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PHAROS is a femtosecond laser system combining millijoule pulse energies and high average powers. PHAROS features a mechanical and optical design optimized for industrial applications such as precise material processing. Compact size, an integrated thermal stabilization system, and sealed design allow PHAROS integration into machining workstations.
Laser diodes pumping Yb medium significantly reduces maintenance costs and provides a long laser lifetime. Software tunability of PHAROS allows the system to cover applications
normally requiring different classes of laser. Tunable parameters include pulse duration (190 fs – 20 ps), repetition rate (single pulse to 1 MHz), pulse energy (up to 2 mJ) and average power (up to 20 W). Its power level is sufficient for most material processing applications at high machining speeds. The built-in pulse picker allows convenient control of the laser output in pulse-on-demand mode. PHAROS compact and robust optomechanical design features stable laser operation across varying environments.
FEATURES ᰋ 190 fs – 20 ps tunable pulse duration ᰋ 2 mJ maximum pulse energy ᰋ 20 W output power ᰋ 1 kHz – 1 MHz tunable base repetition rate ᰋ Pulse picker for pulse-on-demand operation ᰋ Rugged industrial grade mechanical design ᰋ Automated harmonics generators
(515 nm, 343 nm, 257 nm, 206 nm)
ᰋ Optional CEP stabilization ᰋ Possibility to lock oscillator to external clock
High Power and Energy Femtosecond Lasers
Typical spectrum of PHAROS
Typical pulse duration of PHAROSPulse energy vs base repetition rate for PHAROS
1.0
0.6
0.8
0.4
Re
lati
ve s
pe
ctra
l in
ten
sity
, a.u
.
0.2
1010 1015 1020 1025 1030 1035 10400.0
Wavelength, nm
SpectralFWHM = 8.2 nm
1.0
0.8
0.6
Delay, fs
0.4
-1000-1500 -500 0 500 1000 1500
0.2
0.0
Gaussian fit223 fs
Inte
nsi
ty, a
.u.
Pu
lse
en
erg
y, µ
J
Repetition rate, kHz
1000
100
10
101 100 1000
PHAROS PH1-SP-1mJ / 6 W, 1 mJ
PHAROS PH2-SP-20W-2mJ / 20 W, 2 mJ
PHAROS PH1-10W / 10 W, 200 µJ
PHAROS PH1-20W / 20 W, 400 µJ
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SSPECIFICATIONSModel ¹⁾ PH1-10W PH1-15W PH1-20W PH1-SP-1mJ PH2-SP-20W-2mJ
OUTPUT CHARACTERISTICMax. average power 10 W 15 W 20 W 6 W 20 W
Pulse duration (assuming Gaussian pulse shape) < 290 fs < 190 fs
Pulse duration range 290 fs – 10 ps (20 ps on request) 190 fs – 10 ps (20 ps on request)
Max. pulse energy > 0.2 mJ or > 0.4 mJ > 1 mJ > 2 mJ
Beam quality TEM₀₀ ; M² < 1.2 TEM₀₀ ; M² < 1.3
Base repetition rate ²⁾ 1 kHz – 1 MHz
Pulse selection Single-Shot, Pulse-on-Demand, any base repetition rate division
Centre wavelength 1028 nm ± 5 nm 1033 nm ± 5 nm
Output pulse-to-pulse stability ³⁾ < 0.5 % rms over 24 hours
Power stability < 0.5 % rms over 100 h
Pre-pulse contrast < 1 : 1000
Post-pulse contrast < 1 : 200
Polarization Linear, horizontal
Beam pointing stability < 20 μrad/°C
OPTIONAL EXTENSIONSOscillator output Optional. Please contact [email protected] for more details or customized solutions
Typical output 1 – 6 W, 50 – 250 fs, ~1035 nm, ~ 76 MHz, simultaneously available
Harmonics generator Integrated, optional (see page 8)
Output wavelength 515 nm, 343 nm, 257 nm, 206 nm
Optical parametric amplifier Integrated, optional (see page 15)
Tuning range 640 – 4500 nm
BiBurst mode Tunable GHz and MHz burst with burst-in-burst capability, optional (see page 9)
GHz-mode (P)
Intra burst pulse separation ⁴⁾ ~ 200 ± 40 ps ~ 500 ± 40 ps
Max no. of pulses ⁵) 1 . . 25 1 . . 10
MHz-mode (N)
Intra burst pulse separation ~ 16 ns
Max no. of pulses 1 . . 9, (7 with FEC)
PHYSICAL DIMENSIONSLaser head ⁶⁾ 670 (L) × 360 (W) × 212 (H) mm 730 (L) × 419 (W) × 233 (H) mm
Rack for power supply & chiller 642 (L) × 553 (W) × 673 (H) mm PS integrated in the laser head
UTILITY REQUIREMENTSElectric 110 V AC, 50 – 60 Hz, 20 A or 220 V AC, 50 – 60 Hz, 10 A
Operating temperature 15 – 30 °C (air conditioning recommended)
Relative humidity < 80 % (non condensing)
DANGER: VISIBLE AND/OR INVISIBLE LASER RADIATION AVOID EYE OR SKIN EXPOSURE TO DIRECT, REFLECTED OR SCATTERED RADIATION
CLASS 4 LASER PRODUCT
¹⁾ More models are available on request.²⁾ Some particular repetition rates are software denied due to system design.³⁾ Under stable environmental conditions.⁴⁾ Custom spacing on request.⁵⁾ Maximum number of pulses in a burst is dependent on the laser repetition rate. Custom number of pulses on request.⁶⁾ Dimensions might increase for non-standard laser specifications.
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Am
bien
t tem
pera
ture
, °C
Out
put p
ower
, W
Ambient temperatureOutput power, RMS=0.12%
Time, h
0 55 5.92
10 5.94
15 5.96
20 5.98
25 6.00
30 6.02
35 6.04
40 6.05
10 15 20 25 30
Beam
dire
ctio
n, µ
rad
Tem
pera
ture
, °C
Time, h0 5
0 14
12
10
8
20
-20
-40
-60
16
40 18
60 20
80 22
100 24
120 26
140 28
10 15 20 25
Temperature
HorizontalVertical
PHAROS output power with power lock enabled under unstable environment
Ou
tpu
t p
ow
er,
W
Time, h
20.06
20.08
20.10
20.12
20.14
20.16
20.18
1000 200 300 400 500 600
RMS < 0.03%
Long term stability graph of PHAROS
Ou
tpu
t p
ow
er,
WP
um
p c
ur r
en
t, A
40
38
36
34
32
Year 2009 2010 2011 2012 2013 2014 2015 2016 2017 2018 2019
8
7
6
5
4Ou
tpu
t p
ow
er,
WP
um
p c
urr
en
t, A
38
36
34
32
30
Year 2009 2010 2011 2012 2013 2014 2015 2016 2017 2018
8
7
6
5
4
Output power of industrial PHAROS lasers operating 24/7 and current of pump diodes during the years
1000
800
Wai
st d
iam
eter
, µm
Z location, mm
600
400
200
350 400 450 500 550 600 650
Typical M² measurement data of PHAROS
Typical near-field beam profile of PHAROS at 200 kHz
Typical far-field beam profile of PHAROS at 200 kHz
STABILITY MEASUREMENTS
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Short term pulse-to-pulse energy stability of PHAROS lasers. 1.2×10⁷ pulses (1 min at 200 kHz),
STD < 0.11%, peak-to-peak < 1%
Nu
mb
er
of
pu
lse
s4×105
3×105
2×105
1×105
0
Normalized pulse energy, a.u.
0.996 0.998 1.000 1.002 1.004
PHAROS PH1 laser outline drawing
0 2140
160
180
200
220
240
260
280
300
320
4 6 8 10Time, h
Phas
e st
d (la
st 1
k sa
mpl
es),
mra
d
12 14 16
Std of all samples = 206 mrad
PHAROS CEP stability when laser is isolated from all noticeable noise sources – vibrations, acoustics, air circulation and electrical noise. System can achieve < 300 mrad std of CEP stability over a long time scale (> 8 hours) and < 200 mrad over a short time scale (< 5 min)
CEP stability over a short time scale
Carrier-envelope phase (CEP) over the long period with active phase stabilization system
CEP stability over a long time scale
0 20
150
160
170
180
190
200
210
40 60 80 100
Time, s
Phas
e st
d (la
st 1
k sa
mpl
es),
mra
d
120 140 160
Std of all samples = 181 mrad
0 2
-0.50
-0.75
-1.00
-0.25
0.00
0.25
0.50
0.75
1.00
4 6 8 10
Time, h
Car
rier
Env
elop
e Ph
ase,
rad
12 14
σ = 206 mrad
70
670
360
212
5420 30 168
(74)(104)
(272)
1030 nm output
without H
1030 nm output
with Auto H
Auto 2H Auto 3H, 4H515 nm 343, 257 nm
OUTLINE DRAWINGS
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PHAROS laser can be equipped with automated harmonics modules. A selection of fundamental (1030 nm), second (515 nm), third (343 nm), fourth (257 nm) or fifth (206 nm) harmonic outputs are available through software control.
3H output stability
4H output stabilityPHAROS harmonics energy vs pulse repetition rate
SPECIFICATIONSModel 2H 2H-3H 2H-4H 4H-5H
Output wavelength 1) (automated selection)
1030 nm 515 nm
1030 nm 515 nm 343 nm
1030 nm 515 nm 257 nm
1030 nm 257 nm 206 nm
Input pulse energy 20 – 2000 μJ 50 – 2000 μJ 2) 20 – 2000 μJ 2) 200 – 1000 μJ
Pump pulse duration 190 – 300 fs
Conversion efficiency > 50 % (2H) > 50 % (2H) > 25 % (3H) > 50 % (2H)
> 10 % (4H) 3)> 10 % (4H) 3) > 5 % (5H) 4)
Beam quality (M²) ≤ 400 μJ pump
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Tunable GHz and MHz burst with burst-in-burst capability
PHAROS and CARBIDE 40W (CB3) have an option for tunable GHz and MHz burst with burst-in-burst capability – called BiBurst. The distance between burst packet groups is called nanosecond burst, N (MHz-Burst). The distance between sub-pulses in the group is called picosecond burst, P (GHz-Burst).
In single pulse mode, one pulse is emitted at a time at some fixed frequency. In burst mode, the output consists of several picosecond burst packets each separated by an equal time period between each packet. Each packet can contain a number of sub-pulses which are also separated by an equal time period between each pulse.
High pulse energy femtosecond laser with flexible BiBurst functionality brings new production capabilities to high-tech manufacturing industries such as consumer electronics, integrated photonic chip manufacturing, stent cutting, surface functionalization, future displays manufacturing and quantum computing.
BiBurst material fabrication areas cover:
ᰋ brittle material drilling and cutting ᰋ deep engraving ᰋ selective ablation ᰋ transparent materials volume modification ᰋ hidden marking ᰋ surface functional structuring.
SPECIFICATIONSModel CARBIDE-CB3 (40 W) PHAROS PHAROS-SP
P, GHz-modeIntra burst pulse separation ¹⁾ ~ 440 ± 40 ps ~ 200 ± 40 ps ~ 500 ± 40 ps
Max no. of pulses ²⁾ 1 . . 10 1 . . 25 1 . . 10
N, MHz-modeIntra burst pulse separation ~16 ns
Max no. of pulses 1 . . 10 1 . . 9, (7 with FEC) 1 . . 9, (7 with FEC)
¹⁾ Custom spacing on request.²⁾ Maximum number of pulses in a burst is dependent on the laser repetition rate. Custom number of pulses on request.
BiBurst
1 kHz – 1 MHz carrier frequency260 fs – 10 ps tunable pulse duration
BiBurst
GHz-Burst
MHz-Burst
Adjustable number of pulses in GHz and MHz burst
Adjustable intra-burst amplitude slope
ns
psfs