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GaN & SiC Technologies for Power Electronics
www.richardsonrfpd.comFEBRUARY 2019
for POWER ELECTRONICSYour source for GaN & SiC news and innovation for power electronics
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Your Global Source for RF, Wireless, IoT & Power Technologies www.richardsonrfpd.com | 800.737.6927 | 630.262.6800
Your Source for GaN and SiC ProductsSilicon Carbide (SiC)Silicon carbide (SiC) offers significant advantages in high-power, high-voltage applications where power density, higher performance and reliability are of the utmost importance. Solar inverters, welding, plasma cutters, fast vehicle chargers and oil exploration are a few examples of industrial applications that benefit from the higher breakdown field strength and improved thermal conductivity that SiC offers over silicon (Si) material.
SiC MOSFETs produce much lower switching losses compared to Si IGBTs, as shown in the yellow-highlighted areas below:
Si IGBT SiC MOS
Voltage
Turn
Off
Turn
On Eon = 10.0 mJ
Eoff = 11.2 mJ
Eon = 3.3 mJ
Eoff = 3.2 mJ
SiC Schottky diodes have near-zero reverse recovery losses compared to Si FREDs and are stable over temperature:
Current
Voltage
Current
Current
Current
Voltage
Voltage
SiC MOSFETs have a much more stable RDS(on) over temperature than Si MOSFETs.
SiC MOSFETs include a robust body diode with much lower reverse recovery charge (Qrr) and reverse recovery time (Trr) than Si MOSFETs.
Advantages of designing in SiC include: • SiC diodes have near-zero reverse recovery current • Improved efficiencies and decreased thermal dissipation • Smaller power electronics and system size • Higher power density • Higher operating frequency • Simple parallel operation • Reduced overall system cost
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$450.00
$400.00
$350.00
$300.00
$250.00
$200.00
$150.00
$100.00
$50.00
$0China Brazil UK Japan Spain Germany DenmarkUSA
2919 14 11 9 8 7 6
Savings/YR Pay Back Period (Months)• $200 cost differential between Si and SiC Module.• Motor operated for 16 Hrs daily every day.• Assuming 0.8% improvement in operational efficiency for the SiC motor drive.
Design in SiC to substantially reduce switching and conduction losses, while minimizing heat sink size and cost:
Lower losses lead to higher efficiencies and lower energy consumption, resulting in lifelong savings:
Use SiC products to restructure, not increase overall system cost.
Need to transfer 10kW
IGBT + Si Diode
SiC MOSFET + SiC Diode
SiC MOSFET + SiC Diode
Switching Frequency 20kHz 60kHz 100kHzInductors $62 $35 $20Capacitors $65 $65 $65Cooling $45 $30 $38Power Semiconductors $10 $40 $40Total $182 $170 $163
Use SiC Performance Advantages to Reduce Total Cost
Comparison based on:• 10kW interleaved boost converter• Output Power: 10kW
Design Options using SiC to reduce $ per Watt
Option 1Higher Power
50 HP instead of 30 HP
Option 2Smaller Cooling
at same 30 HP
Option 3 Smaller Cooling + Higher Frequency
at same 30 HP
FSW = 8 kHzRØ HS = 0.16 °C/WPLOSS Total = 369 W
n = 99.0%TJ = 127 °C
FSW = 8 kHzRØ HS = 0.55 °C/W (1/3 size)
PLOSS Total = 153 Wn = 99.3%
TJ = 135 °C
FSW = 35 kHz (>4×) RØ HS = 0.4 °C/W (2/3 size)
PLOSS Total = 204 W n = 99.1%
TJ = 136 °C
SiDrive
SiCDrive
SiDrive
Si Heat Sink
SiC HS
30 HP
50 HPSiCDrive
• Input Voltage Range: 300VDC - 450VDC• Output/DC-Link Voltage: 640VDC
3
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Gallium Nitride (GaN)
Gallium Nitride, a wide band gap semiconductor, is rapidly displacing Silicon as the material of choice for power transistors. With their superior material properties and simplicity of use, Gan Systems’ GaN E-HEMTs* allow designers to set new standards for efficiency, power density, size and weight.
GaN E-HEMTs are easy to use• Voltage driven, like MOSFETs• True enhancement-mode, normally off• Easily driven by Si or GaN-specific gate driver• Conventional slew rate control using RG• Simple paralleling
GaN E-HEMT’s Key Properties - Benefits• ZERO reverse recovery – Low power loss, high efficiency• High switching frequency – Size reduction, high power density• Bi-directional conduction – New high efficiency topologies• Intrinsically stable paralleling – Broad power range
GaN Systems vs Si IGBT: Switching loss comparison- Eon/Eoff
Eon/Eoff measurement (20 ns/div). 400V/15A, 100kHz, Half Bridge
GaN Systems - GS66508T Eon=52uJ Infineon IGBT - IKW30N60H3 Eon=492uJ
GaN Systems - GS66508T Eoff=12uJ Infineon IGBT - IKW30N60H3 Eoff=96uJ
ZERO Qrr loss yields higher efficiencies
ZERO Qrr period yields higher switching frequencies
Turn-on loss vs Frequency, hard switching
Zero Reverse Recovery
Frequency
QRR + QOSS
IPW65R048CFDA GS66508T
30kHz 22W 0.5W
100kHz 72W 1.5W
200kHz 144W 3.0W
Turn-on loss comparison @ 400V/22A
VDS
ID
Eon = 6670µJ
VDS
ID
Eon = 92µJ
QRR + QOSS loss
Qoss loss only
Silicon
GaN E-HEMTs have 10x lower Eon/Eoff switching losses compared to Silicon IGBTs.
Eon/Eoff switching loss
D
S
G
bodydiode
GATE
SOURCE
DRAIN
VDS
EON
VGS
ID
VDS
ID
VGS
EOFF
IC
VGE
EOFF
VCE
IC
VGE
EON
VCE
4
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Semi-bridgeless PFC
PFC System Cost Comparison: GaN Systems E-HEMT vs Si MOSFET
Bridgeless Totem Pole PFC
Reduce system cost by 15% and part count by 33% by using GaN over Si.
GaN enables smaller, more efficient, lower cost PFC solutions
• Zero Reverse Recovery• Reverse conduction• Anti-Parallel Diode not required
cost
(%)
TotemPole
Semi-bridgeless
Silicon
GaN Systems Enables Compact, Inexpensive, High Power Wireless Charging
Transmit (Tx)
→ →DC
PowerSupply
GaNSystems
Power Amplifier
ImpedanceMatchingNetwork
Magnetic Resonant Coupling 6.78MHz
→→→→ Rectifier
Stage
ImpedanceMatchingNetwork
Load
Receive (Rx)
Wireless Power –A Comparison of Key Technologies
TECHNOLOGY INDUCTIVE MAGNETIC RESONANCE
Consumer Standard body Wireless Power Consortium AirFuel Alliance
Frequency range 80-300kHz 6.78MHz
Max transfer range 5mm 50mm
Multi-device charging No Yes - At different power levels
Spatial Freedom Low High
Power Range Low & limited - 30W max Broad & versatile - 20W to 20kW+
Efficiency Limited to 80% High: up to 95%
5
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GaN-on-Si E-HEMT Discrete
SiC MOSFET Discrete
SiC MOSFET Module
SiC/Si Hybrid Modules
SiC Diode Discrete
SiC Diode Module
Voltage 100V, 650V — — — — —
Current 3.5A - 120A — — — — —
Rds(on) 5mΩ - 500mΩ — — — — —
Packages (mm)
4.5x5, 7x4, 7.5x4.6, 6.6x5, 5.5x4.5, 7x4.4, 8.4x7, 9x7.6,
11x9, 11.8x5.3, 12.7x5.6, 5x6 PDFN
— — — — —
Voltage —
700V,
1200V,
1700V
900V,
1200V,
1700V
500V, 600V,
800V, 900V,
1000V, 1200V
700V,
1200V,
1700V
600V,
1200V
Current — 5A - 166A 20A - 586A 11A - 110A 10A - 50A 10A - 60A
Rds(on) —15mΩ - 750mΩ
2.1mΩ - 80mΩ — — —
Packages (mm)
—
TO-247,
SOT-227,
D3PAK
D3, SOT-227,
SP1, SP3F, SP6, SP6P, SP6LI
SOT-227, SP1, SP3F, SP4, SP6, SP6P
TO-220,
TO-247,
D3PAK
SP1,
SOT-227
Voltage — — 1200V 600V, 1200V, 1700V 600V —
Current — — 15A - 800A 20A - 1200A 20A —
Rds(on) — — 1.6mΩ - 3.1mΩ — — —
Packages (mm)
— —
50x120, 48x94,
76x108, 92x122,
130x140, 56x110,
80x110, 67x131,
Super Mini DIP
48x94,
76x108,
80x110,
130x140,
Super Mini DIP
TO-220-2L —
Voltage — — 900V, 1200V 1200V, 2400V — —
Current — — 20A - 140A 100A - 150A — —
Rds(on) — — 17mΩ - 80mΩ 8mΩ - 27mΩ — —
Packages (mm)
— —
flow 0,
flow 1,
flow 2
flow 0,
flow 1— —
Voltage —
900V,
1000V,
1200V,
1700V
1200V,
1700V—
600V,
650V,
1200V,
1700V
—
Current — 5A - 90A 20A - 325A — 1A -50A —
Rds(on) —16mΩ -
1000mΩ3.7mΩ - 80mΩ —
——
Packages (mm)
—
TO-247-3,
TO-247-4,
TO-263-7
45 x 108,
62 x 108,
High Perf (65 x 110)
—
TO-220-2, TO-220-F2 (Full pack), TO-252-2
(DPAK), TO-263-2 (D2PAK),
TO-247-2, TO-247-3,
TO-220 Iso, QFN
—
GaN and SiC Discrete and Module Offering
Franchised for Mitsubishi in NA only.
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High-speed Gate Drivers for GaN & SiC
Tamura’s 2DM180506CM and 2DM180206CM gate driver modules feature the characteristics – low common-mode noise and high-speed response – required for driving silicon carbide modules. Additional features of this series include:
• Integrated DC/DC converter with gate driver • Dielectric withstand voltage: AC 2500Vrms• Low common mode noise (parasitic capacitance: 15pF typical) • Fast response (100ns typical)• 5V logic input • Over current protection by DESAT detection
Part Number Output Voltage Peak Output Current (A) Max Switching Frequency (kHz)2DM180506CM +18 V / -5 V 18A source/sink 200
2DM180206CM +18 V / -2 V 18A source/sink 200
pSemi’s UltraCMOS® technology enables integrated circuits to operate at much faster speeds than conventional CMOS technologies. With a switching frequency up to 40 MHz (PE29102), pSemi’s GaN FET drivers deliver the industry’s fastest switching speeds, empowering design engineers to extract the full performance advantages from GaN transistors, resulting in significantly smaller power converters with increased power density.
Part Number Max Gate Drive Peak Output Current Frequency Propagation DelayPE29101 6.5V 2A/4A source/sink 40MHz 11ns
PE29102 6.0V 2A/4A source/sink 40MHz 9ns
Wolfspeed offers a range of gate driver products for their discrete and module SiC devices with 1, 2 and 6 channel outputs. These products are designed to maximize performance and feature isolated power supplies, and module products also feature short circuit, over temperature and under voltage protection in direct mount, low inductance designs.
Part Number Outputs Device Voltage Peak Output Current Products FrequencyCGD15FB45P1 6 1200V 9A CCSxxxM12CM2 250kHz
CGD15HB62P1 2 1200V 9A CASxxxM12BM2 64kHz
CRD-001 1 1200V, 1700V 9A C2M/CMF —
CGD15HB62LP 2 1200V 14A CAS325M12HM2 115kHz
CGD15SG00D2 1 900V, 1200V 9A C3M —
CGD15HB62LPCGD15FB45P1 CRD-001 CGD15HB62P1 CGD15SG00D2
Microsemi offers gate drive modules to maximize the performance of their SiC products. The MSCSICMDD/REF1 is a universal SiC driver with adjustable output that can be used on most modules. The MSCSICSP3/REF2 is specifically designed for easy mounting to SiC offering in the SP3 package. The MSCSICSP6/REF3 is designed for SiC in the all new, high performance SP6LI package, featuring ultra-low 2.9nH of stray inductance.
Part Number Outputs Device Voltage Peak Current Products FrequencyMSCSICMDD/REF1 2 700V/1200V 30A Universal 400kHz
MSCSICSP3/REF2 2 1200V 30A SP3 package 400kHz
MSCSICSP6/REF3 2 1200V 30A SP6LI Package 400kHz
MSCSICMDD/REF1 MSCSICSP3/REF2 MSCSICSP6/REF3
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High-speed Gate Drivers for GaN & SiC (cont.)
Isolated gate drivers provide electrical isolation as well as strong gate drive capability, which is often required for safety and robustness in many system architectures. The isolated gate driver portfolio from Analog Devices offers designers performance and reliability advantages over optocouplers or pulse transformers by utilizing ADI’s proven iCoupler® technology. The isolated gate driver family offers the advantage of a maximum propagation delay of 50 ns, less than 5 ns channel-to-channel matching, up to 150kV/use Common Mode Transient Immunity (CMTI), and output voltages to cover all SiC and GaN drive levels.
Part Number Outputs Max output Peak Current CMTI Miller Clamp UVLO
ADuM4120 1 35V 2A 150kV/usec No Yes
ADuM4121 1 35V 2A 150kV/usec Yes Yes
ADuM4135 1 30V 4A 100kV/usec No Yes
ADuM4136 1 35V 4A 100kV/usec No Yes
In addition to driving conventional Si-based power devices like IGBTs and MOSFETs, SCALE-2, SCALE-2+ gate driver cores and SCALE-iDriver gate driver ICs are also capable of driving SiC MOSFET power switches. However, SiC switches often require turn-on and turn-off voltage levels which are different from those required by Si-based devices. Application Note AN-1601 on the Power Integrations website outlines how to modify the devices below in order to provide correct drive levels and control of SiC based modules.
Part Number Outputs Device Voltage Max Output Peak Current CMTI Max Frequency
SID1182K 1 1200V 30V 8A 100kV/usec 250kHz
2SC0115T-12 2 1200V 30V 15A 50kV/usec 50kHz
2SC0435T-17 2 1700V 30V 35A 50kV/usec 100kHz
2SC0535T-17 2 1700V 30V 35A 50kV/usec 100kHz
2SC0635T-45 2 4500V 30V 35A 35kV/usec 100kHz
2SC0650P-17 2 1700V 30V 50A 100kV/usec 150kHz
1SC2060P-17 2 1700V 30V 60A 100kV/usec 500kHz
2SC0535T-17 2SC0115T-12 2SC0635T-45 1SC2060P-17 SID1182K 2SC0650P-17 2SC0435T-17
RECOM offers DC/DC converters designed for GaN and SiC gate drive applications. The modules are available with input voltages of 5, 12, 15, or 24VDC with two asymmetric outputs of +20V / -5V and +15V /-3V for SiC and single +6V output for GaN. The modules offer 3kVDC to 6.4kVDC isolation and operating temperature range of -40C to +100°C (with derating) to meet harsh environmental requirements.
Part Number Output Voltage Input Voltage Power Short Circuit Protect Iso Voltage
RPxx06S 6 5, 12, 15, 24 2W No 5.2kV
RKZxx2005D +20/-5 5, 12, 15, 24 2W Yes 3kV, 4kV
RxxP21503D +15/-3 12, 15, 24 1W Yes 6.4kV
RxxP22005D +20/-5 5, 12, 15, 24 2W Yes 6.4kV
RxxP22005DRPxx06S RxxP21503D RKZxx2005D
High Isolation DC-DC Converters for GaN & SiC Gate Driver Applications
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Ceramic Capacitors for Fast Switching GaN & SiC
TDK CeraLinkTM capacitors are a highly compact solution for the snubber and DC links of fast-switching converters based on SiC and GaN semiconductors. These capacitors are based on a PLZT ceramic material (lead lanthanum zirconate titanate). In contrast to conventional ceramic capacitors, CeraLinkTM capacitors have their maximum capacitance at the application voltage, and this even increases proportionately to the share of the ripple voltage. The capacitors are designed for an operating temp from -40°C to +125°C and can withstand brief exposures up to +150°C.
Part Number Cap Rated Voltage
Optimal Voltage
Peak Voltage Current 85ºC
100kHz
ESR 25ºC
1MHz
ESL Package
B58031I5105M062 1.0uF 500V 400V 650V 11.4A 12mΩ 2.5nH L-lead
B58031I7504M062 0.5uF 700V 600V 1000V 7.1A 29mΩ 2.5nH L-lead
B58031I9254M062 0.25uF 900V 800V 1300V 5.1A 45mΩ 2.5nH L-lead
B58031U5105M062 1.0uF 500V 400V 650V 11.4A 12mΩ 2.5nH J-lead
B58031U7504M062 0.5uF 700V 600V 1000V 7.1A 29mΩ 2.5nH J-lead
B58031U9254M062 0.25uF 900V 800V 1300V 5.1A 45mΩ 2.5nH J-lead
B58033I5206M001 20uF 500V 400V 650V 41.3A 3.5mΩ 3.5nH Solder-Pin
B58033I7106M001 10uF 700V 600V 1000V 32.6A 11mΩ 3.5nH Solder-Pin
B58033I9505M001 5uF 900V 800V 1300V 25.6A 18mΩ 3.5nH Solder-Pin
KEMET’s KC-LINKTM surface mount capacitors are designed to meet the growing demand for fast-switching wide bandgap (WBG) semiconductors that operate at higher voltages, temperatures, and frequencies. By utilizing KEMET’s robust and proprietary C0G/NPO base metal electrode (BME) dielectric system, these capacitors are well suited for power converters, inverters, snubbers, and resonators, where high efficiency is a primary concern. With extremely low effective series resistance (ESR) and very low thermal resistance, KC-LINKTM capacitors can operate at very high ripple currents with no change in capacitance versus DC voltage, and negligible change in capacitance over temperature of -55°C to 150°C. Available in AEC-Q200 automotive grade.
Part Number Capacitance Rated Voltage
Peak Voltage
Current (85ºC/100kHz)
ESR (25ºC/300kHz)
ESL Package
CKC33C224KCGAC 220nF 500V 750V 19.3A 4mΩ 1nH SMT
J-lead package L-lead package Solder Pin
Payton Planar offers standard and custom planar transformers for automotive, defense, industrial, medical, space & aviation, and telecom applications. Transformers made of the planar principle eliminate virtually all the shortcomings of old-fashioned wire wound types. In a planar design, the windings are made of copper foil lead frames or printed circuit boards. (Flat copper spirals laminated into thin dielectric substrates). These windings are then sandwiched, along with appropriate insulators, between large area, yet thin, state-of-the-art ferrite cores. This construction technique yields a host of benefits including high power density, high efficiency, good thermal conduction, low profile, low leakage inductance and high repeatability.
Power Operating Frequency Peak Operating Voltage RMS Current Typical Efficiency
5W - 150kW 50kHz - 5MHz Up to 1500V mA - 1000A+ 97% - 99%
Transformers Optimized for GaN & SiC
Size 250 Size 5000 Size 551 Size 80
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ATS High-Performance Cold Plates According to research published by SatCon1, The University of Kiel2 and Wolfspeed3, direct liquid cooling via cold plates is an effective way to cool SiC Power Modules. ATS cold plates have more than 30% better performance compared to other commercially-available cold plates. An internal, mini-channel fin structure enhances the surface area to maximize heat transfer with low pressure drop characteristics and provides uniform cold plate surface temperature. ATS cold plates can be quickly customized to fit different mounting configurations.
Part Number Dimensions (L x W x H) Flow Rate (L/min) ΔT @ 1kW between the cold plate base and inlet fluid temperature
ATS-CP-1000 202 x 130 x 20mm 4 L/min 5.50°C
ATS-CP-1001 198 x 147 x 20mm 4 L/min 5.00°C
ATS-CP-1002 162 x 136 x 20mm 4 L/min 7.00°C
ATS-CP-1003 162 x 147 x 20mm 4 L/min 6.80°C
ATS-CP-1004 162 x 172 x 20mm 4 L/min 5.90°C
Thermal Management
(1) Leo Casey, Bogdan Borowy, and Gregg Davis, “High Power Silicon Carbide Inveter Design – 100kW Grid Connect Blocks” (2005, presented at Sandia National Labs)(2) M. Andresen, M. Liserre, “Impact of Active Thermal Management on Power Electronics Design” (2014, University of Kiel, published in Science Direct)(3) Brian McPherson, Brad McGee, David Simco “Direct Liquid Cooling of High Performance Silicon Carbide (SiC) Power Modules” (2017, Wolfspeed Inc., presented at 2017 IWIPP)
SiC and GaN Power Semiconductors deliver greater efficiency while operating at much higher frequencies than regular Si semiconductors. Power magnetics used in these designs must be able to handle high current and fast-switching speeds that can exceed 1MHz. Eaton FP and HC series are designed to deliver high power density by using high frequency core materials, which can significantly improve system efficiency.
Series Frequency RMS Current Inductance DC Resistance
FP 1kHz - 2MHz 13A -110A 22nH – 950nH 0.05 mΩ - 0.65mΩ
HC 1kHz – 1MHz 11A – 78A 0.047uH – 10.5uH 0.24mΩ - 8.7mΩ
Inductors for High Frequency Power Applications
HC SeriesFP Series
Standard and Custom Thermal SolutionsWakefield-Vette designs and manufactures a wide array of thermal management products, including extrusions, LED heat sinks, heat frames, heat pipes, fan assemblies, heat exchangers, coolant distribution units and liquid cold plates. This means Wakefield-Vette has the most complete thermal solution toolbox to solve customers’ heat density challenges. Standard and custom products are available to fit any need. Richardson RFPD stocks many standard extrusion profiles as well as rolled tube, exposed tube and full buried tube cold plates.
ExtrusionsBonded Fin Heat Pipes AssembliesCold Plates
607 Series
219 Series
218 Series
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GaN-on-Si E-HEMT Evaluation Platforms and Reference Designs
Part Number: GS61004B-EVBCD Class D amp using GS61004B 100V, 15mΩ andpSemi PE29102 high speed gate driver.
Part Number: GS665MB-EVB 650V universal motherboard for GS665XXX-EVBDB.
Part Number: GS66508B-EVBDB11.5kW Half bridge daughter board.Part Number: GS66508T-EVBDB2 2kW Half bridge daughter board.Part Number: GS66516T-EVBDB2 2.5kW Half bridge daughter board.
Part Number: GS61008P-EVBHF Half bridge using GS61008P 100V, 7mΩ andpSemi PE29101 high speed gate driver.
Part Number: GS665BTP-REF 3kW High 99% efficiency bridgeless totem pole PFC using GS66516T 650V, 25mΩ. Vin: 176 - 264Vrms • Vout: 400VDC
Part Number: GSP65R25HB-EVB 1-3kW half bridge IMS using GS66516B 650V, 25mΩ.
SiC Evaluation Platforms and Reference Designs
Part Number: CRD-5FF0912P High-frequency, flexible half bridge configurationusing C3M0120090J.
Part Number: CRD-50DD12N 50kW 4-phase interleaved boost using C2M0080120D.Vin: 400 – 600VDC • Vout: 800VDC
Part Number: CRD8DD12P 8kW ZVS, LLC Full bridge using C2M0160120D. Vin: 650 - 750VDC • Vout: 270VDC
Part Number: KIT8020-CRD-8FF1217P-1 Half bridge eval kit using C2M0080120D.
Part Number: CRD-060DD17P-2 48W Aux power supply using C2M1000170J. Vin: 300 – 1000VDC • Vout : 12VDC/4A, 12VDC/0.1A
Part Number: KIT8020-CRD-5FF0917P-2 Half bridge eval board using C3M0075120K.
Part Number: CRD-20DD09P-2 20kW full bridge resonant LLC using C3M0065100K. Vin: 650 - 750VDC • Vout: 300 - 550VDC • Iout : 35A
Part Number: CRD-060DD12P 60W aux supply using C2M1000170D.Vin: 200 – 1000VDC Vout: 12VDC/4.5A, 5VDC/0.5A, -12VDC/0.25A
Part Number: CRD-02AD09N 2.2kW, 98.5% efficiency Bridgeless Totem Pole PFC using C3M0065090J. Vin: 180 - 264Vrms • Vout: 400VDC
Part Number: CRD-06600FF10N 6.6kW Bi-directional EV on-board charger. using C3M0065100K.Vin: 176 - 264Vrms • Vout: 400VDC
Part Number: CRD-15DD17P 15W wide input aux supply using C2M1000170J.Vin: 300 – 1200VDC or 480 – 530VAC • Vout: 12VDC
Part Number: GSP65R13HB-EVB 4-6kW half bridge IMS using 2x GS66516B 650V, 25mΩ (13mΩ).
Part Number: GSP65MB-EVB Motherboard for GSP65R13HB-EVB and GSP65R25HB-EVB.
Part Number: GSWP050WP-EVBPA50W Wireless Power Transfer (WPT) amp using GS61004B 100V, 15mΩ. Part Number: GSWP100WP-EVBPA 100W WPT amp using GS61008P 100V, 7mΩ.Part Number: GSWP300WP-EVBPA 300W WPT amp using GS66508P 650V, 50mΩ.
50W, 100W and 300W amps for wireless power transfer/charging applications. Push-pull class EF2 topology, operating at 6.78MHz, 90% peak efficiency.
Reference Design
Part Number: MSCSICPFC/REF5 For qualified opportunities. Reference design files only, no hardware.30kW Vienna PFC Reference Design using Microsemi Next Generation SiC diodes and MOSFETs.Vin: 380/400Vrms, 3-Phase • Vout: 780VDC 11
Part Number: CRD-60DD12N 60kW 4-phase interleaved boost using C3M0075120K.Vin: 470 – 800VDC • Vout: 850VDC
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Package Styles Dimensions in millimeters (mm)
62x108 (SP6P)
43x73 (SP3F)
62x108 (D3)
62x108 (SP6)
SOT-227 (Isotop)
41x52 (SP1)
62 x 108(SP6LI)
TO-220-2 TO-247-2D3PAK(TO-268)
TO-247
37x82 (Flow 1)
33x66 (Flow 0)
©2019 Richardson RFPD, Inc. All other product names and logos are trademarks of their respective manufacturers. Rev.6, FEB19 DOC-007R1
62x108 48x94
50x12067x131
80x110 SuperMini DIP
62x122
130x140
56x110
47x108 (Flow 2)
GS61004B(4.6 x 4.4)
GS61008P(7.0 x 4.0)
GS61008T(7.0 x 4.0)
GS66502B(5.0 x 6.6)
GS66504B(5.0 x 6.6)
GS66506T(5.6 x 4.5)
GS66508B(7.0 x 8.4)
GS66508P(10.0 x 8.7)
GS66516T(9.0 x 7.6)
GS-010-120-1-T (7.0 x 4.0)
GS66508T(6.9 x 4.5)
GS-065-120-1-D 1(12.7 x 5.6)
PDFN(5 x 6)
TO-252-2 (DPAK)
TO-263-2 (D2PAK)
TO-263-7L (7L D2PAK)
QFN 3.3 TO-247TO-220-F2 (Full Pack)
TO-247-2
62x108 (D3)
45x108 (EconoPACKTM 2)
65x110 (High Performance 65mm)
TO-220-2 and TO-220 Isolated
TO-247-4L
*Available only in NA.
TO-220-2L