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© 2019 Toshiba Discrete Semiconductor Technology Corporation R640-851-10-18B-054 Jan, 2019 Power Management Application Engineering GroupPower Management Application Engineering Dept. Discrete Semiconductor Application Engineering Center Discrete Semiconductor Div. Toshiba Electronic Devices & Storage Corporation High Voltage Intelligent Power Device
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Page 1: High Voltage Intelligent Power Deviceimage.big-bit.com/Meeting/2019dd3/live/data/gcl.pdf · for specific applications as expressly stated in this document, Unintended Use includes,

© 2019 Toshiba Discrete Semiconductor Technology CorporationR640-851-10-18B-054

Jan, 2019Power Management Application Engineering GroupⅠPower Management Application Engineering Dept.

Discrete Semiconductor Application Engineering CenterDiscrete Semiconductor Div.

Toshiba Electronic Devices & Storage Corporation

High Voltage Intelligent Power Device

Page 2: High Voltage Intelligent Power Deviceimage.big-bit.com/Meeting/2019dd3/live/data/gcl.pdf · for specific applications as expressly stated in this document, Unintended Use includes,

© 2019 Toshiba Discrete Semiconductor Technology CorporationR640-851-10-18B-0541

High Voltage Intelligent Power Device

Square-wave control type

Sine-wave control type

01

02

Page 3: High Voltage Intelligent Power Deviceimage.big-bit.com/Meeting/2019dd3/live/data/gcl.pdf · for specific applications as expressly stated in this document, Unintended Use includes,

© 2019 Toshiba Discrete Semiconductor Technology CorporationR640-851-10-18B-0542

Application Field of HVIPDHVIPD are applied in many small BLDC motor applications as

Inverter type Air-conditioner, Dish washer, Washing M/C and others.

High Voltage Intelligent Power Device IC with a function of driving

the brushless DC motor directly

Washing-machine

Air-Conditioner

Refrigerator

Water heater

Air Cleaner

Massage chair

Dish-Washer

VentilatorFan

brushless DC motor

Rect

ifier

Intelligent Power Devices

Microcontroller

DriverControlProtection

Position detection signal

>Maximum ratingVoltage:600V/500V/250VCurrent:0.7A~3A

Page 4: High Voltage Intelligent Power Deviceimage.big-bit.com/Meeting/2019dd3/live/data/gcl.pdf · for specific applications as expressly stated in this document, Unintended Use includes,

© 2019 Toshiba Discrete Semiconductor Technology CorporationR640-851-10-18B-0543

Line up of HV-IPD for Small Motor Drive

type Product name Rating

Function

PackageHallSensorinput

Forward/Reverse selection

pin<FR>

Rotation pulse selection pin

<FGC>

Over current

Over temp

Under voltage

Squarewavetype

(120°)

TPD4151K/F 250V/1A ✔ ✔ - ✔ ✔ ✔DIP26/

HSSOP31

TPD4142K500V/1A

✔ ✔ - ✔ ✔ ✔DIP26

TPD4146K ✔ - ✔ ✔ ✔ ✔

TPD4152FTPD4162F* 600V/(0.7)A ✔ ✔ - ✔ ✔ ✔ HSSOP31

SineWavetype

(180°)

TPD4123K500V/1A

- - - ✔ ✔ ✔

DIP26

TPD4123AK - - - - ✔ ✔

TPD4144K500V/2A

- - - ✔ ✔ ✔

TPD4144AK - - - - ✔ ✔

TPD4135K500V/3A

- - - ✔ ✔ ✔

TPD4135AK - - - - ✔ ✔

TPD4164F* 600V/(2)A - - - ✔ ✔ ✔ HSSOP31

TPD4204F 600V/2.5A - - - ✔ ✔ ✔

TPD4206F 500V/2.5A - - - ✔ ✔ ✔ SSOP30

TPD4207F 600V/5.0A - - - ✔ ✔ ✔

* : Underdevelopment

New

New

New

Planning

Page 5: High Voltage Intelligent Power Deviceimage.big-bit.com/Meeting/2019dd3/live/data/gcl.pdf · for specific applications as expressly stated in this document, Unintended Use includes,

© 2019 Toshiba Discrete Semiconductor Technology CorporationR640-851-10-18B-0544

© 2019 Toshiba Discrete Semiconductor Technology Corporation

01High Voltage Intelligent Power Device

Square-wave control type

Page 6: High Voltage Intelligent Power Deviceimage.big-bit.com/Meeting/2019dd3/live/data/gcl.pdf · for specific applications as expressly stated in this document, Unintended Use includes,

© 2019 Toshiba Discrete Semiconductor Technology CorporationR640-851-10-18B-0545

HVIPD New Products

【1】Square Wave type

P/N Rating Protect function PackageTPD4162F* 600V/(0.7A) Thermal Shutdown/Over Current/Under Voltage HSSOP31TPD4152F 600V/0.7A Thermal Shutdown/Over Current/Under Voltage HSSOP31TPD4151F 250V/1.0A Thermal Shutdown/Over Current/Under Voltage HSSOP31

1 chip solution <IGBT type> HSSOP3117.5×8×2mm

Underdevelopment

【2】Sine Wave type

P/N Rating Protect function PackageTPD4204F 600V/2.5A Thermal Shutdown/Over Current/Under Voltage SSOP30TPD4206F 500V/2.5A Thermal Shutdown/Over Current/Under Voltage SSOP30TPD4207F 600V/5.0A Thermal Shutdown/Over Current/Under Voltage SSOP30

Multichip solution <MOS-FET(6pcs)+Dr IC> SSOP3020×11×2mm

P/N Rating Protect function PackageTPD4164F 600V/2A Thermal Shutdown/Over Current/Under Voltage HSSOP31

1 chip solution <IGBT type>Planning

Page 7: High Voltage Intelligent Power Deviceimage.big-bit.com/Meeting/2019dd3/live/data/gcl.pdf · for specific applications as expressly stated in this document, Unintended Use includes,

© 2019 Toshiba Discrete Semiconductor Technology CorporationR640-851-10-18B-0546

Product summary of TPD4162F(Under development)□ High voltage rating for Global design model : 600V type□ Small SMD Package : HSSOP31 package

■P/N : TPD4162F(Package:HSSOP31)■Ratings : 600V/(0.7)A■Protective functions

Current limit and over-current and under voltage and thermal shutdown

■Applications: Fan motor(Air-Conditioner, Air cleaner, Pump, etc.)

■SMD Package

2.0mm17.5mm

8.4m

m

■Performance

<Package Dimensions >

Condition:VBB=280V, VCC=15V, VSP=4V, fs=20kHz, Ta=25℃, No-fan/Heat sink less

Air-ConditionerAir Cleaner

TPD4152F

TPD4162F

TPD4162F’s power loss is 0.5W lower than TPD4152F.

(at Pin=40W)

■ScheduleTS CS MPOK OK ‘19/04 ※refer to the following page about the difference between TPD4152F and TPD4162F

New

Page 8: High Voltage Intelligent Power Deviceimage.big-bit.com/Meeting/2019dd3/live/data/gcl.pdf · for specific applications as expressly stated in this document, Unintended Use includes,

© 2019 Toshiba Discrete Semiconductor Technology CorporationR640-851-10-18B-0547

The new function of TPD4162F【Protect Function】 P/N Current limit Over current Under-voltage Thermal shutdown

TPD4152F ✔ ー ✔ ✔TPD4162F ✔ ✔ ✔ ✔

Rs voltage Off mode RestartCurrent limit Rs=0.5V

(ex:R1=1Ω、IO=0.5A)Only high side

IGBTThe next PWM

ON signal

Over current RS=0.7V(ex:R1=1Ω、IO=0.7A)

All low and high side IGBT

After recovery time 1ms, next PWM ON

signal

The following formula shows the detection current: IO = RS ÷ R1 (at RS = 0.5 V (typ.))

【TPD4162F】New protection

ch1:IBB:0.2A/div、ch2:U-GND:200V/div、ch3:V-GND:200V/div、ch4:W-GND:200V/div

<Current limit>

Current limit

<Over current>

t:10μs/div

t:400μs/div

Only high sideturn-off

Over CurrentCurrent limitdetection

Current limitdetection

Recovery time≒1msOver Current

Detection

All IGBTsturn-off

Only high sideturn-off(C4=470pF , R2=2MΩ)

(0.7V)

Page 9: High Voltage Intelligent Power Deviceimage.big-bit.com/Meeting/2019dd3/live/data/gcl.pdf · for specific applications as expressly stated in this document, Unintended Use includes,

© 2019 Toshiba Discrete Semiconductor Technology CorporationR640-851-10-18B-0548

Evaluation Board for TPD4162F●Picture of Evaluation board ●Circuit of evaluation board

●Part table

Pattern Layout on Top side Pattern Layout on Back side

We can provide this evaluation board for your evaluation.

Page 10: High Voltage Intelligent Power Deviceimage.big-bit.com/Meeting/2019dd3/live/data/gcl.pdf · for specific applications as expressly stated in this document, Unintended Use includes,

© 2019 Toshiba Discrete Semiconductor Technology CorporationR640-851-10-18B-0549

Evaluation Board for TPD4162F

[Hall IC type][Hall Element type]

Page 11: High Voltage Intelligent Power Deviceimage.big-bit.com/Meeting/2019dd3/live/data/gcl.pdf · for specific applications as expressly stated in this document, Unintended Use includes,

© 2019 Toshiba Discrete Semiconductor Technology CorporationR640-851-10-18B-05410

© 2019 Toshiba Discrete Semiconductor Technology Corporation

02High Voltage Intelligent Power Device

Sine-wave control type

Page 12: High Voltage Intelligent Power Deviceimage.big-bit.com/Meeting/2019dd3/live/data/gcl.pdf · for specific applications as expressly stated in this document, Unintended Use includes,

© 2019 Toshiba Discrete Semiconductor Technology CorporationR640-851-10-18B-05411

Line up of HVIPD for sine wave typeToshiba shift to SMD type

type Product name Rating

Function

PackageHallSensorinput

Forward/Reverse selection

pin<FR>

Rotation pulse selection pin

<FGC>

Over current

Over temp

Under voltage

SineWavetype

(180°)

TPD4123K500V/1A

- - - ✔ ✔ ✔

DIP26

TPD4123AK - - - - ✔ ✔

TPD4144K500V/2A

- - - ✔ ✔ ✔

TPD4144AK - - - - ✔ ✔

TPD4135K500V/3A

- - - ✔ ✔ ✔

TPD4135AK - - - - ✔ ✔

*TPD4164F 600V/2A - - - ✔ ✔ ✔ HSSOP31TPD4204F 600V/2.5A - - - ✔ ✔ ✔

TPD4206F 500V/2.5A - - - ✔ ✔ ✔ SSOP30TPD4207F 600V/5.0A - - - ✔ ✔ ✔

New

New

New

Small:53%Thin:56%

DIP26 : 32mm×13mm×3.6mm SSOP30 : 20mm×11mm×2mm

Planning

HSSOP31 : 17.5mm×8.4mm×2mm

Page 13: High Voltage Intelligent Power Deviceimage.big-bit.com/Meeting/2019dd3/live/data/gcl.pdf · for specific applications as expressly stated in this document, Unintended Use includes,

© 2019 Toshiba Discrete Semiconductor Technology CorporationR640-851-10-18B-05412

Sine-wave type with MOSFETs module ■ MOSFET achieve lower power loss than single chip solution with IGBT ⇒ MOSFET multi module■ SMD package for compact design and auto-mounting process ⇒ SSOP30 pin package

ProductConventional product New product

TPD4123/44K (AK) TPD4204F

Chip structure 1chip (IGBT+FRD+Driver IC in 1chip)

Multichip(π-MOSⅦ HSD 6pcs and Driver IC 1pc)

Package

DIP26:32mm×13mm×3.6mm SSOP30:20mm×11mm×2mm

RatingCurrent(DC) 1A/2A 2.5A

Absolutemaximum voltage 500V(450V operation) 600V(450V operation)

Function

ProtectionMain circuit

Over current ( K type)Shut down function (AK type) Over current and Shut down function

VBS under voltage protection

Under voltage level:9V(typ.)Reverse voltage level:9.5V(typ.)

Under voltage level:10V(typ.)Reverse voltage level:10.5V(typ.)

Higher voltage

Small:53%Thin:56%

Higher current

Page 14: High Voltage Intelligent Power Deviceimage.big-bit.com/Meeting/2019dd3/live/data/gcl.pdf · for specific applications as expressly stated in this document, Unintended Use includes,

© 2019 Toshiba Discrete Semiconductor Technology CorporationR640-851-10-18B-05413

Loss comparison among TPD4204F & conventional partsTPD4204F reduces 1W from TPD4144K (@Pin=40W)

Condition at VBB=280V, VCC=15V, VSP=3V, fs=16.5kHz, Controller IC:TB6551FNG,Ta=25℃, No-fan/Heat sink less

Power loss - Input power

Peak0.3A

Peak0.1A

Peak0.5A

Peak0.75A

TPD4123K

TPD4204F

TPD4144K

1W reduction

Page 15: High Voltage Intelligent Power Deviceimage.big-bit.com/Meeting/2019dd3/live/data/gcl.pdf · for specific applications as expressly stated in this document, Unintended Use includes,

© 2019 Toshiba Discrete Semiconductor Technology CorporationR640-851-10-18B-05414

Temperature rise comparison among SSOP30 and DIP26The temp rise between DIP26 with fin and SSOP30 are same range.

Condition at VBB=340V, VCC=15V, VSP=3V, fs=20kHz, Controller IC:TB6551FNG,Ta=25℃

Case temperature - Input power Photo of heatsink

with fin

no finHeatsink size21 mm x 43 mm x 15mm x 2mmt

Temp measurement point

20

11

32

13

Ref : package size comparison

SSOP30 DIP26

no finno fin

Page 16: High Voltage Intelligent Power Deviceimage.big-bit.com/Meeting/2019dd3/live/data/gcl.pdf · for specific applications as expressly stated in this document, Unintended Use includes,

© 2019 Toshiba Discrete Semiconductor Technology CorporationR640-851-10-18B-05415

HVIPD New Products

【2】Sine Wave type

P/N Rating Protect function PackageTPD4204F 600V/2.5A Thermal Shutdown/Over Current/Under Voltage SSOP30TPD4206F 500V/2.5A Thermal Shutdown/Over Current/Under Voltage SSOP30TPD4207F 600V/5.0A Thermal Shutdown/Over Current/Under Voltage SSOP30

Multichip solution <MOS-FET(6pcs)+Dr IC>SSOP3020×11×2mm

HSSOP3117.5×8×2mm

【1】Square Wave type

P/N Rating Protect function PackageTPD4162F 600V/(0.7A) Thermal Shutdown/Over Current/Under Voltage HSSOP31TPD4152F 600V/0.7A Thermal Shutdown/Over Current/Under Voltage HSSOP31TPD4151F 250V/1.0A Thermal Shutdown/Over Current/Under Voltage HSSOP31

1 chip solution <IGBT type>

Underdevelopment

P/N Rating Protect function PackageTPD4164F* 600V/2A Thermal Shutdown/Over Current/Under Voltage HSSOP31

1 chip solution <IGBT type>

Planning

Page 17: High Voltage Intelligent Power Deviceimage.big-bit.com/Meeting/2019dd3/live/data/gcl.pdf · for specific applications as expressly stated in this document, Unintended Use includes,

© 2019 Toshiba Discrete Semiconductor Technology CorporationR640-851-10-18B-05416

Product summary of TPD4204F(600V/2.5A) Ratings:600V/2.5A Operating voltage:450V Max RDS(ON) :2.6Ω typ.

PKG:SSOP30・Control pins and high-voltage

pins are separated

Protective functions・Over current・Thermal shutdown・Shutdown(SD) function・Under voltage

TPD4204FControl IC p-MOSⅦ(HSD)(TK4A60DA5)

New

Page 18: High Voltage Intelligent Power Deviceimage.big-bit.com/Meeting/2019dd3/live/data/gcl.pdf · for specific applications as expressly stated in this document, Unintended Use includes,

© 2019 Toshiba Discrete Semiconductor Technology CorporationR640-851-10-18B-05417

Product summary of TPD4207F(600V/5A)

Ratings:600V/5A Operating voltage:450V Max RDS(ON) :0.44Ω typ.

PKG:SSOP30・Control pins and high-voltage

pins are separated

Protective functions・Over current・Thermal shutdown・Shutdown(SD) function・Under voltage

TPD4207FControl IC DTMOSⅣ(HSD)(TK8P60W5)

New

Page 19: High Voltage Intelligent Power Deviceimage.big-bit.com/Meeting/2019dd3/live/data/gcl.pdf · for specific applications as expressly stated in this document, Unintended Use includes,

© 2019 Toshiba Discrete Semiconductor Technology CorporationR640-851-10-18B-05418

SSOP30 Pin assignment / Package dimensions20mm

11m

m

1mm 2.7mm

2.1mm2mm

NC NC NC DIA

G V CC SD GN D RS LWV REG

LV LU H W HV H U GN D NC NC NC

VBSU

IS2

BSW

W IS3

V BBV BBBSV

IS1

U

1mm 0.3mm

0.88mm

High voltage / High current terminals

Control terminals

1.6mm

0.25mm

Page 20: High Voltage Intelligent Power Deviceimage.big-bit.com/Meeting/2019dd3/live/data/gcl.pdf · for specific applications as expressly stated in this document, Unintended Use includes,

© 2019 Toshiba Discrete Semiconductor Technology CorporationR640-851-10-18B-05419

Evaluation Board for TPD420xF (SSOP30) series●Picture of Evaluation board

100mm

100m

m

●Circuit of evaluation board ●Part table

We can provide this evaluation board for your evaluation.

Page 21: High Voltage Intelligent Power Deviceimage.big-bit.com/Meeting/2019dd3/live/data/gcl.pdf · for specific applications as expressly stated in this document, Unintended Use includes,

© 2019 Toshiba Discrete Semiconductor Technology CorporationR640-851-10-18B-05420

RESTRICTIONS ON PRODUCT USEToshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”.

Hardware, software and systems described in this document are collectively referred to as “Product”.• TOSHIBA reserves the right to make changes to the information in this document and related Product without notice.• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if

reproduction is without alteration/omission.• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for

providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS.

• PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT ("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, lifesaving and/or life supporting medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, and devices related to power plant. IF YOU USE PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT. For details, please contact your TOSHIBA sales representative or contact us via our website.

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rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY

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Page 22: High Voltage Intelligent Power Deviceimage.big-bit.com/Meeting/2019dd3/live/data/gcl.pdf · for specific applications as expressly stated in this document, Unintended Use includes,

© 2019 Toshiba Discrete Semiconductor Technology CorporationR640-851-10-18B-05421

© 2019 Toshiba Discrete Semiconductor Technology Corporation

Thank you


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