

Opera on up to 175°C, with derated voltage and current.

Great for High-Speed Pulsed systems.

Total switching mes of <500 nsec when used together with 100 or 200Series Controllers.

Complementary P & N-channel MOSachieve Rise & Fall Times of <<200ns.


RoHS* Compliant

Features

ACTUAL SIZES


Source Voltage +28 V +80 V

Gate Voltage 0 V +20 V

Drain Voltage +28 V +80 V

Rds ON (14 A Switch) 0.22 Ω

Rds ON (40 A Switch) 0.07 Ω

Turn-ON Propagation Delay 100 ns

Turn-ON Rise Time 70 ns

Turn-OFF Propagation Delay

Complementary Pair Only

150 ns

Turn-OFF Fall Time 100 ns

Period for Pulsed Signals 5 ms





Ordering Informa on

332P0000 14 AMP PULSED SWITCH

335CT000 14 AMP PULSED SWITCH,POWER CMOS, TTL DRIVE

362P0000 40 AMP PULSED SWITCH.

365CT000 40 AMP PULSED SWITCH,POWER CMOS, TTL DRIVE

392P0000 12 AMP PULSED mini SWITCH

395CT000 12 AMP PULSED mini SWITCHPOWER CMOS, TTL DRIVE

332N0000 COMPLEMENTS 332P ONLY

362N0000 COMPLEMENTS 362P ONLY

Propagation Delay is measured from 90% of DriveSignal from Controller to 10% of Drain Voltage Outputwith load of 1KΩ. Faster speeds occur with decreased load resistance. Rise/Fall Times are measured at 10%and 90% of signal. Both measurements are summedfor total time.


362P, 362N 332P, 332N 392P 395CT335CT365CT

365CT

335CT

395CT

6


General Descrip on

The 400 Series Dual MOSFET MiniSwitch offers ease of integra on to the GaN amplifier. With board space at a premium, its very ny footprint allows direct placement to the RFchokes and supply lines of two ormore devices. The current capacity ofeach switch is 10A average CW withgood heat sinking, and safe with mo-mentary peak surges of current reach-ing >3X the average. The SMT switchmodule is ideally driven by the 100 or200 Series Controllers. They come indual P-channel or complementary P &N-channel (Push-Pull).

400X, 400T SeriesDual MOSFET Switch Mini ModuleSMT, High Speed, High Voltage, Opt Terminals

Rated for 100V

Ultra-low Rds ON


CW and Pulsed versions available.

Ideal for 2-stage amps, balancedamps, and for single GaN with cri cal rise and fall me requirements.

Push-pull (totem pole) configura on assures faster shut-down to Vds=0.

Total switching mes of <500 nsec when used together with 100 or 200Series GaN Controllers.


RoHS* Compliant

Features

ACTUAL SIZE


Typical Connec on Diagrams

Ordering Informa on

410X0000410T0000

10 AMP AVG, DUAL P-CHANMOSFET SWITCH, CW

420X0000420T0000

10 AMP AVG, DUAL P-CHANMOSFET SWITCH, PULSED

430X0000430T0000

10 AMP AVG, COMPLEMEN-TARY P-N-MOS SWITCH PAIR,PULSED

INP INPUT FROM CONTROLLER DRIVER

GND GROUND

OUT OUTPUT TO MOSFET GATES

VG1,VD1,VS1 GATE, DRAIN, SOURCE OF MOS #1


VDS POSITIVE VOLTAGE SUPPLY




Rds ON, P-channel 0.18 Ω

Rds ON, N-channel 0.08 Ω





150 ns


Period for Pulsed Versions 5 ms



Drain Current, CW 10 A






Dual SwitchComplementary MOS

400X400T

7


General Descrip on

400L SeriesDual MOSFET Switch Mini ModuleSMT, High Speed, High Voltage, Low Profile

Features

ACTUAL SIZE


Typical Connec on Diagrams

Ordering Informa on

410L0000 10 AMP AVG, DUAL P-CHANMOSFET SWITCH, CW

420L0000 10 AMP AVG, DUAL P-CHANMOSFET SWITCH, PULSED

430L0000 10 AMP AVG, COMPLIMENTARYP-N-MOS SWITCH PAIR, PULSED

Complementary MOS Dual Switch


GND GROUND








Rds ON, P-channel 0.18 Ω

Rds ON, N-channel 0.08 Ω





150 ns


Period for Pulsed Versions 5 ms



Drain Current, CW 10 A




The 400 Series Dual MOSFET MiniSwitch offers ease of integra on to the GaN amplifier. With board space at a premium, its very ny footprint allows direct placement to the RFchokes and supply lines of two ormore devices. The current capacity ofeach switch is 10A average CW withgood heat sinking, and safe with mo-mentary peak surges of current reach-ing >3X the average. The SMT switchmodule is ideally driven by the 100 or200 Series Controllers. They come indual P-channel or complimentary P &N-channel (Push-Pull).

Rated for 100V

Ultra-low Rds ON


CW and Pulsed versions available.

Ideal for 2-stage amps, balancedamps, and for single GaN with cri cal rise and fall me requirements.

Push-pull (totem pole) configura on assures faster shut-down to Vds=0.

Total switching mes of <500 nsec when used together with 100 or 200Series GaN Controllers.


RoHS* Compliant

400L

8


General Descrip on

The 600 Series Evalua on Boards re-flect the possible combina ons of 100, 200, 300, & 400 Series Control-lers and Switches. They offer a wide range of smart func onality to the already superior a ributes of the GaN transistor. These eval boards are usedfor demonstra ng GaN opera on as well as drop-in modules for sub-systems and test apparatus.

600E SeriesController & Switch Evalua on BoardSMT, Compact, Field Configurable

Board pads come in castellated, iso-lated, or thru-hole for moun ng on PCBs, metal surfaces, and headers.

Switch: Rated for 100V, Ultra-lowRds ON, Opera on up to 175°C, with derated voltage and current.

Controller: Nega ve or Posi ve Gate Bias Input. Single supply possible.Independent or Sequen al Drain and Gate Switching.

Features Specifica on Snapshot

Eval Board Configura ons

Ordering Informa onMODEL CONTENTS TYPE

610EP2R6610EP2R0610EP1R4

100L CONTROLLER,14A CW SWITCH, SE-LECT VGS= -2.6V, -2.0V,OR -1.4V SHUTDOWN

1A

610EC2R6610EC2R0610EC1R4

1B

612EP2R6612EP2R0612EP1R4

200L CONTROLLER,14A CW SWITCH, SE-LECT VGS= -2.6V, -2.0V,OR -1.4V SHUTDOWN

1A

612EC2R6612EC2R0612EC1R4

1B

614EP_ _ _ 100L CONTROLLER,DUAL 14A CW SWITCH,SELECT 2R6, 2R0, 1R4

2A

614EC_ _ _ 2B

616EP_ _ _ 200L CONTROLLER,DUAL 14A CW SWITCH,SELECT 2R6, 2R0, 1R4

2A

616EC_ _ _ 2B

620EP_ _ _ 100L CONTROLLER,14A PULSED SWITCH,SELECT 2R6, 2R0, 1R4

1A

620EC_ _ _ 1B

622EP_ _ _ 200L CONTROLLER,14A PULSED SWITCH,SELECT 2R6, 2R0, 1R4

1A

622EC_ _ _ 1B


Supply (-) Voltage -6 V 0 V

Logic Voltage -0.3 V +4.0 V

Drain ON Propagation Delay — —

Drain ON Rise Time — —

Drain OFF Propagation Delay — —

Drain OFF Fall Time — —




TYPE-nA typically mounts on metal surfaces, while TYPE-nB on PCB or straight header pins.

PRODUCT FLYERAugust 2015

XSYSTOR INC.

18000 STUDEBAKER RD SUITE 700 MS 723

CERRITOS CA 90703

TEL: 888-968-7755 FAX: 888-968-7755


9


Eval Board Configura ons Ordering Informa on (cont)

MODEL CONTENTS TYPE

624EP_ _ _ 100L CONTROLLER,DUAL 14A PULSEDSWITCH, SELECT 2R6,2R0, 1R4

2A

624EC_ _ _ 2B

626EP_ _ _ 200L CONTROLLER,DUAL 14A PULSEDSWITCH, SELECT 2R6,2R0, 1R4

2A

626EC_ _ _ 2B

670EP_ _ _ 100L CONTROLLER,410L DUAL CWSWITCH, SELECT 2R6,2R0, 1R4

3A

670EC_ _ _ 3B

672EP_ _ _ 200L CONTROLLER,410L DUAL CWSWITCH , SELECT 2R6,2R0, 1R4

3A

672EC_ _ _ 3B

680EP_ _ _ 100L CONTROLLER,420L DUAL PULSEDSWITCH, SELECT 2R6,2R0, 1R4

3A

680EC_ _ _ 3B

682EP_ _ _ 200L CONTROLLER,420L DUAL PULSEDSWITCH , SELECT 2R6,2R0, 1R4

3A

682EC_ _ _ 3B

690EP_ _ _ 100L CONTROLLER,430L PULSED CMOSSWITCH, SELECT 2R6,2R0, 1R4

3A

690EC_ _ _ 3B

692EP_ _ _ 200L CONTROLLER,430L PULSED CMOSSWITCH, SELECT 2R6,2R0, 1R4

3A

692EC_ _ _ 3B

TYPE-nA typically mounts on metal surfaces, while TYPE-nB on PCB or straight header pins.

0 1 2 3 4 5 6 7 8 9

Model Number Color Code

I/O Pin Descrip ons

10


General Descrip on

The 700 Series Evalua on Board has a Controller and CMOS Power Switch onboard. They are used for demon-stra ng GaN in pulsed applica ons requiring both Rise and Fall Times atclocked speeds of <<200 nsec andTotal Propaga on Times of <<400 nsec. The modules are removable forreal-world applica ons when the eval-ua on phase is complete.

700E SeriesController & CMOS Switch Eval BoardHigh Speed, High Power, Removable Modules

Large moun ng pads and pitched holes are ideal for banana plug receptacles,headers, & wire jumpers. Arranged tointerface with any GaN orienta on.

Switch: Rated for 100V, Ultra-low RdsON, Opera on up to 175°C, with derat-ed voltage and current.

Controller: Nega ve or Posi ve Gate Bias Input. Independent or Sequen al Drain and Gate Switching.

Features Specifica on Snapshot

Eval Board Configura ons

Ordering Informa onMODEL MODULE CONTENT732E12R6732E12R0732E11R4

100X + 332P & 332N

SEE NOTE BELOW

735E12R6735E12R0735E11R4

100X + 335CT

SEE NOTE BELOW

762E12R6762E12R0762E11R4

100X + 362P & 362N

SEE NOTE BELOW

765E12R6765E12R0765E11R4

100X + 365CT

SEE NOTE BELOW

792E12R6792E12R0792E11R4

100X + 392P

SEE NOTE BELOW

795E12R6795E12R0795E11R4

100X + 395CT

SEE NOTE BELOW

732E22R6732E22R0732E21R4

200X + 332P & 332N

SEE NOTE BELOW

735E22R6735E22R0735E21R4

200X + 335CT

SEE NOTE BELOW

762E22R6762E22R0762E21R4

200X + 362P & 362N

SEE NOTE BELOW

765E22R6765E22R0765E21R4

200X + 365CT

SEE NOTE BELOW

792E22R6792E22R0792E21R4

200X + 392P

SEE NOTE BELOW

795E22R6795E22R0795E21R4

200X + 395CT

SEE NOTE BELOW


Optional Supply (-) Voltage -6 V 0 V

Logic Voltage -0.3 V +4.0 V

Drain ON Propagation Delay — —

Drain ON Rise Time — 200ns

Drain OFF Propagation Delay — —

Drain OFF Fall Time — 200ns




PRODUCT FLYERAugust 2015

MODULES ARE REMOVABLE WITH SOLDERMELTING POINT AT < 195°C. CONTROLLERCOMES WITH VGS SHUTDOWN THRESHOLDSOF –2.6V, -2.0V, OR -1.4V.

11


Eval Board Configura ons I/O Pin Descrip ons

Note that all pins and pads are arranged to inter-face with any transistor orienta on or layout.

0 1 2 3 4 5 6 7 8 9

Model Number Color Code

XSYSTOR INC.

18000 STUDEBAKER RD

SUITE 700 MS 723

CERRITOS CA 90703

TEL: 888-968-7755

FAX: 888-968-7755


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1. Background

Designers of RF circuits face diminishing returnswhen choosing GaN HEMTs for their next genera on power products. The superior a ributes of GaN over the established realm of LDMOS and Bipolar quickly dissi-pate when the biasing difficulty is factored in for deple- on mode devices. Pu ng smart circuitry to ensure that GaN HEMTs are safe and uncondi onally stable becomes a daun ng task to begin with, let alone dealing with the high cost of accommoda ng several IC components to share space fraught with EMI and RFI. The situa on de-mands a mul layered PCB solu on.

But the sensible solu on is to let the PCB remain as a 2-layer RF laminate and dropping-in ny controller and switch modules that take advantage of ght spaces and simple printed line interconnects. A significant reduc on of cost and complexity will be apparent in “black box”documenta on, parts procurement, assembly, and test.

XAN-2:Connec ng the Controller and Switch APPLICATION NOTE

August 2015

2. Controller I/O Table

**WARNING**—Do not connect Outputs together unless specified to do so.—Do not ground unused Outputs. Leave open.—Familiarize with the maximum rated voltages and currents.NTP has –4.3V output from a voltage inverter. It is intendedto be tapped if needed, by a >10KΩ poten ometer to estab-lish the -Vgs input to the POT pin of the 100 series.VN6 input is connected to the system nega ve supply of less than –6V. Although the 30mA output of the voltage in-verter may suffice in most instances, an external supply is helpful for gate current boost of large GaN in satura on.POT input receives nega ve voltage for 100 series or posi- ve voltage for 200 series. The value is either inverted or not to approximately the same level reaching the transistor gate.PGA output produces a square waveform triggered by TTLsignal to pin GTL. It provides gate bias to GaN HEMT at a lev-el set from POT pin and down to V_pinchoff established from the voltage inverter (-4.3V) or from pin VN6.FGA output has a fixed gate bias voltage typically used by models with NO gate switching capability.PTP has +4.3V output from a voltage regulator. It is alsointended to be tapped if needed, by a >10KΩ poten ometer to set opera ng voltage for POT pin of the 200 series.GTL input is an independent, ac ve-low TTL signal ( <4.7V )that controls gate switching of the device. It is ed together with DTL pin for sequen al pulse-width modula on at both gate and drain of the GaN. This is not used for sub-models.DTL input is the primary logic enabler that controls thedrain switching end of the transistor. When ed with GTL pin, the ac ve-low TTL ( <4.7V ) switches the drain voltageON first and would remain there un l the gate voltage signal undergoes a full ON/OFF cycle. Oscilla ons are mi gated when device is in pinch-off during Vdd ramping up & down.VP4 input is connected to the system logic supply of ≤ 5V. If none is available, the internal voltage regulator kicks in un-less the feature is not included in sub-models.OTL output is an ac ve-low TTL drive signal reserved forfuture switches with high/low-side drivers. Leave pin open.DFB input monitors the presence of drain voltage when theMOS switch is ON. It is only used if gate switching is desired;otherwise, leave pin open for sub-models.DRV output connects to the gate input of MOSFET switchmodule. The open drain port can handle up to 300mA, or beconnected to mul ple switching units.VDS input receives up to +80V from the same supply thatpowers the GaN HEMT. This source generates nega ve and logic voltages internal to the 100 and 200 models.

Before we start interconnec ng, lets become familiar with themodule inputs and outputs. Ref-erence each pin, label, and de-scrip on to the schema c and outline drawing. Refer to theProduct Flyers for more details.

3. Controller I/O Pin Descrip ons

100L, 200L

100X, 100T, 200X, 200T

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August 2015

4. Func onal Diagrams

INP input connects directly to the Controller DRV output.OUT is a low-side driver output which connects toMOSFET gates VG1 and VG2.VG1, VG2, GA are gate inputs that receive signals fromDRV or OTL outputs of the Controller. For a general pur-pose switch like the 410, the DRV pin can be ed to VG1 & VG2, while bypassing INP & OUT pins.GI, GC, GV are interdependent gate inputs that connectmatching pins of complementary switch pairs. Only whenusing a single switch that GI and GC are ed together.VD1, VD2, DR are drain outputs that connect to the GaNdevice drain. Switching speeds may be compromisedwhen bypass capacitance exceeds 500pF.VS1, VS2, SO are source inputs that take up to +80V sup-ply. Larger storage capacitance are a ached here.

3. Switch I/O Pin Descrip ons

The following circuit diagrams are just a sampling ofthe numerous configura ons the Controller and Switch can work for your applica on. The base model Controller like the 100 & 200 are the most universal, meaning theyhave the most features that can be u lized or ignored. Sub-categories of these are lesser models that have certainfeatures removed for a simpler, more specific applica on.

The primary func on of the Controller is a bias se-quencer. Gate voltage is delivered to device before drainvoltage and remains there un l the drain side has no more poten al. The Switch stands ready for shutdown when GaN safety is compromised. The secondary func on is to control the Switch with PWM/TTL signals and deliver high-voltage/high-current/high-speed square pulses to power-up or modulate the RF device. Drain switching can also bele in the ON-state indefinitely by grounding the pulse enable pin. The ter ary func on is the ability to control gate voltage switching independently or slave to drainswitching. In addi on to added stability men oned previ-ously, pulse-shaping can be introduced with gate control.


GND GROUND





I/O TABLE: 400 SERIES I/O TABLE: 300P-N-C SERIES

DR DRAIN

GND GROUND

G A GATE IN

SO SOURCE

G I GATE IN

G V GATE 15V

G C GATE CAP

The circuit in Figure 1 uses a non-inver ng controller, 100X and paired with a pulsed switch 332P. A single powersource is used; therefore, gate current from internal in-verter is limited to 30mA available to GaN. In cases wherenega ve supply is accessible, the poten ometer should give relief to the nega ve tap, NTP. We use general pur-pose switching diodes to protect the TTL inputs from volt-age transients, signal level changes, and nega ve sources.

FIGURE 1

FIGURE 2

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August 2015

The circuit in Figure 2 has a 200X inver ng controller driving a general purpose PMOS transistor. The switchopera ng in CW is typically used for pulse periods beyond 5msec. The value and ra ng of the pair of resistors R1 & R2 depend on how much current to draw for increasedswitching speed. The DRV output of the controller shouldnot exceed 100mA of sink current. A poten ometer taps into the posi ve auxiliary port to generate an opera ng gate voltage. This combina on also relies on a single pow-er source.

A Complementary MOS (push-pull) switch is illustratedin Figure 3 with a power CMOS 335CT controlled by abasic sequencer 124X. The advantage of a P & N-Chan pairis mainly to “pull-down” the drain voltage from say 50Vdown to 0V as quickly as possible with no significant decay normally seen with single MOSFET switches. Structuredrise and fall mes make for a well controlled spectral char-acteris c. The nega ve supply also provides boost current to the gate of a GaN transistor in satura on.

FIGURE 4

FIGURE 3

A 220X controller with no gate switching feature drives a410X dual switch in CW, as shown in Figure 4. The objec ve is that one switch controls the high-power, final amp stage, while the other switch handle two driver amp stages. Whileit’s possible to e the gates of three transistors from one controller, their gate impedances may adversely affect their individual bias points and cause current imbalances. It’sbe er prac ce to buffer each device gate with voltage fol-lower or adjustable gain op-amps.

Even though the controller’s fixed or pulsed gate output is able to handle a few device loads, remember that the in-verter of the 200X is limited to 30mA unless an external neg-a ve source is connected to provide a boost of up to 100mA. Also, having op-amp buffers will further extend the current limit for up to 100mA per buffer, which is a welcome source for applica ons with saturated GaN transistors.

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August 2015

Prior to any power start-up, the following must be tak-en into account and double-checked.

Perform con nuity tests of all connec ons leading to the gate and drain sides of the transistor.

Disconnect all DC supplies and signal inputs. Thenmeasure proper output levels. Prevent recall com-mands from instruments which could be inadvertentlysummoned with destruc ve results, like excessive drain & gate voltages as well as non-TTL signals.

Refer to the I/O pin descrip ons on the first page. As a default, leave unused pins open.

Prac ce safe handling and prevent ESD damage.

The controller will protect the GaN device from anysequence of power-up and power-down ac vity, provided the connec on to device gate is solid. The nega ve supply is turned ON first. In cases where nega ve voltage is gen-erated by the controller, the main power supply can beturned ON, but ONLY if power is disconnected firsthand from reaching the GaN drain physically. When the propergate level is established with the poten ometer and measured at the device port, only then should drain volt-age be turned ON or reconnected. As a ma er of habit during opera on, nega ve voltage should be first in and last out, and the controller may only provide back-up pro-tec on.

An alterna ve test method for ini al opera on of con-troller & switch is to temporarily take out the GaN deviceand replace with resis ve and capaci ve loads. As a star ng point, refer to the spec sheets which assumes a gate load of 2.7KΩ + 500pF and drain load of 1.0KΩ + 500pF. Once the proper signals are established, the GaNdevice may be reinstalled.

5. Start-up and Opera on

6. Timing Diagrams

The ming sequence in Figure 5 illustrates a master-slave rela onship of drain-gate switching with the 100 or200 Series Controller connected to the 300 or 400 SeriesSwitch. To do this, the gate switch enable pin (GTL) is ed or synchronized with drain switch enable pin (DTL), andthen started up with an ac ve-low TTL signal. The control-ler produces an op onal TTL output (OTL) and an open-drain current drive (DRV). Then the MOSFET switch turnsON and supplies power to the transistor (from VD1, VD2,or DR).

FIGURE 6

FIGURE 5

Only with the presence of drain voltage would thegate switching feature ac vate (PGA), and finally turns on the GaN device for RF to transmit. The sequence is fin-ished with the rising end of the TTL signal. The pulsed gate(PGA) goes back to pinch-off voltage and drain voltage (VD1, VD2, DR) shuts down therea er. Note that the total ON propaga on me from TTL to RF is the sum of me delays, rise mes, and fall mes shown in the diagram. Total propaga on mes of <500nsec are common.

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August 2015

Figure 6 has a ming sequence that’s typical of sub-models like the 124/224 with no gate switching capability.Gate bias is le as a fixed value, so drain voltage ac vity turns the GaN device ON and OFF . This par cular diagram shows a CW RF to be pulse modulated. In a different sce-nario when gate switching is available, we can fix the drain voltage to a steady state and pulse the gate bias instead toget a similar result. Either way, the gate (GTL) and drain(DTL) enable pins are really independent and will cater tovarious customer preference.

7. Temperature Compensa on

8. Moun ng Considera ons

The 100X/200X controllers and the 400X switch havevery small footprints considering they are mounted up-right on the receiving board. The I/O ports are castellatedholes with a 50 mil pitch. The “L” models have a lowerprofile of 0.20” height with castella on at 60 mil pitch. The “T” models have 0.10” long terminal pins at 50 milpitch that would make them stand on their own. Thoughreflow soldering is acceptable to mount them, care should be taken that a large temperature gradient at the top ofthe units may dislodge components or worst burn them.At this me, manual installa on is recommended with lead-free solder at <230°C, otherwise the reflow process is appropriate at <195°C.

This subject is best described in its own applica on note, but some general func onali es will be noted here. The 100 & 200 Controllers have two provisions to addtemperature compensa on. The first is adding a specific thermistor to the unit. This is a custom feature not includ-ed in the standard fare. Though handy, the sensing com-ponent is far removed from the base plate or heat source,and may require over-compensa on to work.

The second way is installing a familiar temperaturesensor IC or discrete circuit near the device and feed itsresultant voltage to the controller input, POT. This samepin is also connected to the poten ometer that estab-lished the opera ng gate bias. Now the two signals are combined by an op-amp adder circuit to produce a com-posite nega ve voltage for the GaN device. Series resis-tors for each voltage inputs are first calculated to regulate the impact of the variable voltage from the sensor.

The tricky part is choosing what temp sensor to usewhen the 100 Series takes only nega ve signals, while the 200 Series takes only posi ve.

Ideal placement for controllers is on the gate side of tran-sistor while MOSFET switches on the drain side, as shown onFigures 7 and 8. The units should be as close to the device tominimize parasi c inductance from supply lines. The drain side is especially suscep ble to large voltage spikes if there’s significant distance between the RF choke and the switch.

In cases where system requirements have tougher heightrestric ons from components, the 100X & 200X controllers are be er suited to address this. The units can be installed in three ways, which are upright, slanted, and flat & buried. A resultant height of 0.10” [2.54mm] can be realized from theboard surface. This is illustrated in the applica on note XAN-4: Moun ng schemes for the Controller.

FIGURE 7

FIGURE 8

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August 2015

10. MOS Switch Selec on Guide9. Controller Selec on Guide

MODEL DESCRIPTION

100X, 100T,100L

100X, 100T, & 100L ARE IDENTICAL FUNCTIONALLY BUTDIFFER STRUCTURALLY. SUFFIX ’T’ STANDS FOR TERMINALPINS AT 50 MIL PITCH, WHILE ’L’ FOR LOW PROFILE AT 60MIL PITCHED CONNECTIONS. ‘X’ IS STANDARD CONFIGU-RATION. THE 100X & 100L MOUNT ON PCB FROM CASTEL-LATED I/O PORTS. THESE UNITS CONTROL THE GaN TRAN-SISTOR BY SWITCHING THEIR DRAIN AND GATE SUPPLIESSEQUENTIALLY OR INDEPENDENTLY. A SINGLE SUPPLY OFUP TO +80V IS SUFFICIENT TO OPERATE. THE 100 SERIESHAVE NON-INVERTING INPUTS, WHICH MEANS IT TAKESNEGATIVE VOLTAGE TO PRODUCE NEGATIVE GATE BIASTO THE TRANSISTOR.

120X, 120T,120L

SAME AS THE 100 SERIES BUT WITHOUT GATE SWITCHINGCAPABILITY. A FIXED GATE BIAS VOLTAGE IS UTILIZED IN-STEAD.

122X, 122T,122L

SAME AS THE 100 BUT WITHOUT GATE SWITCHING ANDVOLTAGE INVERSION. A NEGATIVE SOURCE IS SUPPLIED BYTHE USER.

124X, 124T,124L

THIS MODEL IS A BASIC GaN SEQUENCER/MODULATOR.THERE ARE NO GATE SWITCHING, VOLTAGE INVERTER,AND LOGIC SUPPLY. THE USER BASICALLY PROVIDES THENECESSARY DC SOURCES THAT’S ALREADY IN THEIR SYS-TEM.

200X, 200T,200L

200X, 200T, & 200L ARE THE SAME AS THEIR COUNTER-PARTS ABOVE EXCEPT THAT THEY HAVE INVERTING IN-PUTS. IT TAKES POSITIVE VOLTAGE TO PRODUCE NEGATIVEGATE BIAS TO THE TRANSISTOR.

220X, 220T,220L

SAME AS THE 200 ABOVE BUT WITHOUT GATE SWITCHINGCAPABILITY. A FIXED GATE BIAS VOLTAGE IS UTILIZED IN-STEAD.

222X, 222T,222L

SAME AS THE 200 BUT WITHOUT GATE SWITCHING ANDVOLTAGE INVERSION. A NEGATIVE SOURCE IS SUPPLIED BYTHE USER.

224X, 224T,224L

THIS BASIC SEQUENCER/MODULATOR HAVE NO GATESWITCHING, VOLTAGE INVERTER, AND LOGIC SUPPLY. THEUSER BASICALLY PROVIDE ALL DC SOURCES ALREADY PRE-SENT IN THEIR SYSTEM.

MODEL DESCRIPTION

332P SINGLE 14A SWITCH MODULE FOR PULSED APPLICATIONS.

332N ADD-ON MODULE TO 332P FOR A COMPLEMENTARY MOSCONFIGURATION.

335CT 14A POWER CMOS MODULE WITH TTL INPUT DRIVE. AP-PLICATION IS SPECIFIC TO PULSED OPERATION WITH VERYFAST RISE AND FALL TIME REQUIREMENTS.

362P SINGLE 40A SWITCH MODULE FOR PULSED APPLICATIONS.

362N ADD-ON MODULE TO 362P FOR A COMPLEMENTARY MOSCONFIGURATION.

365CT 40A POWER CMOS MODULE WITH TTL INPUT DRIVE. AP-PLICATION IS SPECIFIC TO PULSED OPERATION WITH VERYFAST RISE AND FALL TIME REQUIREMENTS.

392P SINGLE 12A SWITCH, MINI-MODULE FOR PULSED APPLICA-TIONS.

395CT 12A MINI CMOS MODULE WITH TTL INPUT DRIVE. APPLI-CATION IS SPECIFIC TO PULSED OPERATION WITH VERYFAST RISE AND FALL TIME REQUIREMENTS.

410X, 410T,410L

THESE HAVE DUAL 10A MOSFET SWITCHES FOR CW ORGENERAL PURPOSE OPERATION. 410X, 410T, 410L AREIDENTICAL FUNCTIONALLY BUT DIFFER STRUCTURALLY.SUFFIX ’T’ STANDS FOR TERMINAL PINS AT 50 MIL PITCH,WHILE ’L’ FOR LOW PROFILE AT 60 MIL PITCHED CONNEC-TIONS. ‘X’ IS STANDARD CONFIGURATION. THE 410X &

420X, 420T,420L

THESE HAVE DUAL 10A MOSFET SWITCHES FOR PULSEDAPPLICATIONS. LIKE THE 410 AND 430, THEY ARE EVENSMALLER THAN THE 100/200 CONTROLLER MODULES ANDIS SUITABLE FOR VERY TIGHT SPACES WITH LESSER CUR-RENT DEMANDS.

THE 10A P-CHAN & N-CHAN MOS SWITCHES ARE COMPLE-MENTARY AND WORKS LIKE A PUSH-PULL. APPLICATION ISSPECIFIC TO PULSED OPERATION WITH VERY FAST RISEAND FALL TIME REQUIREMENTS.

430X, 430T,430L

X X X X X XX X

100, 120,

122, 124,

200, 220,

222, 224

X 0

T 0

L 0

2R6

2R0

1R4

MODEL TYPE PARAMETERX X X X X

332, 335,362, 365,392, 395,410, 420,

430

P 0N 0CTX 0T 0

X X X

000

MODEL TYPE PARAMETER

18



August 2015

11. Outline & Land Pa ern

19



August 2015

20



August 2015

21



August 2015

22


Background

The 100/200 Series GaN Controller is a versa le device. Not only can it handle a mul tude of system variants described in the spec sheets and app notes, but the in-line, castellatedports allow mul direc onal moun ng, narrow landing pa erns, and adaptable height profiles. The posi oning and soldering of these modules are done either manually, orwith the aid of available erector kits for reflow. Note that the circuit board uses lead-free, high-temp solder. However,care should be taken when exposing them to similar tem-peratures during reflow and assembly.

APPLICATION NOTEAugust 2015

XAN-4:Mounting Schemes for the Controller

UPRIGHT

SLANTED

FLAT & BURIED

Moun ng Schemes

UPRIGHTThis is the standard method for installing the Controllermodule. All components from both sides of the board arevisible for easy iden fica on and troubleshoo ng. The maximum height is 0.24” [6.1mm] from the moun ng pads. Erector sets (not shown) may be used to aid installa on. They clamp on the module and their four legs are press-fit through a clearance hole on the receiving board, whichlocks the unit in place during solder reflow.

SLANTEDTo lower the height profile in a simple step, this is a pre-ferred method. The maximum height is 0.16” [4.1mm] fromthe moun ng pads. Erector sets (not shown) may also be used to aid installa on. They clamp on the module and maintain a stable angle during solder reflow. The compo-nents on the other side of the board will no longer be visi-ble. With the increased footprint, care should be takenwhen running ac ve lines underneath the module.

FLAT & BURIEDThis method is more involved but a maximum height of0.10” [2.5mm] from the moun ng pads can be realized. The receiving board will have to be routed out to give theburied components a clearance of 0.05” [1.3mm] approxi-mately. This may extend into the heatsink if applicable. Analternate solu on is to install the module at the edge of the receiving board. The sixteen (16) solder points are verystrong and will be more than enough to suspend the mod-ule horizontally. Further, the use of po ng epoxy for sup-port and heat dissipa on may be supplemental.

23


Land Pa erns Module Erector Kit

The Erector cutouts shown above are used to facilitate thesolder-reflow process for module installa on. Use sharp wire cu ers to separate and shape the pieces. They may be discarded a er use. For UPRIGHT assembly, the TABLE and LEGS are snapped together and clamped onto theempty grooves of the module. The LEGS are either cut tosize or press-fit through holes on the receiving board. For SLANTED assembly, TILTS are clamped onto the moduleinstead. Either LEGS or TILTS may be used as spacers forthe FLAT & BURIED assembly.

24


Background

GaN transistors operate in a host of drain voltages from 28Vto 65V. While any type of pulsed switch currently offered can accommodate them easily, it is not so easy with a CWswitch to cover all voltage possibili es. The CW switch is very simple, and consists of a P-channel MOSFET with tworesistors, which was detailed in previous applica on notes and diagrams. This app note allows the user to convert alltypes of single MOS pulsed switches into a CW version, inthe event that pulse requirements are longer than 500usecwidth or 5msec period.

APPLICATION NOTEOctober 2015

XAN-6:Converting Switch from Pulsed to CW

CW Switch Schema c

The diagram above shows a controller with an open-drainoutput driving a CW switch. It can be seen that the gate volt-age to the MOS device is always 15V below the source levelto turn-ON the switch. Therefore,

Where, drive current Idrv ≈ 5mA << VS / (R1 + R2) << 100mA typically. Increasing current improves speed, but at the costof added heat to the controller and resistors.

Modifica ons to the Switch

Rework Instruc ons:1. Switches 332P, 362P, and 392P only apply.2. Place module on a hot plate set at 120°C. Use solder

gun or hot-air gun to remove or insert parts. Lead-free solder melts at approximately 220°C.

3. Remove four components A2, A4, A8, and A9. Theyare indicated by red, yellow, and blue colors.

4. Insert placeholder A2 (shown in red) with R1 resistoras calculated from the schema c.

5. Insert placeholder A4 (shown in yellow) with R2 resis-tor as calculated. Make sure to use higher wa age resistors for appropriate current drawn.

6. Use lead-free solder as necessary.7. Below are ini al values to consider:

VS = 28V, Idrv = 5.2mA, R1 = 3.0K, R2 = 2.4K

VS = 36V, Idrv = 5.2mA, R1 = 3.0K, R2 = 3.9K

VS = 48V, Idrv = 5.4mA, R1 = 3.0K, R2 = 6.2KNote: Scale down resistor values to increase current andswitching speeds.

25

GaN Solutions at your fingertips

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