Nano Res.

Electronic Supplementary Material

High-performance UV–vis photodetectors based onelectrospun ZnO nanofiber-solution processed perovskitehybrid structures

Fengren Cao§, Wei Tian§, Bangkai Gu, Yulong Ma, Hao Lu, and Liang Li ()

College of Physics, Optoelectronics and Energy, Collaborative Innovation Center of Suzhou Nano Science and Technology, JiangsuKey Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou 215006, China§ These authors contributed equally to this work.

Supporting information to DOI 10.1007/s12274-016-1413-2

Figure S1 SEM images of as-fabricated samples: (a) 5NF, (b) 15NF, (c) 25NF, and (d) 35NF.

Address correspondence to lli@suda.edu.cn, liang.li0216@gmail.com

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Figure S2 SEM images of as-fabricated samples: (a) 5NFA, (b) 10NFA, (c) 15NFA, and (d) 20NFA.

Figure S3 SEM images of pristine perovskite: (a) top-view, (b) cross-sectional view.

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Figure S4 SEM images of as-fabricated samples: (a) 5NF/perovskite, (b) 15NF/perovskite, (c) 25NF/perovskite, and (d) 35NF/perovskite.

Figure S5 SEM images of as fabricated samples: (a) 5NFA/perovskite, (b) 10NFA/perovskite, (c) 15NFA/perovskite, and (d) 20NFA/ perovskite.

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Figure S6 XRD pattern of as-fabricated samples: (a) ZnO/perovskite, (b) ZnO, and (c) pure perovskite.

Figure S7 I–V curves of the pure perovskite photodetector under white light.

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Table S1 Comparison of the characteristic parameters for perovskite based photodetectors from previous reports and the present work

Photodetectors Light (nm)

Bias (V)

Photo- current

On–off ratioResponsivity

(mA·W−1) Detectivity

(Jones) Response time Ref.

CH3NH3PbI3/ MoS2/APTES

520 −30

(gate) — — 9.16 × 107 1.29 × 1012

6.17/4.5 s (gate = 0 V)

[S1]

CH3NH3PbI3−XClX

film White light

(194.2 mW·cm−2) 2

3.8 × 102 nA

2.24 × 103 >1.2 × 103 — 0.2/0.7 µs

(337 nm, 110 µW·cm−2)

[S2]

CH3NH3PbI3 film 500 — — — 3.39 × 102 4.8 × 1012 — [S3]

Three-layered perovskite film

White light (3 mW·cm−2)

30 — — 12.8 — 10/7.5 ms [S4]

Single-crystalline HC(NH2)2PbI3

635 8 — — 0.13–1.3 — 8.3/7.5 ms [S5]

CH3NH3PbCl3 single crystals

365 (1 W·cm−2)

15 0.47 mA 1.1 × 103 46.9 1.2 × 1010 24/62 ms [S6]

CH3NH3PbCl3 single crystals

385 (4 nW) 5 — — 1.8 × 104 1012 1 ms [S7]

CH3NH3PbI3 nanowire array

White light (4.6 mW·cm−2)

0.3 — — ~30

(450–780 nm)~1010

(450–780 nm) 20.47/

13.81 ms [S8]

CH3NH3PbI3 microwire arrays

420 −5 — — 1.36 × 104 5.25 × 1012 80/240 µs [S9]

CsPbBr3 nanocrystals

405 (1.38 mW·cm−2)

3 — 105 — — 24/29 ms

(405 nm, 1.98 mW·cm−2)

[S10]

CsPbBr3 nanocrystal film

442 (1.01 mW·cm−2)

9 7.5 µA 8 × 103 1.76 × 102

(531 nm) 6.1 × 1010

1/1.8 ms (3 V)

[S11]

CsPbBr3 nanocrystals

520 2 831.1 µA 1.7 × 106 10.04 4.56 × 108 — [S12]

CH3NH3PbI3 Network

650 (100 µW·cm−2)

10 — 3.4 × 102 102 1.02 × 1012 0.3/0.4 ms [S13]

Inverted CH3NH3PbI3−XClX

550 (1 m W·cm−2)

−0.1 — — 8 × 1013 — [S14]

Layered inverted CH3NH3PbI3

740 −1 — — 2.42 × 105 — 10 ± 0.8 μs (532 nm)

[S15]

CH3NH3PbI3/ graphene

520 (1 µW) 0.1 — — 1.8 × 105 109 87/540 ms [S16]

CH3NH3PbI3/ WS2 bilayers

White light (0.5 mW·cm–2)

5 — — — 2 × 1012

(505 nm) 2.7/7.5 ms [S17]

CH3NH3PbI3/ rGO

532 (3.2 mW·cm−2)

5 28.6 nA 23.5 73.9 — 40.9/28.8 ms [S18]

CH3NH3PbI3/ WSe2

— 2 — — 1.1 × 105 2.2 × 1011 — [S19]

CH3NH3PbI3 film White light

(100 mW·cm−2) 1 — — 20–160 — 2.2/0.3 s [S20]

CH3NH3PbI3/ PDPP3T

835 (5 µW·cm−2)

1 — — 1.54 × 102 8.8 × 1010 — [S21]

CH3NH3PbI3/ ZnO nanofiber

White light (100 mW·cm−2)

1 — 2.8 × 103 6.7 × 102

(740 nm) 1013

(740 nm) 0.2/0.5 s

This work

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