High performance photod 1. OPTIMUS, Photonics Centre of E Technological University, 50 Nanyan 2. Centre for Disruptive Photonic Te 63737, Singapore Abstract Graphene and other 2D extraordinary electronic and optical applications such as photodetectio broadband photodetector, however group, nanostructured graphene (g the photoresponsivity of graphene based on photoconductive mode demonstrated the photovoltaic mo effective electron irradiation metho exhibit a high detectivity of ~ 3×10 10 On the other hand, metal d out-of-plane interactions open up Single crystal 1T phase Tin Diselen Atomically layered SnSe 2 field-effe time (~2 ms) in the visible range. F was also demonstrated as a promis and metal dichalcogenides. Figure 1. Photodetector based on (c) and few layer black phosphore detectors based on graphene and other 2 Xuechao Yu 1 , Qi Jie Wang 1,2 , Excellence, School of Electrical and Electronic Engin ang Avenue, 639798, Singapore echnologies, Nanyang Technological University, 21 N [email protected]materials have attracted tremendous attention properties, accommodating a large potential in mod on. Graphene is considered as a suitable candidat r, suffering from low light absorption and photore graphene quantum dots and nanoribbons) were emp based photodetector. The low detectivity of graph operation remains big challenges in further appli ode operation in graphene p-n junctions fabricated od that induces n-type doping in the intrinsic p-ty 0 Jones. dichalcogenides and black phosphorene with strong new opportunities for 2D materials for optoelectr nide (SnSe 2 ) was synthesized and exfoliated into sing ect transistors displayed a high responsivity (0.5 A Few layer black phosphorene p-n junction formed b sing material for IR photodetector and filled the gap b n graphene nanoribbon (a), graphene p-n junctio ene (d). 2D materials neering , Nanyang Nanyang Link, n thanks to their dern optoelectronic te for ultrafast and esponsivity. In our ployed to enhance hene photodetector ications. Here, we d by a simple but ype graphene and in-plane and weak ronic applications. gle and few layers. A/W) and response by chemical doping between graphene on, bilayer SnSes
Transcript
High performance photodetectors based on graphene and other 2D materials
1. OPTIMUS, Photonics Centre of Excellence, School of Electrical and Electronic EngineeringTechnological University, 50 Nanyang Avenue, 639798, Singapore
2. Centre for Disruptive Photonic Technologies, Nanyang Technological University, 21 Nanyang Link, 63737, Singapore
Abstract
Graphene and other 2D materials have attracted tremendous attention thanks to their extraordinary electronic and optical properties, accommodating a large potential in modern optoelectronic applications such as photodetection. Graphene is considered as a broadband photodetector, however, suffering group, nanostructured graphene (graphene quantum dots and nanoribbons) were employed to enhance the photoresponsivity of graphene based photodetector. based on photoconductive mode operation remains big challenges in further applications. Here, we demonstrated the photovoltaic mode operation in graphene peffective electron irradiation method exhibit a high detectivity of ~ 3×10
10
On the other hand, metal dichalcogenides and black phosphorene with strong inout-of-plane interactions open up new opportunities for 2D materials for optoelectronic applications. Single crystal 1T phase Tin Diselenide (SnSeAtomically layered SnSe2 field-effect transistors displayed a high responsivity (0.5 A/W) and response time (~2 ms) in the visible range. Few layer black phosphorene pwas also demonstrated as a promising material and metal dichalcogenides.
Figure 1. Photodetector based on graphene nanoribbon (a), graphene p(c) and few layer black phosphorene (d).
High performance photodetectors based on graphene and other 2D materials
Xuechao Yu1, Qi Jie Wang
1,2,
Excellence, School of Electrical and Electronic EngineeringTechnological University, 50 Nanyang Avenue, 639798, Singapore
Centre for Disruptive Photonic Technologies, Nanyang Technological University, 21 Nanyang Link,
Graphene and other 2D materials have attracted tremendous attention thanks to their extraordinary electronic and optical properties, accommodating a large potential in modern optoelectronic applications such as photodetection. Graphene is considered as a suitable candidate for ultrafast and broadband photodetector, however, suffering from low light absorption and photoresponsivity. group, nanostructured graphene (graphene quantum dots and nanoribbons) were employed to enhance
f graphene based photodetector. The low detectivity of graphene photodetector based on photoconductive mode operation remains big challenges in further applications. Here, we demonstrated the photovoltaic mode operation in graphene p-n junctions fabricated by
method that induces n-type doping in the intrinsic p-type graphene10
Jones.
On the other hand, metal dichalcogenides and black phosphorene with strong inplane interactions open up new opportunities for 2D materials for optoelectronic applications.
Single crystal 1T phase Tin Diselenide (SnSe2) was synthesized and exfoliated into single and few layers. ect transistors displayed a high responsivity (0.5 A/W) and response
time (~2 ms) in the visible range. Few layer black phosphorene p-n junction formed by chemical doping was also demonstrated as a promising material for IR photodetector and filled the gap between graphene
hotodetector based on graphene nanoribbon (a), graphene p-n junction, bilayer SnSes (c) and few layer black phosphorene (d).
High performance photodetectors based on graphene and other 2D materials
Excellence, School of Electrical and Electronic Engineering , Nanyang
Centre for Disruptive Photonic Technologies, Nanyang Technological University, 21 Nanyang Link,
Graphene and other 2D materials have attracted tremendous attention thanks to their extraordinary electronic and optical properties, accommodating a large potential in modern optoelectronic
suitable candidate for ultrafast and low light absorption and photoresponsivity. In our
group, nanostructured graphene (graphene quantum dots and nanoribbons) were employed to enhance The low detectivity of graphene photodetector
based on photoconductive mode operation remains big challenges in further applications. Here, we fabricated by a simple but
type graphene and
On the other hand, metal dichalcogenides and black phosphorene with strong in-plane and weak plane interactions open up new opportunities for 2D materials for optoelectronic applications.
) was synthesized and exfoliated into single and few layers. ect transistors displayed a high responsivity (0.5 A/W) and response
n junction formed by chemical doping between graphene
