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GaN HPA optimized for telecom - Linearity results & DPD ... Amplificateur... · GaN HPA optimized...

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GaN HPA optimized for telecom - Linearity results & DPD assessment March 2017 [email protected]
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GaN HPA optimized for telecom -Linearity results & DPD assessmentMarch 2017 [email protected]

GaN technology toward 5G

1. Toward 5G with GaN

2. AB class HPA optimization

All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS

Date / Ref doc 2

3. Doherty linearity assessment

4. Conclusion

GaN technology toward 5G

1. Toward 5G with GaN

2. AB class HPA optimization

All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS

Date / Ref doc 3

3. Doherty linearity assessment

4. Conclusion

� Fixed-wireless access as the first phase of 5G deployments� AT&T, Verizon, Nokia trials in the US

� mmWave spectrum: 27.5-28.35 / 37-38.6GHz / 38.6-40 / 57-71 GHz

� Qualcomm Snapdragon X50 5G modem (800 MHz / 28GHz � 5Gb/s)

� Maxlinear (former Broadcom) BCM85100 (FDD / 60 GHz � 10 Gbps)

What is the need?

Toward 5G with GaN – Fixed-Wireless

All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS

Date / Ref doc 4

wwWave ICs suitable for 5G fixed-wireless access

� Phase Array antenna and massive MIMO techniques� Ericsson, Huwaei, NTT Docomo & Samsung trials

� User and Spatial multiplexing increasing bit rates

� Beamforming for propagation loss compensation

Front-end technology?

Toward 5G with GaN – TRx for Phase Array

Phase array antenna

TRx device

All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS

Date / Ref doc

� Key parameters:� Efficiency

� Dimension, Integration

� Cost

� Linearity

� Broad bandwidth

5

PA

LNAPS

PS

SWSW

GaN technology is offering High Power Density & High PAE

TRx Half-duplex architecture

� To pass spectrum requirement� System figure of merit to translate into component requirement

� Linked to “intrinsic linearity” of the HPA

� Performances defined at back-off vs Psat (due to PDF)

Application requires linearity

Toward 5G with GaN – Design & Challenges

PAE vs Output Average Power

All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS

Date / Ref doc

� TX chain to be compatible with Digital Pre-Distorsion system� System validation required

� DPD to be implemented

6

Generation of RF vector Signal

Sampling, Demodulation & Analysis

DPD Loop

DUTDRV

Test Bench Synoptic

� Goals:� Demonstrate high linearity on GH25

� Provide HPA compatible with DPD

� Challenges:� Modeling accuracy

Memory effects (traps, decoupling circuit, …)

New approach for circuit design

Toward 5G with GaN – Design & Challenges

GaN / 10W Run#1

GaN / 10W Run#1

2 Tones Load-pull on GH25 Tr

Simu vs Meas.

All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS

Date / Ref doc

� Memory effects (traps, decoupling circuit, …)

� Unbalanced spectrum

7

GaAs / CHA6552-QJGGaN / 10W Run#1

GaN technology toward 5G

1. Toward 5G with GaN

2. AB class HPA optimization

All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS

Date / Ref doc 8

3. Doherty linearity assessment

4. Conclusion

-24

-20

Main Features� 5.5- 7.5 GHz� Psat > 39dBm� Gain = 18dB� C/I3 = 34dBc @10dB back-off� MERwoDPD = -27dB @30dBm� MERwithDPD < -50dB @30dBm� DC bias: Vd = 25V / IdQ = 340mA� UMS GaN 0.25um / QFN 6x5 / MSL3

AB class HPA – GH25 Example

MER& ACPR (dB) versus Output Power (dBm)Vd=25V, IdQ1=220mA / IdQ2=200mA

All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS

Date / Ref doc

-60

-56

-52

-48

-44

-40

-36

-32

-28

25 26 27 28 29 30 31 32 33 34 35 36

ME

R &

AC

PR

(dB

)

Average Output power (dBm)

MER w/o DPD

MER with DPD

ACPR w/o DPD

ACPR with DPD

9

GaN HPA compatible with low consumption DPD

>20dB

Vd=25V, IdQ1=220mA / IdQ2=200mAQAM256 / CS=56MHz / RRC=0.2

� RUN1: Classical trade-off Pout/PAE� PSAT > 3W/mm (@8dBcomp)

� PAEmax # 35%

� High Linear Gain # 22dB

� Smooth compression

� Wide band

AB class HPA – Way to design

Run1

All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS

Date / Ref doc

� RUN2: Linearity oriented � Same output stage size

� Tighter AM/AM & AM/PM variation

� Optimum impedance & biasing for IM3

� Back-off between stages increased

� Enhanced on chip decoupling

� 2nd harmonic load

10

☺ C/I3 improved & flattened� Linear Gain & Frequency Band reduced

Run2

AB class HPA – Designs Comparison

IMD3 vs PoutAt nominal biasing

IMD3 vs PoutAt optimum biasing

-30

-28

-26

-24

-22

-20

-18

-16

IMD

3 (d

Bc)

IMD3_Low Run#1@NominalIMD3_High Run#1@NominalIMD3_LOW Run#2@NominalIMD3_High Run#2@Nominal

-30

-28

-26

-24

-22

-20

-18

-16

IMD

3 (d

Bc)

IMD3_Low Run#1@Optimum

IMD3_High Run#1@Optimum

IMD3_LOW Run#2@Optimum

IMD3_High Run#2@Optimum

All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS

Date / Ref doc 11

-46

-44

-42

-40

-38

-36

-34

-32

-30

22 24 26 28 30 32 34 36 38

IMD

3 (d

Bc)

Output Power DCL (dBm)

-46

-44

-42

-40

-38

-36

-34

-32

-30

22 24 26 28 30 32 34 36 38

IMD

3 (d

Bc)

Output Power DCL (dBm)

IMD3 improvement at 30dBm (# 10 B.O.)� Linearity better around average power for a 256QAM signal

-28

-26

-24

-22

-20

-18

-16

IMD

3 (d

Bc)

IMD3_LOW @10kHzIMD3_High @10kHzIMD3_Low @100kHzIMD3_High @100kHzIMD3_Low @1MHzIMD3_High @1MHzIMD3_Low @2MHzIMD3_High @2MHzIMD3_Low @5MHzIMD3_High @5MHzIMD3_Low @10MHzIMD3_High @10MHzIMD3_Low @20MHz

IMD3 vs Pout – Run#2∆F = 10 kHz to 40MHz

Spectrum – Run#2PAVG=30dBm / I DQnom

QAM256 / CS=56MHz / Poly-DPD

AB class HPA – Enhanced decoupling

ACPR # 34dB

All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS

Date / Ref doc

-46

-44

-42

-40

-38

-36

-34

-32

-30

22 24 26 28 30 32 34 36 38

IMD

3 (d

Bc)

Output Power DCL (dBm)

IMD3_Low @20MHzIMD3_High @20MHzIMD3_Low @30MHzIMD3_High @30MHzIMD3_Low @40MHz

12

Enhanced decoupling from kHz to MHz ensurebalanced spectrum in modulation

Un-balanced tones at 10KHzFully balanced tones from 100kHz to 40MHz Fully balanced spectrum each side

of 56MHz signal bandwidth

Run#1F=7GHz / Pout AVG=30dBm / I DQnom

QAM256 / CS=56MHz / Poly-DPD

Run#2FRF=7GHz / Pout AVG=30dBm / I DQnom

QAM256 / CS=56MHz / Poly-DPD

AB class HPA – Spectrum with & w/o DPD

All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS

Date / Ref doc 13

Intrinsic ACPR improvement and balanced correction on Run#2� Run#2 design easily linearizable with DPD

ACPRwithDPD – ACPRw/oDPD # 20dBACPRwithDPD – ACPRw/oDPD # 5dB

Run#1F=7GHz / Pout AVG=30dBm / I DQnom

QAM256 / CS=56MHz / Poly-DPD

Run#2FRF=7GHz / Pout AVG=30dBm / I DQnom

QAM256 / CS=56MHz Poly-DPD

AB class HPA – Constellation with DPD

MER = -33dB (with DPD) MER = -57dB (with DPD)

All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS

Date / Ref doc 14

Constellation with DPD Constellation with DPD

Less distortion, dynamic effects and noise on Run#2 � Better Modulation Error Ratio

GaN technology toward 5G

1. Toward 5G with GaN

2. AB class HPA optimization

All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS

Date / Ref doc 15

3. Doherty linearity assessment

4. Prospects

� Doherty is very suitable for application with PAR providing constant PAE at back-off

Doherty – Suitable for high PAR

AB/B class PAE & PDF vs P AVG Doherty PAE & PDF vs P AVG

PDF PAE PDF PAE

All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS

Date / Ref doc 16

Pout dBm

Pout(t)

Pout dBm

Pout(t)

PAE Classe BPAE Souhaitée

� Doherty behaviour difficult to predict� Modulation of the main amplifier drain load by the peak amplifier

� AM/AM & AM/PM sensitive to bias

� Compatibility with DPD to be assessed

Doherty – Linearity is a challenge

Zc, λ/4

90°

Main (AB/B class)

Example of AM/AM & AM/PM vs biasing

All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS

Date / Ref doc 18

90°

Peak (C class)

PAE Main

PAE Peak

PAE Doherty

Pout

PAE

PSATPOBO

35

40

7.1 GHz

7.5 GHz

Doherty – GH25 Q-MMIC Example

Main Features� 7-8 GHz� Psat > 42dBm� Gain > 18dB� C/I3 > 20dBc @10dB back-off� MERwoDPD = -24dB @32dBm� MERwithDPD = -48dB @32dBm� PAE > 24% @32dBm� UMS GaN 0.25um / QFN 8x8

-24

-20

All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS

Date / Ref doc

0

5

10

15

20

25

30

35

20 22 24 26 28 30 32 34 36 38 40 42

PAE

(%)

Output power (dBm)

7.5 GHz

7.9 GHz

18

DPD able to linearize Doherty PA

-60

-56

-52

-48

-44

-40

-36

-32

-28

28 29 30 31 32 33 34 35 36

ME

R &

AC

PR

(dB

)

Average Output power (dBm)

MER w/o DPD

MER with DPD

ACPR w/o DPD

ACPR with DPD

PAE >24%

# 14dB

MER = -48dB (with DPD)

Doherty – Spectrum with & w/o DPD

Doherty with & w/o DPDF=7.3GHz / Pout AVG=32dBm / I DQopt

QAM256 / CS=28MHz / Poly-DPD

Doherty with DPDF=7.3GHz / Pout AVG=32dBm / I DQopt

QAM256 / CS=28MHz / Poly-DPD

All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS

Date / Ref doc 19

Significant ACPR improvement with DPD. Low dynamic effects. � DPD capability demonstrated with Doherty PA

ACPRwithDPD – ACPRw/oDPD # 15dB

Synthesis

System Validation – Modulation & DPD

w/o DPD DPD w/o memory DPD with memory

Run#1 ACPR=-30dBcMER=-26dB

ACPR=35dBcMER=-33dB

ACPR=39dBcMER=-34dB

Run#2 ACPR=-35dBcMER=-28dB

ACPR=57dBcMER=-55dB

ACPR=60dBcMER=-57dB

Doherty ACPR=-28dBc ACPR=-52dBc ACPR=-56dBc

All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS

Date / Ref doc 20

MER=-24dB MER=-48dB MER=-50dB

AB class Run#2 � significant improvement vs Run#1Doherty � promising results

GaN technology toward 5G

1. Toward 5G with GaN

2. AB class HPA optimization

All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS

Date / Ref doc 21

3. Doherty linearity assessment

4. Conclusion

Conclusion

Linear HPA can be achieved with GaN Technology

All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS

Date / Ref doc 22

Low consumption DPD able to linearize GaN HPA(AB class and also Doherty PA)

GaN a good candiate for future of telecom applications (PtP booster / 5G BTS TRx module)

All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS

Date / Ref doc 23

THANK YOU


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