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FN8274 Rev.0.00 Page 1 of 12 May 3, 2012 FN8274 Rev.0.00 May 3, 2012 HI-5046A/883 DPDT CMOS Analog Switch DATASHEET This CMOS analog switch offers low-resistance switching performance for analog voltages up to the supply rails and for signal currents up to 70mA. “ON” resistance is low and stays reasonably constant over the full range of operating signal voltage and current. R ON remains exceptionally constant for input voltages between +5V and -5V and currents up to 50mA. Switch impedance also changes very little over temperature, particularly between 0°C and +75°C. R ON is nominally 25Ω for the HI-5046A/883. This device provides break-before-make switching and is TTL and CMOS compatible for maximum application versatility. Performance is further enhanced by Dielectric Isolation processing which insures latch-free operation with very low input and output leakage currents (0.8nA at +25°C). The HI-5046A/883 also features very low power operation (1.5mW at +25°C). The HI-5046A/883 is available in a 16 Ld CerDIP package and is specified over the temperature range of -55°C to +125°C. Features This Circuit is Processed in Accordance to MIL-STD-883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. Wide Analog Signal Range . . . . . . . . . . . . . . . . . . . . . . . . ±15V Low “On” Resistance . . . . . . . . . . . . . . 25Ω (Typ), 50Ω (Max) High Current Capability . . . . . . . . . . . . . . . . . . . . . 70mA (Max) Break-Before-Make Switching - Turn-On Time. . . . . . . . . . . . . . . . . 370ns (Typ), 800ns (Max) - Turn-Off Time . . . . . . . . . . . . . . . . 280ns (Typ), 400ns (Max) No Latch Up Input MOS Gates are Protected from Electrostatic Discharge DTL, TTL, CMOS, PMOS Compatible Applications High Frequency Analog Sample and Hold Digital Filters Operational Amplifier Gain Switching Functional Diagram LOGIC “1” INPUT NOTE: Source and Drain are arbitrarily depicted as Analog Input and Output, respectively. They may be interchanged without affecting performance. Pin Configuration HI1-5046/883 (16 LD CERDIP) TOP VIEW LOGIC “0” INPUT NOTE: Unused pins may be internally connected. Ground all unused pins. Ordering Information PART NUMBER PART MARKING TEMP. RANGE (°C) PACKAGE PKG. DWG. # HI1-5046A/883 HI1-5046A/883 -55 to +125 16 Ld CerDIP F16.3 14 15 16 9 13 12 11 10 1 2 3 4 5 7 6 8 V- V+ D 2 D 1 S 1 S 2 S 4 D 4 D 3 V L V R A S 3 S N A P D 12 11 13 14 15 3 4 1 16 8 9 6 5 D 1 D 2 D 4 D 3 S 1 S 3 S 4 S 2 A V- V R V+ V L TYPICAL SWITCH
Transcript
Page 1: HI-5046A/883 Datasheet - Renesas

FN8274Rev.0.00

May 3, 2012

HI-5046A/883DPDT CMOS Analog Switch

DATASHEET

This CMOS analog switch offers low-resistance switching performance for analog voltages up to the supply rails and for signal currents up to 70mA. “ON” resistance is low and stays reasonably constant over the full range of operating signal voltage and current. RON remains exceptionally constant for input voltages between +5V and -5V and currents up to 50mA. Switch impedance also changes very little over temperature, particularly between 0°C and +75°C. RON is nominally 25Ω for the HI-5046A/883.

This device provides break-before-make switching and is TTL and CMOS compatible for maximum application versatility. Performance is further enhanced by Dielectric Isolation processing which insures latch-free operation with very low input and output leakage currents (0.8nA at +25°C). The HI-5046A/883 also features very low power operation (1.5mW at +25°C). The HI-5046A/883 is available in a 16 Ld CerDIP package and is specified over the temperature range of -55°C to +125°C.

Features• This Circuit is Processed in Accordance to MIL-STD-883 and

is Fully Conformant Under the Provisions of Paragraph 1.2.1.

• Wide Analog Signal Range . . . . . . . . . . . . . . . . . . . . . . . . ±15V

• Low “On” Resistance . . . . . . . . . . . . . . 25Ω (Typ), 50Ω (Max)

• High Current Capability . . . . . . . . . . . . . . . . . . . . . 70mA (Max)

• Break-Before-Make Switching

- Turn-On Time. . . . . . . . . . . . . . . . .370ns (Typ), 800ns (Max)

- Turn-Off Time . . . . . . . . . . . . . . . .280ns (Typ), 400ns (Max)

• No Latch Up

• Input MOS Gates are Protected from Electrostatic Discharge

• DTL, TTL, CMOS, PMOS Compatible

Applications• High Frequency Analog

• Sample and Hold

• Digital Filters

• Operational Amplifier Gain Switching

Functional DiagramLOGIC “1” INPUT

NOTE: Source and Drain are arbitrarily depicted as Analog Input and Output, respectively. They may be interchanged without affecting performance.

Pin ConfigurationHI1-5046/883(16 LD CERDIP)

TOP VIEW

LOGIC “0” INPUT

NOTE: Unused pins may be internally connected. Ground all unused pins.

Ordering Information

PART NUMBERPART

MARKINGTEMP. RANGE

(°C) PACKAGEPKG.

DWG. #

HI1-5046A/883 HI1-5046A/883 -55 to +125 16 Ld CerDIP F16.3

14

15

16

9

13

12

11

10

1

2

3

4

5

7

6

8

V-

V+

D2

D1

S1

S2

S4

D4

D3

VL

VR

A

S3

S

NA P

D

12 11

13 14

15

34

116

89

65

D1

D2

D4

D3

S1

S3

S4

S2

A

V-VR

V+VL

TYPICAL SWITCH

FN8274 Rev.0.00 Page 1 of 12May 3, 2012

Page 2: HI-5046A/883 Datasheet - Renesas

HI-5046A/883

Absolute Maximum Ratings Thermal InformationVoltage Between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . . . . . . . . . 36VVSUPPLY to Ground (V+, V-) 18VVR to Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -VSUPPLYVL to Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +VSUPPLYDigital and Analog Input Voltage (VA, VS, VD) . . . . . . . . . . . . +VSUPPLY +4V

-VSUPPLY -4VPeak Current (Source to Drain)

(Pulse at 1ms, 10% Duty Cycle Max) . . . . . . . . . . . . . . . . . . . . . . . . 70mAContinuous Current Any Pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mAESD Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .<2000V

Thermal Resistance JA (°C/W) JC (°C/W)CerDIP Package . . . . . . . . . . . . . . . . . . . . . . 82 20

Package Power Dissipation at +75°CCerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W

Package Power Dissipation Derating Factor above +75°CCerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12.3mW/°C

Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+175°CStorage Temperature Range. . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°CLead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . . . . . . . .+300°C

Recommended Operating ConditionsOperating Temperature Range . . . . . . . . . . . . . . . . . . . . . .-55°C to +125°COperating Supply Voltage Range15VLogic Supply Voltage (VL). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +5.0VLogic Reference Voltage (VR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.0VAnalog Input Voltage (VS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VSUPPLYAddress Low Level (VAL) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0V to 0.8VAddress High Level (VAH) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4V to 5.0V

CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact productreliability and result in failures not covered by warranty.

TABLE 1. D.C. ELECTRICAL PERFORMANCE SPECIFICATIONSDevice Tested at: Supply Voltage = 15V, VL = +5.0V, VR = 0.0V, VAH = 2.4V, VAL = +0.8V, unused pins are grounded, unless otherwise specified.

D.C. PARAMETERS SYMBOL CONDITIONSGROUP A

SUBGROUPSTEMPERATURE

(°C) MIN MAX UNITS

Switch “ON” Resistance RDS2 VD = -10V, IS = 10mAS1/S2/S3/S4

1 +25 - 45 Ω

2, 3 -55 to +125 - 50 Ω

VD = 10V, IS = -10mAS1/S2/S3/S4

1 +25 - 45 Ω

2, 3 -55 to +125 - 50 Ω

Source “OFF”Leakage Current

IS(OFF) VS = -10V, VD = 10VS1/S2/S3/S4

1 +25 -1 1 nA

2, 3 -55 to +125 -100 100 nA

VS = 10V, VD = -10VS1/S2/S3/S4

1 +25 -1 1 nA

2, 3 -55 to +125 -100 100 nA

Drain “OFF”Leakage Current

ID(OFF) VD = -10V, VS = 10VS1/S2/S3/S4

1 +25 -1 1 nA

2, 3 -55 to +125 -100 100 nA

VD = 10V, VS = -10VS1/S2/S3/S4

1 +25 -1 1 nA

2, 3 -55 to +125 -100 100 nA

Channel “ON”Leakage Current

ID(ON) VD = VS = 10V S1/S2/S3/S4

1 +25 -2 2 nA

2, 3 -55 to +125 -200 200 nA

VD = VS = -10V S1/S2/S3/S4

1 +25 -2 2 nA

2, 3 -55 to +125 -200 200 nA

Low Level Address Current IAL VA = 0V 1 +25 -1 1 µA

2, 3 -55 to +125 -10 1 µA

High Level Address Current IAH VA = 2.4V, 5V 1 +25 -1 1 µA

2, 3 -55 to +125 -1 10 µA

Positive Supply Current +ICC VA = 0V, 5V 1 +25 - 200 µA

2, 3 -55 to +125 - 300 µA

Negative Supply Current -ICC VA = 0V, 5V 1 +25 -200 - µA

2, 3 -55 to +125 -300 - µA

FN8274 Rev.0.00 Page 2 of 12May 3, 2012

Page 3: HI-5046A/883 Datasheet - Renesas

HI-5046A/883

Logic Supply Current +IL VA = 0V, 5V 1 +25 - 200 µA

2, 3 -55 to +125 - 300 µA

Reference Supply Current +IR VA = 0V, 5V 1 +25 -200 - µA

2, 3 -55 to +125 -300 - µA

TABLE 1. D.C. ELECTRICAL PERFORMANCE SPECIFICATIONS (Continued)Device Tested at: Supply Voltage = 15V, VL = +5.0V, VR = 0.0V, VAH = 2.4V, VAL = +0.8V, unused pins are grounded, unless otherwise specified.

D.C. PARAMETERS SYMBOL CONDITIONSGROUP A

SUBGROUPSTEMPERATURE

(°C) MIN MAX UNITS

TABLE 2. A.C. ELECTRICAL PERFORMANCE SPECIFICATIONSDevice Tested at: Supply Voltage = 15V, VL = 5.0V, VR = 0.0V, VAH = +5.0V, VAL = +0.0V, unused pins are grounded, unless otherwise specified.

PARAMETERS SYMBOL CONDITIONSGROUP A

SUBGROUPSTEMPERATURE

(°C) MIN MAX UNITS

Turn “ON” Time t(ON) VS = 10V, -10VCL

= 10pFRL

= 1kΩ

11 -55 - 450 ns

9 +25 - 500 ns

10 +125 - 800 ns

Turn “OFF” Time t(OFF) VS = 10V, -10VCL

= 10pFRL

= 1kΩ

11 -55 - 350 ns

9 +25 - 450 ns

10 +125 - 600 ns

TABLE 3. ELECTRICAL PERFORMANCE SPECIFICATIONS (NOTE 1)Device Characterized at: VSUPPLY = 15V, VSUPPLY = 15V, GND = 0V

PARAMETERS SYMBOL CONDITIONS NOTETEMPERATURE

(°C) MIN MAX UNITS

“ON” Resistance Match (Channel to Channel)

rON2 Match VD = ±10VID = 10mA

1 +25 - 10 Ω

Address Capacitance CA VA = 0V, 5V 1 +25 - 45 pF

Switch Input Capacitance CS (OFF) Switch Off: VA = 0V 1 +25 - 60 pF

Switch Output Capacitance CD (OFF) Switch Off: VA = 0V 1 +25 - 60 pF

CD (ON) Switch On: VA = 5V 1 +25 - 60 pF

Drain to Source Capacitance CDS (OFF) Switch Off: VA = 0V 1 +25 - 10 pF

Off Isolation VISO VS = 2VP-P @ f = 100kHz, RL = 100Ω

1 +25 1 60 dB

Crosstalk VCT VS = 2VP-P @ f = 100kHz, RL = 100Ω

1 +25 1 60 dB

Charge Transfer Error VCTE VS = GND, CL = 0.01µFVA = 0V to 4V @ f = 200kHz

1 +25 - 30 mV

NOTE:1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These parameters are lab

characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization based upon data from multiple production runs which reflect lot to lot and within lot variation.

TABLE 4. ELECTRICAL TEST REQUIREMENTS

MIL-STD-883 TEST REQUIREMENTS SUBGROUPS (Tables 1 and 2)

Interim Electrical Parameters (Pre Burn-in) 1

Final Electrical Test Parameters 1 (Note 2), 2, 3, 9, 10, 11

Group A Test Requirements 1, 2, 3, 9, 10, 11

Groups C & D Endpoints 1

NOTE:2. PDA applies to Subgroup 1 only.

FN8274 Rev.0.00 Page 3 of 12May 3, 2012

Page 4: HI-5046A/883 Datasheet - Renesas

HI-5046A/883

Test Circuits

FIGURE 1. RDS FIGURE 2. IS(OFF)

FIGURE 3. ID(OFF) FIGURE 4. ID(ON)

FIGURE 5. ADDRESS CURRENTS FIGURE 6. SUPPLY CURRENTS

IN OUT

10mA

V2RON =10mA

V2

±10V

IN OUTAA

±10V

ID(OFF)IS(OFF)

±10V

IN OUTAA

±10V

ID(OFF)IS(OFF)

±10V

IN OUT

A

±10V

ID(ON)

+VCC

OUT

-VCCGND

IN

IA

VA

GND

+ICC

+VCC

OUTIN

VA

-ICC

-VCC

FN8274 Rev.0.00 Page 4 of 12May 3, 2012

Page 5: HI-5046A/883 Datasheet - Renesas

HI-5046A/883

FIGURE 7. OFF ISOLATION

NOTE: Applies only to dual or double throw switches.

FIGURE 8. CROSSTALK

NOTE: VCTE may be a positive or negative value.

FIGURE 9. CHARGE TRANSFER

Test Circuits (Continued)

50ΩRL

VOUTVIN

2VP-P

IN OUT

OFF ISOLATION 20 LogVIN

VOUT----------------

=

50Ω

RL

RLVOUT

VIN2VP-P

SWITCHEDCHANNEL

CROSSTALK 20 LogVIN

VOUT----------------

=

DTO MEASUREMENT

S CIRCUITRY WITH INPUTRESISTANCE OF 1MΩ OR GREATER0.01MF

DRIVERf = 200kHzSQUARE WAVEtR ≤ 20ns

IF PULSE TEST IS USED:tR, tF ≤ 20ns

VIN (DRIVER)

VCTE DROOP CAUSED BYDEVICE LEAKAGEAND MEASUREMENTCIRCUITRY

SWITCHING TRANSIENT

Test Characteristics

FIGURE 10. ON/OFF SWITCH TIME (tON, tOFF)

90% 90%

tOFFtON

tON tOFF

90%90%

VA

OUT 1

OUT 2

VAH

+10V

IN1

IN2

VA

1k 1k

FN8274 Rev.0.00 Page 5 of 12May 3, 2012

Page 6: HI-5046A/883 Datasheet - Renesas

HI-5046A/883

FIGURE 11. SWITCHING TIMES FOR DIGITAL TRANSITION FIGURE 12. SWITCHING TIMES FOR NEGATIVE DIGITAL TRANSITION

Test Characteristics (Continued)

DIGITAL “HIGH” (VAH)

2.4 3.0 3.6 4.2 4.8

720

660

600

540

480

420

360

300

240

180

120

60

tON

tOFF

DIGITAL “LOW” (VAL)

0 0.5 1.0 1.5

720

660

600

540

480

420

360

300

240

180

120

60

tON

tOFF

Test Waveforms

Vertical Scale: Input = 5V/Div, (TTL; VAH = 5V, VAL = 0V)Output = 5V/Div

Horizontal Scale: 100ns/Div

FIGURE 13.

Vertical Scale: Input = 5V/Div, (CMOS; VAH = 10V, VAL = 0V)Output = 5V/Div

Horizontal Scale: 100ns/Div

FIGURE 14.

5V

5V 100ns

INPUT

OUTPUT

5V

5V 100ns

INPUT

OUTPUT

FN8274 Rev.0.00 Page 6 of 12May 3, 2012

Page 7: HI-5046A/883 Datasheet - Renesas

HI-5046A/883

Burn-In CircuitHI-5046A/883 CERAMIC DIP

NOTES:

R1 thru R4 = 10kΩ,±5%, 1/4W (Min)C1, C2, C3 = 0.01µF/Socket (Min) or 0.1µF/Row, (Min)D1, D2, D3 = 1N4002 or Equivalent/BoardVL = 5.5V ±0.5VA2 = A2 = 5.5V ±0.5V|(V+) - (V-)| = 30V

14

15

16

9

13

12

11

10

1

2

3

4

5

7

6

8

V-

R1

D1C1

VA

D2C2VL

V+D3C3

R4

R2

R3

S1

A1

VR

VL

A2

S2

V+

V-

D1

D2

D3

S3

S4

D4

FN8274 Rev.0.00 Page 7 of 12May 3, 2012

Page 8: HI-5046A/883 Datasheet - Renesas

HI-5046A/883

Schematic Diagrams

NOTE: Connect V+ to VL for minimizing power consumption when driving from CMOS circuits.

FIGURE 15. TTL/CMOS REFERENCE CIRCUIT FIGURE 16. SWITCH CELL

All N-Channel bodies to V-, all P-Channel bodies to V+, except as shown.

DIGITAL INPUT BUFFER AND LEVEL SHIFTER

TO (VR’)

VR

V-

V+ V+ R3

P2 N2

N1

N3

V-

P1

IN OUT

V+

A1 (A2)

A1 (A2)

N1

N2

P2

P1

P3

P5

P4

P6 P7 P8 P9 P10 P11 P12

A1

A2

N12N11N10N9N8N7N6

N5

N4

N3

V-

VL'

VR'

V+

V+

D2

D1

V-

AR4

200Ω

A1

A2

FN8274 Rev.0.00 Page 8 of 12May 3, 2012

Page 9: HI-5046A/883 Datasheet - Renesas

HI-5046A/883

Die CharacteristicsDIE DIMENSIONS:

96mils x 81mils x 19mils(2430µm x 2050µm x 480µm

METALLIZATION:Type: AluminumThickness: 16kÅ 2kÅ

GLASSIVATION:Type: Nitride over SiloxSilox Thickness: 12kÅ 2kÅNitride Thickness: 3.5kÅ 1kÅ

SUBSTRATE POTENTIAL (Powered-up): V-

DEVICE COUNT: 82

WORST CASE CURRENT DENSITY:1.0 x 105A/cm2 at 20mA

Metallization Mask LayoutHI-5046A/883

NOTE: Unused pins may be connected. Ground all unused pins.

V-

VR

VL

V+

D1

S1

S4

D4

D2 S2 A

S3D3

FN8274 Rev.0.00 Page 9 of 12May 3, 2012

Page 10: HI-5046A/883 Datasheet - Renesas

HI-5046A/883

Design Information The information contained in this section has been developed through characterization and is for use as application and design information only. No guarantee is implied.

Typical Performance Curves TA = +25°C, VSUPPLY = ±15V

FIGURE 17. ON RESISTANCE vs ANALOG SIGNAL LEVEL AND POWER SUPPLY VOLTAGE

FIGURE 18. NORMALIZED ON RESISTANCE vs TEMPERATURE

FIGURE 19. NORMALIZED ON RESISTANCE vs ANALOG CURRENT FIGURE 20. ON/OFF LEAKAGE CURRENTS vs TEMPERATURE

FIGURE 21. OFF ISOLATION vs FREQUENCY FIGURE 22. CROSSTALK vs FREQUENCY

ANALOG SIGNAL LEVEL (V)

ON

RE

SIS

TAN

CE

)

80

60

40

20

0-15 -10 -5 0 5 10 15

V+ = +10VV- = -10V

V+ = +12VV- = -12V

V+ = +15VV- = -15V

TEMPERATURE (°C)

-50 -25 0 75 100 12550250.6

1.2

1.1

1.0

0.9

0.8

0.7NO

RM

AL

IZE

D O

N R

ES

ISTA

NC

E(R

EF

ER

RE

D T

O +

25°C

)

VIN = 0V

ANALOG CURRENT (mA)

40 60 80200

1.4

NO

RM

AL

IZE

D O

N R

ES

ISTA

NC

E

1.3

1.2

1.1

1.0

(RE

FE

RR

ED

TO

1m

A)

ID(ON)

TEMPERATURE (°C)

75 100 1255025

IS(OFF) = ID(OFF)

100nA

10nA

1nA

100pA

10pA

LE

AK

AG

E C

UR

RE

NT

FREQUENCY (Hz)

10k 100k 1M1001

-200

OF

F I

SO

LA

TIO

N (

dB

)

-160

-120

-80

-40

1k10

RL = 100Ω

RL = 10kΩ

FREQUENCY (Hz)

200

160

120

80

40

10k 100k 1M1001 1k100

CR

OS

STA

LK

(d

B)

RL = 100Ω

RL = 10kΩ

RL = 1kΩ

FN8274 Rev.0.00 Page 10 of 12May 3, 2012

Page 11: HI-5046A/883 Datasheet - Renesas

HI-5046A/883

FIGURE 23. POWER CONSUMPTION vs FREQUENCY

Design Information The information contained in this section has been developed through characterization and is for use as application and design information only. No guarantee is implied.

Typical Performance Curves TA = +25°C, VSUPPLY = ±15V (Continued)

TOGGLE FREQUENCY (50% DUTY CYCLE) (Hz)

200

160

120

80

40

10k 100k 1M1k0

PO

WE

R C

ON

SU

MP

TIO

N (

mW

)

FN8274 Rev.0.00 Page 11 of 12May 3, 2012

Page 12: HI-5046A/883 Datasheet - Renesas

FN8274 Rev.0.00 Page 12 of 12May 3, 2012

HI-5046A/883

Intersil products are manufactured, assembled and tested utilizing ISO9001 quality systems as notedin the quality certifications found at www.intersil.com/en/support/qualandreliability.html

Intersil products are sold by description only. Intersil may modify the circuit design and/or specifications of products at any time without notice, provided that such modification does not, in Intersil's sole judgment, affect the form, fit or function of the product. Accordingly, the reader is cautioned to verify that datasheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see www.intersil.com

For additional products, see www.intersil.com/en/products.html

© Copyright Intersil Americas LLC 1989-2012. All Rights Reserved.All trademarks and registered trademarks are the property of their respective owners.

Ceramic Dual-In-Line Frit Seal Packages (CERDIP)

NOTES:

1. Index area: A notch or a pin one identification mark shall be locat-ed adjacent to pin one and shall be located within the shadedarea shown. The manufacturer’s identification shall not be usedas a pin one identification mark.

2. The maximum limits of lead dimensions b and c or M shall be measured at the centroid of the finished lead surfaces, whensolder dip or tin plate lead finish is applied.

3. Dimensions b1 and c1 apply to lead base metal only. Dimension M applies to lead plating and finish thickness.

4. Corner leads (1, N, N/2, and N/2+1) may be configured with a partial lead paddle. For this configuration dimension b3 replacesdimension b2.

5. This dimension allows for off-center lid, meniscus, and glass overrun.

6. Dimension Q shall be measured from the seating plane to the base plane.

7. Measure dimension S1 at all four corners.

8. N is the maximum number of terminal positions.

9. Dimensioning and tolerancing per ANSI Y14.5M - 1982.

10. Controlling dimension: INCH.

bbb C A - BS

c

Q

L

ASEATING

BASE

D

PLANE

PLANE

-D--A-

-C-

-B-

D

E

S1

b2

b

A

e

M

c1

b1

(c)

(b)

SECTION A-A

BASE

LEAD FINISH

METAL

eA/2

A

M

S S

ccc C A - BM DS S aaa C A - BM DS S

eA

F16.3 MIL-STD-1835 GDIP1-T16 (D-2, CONFIGURATION A)16 LEAD CERAMIC DUAL-IN-LINE FRIT SEAL PACKAGE

SYMBOL

INCHES MILLIMETERS

NOTESMIN MAX MIN MAX

A - 0.200 - 5.08 -

b 0.014 0.026 0.36 0.66 2

b1 0.014 0.023 0.36 0.58 3

b2 0.045 0.065 1.14 1.65 -

b3 0.023 0.045 0.58 1.14 4

c 0.008 0.018 0.20 0.46 2

c1 0.008 0.015 0.20 0.38 3

D - 0.840 - 21.34 5

E 0.220 0.310 5.59 7.87 5

e 0.100 BSC 2.54 BSC -

eA 0.300 BSC 7.62 BSC -

eA/2 0.150 BSC 3.81 BSC -

L 0.125 0.200 3.18 5.08 -

Q 0.015 0.060 0.38 1.52 6

S1 0.005 - 0.13 - 7

90o 105o 90o 105o -

aaa - 0.015 - 0.38 -

bbb - 0.030 - 0.76 -

ccc - 0.010 - 0.25 -

M - 0.0015 - 0.038 2, 3

N 16 16 8

Rev. 0 4/94


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