GaN HPA optimized for telecom -Linearity results & DPD assessmentMarch 2017 [email protected]
GaN technology toward 5G
1. Toward 5G with GaN
2. AB class HPA optimization
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Date / Ref doc 2
3. Doherty linearity assessment
4. Conclusion
GaN technology toward 5G
1. Toward 5G with GaN
2. AB class HPA optimization
All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS
Date / Ref doc 3
3. Doherty linearity assessment
4. Conclusion
� Fixed-wireless access as the first phase of 5G deployments� AT&T, Verizon, Nokia trials in the US
� mmWave spectrum: 27.5-28.35 / 37-38.6GHz / 38.6-40 / 57-71 GHz
� Qualcomm Snapdragon X50 5G modem (800 MHz / 28GHz � 5Gb/s)
� Maxlinear (former Broadcom) BCM85100 (FDD / 60 GHz � 10 Gbps)
What is the need?
Toward 5G with GaN – Fixed-Wireless
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Date / Ref doc 4
wwWave ICs suitable for 5G fixed-wireless access
� Phase Array antenna and massive MIMO techniques� Ericsson, Huwaei, NTT Docomo & Samsung trials
� User and Spatial multiplexing increasing bit rates
� Beamforming for propagation loss compensation
Front-end technology?
Toward 5G with GaN – TRx for Phase Array
Phase array antenna
TRx device
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Date / Ref doc
� Key parameters:� Efficiency
� Dimension, Integration
� Cost
� Linearity
� Broad bandwidth
5
PA
LNAPS
PS
SWSW
GaN technology is offering High Power Density & High PAE
TRx Half-duplex architecture
� To pass spectrum requirement� System figure of merit to translate into component requirement
� Linked to “intrinsic linearity” of the HPA
� Performances defined at back-off vs Psat (due to PDF)
Application requires linearity
Toward 5G with GaN – Design & Challenges
PAE vs Output Average Power
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Date / Ref doc
� TX chain to be compatible with Digital Pre-Distorsion system� System validation required
� DPD to be implemented
6
Generation of RF vector Signal
Sampling, Demodulation & Analysis
DPD Loop
DUTDRV
Test Bench Synoptic
� Goals:� Demonstrate high linearity on GH25
� Provide HPA compatible with DPD
� Challenges:� Modeling accuracy
Memory effects (traps, decoupling circuit, …)
New approach for circuit design
Toward 5G with GaN – Design & Challenges
GaN / 10W Run#1
GaN / 10W Run#1
2 Tones Load-pull on GH25 Tr
Simu vs Meas.
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Date / Ref doc
� Memory effects (traps, decoupling circuit, …)
� Unbalanced spectrum
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GaAs / CHA6552-QJGGaN / 10W Run#1
GaN technology toward 5G
1. Toward 5G with GaN
2. AB class HPA optimization
All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS
Date / Ref doc 8
3. Doherty linearity assessment
4. Conclusion
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Main Features� 5.5- 7.5 GHz� Psat > 39dBm� Gain = 18dB� C/I3 = 34dBc @10dB back-off� MERwoDPD = -27dB @30dBm� MERwithDPD < -50dB @30dBm� DC bias: Vd = 25V / IdQ = 340mA� UMS GaN 0.25um / QFN 6x5 / MSL3
AB class HPA – GH25 Example
MER& ACPR (dB) versus Output Power (dBm)Vd=25V, IdQ1=220mA / IdQ2=200mA
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Date / Ref doc
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25 26 27 28 29 30 31 32 33 34 35 36
ME
R &
AC
PR
(dB
)
Average Output power (dBm)
MER w/o DPD
MER with DPD
ACPR w/o DPD
ACPR with DPD
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GaN HPA compatible with low consumption DPD
>20dB
Vd=25V, IdQ1=220mA / IdQ2=200mAQAM256 / CS=56MHz / RRC=0.2
� RUN1: Classical trade-off Pout/PAE� PSAT > 3W/mm (@8dBcomp)
� PAEmax # 35%
� High Linear Gain # 22dB
� Smooth compression
� Wide band
AB class HPA – Way to design
Run1
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Date / Ref doc
� RUN2: Linearity oriented � Same output stage size
� Tighter AM/AM & AM/PM variation
� Optimum impedance & biasing for IM3
� Back-off between stages increased
� Enhanced on chip decoupling
� 2nd harmonic load
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☺ C/I3 improved & flattened� Linear Gain & Frequency Band reduced
Run2
AB class HPA – Designs Comparison
IMD3 vs PoutAt nominal biasing
IMD3 vs PoutAt optimum biasing
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IMD
3 (d
Bc)
IMD3_Low Run#1@NominalIMD3_High Run#1@NominalIMD3_LOW Run#2@NominalIMD3_High Run#2@Nominal
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IMD
3 (d
Bc)
IMD3_Low Run#1@Optimum
IMD3_High Run#1@Optimum
IMD3_LOW Run#2@Optimum
IMD3_High Run#2@Optimum
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Date / Ref doc 11
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IMD
3 (d
Bc)
Output Power DCL (dBm)
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IMD
3 (d
Bc)
Output Power DCL (dBm)
IMD3 improvement at 30dBm (# 10 B.O.)� Linearity better around average power for a 256QAM signal
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IMD
3 (d
Bc)
IMD3_LOW @10kHzIMD3_High @10kHzIMD3_Low @100kHzIMD3_High @100kHzIMD3_Low @1MHzIMD3_High @1MHzIMD3_Low @2MHzIMD3_High @2MHzIMD3_Low @5MHzIMD3_High @5MHzIMD3_Low @10MHzIMD3_High @10MHzIMD3_Low @20MHz
IMD3 vs Pout – Run#2∆F = 10 kHz to 40MHz
Spectrum – Run#2PAVG=30dBm / I DQnom
QAM256 / CS=56MHz / Poly-DPD
AB class HPA – Enhanced decoupling
ACPR # 34dB
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Date / Ref doc
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22 24 26 28 30 32 34 36 38
IMD
3 (d
Bc)
Output Power DCL (dBm)
IMD3_Low @20MHzIMD3_High @20MHzIMD3_Low @30MHzIMD3_High @30MHzIMD3_Low @40MHz
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Enhanced decoupling from kHz to MHz ensurebalanced spectrum in modulation
Un-balanced tones at 10KHzFully balanced tones from 100kHz to 40MHz Fully balanced spectrum each side
of 56MHz signal bandwidth
Run#1F=7GHz / Pout AVG=30dBm / I DQnom
QAM256 / CS=56MHz / Poly-DPD
Run#2FRF=7GHz / Pout AVG=30dBm / I DQnom
QAM256 / CS=56MHz / Poly-DPD
AB class HPA – Spectrum with & w/o DPD
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Date / Ref doc 13
Intrinsic ACPR improvement and balanced correction on Run#2� Run#2 design easily linearizable with DPD
ACPRwithDPD – ACPRw/oDPD # 20dBACPRwithDPD – ACPRw/oDPD # 5dB
Run#1F=7GHz / Pout AVG=30dBm / I DQnom
QAM256 / CS=56MHz / Poly-DPD
Run#2FRF=7GHz / Pout AVG=30dBm / I DQnom
QAM256 / CS=56MHz Poly-DPD
AB class HPA – Constellation with DPD
MER = -33dB (with DPD) MER = -57dB (with DPD)
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Date / Ref doc 14
Constellation with DPD Constellation with DPD
Less distortion, dynamic effects and noise on Run#2 � Better Modulation Error Ratio
GaN technology toward 5G
1. Toward 5G with GaN
2. AB class HPA optimization
All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS
Date / Ref doc 15
3. Doherty linearity assessment
4. Prospects
� Doherty is very suitable for application with PAR providing constant PAE at back-off
Doherty – Suitable for high PAR
AB/B class PAE & PDF vs P AVG Doherty PAE & PDF vs P AVG
PDF PAE PDF PAE
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Date / Ref doc 16
Pout dBm
Pout(t)
Pout dBm
Pout(t)
PAE Classe BPAE Souhaitée
� Doherty behaviour difficult to predict� Modulation of the main amplifier drain load by the peak amplifier
� AM/AM & AM/PM sensitive to bias
� Compatibility with DPD to be assessed
Doherty – Linearity is a challenge
Zc, λ/4
90°
Main (AB/B class)
Example of AM/AM & AM/PM vs biasing
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Date / Ref doc 18
90°
Peak (C class)
PAE Main
PAE Peak
PAE Doherty
Pout
PAE
PSATPOBO
35
40
7.1 GHz
7.5 GHz
Doherty – GH25 Q-MMIC Example
Main Features� 7-8 GHz� Psat > 42dBm� Gain > 18dB� C/I3 > 20dBc @10dB back-off� MERwoDPD = -24dB @32dBm� MERwithDPD = -48dB @32dBm� PAE > 24% @32dBm� UMS GaN 0.25um / QFN 8x8
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Date / Ref doc
0
5
10
15
20
25
30
35
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PAE
(%)
Output power (dBm)
7.5 GHz
7.9 GHz
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DPD able to linearize Doherty PA
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ME
R &
AC
PR
(dB
)
Average Output power (dBm)
MER w/o DPD
MER with DPD
ACPR w/o DPD
ACPR with DPD
PAE >24%
# 14dB
MER = -48dB (with DPD)
Doherty – Spectrum with & w/o DPD
Doherty with & w/o DPDF=7.3GHz / Pout AVG=32dBm / I DQopt
QAM256 / CS=28MHz / Poly-DPD
Doherty with DPDF=7.3GHz / Pout AVG=32dBm / I DQopt
QAM256 / CS=28MHz / Poly-DPD
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Date / Ref doc 19
Significant ACPR improvement with DPD. Low dynamic effects. � DPD capability demonstrated with Doherty PA
ACPRwithDPD – ACPRw/oDPD # 15dB
Synthesis
System Validation – Modulation & DPD
w/o DPD DPD w/o memory DPD with memory
Run#1 ACPR=-30dBcMER=-26dB
ACPR=35dBcMER=-33dB
ACPR=39dBcMER=-34dB
Run#2 ACPR=-35dBcMER=-28dB
ACPR=57dBcMER=-55dB
ACPR=60dBcMER=-57dB
Doherty ACPR=-28dBc ACPR=-52dBc ACPR=-56dBc
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Date / Ref doc 20
MER=-24dB MER=-48dB MER=-50dB
AB class Run#2 � significant improvement vs Run#1Doherty � promising results
GaN technology toward 5G
1. Toward 5G with GaN
2. AB class HPA optimization
All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS
Date / Ref doc 21
3. Doherty linearity assessment
4. Conclusion
Conclusion
Linear HPA can be achieved with GaN Technology
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Date / Ref doc 22
Low consumption DPD able to linearize GaN HPA(AB class and also Doherty PA)
GaN a good candiate for future of telecom applications (PtP booster / 5G BTS TRx module)