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Frequency variations of transistor parameters Item Type text; Thesis-Reproduction (electronic) Authors Latorre, Victor Robert, 1931- Publisher The University of Arizona. Rights Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author. Download date 25/08/2021 11:14:08 Link to Item http://hdl.handle.net/10150/319587
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Page 1: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

Frequency variations of transistor parameters

Item Type text; Thesis-Reproduction (electronic)

Authors Latorre, Victor Robert, 1931-

Publisher The University of Arizona.

Rights Copyright © is held by the author. Digital access to this materialis made possible by the University Libraries, University of Arizona.Further transmission, reproduction or presentation (such aspublic display or performance) of protected items is prohibitedexcept with permission of the author.

Download date 25/08/2021 11:14:08

Link to Item http://hdl.handle.net/10150/319587

Page 2: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS

by

V icto r Re Latorre

A Thesis

submitted to the facu lty of the

Department of E le c tr ic a l Engineering

in p a r t ia l fu lfillm en t of the requirements fo r the degree of

MASTER OF SCIENCE

in the Graduate College, U niversity of Arizona

1956

Approved:D irec to r of Thesis ^ ( / Date r

Page 3: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

7 7 ^ 6 -77

This th e s is has been submitted in p a r t ia l fu lf illm e n t of req u ire ­

ments fo r an advanced degree a t the U n iversity of Arizona and is

deposited in the Library to be made availab le to borrowers under

ru les of the L ibrary a B rie f quotations from th is th es is are

a llw a b le i'Jithout. special: permission# provided th a t accurate

acknowledgment of source i s made* Requests fo r permission fo r

extended quotation from or reproduction of th is manuscript in

whole or in p art may be granted by the head of the major depart— ‘

ment or the dean of the Graduate College when in th e i r judgment

th e proposed use of the m ateria l is in the in te re s ts of scholar^

■Ship* In a l l o ther instances# however# perm ission must be obtained

from the author*

.s im m s ;

Page 4: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

flie author ivlshes to express h is apprecia tion fo r the a s s is ­

tance and encouragement of Dr«. fhom s. Le Martin^ J r . , head of the

Department of E le c tr ic a l Engineering* Valuable assis tance was

a lso received from Mr. A. H* Perkins and Ifr* D» J . Sakrison of

the Department of E le c tr ic a l Engineering. The author also wishes

to express h is g ra titu d e to h is w ife, Haney, who typed the f in a l

manuscripfco. •

fhe fin a n c ia l a ssis tan ce supplied by the Anry E lectron ics

Fhoving Grounds a t Fort Huachuca through the Department of E lec­

t r i c a l Engineering i s hereby g ra te fu lly acknowledged e

Page 5: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

f ABXS OF COEMrs:

In troduction .

Ohapber .1 % e Common E m itter Equivalent C ircu it

1-1 In troduction

1-2 D efin ition of “A11 Parameters

1-3 Development of The Comaon E m itter Hybrid Para-

> meter Equivalent G lrouit For C irc u it Design

Chapter 2 S ta tic \¥ a lu e s of Parameters and Independence

Of Frequency of and ' P :_ - '"-"P-"'.■|;,fi'Ti«»'ni>«... ■ inf ii irriiin • '• ' " "

■ r":'P2-l In troduction - ■ '"P '■ ■

2-2 Static'Measurements, of./Parameters 1

2-3 E ffect of Frequency"of 1 and

Chapter 3, The V aria tion q1 $ With F requency

3—1 In troduction • • . -

3-2 ... T heore tica l E aslsrgor She AC. Measurement of

3-3 - Experimental R esults - Comparison of AC and DC

^ ValUes of ^ ■ .

Chapter 4 The V aria tion of A ^ With "Fr equency / .

4-1 In troduction

• 4-2. . • D erivation o£ L ^ From The Input C irc u it •„ :CW.-S, I r„ :i in-rmui.iiiriwi; ... . w. ,T « ,rm r f 'K r n r u ii Ti f - . t -r V.. rz:- .

, ‘ - ' , ' , . : . . " '

4“3 The' E ffec t of A ^ on The Upper Cutoff Frequency

of The T ran s is to r .

Chapter $ M odification of The Common E m itter Hybrid A P a ra - ..

met e r Sduivalent C ircu it

I»ge

1

. 1

: ' . 3 'r

10

10

13

14

14

- IS

23

23

27

Page 6: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

5-1 IQitroduGtlon .

5-2 ffae E ffec t of The Bas©Spreading Resistance

on, dev io u s R esults . .

Chapter 6 Bandpass - T ran sis to r Amplifiers

6-1 In troduction

6-2 D erivation of The Expression For The Gain ^ ..

'= of Tuned T ransis to r Amplifiers •' . ' . .

6-3 Center Frequency of Tuned T ran sis to r Am plifiers ■

6-4 Proposed Method of Design For luned T ransis to r

6-5 N eu tra liza tion of funed T ran sis to r Amplifiers

6-6 C h a rac te ris tic s of An Experimental funed gran—

-s i s t o r 'Am plifier

page31

31

34

35

40

44

53

58

Page 7: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

ILIalBTRATIOm

1-1 Gpnmioii Hybrid Parainete.g;.EgniYalen t C ircu it

1-2 Change in Nomenclature j Goromon E iiiitter5 Hybrid

Parameter Equivalent C ircu it ‘ .

1—3 Equivalent C ircu it With Connected Load

1-4 S im plified Equivalent:. C ircu it ' -

1-5 F in a l Equivalent C i r c u it ' .

g f l l^ p p t_ r;-C h a ra c te ris tic s i

2-2 Output C h a rac te ris tic s

3-3- Girfeult IJsed to Measure As A Function of F re-

;.-4 - mehWrl: - ' i v - - ; - -V ■.:

3-2 Olass.' A‘Equivalent C ircu it of Figure 3-1

%-“% % f la t io n of With Frequency . ;

3-4 C irc u it Used to Determine Frequency Response of $

3.^5: Va ria tio n o f $ With Frequency"

4-1 C ircu it Used to Determine The E ffect o f Frequency

• ;■ \ ; '' - .■ . ,v >: ;4-2 C la s s ii Equivalent Input C ircu it -

4-3 ; ihe V a ria tio n . of With Frequency : ' •, ■

4-4 Ih q ;E iieGi °1 A^o on She Upper Cutoff Frequency,

5-1 Correc t. Form of She' Common E m itter Efcrbrid A Param eter; ,.

■ ? - Equivalent C ircu it v .

6-1 Equivalent C ircu it For A Tuned T ransis to r A m plifier

page2

4

5:

B

9

11

12

15

16

19

21 22

25

26

28

30

32

{(One E tage) 36

Page 8: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

6—2 C ircu it Used to B61>e rid.ne the C eaier Frequencypage

• of Tuned I ra n s is to r Am plifiers 42

^-3 A lterna te Form of F igure (6*2) . 42

6-4 Location of Poles and Zeroes y Actual G lro u lt: ' ' 46

6-5 Location of Poles- and Zeroes - E ffec tiv e Equivalent

C ireu it ' : . ' - ' 47

6-6 . Bffec tiv e Equiv a len t C ircu it - Grounded E m itter ;

. ; Amplifier ’ . ■ 48 ‘

6-7 C ircuit Used to Determine E ffec tive ¥alues of Para—

i meters - . '. " ■ 49

6-6 Erequency Response of The ■ Input C ircu it 51 .

; 6-9 _31nmt':&%pacltameuyat,'%6%ageC8aln 52

6-10 One Stage T ran sis to r Amplifier With funed Input

and:;Output C ircu its ' 54

6-11 " N eutralised . Grounded Em itter .funed Am plifier ' 55

6-12 Equivalent C irc u it of -A N eutralized Grounded E m itter

■i Amplifier ■ ■■ " ■ ' . 56

6-13 Grounded-Emitter Tuned T ran sis to r Amplifier • . 60

6 -I4 Frequency Response of A Grounded Em itter Tuned

"Eraasistor Am plifier, . : . 61,

Page 9: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

IfflRQBUCTICM

As th is paper i s concerned w ith the t r a n s is to r as a c ir c n it

element, i t i s apparent th a t frequency e ffe c ts are im portant, and

th a t we must know these e ffe c ts a In the design of p ra c tic a lly any

e lec tro n ic c i r c u i t , the frequency response of the system i s of v i t a l

in te re s t * I h e 'usual design requirements specify the desired frequency

response of ’ the system and, from these and other requirem ents, the

system can be designed i f the parameters o f. the ac tive elements o f

the system are known,

Thus, i t i s necessary th a t the e ffec ts of frequency on the para­

meters of the t r a n s is to r must be estab lished before any good design

can be developed«, I ;.' : 'I;.,1 v :'l> '

Page 10: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

1

Chapter 1

THE COMMON EMITTER EQUIVALENT CIRCUIT

(1 .1 ) Introduction

The common em itter equivalent c ir c u it was developed to fa c i l i t a t e

design of tra n sis to r c ir c u its • I t i s true th at the common base hybrid

(or “h”) parameter equivalent c ircu it i s more widely used, but the

author f e e ls that i t possesses a disadvantage that n ecess ita tes the

development of a d ifferen t form of equivalent c ir c u it . This disad­

vantage becomes apparent from a consideration of most e lectron ic c ir ­

c u it s . Nearly a l l conventional tra n sis to r c ircu its arc designed for

the common emitter connection, not for the common base connection from

which the h-parameter equivalent c ir c u it was designed.

(1 .2 ) D efin ition of "A" parameters

The c ir c u it diagram of the common em itter hybrid parameter equiva­

len t c ir c u it i s shown in Figure ( l . l ) . The four hybrid parameters

are defined as fo llo w s:

A^i i s the input resista n ce with the co llec to r shorted to the

em itter.

1 . The o r ig in a l d e fin it io n s of the hybrid A parameters were made by Dr. Thomas L. 1-fe.rtin, Josef Gartner, and Aladdin Perkins at the U niversity of Arizona in December, 1954*

d . i )

Page 11: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

f/G . ( / - / ) Common Etn/£tc.r j tfybnc/P A r A M c X ^ r E & u iv » /e y > r C trcu /C

Page 12: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

A^2 i s the output admittance with the base an open c ir c u it .

j (1*2)" h . - . o

Al2 v°l^ aSe feedback factor w ith the base an open c ir cu it •

‘ tv; 4nt' - (1 -3)

A ^ i s the r a tio of the c o lle c to r current to the base current

w ith the co lle c to r shorted to the em itter.

A,, = _&5_ = .^ 5 /

The factor A ^ , which i s defined as the current am plification

fa c to r , i s more commonly id en tif ied by the symbol-^ • Therefore,

the equivalent c ir c u it assumes the form shown in Figure (1 .2 )•

(1 .3 ) Development of The Common Emitter Hybrid Parameter Equivalent C ircu it For C ircu it Design

The equivalent c ir c u it drawn in Figure (1 .2 ) i s not su ited to

a stra igh t forward c ir c u it design . This seems to be a disadvantage

common to a l l two-generator equivalent c ir c u i t s . This c ir c u it can

be further sim p lified by evaluating the voltage generator in the input

c ir c u it . This i s the generator narked A^Vc in Figure (1 .2 ) .

Assume that the tr a n s is to r has some arbitrary three-term inal

load connected as shown in Figure (1 .3 )• Three new terms are defined

as fo llow s:

Page 13: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

u

a

+

F ^ /G . ( / - 2 ) C tf/M & e f n n o m e n c l a t u r e ;

C o m m o n B r n t t t e r , H y b n J

Parameter fciu/vaknt Circuit"

Page 14: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

5

3o-

+

Q(hn

cTc

z z Vc

V

m ’ T r ~ b

f~/Gr. ( /~3) E quivalent C ir c u tt IV/thConnec.tecf Z<?a</

Page 15: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

■= Input, impedance of the connected load c ir c u it .

Zq =z Input impedance o f the entire passive co llec to r c ir c u it .

Zj.j = Mutual impedance of the en tire passive c o lle c to r c ir c u it •

These terms are indicated in Figure (1 .3 )•

From the c ir c u it , i t can be seen th at th e co lle c to r voltage Vq i s

Now, define a new parameter so that the c ir c u it can be further

sim p lified in to a more u se fu l form. This parameter, A^., i s the

voltage am p lification , measured from the base to the c o lle c to r , and

i s given by:

This ra tio i s u su a lly a negative, complex number for the common

em itter c ir c u it .

given by:

(1 .5)

Therefore,

(1 .6)

(1 .7 )

From the equivalent c ir cu it of Figure (1 .3 ) , and from the equations

previously developed, the voltage gain parameter i s :

(1.8)

Page 16: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

Thus, the negative component of the input impedance becomes:

- * • ^ - A ^ ( 1 .3 , ,

Because the base to co lle c to r gain, A c , i s normally negative.

th is i s a negative impedance. Therefore, the to ta l input impedance

of the c ir c u it i s :

= A,, - A,z 0z* a .n)or-7 _ /ft/2C,ZZ/ (1.12)

And the equivalent c ir c u it assumes the form shown in Figure (1 ,4 )•

Because the operation of a tra n sis to r changes with changes in

s ig n a l frequency, the equivalent c ir c u it must in d icate the cause of

the changes, I t was assumed that the frequency changes were the resu lt

of reactive components a c tu a lly associated with the tr a n s is to r . This

w il l be discussed in more d e ta il la te r : at th is p oin t, the f in a l equi­

valent c ir c u it i s assumed to have the form shown in Figure (1*5) •

Page 17: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

8

72

E E

jF/G* ( Si mp/ / / t ec/ £<yutvf>/ent Circuit

Page 18: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

F/G-. (1-5) f /naf £qu/vakvt C/rco<£

vo

Page 19: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

10

Shapber 2

STATIC VALUES OF PAEAmEHS AICl Iffl38FBE)EHDl OF FRiQCBffil OF Ay AHD

(2ol) In irodystlon

I t - 2 3 necessary to-Mow- th e s ta t i c c h ay ae ta ris tie s of the tran-= .

s i s to r before th e e ffec ts of freqmeney can be deterainecL . $he s ta t i c

or d ire c t cu rren t values fo r the previously defined parameters were

deteraiined by ordinary methods,, described b r ie f ly in the paragraphs

th a t follow* ' , _

• (2q2) S ta t ic Jfeasurements of Param eters

' #he input mad output c h a ra c te r is tic curves fo r the t r a n s is to rs

were obtained. w ith a Libraseope X-Y p lo tte ro For th e output character-”

3 s t ie s 9 the t r a n s is to r was operated a t d iffe re n t parametric values

of ' base currentg and the 'c o lle c to r voltage v a ried from zero v o lts to

th e aagtmom allowable vo ltage without exceeding the znaximum. c o lle c to r

dissapationo , The p lo t te r recorded a continuous curve showing c o lle c to r

curren t as. a function of c o lle c to r voltage fo r each param etric value

of base current® - .

/ fhe input c h a ra c te r is tic s Were obtained in a s im ila r irnnner^ th e ;

c o lle c to r voltage serving as the fam ily parameter<. Shus^ fo r each value

of c o lle c t or voltage^, th e base voltage was varied from zero, v o lts up . '

to the maximum allow able;value, and th e p lo tte r recorded a continuous

Page 20: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

( * * > j .^ 3 y / t e h /d

Page 21: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

t - H

/C

— 6 -t— ■ I 8 L-i.-l VZ--L4 _ |_ 4 :. SL4_ ^ „ |_ ^ 6 4

1 . i L------i.—| . —•"'V' V o * 7 1 0 j—• 1 -• i— j— | _j .!.!

: I I | ; : | f i ; : , : I J I , I I

Page 22: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

curve of th e base cu rren t as a function of the base v o ltag e» Figures

(2ol) and (2 ©2) show sample c h a ra c te r is tic curves fo r both the input

and output, c ir c u i ts of the tra n s is to r ,. From the previous d e fin itio n s

of th e .hybrid param eters, i t is c lea r th a t they can be determined

d ire c tly from th ese curves * ..

(2*3) E ffec t of Frequency on A- -, And Aqq

The dynamic or a lte rn a tin g current values of and AP? were

determined from measurements made by Kf*®. David 1© Sakrison of th e

E le c tr ic a l Engineering department a t th e U niversity of Arizona, and .

th e values obtained are in a,greement (w ith in 10 fa) w ith the s ta t ic

values© Therefore, from these r e s u l ts , i t can be sa id th a t A and

A__ are constant w ith frequency©. This i s in accordance w ith the equ i-

.valent c irc u it shown in Figure (1*5)« From th is you can see th a t

th e changes in input and output impedance are accounted fo r by the

capacitances present in these c irc u its 6 The voltage feedback fa c to r ,

a lso has an e f fe c t upon the input impedance© This w il l be d is ­

cussed in more d e ta i l in a l a t e r chapter©

Page 23: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

14

Chapter 3

THE VARIATION OF f WITH FREQUEICY

(3 #l) Introduction

In Chapter two, i t was noted that the value of the current ampli­

f ic a t io n factor f , equal to was determined from the s ta t ic

ch a ra cter istic curves. The purpose of th is chapter i s to show, theo­

r e t ic a l ly , that ^ i s independent of frequency and, then to v e r ify

th is theory by experiment. This assumption that ^ i s not frequency

dependent disagrees with the generally accepted theory which assumes

frequency dependence# However, i t i s f e l t that the approach presented

in th is chapter merely depends upon a simpler d e fin it io n of the base

current, 1^. S p e c if ic a l ly , in the theory proposed, the base current

i s assumed to be only in the impedance designated as •

In the more common theory of frequency dependence of ^ , the base current

i s assumed to be a l l of the current in to the base term inals# I t should

be clear from the equivalent c ir c u it shown in Figure (l#5) that th is

new notion greatly f a c i l i t a t e s the design of a multitude of e lectron ic

c ir c u its using tra n sis to rs •

(3 .2 ) T heoretical Basis For The AC Measurement of $

The c ircu it used for determining the AC value of @ i s shown in

Figure (3 .1 ) . The operation o f the c ir c u it i s best understood from

Page 24: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

15

cc

/ r/£ . (3- / ) (/sc</ ta T/Peazure*P 3 s 3 F u n c T /o /7 o f F r e q u e n c y

Page 25: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

16

it*

+

Vc

Fitn —/ •/ A 2-i /fL

6 3 - 2 ) C / 3 5 5 /4 EQutVA/eut C i r c u i t

o f . /v s - t/rc ( 3 - i )

Page 26: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

17

th e Class A equivalent c i r c u i t in Figure (3 .2 ) . A ctually , the c ir c u it

i s e sse n tia lly a bridge c i r c u i t . and Cx are ad justed to produce

a n u ll de tecto r reading a t a number of d iffe re n t s ig n a l frequencies

provided by the s ig n a l source V. The c o lle c to r s ig n a l voltage i s mon­

ito re d with a Cathode Ray Oscilloscope a t a l l times to assure th a t th e

condition of C lass A operation always e x is ts .

Now, a t bridge balance:

(3-1)

Hence,

(3 .2)

The loop equation around the input c ir c u i t i s :

(3 .3 )

Or:

(3 .4 )

S u b s titu te equation (3*2).

(3 .5 )

Cancel 1^, rep lace with R% The

re s u lt i s :

(3 .6)

Where:I

' A„ C/A/ (3 .7 )

Page 27: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

In the steady s t a t e , equation (3 .6) reduces to :

r = A , t R M a - j (3 ‘10)

This equation provides the experimental basis fo r estab lish in g

the frequency v a ria tio n ^ *

(3 *3) Experimental R e su lts - Comparison of AC And DC Values of

From the c ir c u it presented in the previous sec tion , data were

taken fo r a number of t r a n s is to r s . Plots were then made of ^ as a

function of frequency. These curves are shown in Figure (3 .3 ) .

From Figure (3 .3 ) , i t i s evident th a t ^ is independent of frequency.

However, to more firm ly e s ta b lish these r e s u l ts , another method was

used, as described below.

I f the output c ir c u i t of the t r a n s is to r is broad-banded (R^

made very sm all) and a constant value of s ig n a l base curren t m aintained,

i t is possible to determine the frequency response of a new parameter,

ft • The d ifference in and l ie s in the assumption of the path

fo r the base c u rre n t. In Figure (1 .5 ), the base current i s shown only

in the impedance 9 the parameter a p p lie s .

By defining the base cu rren t as the current in to the input term inals

Page 28: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

0 0

2 A/ * 96

— W

| —|- |

n 6

m - : - ;

11

ill;.!'!*4—• — i * —|- -

e m ^ / . i ; \ r ' « * s > s )VftftatfonF(&. (3-3)

1 [_ J L

Page 29: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

20

of the t r a n s is to r , we must use another parameter to represent the cur­

ren t am plification fa c to r . This parameter i s .

The c ir c u i t used to determine f t* as a function of frequency is

given in Figure (3.4)* Because R2 i s very sm all, i t i s v a lid to assume

th a t the output c irc u it i s sh o r t-c irc u ite d , was determined fo r

numerous values of s ig n a l frequency from the following expression:

(3*11)

Now, because the output c ir c u i t was sh o r t-c irc u ite d , the r o l l - o f f

of the frequency response curve i s caused so le ly by the input c i r c u i t .

The frequency response c h a ra c te r is tic of the input c ir c u i t was d e te r­

mined th e o re tic a l ly . Figure (3*5) shows the curves fo r each of the

above-mentioned se ts of d a ta . These curves are in close agreement

and, th e re fo re , i t can be sa id th a t the apparent change in f t w ith

frequency can be a ttr ib u te d to the input c irc u it and th a t f t i s

constant with frequency.

Page 30: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

21

R t

V 7x - v r v n ^

zv) V:— V,bk

VTVAJ

cT - V"

/V(z. (3 -^ ) CtrcutC Usee/ to fietermmQf r e q u e n c y R e s p o n s e o f p

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Page 32: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

23

Chapter 4

THE VARIATION OF A_ ICTH FREQUENCY

(4#1) In troduction

The voltage feedback fa c to r , A ^ , i s th e most d i f f ic u l t of the

hybrid A parameters to measure. I t i s possible to determine the s ta t i c

value of A ^ from the s t a t i c input c h a ra c te r is tic curves, but th is is

extremely d i f f ic u l t because of the very c lose spacing of th e curves.

However, the approximate average value of A ^ fo r some 40 d iffe ren t

junction t ra n s is to rs i s Q.5 x 10"^. This value i s assumed to be accu­

ra te w ith in an order of m gn itude . This might seem to be a ra th e r

poor apiiroximation. However, i t should be noted th a t A ^ is a very

small quan tity and, as w i l l be shown in subsequent paragraphs, i t

can usually be neglected.

The dynamic values of A-^ were determined a t various frequen­

c ie s . The techniques used in measuring A ^ and the conclusions drawn

from these measurements a re discussed in th e remainder of th is chapter.

(4*2) D erivation of A ^ From The Input C irc u it

A12 was previously defined as the r a t io of the base voltage to

the c o lle c to r voltage w ith the base an open c irc u it ( equation 1.3 ) .

From th is d e fin itio n , i t seems lo g ica l to apply a constant s ig n a l

vo ltag e♦ to the c o lle c to r and measure the re su ltin g open-c ircu it

Page 33: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

base voltage# The c i r c u i t used is shown in Figure (4#l) • The

A equivalent c irc u it of the input c i r c u i t of the t r a n s is to r is

in Figure (4 ,2 ) . From Figure (4*2), i t i s e a s ily seen th a t :

R earrang ing term s:

Vb[$u + /s c ^ - K [ '/sc,*,J

And:

/ ! V t U , f

Hence:

Vb/ h z = (> + r f t 'S C / A , ) ^

In a more convenient form:

A >t = + ~ jtc 7 A ,) '4 ,lC /A / \In the s te a d y -s ta te . Equation (4*5) becomes:

^ " Q" c'~ -&

24

Class

shown

(4 .1)

(4 .2)

(4.3)

(4.4)

(4.5)

(4 . 6)

Page 34: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

25

cc

/~/&. { V'/) Circuit L/seo/ to DcCermmt.Jhc e f fe c t o f fpexfutncy on A /z

Page 35: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

26

FIG. ( Y-2) C/3SS /I £Qui\/a/cnt —

Tnput C/rcutt

Page 36: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

27

From Equation (4 .6 ) , i t i s apparent th a t A-^ i s frequency depen­

den t, I t i s in te re s tin g to note th a t the curve of as a function

of frequency would follow the rec ip roca l of the curve of th e base to

c o lle c to r voltage gain as a function of frequency fo r the lower values

of frequency. This can be seen more c le a r ly from Equation (4 .4 ) .

As th e frequency of operation i s fu r th e r increased , the fac to r

which appears in Equation (4 .6 ) , becomes more im portant. Figure

(4.3) i s a p lot of Equation (4 .6) and in d ica tes the v a ria tio n of A ^

with frequency.

(4.3) The E ffec t of A ^ on The Upper Cutoff Frequency of The T ransis to r

c u to ff frequency of the t r a n s is to r i s i l lu s t r a te d by the curve of

Figure (4 .4) • The base to co llec to r voltage gain was computed theore­

t i c a l l y by assuming the cu to ff frequency was con tro lled e n tire ly by

the input c ir c u it parameters and was neglected . These assumptions

a re v a lid fo r rqbher low-gain c i r c u i t s .

The curve of th e r a t io of the c o llec to r voltage to the base voltage

as a function of frequency is also shown in Figure (4 .4 ) . The cu to ff

frequency of the ac tu a l curve is seen to be lower than th a t of the

th e o re tic a l curve,,and i t can be assumed th a t A ^ does lower the upper

cu to ff frequency. Figure (4.4) i s a rep resen ta tive curve fo r one par­

t ic u la r type of t r a n s is to r , the B ell 2N-27. However, s im ila r curves

c (4.7)

The e ffe c t of the vo ltage feedback fa c to r , A , on th e upper

Page 37: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

. . 1 _! L I 14

j:!ra-r-w-, rri ■

.1 .

!- ITF

z . cn «xj nc *.5 ^r I I I !

r M4—,• I '!" ! 1

I ' 1 f * *— ,

‘ ! 1 i ■ ■ 4 j- -L-r"

j .:

j.iLjiir■iii' ir: | .

4 -

",4

:u:'iir 4.11:. j -

to -E» U1 CTl « l 00 to >-•

■ l : I" | , - I I ; I . . I , ! ! ' ! f i ' l l 11' 1 ' !'. |" ■ i] ■ |T

I ! i 1 ■ .—i—^-|-j-- ■

r h t 7!

I !

I 1 I

•i ii ’ 11 * I i

T' - t I i :| j

Ml ; i4 —rr-?—4r y—‘h 'T-! I! 4- I -

:j t :

i - ;"4

Tl

4 !

-44—I I !

J - L h i X : - L . _ .r

j f ' j

TT

Ti4l

-• »+- ♦—«X -

i .

' r 7' \ i 'T

r -t i n

44;" i : .

-

i I i14!. i.

1" r4 -4

L - J . -h -

- f -

1- -i

4~L |-

T

1 .

/■/&■ f f . j ; Me. .

rr

■! -f| <X>,

L _ i . .ij» * | ) ! :: j 4 4 , j 1 - ^ 4 r l 4 - j - W [ -

i

“ J T

i ■ —i~!- ~f'

, u J I

i.. i

Page 38: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

were obtained fo r th e Sylvan!* 2Eh35 and th e Tezas Instrument type

903«, and the r e s u l ts were in accordance w ith re s u l ts presented here®

1 i s seen to reduce the upper cu to ff frequency of the t r a n s is - ■ 12 -

t o r but* as ean.be seen from Figure (4e4)s i t i s a very sm a ll,reduo-

tlo iio Therefore d i t i s generally safe to neglect th i s e ffec t in

design work o

Page 39: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

QJI C l "vj *—• c n -s j c r

w * ,Z%

a » m-i—J __ L l - i . . ;.i i

Page 40: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

3 1

- . ' Shapfcer 5 - ;

MODIFICATION OF THE COBMOH EMTTTER HYBRID A PlRiFETER EQUIFAISl® CIRCUIT

(5®l) I n t roduction

The fo m of th e cofimion em itter hybrid A parameter eqx&ralent c i r ­

c u i t th a t has been used in the previous chapters i s not e n tire ly co rrec t 6

I t can be seen from Figure (1*5) th a t the input c ir c u it was assumed •

to consist of a r e s i s to r s A._> in p a ra l le l w ith a cap ac ito r5 0 . >' ; U , o ; . . ■ 321 :

The a c tu a l c ir c u i t c o n s is ts of these two elements in p a ra l le l plus an

a d d itio n a l re s is ta n c e 5 r ^ $ in se rie s w ith th e base of th e tra n s is to ro

This new res is tan ce is termed the Fbase spreading re s is tan ce^ ”." and

i t s usual value i s about one-fourth th e value of A ^o The c irc u it w i l l

simply be presented in th is chapter* and no d e ta ile d analysis w i l l be

performed9 For a fu r th e r study of th is form of th e equivalent c irc u it*

r e f e r to. “Development of a Grounded Em itter Equivalent C ircu it f o r The

Junction Trans is t o r*11 by Mr® David J» Sakrison* Department of Elec­

t r i c a l Engineerings U niversity of Arizona» The co rrec t form, of the ■

common em itter hybrid A parameter equivalent c ir c u i t i s shorn i n .

F igure (5@l)* - . . : "

, (5o2) The E ffe c t:o f The Base Spreading Resistance on Previota R esults

: • Chapters 3 and 4 d ea lt w ith the frequency v a ria tio n of th e cu rren t

am plification factor* M * and of th e voltage feedback factor* A^gi

Page 41: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

32

So vAA'V'

r„

z

/C

c IN ' « (b ^ ^ z z

Z f z F

FlGr. C-5 ' / ) C orrect Form o f The Common?£ w etter ftybrto/ F Fa ra m e te r Equ/vajent C ircu it

Page 42: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

33

The re s u lts presented in these chapters were obtained through the use

of the common em itter hybrid A parameter equivalent c irc u it w ith the

base-spreading res is tan ce neglected . The e ffe c t of th is omission

on the re s u lts of chapters 3 and 4 w il l be discussed in th is section

from a q u a lita tiv e standpo in t.

In chapter 3 , the curren t am plification fa c to r f t was shown to

be constant w ith frequency. The basis fo r th is conclusion was shown

to l i e in the d e f in itio n of the current L as being only in the impe-

dance designated as A c • Therefore, even with the addi­

tio n of the base-spreading re s is tan c e , i t can be seen th a t , since

is not the curren t in to the base te rm in a ls , f t is independent of

frequency.

Chapter 4 was concerned with the e ffe c ts of frequency on the

voltage feedback fa c to r , In th is case, the base spreading r e s is ­

tance would simply in troduce a constant term in the expression for

A1? ( Equation 4*6 ) , and th e frequency e ffe c ts would not be a lte re d .

Therefore, the conclusion th a t A^> is frequency dependent i s v a lid

fo r the complete common em itte r hybrid A parameter equivalent c i r c u i t .

Page 43: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

3 4

G ha#er 6 .

MSDPiSS W$B3BT0B 4MBIF3EBS;

(6 o3.) In troduction

In th e previous chap ters, the common em itte r , hybrid A parameter

equivalent c i r c u i t was presented, and the frequency v a ria tio n s of i t s

parameters were in v es tig a te d « The remainder of th is paper w il l deal

w ith the design and operation of some bandpass t r a n s is to r am plifiers

in the megacycle rangeo The equivalent c ir c u i t discussed in Ohapber

5 w il l be in v estig a ted in so f a r as i t s usefulness in the design of

tuned am plifiers i s concernedo

The m ajority of the previous re s u lts were obtained w ith junction

tra n s is to rs ., although some surface b a rr ie rs were used^ . ::HtMevers._,in •

th e higher range o f frequencies, th e su rface b a r r ie r t ra n s is to rs were

used almost exclusively® ' ' ;

: t pr TheCwidth of th e base region and the in te re le c tro d e capacitanCes

t f th e surface b a r r ie r t r a n s is to r s are very much sm aller than those

of th e -ju n c tio n tra n s is to rs * For these two reasons, which impose the

upper lim it on the frequency of operation of . t r a n s is to r s ^ , t h e :surface

b a r r ie r t r a n s is to r s were used* ' Vrv '

- B= Bradley, and o th e rs , S h e Surface B a rrie r T ran s is to rs 11 ■ ;‘ Broc*, IE®», ¥ o l0 hlo ppo 1702 - 1720, December, 1953® ■; '

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35

(6 .2) D erivation of The Expression For The Gain of Tuned T ran sis to r Am plifiers

The expression fo r the gain of one sing le-tuned stage w i l l be

developed f i r s t . Then, th is derivation w i l l be extended to include

the input coupling c i r c u i t , and then, fo r f,nn id e n tic a l stages in cas- *

cade. The equivalent c i r c u i t presented in Chapter 5 s h a ll be used

fo r these d e riv a tio n s•

The equivalent c ir c u i t fo r one tuned s ta te assures the form

shown in Figure (6 .1 ) . The gain of one stage s h a ll be considered

as being from to B^ ' . This d e fin itio n of stage gain provides

a basis fo r the development of design equations fo r any number of cas­

caded s tag es , and is ra th e r s im ila r to the procedure used w ith vacuum

tu b es•

Consider th e equivalent c ir c u it shown in Figure (6 .1 ) . The nodal

equations fo r the output c ir c u it are :

(6.1)

(6 .2)

Or:

(6 .3 )

Page 45: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

W V ^ vez b; ■I

A /W

'IN ^c. ■"c_ _ _

/ - / & . (6~. J ) £:Qu!va/en£ Circuit for 9 Tuned Thi/isistbr

/ ^ m f / z / z e r ( O n e 5 1 a & e ) .

V)O

6G3

Page 46: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

So that;

e3 * r „ e < ,(s c ,„ + - j L )

37

(6 .4 )

S u b stitu te equation (6 .4 ) in to equation (6 .1 ) .

-Ph=*'ei[sc'"+£; ]b > + ih

Or;

- P h -- e i [ r " * s i ) ~ - k ]

Now, from, the input c ir c u i t ;

Substitu te equation (6 .7 ) in to equation (6 .6 ) .

'^Ir “ ^ 'rO&'+k +&) ~ i ]Tiie gain for one stage was defined as;

* > - f f -Therefore;

- f— r .

a &•* - A + & ) & * yt l

(6 .5 )

(6.6)

(6 .7 )

(6 .8)

(6 .9 )

(6 .10)

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38

Let

J- + J- = —/Zr /Tr /?, (6.11)

And

^ + (6.12)

Therefore, equation (6.10) becomes

yf a i7 i ( s c w *-fc)(sc0 + j£ + £ ) - £ % - ] (6.13)

Rearranging term s, equation (6.13) can be expressed as

-VAf)) = (6.14)[r„r,t CoCM( s + - f c -N ) p Gl J

The term ^ s calcu lated and found to be around 3* This

term , upon expansion of th e denominator, w i l l be part of th e co e ffi­

c ie n t of the "s" term in the cubic equation . The other components

of th is c o e ffic ien t were determined to be about 115. Therefore, the

*''*'/Y\% term m y be neg lected .

The expression fo r the gain becomes

/iw . c ™ £ . 7t e ) ( j % * 5 < 6 J 5 )

Consider th e coupling c ir c u it in the input of the am p lifie r.

The nodal equations are

I ® = e / * s r ) + ( 6 ,1 6 )

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39

r„Hence

epL = e2 (5C/W ^ ^ )* II

And

£ ie,r', ( s c '« + - k ; + ~ k i )

Also

^ Cs^ +-fc )(sc°+«;+£)-% ]

For the input s ig n a l

(6.17)

(6.18)

(6.19)

(6.20)

Ts = -|i- (6.21)Z<J

Therefore

a . /

e ‘ " ' A ) - f - <6-22)

The term in th is expression can be neglected as the ra tio

of th is term to the other terms in the c o e ff ic ie n t of "s’* i s about

3 to 115• Therefore, the expression for the gain becomes

r 7 L - ) « ■ » >

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40

To determine the o v era ll voltage gain o f a cascade o f "n" id en ti­

c a l tuned sta g es , i t i s necessary to consider only the output or c o lle c ­

to r c ir c u it of the la s t s ta g e . The output voltage w i l l appear at the

c o lle c to r terminals of the la s t stage, and the ra tio o f th is voltage

to the input s ig n a l vo ltage w il l be^the overa ll voltage gain of the

cascade•

From the i n i t i a l d e f in it io n i t i s c lea r that the vo ltage gain of

the la s t stage w i l l be

- / j

Therefore, the overa ll voltage gain of "n" id e n tic a l tuned stages

in cascade is

A( i ) _ ___________________________ n H ______________

A j c o (s1* n3 c7

The sign ifican ce o f th is resu lt s h a ll be discussed la te r in th is

chapter,

(6 .3) Center Frequency o f Tuned Transistor Amplifiers

One of the most important design considerations for bandpass

am plifiers i s the center or resonant frequency of the am p lifier .

The expression for the center frequency o f one stage of a tuned tran­

s is to r am plifier sh a ll be derived.

The c ir c u it diagram i s shown in Figure (6 .2 ) The c ir c u it can

Page 50: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

a

a lso be expressed in the form of Figure ( 6 .3 ) . From Figures (6 .2 )

and (6.3) , i t i s immediately obvious that

Y, = &> +j w < :/ J Z J T

Y2 = G , y- J w C

x --

(6 .26)

(6.27)

(6 .28)

The t o ta l admittance i s given by

y - Y +> Y*~ V 2 + y 3 (6 .29)

Su b stitu te for Y, , ^ , and ^

(MO)

M ultiply through by the denominator

Yr z C) CS 00 C? f (93 - t J U J Cz (?jJ u > C z + & t + G 3 (6e31)

Let 6-2 •fS'j - Gry . Equation (6.31) becomes

Yr r (<** + )*>€, + 7 ZL. + G * ' ) + GrzGs -tJcoCz G j (6 .32)J tti Cf, + Gry

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42

D----- -------vWV— ------c^3

)----------

: 4 | C,-ir ch - 4%:

-----------c

F / (S', f"S'- 2 .) Circuit (/sec/ to determineThe. Center Ffervency of Tune/ Tf-Jns/st’or /fmy’/tf/ers

F/6. ( 6'3.) f ) / terna/e Form 0 / fysure. Csi'),

Page 52: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

43

R ationalize equation (6.32)

V - f c , t j t ^ C / ) f c y ttoCz )+ {Crzba+ju*CzGj^fcy - j to C i 3* S + * f c ? (6-33)

Nov/, a t resonance, the imaginary part of the previous expression

i s equal to zero . Therefore, the expression is

(jtuC , + j j ^ ) f 6 y f ( u C2 ) +Ju> c2 GyCr? -J & c2 <rz Gj = O ( 6 .34)

Or, in more convenient form

{jLCtfxl+cSl c,c\ -6y +cJl C2GjGry Gj - O .(6.35)

Factor equation (6.35)

j l c fGrf -Cz -ICzG-i r= o (6 .

Divide by L C t C z

36)

V 2 GJ Co

Therefores

c o & = - 6 ^ - A ' - y c (6.38)

Page 53: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

Uh

6 ^ i- V 6 ^ — 'V C

Where:

b = ^"3 G-^ _ G-z G-3C l L C , C , C x , ~ C , C Z (6*39)

zr \ _ Gr^yC - - z (6.40)

Hence, the resonant frequency of the c irc u it is

(6 . 41)

The sign ificance of th is expression sh a ll a lso be discussed in

the next paragraph.

(6.4) Proposed Method of Design For Tuned T ran sis to r Am plifiers

The expressions developed fo r the gain and cen ter frequency of

bandpass t r a n s is to r am plifiers are very cumbersome, and th e i r complexity

presents many problems to the c ir c u i t designer. Approximations were

attem pted, but they were found to be in v a lid . For example, the design

procedure could be g re a tly sim plified i f the re a l pole in the complex

s plane could be neglected (the pole-zero diagram fo r equation 6.15

i s shown in Figure 6 .4 )• U nfortunately, the loca tion of the re a l pole,

which i s determined by the physical s tru c tu re of the t r a n s is to r , i s

such th a t i t can not be neglected .

At the present tim e, the most p ra c tic a l so lu tion of th is problem

seems to be the use of an e ffec tive equivalent c i r c u i t . By using

th is method, the pole-zero diagram assumes the form shown in Figure (6 .5 ) .

Page 54: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

The r e a l pole i s elim inated by assuming a l l the impedances of the

equivalent c irc u it are in p a ra lle l . I t should be emphasized th a t the

base-spreading re s is ta n c e , r ^ , is not being neglected. This w ill

become more c le a r from the method used to determine the e ffe c tiv e

parameters, which w ill be described below.

The pole-zero diagram of the e ffe c tiv e equivalent c ir c u it i s

p ra c tic a lly of the same form as th a t obtained in vacuum tube c irc u its •

The cen ter frequency and the bandwidth are immediately obvious, and

the design i s , th e re fo re , g rea tly s im p lified . The e ffe c tiv e equivalent

c ir c u it i s assumed to be of the form shown in Figure (6 .6 ) . The v a l­

ues of the e ffec tiv e parameters were determined in the following

manner.

The c irc u it diagram of the c ir c u it used to determine the e ffec­

t iv e values of the parameters in the input c ir c u i t i s shown in Figure

(6.7)# The load res is tan ce in the c o llec to r c ir c u i t i s se t equal to

zero, and the output c i r c u i t is therefo re broadbanded - the base to

c o llec to r voltage gain being equal to zero. A c o il , whose inductance

and res istance is accura tely known, is placed in shunt with the input

c ir c u it of the t r a n s is to r . By changing the sig n a l frequency, a maxi­

mum value of e0 i s found. This maximum occurs a t the resonant f r e - 2 -quency of the input c ir c u it of the t r a n s is to r . The bandwidth of the

input c ir c u it i s then found by varying the frequency on e ith e r side

of the resonant frequency.

The input capacitance, C ^ , is then given by

Page 55: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

F/G. C6-Y) Location of Fo/es dnf j?*roes —

A ctu al C/routC

Page 56: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

47

j w

F /Gr. {6 .S ) LocaCtor) e)/ Fo/es Zeroes£ - f f e c t /u & £ ^ u o / a / e n £ C / r c o > /£

Page 57: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

48

/~/0. CG-&) E ffecttre JrQiftvdtt-nt CircuitGrrovno/ea E m itter Emf/z/zer.

Page 58: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

Cc

CE

FIG". ( 6 .7 ) C ircv/t C/ssJ to Determ//je F-ffccJt/us^l/a/ves o t Fardm et'ers.

5

Page 59: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

50

The input re s is ta n c e , , is e a s ily calcu lated from:

% = Z - > r 3 C T (6.43)

Where

(6.44)

(6.45)

R being the p a ra l le l res is tan ce a rof the c o il a t th is frequency.

A curve of the input c ir c u it response i s shown in Figure (6 .8 ) .

The value of the input capacitance i s a function of the base to c o lle c ­

to r gain . This is analagous to the M ille r e ffe c t observed in vacuum

capactiance as a function of voltage gain i s shown in Figure (6 .9 )•

A ll the inform ation required to design a tuned t r a n s is to r ampli­

f i e r can be determined in the preceeding manner. This method was

used and an am plifie r constructed in th e labo ra to ry . The character­

i s t i c s of th is am plifie r w i l l be discussed in the next sec tio n .

3 . A. N. Perkins, "A Common Em itter Equivalent C ircu it For T ransisto r Design," (T hesis), U niversity of Arizona, 1955•

tu b es , and the equations are of the same form?. The curve of the input

Page 60: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

vl 01 si a (£/1

. : : . I

■ • • r I■ t :

f2/rJrtwencY - tncps _

FIG C6-8) FKavzncy Response 0/ The Input Circuit to r — Pht/co Surtece ~S9rr/€r - -2.p~/2.9

10

Page 61: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical
Page 62: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

(6e5) N eu tra liza tion of Tuned T ransis to r Amplifiers

53

The problem of n e u tra liz a tio n a rise s when using a one stage

am plifier w ith both input and output tuned or when cascading tuned

am plifiers • This can be seen from the c i r c u i t diagram shown in Figure

The base to c o llec to r feedback cap ac ito r, C^c , provides positive

feedback when the input conductance is negative (the input conductance

becomes negative when the impedance in the c o llec to r c ir c u it is induc­

tive* ) I f the positive feedback is of s u f f ic ie n tly large amplitude,

the am plifie r w ill o sc illa te *

The method of n e u tra liz in g th is type of tuned t r a n s is to r ampli­

f i e r i s analogous to the H azeltine system used in grounded cathode

vacuum tube am p lifie rs . The c ir c u it diagram of a ty p ic a l neu tra lized

grounded em itte r am plifier i s shown in Figure (6*11)* The equivalent

c ir c u it of th is am plifier i s shown in Figure (6*12).

The c ir c u i t w il l be neu tra lized when E^e is equal to zero, or:

(6 .10) .

E b t ~ E cat = £ c 6c -f- E t z = O (6 . 46)

Therefore, fo r proper n eu tra liz a tio n

(6.47)

And

(6.48)

Page 63: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

54

F/G. { S./o) Ofte StaGe frans/stor rfmj>////erWith 7u/ie</ fr7fe/t dnJ t c/t/ouf Circuits.

Page 64: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

/mnm

55

i—ii

Z7G-. C6. / I ) A /eotra//*ec/ G-rouYiJ&J tr/v ttter7une<J rf/n/f/t/zer.

Page 65: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

56

C-SC

o —E

E/G*. f 6 - / 2 ) E p u /ra /en t C i r c u i t 0/ a

A /e u tr a /z z c * / G r tr u z jc /^ c /

E m i t t e r f) m ^ /i- /z c r :

Page 66: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

I f Ig is much larger than the currents through and

w ill be the same. Tliis i s assumed to be tru e fo r high Q c i r c u i t s .

Then, fo r s tead y -s ta te operation:

Using the above r e s u l t s , a grounded em itte r am plifier was con­

s tru c ted w ith both the input and the output c irc u its tuned to the same

frequency. Without n e u tra liz a tio n , the c i r c u i t immediately burst

in to sustained o sc illa t io n upon the app lica tion of bias p o te n tia ls .

The inductances in both the input and the output c irc u its were varied ,

but with no e f f e c t .

The c i r c u i t was then a lte re d by f i r s t center-tapping the inductor

(6.49)

And

(6 .50)

Also, from equation (6 .49):

(6.51)

S u b s titu te equation (6.51) in to equation (6 . 50)•

- T , 0 'u> /.3 ) j u > C v _

%J CaJ (6.52)

Therefore:

(6.53)*-3

Page 67: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

■ ■ ' . : V' V V;- - 58

. g jja th e c o lle c to r e ir c u i t and connecting th e n e u tra liz a tio n capacitor^

- G > from one side of th is c o i l to the base of the transisto r® This• ' ■■■. ■ \ V . . : '' ■■ ' ■ - -

i s the c ir c u i t th a t i s shown in Figure (6*12) * Bias p o ten tia ls were

applied and the c ir c u it no longer o sc illa te d bub operated as an ampli­

f ie r*

(606) C h a rac te ris tic s of I n Experimental Tuned T ran sis to r Am plifier .

The design procedure fo r tuned t r a n s is to r am plifiers was- outlined

in section (6*4)« , Using th is method, a one stage tuned am plifie r

was constructed and i t s c h a ra c te r is t ic s . s tu d ied « The am p lifie r was

designed to have a cen ter frequency of 4 <>3 megacycles s a bandwidth of '

. 200 k ilocycles j, and a gain of a t le a s t 16 0 The c irc u it diagram is

shown in Figure (6S13) e

The th e o re tic a l and. experimental response curves are shown in

Figure (6*14)* -The experimental am plifier had; a cen ter frequency of

4o l megacycles 5 a bandwidth of 240 k ilocycles and a gain of 19*4*

Although the re s u lts are not exactly equal to the calcu lated values s

.they are ra th e r encouraging® ,. -' • ; - ' ‘ , - 6 '

T h eo re tica lly 5 the gain-bandwidth product was 3*2 x 10 cycles

- per seconds while the gam-bandwidth product determined experim entally■' ■■■■ ■' ' ' 6 '' ' '■■■ ■ '' ' ‘ ' was 4*66 x 10 cycles per seconds As in vacuum tube c i r c u i t s 5 the

gain-bandwidth product may be thought of as a fig u re of m erit fo r th e

c irc u it in question* Because the figu re of m erit of the a c tu a l c i r ­

c u it was g rea te r . than the th e o re tic a lly ca lcu la ted "value5 the design

appears to be a ra th e r pessim istic one® Perhaps one of the more

Page 68: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

' "■ : ‘ " . ■ . ...■ ; ; 59outstanding reasons fo r th is could be the use of average values fo r the

parameters of the e ffe c tiv e equivalent c i r c u i t <,

The e rro r in th e cen te r frequency, is le s s than 5 This could

be caused by the values of the parameters of the e ffe c tiv e equivalent

c i r c u i t , -which are not accurate to more than 5 % because of in s tru ­

ment a t ion o A lso5 the inductances used were hand-wound on ceramic c o il

forms and i t i s possible th a t the values fo r the inductance and effec­

t iv e re s is tan ce of the c o ils could be s l ig h t ly in erroro

Although th e re s u l ts seem to v a lid a te th e proposed method of

designing tuned t r a n s is to r am plifiers the author fee ls th a t the sub­

je c t bears fu r th e r investigations,

Page 69: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

60

bb

/~/G- ( 6 - / 3 ) Grovnc/ec/ JFrntffier Tc/naatTPtins/stor /!ntf////er.

VA

AA

SUU

-

Page 70: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

h"L; ■ i -fricQ venky frte*9< ,yt/es i \ ‘.l: '|T" — t ' “ f ' ‘ f - - ™ ■ •■’ j ■ ■■ —— " 1 ■ -' > *"**■ ' ~ ■■ *— ■ I I —' ■ - - ' * *— —-j" — —'—■' ■ ——« - ■»»■«■■ - — i- - "j—■ ■» -'—■ - --- - " ■ T yl I M ■ n— ■ « —> ■ ■

! Z'6 ~ /V ) f r e Q v e n c y ^es^t>*rs<e <jf <3 G ro u n J eJ E m tC terI ■ - / TT-____. : ZI__ __ Z. ZV__ : i I

Page 71: Frequency variations of transistor parameters...FREQUENCY VARIATIONS OF THAIS IS TOR PARAI-ETERS by Victor Re Latorre A Thesis submitted to the faculty of the Department of Electrical

BIBLlOG-EAHil

ARTICLES

Wo Eo Bradley5 and o thers, "The Surface B arrie r T ra n s is to r , 11 Eroco;, HEoS Volo Al° PP° 1702-1720, December, 1953 =

A ® No Perlsins, !JA Common Em itter Equivalent C ircu it For T ransis to r Design A" (Thesis) s U niversity of Arizona, Tucsdn, 1955«

Do Jo Sakrison^\"Beyelopmeht o f ;A Grounded E m itter Equivalent C ircu it For The Junction T ra n s is to r ,11 (T hesis) , U niversity o f Arizona, 1955<> ' :


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