February 19 - 21, 2003 , - — - — , CMP-MIC Catalog No. UNIVERSITY r£?j!3LIOTHtiv . 03 IMIC - 800P Marina Beach Marriott Hotel Marina Del Rey, CA HANOVER TECHfJi-SGHE WFORf^ATIONSBiBUOTHEK 2003 PROCEEDINGS EIGHTH INTERNATIONAL CHEMICAL-MECHANICAL PLANARIZATION FOR ULSI MULTILEVEL INTERCONNECTION CONFERENCE (CMP-MIC) A SPECIALTY CONFERENCE OF X HOC J ICROBLECTftONICS NSTITUTE ^kilNTER- ONNEGTION URmB Hannover 89 Library of Congress No. 89-644090
CMP CORPORATE EXECUTIVES:"PROGRESS TOWARDS 65 nm NODE,
LOW-k AND COLLABORATIONS "•
Matthew NevillePresident & CEO
CABOT MICROELECTRONICS•
Loyal Peterman, Jr.President & CEO
ABRASIVE TECHNOLOGY•
Richard Faubert(former Pres. & CEO SpeedFam-IPEC)
Executive VPNOVELLUS SYSTEMS
•
Dan KoharkoExecutive VP
RODEL, INC.•
Mark MerrillChief Marketing Exec.
KLA-TENCOR
Coffee Break 10:15 -10:30 AM
SESSION H -10:30 A.M. -12:30 P.M.VLSI MULTILEVEL INTERCONNECTION
C.M.P. CONSUMABLES - Part IChairman: Dr. Ara Philipossian
UNIV. of ARIZONATuson, Arizona
2.A "Effect of Coefficient of Friction and ProcessTribology on Removal Rate in ILD CMPApplications" by A. Philipossian and S. Olsen; UNIV.of ARIZONA; Tuson, AZ. ^Invited Paper
2.B "A New Method for Evaluating CMP Pad SurfaceConditions Using Digital Images" by H. Kojima, T.Nishiguchi; HITACHI, LTD; Yokohama, JAPAN. 37
2.C "Determining the Thermal Attributes of CMPThrough Controlled Removal Rate VersusTemperature Studies" by J. Sorooshian, D.DeNardis, L. Charns, Z. Li, F. Shadman and A.Philipossian; UNIV. of ARIZONA; Tuson, AZ; andD. Boning; MASSACHUSETTS INST. of TECH.;Cambridge, MA. 43
2.D "SMART Particles for Copper CMP" by S.Hellring, B. Auger, C. McCann, and M. Fontenot;PPG INDUSTRIES; Monroeville, PA; and H.C.Kang, L. Guo, X. Shi, D. Shipp and Y. Li;CLARKSON UNIV.; Potsdam, N.Y. 51Invited Paper
2.E "Tribology and Removal Rate Characteristics ofAbrasive-Free Slurries for Copper CMPApplications" by D. DeNardis, J. Sorooshian and A.Philipossian; UNIV. of ARIZONA; Tuson, AZ; andM. Habiro; HITACHI CHEMICAL; Ibaraki, JAPAN;and C. Rogers; TUFTS UNIV. ; Medford, MA. 56
2.F "Metal-Doped Silica Abrasive Slurries and TheirEffect on Friction and Removal Rate Character-istics of ILD and STI CMP" by R. Brandes, T.Knothe, F. Klaessig; DEGUSSA CORP.; Piscataway,N.J.; and F. Menzel, W. Lortz and G. Varga;DEGUSSA AG; Hanau, GERMANY; and T.Shibasaki, A. Philipossian; UNIV. of ARIZONA;Tuson, AZ. o 4
— POSTER PAPERS —
2.G "Nanocrystalline Alumina and Ceria Abrasive inChemical-Mechanical Planarization Slurries" by P.G. Murray, H. Sarkas, D.C. Coy and R.W.Brotzman; NANOPHASE TECH.; Romeoville, IL. 73
2.H "Experimental Investigation of Surface Propertiesof Particles and Their Effects on Copper CMP" byJ.J. Zhao, Y. Li; CLARKSON UNIV.; Potsdam,N.Y.; and P. Severs, H. Xu, H. Liang; UNIV. ofALASKA; Fairbanks, AK. 7 7
2.1 "Pad Conditioning and Scale-up Issues Between 200and 300 mm Polishing" by A. S. La wing, C. Jurasand T. Tran; RODEL; Phoeniz, AZ. 8 2
2.J "Effect of Pad Characteristics on Metal ChemicalMechanical Planarization" by N.H. Kim, I. P. Kim,and E. G. Chang; CHUNG-ANG UNIV.; Seoul,KOREA; and S. Y. Kim; ANAM SEMI.; Kyunggi,KOREA. 86
2.K "Study of Copper - CMP Process Performance forInterconnects Using New Copper Slurries" by S.Balakumar; T. Selvaraj, L.B. Fu, C.Y. Li and R.Kumar; INSTITUTE of MICRO.; Singapore; and J.Chee; CABOT MICRO.; Singapore. 9°
5
2.L "Analysis of the Sub Pad Effects on the Edge inCMP" by J.S. Kim, G. Kim, J.Y. Lee, I.H. Park;SKC CHEM.; Chungbuk, KOREA; and Y.K. Hong,J. G. Park; HANYANG UNIV.; Ansan, KOREA. 94
SESSION III -1:30 - 3:30 P.M.VLSI MULTILEVEL INTERCONNECTIONCMP COPPER / LOW - k PROCESSES
Chairman: Dr. Peter BurkeLSI LOGICSanta Clara, CA.
3.A "Challenges of CMP Technology Beyond 65 nmNode" by N. Endo, S. Kondo, S. Tokitou, B.U. Yoon,N. Ohashi, S. Sone and H.J. Shin; SELETE; Ibaraki,JAPAN. 101Invited Paper
3.B "Copper Chemical Mechanical PlanarizationProcesses With Carbon Dioxide" by P.M. Visintin,G. M. Denison, C.K. Schauer and J. M. DeSimone;UNIV. of NORTH CAROLINA; Chapel Hill, N.C.;and C. Bessel; VILLANOVA UNIV.; Villanova, PA. 108
3.C "Copper/Low-k CMP for 0.13 micron 300 mmDual Damascene Process" by C.W. Chung, Y.H.Chen, W. Chang, S.M. Jang, and M. S. Liang;T.S.M.C; Taiwan, R.O.C. 115
3.D "Delamination Studies in Copper / Ultra Low-kStack" by A. K. Sikder, P. Zantye, S. Thagella, A.Kumar; UNIV. of S. FLORIDA; Tampa, FL.; and B.M. Vinograndov, N. V. Gitis; CTR. for TRIBO-LOGY' Dell Aveue, CA. 120
3.E "Low Stress Polishing of Copper / Low-k DielectricStructures " by R. K. Singh; UNIVERSITY ofFLORIDA; Gainesville, FL. 1 2 8
Invited Paper
— POSTER PAPERS ™
3.F "Progress Towards Copper Chemical MechanicalPlanarization in a Carbon Dioxide Matrix" by G. M.Denison, P.M. Visintin and J.M. DeSimone; UNIV. ofN. CAROLINA; Chapel Hill, N.C.; and C. Bessel;VILLANOVA UNIV. ; Villanova, PA. 1 3 7
SESSION IV - 3:45 - 5:05 P.M.VLSI MULTILEVEL INTERCONNECTION
C.M.P. MODELING & SIMULATION
Chairman: Dr. Rod KistlerLAM RESEARCH CORP.Fremont, California
4.A "Simulation Method for CMP Slurry Flow With aGrooved Polishing Pad" by J.K. Eaton, C.J. Elkinsand T.M. Burton; STANFORD UNIV.; Stanford,CA.; A. Miyaji; NIKON CORP.; Tokyo, JAPAN; D.P. Coon; NIKON RES. CORP.; San Carlos, CA. 143
4.B "Three-Dimensional CMP Process Model forComposite Film Wth Periodic Patterns by B.E.M."by T. Yoshida; Y.N.T. - Japan, Yamaguchi, JAPAN. 151
4.C "Integrated Modeling of Nanotopography Impact inPatterned STI CMP" by X. Xie and D. Boning;MASSACHUSETTS INSTITUTE of TECH;Cambridge, MA. 159Invited Paper
4.D "Total Software Solutions for CMP YieldEnhancement" by S.Y. Oh, K.H. Kim, Y.J. Kwon,O.S. Nakagawa; UBITECH; San Jose, CA.; J.T.Kong, M.H. Yoo, Y.K. Park, Y.H. Kim, K.H. Lee,T.K. Kim; SAMSUNG ELECTRONICS; Gyeonggi,KOREA, S.K.Hahn; SKW ASSOC.; Santa Clara, CA. 169
— POSTER PAPERS «-
4.E "The Effect of Wafer and Pad Shape on RemovalUniformity • A Qualitative Analysis Using aMechanistic Model" by J. McGrath and C.E. Davis;UNIV. of LIMERICK; Limerick, IRELAND. 179
4.F "An Analytical Dishing and Step Height ReductionModel for Chemical Mechanical Planarization" byG. Fu, A. Chandra; IOWA STATE UNIVERSITY;Ames, IA. 1 8 3
4.G "Effect of Kinematic Conditions on PolishingProcess in Rotary CMP" by H. Kim, H. Kim, H.Jeong; PUSAN NAT'L UNIV.; Pusan, KOREA; andE. Lee, Y. Shin; KOREAN INST. of MAT'L &MACHINES; Daejeon, KOREA. l 8 ?
Thursday , February 20, 2003
SESSION V - 8:30 -10 A.M.VLSI MULTILEVEL INTERCONNECTION
CMP INTEGRATION ISSUES
Session Organizer Dr. Nobuhiro Endo& Chairman SELETE
Ibarake-ken, JAPAN
5.A "Corrosion Control Technique in Copper Post -CMP Cleaning Using Gas Dissolved Water" by M.Kamezawa and K. Ito; EBARA CORP; Fujisawa,JAPAN. 193
5.B "Profile Control by the Smart Simulator In PartialPolishing CMP" by T. Senga, K. Shinjo, T. Ueda, H.Nakahira, Y. Ushio; NIKON CORP.; Tokyo, JAPAN;and A. Une; NAT'L DEFENSE ACAD.; Kanagawa,JAPAN. 200
5.C "Influence of Micro-Voids in Copper Films onRepeatability of Removal Rate" by K. Suzuki, S.Tokitoh, H.J.Shin and I. Matsumoto; SELETE;Ibaraki-ken, JAPAN. 206
5.D "Less Than 0.1 psi Ultra Low Pressure CMP forCopper / Ultra Low-k Films" by S. Hoshino, Y.Kitade, N. Yoshida and Y. Uda; NIKON CORP.;Tokyo, JAPAN. 212
SESSION VI -10:15 -12:15 P.M.VLSI MULTILEVEL INTERCONNECTION
CMP RELIABILITY ISSUES
Chairman: Dr. Srini RaghavanUNIV. of ARIZONATuson, Arizona
6.A "Analysis of Wafer Defects Caused by LargeParticles in CMP Slurry Using Light Scattering andSEM Measurement Techniques" by K. Nicholes;BOC EDWARDS; Chanhassen, MN.; M. Litchy, D.Grant; CT ASSOC.; Bloomington, MN.; E. Hood, B.Easter and L. Cheema; AGERE SYS.; Orlando, FL.;and V. Bhethanabotla; UNIV. of S. FLORIDA;
' Tampa, FL. 221
6.B "Defect Learning In Dielectric CMP" by C. Hawes,J. Kasthurirangan, P. Feeney; CABOT MICRO;Aurora, IL.; and R. Campbell; KLA-TENCORCORP.; Portsmouth, NH. 227Invited Paper
6.C "Rapid Reliability Assessment of ULSI Electronicswith Copper Interconnects" by P. McCluskey;UNIV. of MARYLAND; College Park, MD. 236Invited Paper
6.D "Post Chemical-Mechanical Planarization DefectStudy on 90 nm Copper / Low-k Interconnects" byH.H. Lu, H.H. Kuo, S.N. Lee, Y.H. Chen, S.M.Jang and M.S. Liang; T.S.M.C.; Taiwan, R.O.C. 240
6 E "Corrosion Issues in Chemical-Mechanical Planari-zation" by S. Raghavan, S. Tamilmani, W. Huang;UNIV. of ARIZONA; Tuson, AZ.; and R. Small;DUPONT - EKC TECH.; Hayward, CA. 246Invited Paper
6.F "A 90 nm Copper CMP Process With LowDefectivity Using Optimized Copper and BarrierRemoval Slurries" by P. Gopalan, T. Buley and M.Kulus; RODEL; Phoenix, AZ. 257
™ POSTER PAPERS -
6.G "Excursion Control and Baseline DefectivityReduction in Copper CMP" by R. Guldi, M. Eissa,V. Korthuis, F. Cataldi, D. Ramappa, J. Ritchison andJ. Shaw; TEXAS INSTRUMENTS; Dallas, TX.; andV. Sachan, S. Fanelli, M. Vunguyen and B.Fiordalice; KLA-TENCOR; Milpitas, CA. 271
6.H "DHF Application at Metal CMP Cleaning Process"by S.Y. Kim, D.Y. Kim, H.P. Kim, C.S. Moon andJ. Lee; ANAM SEMI.; Kyunggi-do, KOREA. 275
SESSION VII -1:15 P.M. - 2:15 P.M.VLSI MULTILEVEL INTERCONNECTION
DEDICATED TIME FOR CMPPOSTER PAPERS, EXHIBIT VIEWING
SESSION Vm - 2:15 P.M. - 5:00 P.M.VLSI MULTILEVEL INTERCONNECTION
C.M.P. NOVEL PROCESSES, CONDUCTORPROCESS & PROCESS CHARACTERIZATION
Chairman: Dr. Mansour MoinpourINTEL CORP.Santa Clara, Californai
- CMP NOVEL PROCESSES -
8.A "Research on a Novel Planarization Method as anAlternative or Complement to CMP" by J.W.McCutcheon; BREWER SCIENCE; Rolla, MO. 283
8.B "A Novel Photoresist Planarization for DeepTrench Capacitor Plate Formation of DRAM" byC.F. Wang, H.Y. Chang, T.K.J. Liu, L.K. Chou andH.H. Wang; WINBOND ELECTRONICS; Taiwan,R.O.C. 291
- CMP CONDUCTOR PROCESSES -
8.C "Improved Copper Abrasive-Free Polishing for 90nm Node Process" by Y. Yamada, H. Terazaki and N.Konishi; HITACHI; Tokyo, JAPAN. 301
8.D "Chemical Mechanical Planarization for CopperInterconnection Layers" by T. Hara; HOSEI UNIV.;Tokyo, JAPAN. 308Invited Paper
7
- CMP PROCESS CHARACTERIZATION -
8.E "Statistical Experimental Methods Used to ObtainEdge Control of 300 mm Oxide Wafer DuringChemical Mechanical Planarization" by L.C. Tinoco;INTEL CORP.; Rio Rancho, N.M. 319
8.F "Novel EPD Using White Light for ILD Appli-cation" by O. Matsushita, A. Yamane, A. Isobe;TOKYO SEIMITSU; Tokyo, JAPAN. 327
8.G "Issues Associated With Cleaning of NanosizeParticles" by W. Fyen, G. Vereecke, K. Xu, J.Lauerhaas, F. Holsteyns, R. Vos and P.W. Mertens;IMEC; Leuven, BELGIUM. 334Invited Paper
8.H "A Bifurcated Copper Removal Rate Mechanism"by P. Renteln, S. Sridharan and K.Y. Ramanujam;LAM RESEARCH; Fremont, CA. 344
— POSTER PAPERS —
8.1 "Evaluation of an Edge Load Ring to ReduceLevels of CMP Microscratchs" by J. McGrath;ANALOG DEVICES; Limerick, IRELAND; and A.Cockburn; APPLIED MATERIALS; Limerick,IRELAND. 351
8.J "Effect of Variations in Wafer Diameter, WaferShape and Thermal History on Pressure and StressDistributions During CMP" by J. Sorooshian and A.Philipossian; UNIV. of ARIZONA; Tuson, AZ.; M.Goldstein; INTEL CORP; Santa Clara, CA.; S.Beaudion; ARIZONA STATE UNIV.; Tempe, AZ.;and W. Huber; MITSUBISHI; Santa Clara, CA. 355
Friday, February 21, 2003
SESSION IX - 8:15 -10:00 A.M.VLSI MULTILEVEL INTERCONNECTIONC.M.P. CONSUMABLES - Part H
Chairman: Dr. David SteinSANDIA NAT'L LABS
Albuquerque, New Mexico
9.A "The Role of Pad Surface Morphology andMechanical Properties on the Material RemovalRate in CMP" by A. Bastawros, A. Chandra and Y.Guo; IOWA STATE UNIV.; Ames, IA. 365
9.B "Hard Porous Pad for Oxide Chemical MechanicalPolish" by G. Wu, L. Nguyen, P. Galvez and T. E.West; THOMAS WEST; Sunnyvale, CA. 3 7 3
9.C "Study of Slurry Selectivity and Endpoint Detectionin Copper CMP Process" by P.B. Zantye, A.K.Sikder, N. Gulan", A. Kumar; UNIV. of S. FLORIDA;Tampa, FL. 378
9.D "Semi-Abrasive Free Slurry Including AcidColloidal Silica for Copper Chemical MechanicalPlanarization" by J.H. Lim, M.H. Kim and J.D.Park; DONGJIN SEMICHEM; Kyungki-do, KOREA. 386
— POSTER PAPERS ---
9.E "A Study of Copper Planarization Using Ultra HighSelective Copper Slurry on Sub-100 nm Device" byD.H. Hong, J. H. Han, S.B. Lee, J. G. Kim, H.S.Sohn, J.H. Chung, S.R. Hah and K.M. Park;SAMSUNG ELEC; KOREA. 397
9.F "Behavior of EP-C600Y-75B Copper CMP SlurryUnder Extensive Handling" by R. Singh, B. Roberts;BOC EDWARDS; Santa Clara, CA.; R. Viscomi, M.Maxim, M. Diaz; CABOT MICRO; Aurora, IL.; andG. Conner; MYKROLIS; Billerica, MA. 402
9.G T w o Step Chemical Mechanical PolishingCharacteristics of Re-Used Silca Slurry" by K. J.Lee, Y.J. Seo; DAEBUL UNIV.; Chonnam, KOREA;C.B. Kim; DONG SUNG A & T; Kyunggi-do,KOREA; S.Y. Kim; ANAM SEMI; Kyunggi-do;KOREA; J.S. Park and W.S. Lee; CHOSUN UNIV.,Gwangju, KOREA. 406
9.H "High Performance CMP Pads for Copper/Low-k/Ultra-Low-k Wafer Processing" by M.J. Kulp, T.Crkvenac, C. Duong, G. Muldowney and D. James;RODEL; Newark, DE. 410
9.1 "CMP Tribological Study of Carrier Ring PlasticMaterials" by W.G. Easter, G.D. Willis;SEMPLASTICS; Daytona Beach, FL.; A.K. Sikder,P . Zantye and A. Kumar; UNIV. of S. FLORIDA;Tampa, FL. 414
9.J "CMP In-Situ Pad Conditioning Monitoring WithPadProbe"by B. Kalenian, B.L. Pautsch, B. Sennett;STRASBAUGH; San Luis Obispo, CA.; and N.V.Gitis, M. Vinogradev; CTR. for TRIBOLOGY;Campbell, CA. 418
9.K "Proper Filtration to Remove Large Particles FromCopper CMP Slurries" by M.H.S. Tseng, K. Carter,J. Marchese, M. Parakilas; CUNO; Meriden, CT.;and Q. Arefeen, T.B. Hackett and S. Hymes;ASHLAND CHEM; Dublin, OH. 422
9.L "CMP Barrier Slurry Development for TechnologyNodes Beyond 0.13 microns" by C. Ye, J. Quanci,M. VanHanehem, R. Lavoie; RODEL; Newark, DE. 426
9.M "Optimizing Diamond Conditioning Disks for theTungsten CMP Process" by M. Bubnick, S. Qamar;ABRASIVE TECH.; Lewis Ctr.; OH. 430
9.N "Dynamic Pot-Life and Handling Evaluation ofEPL2362 First Step Copper Slurry" by B.Johl, A.Manzonie; RODEL; Phoenix, AZ.; and R. Singh;BOC EDWARDS; Santa Clara, CA. 434
9.0 "Levasil Colloidal Silica Slurries on a SingleDamascene Wafer for Copper-CMP" by G.M. Hey,G. Passing, L. Puppe; H.C. STARCK; Leverkusen,GERMANY; J.C. Simpson; H.C. STARCK; Newton,MA.; and V. L. Terzieva; IMEC; Leuven, BELGIUM. 438
Coffee Break 10:00 A.M. - 10:15 A.M.
SESSION X -10:15 A.M. -11:15 A.M.VLSI MULTILEVEL INTERCONNECTION
C.M.P. MODEL & SIMULATION - Part H
Chairman: Dr. Katia DevriendtIMECLeuven, Belgium
10.A "A Mechanical Model for Erosion in CopperChemical Mechanical Polishing" by K. Noh, N. Sakaand J.H. Chun; MASSACHUSETTS INST. ofTECH.; Cambridge, MA. 445
10.B "Metal Density Optimization With CMP - BasesDummy Placement" by V.Sukharev, P. Zarkesh-Ha,C.H. Chang and W. Loh; LSI LOGIC; Milpitas, CA. 453Invited Paper
10. C "Integrated Multiscale and Multistep ProcessSimulation" by T.S. Cale, M.O. Bloomfleld, Y.H.Im, J. Seok, C.P. Sukam and J.A. Tichy;RENSSELAER POLYTECH. INST.; Troy, N.Y. 463Invited Paper
~ POSTER PAPERS ~
10.D "A Study on the Relationship Between WaferSurface Pressure and Wafer Backside Loading inCMP" by G. Fu; LAM RESEARCH; Fremont, CA.and A. Chandra; IOWA STATE UNIV.; Ames, IA. 475
SESSION XI -11:15 A.M. -12:15 P.M.VLSI MULTILEVEL INTERCONNECTION
Chairman: Dr. Ronald GutmannRENSSELAER POLYTECH. INST.Troy, New York
C M P SHALLOW TRENCH ISOLATION
11. A "STI Defects - They're Not Just CMP Created" byD.J. Stein, S.C. Everistand W.E. Jaramillo; SANDIANAT'L LABS: Albuquerque, N.M. 4 8 1
Invited Paper
l l . B "Challenges for the Integration of Shallow TrenchIsolation" by K. Devriendt, N. Heylen and J.L.Hernandez; IMEC; Leuven, BELGIUM. 4 9 2
Invited Paper
— POSTER PAPERS ---
1 l.C "Correlation Between Trench Depth and Defectsin the Shallow Trench Isolation ChemicalMechanical Polishing Process" by K.W. Kim, Y.J.Seo, S. W. Park; DAEBUL UNIV.; Chonnam,KOREA; S.Y. Kim; ANAM SEMI; Kyunggi-do,KOREA; and J.S. Park, W.S. Lee; CHOSUN UNIV.;Gwangju, KOREA. 5 O 3
CMP INSTRUMENTATION & HARDWARE
l l . D "A Novel Air Floating Head for Next GenerationCMP" by A. Isobe, A. Yamane, K. Tanaka, S.Yamada and M. Numoto; TOKYO SEIMITSU;Tokyo, JAPAN 5 0 9
Invited Paper
— POSTER PAPERS —
l l . E "Extending CMP to the 65 nm Node" by D A .Hansen, A. Namiki, F. Mitchel, S. Basak, M. Grief,F.O. Moore and J. Schlueter; SPEEDFAM-IPEC;Chandler, AZ.; and S. Tokitou, B.U. Yoon, N. Ohashiand S. Kondo; SELETE; Ibaraki, JAPAN. 521
l l .F "A Novel New Dispersion for CMP Industry" by S.Mohseni, R. Eaton, L. Gramm, G. Morr and D.Mahulikar; PLANAR SOLUTIONS; Queen Creek,AZ. 525
CMP-MIC LUNCHEON -12:15 - 2:00 P.M.
" NEW & EXCITINGDEVELOPMENTS IN
MEM's TECHNOLOGY-AN OVERVIEW"
Dr. Dale HetheringtonSANDIA NATIONAL LABSAlbuquerque, New Mexico
Session Organizer Dr. Rajiv K. Singh& Chairman UNIVERSITY OF FLORIDA
Gainesville, Florida
12.A "Emergent CMP Applications" by D. R. Evans;SHARP LABS; Camas, WA. 533Invited Paper
12.B "Planarization Issues for Three-DimensionalIntegrated Circuit and Wafer-Scale PackagingApplications" by R.J. Gutmann, A. Jindai, G.Rajagopalan, J.Q. Lu, J.J. McMahon, Y. Kwon andT.S. Cale; RENSSELAER POLYTECH. INST.;Troy, N. Y. 542Invited Paper
12.C "A History of Nickel - Iron CMP as Used in theMagnetic Head Industry" by C M . Pitcher;SEAGATE TECH.; Bloomington, MN. 550
