G1 G2 S2 - Diodes Incorporated

DMC6070LND Document number: DS38051 Rev. 2 - 2

1 of 12 www.diodes.com

September 2015 © Diodes Incorporated

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C60

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D1

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G2S2G1S1

Pin 1

D2 D2D1

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET POWERDI

®

Product Summary

Device V(BR)DSS RDS(ON) max ID max

TA = +25°C

Q1 60V 85mΩ @ VGS = 10V 3.1A

120mΩ @ VGS = 4.5V 2.7A

Q2 -60V 150mΩ @ VGS = -10V -2.4A

250mΩ @ VGS = -4.5V -1.8A

Description

This new generation MOSFET is designed to minimize the on-state

resistance (RDS(ON)), yet maintain superior switching performance,

making it ideal for high efficiency power management applications.

Applications

Power Management Functions

Analog Switch

Features

Low On-Resistance

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

Complementary Pair MOSFET

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Mechanical Data

Case: POWERDI®3333-8

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish – Matte Tin Annealed over Copper Leadframe;

Solderable per MIL-STD-202, Method 208

Weight: 0.072 grams (Approximate)

Ordering Information (Note 4)

Part Number Case Packaging

DMC6070LND-7 POWERDI3333-8 2,000/Tape & Reel

DMC6070LND-13 POWERDI3333-8 3,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Bottom View

C6A = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 15 for 2015) WW = Week Code (01 to 53)

Equivalent Circuit

N-Channel MOSFET P-Channel MOSFET

POWERDI3333-8

C6A

Top View

POWERDI is a registered trademark of Diodes Incorporated.




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Maximum Ratings Q1 N-CHANNEL (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit

Drain-Source Voltage VDSS 60 V

Gate-Source Voltage VGSS ±20 V

Continuous Drain Current (Note 5) VGS = 10V

Steady State

TA = +25°C

TA = +70°C ID

3.1 2.5

A

t<10s TA = +25°C

TA = +70°C ID

3.9 3.1

A

Maximum Body Diode Forward Current (Note 5) IS 2 A

Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) IDM 15 A

Maximum Ratings Q2 P-CHANNEL (@TA = +25°C, unless otherwise specified.)


Drain-Source Voltage VDSS -60 V

Gate-Source Voltage VGSS ±20 V

Continuous Drain Current (Note 5) VGS = -10V

Steady State

TA = +25°C

TA = +70°C ID

-2.4 -1.9

A

t<10s TA = +25°C

TA = +70°C ID

-2.9 -2.3

A

Maximum Body Diode Forward Current (Note 5) IS -2 A

Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) IDM -12 A

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)


Total Power Dissipation (Note 5) PD 1.4 W

Thermal Resistance, Junction to Ambient (Note 5) Steady state

RθJA 91

°C/W t<10s 60

Thermal Resistance, Junction to Case (Note 5) RθJC 32

Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C

Note: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.




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Electrical Characteristics Q1 N-CHANNEL (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage BVDSS 60 V VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current TJ = +25°C IDSS 1 μA VDS = 60V, VGS = 0V

Gate-Source Leakage IGSS ±100 nA VGS = ±16V, VDS = 0V

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage VGS(TH) 1 3 V VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance RDS(ON) 60 85

mΩ VGS = 10V, ID = 1.5A

72 120 VGS = 4.5V, ID = 0.5A

Forward Transfer Admittance |Yfs| 3.7 S VDS = 5V, ID = 1.5A

Diode Forward Voltage VSD 0.7 1.2 V VGS = 0V, IS = 3A

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance Ciss 731 pF VDS = 20V, VGS = 0V, f = 1MHz

Output Capacitance Coss 34 pF

Reverse Transfer Capacitance Crss 23 pF

Gate Resistance Rg 1.3 Ω VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = 10V) Qg 11.5 nC

VDS = 30V, ID = 3A Total Gate Charge (VGS = 4.5V) Qg 5.2 nC

Gate-Source Charge Qgs 2.1 nC

Gate-Drain Charge Qgd 1.5 nC

Turn-On Delay Time tD(ON) 9.6 ns

VGS = 10V, VDS = 30V,

RG = 50Ω, RL = 20Ω

Turn-On Rise Time tR 11 ns

Turn-Off Delay Time tD(OFF) 61 ns

Turn-Off Fall Time tF 21 ns

Notes: 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing.




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0.0

2.0

4.0

6.0

8.0

10.0

0 1 2 3 4 5

I D, D

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NT

(A

)

VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 1. Typical Output Characteristic

VGS = 2.8V

VGS = 3.0V

VGS = 3.5V

VGS = 10.0V

VGS = 4.5V

VGS = 4.0V

0.03

0.04

0.05

0.06

0.07

0.08

0.09

0.1

0 2 4 6 8 10

RD

S(O

N), D

RA

IN-S

OU

RC

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N-R

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AN

CE

(Ω

)

ID, DRAIN-SOURCE CURRENT (A)

Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage

VGS = 4.0V

VGS = 10.0V

0

0.05

0.1

0.15

0.2

0 2 4 6 8 10 RD

S(O

N), D

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IN-S

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(Ω

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ID, DRAIN CURRENT(A)

Figure 5. Typical On-Resistance vs. Drain Current and Temperature

VGS = 4.5V

150oC

125oC

-55oC

25oC

85oC

0.6

0.8

1

1.2

1.4

1.6

1.8

-50 -25 0 25 50 75 100 125 150

RD

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(N

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)

TJ, JUNCTION TEMPERATURE ()

Figure 6. On-Resistance Variation with Temperature

VGS = 10.0V, ID = 5.0A

VGS = 4.5V, ID = 2.0A

0

0.03

0.06

0.09

0.12

0.15

0 2 4 6 8 10 12 14 16 18 20

RD

S(O

N), D

RA

IN-S

OU

RC

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N-R

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IST

AN

CE

(Ω

)

VGS, GATE-SOURCE VOLTAGE (V)

Figure 4. Typical Transfer Characteristic

ID = 1.5A

ID = 0.5A

0

2

4

6

8

10

0 1 2 3 4 5

I D, D

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(A

)



VDS = 5.0V

-55oC

25oC

85oC

150oC

125oC




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0.001

0.01

0.1

1

10

100

0.1 1 10 100

I D, D

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IN C

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(A

)


Figure 12. SOA, Safe Operation Area

TJ(Max)=150

TC=25

Single Pulse DUT on 1*MRP board VGS=10V

RDS(ON) Limited

DC

PW =10s

PW =1s

PW =100ms

PW =10ms

PW =1ms

PW =100µs

0

2

4

6

8

10

0 2 4 6 8 10 12

VG

S (

V)

Qg (nC)

Figure 11. Gate Charge

VDS = 30V, ID = 3A

10

100

1000

10000

0 5 10 15 20 25 30

CT, JU

NC

TIO

N C

AP

AC

ITA

NC

E (

pF

)


Figure 10. Typical Junction Capacitance

f=1MHz

Crss

Coss

Ciss

0

2

4

6

8

10

0 0.3 0.6 0.9 1.2 1.5

I S, S

OU

RC

E C

UR

RE

NT

(A

)

VSD, SOURCE-DRAIN VOLTAGE (V)

Figure 9. Diode Forward Voltage vs. Current

TA = 125oC

TA = 150oC

TA = 85oC

TA = 25oC

TA = -55oC

VGS = 0V

0.5

1

1.5

2

2.5

3

-50 -25 0 25 50 75 100 125 150

VG

S(T

H), G

AT

E T

HR

ES

HO

LD

VO

LT

AG

E (

V)

TJ, JUNCTION TEMPERATURE () Figure 8. Gate Threshold Variation vs. Junction

Temperature

ID = 250µA

ID = 1mA

0

0.03

0.06

0.09

0.12

0.15

-50 -25 0 25 50 75 100 125 150

RD

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VGS = 10.0V, ID = 5.0A

VGS = 4.5V, ID = 2.0A




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0.001

0.01

0.1

1

1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000

r(t)

, T

RA

NS

IEN

T T

HE

RM

AL R

ES

IST

AN

CE

t1, PULSE DURATION TIME (sec)

Figure 13. Transient Thermal Resistance

RθJA(t)=r(t) * RθJA RθJA=134/W Duty Cycle, D=t1 / t2 D=Single Pulse

D=0.005

D=0.01

D=0.02

D=0.05

D=0.1

D=0.3

D=0.5 D=0.9

D=0.7




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Electrical Characteristics Q2 P-CHANNEL (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage BVDSS -60 V VGS = 0V, ID = -250μA

Zero Gate Voltage Drain Current TJ = +25°C IDSS -1 μA VDS = -60V, VGS = 0V

Gate-Source Leakage IGSS ±100 nA VGS = ±16V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage VGS(TH) -1 -3 V VDS = VGS, ID = -250μA

Static Drain-Source On-Resistance RDS(ON) 115 150

mΩ VGS = -10V, ID = -1A

170 250 VGS = -4.5V, ID = -0.5A

Forward Transfer Admittance |Yfs| 2.8 S VDS = -5V, ID = -1A

Diode Forward Voltage VSD -0.7 -1.2 V VGS = 0V, IS = -2A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance Ciss 612 pF VDS = -20V, VGS = 0V, f = 1MHz

Output Capacitance Coss 36 pF

Reverse Transfer Capacitance Crss 26 pF

Gate Resistance Rg 13 Ω VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = -10V) Qg 8.9 nC

VDS = -30V, ID = -2A Total Gate Charge (VGS = -4.5V) Qg 4.3 nC

Gate-Source Charge Qgs 1.4 nC

Gate-Drain Charge Qgd 1.7 nC

Turn-On Delay Time tD(ON) 7.6 ns

VGS = -10V, VDS = -30V,

RG = 50Ω, ID = -1A

Turn-On Rise Time tR 11.6 ns

Turn-Off Delay Time tD(OFF) 79.8 ns

Turn-Off Fall Time tF 37.8 ns

Notes: 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing.




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0.6

0.8

1

1.2

1.4

1.6

1.8

2

-50 -25 0 25 50 75 100 125 150

RD

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IN-S

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(N

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)



VGS = -10.0V, ID = -5.0A

VGS = -4.5V, ID = -2.0A

0

2

4

6

8

10

0 1 2 3 4 5

I D, D

RA

IN C

UR

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(A

)



VDS=- 5.0V

125oC

150oC

-55oC

25oC

85oC

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

0 2 4 6 8 10 12 14 16 18 20

I = -1.0AD

I = -0.5mAD

R,

DR

AIN

-SO

UR

CE

ON

-RE

SIS

TA

NC

E (

)D

S(O

N)

V , GATE-SOURCE VOLTAGE (V)GSFigure 17 Typical Drain-Source On-Resistance

vs. Gate-Source Voltage

0

0.1

0.2

0.3

0.4

0.5

0 2 4 6 8 10

V = -4.5VGS

V = -10VGS

R, D

RA

IN-S

OU

RC

E O

N-R

ES

ISTA

NC

E (

)D

S(O

N)

I , DRAIN SOURCE CURRENT (A)D

Figure 16 Typical On-Resistance vs. Drain Current and Gate Voltage

0

0.1

0.2

0.3

0.4

0.5

0 2 4 6 8 10

RD

S(O

N), D

RA

IN-S

OU

RC

E O

N-R

ES

IST

AN

CE

(Ω

)

ID, DRAIN CURRENT (A)

Figure 18. Typical On-Resistance vs. Drain Current and Temperature

VGS= -4.5V

125oC 150oC

-55oC

25oC

85oC

0.0

2.0

4.0

6.0

8.0

10.0

0 1 2 3 4 5

V = -4.0VGS

V = -4.5VGSV = -10VGS

V = -2.8VGSV = -3.0VGS

V = -3.5VGS

V = -2.5VGS

I,

DR

AIN

CU

RR

EN

T (A

)D

V , DRAIN -SOURCE VOLTAGE (V)DS

Figure 14 Typical Output Characteristics




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10

100

1000

10000

0 5 10 15 20 25 30

CT, JU

NC

TIO

N C

AP

AC

ITA

NC

E (pF

)


Figure 22. Typical Junction Capacitance

f=1MHz

Ciss

Coss

Crss

0.001

0.01

0.1

1

10

100

0.1 1 10 100

I D, D

RA

IN C

UR

RE

NT

(A

)


Figure 24. SOA, Safe Operation Area

TJ (Max)=150

TC=25

Single Pulse DUT on 1*MRP board VGS=10V

RDS(ON) Limited

DC

PW =10s

PW =1s

PW =100ms

PW =10ms

PW =1ms

PW =100µs

0

2

4

6

8

10

0 2 4 6 8 10

VG

S (

V)

Qg (nC)

Figure 23. Gate Charge

VDS = -30V, ID = -2A

0

0.5

1

1.5

2

2.5

3

-50 -25 0 25 50 75 100 125 150

VG

S(T

H), G

AT

E T

HR

ES

HO

LD

VO

LT

AG

E (

V)

TJ, JUNCTION TEMPERATURE () Figure 21. Gate Threshold Variation vs. Junction

Temperature

ID = -1mA

ID = -250µA

0

0.05

0.1

0.15

0.2

0.25

0.3

-50 -25 0 25 50 75 100 125 150

RD

S(O

N), D

RA

IN-S

OU

RC

E O

N-R

ES

IST

AN

CE

(Ω

)



VGS = -4.5V, ID = -2.0A

VGS = -10.0V, ID = -5.0A




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0.001

0.01

0.1

1

1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000

r(t)

, T

RA

NS

IEN

T T

HE

RM

AL R

ES

IST

AN

CE

t1, PULSE DURATION TIME (sec)

Figure 25. Transient Thermal Resistance

D=0.9

RθJA(t)=r(t) * RθJA RθJA=134/W Duty Cycle, D=t1 / t2 D=Single Pulse

D=0.005

D=0.01

D=0.02

D=0.05

D=0.1

D=0.3

D=0.5

D=0.7




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Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.

POWERDI3333-8 (Type UXB)

Dim Min Max Typ

A 0.75 0.85 0.80

A1 0.00 0.05 --

b 0.25 0.40 0.32

c 0.10 0.25 0.15

D 3.20 3.40 3.30

D1 2.95 3.15 3.05

D2 0.10 0.35 0.23

E 3.20 3.40 3.30

E1 2.95 3.15 3.05

E2 0.10 0.30 0.20

e 0.65

L 0.35 0.55 0.45

a 0° 12° 10° All Dimensions in mm

Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

Dimensions Value (in mm)

C 0.650

X 0.420

X1 2.370

Y 0.730

Y1 3.500

D

EE1

D1

A

c

L

L

E2

be

D2

A1

a

X1

Y1

Y

C X

Y






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IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.

LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated www.diodes.com

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