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Latest results in developing n-in-p pixel and microstrip sensors for very high radiation environments. - PowerPoint PPT Presentation
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Latest results in developing n- in-p pixel and microstrip sensors for very high radiation environments Y. Unno, S. Mitsui, Y. Ikegami, Y. Takubo, S. Terada (KEK), K. Hara, Y. Takahashi (Univ. Tsukuba), O. Jinnouchi, R. Nagai, T. Kishida (Tokyo Inst. Tech.), K. Yorita (Waseda Univ.), K. Hanagaki (Osaka Univ.), R. Takashima (Kyoto Univ. Edu.), S. Kamada, A. Ishida, K. Yamamura (Hamamatsu K.K.) 1 Y. Unno, Trento11, 2011/3/2
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KEK/Japan Status

Latest results in developing n-in-p pixel and microstrip sensors for very high radiation environmentsY. Unno, S. Mitsui, Y. Ikegami, Y. Takubo, S. Terada (KEK), K. Hara, Y. Takahashi (Univ. Tsukuba), O. Jinnouchi, R. Nagai, T. Kishida (Tokyo Inst. Tech.), K. Yorita (Waseda Univ.), K. Hanagaki (Osaka Univ.), R. Takashima (Kyoto Univ. Edu.), S. Kamada, A. Ishida, K. Yamamura (Hamamatsu K.K.)1Y. Unno, Trento11, 2011/3/2

LHCHL-LHC (5x1035)From LHC to HL/S-LHCLHC (-2020)~300 fb-1 by 2020HL-LHC (2022-2034): 250 fb-1 per year3000 fb-1 in 12 yrsConstruction of New Trackermay start in ~2016

Y. Unno, Trento11, 2011/3/22

IBL (ATLAS)New PIXEL?(ATLAS)New TRACKER(ATLAS)Particle fluences in ATLASIBL (LHC)Insertable B-layer pixelr = 3.2 cmFlunece ~2x1015 at Int.L~300 fb-1 PIXELs (HL-LHC)New IBL ~2x1016 r = 10 cm, e.g.Fluence ~4x1015 STRIPs (HL-LHC)r = 30 cm, e.g.Fluence ~1x1015 Y. Unno, Trento11, 2011/3/23

OutlineN-in-p silicon microstrip sensors6-in. wafer process in HPKLarge area strip sensor and miniature sensorsProton, neutron irradiationsg irradiation (preliminary)New punch-thru-protection (PTP) structuresN-in-p silicon pixel sensors6-in. wafer process in HPKATLAS FE-I3 and FE-I4 pixel sensorsThinned sensorsFE-I3 n-in-p single-chip module (SCM) for testbeamCharge collectionBump-bonding at HPKInsulating the edgeCYRIC irradiationDiodes for study of lateral depletion/edge breakdownMiniature strip sensors with new PTP structures4Y. Unno, Trento11, 2011/3/2N-in-p Strip SensorsSuccessful fabrication of large-area and miniatures (for irradiation) sensorsreported in Hiroshima09 conf.Y. Unno, Trento11, 2011/3/25

[1] J. Bohm et al., HSTD7, Nucl. Instr. Meth. A636[2] K. Hara et al., HSTD7, Nucl. Instr. Meth. A636UniGe/KEK modules

Large sensors [1]Irradiated miniatures [2]g Irradiation (Preliminary)Dose rate200 Gy/h1000 Gy/h laterSamplesZ3, i.e., the same as the main sensorWafer materialFZ1: default waferFZ2: higher crystal defectsResultsThose with higher crystal defect concentration revealed much lower onset voltageSharp decrease of onset voltage of microdischarge (MD), then gradual recoveryThose with low onset voltage of MD stayed as the same onset voltageY. Unno, Trento11, 2011/3/26K. Takahashi, K. Hara (U.Tsukuba)

FZ2FZ1New PTP StructuresMotivationTo decrease the turn-on voltage of punch-thru-protection (PTP)To sharpen the turn-onTo lower the saturation resistanceExtended electrode over p-stop

Y. Unno, Trento11, 2011/3/27

[1] Y. Unno et al., HSTD7, Nucl. Insr. Meth. A633Ref. [1]TCAD simulationsExtended electrode+ more oxide charge

BZ4D-5non irrad1e141e155e12, 1e14Resistance [M]

BZ4D-5BZ4B-2BZ4C-2BZ4D-3BZ4D-1BZ4B-3, BZ4D-4New PTP StructuresSamplesBZ4B-2: miniature originally in the 6-in. fab.BZ4D-3, BZ4D-3, -4, -5 etc.: extended electrode over p-stopIrradiation dataSee the irradiated data to be presented by S. MitsuiMore effect than simple increase of oxide chargeY. Unno, Trento11, 2011/3/28

Resistance []100Non-irrad.(With 20 k) (w/o 20 k)N-in-p Pixel Sensors6-in. wafer process in HPKATLAS FE-I3 and FE-I4 pixel sensorsBias: Punth-thru (PT, corner(LA)), PolySiIsolation: p-stop (common, individual), p-spray

Y. Unno, Trento11, 2011/3/29

PriorityWafer No.Chip No.type11734PTLA-common21834PTLA-common31737PolySi-common41837PolySi-common51735PTLA-individual61738PolySi-individual73336PTLA-Pspray83339PolySi-Pspray91835PTLA-individual101838Poly-Si individual111935PTLA-individual121937PolySi-common131938Poly-Si individualBias: PTBias: PolySiPstop(Pspray)

PTLAPolySiCommonIndividualP-spray

N-in-p 150 m Thin Pixel SensorsThinning is made asFinishing 320 m wafer process firstThinning the wafersCompleting the backside Good I-V performance, although before dicingMaking of FE-I4 pixel modules with the thin pixelsNumber of wafers are at IZM for bump-bonding at presentY. Unno, Trento11, 2011/3/210

1 AFE-I4 type2x1 FE-I4 typen-in-p 150 m thinnedSamples from Previous WafersIrradiation and reported in this workshopDiodes (4 x 4 mm2)Miniature strips (1 x 1 cm2)PTP study

FE-I3 pixel sensorsPolySi bias resistor + p -stopBump-bonding at HPK to make FE-I3 single-chip module2 were in the testbeam in Oct. 2010, non-irrad.Y. Unno, Trento11, 2011/3/211

Slim Edge Study Lateral DepletionWafer thickness320 mBoth N- and P-sub wafersDependence of square root(V_bias) on the distance to edgeLinear, reflectingthe lateral depletion along the surfaceDistance to hold 1000 V~400-450 m

After irradiation, see the presentation by S. MitsuiEdge width to reach ~1000V

Y. Unno, Trento11, 2011/3/212

Above 1000 VNon-irrad.After irrad.Surface becomes P (in N-sub) even with as low as 5x1012 neq/cm2. (Unno-Mitsui effect (?))


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