+ All Categories
Home > Documents > Fundamentals of Microelectronics

Fundamentals of Microelectronics

Date post: 14-Jan-2016
Category:
Upload: tave
View: 64 times
Download: 5 times
Share this document with a friend
Description:
Fundamentals of Microelectronics. CH1 Why Microelectronics? CH2 Basic Physics of Semiconductors CH3 Diode Circuits CH4 Physics of Bipolar Transistors CH5 Bipolar Amplifiers CH6 Physics of MOS Transistors CH7 CMOS Amplifiers CH8 Operational Amplifier As A Black Box. - PowerPoint PPT Presentation
Popular Tags:
105
1 Fundamentals of Microelectronics CH1 Why Microelectronics? CH2 Basic Physics of Semiconductors CH3 Diode Circuits CH4 Physics of Bipolar Transistors CH5 Bipolar Amplifiers CH6 Physics of MOS Transistors CH7 CMOS Amplifiers CH8 Operational Amplifier As A Black Box
Transcript
Page 1: Fundamentals of Microelectronics

1

Fundamentals of Microelectronics

CH1 Why Microelectronics? CH2 Basic Physics of Semiconductors CH3 Diode Circuits CH4 Physics of Bipolar Transistors CH5 Bipolar Amplifiers CH6 Physics of MOS Transistors CH7 CMOS Amplifiers CH8 Operational Amplifier As A Black Box

Page 2: Fundamentals of Microelectronics

2

Chapter 5 Bipolar Amplifiers

5.1 General Considerations

5.2 Operating Point Analysis and Design

5.3 Bipolar Amplifier Topologies

5.4 Summary and Additional Examples

Page 3: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 3

Bipolar Amplifiers

Page 4: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 4

Voltage Amplifier

In an ideal voltage amplifier, the input impedance is infinite and the output impedance zero.

But in reality, input or output impedances depart from their ideal values.

Page 5: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 5

Input/Output Impedances

The figure above shows the techniques of measuring input and output impedances.

x

xx i

VR

Page 6: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 6

Input Impedance Example I

When calculating input/output impedance, small-signal analysis is assumed.

riv

x

x

Page 7: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 7

Impedance at a Node

When calculating I/O impedances at a port, we usually ground one terminal while applying the test source to the other terminal of interest.

Page 8: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 8

Impedance at Collector

With Early effect, the impedance seen at the collector is equal to the intrinsic output impedance of the transistor (if emitter is grounded).

oout rR

Page 9: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 9

Impedance at Emitter

The impedance seen at the emitter of a transistor is approximately equal to one over its transconductance (if the base is grounded).

)(

1

11

A

m

out

mx

x

V

gR

rgi

v

Page 10: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 10

Three Master Rules of Transistor Impedances

Rule # 1: looking into the base, the impedance is r if emitter is (ac) grounded.

Rule # 2: looking into the collector, the impedance is ro if emitter is (ac) grounded.

Rule # 3: looking into the emitter, the impedance is 1/gm if base is (ac) grounded and Early effect is neglected.

Page 11: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 11

Biasing of BJT

Transistors and circuits must be biased because (1) transistors must operate in the active region, (2) their small-signal parameters depend on the bias conditions.

Page 12: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 12

DC Analysis vs. Small-Signal Analysis

First, DC analysis is performed to determine operating point and obtain small-signal parameters.

Second, sources are set to zero and small-signal model is used.

Page 13: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 13

Notation Simplification

Hereafter, the battery that supplies power to the circuit is replaced by a horizontal bar labeled Vcc, and input signal is simplified as one node called Vin.

Page 14: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 14

Example of Bad Biasing

The microphone is connected to the amplifier in an attempt to amplify the small output signal of the microphone.

Unfortunately, there’s no DC bias current running thru the transistor to set the transconductance.

Page 15: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 15

Another Example of Bad Biasing

The base of the amplifier is connected to Vcc, trying to establish a DC bias.

Unfortunately, the output signal produced by the microphone is shorted to the power supply.

Page 16: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 16

Biasing with Base Resistor

Assuming a constant value for VBE, one can solve for both IB and IC and determine the terminal voltages of the transistor.

However, bias point is sensitive to variations.

B

BECCC

B

BECCB R

VVI

R

VVI

,

Page 17: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 17

Improved Biasing: Resistive Divider

Using resistor divider to set VBE, it is possible to produce an IC that is relatively independent of if base current is small.

)exp(21

2

21

2

T

CCSC

CCX

VV

RRR

II

VRR

RV

Page 18: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 18

Accounting for Base Current

With proper ratio of R1 and R2, IC can be insensitive to ; however, its exponential dependence on resistor deviations makes it less useful.

T

ThevBThevSC V

RIVII exp

Page 19: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 19

Emitter Degeneration Biasing

The presence of RE helps to absorb the error in VX so VBE stays relatively constant.

This bias technique is less sensitive to (I1 >> IB) and VBE

variations.

Page 20: Fundamentals of Microelectronics

20

Design Procedure

Choose an IC to provide the necessary small signal parameters, gm, r, etc.

Considering the variations of R1, R2, and VBE, choose a value for VRE.

With VRE chosen, and VBE calculated, Vx can be determined.

Select R1 and R2 to provide Vx.

Page 21: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 21

Self-Biasing Technique

This bias technique utilizes the collector voltage to provide the necessary Vx and IB.

One important characteristic of this technique is that collector has a higher potential than the base, thus guaranteeing active operation of the transistor.

Page 22: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 22

Self-Biasing Design Guidelines

(1) provides insensitivity to . (2) provides insensitivity to variation in VBE .

BECCBE

BC

VVV

RR

)2(

)1(

Page 23: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 23

Summary of Biasing Techniques

Page 24: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 24

PNP Biasing Techniques

Same principles that apply to NPN biasing also apply to PNP biasing with only polarity modifications.

Page 25: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 25

Possible Bipolar Amplifier Topologies

Three possible ways to apply an input to an amplifier and three possible ways to sense its output.

However, in reality only three of six input/output combinations are useful.

Page 26: Fundamentals of Microelectronics

26

Study of Common-Emitter Topology

Analysis of CE Core

Inclusion of Early Effect Emitter Degeneration

Inclusion of Early Effect CE Stage with Biasing

Page 27: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 27

Common-Emitter Topology

Page 28: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 28

Small Signal of CE Amplifier

Cmv

inmm

C

out

in

outv

RgA

vgvgRv

vv

A

Page 29: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 29

Limitation on CE Voltage Gain

Since gm can be written as IC/VT, the CE voltage gain can be written as the ratio of VRC and VT.

VRC is the potential difference between VCC and VCE, and VCE

cannot go below VBE in order for the transistor to be in active region.

T

CCv V

RIA

T

RCv V

VA

T

BECCv V

VVA

Page 30: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 30

Tradeoff between Voltage Gain and Headroom

Page 31: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 31

I/O Impedances of CE Stage

When measuring output impedance, the input port has to be grounded so that Vin = 0.

riv

RX

Xin C

X

Xout R

i

vR

Page 32: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 32

CE Stage Trade-offs

Page 33: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 33

Inclusion of Early Effect

Early effect will lower the gain of the CE amplifier, as it appears in parallel with RC.

OCout

OCmv

rRR

rRgA

||

)||(

Page 34: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 34

Intrinsic Gain

As RC goes to infinity, the voltage gain reaches the product of gm and rO, which represents the maximum voltage gain the amplifier can have.

The intrinsic gain is independent of the bias current.

T

Av

Omv

VV

A

rgA

Page 35: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 35

Current Gain

Another parameter of the amplifier is the current gain, which is defined as the ratio of current delivered to the load to the current flowing into the input.

For a CE stage, it is equal to .

CEI

in

outI

A

i

iA

Page 36: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 36

Emitter Degeneration

By inserting a resistor in series with the emitter, we “degenerate” the CE stage.

This topology will decrease the gain of the amplifier but improve other aspects, such as linearity, and input impedance.

Page 37: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 37

Small-Signal Model

Interestingly, this gain is equal to the total load resistance to ground divided by 1/gm plus the total resistance placed in series with the emitter.

E

m

Cv

Em

Cmv

Rg

RA

Rg

RgA

1

1

Page 38: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 38

Emitter Degeneration Example I

The input impedance of Q2 can be combined in parallel with RE to yield an equivalent impedance that degenerates Q1.

2

1

||1

rRg

RA

E

m

Cv

Page 39: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 39

Emitter Degeneration Example II

In this example, the input impedance of Q2 can be combined in parallel with RC to yield an equivalent collector impedance to ground.

E

m

Cv

Rg

rRA

1

2

1||

Page 40: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 40

Input Impedance of Degenerated CE Stage

With emitter degeneration, the input impedance is increased from r to r + (+1)RE; a desirable effect.

E

X

Xin

XEXX

A

Rri

vR

iRirv

V

)1(

)1(

Page 41: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 41

Output Impedance of Degenerated CE Stage

Emitter degeneration does not alter the output impedance in this case. (More on this later.)

C

X

Xout

Emin

A

Ri

vR

vRvgr

vvv

V

00

Page 42: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 42

Capacitor at Emitter

At DC the capacitor is open and the current source biases the amplifier.

For ac signals, the capacitor is short and the amplifier is degenerated by RE.

Page 43: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 43

Example: Design CE Stage with Degeneration as a Black Box

If gmRE is much greater than unity, Gm is more linear.

Em

m

in

outm

Em

inmout

A

Rg

g

v

iG

Rgr

vgi

V

1

)(1 1

Page 44: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 44

Degenerated CE Stage with Base Resistance

1

1

)1(

.

BE

m

Cv

BE

C

in

out

A

out

in

A

in

out

A

RR

g

RA

RRr

R

v

v

v

v

v

v

v

v

V

Page 45: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 45

Input/Output Impedances

Rin1 is more important in practice as RB is often the output impedance of the previous stage.

Cout

EBin

Ein

A

RR

RrRR

RrR

V

)1(

)1(

22

1

Page 46: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 46

Emitter Degeneration Example III

1

2

2

1

||

)1(

11

)||(

RRR

RrR

RR

g

RRA

Cout

in

B

m

Cv

Page 47: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 47

Output Impedance of Degenerated Stage with VA<

Emitter degeneration boosts the output impedance by a factor of 1+gm(RE||r).

This improves the gain of the amplifier and makes the circuit a better current source.

)||(1

)||)(1(

||)||(1

rRgrR

rRrgrR

rRrrRgR

EmOout

EOmOout

EOEmout

Page 48: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 48

Two Special Cases

OEmout

E

OmOout

E

rRgR

rR

rrgrR

rR

)1(

)1(

)2

)1

Page 49: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 49

Analysis by Inspection

This seemingly complicated circuit can be greatly simplified by first recognizing that the capacitor creates an AC short to ground, and gradually transforming the circuit to a known topology.

12 ||)||(1 RrrRgR Omout Omout rrRgR )||(1 21 11 || outout RRR

Page 50: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 50

Example: Degeneration by Another Transistor

Called a “cascode”, the circuit offers many advantages that are described later in the book.

1121 )||(1 OOmout rrrgR

Page 51: Fundamentals of Microelectronics

51

Study of Common-Emitter Topology

Analysis of CE Core

Inclusion of Early Effect Emitter Degeneration

Inclusion of Early Effect CE Stage with Biasing

Page 52: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 52

Bad Input Connection

Since the microphone has a very low resistance that connects from the base of Q1 to ground, it attenuates the base voltage and renders Q1 without a bias current.

Page 53: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 53

Use of Coupling Capacitor

Capacitor isolates the bias network from the microphone at DC but shorts the microphone to the amplifier at higher frequencies.

Page 54: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 54

DC and AC Analysis

Coupling capacitor is open for DC calculations and shorted for AC calculations.

OCout

Bin

OCmv

rRR

RrR

rRgA

||

||

)||(

Page 55: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 55

Bad Output Connection

Since the speaker has an inductor, connecting it directly to the amplifier would short the collector at DC and therefore push the transistor into deep saturation.

Page 56: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 56

Still No Gain!!!

In this example, the AC coupling indeed allows correct biasing. However, due to the speaker’s small input impedance, the overall gain drops considerably.

Page 57: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 57

CE Stage with Biasing

OCout

in

OCmv

rRR

RRrR

rRgA

||

||||

)||(

21

Page 58: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 58

CE Stage with Robust Biasing

Cout

Ein

E

m

Cv

RR

RRRrR

Rg

RA

21 ||||)1(

1

AV

Page 59: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 59

Removal of Degeneration for Signals at AC

Capacitor shorts out RE at higher frequencies and removes degeneration.

Cout

in

Cmv

RR

RRrR

RgA

21 ||||

Page 60: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 60

Complete CE Stage

1

||||1||

21

RRR

Rg

RRA

sE

m

LCv

Page 61: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 61

Summary of CE Concepts

Page 62: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 62

Common Base (CB) Amplifier

In common base topology, where the base terminal is biased with a fixed voltage, emitter is fed with a signal, and collector is the output.

Page 63: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 63

CB Core

The voltage gain of CB stage is gmRC, which is identical to that of CE stage in magnitude and opposite in phase.

Cmv RgA

Page 64: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 64

Tradeoff between Gain and Headroom

To maintain the transistor out of saturation, the maximum voltage drop across RC cannot exceed VCC-VBE.

T

BECC

C

T

Cv

VVV

RVI

A

.

Page 65: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 65

Simple CB Example

KR

KR

RgA Cmv

7.67

3.22

2.17

2

1

Page 66: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 66

Input Impedance of CB

The input impedance of CB stage is much smaller than that of the CE stage.

m

in gR

1

Page 67: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 67

Practical Application of CB Stage

To avoid “reflections”, need impedance matching. CB stage’s low input impedance can be used to create a

match with 50 .

Page 68: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 68

Output Impedance of CB Stage

The output impedance of CB stage is similar to that of CE stage.

COout RrR ||

Page 69: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 69

CB Stage with Source Resistance

With an inclusion of a source resistor, the input signal is attenuated before it reaches the emitter of the amplifier; therefore, we see a lower voltage gain.

This is similar to CE stage emitter degeneration; only the phase is reversed.

S

m

Cv

Rg

RA

1

Page 70: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 70

Practical Example of CB Stage

An antenna usually has low output impedance; therefore, a correspondingly low input impedance is required for the following stage.

Page 71: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 71

Realistic Output Impedance of CB Stage

The output impedance of CB stage is equal to RC in parallel with the impedance looking down into the collector.

1

1

||

||)||(1

outCout

EOEmout

RRR

rRrrRgR

Page 72: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 72

Output Impedance of CE and CB Stages

The output impedances of CE, CB stages are the same if both circuits are under the same condition. This is because when calculating output impedance, the input port is grounded, which renders the same circuit for both CE and CB stages.

Page 73: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 73

Fallacy of the “Old Wisdom”

The statement “CB output impedance is higher than CE output impedance” is flawed.

Page 74: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 74

CB with Base Resistance

With an addition of base resistance, the voltage gain degrades.

m

BE

C

in

out

gR

R

R

v

v1

1

Page 75: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 75

Comparison of CE and CB Stages with Base Resistance

The voltage gain of CB amplifier with base resistance is exactly the same as that of CE stage with base resistance and emitter degeneration, except for a negative sign.

Page 76: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 76

Input Impedance of CB Stage with Base Resistance

The input impedance of CB with base resistance is equal to 1/gm plus RB divided by (+1). This is in contrast to degenerated CE stage, in which the resistance in series with the emitter is multiplied by (+1) when seen from the base.

11

1

B

m

B

X

X Rg

Rr

iv

Page 77: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 77

Input Impedance Seen at Emitter and Base

Page 78: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 78

Input Impedance Example

To find the RX, we have to first find Req, treat it as the base resistance of Q2 and divide it by (+1).

1

11

11

12 B

mm

X

Rgg

R

Page 79: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 79

Bad Bias Technique for CB Stage

Unfortunately, no emitter current can flow.

Page 80: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 80

Still No Good

In haste, the student connects the emitter to ground, thinking it will provide a DC current path to bias the amplifier. Little did he/she know that the input signal has been shorted to ground as well. The circuit still does not amplify.

Page 81: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 81

Proper Biasing for CB Stage

Cm

SEmin

out

E

m

in

RgRRgv

v

Rg

R

11

1

||1

Page 82: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 82

Reduction of Input Impedance Due to RE

The reduction of input impedance due to RE is bad because it shunts part of the input current to ground instead of to Q1

(and Rc) .

Page 83: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 83

Creation of Vb

Resistive divider lowers the gain. To remedy this problem, a capacitor is inserted from base to

ground to short out the resistor divider at the frequency of interest.

Page 84: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 84

Example of CB Stage with Bias

For the circuit shown above, RE >> 1/gm. R1 and R2 are chosen so that Vb is at the appropriate value

and the current that flows thru the divider is much larger than the base current.

Capacitors are chosen to be small compared to 1/gm at the required frequency.

Page 85: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 85

Emitter Follower (Common Collector Amplifier)

Page 86: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 86

Emitter Follower Core

When the input is increased by V, output is also increased by an amount that is less than V due to the increase in collector current and hence the increase in potential drop across RE.

However the absolute values of input and output differ by a VBE.

Page 87: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 87

Small-Signal Model of Emitter Follower

As shown above, the voltage gain is less than unity and positive.

m

E

E

E

in

out

gR

R

Rrv

v11

11

1

AV

Page 88: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 88

Unity-Gain Emitter Follower

The voltage gain is unity because a constant collector current (= I1) results in a constant VBE, and hence Vout

follows Vin exactly.

1vA

AV

Page 89: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 89

Analysis of Emitter Follower as a Voltage Divider

AV

Page 90: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 90

Emitter Follower with Source Resistance

m

SE

E

in

out

gR

R

Rvv

11

AV

Page 91: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 91

Input Impedance of Emitter Follower

The input impedance of emitter follower is exactly the same as that of CE stage with emitter degeneration. This is not surprising because the input impedance of CE with emitter degeneration does not depend on the collector resistance.

E

X

X Rriv

)1( AV

Page 92: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 92

Emitter Follower as Buffer

Since the emitter follower increases the load resistance to a much higher value, it is suited as a buffer between a CE stage and a heavy load resistance to alleviate the problem of gain degradation.

Page 93: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 93

Output Impedance of Emitter Follower

Emitter follower lowers the source impedance by a factor of +1 improved driving capability.

E

m

sout R

g

RR ||

11

Page 94: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 94

Emitter Follower with Early Effect

Since rO is in parallel with RE, its effect can be easily incorporated into voltage gain and input and output impedance equations.

OE

m

sout

OEin

m

SOE

OEv

rRg

RR

rRrR

gR

rR

rRA

||||1

1

||1

11

||

||

Page 95: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 95

Current Gain

There is a current gain of (+1) from base to emitter. Effectively speaking, the load resistance is multiplied by

(+1) as seen from the base.

Page 96: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 96

Emitter Follower with Biasing

A biasing technique similar to that of CE stage can be used for the emitter follower.

Also, Vb can be close to Vcc because the collector is also at Vcc.

Page 97: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 97

Supply-Independent Biasing

By putting a constant current source at the emitter, the bias current, VBE, and IBRB are fixed regardless of the supply value.

Page 98: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 98

Summary of Amplifier Topologies

The three amplifier topologies studied so far have different properties and are used on different occasions.

CE and CB have voltage gain with magnitude greater than one, while follower’s voltage gain is at most one.

Page 99: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 99

Amplifier Example I

The keys in solving this problem are recognizing the AC ground between R1 and R2, and Thevenin transformation of the input network.

SE

m

S

C

in

out

RRR

Rg

RRRR

vv

1

1

1

2

11

||||

Page 100: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 100

Amplifier Example II

Again, AC ground/short and Thevenin transformation are needed to transform the complex circuit into a simple stage with emitter degeneration.

S

m

S

C

in

out

RRR

Rg

RRR

v

v

1

1

21 11

||

Page 101: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 101

Amplifier Example III

The key for solving this problem is first identifying Req, which is the impedance seen at the emitter of Q2 in parallel with the infinite output impedance of an ideal current source. Second, use the equations for degenerated CE stage with RE replaced by Req.

2

1

1

211

11

1

mm

Cv

in

gR

g

RA

rRrR

Page 102: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 102

Amplifier Example IV

The key for solving this problem is recognizing that CB at frequency of interest shorts out R2 and provide a ground for R1.

R1 appears in parallel with RC and the circuit simplifies to a simple CB stage.

m

S

Cv

gR

RRA

1|| 1

Page 103: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 103

Amplifier Example V

The key for solving this problem is recognizing the equivalent base resistance of Q1 is the parallel connection of RE and the impedance seen at the emitter of Q2.

12

1||

111

1

m

E

m

Bin g

Rg

RR

Page 104: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 104

Amplifier Example VI

The key in solving this problem is recognizing a DC supply is actually an AC ground and using Thevenin transformation to simplify the circuit into an emitter follower.

SS

m

OE

OE

in

out

RRR

RRg

rRR

rRRvv

1

1

12

2

1||1

||||

||||

OE

m

Sout rRR

g

RRR ||||||

11

||2

1

Page 105: Fundamentals of Microelectronics

CH5 Bipolar Amplifiers 105

Amplifier Example VII

Impedances seen at the emitter of Q1 and Q2 can be lumped with RC and RE, respectively, to form the equivalent emitter and collector impedances.

12

1

3

2

3

2

2

11

111

11

11

11

1

mm

B

m

BC

v

m

BCout

m

BEin

ggR

gR

R

A

gR

RR

gR

RrR


Recommended