Company Overview
May, 2004
GPD Optoelectronics CorporationGPD Optoelectronics Corporation
Outline
• Company Overview
• Products
• R & D
• “Tour”
• 1973 Founded (as Germanium Power Devices Corp.)
• 1980 Introduced Ge pn detector products
• 1993 Introduced InGaAs detector products
• 2000 Relocated to Salem, NH, doubling capacity
Company History
Company HeadquartersSalem, NH
Facilities
• 28,000 square feet includes:1,000 Square feet Class 1,000 Cleanroom
6,000 Square feet Class 10,000 Cleanroom
8,000 Square feet Manufacturing + Test
6,000 Square feet Offices
Products
• Germanium Detectors– p-i-n and p-n detectors
• Standard• Large area
– Two-Color detectors– Avalanche photo diodes
• InGaAs Detectors– Large area– High speed
Research & Development
• InGaAs avalanche photodiode
• High linearity, low-distortion InGaAs pin
• Low PDL detectors
• Cryogenic Ge diodes and transistors
• Cryogenic SiGe diodes and transistors
Company “Tour”
Photolithography
Photolithography
Etching
Deposition, Metallization
Optical Characterization
Wire Bond, Die Bond
Fiber Pigtailing
Cryogenic Measurement