HelioVolt Printed Electronics/PV USA Dec 2010

HelioVolt Confidential and Proprietary

CIGS Manufacturing Technology Matures: Perspective on ScalingB.J. Stanbery

Chief Scientist, Founder, and Chairman

Printed Electronics/Photovoltaics USA 2010

2 December 2010; Santa Clara, CA

NREL CRADA established

12% cell efficiency achieved

Series A funding

HelioVoltfounded

12% prototype moduleand 14% cell efficiency achieved

11% production module efficiency achieved

Exclusive NREL IP Agreement

Series B funding

Opened first factory in Austin, Texas

Industry veteran Jim Flanary joins as CEO

FASST® Process wins Nano50 Award

Wall Street Journal Technology Award

HelioVolt and NREL win R&D 100 Award

Time Magazine’s “Best Inventions of 2006”

2009 20102007200520032001 2006 2008

Printed Electronics Industry Award 1st production run

August 2009

Commercial agreements signed for 3 years of production

HelioVolt Corporate History

Printed Electronics/PV USA 2Dec 20102

Final Assembly& Test

ModuleFormation

FASST® CIGSProcess

GlassPreparation

Glass In

Module Out


HelioVolt Module Production Process

Our CIGS Products vs. AlternativesOur Process

Glass In Module Out

GlassPreparation

FASST® CIGSProcess

ModuleFormation


Competitors’ CIGS Cell-Based Processes

Substrate In Module Out

SubstratePreparation

CIGSProcess

Contact & GridFormation

Cell Cut & Sort Cell Stringing

Silicon Process

Polysilicon Ingot Wafer Solar Cell Solar Module


Source: Wall Street research.


HelioVolt CIGS Thin-Film Products

• Alloy of Copper, Indium, Gallium and Selenium• Highest efficiency single-junction thin-film PV semiconductor material

– 20.3% conversion efficiency (ZSW)

• CIGS is one of three known intrinsically stable PV materials (with Silicon and Gallium Arsenide)

– Intrinsic stability required for long lived robust products

• More efficient absorber of light than any other known semiconductor• Requires 1/100th of the material compared to silicon for comparable

light absorption

Monolithic Interconnect Structure

substrate

Moly CIGS

ZnO bufferP2

P1

P3


Prototype Module

Scalability ProofDONE

Production Module

Commercial Production SizeNOW

Cell 14.0%

3.0%

3 Months

4.5%

12.0%

2 Months

2%

7.8%11.5%

10 Months

Product Scaling and Performance Experience

Cell

Prototype

Module Progress

1364x scale-up

8x scale-up

Effic

ienc

yEf

ficie

ncy

Effic

ienc

y4 Months


2010 Module Efficiency Progress

0%

10%

20%

30%

40%

50%

60%

70%

80%

90%

100%

110%

120%

0%

1%

2%

3%

4%

5%

6%

7%

8%

9%

10%

11%

12%

MAY JUN JUL AUG SEP OCT NOV

Coef

ficie

nt o

f Var

iati

on (

CV)

Ave

rage

Eff

icie

ncy

2010

Max

EquipmentCapability Upgrade

andCharacterization

CV

Std DevAverage

CV =

Efficiency: average, maximum, and distribution improved significantly month-to-month


11.5% Champion Module Efficiency

75 Watts

11.5%

75 W


Pre-Certification Reliability Tests Complete• Most recent modules

underwent Damp Heat (DH) and Humidity Freeze (HF) testing for pre-certification reliability screening.

• DH Modules followed IEC protocol 1000 hours at 85°C; 85% relative humidity.

• Humidity Freeze– Half of the modules followed

IEC protocol for HF test alone.

– Half of the modules were tested per IEC protocol with 1000Hrs DH, then 1000Hrs HF.

• No loss of power, Voc, Isc in any screening tests.


HelioVolt Module Rooftop Test ArrayPhotograph of Factory Rooftop HelioVolt module test array. Array tracks performance of HelioVolt, as well as, other thin-film and silicon modules, and inverters


Multiple Proven Ways to Win

• First generation players have proven market and value creation

• Opportunity for technology innovation to trump incumbents on both cost and performance

22%

14%

6%

$2.00/w $1.00/w $0.50/w

Mod

ule

Effic

ienc

y

Module Cost

Low Margin Manufacturers

Next Gen InnovationPerformance Leader

$9.2B

$1.7B$1.2B

$1.2B

High Margin Manufacturers

$1.4B

Note: Market cap as of June 1, 2010.Source: Wall Street research.


• Development work based on HelioVolt patents and trade secrets will drive module efficiency from 10% to 16%

• Applied Research – HelioVolt’s partnership with NREL will drive module efficiency from 16% to 21%

6%

12%

18%

0%2010 2011 2012 2013

Baseline Process

Active Quenching,Advanced

Composition Grading Control

Ultrafast Heating,Predictive Design

Advanced TCO,Enhanced

Transmission,Light Trapping

Roadmap to 16% Module Efficiency


MOTIVATION FOR ALTERNATIVE APPROACH TO CIGS PROCESSING




Characteristics of an Ideal CIGS Manufacturing Method• High device-quality material

– Ability to create intrinsic defect structures limiting recombination; role of the order-disorder transition?

– Ability to control Group III and VI composition gradients– Control of extrinsic doping (e.g.: sodium)

• High processing rate– Reduces capital cost for targeted throughput

• Low thermal budget– Reduces operating cost and energy payback time

• High materials utilization– Reduced materials consumption and recycling expenses


Synopsis of Prior Art for CIGS Synthesis:Co-evaporation

• First method to achieve 10% efficiency and research approach used to make all record cells since 1989

• Simultaneous evaporation of the constituent elements onto a high-temperature (450-700°C) substrate to directly synthesize CIGS in a single stage process

• Competition between adsorption and desorption kinetics reduces (1) selenium utilization and (2) indium incorporation at temperatures near/above the order-disorder transition

• Extended dwell at high temperatures generates high thermal budget and equipment costs


Synopsis of Prior Art for CIGS Synthesis:Metal Precursor Selenization

• Most well-developed, widely used approach for commercial manufacture of CIGS modules, providing good large-area uniformity

• Deposition of multilayer metal films by PVD, plating, or particle suspensions followed by second-stage high-temperature annealing in Se or H2Se/H2S

• Complex intermetallic alloying reactions and differential diffusion during selenization cause uncontrolled segregation

• Selenium/Sulfur diffusion limits reaction rate and resulting extended dwell at high temperature generates high thermal budget; first stage deposition method determines materials utilization efficiency and capital intensity


Synopsis of Prior Art for CIGS Synthesis:Oxide Precursor Selenization

• High-speed printing of copper indium gallium oxide nanoparticle ink onto a metal foil substrate, subsequently annealed at high temperature in H2Se/H2S to convert the oxide into sulfo-selenide– Enables excellent materials utilization

• Reduced diffusion lengths of chalcogens in nanoparticles speeds displacement reaction

• Difficult recrystallization kinetics limit film densification and large grain growth

• Composition gradient control challenging


Synopsis of Prior Art for CIGS Synthesis:Stacked Elemental Layers (SEL)

• Differs from the metal selenization approaches by incorporating layers of selenium, as well as the metals, into the precursor film itself– Circumvent the need to diffuse selenium through the

entire thickness of the precursor stack– Enables intervention in intermetallic formation by

stacking sequence control– Multi-step reaction kinetics shown to generate

compound intermediates prior to CIGS formation• Rapid thermal processing used in second stage to

minimize thermal budget and parasitic reactions


REACTIVE TRANSFER PROCESSING




Reactive Transfer Processing of Compound Precursors

• Two-stage process– Low-temperature

deposition of multilayer compound precursor films

– RTP reaction of compound precursorsto form CIGS

112

Cu In, Ga

Se, S

247247

112 = Cu(In,Ga)(Se,S)2247 = Cu2(In,Ga)4(Se,S)7

CuSe.Cu2Se.

Cu2Se3. .(In,Ga)2(Se,S)3

.(In,Ga)4(Se,S)3

Intermetallic Plethora

.(In,Ga) (Se,S)


FASST® Reactive Transfer ProcessingNon-Contact Transfer (NCT™) Synthesis

Source Plate

SubstrateCIGS Layer

Heat

Source Plate with Transfer FilmPressure

Substrate

Cu, In, Ga, Se

Process Step

• Independent deposition of distinct compound precursor layers on substrate and source plate

• Rapid non-contact reaction– Turns stack into CIGS with high efficiency grains– Combines benefits of sequential selenization

with Close-Spaced Vapor Transport (CSVT) for junction optimization

• CIGS adheres to the substrate and the source plate is reused

A rapid manufacturing process reduces depreciation of capital


Recrystallization of Nanoscale Vacuum Precursor Films Forming Large Grain CIGS

Precursor Film FASST® CIGS cross-section

© 2009 HelioVolt Corporation


Reactive Transfer Processing Compound Precursor Deposition• Two methods have been developed for

deposition of compound precursors– Low-temperature Co-evaporation

• Equipment requirements similar to conventional single-stage co-evaporation but lower temperatures lead to higher throughput and reduced thermal budget

– Liquid Metal-Organic molecular solutions• Proprietary inks developed under NREL CRADA• Decomposition of inks leads to formation of inorganic

compound precursor films nearly indistinguishable from co-evaporated films (for some compounds)


Cross Section Cross Section

Co-evaporatedCIGS Precursor

Film

Spray Deposited

CIGS Precursor Film

Top View Top View

MOD Comparison with Vacuum Precursor Deposition Method


Metal-Organic Decomposition (MOD) Precursor Film Deposition• Inorganic compound reaction CIGS synthesis provides

pathway for evolutionary adoption of MOD precursors• Key drivers

– Low capital equipment cost– Low thermal budget– High throughput

• Flexibility– Good compositional control by chemical synthesis– Variety of Cu-, In- and Ga-containing inks can be synthesized

and densified to form multinary sulfo-selenide precursors• Efficient use of materials


SEM

NREL CRADA – Hybrid CIGS by FASST®

Chalcopyrite CIGS (& Mo) (220/204) preferred orientation

achieved Exceptionally large grains Columnar structure

XRD


Device Quality CIGS in 30 Seconds: First Ultra-Fast Heating Results


HelioVolt Highlights• Disruptive CIGS technology• Extensive CIGS intellectual property portfolio• 9+ years and ~$145mm of R&D• Unique technology commercialization partnership with

NREL• Full-scale R&D line in Austin• Deep technical team• Technical Accomplishments – 11.5% efficiency champion

production module with >10.5% average efficiency• Efficiency roadmap to 16%+ by 2014• Plan for production expansion under development


HelioVolt Confidential and Proprietary

Thank you!

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HelioVolt Printed Electronics/PV USA Dec 2010

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