Freescale Semiconductor Document Number: MRF19125 ...AR C HIVE INF O RMATI O N A RCHIVE INFORMATION...

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MRF19125R3 MRF19125SR3

1RF Device DataFreescale Semiconductor

RF Power Field Effect TransistorsN--Channel Enhancement--Mode Lateral MOSFETsDesigned for PCN and PCS base station applications with frequencies from

1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifierapplications.

• Typical 2--Carrier N--CDMA Performance for VDD = 26 Volts,IDQ = 1300 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHzIS--95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measuredover a 30 kHz Bandwidth at f1 --885 kHz and f2 +885 kHz. DistortionProducts Measured over 1.2288 MHz Bandwidth at f1 --2.5 MHz andf2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.Output Power 24 Watts Avg.Power Gain 13.6 dBEfficiency 22%ACPR --51 dBIM3 --37.0 dBc

• Capable of Handling 5:1 VSWR, @ 26 Vdc, 1960 MHz, 125 Watts CWOutput Power

Features• Internally Matched for Ease of Use• High Gain, High Efficiency and High Linearity• Integrated ESD Protection• Designed for Maximum Gain and Insertion Phase Flatness• Excellent Thermal Stability• Characterized with Series Equivalent Large--Signal Impedance Parameters• RoHS Compliant• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating Symbol Value Unit

Drain--Source Voltage VDSS --0.5, +65 Vdc

Gate--Source Voltage VGS --0.5, +15 Vdc

Total Device Dissipation @ TC = 25°CDerate above 25°C

PD 3301.89

WW/°C

Storage Temperature Range Tstg -- 65 to +150 °C

Case Operating Temperature TC 150 °C

Operating Junction Temperature TJ 200 °C

Table 2. Thermal Characteristics

Characteristic Symbol Value Unit

Thermal Resistance, Junction to Case RθJC 0.53 °C/W

Table 3. ESD Protection Characteristics

Test Conditions Class

Human Body Model 2 (Minimum)

Machine Model M3 (Minimum)

Document Number: MRF19125Rev. 6, 4/2006

Freescale SemiconductorTechnical Data

MRF19125R3MRF19125SR3

1930--1990 MHz, 125 W, 26 VLATERAL N--CHANNELRF POWER MOSFETs

CASE 465B--03, STYLE 1NI--880

MRF191225R3

CASE 465C--02, STYLE 1NI--880S

MRF19125SR3

© Freescale Semiconductor, Inc., 2006, 2010. All rights reserved.

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2RF Device Data

Freescale Semiconductor


Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

Off Characteristics

Drain--Source Breakdown Voltage(VGS = 0 Vdc, ID = 100 μAdc)

V(BR)DSS 65 Vdc

Gate--Source Leakage Current(VGS = 5 Vdc, VDS = 0 Vdc)

IGSS 1 μAdc

Zero Gate Voltage Drain Leakage Current(VDS = 26 Vdc, VGS = 0 Vdc)

IDSS 10 μAdc

On Characteristics

Forward Transconductance(VDS = 10 Vdc, ID = 3 Adc)

gfs 9 S

Gate Threshold Voltage(VDS = 10 Vdc, ID = 300 μAdc)

VGS(th) 2 4 Vdc

Gate Quiescent Voltage(VDS = 26 Vdc, ID = 1300 mAdc)

VGS(Q) 2.5 3.9 4.5 Vdc

Drain--Source On--Voltage(VGS = 10 Vdc, ID = 3 Adc)

VDS(on) 0.185 0.21 Vdc

Dynamic Characteristics

Reverse Transfer Capacitance (1)

(VDS = 26 Vdc, VGS = 0, f = 1 MHz)Crss 5.4 pF

Functional Tests (In Freescale Test Fixture) 2--Carrier N--CDMA, 1.2288 MHz Channel Bandwidth Carriers. Peak/Avg = 9.8 dB@ 0.01% Probability on CCDF.

Common--Source Amplifier Power Gain(VDD = 26 Vdc, Pout = 24 W Avg, IDQ = 1300 mA, f1 = 1930 MHz,f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)

Gps 12 13.5 dB

Drain Efficiency(VDD = 26 Vdc, Pout = 24 W Avg, IDQ = 1300 mA, f1 = 1930 MHz,f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)

η 19 22 %

Intermodulation Distortion(VDD = 26 Vdc, Pout = 24 W Avg, IDQ = 1300 mA, f1 = 1930 MHz,f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; IM3 measuredover 1.2288 MHz Bandwidth at f1 --2.5 MHz and f2 +2.5 MHz)

IM3 --37 --35 dBc

Adjacent Channel Power Ratio(VDD = 26 Vdc, Pout = 24 W Avg, IDQ = 1300 mA, f1 = 1930 MHz,f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; ACPRmeasured over 30 kHz Bandwidth at f1 --885 MHz and f2 +885 MHz)

ACPR --51 --47 dBc

Input Return Loss(VDD = 26 Vdc, Pout = 24 W Avg, IDQ = 1300 mA, f1 = 1930 MHz,f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)

IRL --13 --9 dB

1. Part is internally matched both on input and output.

(continued)

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Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)

Characteristic Symbol Min Typ Max Unit

Functional Tests (In Freescale Test Fixture)

Two--Tone Common--Source Amplifier Power Gain(VDD = 26 Vdc, Pout = 125 W PEP, IDQ = 1300 mA, f1 = 1930 MHz,f2 = 1990 MHz, Tone Spacing = 100 kHz)

Gps 13.5 dB

Two--Tone Drain Efficiency(VDD = 26 Vdc, Pout = 125 W PEP, IDQ = 1300 mA, f1 = 1930 MHz,f2 = 1990 MHz, Tone Spacing = 100 kHz)

η 35 %

Third Order Intermodulation Distortion(VDD = 26 Vdc, Pout = 125 W PEP, IDQ = 1300 mA, f1 = 1930 MHz,f2 = 1990 MHz, Tone Spacing = 100 kHz)

IMD --30 dBc

Input Return Loss(VDD = 26 Vdc, Pout = 125 W PEP, IDQ = 1300 mA, f1 = 1930 MHz,f2 = 1990 MHz, Tone Spacing = 100 kHz)

IRL --13 dB

Pout, 1 dB Compression Point(VDD = 26 Vdc, IDQ = 1300 mA, f = 1990 MHz)

P1dB 130 W

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4RF Device Data



Figure 1. MRF19125R3(SR3) Test Circuit Schematic

RFINPUT

RFOUTPUTZ1 Z2

VBIAS

C1 C6

L1

DUT

VSUPPLY

Z3

C8

Z7

C5 C7

Z5 Z6

R3

C4

Z4

+

C10C3 C2

Z8

C11 C12 C13

+ ++

B1R1

R2C14

+

Board 0.030″ Glass Teflon®,Keene GX--0300--55--22, εr = 2.55

PCB Etched Circuit BoardsMRF19125 Rev. 5, CMR

Z1, Z7 0.500″ x 0.084″ MicrostripZ2 1.105″ x 0.084″ MicrostripZ3 0.360″ x 0.895″ MicrostripZ4 0.920″ x 0.048″ MicrostripZ5 0.605″ x 1.195″ MicrostripZ6 0.800″ x 0.084″ MicrostripZ8 0.660″ x 0.095″ Microstrip

C9

+

Table 5. MRF19125R3(SR3) Test Circuit Component Designations and Values

Designators Description

B1 Short Ferrite Bead, Fair Rite #2743019447

C1 51 pF Chip Capacitor, ATC #100B510JCA500X

C2, C7 5.1 pF Chip Capacitors, ATC #100B5R1JCA500X

C3, C10 1000 pF Chip Capacitors, ATC #100B102JCA500X

C4, C11 0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS

C5 0.1 mF Tantalum Chip Capacitor, Kemet #T491C105M050

C6 10 pF Chip Capacitor, ATC #100B100JCA500X

C8 10 mF Tantalum Chip Capacitor, Kemet #T491X106K035AS4394

C9, C12, C13, C14 22 mF Tantalum Chip Capacitors, Kemet #T491X226K035AS4394

L1 1 Turn, #20 AWG, 0.100″ ID

N1, N2 Type N Flange Mounts, Omni Spectra #3052--1648--10

R1 1.0 kΩ, 1/8 W Chip Resistor

R2 220 kΩ, 1/8 W Chip Resistor

R3 10 Ω, 1/8 W Chip Resistor

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Figure 2. MRF19125R3(SR3) Test Circuit Component Layout

MRF19125 Rev 5

R1

R2

R3

C5 C4 C3

C1 C6

C12 C13

C8C7

C2

C14

C11L1B1

CUTOUT

C10

C9

Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/-logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impacton form, fit or function of the current product.

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6RF Device Data



TYPICAL CHARACTERISTICS

--55

--50

--45

--40

--35

--30

--25

--20

10 1504

Figure 3. 2-Carrier CDMA ACPR, IM3, Power Gain andDrain Efficiency versus Output Power

Figure 4. Intermodulation DistortionProducts versus Output Power

Pout, OUTPUT POWER (WATTS) PEP

Figure 5. Third Order IntermodulationDistortion versus Output Power

IM3,THIRDORDER

INTERMODULATIONDISTORTION(dBc)

,DRAINEFFICIENCY(%),

ηGps,POWER

GAIN(dB)

Pout, OUTPUT POWER (WATTS Avg.) N-CDMA

IM3(dBc),ACPR

(dBc)

f, FREQUENCY (MHz)

INPUTRETURNLOSS

(dB)

,DRAINEFFICIENCY(%)

η

Figure 6. 2-Carrier N-CDMA BroadbandPerformance

Figure 7. CW Performance

0

5

10

15

20

25

30

--70

--63

--56

--49

--42

--35

--28

1 10 40

VDD = 26 Vdc, IDQ = 1300 mAf1 = 1958.75 MHz, f2 = 1961.25 MHz1.2288 MHz Channel BandwidthPeak/Avg. = 9.8 dB @ 0.01% Probability (CCDF)

--70

--60

--50

--40

--30

--20

5

11

23

29

35

41

10 150

η

4


IMD,


VDD = 26 VdcIDQ = 1300 mAf = 1960 MHz100 kHz Tone Spacing

,DRAINEFFICIENCY(%),

ηGps,POWER

GAIN(dB)

IM3(dBc),ACPR

(dBc),IRL,

1100 mA1700 mA

1300 mA

IDQ = 900 mA

1500 mA

12

14

16

18

20

22

24

--60

--50

--40

--30

--20

--10

0

1930 1940 1950 1960 1970 1980 2000

VDD = 26 VdcPout = 24 Watts (Avg.)IDQ = 1300 mA

2-Carrier N-CDMA, 2.5 MHz Carrier Spacing1.2288 MHz Channel BandwidthPeak/Avg. = 9.8 @ 0.01% Probability (CCDF)

Gps

ACPR

η

IRL

Pout, OUTPUT POWER (WATTS)

,INPUTPOWER

(WATTS),Gps,POWER

GAIN(dB)

Pin

0

2

4

6

8

10

12

14

0

8

16

24

32

40

48

56

10 1002 200

VDD = 26 VdcIDQ = 1300 mAf = 1960 MHz

Gps

P in

η

,DRAINEFFICIENCY(%)

η

η

IM3

Gps

ACPR

17

100--80

7th Order

5th Order

3rd Order

100

VDD = 26 Vdcf = 1960 MHz100 kHz Tone Spacing

1920 1990

IM3

33

34

35

36

37

38

--32

--31

--30

--29

--28

--27

24 24.5 25 25.5 26 26.5 27 27.5 28

VDD, DRAIN SUPPLY (V)

Figure 8. Two-Tone Intermodulation Distortion andDrain Efficiency versus Drain Supply


IMD,

,DRAINEFFICIENCY(%)

η

η

IDQ = 1300 mAf = 1960 MHz100 kHz Tone Spacing

IMD

32 --33

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TYPICAL CHARACTERISTICS

210

1010

TJ, JUNCTION TEMPERATURE (°C)

This above graph displays calculated MTTF in hours x ampere2

drain current. Life tests at elevated temperatures have correlated tobetter than ±10% of the theoretical prediction for metal failure. DivideMTTF factor by ID2 for MTTF in a particular application.

108

107

MTTFFACTOR(HOURSXAM

PS2 )

90 110 130 150 170 190100 120 140 160 180 200

109


Gps,POWER

GAIN(dB)

12

12.5

13

13.5

14

10 1504

Figure 9. Two-Tone Power Gain versusOutput Power

Figure 10. Two-Tone Broadband Performance

10

15

20

25

30

35

40

--35

--30

--25

--20

--15

--10

--5

1920 1930 1940 1950 1960 1970 1980 1990 2000

IDQ = 1700 mA

1500 mA

900 mA

Gps,POWER

GAIN(dB),,DRAINEFFICIENCY(%)

η

η

IMD INTERMODULATIONDISTORTION(dBc)

IMD,

f, FREQUENCY (MHz)

INPUTRETURNLOSS

(dB)

IRL,

IRL

Gps

100 kHz Tone SpacingIDQ = 1300 mA

Figure 11. Intermodulation Distortion Productsversus Two--Tone Tone Spacing

--25

100 1000 5000

Δf, TONE SPACING (kHz)

--30

--35

--40

--45

--50

--55


IMD,

VDD = 26 VdcIDQ = 1300 mAf = 1960 MHz

VDD = 26 VdcPout = 125 W (PEP)

100

1300 mA

1100 mA

VDD = 26 Vdcf = 1960 MHz100 kHz Tone Spacing

7th Order

5th Order

3rd Order

Figure 12. MTTF Factor versus Junction Temperature

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8RF Device Data



N--CDMA TEST SIGNAL

f, FREQUENCY (MHz)

--100

0

Figure 14. 2--Carrier N--CDMA Spectrum

--10

--20

--30

--40

--50

--60

--70

--80

--90

--ACPR @ 30 kHzIntegrated BW

+ACPR @ 30 kHzIntegrated BW

--IM3 @1.2288 MHzIntegrated BW

+IM3 @1.2288 MHzIntegrated BW

1.2288 MHzChannel BW

61.5 4.530--1.5--3--4.5--6--7.5 7.5

(dB)

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Figure 13. Series Equivalent Source and Load Impedance

fMHz

ZsourceΩ

ZloadΩ

1930

1960

1990

1.43 -- j5.01

1.56 -- j4.93

1.51 -- j4.88

0.75 -- j0.93

0.71 -- j0.89

0.68 -- j1.02

VDD = 26 V, IDQ = 1300 mA, Pout = 24 W (Avg.)

Zo = 10Ω

f = 1930 MHz

f = 1990 MHz

f = 1930 MHz

f = 1990 MHz

Zsource = Test circuit impedance as measured fromgate to ground.

Zload = Test circuit impedance as measuredfrom drain to ground.

Zsource Z load

InputMatchingNetwork

DeviceUnder Test

OutputMatchingNetwork

Zsource

Zload

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10RF Device Data



NOTES

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PACKAGE DIMENSIONS

CASE 465B--03ISSUE DNI--880

MRF19125R3

NOTES:1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M--1994.2. CONTROLLING DIMENSION: INCH.3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY

FROM PACKAGE BODY.4. RECOMMENDED BOLT CENTER DIMENSION OF

1.16 (29.57) BASED ON M3 SCREW.

DIM MIN MAX MIN MAXMILLIMETERSINCHES

A 1.335 1.345 33.91 34.16B 0.535 0.545 13.6 13.8C 0.147 0.200 3.73 5.08D 0.495 0.505 12.57 12.83E 0.035 0.045 0.89 1.14F 0.003 0.006 0.08 0.15G 1.100 BSC 27.94 BSCH 0.057 0.067 1.45 1.70K 0.175 0.205 4.44 5.21

N 0.871 0.889 19.30 22.60Q .118 .138 3.00 3.51R 0.515 0.525 13.10 13.30

STYLE 1:PIN 1. DRAIN

2. GATE3. SOURCE

1

3

2

D

G

K

C

E

H

F

Q2X

MAMbbb B MT

MAMbbb B MT

B

B(FLANGE)

SEATINGPLANE

MAMccc B MT

MAMbbb B MT

A A(FLANGE)

T

N (LID)

M (INSULATOR)

S

MAMaaa B MT

(INSULATOR)

R

MAMccc B MT

(LID)

S 0.515 0.525 13.10 13.30

M 0.872 0.888 22.15 22.55

aaa 0.007 REF 0.178 REFbbb 0.010 REF 0.254 REFccc 0.015 REF 0.381 REF

4

NOTES:1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M--1994.2. CONTROLLING DIMENSION: INCH.3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY

FROM PACKAGE BODY.

DIM MIN MAX MIN MAXMILLIMETERSINCHES

A 0.905 0.915 22.99 23.24B 0.535 0.545 13.60 13.80C 0.147 0.200 3.73 5.08D 0.495 0.505 12.57 12.83E 0.035 0.045 0.89 1.14F 0.003 0.006 0.08 0.15H 0.057 0.067 1.45 1.70K 0.170 0.210 4.32 5.33

N 0.871 0.889 19.30 22.60R 0.515 0.525 13.10 13.30

STYLE 1:PIN 1. DRAIN

2. GATE3. SOURCE

1

SEATINGPLANE

2

D

K

C

E

H

F

MAMbbb B MT

B

B(FLANGE)

MAMccc B MT

MAMbbb B MT

A A(FLANGE)

T

N (LID)

M (INSULATOR)

MAMccc B MT

MAMaaa B MT

R (LID)

S (INSULATOR)

S 0.515 0.525 13.10 13.30

M 0.872 0.888 22.15 22.55

bbb 0.010 REF 0.254 REFccc 0.015 REF 0.381 REF

aaa 0.007 REF 0.178 REF

CASE 465C--02ISSUE DNI--880S

MRF19125SR3

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12RF Device Data



REVISION HISTORY

The following table summarizes revisions to this document.

Revision Date Description

6 Dec. 2010 • MRF19125 Rev. 6 data sheet archived. Data sheet split due to change in part life cycle. See MRF19125--1Rev. 7 for MRF19125SR3 and MRF19125--2 Rev. 8 for MRF19125R3.

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Freescale Semiconductor reserves the right to make changes without further notice toany products herein. Freescale Semiconductor makes no warranty, representation orguarantee regarding the suitability of its products for any particular purpose, nor doesFreescale Semiconductor assume any liability arising out of the application or use ofany product or circuit, and specifically disclaims any and all liability, including withoutlimitation consequential or incidental damages. Typical parameters that may beprovided in Freescale Semiconductor data sheets and/or specifications can and dovary in different applications and actual performance may vary over time. All operatingparameters, including Typicals, must be validated for each customer application bycustomers technical experts. Freescale Semiconductor does not convey any licenseunder its patent rights nor the rights of others. Freescale Semiconductor products arenot designed, intended, or authorized for use as components in systems intended forsurgical implant into the body, or other applications intended to support or sustain life,or for any other application in which the failure of the Freescale Semiconductor productcould create a situation where personal injury or death may occur. Should Buyerpurchase or use Freescale Semiconductor products for any such unintended orunauthorized application, Buyer shall indemnify and hold Freescale Semiconductorand its officers, employees, subsidiaries, affiliates, and distributors harmless against allclaims, costs, damages, and expenses, and reasonable attorney fees arising out of,directly or indirectly, any claim of personal injury or death associated with suchunintended or unauthorized use, even if such claim alleges that FreescaleSemiconductor was negligent regarding the design or manufacture of the part.

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Document Number: MRF19125Rev. 6, 4/2006

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