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High Mobility Ge-Channel

Formation By Localized/Selective

Liquid Phase Epitaxy (LPE) Using

Ge+B Plasma Ion Implantation

And Laser Melt Annealing

John Borland1, Shu Qin2, Peter Oesterlin3, Karim Huet4, Walt

Johnson5, Lauren Klein6, Gary Goodman6, Alan Wan6, Steven

Novak7, Thomas Murray7, Richard Matyi7, Abhijeet Joshi8 and Si

Prussin8

1J.O.B. Technologies & APIC, Honolulu, Hawaii, 2Micron Technology,

Boise, Idaho, 3Innovavent, Gottingen, Germany, 4Excico, Paris, France, 5KLA-Tencor, Milpitas, California, 6EAG, East Windsor, New Jersey,

7CNSE, Albany, New York, 8UCLA, Los Angles, California

IWJT-2013, June 6-7, 2013

Outline

• Introduction

• Experimentation

– Micron for Ge+B Plasma Implantation/Deposition Doping

– Innovavent/Germany for 515nm laser annealing

– Excico/France for 308nm laser annealing

• Results

– KT/Shanghai for Hx-4PP and TW analysis

– EAG/NJ for SIMS analysis

– CNSE/Albany for SIMS, XRD & X-TEM analysis

– UCLA differential Hall analysis for mobility and carrier

density depth profiles

• Summary2

Outline

• Introduction

– SiGe & Ge High Mobility Channel Formation Methods

• Experimentation

• Results

• Summary

3

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V. Moroz, ECS Oct 2010

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SSDM-2011: Apple iPhone 4Channel strain measurements in

32nm-node CMOSFETs Munehisa Takei1, Hiroki Hashiguchi1, Takuya Yamaguchi1, Daisuke Kosemura1,

Kohki Nagata1, 2, and Atsushi Ogura1

1School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku,

Kawasaki, 214-8571, Japan

Phone/Fax: +81-44-934-7324, E-mail: m_takei@ meiji.ac.jp

3.75GPa 850MPa

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Tensile Strain Compressive Strain

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200nm Ge Infusion Deposition

On Photo Resist4/23/04

Borland et al., J.O.B. Technologies & Epion, ECS

SiGe Sym., PV 2004-07, p. 769, Oct. 6, 2004

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Infusion Ge-Doping/Deposition (Increasing Dose)Medium Dose Increase Bss, High Dose Dose Controlled Deposition (DCD)

SiGe DCD

70nm Ge-DCD on 300mm bulk

& SOI wafer <0.45% uniformity

Borland et al., J.O.B. Technologies & Epion, ECS SiGe Sym., PV 2004-07, p. 769, Oct. 6, 2004

a-Ge

a-SiGe

c-Si

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0.9um Pixel CMOS Imager Sensor

Technology with Backside Illumination

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TSMC, IEDM-2010, paper 14.1

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LLM used for both c-Si and multi-Si Solar Cells!

13

Borland et al,

EU-PVSEC

2012

14

1E+17

1E+18

1E+19

1E+20

1E+21

1E+22

0 0.5 1 1.5 2 2.5 3 3.5

Co

ncen

trati

on

(A

tom

s/c

m3

)

Depth (µm)

11B=2.1E15/cm2

N=3.3E16/cm2

11B=2.4E15/cm2

N=3.9E16/cm2

11B=1.5E15/cm2

N=3.3E16/cm2

11B=1.8E15/cm2

N=6.2E16/cm2

N-8, #16, 6.5J/cm2

N-8, #10, 5J/cm2

N-8, #2, 3J/cm2

N-8, no anneal

D538p12_N8_0, 3, 5 & 6

80nm SiN/ARC+B-implant: Note Nitrogen Melt Profile!

S

i

N

Borland et al., EU-PVSEC 2012

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=805C

=932C

=1050C

=1147C

With KrF sees selective/localized Si-melt of amorphous region only!

IWJT-2011 S9-4 paper by Keio Univ/SEN/SHI on p+ USJ by non-melt

KrF(248nm) and Green (527nm) laser annealing.

Outline• Introduction

• Experimentation

– Ge+B Plasma Implantation/Deposition Doping

• Ge=3kV, 1E16/cm2 and 1e17/cm2 dose

• B=500V, 4E15/cm2 and 4E16/cm2 dose

– Laser Melt Annealing

• Innovavent 515nm laser

• Excico 308nm laser

• Results

• Summary

16

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Beam-line

Plasma

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#13, GEH3K1E16

(8.6sec) shows a ~20%

Ge peak near Si surface,

also shows a ~ 1.5nm

native SiO2/GeOx layer.

#15 (#2), GEH3K1E17

(66 sec) shows a ~55%

Ge peak near Si surface,

also shows a ~ 1.8nm

native SiO2/GeOx layer.

Micron Provided Wafers

Why not 200%?

Outline

• Introduction

• Experimentation

• Results

– 308nm Laser Anneal

– 515nm Laser Anneal

• Summary

19

Excico-Rs

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10

100

1000

10000

100000

1000000

10000000

0.00 0.50 1.00 1.50 2.00 2.50 3.00

BH500V/4E15

GE1E16+BH4E15

GE1E17+BH4E15

BH500V/4E16

Laser Power (J/cm2)

Rs

(ohms/sq)

Melt threshold by TRR

20% Ge

55% Ge

Excico-Therma-Wave (TW)

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100.00

1000.00

10000.00

100000.00

1000000.00

0.00 0.50 1.00 1.50 2.00 2.50 3.00

BH500V/4E15

GE1E16+BH4E15

GE1E17+BH4E15

BH500V/4E16

GEE17+BH4E16

Laser Power (J/cm2)

TW

Dopant Activation threshold?

Melt threshold by TRR!

a-Ge

Poly-Ge LPE-Ge

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0.0J/cm2 1.0J/cm2 2.5J/cm2

Surface

a-SiGe

EOR damage

Poly-SiGe

a-Ge

EOR damage

Surface

Strain-Ge

Surface

a-Ge

EOR damage

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0.0J/cm2

0.0001

0.001

0.01

0.1

1

10

100

1.00E+17

1.00E+18

1.00E+19

1.00E+20

1.00E+21

1.00E+22

1.00E+23

0 50 100 150 200 250

Ge A

rb u

nit

s

B, C

, O

Co

ncen

trati

on

(at/

cm

3)

Depth (nm)

12C

18O

11B+28Si

#REF!

28Si+74Ge

a-Ge

EOR (end-of-range) defects

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0.0001

0.001

0.01

0.1

1

10

100

1.00E+17

1.00E+18

1.00E+19

1.00E+20

1.00E+21

1.00E+22

1.00E+23

0 50 100 150 200 250

Ge A

rb.

Un

its

B, C

, O

Co

ncen

trati

on

(at/

cm

3)

Depth (nm)

12C

16O

11B+28Si

28Si+74Ge

1.0J/cm2

Ge=60%

O=5E20/cm3

C=3E20/cm3

B=3E19/cm3

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0.001

0.01

0.1

1

10

100

1.00E+17

1.00E+18

1.00E+19

1.00E+20

1.00E+21

1.00E+22

0 50 100 150 200 250

Ge

Arb

. U

nit

s

B, C

, O

Co

nc

en

tra

tio

n (

at/

cm

3)

Depth (nm)

12C

16O

11B+28Si

28Si+74Ge

2.5J/cm2

Ge=5-25%

C=1-3E19/cm3

B=8E18/cm3

O=2-5E18/cm3

0

10

20

30

40

50

60

70

80

90

100

110

120

130

140

150

160

170

0 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600

Mo

bilit

y (

cm

2V

-1s

-1)

Depth (Å)

Mobility JA14ED12-1

Drift

0

10

20

30

40

50

60

70

80

90

100

110

120

130

140

150

160

170

0 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600

Depth (Å)

Ge=1E17/cm2 + BH=4E16/cm2

Ge=1E16/cm2 + BH=4E15/cm2

>4x hole-mobility!

UCLA Hall Analysis of 308nmSlot#14:Ge=1E16+B=4E15

Slot#18: Ge=1E17+B=4E16

Ge=0%+BH=4E16/cm2

Excico (308nm) Ge-SIMS by CNSE

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0.1

1

10

100

0 20 40 60 80 100 120 140 160 180 200

Ge 2.5J

Ge 1.0J

Ge 0.5J

Ge 0.25J

Ge Concentration %

Depth (nm)

2.5J/cm2 Ge~5-40%

1.0J/cm2 Ge~40%

0.5J/cm2 Ge~60%0.25J/cm2 Ge~67%

28

480

1390

60

Ge=3900 (2.5x)

Ge=1900 (4x)

Si=39

55%Ge=160

0

100

200

300

400

500

600

700

800

900

1000

1100

1200

1300

1400

1500

1600

1700

1800

1900

2000

2100

2200

2300

0 0.5 1 1.5 2 2.5 3 3.5

308nm ExcicoMelt Depth (A)

Laser Power Level (J/cm2)

55% Ge

0%Ge

Innovavent-Therma-Wave (TW)

30

100.00

1000.00

10000.00

100000.00

1000000.00

0.00 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00

BH500V/4E15

GE1E16+BH4E15

GE1E17+BH4E15

BH500V/4E16

No Implant

TW

Laser Power (J/cm2)

55% Ge

20% Ge

0% Ge

0% Ge

0% Ge

Innovavent-Rs

31

10.00

100.00

1000.00

10000.00

0.00 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00

BH500V/4E15

GE1E16+BH4E15

GE1E17+BH4E15

BH500V/4E16

Laser Power (J/cm2)

Rs

(ohms/sq)

0% Ge

55% Ge

20% Ge

0% Ge

320.00001

0.0001

0.001

0.01

0.1

1

10

100

1E+15

1E+16

1E+17

1E+18

1E+19

1E+20

1E+21

1E+22

0 200 400 600 800 1000 1200

Ge

IN

TE

NS

ITY

(arb

itra

ry u

nits)

B C

ON

CE

NT

RA

TIO

N (

ato

ms/c

c)

DEPTH (Å)

B

BB

B

Ge->

Y0DHV503_yl_11Micronslot9DPAGM038MX03Unannealed(B)

0.0J/cm2: B=2E21/cm3=4.1E14/cm2, Xj~11nm

0.5J/cm2: B=8E20/cm3=2.2E14/cm2, Xj~12nm

1.0J/cm2: B=7E19/cm3=2.4E14/cm2, Xj~35nm

2.0J/cm2: B=2-3E19/cm3=3.3E14/cm2 Xj~105nm

Ge=3-6% <95nm

Ge=10-30% <22nm

Ge=45% <10nm

Ge=55% <3nm

Ge-Plasma channeling

B-channeling

Amorphous Ge-Plasma Implant

X-TEM

Boron Implant

33

1

10

100

1000

10000

1.E+13 1.E+14 1.E+15 1.E+16 1.E+17

Microwave 5min 750C 90min

850C 60min 1050C 10min

Laser Melt=3J Laser Melt=5J

Rs

(ohm

s/sq

)

Boron Dose (/cm2)

Plasma=B2H6

Plasma=BF3

1.0 J/cm2

2.0 J/cm2

1.0 J/cm2

2.5 J/cm2

0%Ge

308nm laser

515nm laser

B=8E13/cm2! B=3E14/cm2!

0

200

400

600

800

1000

1200

1400

1600

1800

2000

2200

2400

2600

2800

3000

3200

0 0.5 1 1.5 2 2.5 3

515nm InnovaventMelt Depth (A)

Laser Power Level (J/cm2)

0% Ge

55% Ge

Melt Depth (Xj-Angstrom)

TW or Rs

10

100

1000

10000

100000

1000000

0 200 400 600 800 1000 1200 1400 1600

308nm-TW 308nm-Rs 515nm-TW 515nm-Rs

515nm

B=8E13/cm2

B=3E14/cm2

Ge=1E17/cm2

B=4E15/cm2

Summary & What Next?:• High quality Ge-Epitaxy was achieved from 1e17/cm2

amorphous Ge-plasma implantation when using LPE (liquid

phase epitaxy) by both 308nm and 515nm laser melt annealing.

• This resulted in a 4x increase in surface hole-mobility.

– Try lower B dose <5E12/cm2 and look at electron mobility next.

• The 308nm laser melt annealing process achieved shallow

<10nm selective localized melting of amorphous-Ge and

amorphous-Si regions but showed higher Rs dopant activation.

– Why >3x lower B electrical activation or B retained dose? Loss of

surface Ge doping reported with Ge-RMG without surface cap!

• The 515nm laser melt annealing process showed lower Rs

dopant activation (higher B retained dose) but was not selective

to amorphous-Ge or amorphous-Si regions.

– Try longer pulse duration next.

• Next: Ge, SiGe & Si hole (B) and electron (P, As & Sb) mobility

– Ge beam-line implantation at 5E16/cm2 dose

– Ge-Epilayer on Si-bulk, SiGe-buffer and SOI wafers

36